JP6541963B2 - Light emitting device and method of manufacturing the same - Google Patents

Light emitting device and method of manufacturing the same Download PDF

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JP6541963B2
JP6541963B2 JP2014255780A JP2014255780A JP6541963B2 JP 6541963 B2 JP6541963 B2 JP 6541963B2 JP 2014255780 A JP2014255780 A JP 2014255780A JP 2014255780 A JP2014255780 A JP 2014255780A JP 6541963 B2 JP6541963 B2 JP 6541963B2
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resin
light emitting
substrate
sealing resin
light
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JP2016115897A (en
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加藤　達也
達也 加藤
福田　匡広
福田　　匡広
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Citizen Electronics Co Ltd
Citizen Watch Co Ltd
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Citizen Watch Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

Description

本発明は、光の取り出し効率を向上させた発光装置に関するものであり、特に照明用の発光装置及びその製造方法に関するものである。   The present invention relates to a light emitting device with improved light extraction efficiency, and more particularly to a light emitting device for illumination and a method of manufacturing the same.

従来、発光ダイオード等の発光素子を用いた照明用の発光装置では、基板上に実装された発光素子を枠状の樹脂で囲い、発光素子を封止する封止樹脂を枠状の樹脂内に充填していた。このような発光装置では、基板上に設けられた配線パターン、枠状の樹脂、封止樹脂等によって発光素子が発する光が吸収され、光の取り出し効率を低下させることがあった。   Conventionally, in a light emitting device for illumination using a light emitting element such as a light emitting diode, the light emitting element mounted on a substrate is surrounded by a frame-like resin, and a sealing resin for sealing the light emitting element is contained in the frame-like resin. It was filling. In such a light emitting device, the light emitted from the light emitting element may be absorbed by the wiring pattern, the frame-like resin, the sealing resin or the like provided on the substrate, which may lower the light extraction efficiency.

そこで、発光素子を囲うように樹脂を１段又は数段積み上げて形成した反射体を設けて、発光素子からの光を基板の上方へ導くように構成した照明装置が提案されている（例えば、特許文献１参照）。   Therefore, a lighting device has been proposed in which a reflector formed by stacking one or more steps of resin is provided to surround the light emitting element, and light from the light emitting element is guided to the upper side of the substrate (for example, Patent Document 1).

また、基板上の導体配線とワイヤーの一部を光反射樹脂内に埋設した発光装置も提案されている（例えば、特許文献２参照）。   In addition, a light emitting device has also been proposed in which a conductor wiring and a part of a wire on a substrate are embedded in a light reflecting resin (see, for example, Patent Document 2).

更に、発光素子を囲う枠部を透明な樹脂に光拡散材を混入した樹脂で形成した光源装置も提案されている（例えば、特許文献３参照）。   Furthermore, a light source device has also been proposed in which a frame portion surrounding a light emitting element is formed of a resin in which a light diffusing material is mixed in a transparent resin (see, for example, Patent Document 3).

特開２００８−４１２９０号公報JP, 2008-41290, A 特開２００９−１６４１５７号公報JP, 2009-164157, A 特開２０１３−１９７３６９号公報JP, 2013-197369, A

上記特許文献１の照明装置では、反射体により基板上の電極が完全に覆われていないため、電極部分の光の吸収を防ぐことができなかった。また、特許文献２の発光装置では、導体配線を光反射樹脂で覆っているが、高い枠状の光反射樹脂で発光素子を囲っているため、光の広がりがなくなり、照明用の発光装置としては改善が必要であった。更に、特許文献３の光源装置では、枠部が光を透過して光の広がりを得られるものの、配線パターン等による光の吸収を防ぐことはできないものであった。   In the lighting device of Patent Document 1, since the electrode on the substrate is not completely covered by the reflector, the light absorption of the electrode portion can not be prevented. Further, in the light emitting device of Patent Document 2, the conductor wiring is covered with the light reflecting resin, but since the light emitting element is surrounded by the light frame-like light reflecting resin, the spread of light is eliminated and the light emitting device for illumination is used. Needed improvement. Furthermore, in the light source device of Patent Document 3, although the frame portion transmits the light to obtain the spread of the light, the light absorption by the wiring pattern or the like can not be prevented.

本発明が解決しようとする課題は、上記従来技術の問題点を解決し、配線パターン等の光の吸収を防ぎながら光の広がりを得ることで、光の取り出し効率を高めた発光装置及びその製造方法を提供することにある。   The problem to be solved by the present invention is to solve the problems of the above-mentioned prior art and to obtain light spreading while preventing absorption of light such as a wiring pattern, thereby enhancing light extraction efficiency and manufacturing thereof To provide a way.

本発明の一の実施形態に係る発光装置は、基板と、該基板上に実装された発光素子と、前記基板上における前記発光素子が実装されている発光エリアの周囲に設けられた配線パターンと、光を反射し、前記配線パターンを覆うパターン封止樹脂と、該パターン封止樹脂上に設けられて前記発光エリアを囲う透明な枠状樹脂と、該枠状樹脂の内側に設けられて前記発光素子を封止する封止樹脂と、を備え、前記パターン封止樹脂と枠状樹脂は、光を反射散乱する散乱剤粒子が混入された透明な樹脂により一体形成され、その下部に前記散乱剤粒子が沈殿して高濃度となることで前記パターン封止樹脂が形成され、上部における前記散乱剤粒子が低濃度となることで前記枠状樹脂が形成されている。 A light emitting device according to one embodiment of the present invention includes a substrate, a light emitting element mounted on the substrate, and a wiring pattern provided around a light emitting area on the substrate on which the light emitting element is mounted. A pattern sealing resin for reflecting the light and covering the wiring pattern, a transparent frame resin provided on the pattern sealing resin and surrounding the light emitting area, and provided inside the frame resin And a sealing resin for sealing the light emitting element, wherein the pattern sealing resin and the frame-like resin are integrally formed of a transparent resin mixed with scattering agent particles that scatter and scatter light, and the scattering is performed under the same. The pattern sealing resin is formed by the precipitation of the agent particles to a high concentration, and the frame-shaped resin is formed by the low concentration of the scattering agent particles in the upper portion .

また、本発明の他の実施形態に係る発光装置は、金属基板と該金属基板上に固着され発光エリアに対応する部分に孔が設けられた樹脂基板とからなる基板と、前記樹脂基板の孔内の前記金属基板上に実装された発光素子と、前記樹脂基板の孔の周囲に設けられた配線パターンと、光を反射し、前記樹脂基板の孔の縁及び内周面を覆う周面封止樹脂と、光を反射し、前記配線パターンを覆うパターン封止樹脂と、該パターン封止樹脂上に設けられて前記発光エリアを囲う透明な枠状樹脂と、該枠状樹脂の内側に設けられて前記発光素子を封止する封止樹脂と、を備え、前記パターン封止樹脂と枠状樹脂は、光を反射散乱する散乱剤粒子が混入された透明な樹脂により一体形成され、その下部に前記散乱剤粒子が沈殿して高濃度となることで前記パターン封止樹脂が形成され、上部における前記散乱剤粒子が低濃度となることで前記枠状樹脂が形成されている。
A light emitting device according to another embodiment of the present invention comprises a substrate comprising a metal substrate and a resin substrate fixed on the metal substrate and provided with a hole in a portion corresponding to a light emitting area, and a hole of the resin substrate A light emitting element mounted on the metal substrate, a wiring pattern provided around the hole of the resin substrate, and a peripheral surface sealing which reflects light and covers the edge and the inner circumferential surface of the hole of the resin substrate A resin sealing resin, a pattern sealing resin for reflecting the light and covering the wiring pattern, a transparent frame resin provided on the pattern sealing resin to surround the light emitting area, and provided inside the frame resin A sealing resin for sealing the light emitting element, and the pattern sealing resin and the frame-like resin are integrally formed of a transparent resin mixed with scattering agent particles for reflecting and scattering light , and the lower part thereof The scatterer particles are precipitated on the Turn the sealing resin is formed, the scattering agent particles in the upper is the frame-like resin is formed by a low concentration.

