JP6425382B2 - Connection method and joined body - Google Patents

Connection method and joined body Download PDF

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Publication number
JP6425382B2
JP6425382B2 JP2014001704A JP2014001704A JP6425382B2 JP 6425382 B2 JP6425382 B2 JP 6425382B2 JP 2014001704 A JP2014001704 A JP 2014001704A JP 2014001704 A JP2014001704 A JP 2014001704A JP 6425382 B2 JP6425382 B2 JP 6425382B2
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Japan
Prior art keywords
ceramic substrate
terminal
anisotropic conductive
conductive film
height variation
Prior art date
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JP2014001704A
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Japanese (ja)
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JP2015130426A (en
JP2015130426A5 (en
Inventor
良介 小高
良介 小高
佐藤　大祐
大祐 佐藤
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Dexerials Corp
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Dexerials Corp
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Publication date
Priority to JP2014001704A priority Critical patent/JP6425382B2/en
Application filed by Dexerials Corp filed Critical Dexerials Corp
Priority to KR1020167021411A priority patent/KR102275926B1/en
Priority to TW104100297A priority patent/TWI684393B/en
Priority to CN201580003741.8A priority patent/CN106063391B/en
Priority to CN201910412779.0A priority patent/CN109994392B/en
Priority to PCT/JP2015/050140 priority patent/WO2015105098A1/en
Publication of JP2015130426A publication Critical patent/JP2015130426A/en
Publication of JP2015130426A5 publication Critical patent/JP2015130426A5/en
Application granted granted Critical
Publication of JP6425382B2 publication Critical patent/JP6425382B2/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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Description

本発明は、接続方法、及び接合体に関する。   The present invention relates to a connection method and a joined body.

エポキシ系の異方性導電接着フィルムやラジカル重合系の異方性導電接着フィルムは、電子部品用の接着剤として用いられている（例えば、特許文献１〜３参照）。
また、接着剤成分とセラミックとの接着力を向上させるために、疎水性シリカ表面がジスルフィド系シランカップリング剤で表面処理されたシリカ粒子を異方性導電フィルムに配合したものが用いられることがある（例えば、特許文献４参照）。 Epoxy-based anisotropic conductive adhesive films and radical polymerization-based anisotropic conductive adhesive films are used as adhesives for electronic parts (see, for example, Patent Documents 1 to 3).
Moreover, in order to improve the adhesive force of an adhesive agent component and a ceramic, what mixed the silica particle in which the hydrophobic silica surface was surface-treated by the disulfide type silane coupling agent in the anisotropic conductive film is used. (See, for example, Patent Document 4).

異方性導電接着フィルムは、携帯機器のカメラモジュールと基板の接続に使用されることがある。しかし、カメラモジュールにはセラミック基板が使用されることがあり、その場合は、非常に低い圧力でないと、基板が割れたり、電子部品が故障したりする等の問題がある。また、一般にセラミック基板は、端子高さのバラツキが大きく、従来の異方性導電接着フィルムでは、このバラツキに対応することが困難である。
前記端子高さのバラツキは、圧着後のフレキシブル基板に大きな凹凸を形成させることとなり、圧着後に反発力が生じることになる。通常のラジカル重合系の異方性導電接着フィルムでは、凝集力が小さいため、この反発力に抗うことができず、導通抵抗が大きくなり、接続信頼性が低下する恐れがある。
また、近年、電子部品の多様化に伴い、リペア性の要求が高まっているところ、エポキシ系の異方性導電接着フィルムでは、凝集力が大きいため、接続信頼性は優れるが、リペア性が不十分である。 Anisotropic conductive adhesive film may be used to connect a camera module of a portable device to a substrate. However, a ceramic substrate may be used for the camera module, and in such a case, if the pressure is not very low, there is a problem that the substrate is broken or an electronic component is broken. Also, in general, the variation in height of the terminals is large in the ceramic substrate, and it is difficult to cope with the variation in the conventional anisotropic conductive adhesive film.
The variation in the height of the terminals causes large irregularities to be formed on the flexible substrate after pressure bonding, and a repulsive force is generated after pressure bonding. In a conventional radical polymerization anisotropic conductive adhesive film, since the cohesion is small, the repulsion can not be resisted, and the conduction resistance may be increased, and the connection reliability may be reduced.
Also, in recent years, with the diversification of electronic parts, the demand for repairability is increasing. With an epoxy-based anisotropic conductive adhesive film, since the cohesive force is large, connection reliability is excellent but the repairability is not good. It is enough.

