JP6468468B2 - 圧電薄膜及び圧電振動子 - Google Patents
圧電薄膜及び圧電振動子 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 68
- 239000013078 crystal Substances 0.000 claims description 21
- 150000002500 ions Chemical class 0.000 claims description 11
- 229910021478 group 5 element Inorganic materials 0.000 claims description 9
- 229910001849 group 12 element Inorganic materials 0.000 claims description 7
- 229910021480 group 4 element Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 150000001768 cations Chemical class 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 description 37
- 239000000758 substrate Substances 0.000 description 27
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 21
- 239000011777 magnesium Substances 0.000 description 19
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 239000010955 niobium Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 229910052706 scandium Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 238000012795 verification Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- FHKPLLOSJHHKNU-INIZCTEOSA-N [(3S)-3-[8-(1-ethyl-5-methylpyrazol-4-yl)-9-methylpurin-6-yl]oxypyrrolidin-1-yl]-(oxan-4-yl)methanone Chemical compound C(C)N1N=CC(=C1C)C=1N(C2=NC=NC(=C2N=1)O[C@@H]1CN(CC1)C(=O)C1CCOCC1)C FHKPLLOSJHHKNU-INIZCTEOSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000000095 laser ablation inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- H03H9/02244—Details of microelectro-mechanical resonators
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- H03H9/05—Holders; Supports
- H03H9/0595—Holders; Supports the holder support and resonator being formed in one body
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2468—Tuning fork resonators
- H03H9/2478—Single-Ended Tuning Fork resonators
- H03H9/2489—Single-Ended Tuning Fork resonators with more than two fork tines
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- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
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- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
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- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
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- H03H9/02—Details
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
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- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
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Description
本実施形態では、第1元素として第2族元素のMg(価数 2、配位数 4、イオン半径 0.5nm)及び第5族元素のNb(価数 4、配位数 8、イオン半径 0.79nm)の両方を選択し、第2元素としてFe(価数 3、配位数4、イオン半径 0.49nm)を選択している。
なお、効果の検証方法については第1の実施形態と同様である。
本実施形態では、第1元素として第2族元素のMg(価数 2、配位数 4、イオン半径 0.5nm)及び第5族元素のHf(価数 4、配位数 8、イオン半径 0.83nm)の両方を選択し、第2元素としてFe(価数 3、配位数4、イオン半径 0.49nm)を選択している。
なお、効果の検証方法については第1の実施形態と同様である。
23 圧電薄膜
24 電極(下側電極)
25 電極(上側電極)
33 圧電振動子
43 圧電薄膜
44 電極(下側電極)
45 電極(上側電極)
Claims (6)
- AlN結晶と、
前記AlN結晶においてAlと置き換えられる少なくとも1つの第1元素と、
前記第1元素のイオン半径よりも小さく、かつ、Alのイオン半径よりも大きなイオン半径を有し、前記AlN結晶に添加される第2元素と、を含有し、
前記第1元素が、第3族元素、又は、第2族元素及び第4族元素、又は、第2族元素及び第5族元素、又は、第12族元素及び第4族元素、又は、第12族元素及び第5族元素である、圧電薄膜。 - 前記第1元素がScであり、前記圧電薄膜における前記Alの原子数と前記Scの原子数との総量に対して、前記Scの原子数が占める割合は0.03以上0.50以下である、請求項1に記載の圧電薄膜。