また、この発光装置における前記周面封止樹脂は、前記金属基板の上面から前記樹脂基板の上面に向かってせり上がるように傾斜して設けられている。また、前記発光装置における前記パターン封止樹脂は、その上面が内側から外側に向かってせり上がるように傾斜して設けられている。   In addition, the peripheral surface sealing resin in the light emitting device is provided to be inclined so as to rise from the upper surface of the metal substrate to the upper surface of the resin substrate. Further, the pattern sealing resin in the light emitting device is provided to be inclined such that the upper surface thereof is lifted from the inside to the outside.

また、この発光装置における前記周面封止樹脂は、複数の樹脂層により形成されている Also, it puts that before Symbol periphery sealing resin to the light-emitting device is formed by a plurality of resin layers

また、この発光装置における前記光を反射散乱する散乱剤粒子が混入された透明な樹脂は、その下部に前記散乱剤粒子が沈殿して高濃度となることで前記パターン封止樹脂が形成され、上部における前記散乱剤粒子が低濃度となることで前記枠状樹脂が形成されている。 Further, a transparent resin scattering agent particles are mixed to reflect scatter before Symbol light in this light emitting device, the pattern the sealing resin is formed by the scattering agent particles thereunder a high concentration to precipitate The frame-like resin is formed by the low concentration of the scattering agent particles in the upper part.

一方、本発明の発光装置の製造方法は、発光素子が実装される発光エリアの周囲に配線パターンが設けられた基板上に発光素子を実装する工程と、前記配線パターンの外周を囲うマスク部材を前記基板上に取り付ける工程と、光を反射散乱する散乱剤粒子が混入された透明な樹脂で前記配線パターンを覆うことで前記発光エリアの周囲を囲い、前記発光エリアの中央に垂直な中心軸を中心として前記基板を回転させるスピンコートを施す工程と、前記透明な樹脂内の散乱剤粒子が下方に沈殿して上下２層に分離し硬化することで前記配線パターンを封止するパターン封止樹脂とその上に設けられる前記発光エリアを囲う枠状樹脂とを形成する工程と、前記マスク部材を除去する工程と、前記枠状樹脂の内側に封止樹脂を充填して前記発光素子を封止する工程と、からなるものである。 On the other hand, the method of manufacturing a light emitting device according to the present invention comprises the steps of mounting the light emitting element on a substrate provided with a wiring pattern around the light emitting area where the light emitting element is mounted, and a mask member surrounding the outer periphery of the wiring pattern. The step of mounting on the substrate, and covering the wiring pattern with a transparent resin mixed with scattering agent particles that scatter and scatter light, to surround the periphery of the light emitting area, and center axis perpendicular to the center of the light emitting area A process of applying spin coating to rotate the substrate as a center, and a pattern sealing resin for sealing the wiring pattern by separating and curing the scatterer particles in the transparent resin downward and separating it into upper and lower two layers And forming a frame-shaped resin surrounding the light-emitting area provided thereon, removing the mask member, and filling the sealing resin inside the frame-shaped resin to form the light-emitting element A step of sealing, is made of.

また、この発光装置の製造方法における前記パターン封止樹脂は、スピンコート時にその上面が内側から外側に向かってせり上がるように傾斜して形成されている。
Further, the pattern sealing resin in the method of manufacturing a light emitting device is formed to be inclined such that the upper surface thereof is lifted from the inside to the outside at the time of spin coating .

本発明の発光装置では、光を反射するパターン封止樹脂で配線パターンを覆い、透明な枠状樹脂をパターン封止樹脂の上に設けているので、配線パターンを確実に覆って光を反射させ、更に枠状樹脂を透過して光が周囲に広がるようにすることができる。これにより、光の取り出し効率を向上させることができる。   In the light emitting device of the present invention, since the wiring pattern is covered with the pattern sealing resin that reflects light, and the transparent frame resin is provided on the pattern sealing resin, the wiring pattern is reliably covered to reflect the light. Furthermore, light can be transmitted to the surroundings by transmitting through the frame-like resin. Thereby, the light extraction efficiency can be improved.

また、放熱性を考慮した樹脂基板と金属基板とを重ねた基板の場合であっても、発光素子が設けられた発光エリアを囲う配線パターンだけでなく、発光エリアを囲う樹脂基板の孔の縁及び内周面を光が反射する周面封止樹脂で覆うことにより、発光素子からの光が樹脂基板を透過することを防いでいる。これにより、上方の照射方向への光取り出し効率を向上させることができる。   In addition, even in the case of a substrate in which a resin substrate and a metal substrate in consideration of heat dissipation are overlapped, not only the wiring pattern surrounding the light emitting area provided with the light emitting element but also the edge of the hole of the resin substrate surrounding the light emitting area And by covering the inner peripheral surface with a peripheral surface sealing resin from which light is reflected, light from the light emitting element is prevented from transmitting through the resin substrate. Thereby, the light extraction efficiency in the upper irradiation direction can be improved.

また、周面封止樹脂は、金属基板の上面から樹脂基板の上面に向かってせり上がるように傾斜して設けられ、パターン封止樹脂は、その上面が内側から外側に向かってせり上がるように傾斜して設けられているので、発光素子からの光を上方の照射方向に向かって反射することができる。   In addition, the peripheral surface sealing resin is provided so as to rise from the upper surface of the metal substrate toward the upper surface of the resin substrate, and the pattern sealing resin is such that the upper surface thereof is raised from the inside to the outside. Since it is provided in an inclined manner, light from the light emitting element can be reflected toward the upper irradiation direction.

また、パターン封止樹脂と枠状樹脂は、その一方又は両方が複数の樹脂層により形成され、周面封止樹脂は、複数の樹脂層により形成されているので、それらを形成する位置や高さを細かく設定することができ、精度よく形成することができる。更に、パターン封止樹脂や周面封止樹脂の上面を容易に傾斜させて形成することもできる。   In addition, one or both of the pattern sealing resin and the frame-like resin are formed of a plurality of resin layers, and the peripheral surface sealing resin is formed of a plurality of resin layers. The length can be set finely and can be formed precisely. Furthermore, the upper surfaces of the pattern sealing resin and the peripheral surface sealing resin can be easily inclined.

また、光を反射散乱する散乱剤粒子が混入された透明な樹脂で配線パターンを覆うことにより、その下部に散乱剤粒子が沈殿して高濃度となり、上部における散乱剤粒子が低濃度となる。これにより、一体に形成された樹脂の下部と上部にパターン封止樹脂と枠状樹脂を一括して形成することができる。   In addition, by covering the wiring pattern with a transparent resin mixed with scattering agent particles that scatter and scatter light, the scattering agent particles are precipitated at the lower portion thereof to have a high concentration, and the scattering agent particles at the upper portion have a low concentration. As a result, the pattern sealing resin and the frame-like resin can be collectively formed on the lower and upper portions of the integrally formed resin.