したがって、セラミック基板の端子高さバラツキがあっても、易リペア性及び接続信頼性に優れる接続方法及び接合体が求められているのが現状である。   Therefore, at present, there is a demand for a connection method and a joined body which are excellent in easy repairability and connection reliability even when the terminal height of the ceramic substrate varies.

特開２００３−２３８９２５号公報JP 2003-238925 A 特開２００２−１４６３２５号公報JP, 2002-146325, A 特開２００２−１２８４２号公報Japanese Patent Laid-Open No. 2002-12842 特開２０１１−４９１８６号公報JP, 2011-49186, A

本発明は、従来における前記諸問題を解決し、以下の目的を達成することを課題とする。即ち、本発明は、セラミック基板の端子高さバラツキがあっても、易リペア性及び接続信頼性に優れる接続方法及び接合体を提供することを目的とする。   An object of the present invention is to solve the above-mentioned problems in the prior art and to achieve the following objects. That is, an object of the present invention is to provide a connection method and a joined body which are excellent in easy repairability and connection reliability even when the terminal height of the ceramic substrate is varied.

前記課題を解決するための手段としては、以下の通りである。即ち、
＜１＞ セラミック基板の端子と、電子部品の端子とを異方性導電接続させる接続方法において、
前記セラミック基板の端子上に異方性導電フィルムを貼り付ける貼付工程と、
前記異方性導電フィルム上に前記電子部品を載置する載置工程と、
前記電子部品を加熱押圧部材により２ＭＰａ未満の押圧力で加熱及び押圧する加熱押圧工程と、を含み、
前記セラミック基板の高さバラツキが、２０μｍ以上であり、
前記異方性導電フィルムが、ラジカル重合性物質と、熱ラジカル開始剤と、平均粒径が１３μｍ以上の導電性粒子とを含有することを特徴とする接続方法である。
＜２＞ 導電性粒子の平均粒径（μｍ）が、セラミック基板の高さバラツキ（μｍ）の３５％〜１００％である前記＜１＞に記載の接続方法である。
＜３＞ 異方性導電フィルムが、表面に有機基を有するシリカ粒子を３質量％〜２０質量％含有する前記＜１＞から＜２＞のいずれかに記載の接続方法である。
＜４＞ 有機基が、ビニル基及びアクリロイル基のいずれかである前記＜３＞に記載の接続方法である。
＜５＞ セラミック基板が、カメラモジュールである前記＜１＞から＜４＞のいずれかに記載の接続方法である。
＜６＞ 前記＜１＞から＜５＞のいずれかに記載の接続方法を用いて作製されたことを特徴とする接合体である。 The means for solving the problems are as follows. That is,
<1> In a connection method for anisotropically conductively connecting a terminal of a ceramic substrate and a terminal of an electronic component,
Applying an anisotropic conductive film on the terminal of the ceramic substrate;
Placing the electronic component on the anisotropic conductive film;
Heating and pressing the electronic component by a heating and pressing member with a pressing force of less than 2 MPa,
The height variation of the ceramic substrate is 20 μm or more,
The anisotropic conductive film contains a radical polymerizable substance, a thermal radical initiator, and conductive particles having an average particle diameter of 13 μm or more.
<2> The connection method according to <1>, wherein the average particle size (μm) of the conductive particles is 35% to 100% of the height variation (μm) of the ceramic substrate.
A <3> anisotropic conductive film is a connection method in any one of said <1> to <2> which contains 3 mass%-20 mass% of silica particles which have an organic group on the surface.
<4> The connection method according to <3>, wherein the organic group is any of a vinyl group and an acryloyl group.
<5> The connection method according to any one of <1> to <4>, wherein the ceramic substrate is a camera module.
<6> A bonded body produced by using the connection method according to any one of <1> to <5>.

