JP6522980B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP6522980B2 JP6522980B2 JP2015029409A JP2015029409A JP6522980B2 JP 6522980 B2 JP6522980 B2 JP 6522980B2 JP 2015029409 A JP2015029409 A JP 2015029409A JP 2015029409 A JP2015029409 A JP 2015029409A JP 6522980 B2 JP6522980 B2 JP 6522980B2
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- pad electrode
- semiconductor device
- rewiring
- pad
- film
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Description
まず、本願発明者が検討している再配線を有する半導体装置について説明する。
図1は、半導体チップ1の一例を示す全体平面図、図2は、図1の破線Xで囲まれた領域の拡大平面図、図3は、図2のA−A線に沿った断面図である。
次に、本実施の形態の半導体装置の製造方法について説明するが、本実施の形態の特徴である再配線の製造方法を中心に説明する。再配線の製造方法は、図3に示した断面に対応している。
以下に、本実施の形態の半導体装置およびその製造方法の主な特徴を説明する。
図12は、前記実施の形態の変形例である半導体装置の要部平面図である。
ng ゲート電極
ns ソース領域
p1、p2、p3 プラグ
Qn nチャネル型MISトランジスタ
1 半導体装置(半導体チップ)
2 p型ウエル
3 素子分離溝
3a 素子分離絶縁膜
4,6,8 層間絶縁膜
5、7、9 配線層(配線、Al配線)
9a パッド
10 表面保護膜
10a パッド開口
11 下地金属膜
12、12d、12G、12S 再配線
121 パッド電極搭載部
122 延長配線部
123 接続部
124 フィン部
12a 銅メッキ膜
12b ニッケルメッキ膜
13 パッド電極
13a ニッケル薄膜
13b 金薄膜
20 ワイヤ
25D ダイパッド部
25L リード
26 封止体
Claims (13)
- 半導体基板と、
前記半導体基板上に形成された複数の配線層と、
前記複数の配線層の最上層に形成されたパッドと、
前記パッド上に開口を有する無機絶縁膜からなる表面保護膜と、
前記表面保護膜上に形成された再配線と、
前記再配線上に形成され、且つ、ワイヤが接続されたパッド電極と、
を有し、
前記再配線は、前記パッド電極が搭載されたパッド電極搭載部と、前記パッドと接続された接続部と、前記パッド電極搭載部と前記接続部とを連結する延長配線部と、第1フィン部と、からなり、
前記パッド電極搭載部において、前記再配線と前記表面保護膜とは互いに接しており、
平面視にて、前記パッド電極搭載部は、2つの短辺と、2つの長辺とを含む長方形であり、
前記2つの短辺または前記2つの長辺の少なくとも一辺には、前記パッド電極搭載部の外側に延在して前記第1フィン部が接続されている、半導体装置。 - 請求項1に記載の半導体装置であって、
前記パッド電極は、前記パッド電極搭載部の上面および側面を覆う、半導体装置。 - 請求項1に記載の半導体装置であって、
前記再配線の膜厚は、前記パッドが形成された最上層配線層の膜厚の5倍以上である、半導体装置。 - 請求項3に記載の半導体装置であって、
前記再配線は、銅膜を含む、半導体装置。 - 請求項1に記載の半導体装置において、
前記第1フィン部は、前記2つの短辺の内の一方の辺に接続されており、
前記延長配線部は、前記2つの短辺のうちの他方の辺に接続されており、
前記延長配線部の配線幅は、前記2つの短辺の長さよりも小さい、半導体装置。 - 請求項1に記載の半導体装置であって、
前記第1フィン部は、前記2つの長辺の内の一方の辺に接続されている、半導体装置。 - 請求項5に記載の半導体装置であって、
前記ワイヤは、前記再配線の上部を、前記パッド電極搭載部から前記接続部に向かって延在している、半導体装置。 - 請求項1に記載の半導体装置であって、
前記表面保護膜は、窒化シリコン膜からなり、
前記パッド電極搭載部において、前記再配線は、前記窒化シリコン膜の上面に接触している、半導体装置。 - 請求項1に記載の半導体装置であって、
前記パッド電極は、金膜を含み、
前記ワイヤは、前記パッド電極上に形成され、且つ、前記金膜に接続されている、半導体装置。 - (a)複数の配線層と、前記複数の配線層の最上層に形成されたパッドとを有する半導体基板を準備する工程、
(b)前記パッド上に開口を有する無機絶縁膜からなる表面保護膜を形成する工程、
(c)前記表面保護膜上に、前記開口を介して前記パッドに電気的に接続する再配線を形成する工程、
(d)前記再配線上に、パッド電極を形成する工程、
(e)ワイヤの先端にボールを形成し、前記ボールに第1方向の超音波振動を印加しながら、前記ボールを前記パッド電極に接続する工程、
を有し、
前記再配線は、前記パッド電極が搭載されたパッド電極搭載部と、前記パッドと接続された接続部と、前記パッド電極搭載部と前記接続部とを連結する延長配線部と、第1フィン部と、からなり、
前記パッド電極搭載部において、前記再配線と前記表面保護膜とは互いに接しており、
前記パッド電極搭載部は、2つの短辺と、2つの長辺とを含む長方形であり、
前記2つの短辺または前記2つの長辺の少なくとも一辺には、前記パッド電極搭載部の外側に延在して前記第1フィン部が接続されている、半導体装置の製造方法。 - 請求項10に記載の半導体装置の製造方法において、
前記第1方向は、前記2つの長辺に沿う方向である、半導体装置の製造方法。 - 請求項11に記載の半導体装置の製造方法において、
前記パッド電極は、前記パッド電極搭載部の表面を覆い、前記パッド電極搭載部の側壁に延在する、半導体装置の製造方法。 - 請求項10に記載の半導体装置の製造方法において、
前記第1方向は、前記2つの短辺に沿う方向である、半導体装置の製造方法。
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