JP6566904B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP6566904B2 JP6566904B2 JP2016065250A JP2016065250A JP6566904B2 JP 6566904 B2 JP6566904 B2 JP 6566904B2 JP 2016065250 A JP2016065250 A JP 2016065250A JP 2016065250 A JP2016065250 A JP 2016065250A JP 6566904 B2 JP6566904 B2 JP 6566904B2
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- 239000000758 substrate Substances 0.000 title claims description 74
- 238000005192 partition Methods 0.000 claims description 78
- 239000007789 gas Substances 0.000 claims description 66
- 230000002093 peripheral effect Effects 0.000 claims description 62
- 239000011261 inert gas Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims 1
- 238000000638 solvent extraction Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 58
- 239000002245 particle Substances 0.000 description 15
- 239000012212 insulator Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000010453 quartz Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H01J37/32449—Gas control, e.g. control of the gas flow
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45525—Atomic layer deposition [ALD]
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45591—Fixed means, e.g. wings, baffles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H01J37/32431—Constructional details of the reactor
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Description
該基板保持具を収容可能な処理容器と、
該処理容器内の前記仕切板の外周側面と対向する内周壁面から前記仕切板の外周側面に向かって内側に突出するように延び、突出した先端に形成された内周側面と前記仕切板の外周側面との間に隙間を形成する突出部と、
該突出部の前記内周側面と前記仕切板の外周側面との間に形成された前記隙間に不活性ガスを供給して前記複数の基板が積載される領域よりも圧力が高い環状陽圧部を形成可能なガス供給手段と、を有する。
図1は、本発明の第1の実施形態に係る基板処理装置の一例の全体構成を示した図である。図1を参照すると、基板処理装置は、内部に複数枚の基板(以下、ウエハW)が上下方向に所定の間隔で積層されて収容される処理容器4と、処理容器4の側面及び上面を覆う加熱装置48とを有している。
図3は、本発明の第2の実施形態に係る基板処理装置の一例を示した断面図である。図3に示されるように、本発明の第2の実施形態に係る基板処理装置においては、ガス供給管路90aを、ウエハボート60の内部では無く、インナー管8に設けている。このように、ガス供給管路90は、ウエハボート60ではなく、インナー管8に設けてもよい。
図4は、本発明の第3の実施形態に係る基板処理装置の一例を示した断面図である。図4に示されるように、本発明の第3の実施形態に係る基板処理装置は、ラビリンス構造部を構成する突出構造部83aが上下ともインナー管8の突出部81aの内周側面82aから突出しており、仕切板62aの外周側面63aは平坦面となっている点で、第1の実施形態に係る基板処理装置と異なっている。
図5は、本発明の第4の実施形態に係る基板処理装置の一例を示した断面図である。図5に示されるように、本発明の第4の実施形態に係る基板処理装置は、ラビリンス構造部を構成する突出構造部64bが上下ともウエハボート60bの仕切板62bの外周側面63bから突出しており、インナー管8の突出部81bの内周側面82bは平坦面となっている点で、第1の実施形態に係る基板処理装置と異なっている。
8 インナー管
34 ガスノズル
48 加熱装置
52 ヒータ素線
60 ウエハボート
61 支柱
62、62a、62b 仕切板
63、63a、63b 外周側面
64、64b、83、83a 突出構造部
70 隙間
80 内周壁面
81、81a、81b 突出部
82、82a、82b 内周側面
90、90a ガス供給管路
91、91a 合流管路
92、92a 分岐管路
100 領域
Claims (8)
- 複数の基板を鉛直方向に間隔を有して多段に積載可能であり、前記複数の基板が積載される領域を鉛直方向に仕切る複数の円板形状の仕切板を有する基板保持具と、
該基板保持具を収容可能な処理容器と、
該処理容器内の前記仕切板の外周側面と対向する内周壁面から前記仕切板の外周側面に向かって内側に突出するように延び、突出した先端に形成された内周側面と前記仕切板の外周側面との間に隙間を形成する突出部と、
該突出部の前記内周側面と前記仕切板の外周側面との間に形成された前記隙間に不活性ガスを供給して前記複数の基板が積載される領域よりも圧力が高い環状陽圧部を形成可能なガス供給手段と、を有する基板処理装置。 - 前記ガス供給手段は、前記仕切板及び前記突出部の少なくとも一方の内部を貫通して設けられている請求項1に記載の基板処理装置。
- 前記突出部の前記内周側面及び前記仕切板の外周側面の少なくとも一方にはラビリンス構造が設けられている請求項1又は2に記載の基板処理装置。
- 前記ラビリンス構造は、対向面に向かって突出する複数の突出構造を有し、
該複数の突出構造は、前記突出部の前記内周側面及び前記仕切板の外周側面の少なくとも一方の上面と、前記突出部の前記内周側面及び前記仕切板の外周側面の少なくとも一方の下面に沿って設けられた突出構造を含む請求項3に記載の基板処理装置。 - 前記複数の仕切板及び前記突出部は、前記基板が積載される領域の上端及び下端を囲むように設けられる仕切板及び突出部を含む請求項1乃至4のいずれか一項に記載の基板処理装置。
- 前記処理容器内の鉛直方向に亘って横方向に処理ガスを吐出する処理ガス供給手段を更に有し、
前記処理容器内の前記内周壁面の前記突出部の間の領域には排気口が設けられ、前記仕切板の間の領域でサイドフローの形成が可能に構成された請求項1乃至5のいずれか一項に記載の基板処理装置。 - 前記処理容器は縦長の反応管であり、
前記処理容器内の前記内周壁面は前記反応管内に設けられたインナー管の内周壁面であり、
前記処理容器の周囲には、前記複数の基板を加熱するヒータが設けられた請求項1乃至6のいずれか一項に記載された基板処理装置。 - 前記突出部の前記内周側面と前記仕切板の外周側面との間に形成された前記隙間は、前記ガス供給手段が前記不活性ガスを供給する箇所の上下において間隔が狭い部分が構成され、前記環状陽圧部は前記隙間の間隔が狭い部分に上下から挟まれた領域に形成される請求項1乃至7のいずれか一項に記載の基板処理装置。
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