JP6431472B2 - パターン形成方法 - Google Patents
パターン形成方法 Download PDFInfo
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- JP6431472B2 JP6431472B2 JP2015251374A JP2015251374A JP6431472B2 JP 6431472 B2 JP6431472 B2 JP 6431472B2 JP 2015251374 A JP2015251374 A JP 2015251374A JP 2015251374 A JP2015251374 A JP 2015251374A JP 6431472 B2 JP6431472 B2 JP 6431472B2
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- resist film
- pattern
- exposure
- forming method
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
レジスト膜にホールパターンを形成するパターン形成方法であって、
被処理体の上に化学増幅型のフォトレジストにより形成されるレジスト膜を形成するレジスト膜形成工程と、
前記ホールパターンのピッチの略√2倍のピッチを有する明視野マスクを用いて前記レジスト膜を露光する露光工程と、
前記露光工程の後、前記レジスト膜に有機溶媒である第1現像液を供給してネガ型現像を行うことで、前記レジスト膜の未露光部を除去する第1現像工程と、
前記第1現像工程の後、前記レジスト膜の側壁部を改質する改質工程と、
前記改質工程の後、前記レジスト膜にアルカリ水溶液である第2現像液を供給してポジ型現像を行うことで、前記レジスト膜の露光部を除去する第2現像工程と
を含み、
前記改質工程は、前記露光工程において前記レジスト膜に含まれる光酸発生剤から発生した酸を失活させることにより、前記第2現像液に対する前記レジスト膜の側壁部の溶解性を小さくする処理である。
12 レジスト膜
12a 露光部
12b 未露光部
12c 中間露光部
12s 側壁部
20 明視野マスク
Claims (5)
- レジスト膜にホールパターンを形成するパターン形成方法であって、
被処理体の上に化学増幅型のフォトレジストにより形成されるレジスト膜を形成するレジスト膜形成工程と、
前記ホールパターンのピッチの略√2倍のピッチを有する明視野マスクを用いて前記レジスト膜を露光する露光工程と、
前記露光工程の後、前記レジスト膜に有機溶媒である第1現像液を供給してネガ型現像を行うことで、前記レジスト膜の未露光部を除去する第1現像工程と、
前記第1現像工程の後、前記レジスト膜の側壁部を改質する改質工程と、
前記改質工程の後、前記レジスト膜にアルカリ水溶液である第2現像液を供給してポジ型現像を行うことで、前記レジスト膜の露光部を除去する第2現像工程と
を含み、
前記改質工程は、前記露光工程において前記レジスト膜に含まれる光酸発生剤から発生した酸を失活させることにより、前記第2現像液に対する前記レジスト膜の側壁部の溶解性を小さくする処理である、
パターン形成方法。 - 前記改質工程は、前記レジスト膜の側壁部を、アンモニアと反応させる処理を含む、
請求項1に記載のパターン形成方法。 - 前記改質工程は、前記レジスト膜の側壁部を、有機塩基と反応させる処理を含む、
請求項1に記載のパターン形成方法。 - 前記改質工程は、前記レジスト膜の側壁部を、アミノ基を有するシランカップリング剤と反応させる処理を含む、
請求項1に記載のパターン形成方法。 - 前記露光工程と前記第1現像工程との間に、前記レジスト膜を加熱する工程を含む、
請求項1乃至4のいずれか一項に記載のパターン形成方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015251374A JP6431472B2 (ja) | 2015-12-24 | 2015-12-24 | パターン形成方法 |
US15/381,321 US10539876B2 (en) | 2015-12-24 | 2016-12-16 | Pattern forming method |
KR1020160174956A KR102668037B1 (ko) | 2015-12-24 | 2016-12-20 | 패턴 형성 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015251374A JP6431472B2 (ja) | 2015-12-24 | 2015-12-24 | パターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017116708A JP2017116708A (ja) | 2017-06-29 |
JP6431472B2 true JP6431472B2 (ja) | 2018-11-28 |
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JP2015251374A Active JP6431472B2 (ja) | 2015-12-24 | 2015-12-24 | パターン形成方法 |
Country Status (3)
Country | Link |
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US (1) | US10539876B2 (ja) |
JP (1) | JP6431472B2 (ja) |
KR (1) | KR102668037B1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6236481B2 (ja) * | 2016-02-17 | 2017-11-22 | 東京エレクトロン株式会社 | パターン形成方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5064748A (en) * | 1987-04-27 | 1991-11-12 | Mcnc | Method for anisotropically hardening a protective coating for integrated circuit manufacture |
JPH08234451A (ja) * | 1995-03-01 | 1996-09-13 | Hitachi Ltd | パターン形成方法 |
JP3943741B2 (ja) | 1999-01-07 | 2007-07-11 | 株式会社東芝 | パターン形成方法 |
EP1665894A4 (en) * | 2003-09-16 | 2009-12-16 | Daewoo Electronics Service Co | ORGANIC ELECTROLUMINESCENT DIODE SCREEN AND METHOD FOR MANUFACTURING THE SAME |
JP2005181758A (ja) * | 2003-12-19 | 2005-07-07 | Toshiba Corp | レジストパターン形成方法 |
JP2008076431A (ja) * | 2006-09-19 | 2008-04-03 | Hitachi Displays Ltd | 表示装置およびその製造方法 |
US9847309B2 (en) * | 2006-09-22 | 2017-12-19 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming vertical interconnect structure between semiconductor die and substrate |
US8852848B2 (en) * | 2010-07-28 | 2014-10-07 | Z Electronic Materials USA Corp. | Composition for coating over a photoresist pattern |
JP5990367B2 (ja) * | 2011-06-17 | 2016-09-14 | 富士フイルム株式会社 | パターン形成方法、及び、これを用いた電子デバイスの製造方法 |
JP2015045836A (ja) * | 2013-08-02 | 2015-03-12 | 富士フイルム株式会社 | パターン形成方法及びそれに用いられる表面処理剤、並びに、電子デバイスの製造方法及び電子デバイス |
JP6340304B2 (ja) * | 2013-11-29 | 2018-06-06 | 富士フイルム株式会社 | パターン形成方法、及び電子デバイスの製造方法 |
JP6126570B2 (ja) * | 2013-12-13 | 2017-05-10 | 富士フイルム株式会社 | パターン形成方法、電子デバイスの製造方法 |
JP6296147B2 (ja) * | 2014-03-03 | 2018-03-20 | 日本電気株式会社 | 検知装置、検知ユニットおよび検知システム |
JP6239466B2 (ja) * | 2014-08-15 | 2017-11-29 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
TWI584061B (zh) * | 2014-08-27 | 2017-05-21 | 羅門哈斯電子材料有限公司 | 多重圖案的形成方法 |
US9329471B1 (en) * | 2014-11-05 | 2016-05-03 | Globalfoundries Inc. | Achieving a critical dimension target based on resist characteristics |
-
2015
- 2015-12-24 JP JP2015251374A patent/JP6431472B2/ja active Active
-
2016
- 2016-12-16 US US15/381,321 patent/US10539876B2/en active Active
- 2016-12-20 KR KR1020160174956A patent/KR102668037B1/ko active IP Right Grant
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Publication number | Publication date |
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JP2017116708A (ja) | 2017-06-29 |
KR102668037B1 (ko) | 2024-05-21 |
US20170184972A1 (en) | 2017-06-29 |
US10539876B2 (en) | 2020-01-21 |
KR20170076580A (ko) | 2017-07-04 |
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