JP6441021B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6441021B2 JP6441021B2 JP2014213457A JP2014213457A JP6441021B2 JP 6441021 B2 JP6441021 B2 JP 6441021B2 JP 2014213457 A JP2014213457 A JP 2014213457A JP 2014213457 A JP2014213457 A JP 2014213457A JP 6441021 B2 JP6441021 B2 JP 6441021B2
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- Prior art keywords
- film
- transistor
- oxide semiconductor
- insulating film
- semiconductor film
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- 239000004065 semiconductor Substances 0.000 title claims description 601
- 239000000758 substrate Substances 0.000 claims description 96
- 229910052739 hydrogen Inorganic materials 0.000 claims description 88
- 229910052760 oxygen Inorganic materials 0.000 claims description 88
- 239000001257 hydrogen Substances 0.000 claims description 87
- 239000001301 oxygen Substances 0.000 claims description 85
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 84
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 82
- 239000003990 capacitor Substances 0.000 claims description 71
- 230000004888 barrier function Effects 0.000 claims description 60
- 238000003795 desorption Methods 0.000 claims description 43
- 239000007789 gas Substances 0.000 claims description 26
- 238000004458 analytical method Methods 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 22
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 16
- 238000004611 spectroscopical analysis Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 description 211
- 239000010410 layer Substances 0.000 description 174
- 239000008188 pellet Substances 0.000 description 123
- 239000000523 sample Substances 0.000 description 103
- 239000013078 crystal Substances 0.000 description 87
- 238000010438 heat treatment Methods 0.000 description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 75
- 229910052710 silicon Inorganic materials 0.000 description 75
- 239000010703 silicon Substances 0.000 description 75
- 230000015572 biosynthetic process Effects 0.000 description 66
- 238000005259 measurement Methods 0.000 description 61
- 230000006870 function Effects 0.000 description 54
- 125000004429 atom Chemical group 0.000 description 52
- 238000000231 atomic layer deposition Methods 0.000 description 45
- 238000004544 sputter deposition Methods 0.000 description 39
- 239000011701 zinc Substances 0.000 description 38
- 239000012535 impurity Substances 0.000 description 34
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 31
- 238000005229 chemical vapour deposition Methods 0.000 description 30
- 238000004519 manufacturing process Methods 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 26
- 229910052814 silicon oxide Inorganic materials 0.000 description 25
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 24