本発明によれば、従来における前記諸問題を解決し、前記目的を達成することができ、セラミック基板の端子高さバラツキがあっても、易リペア性及び接続信頼性に優れる接続方法及び接合体を提供することができる。   According to the present invention, the above-mentioned various problems in the prior art can be solved, and the above object can be achieved, and a connection method and a joint body having excellent repairability and connection reliability even if there are terminal height variations of a ceramic substrate. Can be provided.

図１は、セラミック基板の一例を示す概略図である。FIG. 1 is a schematic view showing an example of a ceramic substrate. 図２は、高さバラツキを求めるためのプロファイルの一例を示す図である。FIG. 2 is a view showing an example of a profile for obtaining height variation.

（接続方法及び接合体）
本発明の接続方法は、貼付工程と、載置工程と、加熱押圧工程とを少なくとも含み、更に必要に応じて、その他の工程を含む。
前記接続方法は、セラミック基板の端子と、電子部品との端子とを異方性導電接続させる接続方法である。
本発明の接合体は、本発明の前記接続方法により製造される。 (Connection method and joined body)
The connection method of the present invention at least includes a sticking step, a placing step, and a heating and pressing step, and further includes other steps as necessary.
The connection method is a connection method in which terminals of a ceramic substrate and terminals of an electronic component are anisotropically conductively connected.
The bonded body of the present invention is manufactured by the connection method of the present invention.

＜貼付工程＞
前記貼付工程としては、セラミック基板の端子上に異方性導電フィルムを貼り付ける工程であれば、特に制限はなく、目的に応じて適宜選択することができる。 <Pasting process>
If it is a process of affixing an anisotropic conductive film on the terminal of a ceramic substrate as said sticking process, there will be no restriction in particular, and it can choose suitably according to the object.

＜＜セラミック基板＞＞
前記セラミック基板としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、カメラモジュール、チューナーモジュール、パワーアンプモジュールなどが挙げられる。 << Ceramic substrate >>
There is no restriction | limiting in particular as said ceramic substrate, According to the objective, it can select suitably, For example, a camera module, a tuner module, a power amplifier module etc. are mentioned.

−高さバラツキ−
前記セラミック基板の高さバラツキは、本発明の接続方法においては、２０μｍ以上である。本発明の接続方法においては、高さバラツキが２０μｍ以上あるセラミック基板を用いても、易リペア性及び接続信頼性に優れる接続方法が得られる。 -Height variation-
The height variation of the ceramic substrate is 20 μm or more in the connection method of the present invention. In the connection method of the present invention, even if a ceramic substrate having a height variation of 20 μm or more is used, a connection method having excellent repairability and connection reliability can be obtained.

−高さバラツキの測定−
セラミック基板の高さバラツキは、例えば、表面粗さ計（小坂研究所製、サーフコーダ ＳＥ−４００）を用いて測定できる。
具体的には、図１に示すような、端子１を有するセラミック基板２に対して、表面粗さ計の触針を、端子１上の図１の矢印の方向に走査させる。そうすると、端子１による凹凸並びにセラミック基板の歪みにより、図２に示すような走査プロファイルが得られる。
得られたプロファイルの大きなうねりの上部と下部との差よりバラツキを測定する。詳しくは、前記上部において短距離で見た時の小さなうねりの上部と、前記下部において短距離で見た時の小さなうねりの上部との差より、セラミック基板の高さバラツキを測定する。 -Measurement of height variation-
The height variation of the ceramic substrate can be measured, for example, using a surface roughness meter (Surf coder SE-400, manufactured by Kosaka Laboratory).
Specifically, with respect to the ceramic substrate 2 having the terminal 1 as shown in FIG. 1, the stylus of the surface roughness meter is scanned in the direction of the arrow of FIG. Then, due to the unevenness due to the terminal 1 and the distortion of the ceramic substrate, a scanning profile as shown in FIG. 2 is obtained.
The variation is measured from the difference between the top and bottom of the large waviness of the obtained profile. Specifically, the height variation of the ceramic substrate is measured from the difference between the upper part of the small waviness when viewed at the upper part in the short distance at the upper part and the upper part of the small waviness when viewed at the short distance in the lower part.

＜＜異方性導電フィルム＞＞
前記異方性導電フィルムは、導電性粒子と、ラジカル重合性物質と、熱ラジカル開始剤とを少なくとも含有し、好ましくはシリカ粒子を含有し、更に必要に応じて、その他の成分を含有する。 << Anisotropic Conductive Film >>
The anisotropic conductive film contains at least conductive particles, a radically polymerizable substance, and a thermal radical initiator, preferably contains silica particles, and further contains other components as required.