また、本発明の発光装置の製造方法では、発光素子を基板にダイボンドした後、周面封止樹脂の一部となる内壁部を発光エリアの周囲に形成し、その後、配線パターンと基板の孔の縁及び内周面を覆うパターン封止樹脂と周面封止樹脂を形成している。これにより、周面封止樹脂を形成する際に、位置決めが容易となり、また、樹脂が発光エリア内に入り込むことを防ぐことができる。   Further, in the method of manufacturing a light emitting device according to the present invention, after the light emitting element is die-bonded to the substrate, an inner wall portion to be a part of peripheral surface sealing resin is formed around the light emitting area. The pattern sealing resin and the peripheral surface sealing resin are formed to cover the edge and the inner peripheral surface of the Accordingly, when forming the peripheral surface sealing resin, positioning is facilitated, and the resin can be prevented from entering the light emitting area.

また、本発明の発光装置の製造方法では、光を反射散乱する散乱剤粒子が混入された透明な樹脂で配線パターンを覆うと共に基板を回転させるスピンコートを施している。これにより、パターン封止樹脂の上面が内側から外側に向かってせり上がるように傾斜して形成され、光を上方の照射方向へ反射するように設定することができる。   Further, in the method of manufacturing a light emitting device according to the present invention, spin coating is applied to cover the wiring pattern with a transparent resin mixed with scattering agent particles that scatter and scatter light and to rotate the substrate. Accordingly, the upper surface of the pattern sealing resin is formed to be inclined so as to rise from the inner side to the outer side, and light can be set to be reflected in the upper irradiation direction.

本発明の第１の実施形態に係る発光装置を示す斜視図である。FIG. 1 is a perspective view showing a light emitting device according to a first embodiment of the present invention. 図１に示す発光装置の断面図である。It is sectional drawing of the light-emitting device shown in FIG. 図２に示す発光装置の要部拡大図である。It is a principal part enlarged view of the light-emitting device shown in FIG. 本発明の第２の実施形態に係る発光装置を示す斜視図である。It is a perspective view which shows the light-emitting device which concerns on the 2nd Embodiment of this invention. 図４に示す発光装置の断面図である。It is sectional drawing of the light-emitting device shown in FIG. 図５に示す発光装置の要部拡大図である。It is a principal part enlarged view of the light-emitting device shown in FIG. 図４に示す発光装置の基板のみを示す斜視図である。It is a perspective view which shows only the board | substrate of the light-emitting device shown in FIG. 図７に示す基板の断面図である。It is sectional drawing of the board | substrate shown in FIG. 図７に示す基板に発光素子をダイボンドした状態を示す斜視図である。It is a perspective view which shows the state which die-bonded the light emitting element to the board | substrate shown in FIG. 図９に示す基板の断面図である。It is sectional drawing of the board | substrate shown in FIG. 図９に示す基板の発光エリアの周囲に周面封止樹脂の一部となる内壁部を形成した状態を示す斜視図である。It is a perspective view which shows the state which formed the inner wall part which becomes a part of surrounding surface sealing resin around the light emission area of the board | substrate shown in FIG. 図１１に示す基板の断面図である。It is sectional drawing of the board | substrate shown in FIG. 図１２に示す状態にある発光素子と配線パターンをワイヤーボンドした状態を示す斜視図である。It is a perspective view which shows the state which wire-bonded the light emitting element in the state shown in FIG. 12, and a wiring pattern. 図１３に示す基板の断面図である。It is sectional drawing of the board | substrate shown in FIG. 図１３に示す状態にある配線パターンと基板の孔の縁及び内面にパターン封止樹脂と周面封止樹脂を形成した状態を示す斜視図である。It is a perspective view which shows the state which formed pattern sealing resin and peripheral surface sealing resin in the edge and inner surface of the wiring pattern in the state shown in FIG. 13, and a hole of a board | substrate. 図１５に示す基板の断面図である。It is sectional drawing of the board | substrate shown in FIG. 図１５に示すパターン封止樹脂の上に枠状樹脂を形成した状態を示す斜視図である。It is a perspective view which shows the state which formed frame-shaped resin on pattern sealing resin shown in FIG. 図１７に示す基板の断面図である。FIG. 18 is a cross-sectional view of the substrate shown in FIG. 第１の実施形態において発光素子を実装した状態の基板を示す断面図である。It is sectional drawing which shows the board | substrate of the state which mounted the light emitting element in 1st Embodiment. 図１９に示す状態にある基板の発光エリアの周囲にマスク部材を取り付けた状態を示す断面図である。FIG. 20 is a cross-sectional view showing a state where a mask member is attached around the light emitting area of the substrate in the state shown in FIG. 19; 図２０に示す状態にある配線パターンの上に散乱剤粒子が混入された透明な樹脂を載せた状態を示す断面図である。It is sectional drawing which shows the state which mounted the transparent resin in which the scattering particle was mixed on the wiring pattern in the state shown in FIG. 図２１に示す状態にある基板を回転させる状態を示す断面図である。FIG. 22 is a cross-sectional view showing a state where the substrate in the state shown in FIG. 21 is rotated. 図２２に示す状態にある基板を回転させた後の状態を示す断面図である。FIG. 23 is a cross-sectional view showing a state after the substrate in the state shown in FIG. 22 is rotated. 図２２に示すマスク部材を取り除いた状態を示す断面図である。FIG. 23 is a cross-sectional view showing a state in which the mask member shown in FIG. 22 is removed. 第１の実施形態において発光素子を実装した状態の基板の配線パターンの上に第１の樹脂層を設けた状態を示す断面図である。It is sectional drawing which shows the state which provided the 1st resin layer on the wiring pattern of the board | substrate of the state which mounted the light emitting element in 1st Embodiment. 図２５に示す第１の樹脂層の上に第２の樹脂層を設けた状態を示す断面図である。It is sectional drawing which shows the state which provided the 2nd resin layer on the 1st resin layer shown in FIG. 図２６に示す第２の樹脂層の上に第３の樹脂層を設けた状態を示す断面図である。It is sectional drawing which shows the state which provided the 3rd resin layer on the 2nd resin layer shown in FIG. 図２７に示す第３の樹脂層の上に第４の樹脂層を設けた状態を示す断面図である。FIG. 28 is a cross-sectional view showing a state in which a fourth resin layer is provided on the third resin layer shown in FIG. 27.

図１乃至図３に示す本発明の第１の実施形態に係る発光装置１では、セラミック等の基板２の中央に複数の発光素子３が実装されている。基板２には、発光素子３が実装されている発光エリア３Ａを囲むように金メッキ等で形成される配線パターン４が（図７に示すそれぞれ半円形のパターンと同様に）設けられている。発光素子３は幾つかのグループに分かれて配線パターン４，５間に直列にワイヤー６で接続されている。   In the light emitting device 1 according to the first embodiment of the present invention shown in FIGS. 1 to 3, the plurality of light emitting elements 3 are mounted at the center of the substrate 2 made of ceramic or the like. A wiring pattern 4 formed by gold plating or the like is provided on the substrate 2 so as to surround the light emitting area 3A on which the light emitting element 3 is mounted (similar to the semicircular patterns shown in FIG. 7). The light emitting elements 3 are divided into several groups and connected in series between the wiring patterns 4 and 5 by the wires 6.

