JP6484051B2 - 検査方法及び検査装置 - Google Patents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/24—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices
- G01R15/245—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices using magneto-optical modulators, e.g. based on the Faraday or Cotton-Mouton effect
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G01N29/44—Processing the detected response signal, e.g. electronic circuits specially adapted therefor
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- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/44—Processing the detected response signal, e.g. electronic circuits specially adapted therefor
- G01N29/48—Processing the detected response signal, e.g. electronic circuits specially adapted therefor by amplitude comparison
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- G—PHYSICS
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- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
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- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/62—Optical apparatus specially adapted for adjusting optical elements during the assembly of optical systems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
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Description
Claims (14)
- 半導体デバイスに対して刺激信号を印加することにより前記半導体デバイスに生じる電流の経路を取得する検査方法であって、
前記半導体デバイスに刺激信号を印加するステップと、
前記半導体デバイスに対向して配置された磁気光学結晶に対して光を照射するステップと、
照射された前記光に応じて前記磁気光学結晶から反射された光を検出し、検出信号を出力するステップと、
前記刺激信号に基づいて生成される参照信号と前記検出信号との位相差に基づいて、前記位相差を示す位相成分を含んだ位相画像データを生成するステップと、
前記位相画像データに基づいて、前記電流の経路を示す画像を生成するステップと、を含み、
前記電流の経路を示す画像を生成するステップは、前記位相画像データに基づいて、前記位相成分の統計値を示す統計値画像データを生成するステップを含み、前記統計値画像データに基づいて前記電流の経路を示す画像を生成する、検査方法。 - 前記電流の経路を示す画像を生成するステップは、前記位相画像データに基づいて、正弦成分を示す正弦画像データ、及び、余弦成分を示す余弦画像データを生成するステップを含み、前記正弦画像データ及び前記余弦画像データに基づいて、前記電流の経路を示す画像を生成する、請求項1記載の検査方法。
- 前記電流の経路を示す画像を生成するステップは、前記正弦画像データ及び前記余弦画像データに対して、加算、乗算、及び二乗和平方根のいずれか1つの演算を行うステップを含む、請求項2記載の検査方法。
- 前記電流の経路を示す画像を生成するステップは、前記正弦画像データに基づいて、前記正弦成分の統計値を示す正弦統計値画像データを生成するステップと、前記余弦画像データに基づいて、前記余弦成分の統計値を示す余弦統計値画像データを生成するステップと、を含み、前記正弦統計値画像データ及び前記余弦統計値画像データに基づいて前記電流の経路を示す画像を生成する、請求項2または請求項3記載の検査方法。
- 前記統計値は、分散、歪度、及び尖度のうちいずれか1つである、請求項1〜4のいずれか一項記載の検査方法。
- 前記参照信号は、前記刺激信号と位相及び周期が等しい信号である、請求項1〜5のいずれか一項記載の検査方法。
- 半導体デバイスに対して刺激信号を印加することにより前記半導体デバイスに生じる電流の経路を取得する検査装置であって、
前記半導体デバイスに刺激信号を印加する信号印加部と、
前記半導体デバイスに対向して配置される磁気光学結晶と、
光を出力する光源と、
前記光源から出力された光を前記磁気光学結晶に対して照射する照射光学系と、
前記照射光学系に照射された光に応じて前記磁気光学結晶から反射された光を検出し、検出信号を出力する光検出器と、
前記刺激信号に基づいて生成される参照信号と前記検出信号との位相差に基づいて、前記位相差を示す位相成分を含んだ位相画像データを生成する解析部と、
前記位相画像データに基づいて、前記電流の経路を示す画像を生成する、電流経路画像生成部と、を備え、
前記電流経路画像生成部は、前記位相画像データに基づいて、前記位相成分の統計値を示す統計値画像データを生成し、前記統計値画像データに基づいて前記電流の経路を示す画像を生成する検査装置。 - 前記電流経路画像生成部は、前記位相画像データに基づいて、正弦成分を示す正弦画像データ、及び、余弦成分を示す余弦画像データを生成し、前記正弦画像データ及び前記余弦画像データに基づいて、前記電流の経路を示す画像を生成する、請求項7記載の検査装置。
- 前記電流経路画像生成部は、前記正弦画像データ及び前記余弦画像データに対して、加算、乗算、及び二乗和平方根のいずれか1つの演算を行う、請求項8記載の検査装置。
- 前記電流経路画像生成部は、前記正弦画像データに基づいて、前記正弦成分の統計値を示す正弦統計値画像データを生成し、前記余弦画像データに基づいて、前記余弦成分の統計値を示す余弦統計値画像データを生成し、前記正弦統計値画像データ及び前記余弦統計値画像データに基づいて前記電流の経路を示す画像を生成する、請求項8又は9記載の検査装置。
- 前記統計値は、分散、歪度、及び尖度のうちいずれか1つである、請求項7〜10のいずれか一項記載の検査装置。