−導電性粒子−
前記導電性粒子としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、銅、鉄、ニッケル、金、銀、アルミニウム、亜鉛、ステンレス、ヘマタイト（Ｆｅ２Ｏ３）、マグネタイト（Ｆｅ３Ｏ４）、一般式：ＭＦｅ２Ｏ４、ＭＯ・ｎＦｅ２Ｏ３（両式中、Ｍは、２価の金属を表し、例えば、Ｍｎ，Ｃｏ，Ｎｉ，Ｃｕ，Ｚｎ，Ｂａ，Ｍｇなどが挙げられる。ｎは、正の整数である。そして、前記Ｍは、繰り返し時において同種であってもよいし、異種であってもよい。）で表される各種フェライト、ケイ素綱粉、パーマロイ、Ｃｏ基アモルファス合金、センダスト、アルパーム、スーパーマロイ、ミューメタル、パーメンター、パーミンバー等の各種金属粉、その合金粉などが挙げられる。また、アクリル樹脂、アクリロニトリル・スチレン（ＡＳ）樹脂、ベンゾグアナミン樹脂、ジビニルベンゼン系樹脂、スチレン系樹脂等の粒子の表面に金属をコートしたもの、あるいは、これらの粒子の表面に更に絶縁薄膜をコートしたもの等が挙げられる。これらの中でも、接続信頼性の点から、アクリル樹脂の粒子の表面をＮｉ−Ａｕコートした粒子がより好ましい。
これらの導電性粒子は、１種単独で使用してもよいし、２種以上を併用してもよい。 -Conductive particles-
Examples of the conductive particles is not particularly limited and may be appropriately selected depending on the intended purpose, e.g., copper, iron, nickel, gold, silver, aluminum, zinc, stainless steel, hematite (Fe 2 O 3), magnetite (Fe 3 O 4 ), general formulas: MFe 2 O 4 , MO · nFe 2 O 3 (wherein M represents a divalent metal, and examples thereof include Mn, Co, Ni, Cu, Zn, Ba, Mg includes, for example, n is a positive integer, and M may be the same or different at the time of repetition) various ferrites represented by And various metal powders such as permalloy, Co-based amorphous alloy, sendust, alpalm, supermalloy, mu metal, permenter, permin bar, and alloy powders thereof. In addition, metal coated on the surface of particles such as acrylic resin, acrylonitrile styrene (AS) resin, benzoguanamine resin, divinyl benzene resin, and styrene resin, or an insulating thin film is further coated on the surface of these particles. And the like. Among these, from the viewpoint of connection reliability, particles in which the surface of acrylic resin particles is coated with Ni-Au are more preferable.
These conductive particles may be used alone or in combination of two or more.

前記導電性粒子の平均粒径は、１３μｍ以上であり、１５μｍ〜３０μｍが好ましい。
また、前記導電性粒子の平均粒径（μｍ）は、前記セラミック基板の高さバラツキ（μｍ）の３５％〜１００％であることが導通確保の点で好ましい。
前記導電性粒子の粒径は、走査型電子顕微鏡（ＳＥＭ）により測定することができる。前記導電性粒子の粒径について任意の１００個を測定した際の算術平均値が、前記平均粒径である。 The average particle diameter of the conductive particles is 13 μm or more, preferably 15 μm to 30 μm.
The average particle diameter (μm) of the conductive particles is preferably 35% to 100% of the height variation (μm) of the ceramic substrate from the viewpoint of securing conduction.
The particle size of the conductive particles can be measured by a scanning electron microscope (SEM). The arithmetic mean value at the time of measuring arbitrary 100 pieces about the particle size of the said electroconductive particle is the said average particle size.

前記異方性導電フィルムにおける前記導電性粒子の含有量としては、特に制限はなく、目的に応じて適宜選択することができるが、前記異方性導電フィルム１００質量部に対して、１質量部〜１０質量部が好ましい。   There is no restriction | limiting in particular as content of the said electroconductive particle in the said anisotropic conductive film, Although it can select suitably according to the objective, 1 mass part with respect to 100 mass parts of said anisotropic conductive films -10 mass parts are preferable.