配線パターン４，５の上には、それらを覆うように、白色光等を反射する色の顔料や光を反射拡散する散乱剤粒子等をエポキシ樹脂、シリコン樹脂等に混入したパターン封止樹脂７が設けられている。なお、このパターン封止樹脂７は、配線パターン４，５に沿ってそれぞれ設けられるか、又は一連の環状をなすように設けられている。   On the wiring patterns 4 and 5, a pattern sealing resin 7 in which a pigment of a color that reflects white light or the like, a scattering agent particle that reflects and diffuses light, etc. is mixed in an epoxy resin, silicon resin, etc. Is provided. The pattern sealing resin 7 is provided along the wiring patterns 4 and 5, respectively, or in a series of rings.

このパターン封止樹脂７の上には、エポキシ樹脂、シリコン樹脂等の透明な樹脂からなる枠状樹脂８が設けられている。この枠状樹脂８は、パターン封止樹脂７と共に、発光エリア３Ａを囲う環状に形成されている。   A frame-shaped resin 8 made of a transparent resin such as an epoxy resin or a silicon resin is provided on the pattern sealing resin 7. The frame-shaped resin 8 is formed in a ring shape surrounding the light emitting area 3A together with the pattern sealing resin 7.

枠状樹脂８の内側には、蛍光体を含有するエポキシ樹脂、シリコン樹脂等の樹脂からなる封止樹脂９が設けられている。この封止樹脂９により発光素子３とワイヤー６は封止されている。   Inside the frame-shaped resin 8 is provided a sealing resin 9 made of a resin such as an epoxy resin containing a phosphor and a silicone resin. The light emitting element 3 and the wire 6 are sealed by the sealing resin 9.

上記構成からなる発光装置１では、配線パターン４，５をパターン封止樹脂７で覆っているので、配線パターン４，５が光を吸収することがなくなる。また、パターン封止樹脂７が光を反射するので、上方の照射方向へ向かう光が増加することになり、パターン封止樹脂７を設けなかった場合に比べて、光の取り出し効率が１％向上することが確認できた。さらに、透明な枠状樹脂８を設けることで、光が外周方向にも広がり、光の広がりを必要とする照明として好ましい状態になる。そして、透明な枠状樹脂８を設けると、白色の枠を設けた場合に比べて、光の取り出し効率が０．４％向上することが確認できた。これは、白色の枠の場合、光を全て反射するのではなく一部吸収しながら反射するため、透明な枠を使用した方が光の吸収が減り、光の取り出し効率が向上することに起因している。   In the light emitting device 1 configured as described above, since the wiring patterns 4 and 5 are covered with the pattern sealing resin 7, the wiring patterns 4 and 5 do not absorb light. In addition, since the pattern sealing resin 7 reflects light, the light traveling toward the upper irradiation direction is increased, and the light extraction efficiency is improved by 1% as compared with the case where the pattern sealing resin 7 is not provided. It could be confirmed that Furthermore, by providing the transparent frame-shaped resin 8, the light also spreads in the outer peripheral direction, which is a preferable state for illumination requiring the spread of the light. And when transparent frame-like resin 8 was provided, compared with the case where a white frame was provided, it has confirmed that the extraction efficiency of light improved 0.4%. This is because in the case of a white frame, the light is reflected while being partially absorbed instead of being totally reflected, so the use of a transparent frame reduces the light absorption and improves the light extraction efficiency. doing.

図４乃至図６には本発明の第２の実施形態に係る発光装置１１が示されている。この発光装置１１における基板１２は、熱伝導率が高く放熱性に優れた金属、合金からなる金属基板１２Ａと、その上に重ねて固着されたガラスエポキシ等の樹脂からなる樹脂基板１２Ｂとからなる。金属基板１２Ａは矩形状の板からなり、中央に複数の発光素子１３が実装されている。また、樹脂基板１２Ｂは、金属基板１２Ａにおける発光素子１３が実装された発光エリア１３Ａに対応する部分に孔１２ａを有している。この樹脂基板１２Ａには、孔１２ａの周囲に配線パターン１４，１５が設けられている。   A light emitting device 11 according to a second embodiment of the present invention is shown in FIGS. 4 to 6. The substrate 12 in the light emitting device 11 is composed of a metal substrate 12A made of metal or alloy having high thermal conductivity and excellent heat dissipation, and a resin substrate 12B made of resin such as glass epoxy fixed on top of the metal substrate 12A. . The metal substrate 12A is formed of a rectangular plate, and a plurality of light emitting elements 13 are mounted at the center. Further, the resin substrate 12B has holes 12a in a portion corresponding to the light emitting area 13A on the metal substrate 12A in which the light emitting element 13 is mounted. Wiring patterns 14 and 15 are provided in the resin substrate 12A around the holes 12a.

発光素子１３は、発光装置１の発光素子３と同様に、幾つかのグループに分かれて配線パターン１４，１５間に直列にワイヤー１６で接続されている。また、配線パターン１４，１５も、発光装置１の配線パターン４，５と同様に、発光エリア１３Ａを囲むように金メッキ等でそれぞれ半円形等に形成されている。   Like the light emitting element 3 of the light emitting device 1, the light emitting elements 13 are divided into several groups and connected in series between the wiring patterns 14 and 15 by wires 16. Similarly to the wiring patterns 4 and 5 of the light emitting device 1, the wiring patterns 14 and 15 are also formed in a semicircular shape or the like by gold plating or the like so as to surround the light emitting area 13A.

この発光装置１１における配線パターン１４，１５の上にも、発光装置１のパターン封止樹脂７と同様の、光を反射するパターン封止樹脂１７が設けられている。このパターン封止樹脂１７も、配線パターン１４，１５に沿ってそれぞれ設けられるか、又は一連の環状をなすように設けられている。また、このパターン封止樹脂１７の上には、発光装置１の枠状樹脂８と同様の、透明な枠状樹脂１８が設けられている。この枠状樹脂１８も、発光エリア１３Ａを囲うように環状に形成されている。   Also on the wiring patterns 14 and 15 in the light emitting device 11, a pattern sealing resin 17 for reflecting light similar to the pattern sealing resin 7 of the light emitting device 1 is provided. The pattern sealing resin 17 is also provided along the wiring patterns 14 and 15, respectively, or in a series of rings. In addition, on the pattern sealing resin 17, a transparent frame-shaped resin 18 similar to the frame-shaped resin 8 of the light emitting device 1 is provided. The frame-shaped resin 18 is also formed annularly so as to surround the light emitting area 13A.

この発光装置１１における基板１２上には、さらに、周面封止樹脂２０とその一部となる内壁部２１が設けられている。この周面封止樹脂２０は、発光エリア１３Ａに面する又は隣接する樹脂基板１２Ｂの孔１２ａの内周面１２ｂと、孔１２ａの縁１２ｃを覆うものであり、パターン封止樹脂１７と同様に、光を反射する樹脂からなるものである。また、内壁部２１は、金属基板１２Ａ上における発光エリア１３Ａを囲うように孔１２ａの内周面１２ｂに沿って環状に設けられている。この内壁部２１は、周面封止樹脂２０の内側に設けられており、この内壁部２１と孔１２ａの内周面１２ｂ及び縁１２ｃとの間に周面封止樹脂２０が設けられている。   Further, on the substrate 12 in the light emitting device 11, a peripheral surface sealing resin 20 and an inner wall portion 21 to be a part of the peripheral surface sealing resin 20 are provided. The peripheral surface sealing resin 20 covers the inner peripheral surface 12b of the hole 12a of the resin substrate 12B facing or adjacent to the light emitting area 13A and the edge 12c of the hole 12a. And the resin which reflects light. Further, the inner wall portion 21 is annularly provided along the inner peripheral surface 12b of the hole 12a so as to surround the light emitting area 13A on the metal substrate 12A. The inner wall portion 21 is provided inside the circumferential surface sealing resin 20, and the circumferential surface sealing resin 20 is provided between the inner wall portion 21 and the inner circumferential surface 12b and the edge 12c of the hole 12a. .

