JP6562819B2 - SiC基板の分離方法 - Google Patents
SiC基板の分離方法 Download PDFInfo
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- JP6562819B2 JP6562819B2 JP2015222369A JP2015222369A JP6562819B2 JP 6562819 B2 JP6562819 B2 JP 6562819B2 JP 2015222369 A JP2015222369 A JP 2015222369A JP 2015222369 A JP2015222369 A JP 2015222369A JP 6562819 B2 JP6562819 B2 JP 6562819B2
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- 239000000758 substrate Substances 0.000 title claims description 107
- 238000000034 method Methods 0.000 title description 14
- 238000000926 separation method Methods 0.000 claims description 50
- 239000002390 adhesive tape Substances 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 41
- 235000012431 wafers Nutrition 0.000 description 18
- 238000003825 pressing Methods 0.000 description 9
- 230000001902 propagating effect Effects 0.000 description 6
- 238000003754 machining Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0823—Devices involving rotation of the workpiece
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
- B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- High Energy & Nuclear Physics (AREA)
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- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
Description
波長 :1064nm
繰り返し周波数 :80kHz
平均出力 :3.2W
パルス幅 :4ns
スポット径 :10μm
集光レンズの開口数(NA) :0.45
インデックス量 :400μm
11 SiCインゴット
13,37 第1のオリエンテーションフラット
15,39 第2のオリエンテーションフラット
19 c軸
21 c面
30 レーザービーム照射ユニット
31 SiC基板
36 集光器(レーザーヘッド)
41 粘着テープ
43 保持部材
45 改質層
47 クラック
49 分離面
66 研削ホイール
72 研削砥石
Claims (1)
- 第1の面と、該第1の面と反対側の第2の面と、該第1の面から該第2の面に至るc軸と、該c軸に直交するc面とを有するSiC基板を少なくとも2枚に分離するSiC基板の分離方法であって、
該第1の面に透明な粘着テープを貼着する粘着テープ貼着ステップと、
該第2の面に保持部材を貼着する保持部材貼着ステップと、
該粘着テープ貼着ステップ及び該保持部材貼着ステップを実施した後、SiC基板及び該粘着テープに対して透過性を有する波長のレーザービームの集光点を該粘着テープ側からSiC基板の内部に位置付けると共に、該集光点とSiC基板とを相対的に移動しながらレーザービームを該粘着テープに照射し、該第1の面に平行な改質層及びクラックとを形成して分離起点とする分離起点形成ステップと、
該分離起点形成ステップを実施した後、外力を付与して該分離起点から該粘着テープと共に該第1の面を有するSiC基板を該第2の面を有するSiC基板から分離する分離ステップと、を備え、
該分離起点形成ステップは、該第1の面の垂線に対して該c軸がオフ角分傾き、該第1の面と該c面との間にオフ角が形成される方向と直交する方向にレーザービームの集光点を相対的に移動して直線状の改質層を形成する改質層形成ステップと、
該オフ角が形成される方向に該集光点を相対的に移動して所定量インデックスするインデックスステップと、を含むことを特徴とするSiC基板の分離方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015222369A JP6562819B2 (ja) | 2015-11-12 | 2015-11-12 | SiC基板の分離方法 |
TW105132904A TWI706454B (zh) | 2015-11-12 | 2016-10-12 | 碳化矽(SiC)基板的分離方法 |
MYPI2016703882A MY180611A (en) | 2015-11-12 | 2016-10-21 | Sic substrate separating method |
SG10201608938WA SG10201608938WA (en) | 2015-11-12 | 2016-10-25 | SiC SUBSTRATE SEPARATING METHOD |
KR1020160141140A KR102475682B1 (ko) | 2015-11-12 | 2016-10-27 | SiC 기판의 분리 방법 |
CN201610930017.6A CN107030392B (zh) | 2015-11-12 | 2016-10-31 | SiC基板的分离方法 |
US15/342,583 US10105792B2 (en) | 2015-11-12 | 2016-11-03 | SiC substrate separating method |
DE102016222200.7A DE102016222200A1 (de) | 2015-11-12 | 2016-11-11 | Sic-substrattrennverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2015222369A JP6562819B2 (ja) | 2015-11-12 | 2015-11-12 | SiC基板の分離方法 |
Publications (2)
Publication Number | Publication Date |
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JP2017092314A JP2017092314A (ja) | 2017-05-25 |
JP6562819B2 true JP6562819B2 (ja) | 2019-08-21 |
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Application Number | Title | Priority Date | Filing Date |
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JP2015222369A Active JP6562819B2 (ja) | 2015-11-12 | 2015-11-12 | SiC基板の分離方法 |
Country Status (8)
Country | Link |
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US (1) | US10105792B2 (ja) |
JP (1) | JP6562819B2 (ja) |
KR (1) | KR102475682B1 (ja) |
CN (1) | CN107030392B (ja) |
DE (1) | DE102016222200A1 (ja) |
MY (1) | MY180611A (ja) |
SG (1) | SG10201608938WA (ja) |
TW (1) | TWI706454B (ja) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6429715B2 (ja) * | 2015-04-06 | 2018-11-28 | 株式会社ディスコ | ウエーハの生成方法 |
JP6478821B2 (ja) * | 2015-06-05 | 2019-03-06 | 株式会社ディスコ | ウエーハの生成方法 |
JP6781639B2 (ja) * | 2017-01-31 | 2020-11-04 | 株式会社ディスコ | ウエーハ生成方法 |