−ラジカル重合性物質−
前記ラジカル重合性物質としては、前記熱ラジカル開始剤の作用によるラジカル重合する物質であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、エポキシアクリレート、ウレタンアクリレート、ポリエステルアクリレートなどが挙げられる。
前記ラジカル重合性物質は、１種単独で使用してもよいし、２種以上を併用してもよく、また、適宜合成したものであってもよいし、市販品であってもよい。 -Radical polymerizable substance-
The radically polymerizable substance is not particularly limited as long as it is a substance which is radically polymerized by the action of the thermal radical initiator, and can be appropriately selected according to the purpose. For example, epoxy acrylate, urethane acrylate, polyester acrylate Etc.
The radically polymerizable substance may be used singly or in combination of two or more, or may be appropriately synthesized, or may be a commercially available product.

前記異方性導電フィルムにおける前記ラジカル重合性物質の含有量としては、特に制限はなく、目的に応じて適宜選択することができるが、前記異方性導電フィルム１００質量部に対して、１０質量部〜６０質量部が好ましく、３０質量部〜６０質量部がより好ましい。   There is no restriction | limiting in particular as content of the said radically polymerizable substance in the said anisotropic conductive film, Although it can select suitably according to the objective, 10 mass with respect to 100 mass parts of said anisotropic conductive films A part-60 mass parts are preferable, and 30 mass parts-60 mass parts are more preferable.

−熱ラジカル開始剤−
前記熱ラジカル開始剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、有機過酸化物などが挙げられる。
前記有機過酸化物としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、パーオキシケタール類、ジアシルパーオキサイド類、パーオキシジカーボネート類、パーオキシエステル類、ジアルキルパーオキサイド類、ハイドロパーオキサイド類、シリルパーオキサイド類などが挙げられる。
前記熱ラジカル開始剤は、１種単独で使用してもよいし、２種以上を併用してもよく、また、適宜合成したものであってもよいし、市販品であってもよい。 -Thermal radical initiator-
There is no restriction | limiting in particular as said thermal radical initiator, According to the objective, it can select suitably, For example, an organic peroxide etc. are mentioned.
There is no restriction | limiting in particular as said organic peroxide, According to the objective, it can select suitably, For example, peroxy ketals, diacyl peroxides, peroxy dicarbonates, peroxy esters, dialkyl peroxides And hydroperoxides, silyl peroxides and the like.
The thermal radical initiators may be used alone or in combination of two or more, and may be appropriately synthesized, or may be commercially available products.

前記異方性導電フィルムにおける前記熱ラジカル開始剤の含有量としては、特に制限はなく、目的に応じて適宜選択することができるが、前記異方性導電フィルム１００質量部に対して、０．５質量部〜２０質量部が好ましい。   There is no restriction | limiting in particular as content of the said thermal radical initiator in the said anisotropic conductive film, Although it can select suitably according to the objective, With respect to 100 mass parts of said anisotropic conductive films, it is 0. 5 mass parts-20 mass parts are preferable.

−シリカ粒子−
前記シリカ粒子としては、特に制限はなく、目的に応じて適宜選択することができるが、有機基を有していることが好ましい。
前記有機基としては、特に制限はなく、目的に応じて適宜選択することができるが、ビニル基、アクリロイル基が、ラジカル重合性物質との反応性の点で好ましい。 -Silica particles-
There is no restriction | limiting in particular as said silica particle, Although it can select suitably according to the objective, It is preferable to have an organic group.
There is no restriction | limiting in particular as said organic group, Although it can select suitably according to the objective, A vinyl group and acryloyl group are preferable at the reactive point with a radically polymerizable substance.

前記異方性導電フィルムにおける前記シリカ粒子の含有量としては、特に制限はなく、目的に応じて適宜選択することができるが、前記異方性導電フィルムに対して、３質量％〜２０質量％であることが溶融粘度の調整の点で好ましい。   There is no restriction | limiting in particular as content of the said silica particle in the said anisotropic conductive film, Although it can select suitably according to the objective, 3 mass%-20 mass% with respect to the said anisotropic conductive film It is preferable from the viewpoint of adjusting the melt viscosity.