本実施形態における周面封止樹脂２０は、内壁部２１と孔１２ａの内周面１２ｂとの間に設けられる内周面封止部２０ａと、この内周面封止部２０ａと孔１２ａの縁１２ｃとの間に設けられる縁封止部２０ｂとから構成されている。内壁部２１は樹脂基板１２Ｂの厚み程度の高さに形成されており、内周面封止部２０ａは内壁部２１よりわずかに高く形成され、縁封止部２０ｂは内周面封止部２０ａよりわずかに高く形成されている。これにより、周面封止樹脂２０は金属基板１２Ａの上面から樹脂基板１２Ｂの上面に向かってせり上がるように傾斜して形成されることになる。なお、本実施形態における内壁部２１は、周面封止樹脂２０と一体になってその一部を構成しており、周面封止樹脂２０と同じ光を反射する樹脂で形成されている。   The peripheral surface sealing resin 20 in the present embodiment includes an inner peripheral surface sealing portion 20a provided between the inner wall portion 21 and the inner peripheral surface 12b of the hole 12a, and the inner peripheral surface sealing portion 20a and the hole 12a. And an edge sealing portion 20b provided between the edge 12c and the edge 12c. The inner wall portion 21 is formed at a height of about the thickness of the resin substrate 12B, the inner peripheral surface sealing portion 20a is formed slightly higher than the inner wall portion 21, and the edge sealing portion 20b is an inner peripheral surface sealing portion 20a. It is formed slightly higher. Thus, the peripheral surface sealing resin 20 is formed to be inclined so as to rise from the upper surface of the metal substrate 12A to the upper surface of the resin substrate 12B. The inner wall portion 21 in the present embodiment is integrated with the circumferential surface sealing resin 20 to form a part thereof, and is formed of a resin that reflects the same light as the circumferential surface sealing resin 20.

この発光装置１１におけるパターン封止樹脂１７の上にも、発光装置１の枠状樹脂８と同様の、透明な枠状樹脂１８が発光エリア１３Ａを囲うように設けられている。また、この枠成樹脂１８の内側にも、発光装置１の封止樹脂９と同様の、封止樹脂１９が設けられており、発光素子１３及びワイヤー１６を封止している。   A transparent frame-shaped resin 18 similar to the frame-shaped resin 8 of the light emitting device 1 is provided on the pattern sealing resin 17 in the light emitting device 11 so as to surround the light emitting area 13A. In addition, a sealing resin 19 similar to the sealing resin 9 of the light emitting device 1 is provided also inside the framed resin 18 to seal the light emitting element 13 and the wire 16.

上記構成からなる発光装置１１では、前述した発光装置１と同様に、パターン封止樹脂１７を設けたことで、配線パターン１４，１５が光を吸収することがなくなり、また、パターン封止樹脂１７が光を反射して照射方向へ向かう光を増すことができる。さらに、透明な枠状樹脂１８を設けることで、光が外周方向にも広がることになる。   In the light emitting device 11 having the above configuration, as in the light emitting device 1 described above, by providing the pattern sealing resin 17, the wiring patterns 14 and 15 no longer absorb light, and the pattern sealing resin 17 Can reflect the light and increase the light directed to the illumination direction. Furthermore, by providing the transparent frame-shaped resin 18, the light also spreads in the outer peripheral direction.

また、発光エリア１３Ａに面する又は隣接する樹脂基板１２Ａの孔１２ａの内周面１２ｂと縁１２ｃを周面封止樹脂２０で覆っているので、発光素子１３からの光が樹脂基板１２Ａに吸収されることを防ぐことができる。さらに、周面封止樹脂２０及び内壁部２１が光を反射し、それらの上面が内側から外側にせり上がるように傾斜しているため、発光素子１３からの光を上方の照射方向へ向けて反射する。これにより、前述した発光装置１と同様に、パターン封止樹脂１７と枠状樹脂１８を設けたことによる効果によって、光の取り出し効率を向上させることができる。   Further, since the inner peripheral surface 12b and the edge 12c of the hole 12a of the resin substrate 12A facing or adjacent to the light emitting area 13A are covered with the peripheral surface sealing resin 20, the light from the light emitting element 13 is absorbed by the resin substrate 12A. Can be prevented. Furthermore, since the peripheral surface sealing resin 20 and the inner wall portion 21 reflect light, and the upper surfaces thereof are inclined so as to rise from the inner side to the outer side, the light from the light emitting element 13 is directed in the upper irradiation direction. reflect. Thus, as in the light emitting device 1 described above, the light extraction efficiency can be improved by the effect of providing the pattern sealing resin 17 and the frame-like resin 18.

次に、図７乃至図１８に基づいて上記発光装置１１の製造方法を説明する。図７及び図８に示すように、この発光装置１１の基板１２は、中央に発光素子を実装する発光エリア１３Ａが設けられた金属基板１２Ａに、発光エリア１３Ａに適合する孔１２ａと、その縁にそれぞれ半円形状に形成された配線パターン１４，１５と、を有する樹脂基板１２Ｂを重ねて固着したものである。   Next, a method of manufacturing the light emitting device 11 will be described based on FIGS. 7 to 18. As shown in FIGS. 7 and 8, the substrate 12 of the light emitting device 11 has a hole 12a that fits the light emitting area 13A in the metal substrate 12A provided with the light emitting area 13A in which the light emitting element is mounted at the center, and its edge The resin substrates 12B each having the wiring patterns 14 and 15 formed in a semicircular shape on top of each other are stacked and fixed.

はじめに、図９及び図１０に示すように、金属基板１２Ａ上に複数の発光素子１３をダイボンドすることで実装する。   First, as shown in FIGS. 9 and 10, a plurality of light emitting elements 13 are mounted on a metal substrate 12A by die bonding.

その後、図１１及び図１２に示すように、ポッティング等により、発光素子１３を囲うように樹脂基板１２Ｂの孔１２ａの内周面１２ｂに沿って内壁部２１を金属基板１２Ａ上に形成する。   Thereafter, as shown in FIGS. 11 and 12, the inner wall 21 is formed on the metal substrate 12A along the inner peripheral surface 12b of the hole 12a of the resin substrate 12B so as to surround the light emitting element 13 by potting or the like.

ここで、図１３及び図１４に示すように、ワイヤー１６で発光素子１３を配線パターン１４，１５に接続すると共に隣接する発光素子１３を接続する。このときに、内壁部２１は樹脂基板１２Ａの厚みとほぼ同じ高さに形成されているので、この内壁部２１を飛び越すようにワイヤー１６を張っても、ワイヤー１６を特別に高く湾曲させる必要はない。従って、その後に形成される枠状樹脂１８等も特に高く形成する必要はないものであり、発光装置１１の厚みが増すことはない。   Here, as shown in FIG. 13 and FIG. 14, the light emitting element 13 is connected to the wiring patterns 14 and 15 by the wire 16 and the adjacent light emitting element 13 is connected. At this time, since the inner wall portion 21 is formed to have substantially the same height as the thickness of the resin substrate 12A, even if the wire 16 is stretched so as to jump over the inner wall portion 21, it is necessary to curve the wire 16 specially high. Absent. Accordingly, it is not necessary to form the frame-shaped resin 18 or the like to be formed particularly high thereafter, and the thickness of the light emitting device 11 does not increase.