- AlN結晶と、
前記AlN結晶においてAlと置き換えられる少なくとも1つの第1元素と、
前記第1元素のイオン半径よりも小さく、かつ、Alのイオン半径よりも大きなイオン半径を有し、前記AlN結晶に添加される第2元素と、を含有し、
前記第2元素が、3価陽イオンとして存在している、圧電薄膜。 - 前記第2元素が、W、Zr、Fe、Ta、Cr、Ti及びNiのうちから選択された少なくとも1つの元素である、請求項1〜3のいずれか1項に記載の圧電薄膜。
- AlN結晶と、
前記AlN結晶においてAlと置き換えられる少なくとも1つの第1元素と、
前記第1元素のイオン半径よりも小さく、かつ、Alのイオン半径よりも大きなイオン半径を有し、前記AlN結晶に添加される第2元素と、を含有し、
前記圧電薄膜における前記Alの原子数と前記第1元素の原子数との総量に対する、前記第2元素の原子数の比率は0.01at%以上1.00at%以下である、圧電薄膜。 - 圧電薄膜と、
前記圧電薄膜を挟み込む1対の電極と、を備え、
前記圧電薄膜は、
AlN結晶と、
前記AlN結晶においてAlと置き換えられる少なくとも1つの第1元素と、
前記第1元素のイオン半径よりも小さく、かつ、Alのイオン半径よりも大きなイオン半径を有し、前記AlN結晶に添加される第2元素と、を含有し、
前記第1元素が、第3族元素、又は、第2族元素及び第4族元素、又は、第2族元素及び第5族元素、又は、第12族元素及び第4族元素、又は、第12族元素及び第5族元素である、圧電振動子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015001098 | 2015-01-06 | ||
JP2015001098 | 2015-01-06 | ||
PCT/JP2016/050092 WO2016111280A1 (ja) | 2015-01-06 | 2016-01-05 | 圧電薄膜及び圧電振動子 |
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JP6132022B2 (ja) * | 2013-08-21 | 2017-05-24 | 株式会社村田製作所 | 圧電共振子及びその製造方法 |
EP3444947B1 (en) * | 2016-05-26 | 2023-03-22 | Murata Manufacturing Co., Ltd. | Resonator and resonance device |
KR102066960B1 (ko) * | 2016-08-03 | 2020-01-16 | 삼성전기주식회사 | 박막 벌크 음향 공진기 및 이를 포함하는 필터 |
JP7298994B2 (ja) * | 2017-06-23 | 2023-06-27 | 太陽誘電株式会社 | 窒化アルミニウム膜、弾性波デバイス、フィルタおよびマルチプレクサ |
KR102461739B1 (ko) * | 2017-07-07 | 2022-10-31 | 스카이워크스 솔루션즈, 인코포레이티드 | 개선된 음향파 필터들을 위해 치환된 알루미늄 질화물 |
JP7151096B2 (ja) | 2018-02-21 | 2022-10-12 | 株式会社デンソー | 圧電膜、その製造方法、圧電膜積層体、その製造方法 |
JP6994247B2 (ja) * | 2018-03-23 | 2022-02-04 | 国立大学法人東北大学 | 圧電体薄膜、圧電素子および圧電発電装置 |
CN113226982B (zh) * | 2019-02-22 | 2023-08-18 | 国立研究开发法人产业技术综合研究所 | 氮化物压电体及使用其的mems器件 |
JP7329828B2 (ja) * | 2019-09-02 | 2023-08-21 | 国立研究開発法人産業技術総合研究所 | 窒化物圧電体およびそれを用いたmemsデバイス |
JP7425960B2 (ja) | 2019-10-29 | 2024-02-01 | Tdk株式会社 | 圧電薄膜素子 |
CN113755804B (zh) * | 2021-08-13 | 2023-09-12 | 中国电子科技集团公司第五十五研究所 | 一种近零应力掺钪氮化铝薄膜制备方法 |
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JP4548171B2 (ja) | 2005-03-24 | 2010-09-22 | ソニー株式会社 | 圧電共振素子およびその製造方法 |
JP5190841B2 (ja) * | 2007-05-31 | 2013-04-24 | 独立行政法人産業技術総合研究所 | 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー |
DE102008025691B4 (de) | 2007-05-31 | 2011-08-25 | National Institute Of Advanced Industrial Science And Technology | Piezoelektrischer Dünnfilm, piezoelektrisches Material und Herstellungsverfahren für piezoelektrischen Dünnfilm |
JP5843198B2 (ja) * | 2012-01-23 | 2016-01-13 | 国立研究開発法人産業技術総合研究所 | 圧電素子およびその製造方法、ならびに圧電センサ |
JP5904591B2 (ja) | 2012-03-15 | 2016-04-13 | 太陽誘電株式会社 | 弾性波デバイス |
US9337799B2 (en) * | 2012-11-02 | 2016-05-10 | Qualcomm Mems Technologies, Inc. | Selective tuning of acoustic devices |
JP5957376B2 (ja) * | 2012-12-18 | 2016-07-27 | 太陽誘電株式会社 | 圧電薄膜共振子 |
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WO2016111280A1 (ja) | 2016-07-14 |
CN107112977B (zh) | 2020-07-14 |
US10965270B2 (en) | 2021-03-30 |
JPWO2016111280A1 (ja) | 2017-08-17 |
SG11201705362YA (en) | 2017-08-30 |
US20170294894A1 (en) | 2017-10-12 |
CN107112977A (zh) | 2017-08-29 |
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