−その他の成分−
前記その他の成分としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、膜形成樹脂、シランカップリング剤などが挙げられる。 -Other ingredients-
There is no restriction | limiting in particular as said other component, According to the objective, it can select suitably, For example, film formation resin, a silane coupling agent, etc. are mentioned.

−−膜形成樹脂−−
前記膜形成樹脂としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、フェノキシ樹脂、ポリエステル樹脂、ポリウレタン樹脂、ポリエステルウレタン樹脂、アクリル樹脂、ポリイミド樹脂、ブチラール樹脂などが挙げられるが、膜形成状態、接続信頼性などの観点からフェノキシ樹脂が好適に挙げられる。
これらの膜形成樹脂は、１種単独で使用してもよいし、２種以上を併用してもよく、また、適宜合成したものであってもよいし、市販品であってもよい。 --Film forming resin--
There is no restriction | limiting in particular as said film formation resin, According to the objective, it can select suitably, For example, a phenoxy resin, polyester resin, a polyurethane resin, polyester urethane resin, an acrylic resin, a polyimide resin, butyral resin etc. are mentioned. However, from the viewpoint of film formation state, connection reliability, etc., phenoxy resin is preferably mentioned.
One of these film-forming resins may be used alone, or two or more thereof may be used in combination, or may be appropriately synthesized, or may be a commercially available product.

−−シランカップリング剤−−
前記シランカップリング剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、エポキシ系シランカップリング剤、アクリル系シランカップリング剤、チオール系シランカップリング剤、アミン系シランカップリング剤などが挙げられる。
前記異方性導電フィルムにおける前記シランカップリング剤の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。 --Silane coupling agent--
There is no restriction | limiting in particular as said silane coupling agent, According to the objective, it can select suitably, For example, an epoxy-type silane coupling agent, an acryl-type silane coupling agent, a thiol-type silane coupling agent, an amine silane Coupling agents and the like can be mentioned.
There is no restriction | limiting in particular as content of the said silane coupling agent in the said anisotropic conductive film, According to the objective, it can select suitably.

前記異方性導電フィルムの平均厚みとしては、特に制限はなく、目的に応じて適宜選択することができるが、２０μｍ〜３５μｍが好ましく、２０μｍ〜３０μｍがより好ましい。   There is no restriction | limiting in particular as an average thickness of the said anisotropic conductive film, Although it can select suitably according to the objective, 20 micrometers-35 micrometers are preferable, and 20 micrometers-30 micrometers are more preferable.

＜載置工程＞
前記載置工程としては、前記異方性導電フィルム上に前記電子部品を載置する工程であれば、特に制限はなく、目的に応じて適宜選択することができる。
通常、この際、異方性導電接続は行われていない。 <Placement process>
There is no restriction | limiting in particular if it is a process of mounting the said electronic component on the said anisotropic conductive film as said pre-position process, According to the objective, it can select suitably.
Usually, no anisotropic conductive connection is made at this time.

＜＜電子部品＞＞
前記電子部品としては、異方性導電性接続の対象となる、端子を有する電子部品であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、ＩＣチップ、ＴＡＢテープ、液晶パネル、フレキシブル基板などが挙げられる。
前記ＩＣチップとしては、例えば、フラットパネルディスプレイ（ＦＰＤ）における液晶画面制御用ＩＣチップなどが挙げられる。 << Electronic parts >>
The electronic component is not particularly limited as long as it is an electronic component having a terminal to be subjected to anisotropic conductive connection, and can be appropriately selected according to the purpose. For example, an IC chip, a TAB tape, A liquid crystal panel, a flexible substrate, etc. are mentioned.
Examples of the IC chip include a liquid crystal screen control IC chip in a flat panel display (FPD).

＜加熱押圧工程＞
前記加熱押圧工程としては、前記電子部品を加熱押圧部材により２ＭＰａ未満の押圧力で加熱及び押圧する工程であれば、特に制限はなく、目的に応じて適宜選択することができる。 <Heating and pressing process>
The heating and pressing step is not particularly limited as long as it is a step of heating and pressing the electronic component with a pressing force of less than 2 MPa by the heating and pressing member, and can be appropriately selected according to the purpose.