その後、図１５及び図１６に示すように、ポッティング等により、パターン封止樹脂１７と周面封止樹脂２０を環状に形成する。このパターン封止樹脂１７は、配線パターン１４，１５の上に一連の環状に設けられ、配線パターン１４，１５を覆っている。また、周面封止樹脂２０は、内壁部２１と孔１２ａの内周面１２ｂとの間に内周面封止部２０ａを設け、この内周面封止部２０ａと孔１２ａの縁１２ｃとの間に縁封止部２０ｂを設けることで形成されている。このように、内壁部２１、内周面封止部２０ａ、縁封止部２０ｂを順次積み上げることで、周面封止樹脂２０の上面が金属基板１２Ａの上面から樹脂基板１２Ｂの上面に向かってせり上がるように傾斜して形成される。なお、周面封止樹脂２０を形成する際に、発光素子１３を配線パターン１４，１５に接続するワイヤー１６の上から樹脂を垂らすことにより所定位置に形成している。   Thereafter, as shown in FIGS. 15 and 16, the pattern sealing resin 17 and the peripheral surface sealing resin 20 are formed in a ring shape by potting or the like. The pattern sealing resin 17 is provided in a series of rings on the wiring patterns 14 and 15 to cover the wiring patterns 14 and 15. In addition, the peripheral surface sealing resin 20 is provided with an inner peripheral surface sealing portion 20a between the inner wall portion 21 and the inner peripheral surface 12b of the hole 12a, and the inner peripheral surface sealing portion 20a and the edge 12c of the hole 12a And the edge sealing portion 20b. Thus, by sequentially stacking the inner wall portion 21, the inner peripheral surface sealing portion 20a, and the edge sealing portion 20b, the upper surface of the peripheral surface sealing resin 20 is directed from the upper surface of the metal substrate 12A toward the upper surface of the resin substrate 12B. It is inclined and formed to rise. When the peripheral surface sealing resin 20 is formed, the resin is dropped from above the wires 16 connecting the light emitting elements 13 to the wiring patterns 14 and 15 so as to be formed at predetermined positions.

その後、図１７及び図１８に示すように、パターン封止樹脂１７の上に枠状樹脂１８を環状に形成する。そして、この枠状樹脂１８の内側に蛍光体等を混入した封止樹脂１９を充填することで図４乃至図６に示す発光装置１１が完成する。   Thereafter, as shown in FIG. 17 and FIG. 18, the frame-shaped resin 18 is annularly formed on the pattern sealing resin 17. Then, the inside of the frame-shaped resin 18 is filled with the sealing resin 19 in which a fluorescent material or the like is mixed, whereby the light emitting device 11 shown in FIGS. 4 to 6 is completed.

上記製造方法によれば、内壁部２１を形成してから周面封止樹脂２０を形成することで、内壁部２１を基準にして周面封止樹脂２０を精度よく位置決めすることができる。また、周面封止樹脂２０を順次積み重ねて形成するときに、樹脂が発光エリア１３Ａ内に流れることを内壁部２１で防ぐことができ、製品の歩留を向上させることができる。   According to the above manufacturing method, by forming the peripheral surface sealing resin 20 after forming the inner wall portion 21, the peripheral surface sealing resin 20 can be accurately positioned with reference to the inner wall portion 21. In addition, when the peripheral surface sealing resin 20 is sequentially stacked and formed, the inner wall portion 21 can prevent the resin from flowing into the light emitting area 13A, and the yield of the product can be improved.

次に、第１の実施形態に係る発光装置１を例に、パターン封止樹脂７と枠状樹脂８を同時に形成すると共に、パターン封止樹脂７の上面を傾斜した状態で形成する製造方法を図１９乃至図２４に基づいて説明する。図１９に示すように、基板２に発光素子３を実装した後、図２０に示すように、基板２上の配線パターン４，５の外周にマスク部材２２を取り付ける。   Next, using the light emitting device 1 according to the first embodiment as an example, the pattern sealing resin 7 and the frame resin 8 are simultaneously formed, and the upper surface of the pattern sealing resin 7 is formed in an inclined state. This will be described based on FIG. 19 to FIG. After the light emitting element 3 is mounted on the substrate 2 as shown in FIG. 19, the mask member 22 is attached to the outer periphery of the wiring patterns 4 and 5 on the substrate 2 as shown in FIG.

ここで、図２１に示すように、光を反射拡散する散乱剤粒子をエポキシ樹脂、シリコン樹脂等に混入した樹脂２４で配線パターン４，５を覆う。このときに混入される散乱剤粒子は、その粒子径がμｍオーダーの大きさのものを用いている。そして、図２２に示すように、樹脂２４が硬化する前に、基板２の中央に垂直な軸を回転軸２３として基板２を回転させる。   Here, as shown in FIG. 21, the wiring patterns 4 and 5 are covered with a resin 24 in which scatterer particles that reflect and diffuse light are mixed in an epoxy resin, a silicone resin or the like. As the scattering agent particles mixed at this time, those having a particle size in the order of μm are used. Then, as shown in FIG. 22, before the resin 24 is cured, the substrate 2 is rotated with an axis perpendicular to the center of the substrate 2 as the rotation axis 23.

上記スピンコートを施すと、図２３に示すように、樹脂２４は遠心力によりその上面が内側から外側に向かってせり上がるように形成される。また、このときに、散乱剤粒子が樹脂２４の下部に沈殿して高濃度となることで光を反射するパターン封止樹脂７が形成され、樹脂２４の上部の散乱剤粒子が低濃度となることで透明な枠状樹脂８が形成される。この結果、樹脂２４内で分離したパターン封止樹脂７の上面も内側から外側に向かってせり上がるように形成される。   When the spin coating is applied, as shown in FIG. 23, the resin 24 is formed so that its upper surface is lifted from the inside to the outside by the centrifugal force. Further, at this time, the scattering agent particles are precipitated in the lower part of the resin 24 to become high concentration, thereby forming the pattern sealing resin 7 which reflects light, and the scattering agent particles in the upper part of the resin 24 become low concentration. Thus, a transparent frame-shaped resin 8 is formed. As a result, the upper surface of the pattern sealing resin 7 separated in the resin 24 is also formed to rise from the inside to the outside.

その後、図２４に示すように、マスク部材２２を取り除き、枠状樹脂８の内側に封止樹脂９を充填する。   Thereafter, as shown in FIG. 24, the mask member 22 is removed, and the inside of the frame-like resin 8 is filled with the sealing resin 9.

上記製造方法のように、比較的大きい散乱剤粒子を混入することで、樹脂２４の下部にその粒子を沈殿させて上下に分離し、パターン封止樹脂７と枠状樹脂８を一括して形成することができる。また、スピンコートを施すことで、パターン封止樹脂７の上面を容易に傾斜させることができる。   As in the above manufacturing method, by mixing relatively large scattering agent particles, the particles are precipitated in the lower part of the resin 24 and separated vertically, and the pattern sealing resin 7 and the frame-like resin 8 are collectively formed. can do. Moreover, the top surface of the pattern sealing resin 7 can be easily inclined by spin coating.