- 238000011282 treatment Methods 0.000 description 24
- 239000004973 liquid crystal related substance Substances 0.000 description 23
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 23
- 238000006356 dehydrogenation reaction Methods 0.000 description 22
- 238000004549 pulsed laser deposition Methods 0.000 description 22
- 230000002829 reductive effect Effects 0.000 description 20
- 238000001451 molecular beam epitaxy Methods 0.000 description 19
- 239000012299 nitrogen atmosphere Substances 0.000 description 19
- 229910000449 hafnium oxide Inorganic materials 0.000 description 18
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 18
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 18
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 18
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 18
- 229910052738 indium Inorganic materials 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- 230000008859 change Effects 0.000 description 16
- 230000007547 defect Effects 0.000 description 16
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 15
- 229910052721 tungsten Inorganic materials 0.000 description 15
- 239000010937 tungsten Substances 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- -1 oxygen cations Chemical class 0.000 description 13
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 13
- 230000014759 maintenance of location Effects 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 238000003860 storage Methods 0.000 description 12
- 229910052725 zinc Inorganic materials 0.000 description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 229910052796 boron Inorganic materials 0.000 description 10
- 239000012212 insulator Substances 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 9
- 238000004891 communication Methods 0.000 description 9
- 238000011109 contamination Methods 0.000 description 9
- 238000002003 electron diffraction Methods 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 239000002159 nanocrystal Substances 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 8
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 8
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 8
- 125000004430 oxygen atom Chemical group O* 0.000 description 8
- 238000012916 structural analysis Methods 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 8
- 229910007541 Zn O Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 150000002431 hydrogen Chemical class 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- 239000011800 void material Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 229910052727 yttrium Inorganic materials 0.000 description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 230000009471 action Effects 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 230000018044 dehydration Effects 0.000 description 5