前記加熱押圧部材としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、加熱機構を有する押圧部材などが挙げられる。前記加熱機構を有する押圧部材としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、ヒートツールなどが挙げられる。
前記加熱の温度としては、特に制限はなく、目的に応じて適宜選択することができるが、１４０℃〜２００℃が好ましい。
前記押圧の圧力としては、２ＭＰａ未満であれば、特に制限はなく、目的に応じて適宜選択することができるが、０．５ＭＰａ〜１．５ＭＰａが好ましい。
前記加熱及び押圧の時間としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、０．１秒間〜１２０秒間が挙げられる。 There is no restriction | limiting in particular as said heating press member, According to the objective, it can select suitably, For example, the press member etc. which have a heating mechanism are mentioned. There is no restriction | limiting in particular as a press member which has the said heating mechanism, According to the objective, it can select suitably, For example, a heat tool etc. are mentioned.
There is no restriction | limiting in particular as temperature of the said heating, Although it can select suitably according to the objective, 140 degreeC-200 degreeC are preferable.
There is no restriction | limiting in particular as a pressure of the said press, if it is less than 2 MPa, According to the objective, although it can select suitably, 0.5 MPa-1.5 MPa are preferable.
There is no restriction | limiting in particular as time of the said heating and pressing, According to the objective, it can select suitably, For example, 0.1 second-120 second are mentioned.

以下、本発明の実施例を説明するが、本発明は、これらの実施例に何ら限定されるものではない。   Examples of the present invention will be described below, but the present invention is not limited to these examples.

（実施例１）
＜異方性導電フィルムの作製＞
ビスフェノールＡフェノキシ樹脂（商品名：ＹＰ５０、新日鉄住金化学株式会社製）を４０質量部、２官能エポキシアクリレート（商品名：３００２Ａ、共栄社化学株式会社製）を１５質量部、２官能アクリレート（商品名：ＤＣＰ、新中村化学工業株式会社製）を１６質量部、ブタジエン−アクリロニトリルゴム（商品名：ＸＥＲ−９１、ＪＳＲ株式会社製）を１５質量部、水酸基含有アクリルゴム（商品名：ＳＧ−８０Ｈ、ナガセケムテックス株式会社製）を４質量部、アクリロイル基表面処理シリカ（商品名：ＹＡ０１０Ｃ−ＳＭ１、株式会社アドマテックス製）を３質量部、脂肪族系ジアシルパーオキサイド（商品名：パーロイルＬ、日油株式会社製）を４質量部及び平均粒径１５μｍのＮｉ／Ａｕメッキアクリル樹脂粒子（日本化学株式会社製）を３質量部を配合した合計１００質量部の異方性導電組成物を得た。
得られた異方性導電組成物を、離型ＰＥＴ（ポリエチレンテレフタレート）上に塗布した後、８０℃で乾燥し、平均厚み２５μｍの異方性導電フィルムを得た。 Example 1
<Preparation of anisotropic conductive film>
40 parts by mass of bisphenol A phenoxy resin (trade name: YP50, manufactured by Nippon Steel Sumikin Chemical Co., Ltd.), 15 parts by mass of bifunctional epoxy acrylate (trade name: 3002A, manufactured by Kyoeisha Chemical Co., Ltd.), bifunctional acrylate (trade name: 16 parts by mass of DCP, manufactured by Shin-Nakamura Chemical Co., Ltd., 15 parts by mass of butadiene-acrylonitrile rubber (trade name: XER-91, manufactured by JSR Corp.), hydroxyl group-containing acrylic rubber (trade name: SG-80H, Nagase) 4 parts by mass of Chemtex Co., Ltd., 3 parts by mass of acryloyl group surface-treated silica (trade name: YA010C-SM1, manufactured by Admatex Co., Ltd.), aliphatic diacyl peroxide (trade name: Peroyl L, NOF Corporation) Ni / Au plated acrylic resin particles (Nipponization Co., Ltd.) 4 parts by mass and average particle diameter 15 μm To obtain an anisotropic conductive composition 100 parts by mass of the combination blended with 3 parts by weight Co., Ltd.).
The obtained anisotropic conductive composition was coated on mold release PET (polyethylene terephthalate) and then dried at 80 ° C. to obtain an anisotropic conductive film with an average thickness of 25 μm.