なお、パターン封止樹脂と枠状樹脂を一括して形成する工程は、第２の実施形態における発光装置１１にも適用可能であり、周面封止樹脂２０と共にパターン封止樹脂１７を形成せずに、枠状樹脂１８と共にパターン封止樹脂１７を形成すればよい。   The step of collectively forming the pattern sealing resin and the frame-like resin is applicable to the light emitting device 11 in the second embodiment, and the pattern sealing resin 17 is formed together with the peripheral surface sealing resin 20. Instead, the pattern sealing resin 17 may be formed together with the frame-shaped resin 18.

次に、第１の実施形態に係る発光装置１を例に、パターン封止樹脂７と枠状樹脂８を複数の樹脂層で形成する製造方法を図２５乃至図２８に基づいて説明する。図２５に示すように、基板２に発光素子３を実装した後に、配線パターン４，５の上に第１の樹脂層２５を環状に形成して配線パターン４，５を覆う。その後、図２６に示すように、第１の樹脂層２５よりもわずかに径が大きくなるように第２の樹脂層２６を第１の樹脂層２５の上に環状に形成する。そして、図２７に示すように、第２の樹脂層２６よりも更に径が大きくなるように第３の樹脂層２７を第２の樹脂層２６の上に環状に形成し、図２８に示すように、第３の樹脂層２７よりも径が大きくなるように第４の樹脂層２８を第３の樹脂層２７の上に環状に形成する。   Next, with the light emitting device 1 according to the first embodiment as an example, a manufacturing method for forming the pattern sealing resin 7 and the frame-shaped resin 8 with a plurality of resin layers will be described based on FIGS. As shown in FIG. 25, after the light emitting element 3 is mounted on the substrate 2, the first resin layer 25 is annularly formed on the wiring patterns 4 and 5 to cover the wiring patterns 4 and 5. Thereafter, as shown in FIG. 26, the second resin layer 26 is annularly formed on the first resin layer 25 so that the diameter is slightly larger than that of the first resin layer 25. Then, as shown in FIG. 27, the third resin layer 27 is annularly formed on the second resin layer 26 so that the diameter is larger than that of the second resin layer 26, as shown in FIG. Then, the fourth resin layer 28 is annularly formed on the third resin layer 27 so that the diameter is larger than that of the third resin layer 27.

このように、第１の樹脂層２５から第４の樹脂層２８を重ねて形成すると、樹脂層を少しずつ形成することで位置や形状を精度よく形成することができ、更に、積み上げられた樹脂層の上面が内側から外側に向かってせり上がるように傾斜して形成することができる。このため、例えば、第１の樹脂層２５と第２の樹脂層２６を光が反射する樹脂で形成すれば、発光素子３からの光を上方へ反射するパターン封止樹脂７を形成することができる。このときに、第３の樹脂層２７及び第４の樹脂層２８を透明な樹脂で形成すれば、光を外方に透過する枠状樹脂８を形成することができる。   As described above, when the first resin layer 25 to the fourth resin layer 28 are formed one on top of the other, by forming the resin layer little by little, the position and the shape can be formed with high accuracy, and furthermore, the stacked resin The upper surface of the layer can be formed to be inclined so as to rise from the inside to the outside. Therefore, for example, when the first resin layer 25 and the second resin layer 26 are formed of a resin that reflects light, the pattern sealing resin 7 that reflects the light from the light emitting element 3 upward can be formed. it can. At this time, if the third resin layer 27 and the fourth resin layer 28 are formed of a transparent resin, it is possible to form the frame-shaped resin 8 which transmits light outward.

なお、樹脂層の数は適宜設定することが可能であり、また、図２８に示すように、上に重ねる樹脂層の幅を小さくすれば、外側に広がることがなく、重ね易くすることができる。   Note that the number of resin layers can be set appropriately, and as shown in FIG. 28, if the width of the resin layer to be overlaid is reduced, the resin layer can be easily overlapped without spreading outside. .

また、第２の実施形態における発光装置１１では、既に周面封止樹脂２０を複数の樹脂層で形成しているが、更に、パターン封止樹脂１７と枠状樹脂１８を上記のように複数の樹脂層で形成することも可能である。   Moreover, in the light emitting device 11 according to the second embodiment, the peripheral surface sealing resin 20 is already formed of a plurality of resin layers, but further, a plurality of the pattern sealing resin 17 and the frame resin 18 are provided as described above. It is also possible to form with a resin layer of

１，１１ 発光装置
２，１２ 基板
３，１３ 発光素子
３Ａ，１３Ａ 発光エリア
４，５，１４，１５ 配線パターン
６，１６ ワイヤー
７，１７ パターン封止樹脂
８，１８ 枠状樹脂
９，１９ 封止樹脂
１２Ａ 金属基板
１２Ｂ 樹脂基板
１２ａ 孔
１２ｂ 内周面
１２ｃ 縁
２０ 周面封止樹脂
２０ａ 内周面封止部
２０ｂ 縁封止部
２１ 内壁部
２２ マスク部材
２３ 回転軸
２４ 樹脂
２５ 第１の樹脂層
２６ 第２の樹脂層
２７ 第３の樹脂層
２８ 第４の樹脂層 DESCRIPTION OF SYMBOLS 1, 11 light-emitting device 2, 12 board | substrate 3, 13 light-emitting element 3A, 13A light-emitting area 4, 5, 14, 15 wiring pattern 6, 16 wire 7, 17 pattern sealing resin 8, 18 frame-like resin 9, 19 sealing Resin 12A metal substrate 12B resin substrate 12a hole 12b inner circumferential surface 12c edge 20 circumferential surface sealing resin 20a inner circumferential surface sealing portion 20b edge sealing portion 21 inner wall portion 22 mask member 23 rotation shaft 24 resin 25 first resin layer 26 second resin layer 27 third resin layer 28 fourth resin layer

Claims (7)