- 238000006297 dehydration reaction Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 229910001195 gallium oxide Inorganic materials 0.000 description 5
- 238000010030 laminating Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 206010021143 Hypoxia Diseases 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005728 strengthening Methods 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
- 238000013213 extrapolation Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 239000011449 brick Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000002524 electron diffraction data Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 235000013305 food Nutrition 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000005524 hole trap Effects 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000001364 causal effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229940127554 medical product Drugs 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
- H01L21/4757—After-treatment
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8221—Three dimensional integrated circuits stacked in different levels
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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Description
本実施の形態では、本発明の一態様である半導体装置の構成および作製方法について図面を参照して説明する。
図1(A)は、本発明の一態様に係る半導体装置の回路図の一例である。図1(A)に示す半導体装置は、トランジスタ100と、トランジスタ200と、容量素子250と、配線SLと、配線BLと、配線WLと、配線CLと、を有する。
以下では、酸化物半導体膜の構造について説明する。
まずは、CAAC−OS膜について説明する。なお、CAAC−OS膜を、CANC(C−Axis Aligned nanocrystals)を有する酸化物半導体膜と呼ぶこともできる。
次に、微結晶酸化物半導体膜について説明する。
次に、非晶質酸化物半導体膜について説明する。
なお、酸化物半導体膜は、nc−OS膜と非晶質酸化物半導体膜との間の構造を有する場合がある。そのような構造を有する酸化物半導体膜を、特に非晶質ライク酸化物半導体(a−like OS:amorphous−like Oxide Semiconductor)膜と呼ぶ。
以下では、CAAC−OS膜およびnc−OS膜の成膜モデルの一例について説明する。
図2(B)は、図1(B)に示した半導体装置を変形した例である。
また、トランジスタ200は、トップゲートトップコンタクト構造のトランジスタに限られず、図3(A)に示すようにトップゲートボトムコンタクト構造のトランジスタでもよいし、図3(B)に示すようにボトムゲートトップコンタクト構造のトランジスタでもよい。
また、図4(A)に示すように、トランジスタ100とトランジスタ200の間の絶縁膜や導電膜を減らしてもよい。図4(A)に示す半導体装置は、図1(B)に示す半導体装置の導電膜173、導電膜173と同一工程で形成される導電膜、当該導電膜上の絶縁膜がない構成になっている。
また、図5に示すような半導体装置の構成にしてもよい。なお、一点鎖線の左側にはトランジスタ100、トランジスタ200におけるチャネル長方向(長手方向または長辺方向ともいう。)の断面図を示し、一点鎖線の右側にはトランジスタ100、トランジスタ200におけるチャネル幅方向(短手方向または短辺方向ともいう。)の断面図を示す。
本実施の形態では、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置(記憶装置)について図1を用いて説明する。
本実施の形態では、先の実施の形態で説明したトランジスタ、または記憶装置を含むRFタグについて、図21を参照して説明する。
本実施の形態では、少なくとも実施の形態で説明したトランジスタを用いることができ、先の実施の形態で説明した記憶装置を含むCPUについて説明する。
本実施の形態では、本発明の一態様の表示装置の構成例について説明する。
図24(A)は、本発明の一態様の表示装置の上面図であり、図24(B)は、本発明の一態様の表示装置の画素に液晶素子を適用する場合に用いることができる画素回路を説明するための回路図である。また、図24(C)は、本発明の一態様の表示装置の画素に有機EL素子を適用する場合に用いることができる画素回路を説明するための回路図である。
また、画素の回路構成の一例を図24(B)に示す。ここでは、VA型液晶表示装置の画素に適用することができる画素回路を示す。
画素の回路構成の他の一例を図24(C)に示す。ここでは、有機EL素子を用いた表示装置の画素構造を示す。