JP6705399B2 (ja) * | 2017-03-06 | 2020-06-03 | 信越半導体株式会社 | ウェーハの製造方法 |
JP6920849B2 (ja) * | 2017-03-27 | 2021-08-18 | 株式会社荏原製作所 | 基板処理方法および装置 |
JP7256120B2 (ja) * | 2017-06-19 | 2023-04-11 | ローム株式会社 | 半導体装置の製造方法およびウエハ貼着構造体 |
WO2019044588A1 (ja) * | 2017-09-04 | 2019-03-07 | リンテック株式会社 | 薄型化板状部材の製造方法、及び薄型化板状部材の製造装置 |
CN111052316A (zh) * | 2017-09-04 | 2020-04-21 | 琳得科株式会社 | 薄型化板状部件的制造方法以及制造装置 |
JP7009194B2 (ja) * | 2017-12-12 | 2022-01-25 | 株式会社ディスコ | ウエーハ生成装置および搬送トレー |
JP7080555B2 (ja) * | 2018-03-16 | 2022-06-06 | 株式会社ディスコ | ウエーハの加工方法 |
US10388526B1 (en) | 2018-04-20 | 2019-08-20 | Semiconductor Components Industries, Llc | Semiconductor wafer thinning systems and related methods |
US10896815B2 (en) | 2018-05-22 | 2021-01-19 | Semiconductor Components Industries, Llc | Semiconductor substrate singulation systems and related methods |
US11121035B2 (en) | 2018-05-22 | 2021-09-14 | Semiconductor Components Industries, Llc | Semiconductor substrate processing methods |
US20190363018A1 (en) | 2018-05-24 | 2019-11-28 | Semiconductor Components Industries, Llc | Die cleaning systems and related methods |
US11830771B2 (en) | 2018-05-31 | 2023-11-28 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
US10468304B1 (en) | 2018-05-31 | 2019-11-05 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
JP7235456B2 (ja) * | 2018-08-14 | 2023-03-08 | 株式会社ディスコ | 半導体基板の加工方法 |
JP7106217B2 (ja) * | 2018-08-22 | 2022-07-26 | 株式会社ディスコ | ファセット領域の検出方法及び検出装置 |
JP7187215B2 (ja) * | 2018-08-28 | 2022-12-12 | 株式会社ディスコ | SiC基板の加工方法 |
JP7201367B2 (ja) * | 2018-08-29 | 2023-01-10 | 株式会社ディスコ | SiC基板の加工方法 |
WO2020066492A1 (ja) * | 2018-09-25 | 2020-04-02 | 東京エレクトロン株式会社 | 基板処理システム及び基板処理方法 |
JP7287982B2 (ja) * | 2018-12-21 | 2023-06-06 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
CN113165109B (zh) * | 2018-12-21 | 2023-06-27 | 东京毅力科创株式会社 | 基板处理装置和基板处理方法 |
CN113195153B (zh) * | 2018-12-21 | 2023-04-07 | 东京毅力科创株式会社 | 基板处理装置和基板处理方法 |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10576585B1 (en) * | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
KR20220032081A (ko) * | 2019-07-10 | 2022-03-15 | 도쿄엘렉트론가부시키가이샤 | 분리 장치 및 분리 방법 |
JP7405649B2 (ja) | 2020-03-04 | 2023-12-26 | 株式会社ディスコ | 被加工物の研削方法 |
JP7072180B1 (ja) * | 2021-12-20 | 2022-05-20 | 有限会社サクセス | 半導体結晶ウェハの製造方法および製造装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000094221A (ja) | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | 放電式ワイヤソー |
JP4659300B2 (ja) * | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
JP3998639B2 (ja) * | 2004-01-13 | 2007-10-31 | 株式会社東芝 | 半導体発光素子の製造方法 |
US20050217560A1 (en) * | 2004-03-31 | 2005-10-06 | Tolchinsky Peter G | Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same |
JP2010021398A (ja) * | 2008-07-11 | 2010-01-28 | Disco Abrasive Syst Ltd | ウェーハの処理方法 |
JP5446325B2 (ja) * | 2009-03-03 | 2014-03-19 | 豊田合成株式会社 | レーザ加工方法および化合物半導体発光素子の製造方法 |
JP5509448B2 (ja) * | 2009-09-07 | 2014-06-04 | 国立大学法人埼玉大学 | 基板スライス方法 |
JP5710133B2 (ja) * | 2010-03-16 | 2015-04-30 | 株式会社ディスコ | ワークの分割方法 |
DE102010030358B4 (de) * | 2010-06-22 | 2014-05-22 | Osram Opto Semiconductors Gmbh | Verfahren zum Abtrennen einer Substratscheibe |
WO2012108055A1 (ja) * | 2011-02-10 | 2012-08-16 | 信越ポリマー株式会社 | 単結晶基板製造方法および内部改質層形成単結晶部材 |
CN103380482B (zh) * | 2011-02-10 | 2016-05-25 | 信越聚合物株式会社 | 单结晶基板制造方法及内部改质层形成单结晶部件 |
JP2013041908A (ja) * | 2011-08-12 | 2013-02-28 | Disco Abrasive Syst Ltd | 光デバイスウェーハの分割方法 |
JP5917862B2 (ja) * | 2011-08-30 | 2016-05-18 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
JP6002982B2 (ja) | 2011-08-31 | 2016-10-05 | 株式会社フジシール | パウチ容器 |
JP6044919B2 (ja) * | 2012-02-01 | 2016-12-14 | 信越ポリマー株式会社 | 基板加工方法 |
JP6032789B2 (ja) * | 2012-02-01 | 2016-11-30 | 信越ポリマー株式会社 | 単結晶加工部材の製造方法、および、単結晶基板の製造方法 |
JP2014041925A (ja) * | 2012-08-22 | 2014-03-06 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
JP6267505B2 (ja) * | 2013-12-16 | 2018-01-24 | 株式会社東京精密 | レーザダイシング方法 |
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