基板と、
該基板上に実装された発光素子と、
前記基板上における前記発光素子が実装されている発光エリアの周囲に設けられた配線パターンと、
光を反射し、前記配線パターンを覆うパターン封止樹脂と、
該パターン封止樹脂上に設けられて前記発光エリアを囲う透明な枠状樹脂と、
該枠状樹脂の内側に設けられて前記発光素子を封止する封止樹脂と、を備え、
前記パターン封止樹脂と枠状樹脂は、光を反射散乱する散乱剤粒子が混入された透明な樹脂により一体形成され、その下部に前記散乱剤粒子が沈殿して高濃度となることで前記パターン封止樹脂が形成され、上部における前記散乱剤粒子が低濃度となることで前記枠状樹脂が形成されていることを特徴とする発光装置。 A substrate,
A light emitting element mounted on the substrate;
A wiring pattern provided on the periphery of a light emitting area on which the light emitting element is mounted;
A pattern sealing resin that reflects light and covers the wiring pattern;
A transparent frame resin provided on the pattern sealing resin and surrounding the light emitting area;
And a sealing resin that is provided inside the frame-like resin to seal the light emitting element.
The pattern sealing resin and the frame-like resin are integrally formed of a transparent resin mixed with scattering agent particles for reflecting and scattering light, and the scattering agent particles are precipitated in the lower portion thereof to become a high concentration, thereby the pattern sealing resin is formed, the light-emitting device comprising that you the scattering agent particles in the upper is the frame-like resin is formed by a low concentration. 金属基板と該金属基板上に固着され発光エリアに対応する部分に孔が設けられた樹脂基板とからなる基板と、
前記樹脂基板の孔内の前記金属基板上に実装された発光素子と、
前記樹脂基板の孔の周囲に設けられた配線パターンと、
光を反射し、前記樹脂基板の孔の縁及び内周面を覆う周面封止樹脂と、
光を反射し、前記配線パターンを覆うパターン封止樹脂と、
該パターン封止樹脂上に設けられて前記発光エリアを囲う透明な枠状樹脂と、
該枠状樹脂の内側に設けられて前記発光素子を封止する封止樹脂と、を備え、
前記パターン封止樹脂と枠状樹脂は、光を反射散乱する散乱剤粒子が混入された透明な樹脂により一体形成され、その下部に前記散乱剤粒子が沈殿して高濃度となることで前記パターン封止樹脂が形成され、上部における前記散乱剤粒子が低濃度となることで前記枠状樹脂が形成されていることを特徴とする発光装置。 A substrate comprising a metal substrate and a resin substrate fixed on the metal substrate and provided with a hole in a portion corresponding to the light emitting area;
A light emitting element mounted on the metal substrate in the hole of the resin substrate;
A wiring pattern provided around the hole of the resin substrate;
A peripheral surface sealing resin that reflects light and covers the edge and the inner peripheral surface of the hole of the resin substrate;
A pattern sealing resin that reflects light and covers the wiring pattern;
A transparent frame resin provided on the pattern sealing resin and surrounding the light emitting area;
And a sealing resin that is provided inside the frame-like resin to seal the light emitting element.
The pattern sealing resin and the frame-like resin are integrally formed of a transparent resin mixed with scattering agent particles for reflecting and scattering light, and the scattering agent particles are precipitated in the lower portion thereof to become a high concentration, thereby the pattern A light emitting device , wherein a sealing resin is formed, and the frame-like resin is formed by the concentration of the scattering agent particles in the upper portion being low . 前記パターン封止樹脂は、その上面が内側から外側に向かってせり上がるように傾斜して設けられている請求項１又は２に記載の発光装置。   The light emitting device according to claim 1 or 2, wherein the pattern sealing resin is provided to be inclined such that the upper surface thereof is lifted from the inner side to the outer side. 前記周面封止樹脂は、前記金属基板の上面から前記樹脂基板の上面に向かってせり上がるように傾斜して設けられている請求項２に記載の発光装置。   The light emitting device according to claim 2, wherein the peripheral surface sealing resin is provided so as to incline from the upper surface of the metal substrate to the upper surface of the resin substrate. 前記周面封止樹脂は、複数の樹脂層により形成されている請求項２に記載の発光装置。   The light emitting device according to claim 2, wherein the peripheral surface sealing resin is formed of a plurality of resin layers. 発光素子が実装される発光エリアの周囲に配線パターンが設けられた基板上に発光素子を実装する工程と、
前記配線パターンの外周を囲うマスク部材を前記基板上に取り付ける工程と、
光を反射散乱する散乱剤粒子が混入された透明な樹脂で前記配線パターンを覆うことで前記発光エリアの周囲を囲い、前記発光エリアの中央に垂直な中心軸を中心として前記基板を回転させるスピンコートを施す工程と、
前記透明な樹脂内の散乱剤粒子が下方に沈殿して上下２層に分離し硬化することで前記配線パターンを封止するパターン封止樹脂とその上に設けられる前記発光エリアを囲う枠状樹脂とを形成する工程と、
前記マスク部材を除去する工程と、
前記枠状樹脂の内側に封止樹脂を充填して前記発光素子を封止する工程と、
からなることを特徴とする発光装置の製造方法。 Mounting the light emitting element on a substrate provided with a wiring pattern around the light emitting area where the light emitting element is mounted;
Attaching a mask member surrounding the outer periphery of the wiring pattern on the substrate;
The light emitting area is surrounded by covering the wiring pattern with a transparent resin mixed with scattering agent particles that scatter and scatter light, and the substrate is rotated around a central axis perpendicular to the center of the light emitting area. A process of applying a coat,
A scattering resin particle in the transparent resin precipitates downward, separates into upper and lower layers, and hardens to seal the wiring pattern by sealing the wiring pattern and a frame-shaped resin surrounding the light emitting area provided thereon And forming the
Removing the mask member;
Filling the sealing resin inside the frame-shaped resin to seal the light emitting element;
A method of manufacturing a light emitting device, comprising: 前記パターン封止樹脂は、スピンコート時にその上面が内側から外側に向かってせり上がるように傾斜して形成されている請求項６に記載の発光装置の製造方法。 The method for manufacturing a light emitting device according to claim 6 , wherein the pattern sealing resin is formed to be inclined such that the upper surface thereof is lifted from the inner side at the time of spin coating.
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JP6683000B2 (en) * 2016-05-09 2020-04-15 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
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JP6809098B2 (en) 2016-09-30 2021-01-06 日亜化学工業株式会社 Manufacturing method of light emitting device
JP6458793B2 (en) 2016-11-21 2019-01-30 日亜化学工業株式会社 Method for manufacturing light emitting device
JP7177327B2 (en) * 2017-04-06 2022-11-24 日亜化学工業株式会社 light emitting device
JP7185157B2 (en) * 2020-12-25 2022-12-07 日亜化学工業株式会社 Light-emitting module and method for manufacturing light-emitting module
WO2023282357A1 (en) 2021-07-08 2023-01-12 シチズン電子株式会社 Light emission device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008041290A (en) * 2006-08-02 2008-02-21 Akita Denshi Systems:Kk Lighting device and manufacturing method therefor
JP5119917B2 (en) * 2007-12-28 2013-01-16 日亜化学工業株式会社 Light emitting device
KR101209759B1 (en) * 2008-03-26 2012-12-06 가부시키가이샤 시마네 덴시 이마후쿠 세이사쿠쇼 Semiconductor light emitting module and method for manufacturing the same
WO2009133870A1 (en) * 2008-04-30 2009-11-05 アルプス電気株式会社 Illuminating apparatus and method for manufacturing the same
US8247827B2 (en) * 2008-09-30 2012-08-21 Bridgelux, Inc. LED phosphor deposition
US8575639B2 (en) * 2011-02-16 2013-11-05 Cree, Inc. Light emitting devices for light emitting diodes (LEDs)
JP5673190B2 (en) * 2011-02-18 2015-02-18 日亜化学工業株式会社 Light emitting device
JP5833850B2 (en) * 2011-07-08 2015-12-16 シチズン電子株式会社 Semiconductor light emitting device and manufacturing method thereof
JP2013118292A (en) * 2011-12-02 2013-06-13 Citizen Electronics Co Ltd Led light-emitting device
US8759847B2 (en) * 2011-12-22 2014-06-24 Bridgelux, Inc. White LED assembly with LED string and intermediate node substrate terminals
JP2013197369A (en) * 2012-03-21 2013-09-30 Rohm Co Ltd Light source device and led lamp
WO2014007240A1 (en) * 2012-07-06 2014-01-09 シャープ株式会社 Light emitting apparatus and method for manufacturing light emitting apparatus
CN102931178A (en) * 2012-07-30 2013-02-13 易美芯光（北京）科技有限公司 Novel light emitting diode (LED) integrated optical source packaging structure
JP6147977B2 (en) * 2012-09-26 2017-06-14 ローム株式会社 LED lighting apparatus and LED unit
JP6102273B2 (en) * 2013-01-18 2017-03-29 日亜化学工業株式会社 Light emitting device and manufacturing method thereof

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