本実施の形態では、本発明の一態様の半導体装置を適用した表示モジュールについて、図25を用いて説明を行う。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図26に示す。
本実施の形態では、本発明の一態様に係るRFデバイスの使用例について図27を用いながら説明する。RFデバイスの用途は広範にわたるが、例えば、紙幣、硬貨、有価証券類、無記名債券類、証書類(運転免許証や住民票等、図27(A)参照)、包装用容器類(包装紙やボトル等、図27(C)参照)、記録媒体(DVDやビデオテープ等、図27(B)参照)、乗り物類(自転車等、図27(D)参照)、身の回り品(鞄や眼鏡等)、食品類、植物類、動物類、人体、衣類、生活用品類、薬品や薬剤を含む医療品、または電子機器(液晶表示装置、EL表示装置、テレビジョン装置、または携帯電話)等の物品、若しくは各物品に取り付ける荷札(図27(E)、図27(F)参照)等に設けて使用することができる。
以下に、試料の作製方法を説明する。
次に、作製した試料1および試料2に含まれる単結晶シリコンを用いたトランジスタ、および酸化物半導体を用いたトランジスタの電気特性を測定した。
以下に試料3および試料4の作製方法を示す。
次に、試料3および試料4のVg−Id特性を測定した。Vg−Id特性の測定は、実施例2に示した構造1に対して行った。また、Vg−Id特性の測定は、室温(25℃)または85℃において、ドレイン電圧(Vd)を1.8Vとし、ゲート電圧(Vg)を−3Vから、0.1V間隔で3Vまで掃引したときの、ドレイン電流(Id)を測定することで行った。この測定を、第2のゲート電極である導電膜220に印加する電圧(Vbgと表記する。)を0Vから−20Vの範囲で変化させて複数回行った。なお、トランジスタは、設計値がチャネル長0.8μm、チャネル幅0.8μmのものを用いた。また、126.6mm角の基板内に均等に配置した13個のトランジスタに対して測定を行った。
以下に評価に用いた試料5について説明する。
次に、上記で作製した試料5のオフ電流の測定方法及びその結果について、図37乃至図40を用いて説明する。
図37に示す測定系は、容量素子400、トランジスタ401、トランジスタ402、トランジスタ403、及びトランジスタ404を有する。ここで、トランジスタ403は電荷注入用のトランジスタであり、トランジスタ404はリーク電流の評価用のトランジスタである。トランジスタ401及びトランジスタ402で出力回路406を構成する。また、トランジスタ403のソース端子(またはドレイン端子)と、トランジスタ404のドレイン端子(またはソース端子)と、容量素子400の第1端子と、トランジスタ401のゲート端子との接続部をノードAとする。
次に、上記の測定系を用いた電流測定方法の一例について図38を参照して説明する。
<参考例>
150 半導体基板
160 絶縁膜
162 絶縁膜
164 導電膜
166 不純物領域
170 絶縁膜
171 バリア膜
172 絶縁膜
173 導電膜
174 導電膜
175 ボイド
176 絶縁膜
200 トランジスタ
204 導電膜
205 導電膜
206 酸化物半導体膜
206a 酸化物半導体膜
206b 酸化物半導体膜
206c 酸化物半導体膜
212 ゲート絶縁膜
213 絶縁膜
215 酸化物半導体膜
216a 導電膜
216b 導電膜
218 バリア膜
219 絶縁膜
220 導電膜
250 容量素子
400 容量素子
401 トランジスタ
402 トランジスタ
403 トランジスタ
404 トランジスタ
406 出力回路
700 基板
701 画素部
702 走査線駆動回路
703 走査線駆動回路
704 信号線駆動回路
710 容量配線
712 ゲート配線
713 ゲート配線
714 ドレイン電極層
716 トランジスタ
717 トランジスタ
718 液晶素子
719 液晶素子
720 画素
721 スイッチング用トランジスタ
722 駆動用トランジスタ
723 容量素子
724 発光素子
725 信号線
726 走査線
727 電源線
728 共通電極
800 RFタグ
801 通信器
802 アンテナ
803 無線信号
804 アンテナ
805 整流回路
806 定電圧回路
807 復調回路
808 変調回路
809 論理回路
810 記憶回路
811 ROM
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 筐体
912 筐体
913 表示部
914 表示部
915 接続部
916 操作キー
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 冷蔵室用扉
933 冷凍室用扉
941 筐体
942 筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 車体
952 車輪
953 ダッシュボード
954 ライト
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
1200 記憶素子
1201 回路
1202 回路
1203 スイッチ
1204 スイッチ
1206 論理素子
1207 容量素子
1208 容量素子
1209 トランジスタ
1210 トランジスタ
1213 トランジスタ
1214 トランジスタ
1220 回路
5100 ペレット
5100a ペレット
5100b ペレット
5101 イオン
5102 酸化亜鉛層
5103 粒子
5105a ペレット
5105a1 領域
5105a2 ペレット
5105b ペレット
5105c ペレット
5105d ペレット
5105d1 領域
5105e ペレット
5120 基板
5130 ターゲット
5161 領域
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8007 バックライトユニット
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリー
Claims (13)
- 昇温脱離ガス分光法分析にて検出される、温度に対する質量電荷比2の検出強度が、400℃において4×10−11A以下である第1の絶縁膜と、
前記第1の絶縁膜上の、第1のバリア膜と、
前記第1のバリア膜上の、化学量論的組成を満たす酸素よりも多くの酸素を含む領域を有する第2の絶縁膜と、