- 前記参照信号は、前記信号印加部から出力される、請求項7〜11のいずれか一項記載の検査装置。
- 前記参照信号は、前記半導体デバイスから出力される、請求項7〜11のいずれか一項記載の検査装置。
- 前記参照信号は、前記刺激信号と位相及び周期が等しい信号である、請求項7〜13のいずれか一項記載の検査装置。
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JP2015024585A JP6484051B2 (ja) | 2015-02-10 | 2015-02-10 | 検査方法及び検査装置 |
DE112016000683.7T DE112016000683T5 (de) | 2015-02-10 | 2016-02-02 | Inspektionsverfahren und Inspektionsvorrichtung |
CN201680009523.XA CN107250786B (zh) | 2015-02-10 | 2016-02-02 | 检查方法及检查装置 |
KR1020177022836A KR102345896B1 (ko) | 2015-02-10 | 2016-02-02 | 검사 방법 및 검사 장치 |
US15/548,860 US10698006B2 (en) | 2015-02-10 | 2016-02-02 | Inspection method and inspection apparatus |
PCT/JP2016/053088 WO2016129458A1 (ja) | 2015-02-10 | 2016-02-02 | 検査方法及び検査装置 |
TW105104173A TWI679415B (zh) | 2015-02-10 | 2016-02-05 | 檢查方法及檢查裝置 |
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JP5744353B2 (ja) | 2013-02-01 | 2015-07-08 | 浜松ホトニクス株式会社 | 半導体デバイス検査装置及び半導体デバイス検査方法 |
JP6632327B2 (ja) * | 2015-10-30 | 2020-01-22 | 浜松ホトニクス株式会社 | 画像生成方法、画像生成装置、画像生成プログラム及び記録媒体 |
JP6714485B2 (ja) | 2016-09-28 | 2020-06-24 | 浜松ホトニクス株式会社 | 半導体デバイス検査方法及び半導体デバイス検査装置 |
CN109003567A (zh) * | 2018-07-24 | 2018-12-14 | 深圳市华星光电半导体显示技术有限公司 | Tft阵列基板测试装置及测试方法 |
US11650167B2 (en) * | 2020-12-17 | 2023-05-16 | Seagate Technology Llc | Abnormal surface pattern detection for production line defect remediation |
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JPH0820421B2 (ja) | 1989-03-27 | 1996-03-04 | 住友金属工業株式会社 | 探傷方法及び探傷装置 |
US5451863A (en) * | 1992-10-30 | 1995-09-19 | International Business Machines Corporation | Fiber optic probe with a magneto-optic film on an end surface for detecting a current in an integrated circuit |
JPH06201654A (ja) | 1992-12-26 | 1994-07-22 | Sumitomo Metal Ind Ltd | 磁気光学探傷方法及びその装置 |
US6141093A (en) * | 1998-08-25 | 2000-10-31 | International Business Machines Corporation | Method and apparatus for locating power plane shorts using polarized light microscopy |
JP2001343434A (ja) * | 2000-05-31 | 2001-12-14 | Ando Electric Co Ltd | 半導体試験装置 |
FR2856791B1 (fr) * | 2003-06-27 | 2005-11-04 | Centre Nat Rech Scient | Procede et dispositif d'imagerie magneto-optique |
JP4061289B2 (ja) | 2004-04-27 | 2008-03-12 | 独立行政法人科学技術振興機構 | 画像検査方法及び装置 |
TWI302751B (en) | 2006-06-14 | 2008-11-01 | Macronix Int Co Ltd | Nonvolatile memory cell, mixed nonvolatile memory array and method for operation thereof |
JP2009008626A (ja) * | 2007-06-29 | 2009-01-15 | Nec Electronics Corp | 故障解析方法及び故障解析装置 |
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US9513230B2 (en) | 2012-12-14 | 2016-12-06 | Kla-Tencor Corporation | Apparatus and method for optical inspection, magnetic field and height mapping |
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KR102345896B1 (ko) | 2022-01-03 |
CN107250786A (zh) | 2017-10-13 |
TWI679415B (zh) | 2019-12-11 |
CN107250786B (zh) | 2021-06-29 |
US20180031614A1 (en) | 2018-02-01 |
WO2016129458A1 (ja) | 2016-08-18 |
US10698006B2 (en) | 2020-06-30 |
DE112016000683T5 (de) | 2017-11-09 |
TW201640098A (zh) | 2016-11-16 |
KR20170110630A (ko) | 2017-10-11 |
JP2016148553A (ja) | 2016-08-18 |
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