前記第2の絶縁膜上の、第1の酸化物半導体膜と、を有することを特徴とする半導体装置。 - 昇温脱離ガス分光法分析における、400℃以上の温度での水素分子の脱離量が300℃での水素分子の脱離量の130%以下である第1の絶縁膜と、
前記第1の絶縁膜上の、第1のバリア膜と、
前記第1のバリア膜上の、化学量論的組成を満たす酸素よりも多くの酸素を含む領域を有する第2の絶縁膜と、
前記第2の絶縁膜上の、第1の酸化物半導体膜と、を有することを特徴とする半導体装置。 - 昇温脱離ガス分光法分析における、450℃での水素分子の脱離量が350℃での水素分子の脱離量の130%以下である第1の絶縁膜と、
前記第1の絶縁膜上の、第1のバリア膜と、
前記第1のバリア膜上の、化学量論的組成を満たす酸素よりも多くの酸素を含む領域を有する第2の絶縁膜と、
前記第2の絶縁膜上の、第1の酸化物半導体膜と、を有することを特徴とする半導体装置。 - 昇温脱離ガス分光法分析における、400℃以上の温度での水素分子の脱離量が300℃での水素分子の脱離量の130%以下である第1の絶縁膜と、
前記第1の絶縁膜上の、第1のバリア膜と、
前記第1のバリア膜上の、化学量論的組成を満たす酸素よりも多くの酸素を含む領域を有する第2の絶縁膜と、
前記第2の絶縁膜上の、第1の酸化物半導体膜と、
前記第1の酸化物半導体膜と電気的に接続されたソース電極と、
前記第1の酸化物半導体膜と電気的に接続されたドレイン電極と、
前記第1の酸化物半導体膜、前記ソース電極および前記ドレイン電極上のゲート絶縁膜と、
前記ゲート絶縁膜上のゲート電極と、を有し、
前記ゲート絶縁膜、前記第2の絶縁膜および前記第1の酸化物半導体膜のいずれかにおける水素濃度は、5×1018atoms/cm3未満であることを特徴とする半導体装置。 - 請求項4において、
前記ゲート電極は、前記ゲート絶縁膜を介して前記第1の酸化物半導体膜の上面および側面と重なる領域を有することを特徴とする半導体装置。 - 請求項4又は請求項5において、
前記ソース電極または前記ドレイン電極と電気的に接続されたノードを有し、
前記ソース電極および前記ドレイン電極を有するトランジスタが非導通状態のとき、前記ノードの電圧を、85℃で10年間保持することを特徴とする半導体装置。 - 請求項4又は請求項5において、
前記ソース電極または前記ドレイン電極と電気的に接続された容量素子を有し、
前記ソース電極および前記ドレイン電極を有するトランジスタのチャネル幅1μmあたりのオフ電流は、85℃で4.3yA未満であり、
前記トランジスタのソース電極またはドレイン電極と前記容量素子との間の電位を3.15×108秒間保持することを特徴とする半導体装置。 - 請求項4又は請求項5において、
前記ソース電極または前記ドレイン電極と電気的に接続された容量素子を有し、
前記ソース電極および前記ドレイン電極を有するトランジスタのチャネル幅1μmあたりのオフ電流は、95℃で1.5yA未満であり、
前記トランジスタのソース電極またはドレイン電極と前記容量素子との間の電位を3.15×108秒間保持することを特徴とする半導体装置。 - 請求項1乃至請求項8のいずれか一において、
前記第1のバリア膜は、酸化アルミニウムを有し、
前記第1のバリア膜は、昇温脱離ガス分光法分析において20℃乃至600℃での水素分子の脱離量は2×1015個/cm2未満であることを特徴とする半導体装置。 - 請求項1乃至請求項9のいずれか一において、
前記第1の酸化物半導体膜上の、第2のバリア膜を有することを特徴とする半導体装置。 - 請求項10において、
前記第2のバリア膜は、酸化アルミニウムを有し、
前記第2のバリア膜は、昇温脱離ガス分光法分析において20℃乃至600℃での水素分子の脱離量は2×10 15 個/cm 2 未満であることを特徴とする半導体装置。 - 請求項1乃至請求項11のいずれか一において、
前記第1の酸化物半導体膜を挟むように第2の酸化物半導体膜および第3の酸化物半導体膜を有し、
前記第2の酸化物半導体膜および前記第3の酸化物半導体膜は、前記第1の酸化物半導体膜が有する金属元素を一種以上有することを特徴とする半導体装置。 - 請求項1乃至請求項12のいずれか一において、
前記第1の絶縁膜の下方に、半導体材料を含む基板に設けられたトランジスタを有することを特徴とする半導体装置。
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Also Published As
Publication number | Publication date |
---|---|
US9431435B2 (en) | 2016-08-30 |
TW201901814A (zh) | 2019-01-01 |
US10186604B2 (en) | 2019-01-22 |
CN105659369A (zh) | 2016-06-08 |
JP2019068079A (ja) | 2019-04-25 |
CN110571278A (zh) | 2019-12-13 |
KR20160073374A (ko) | 2016-06-24 |
US20150108475A1 (en) | 2015-04-23 |
CN105659369B (zh) | 2019-10-22 |
TWI795613B (zh) | 2023-03-11 |
US9780201B2 (en) | 2017-10-03 |
TW201523885A (zh) | 2015-06-16 |
KR20210080622A (ko) | 2021-06-30 |
KR102270823B1 (ko) | 2021-06-30 |
US20160336433A1 (en) | 2016-11-17 |
TW202029357A (zh) | 2020-08-01 |
KR102436895B1 (ko) | 2022-08-26 |
TWI679707B (zh) | 2019-12-11 |
JP2015109425A (ja) | 2015-06-11 |
TWI644435B (zh) | 2018-12-11 |
US20180102420A1 (en) | 2018-04-12 |
WO2015060318A1 (en) | 2015-04-30 |
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