＜接続方法、及び接合体の製造＞
評価基材として、フレキシブルプリント基板（銅配線：ライン／スペース（Ｌ／Ｓ）＝１００μｍ／１００μｍ、端子高さ：１２μｍ、ポリイミド厚み：２５μｍ）とアルミナ製セラミック基板（タングステン配線：ライン／スペース（Ｌ／Ｓ）＝１００μｍ／１００μｍ、配線高さ：１０μｍ、基板厚み：０．４ｍｍ）を用い、異方性導電接続を行った。
セラミック基板の端子上に異方性導電フィルムを貼り付け、前記異方性導電フィルム上に前記電子部品を載置し、前記電子部品を加熱押圧部材により、１４０℃で、１０秒間、１ＭＰａの押圧力で加熱及び押圧することにより接合体が得られた。 <Manufacturing method of connection, and joined body>
As evaluation substrates, flexible printed circuit boards (Copper wiring: line / space (L / S) = 100 μm / 100 μm, terminal height: 12 μm, polyimide thickness: 25 μm) and alumina ceramic substrate (tungsten wiring: line / space (L) / S) = 100 μm / 100 μm, wiring height: 10 μm, substrate thickness: 0.4 mm), and anisotropic conductive connection was performed.
An anisotropic conductive film is pasted on a terminal of a ceramic substrate, the electronic component is mounted on the anisotropic conductive film, and the electronic component is pressed by a heating pressing member at 140 ° C. for 10 seconds at 1 MPa. A bonded body was obtained by heating and pressing with pressure.

＜導通抵抗の測定＞
各接合体について、初期及び温度８５℃、湿度８５％ＲＨ、５００ｈｒ投入後の接続抵抗値は、デジタルマルチメータ（３４４０１Ａ、アジレント・テクノロジー株式会社製）を用いて測定した。測定方法としては、４端子法を用い、電流１ｍＡを流して行った。
以下の基準で評価した。結果を表１−１に示す。
○：０．２Ω以上０．５Ω未満
△：０．５Ω以上１．０Ω未満
×：１．０Ω以上 <Measurement of conduction resistance>
The connection resistance value of each joint after initial stage and at a temperature of 85 ° C. and humidity of 85% RH for 500 hours was measured using a digital multimeter (34401A, manufactured by Agilent Technologies, Inc.). As a measurement method, a current of 1 mA was applied using a four-terminal method.
The following criteria were evaluated. The results are shown in Table 1-1.
○: 0.2Ω or more and less than 0.5Ω Δ: 0.5Ω or more and less than 1.0Ω ×: 1.0Ω or more

＜リペア性の評価＞
各接合体について、フレキシブルプリント基板をセラミック基板から剥がし、ＩＰＡ（イソプロピルアルコール）を十分に染み込ませた綿棒で接続部を５０往復擦り、残存する異方性導電フィルムが剥がれたものを○、剥がれなかったものを×とした。結果を表１−１に示す。 <Evaluation of repairability>
For each bonded body, peel the flexible printed circuit board from the ceramic board, rub the connecting part with the cotton swab fully impregnated with IPA (isopropyl alcohol) for 50 cycles, and remove the residual anisotropic conductive film by ○, not peeling off The thing was x. The results are shown in Table 1-1.

＜高さバラツキの測定＞
セラミック基板の端子上を、表面粗さ計（小坂研究所製、サーフコーダ ＳＥ−４００）の触針を走査させ、凹凸のプロファイルを得た。
得られたプロファイルの大きなうねりの上部と下部との差よりバラツキを測定した。詳しくは、前記上部において短距離で見た時の小さなうねりの上部と、前記下部において短距離で見た時の小さなうねりの上部との差より、セラミック基板の高さバラツキを測定した。結果を表１−１に示す。 <Measurement of height variation>
A stylus of a surface roughness meter (Surfcoder SE-400, manufactured by Kosaka Laboratory Ltd.) was scanned over the terminals of the ceramic substrate to obtain an uneven profile.
The variation was measured from the difference between the upper and lower portions of the large undulation of the obtained profile. Specifically, the height variation of the ceramic substrate was measured from the difference between the upper part of the small waviness when viewed at the upper part in the short distance at the upper part and the upper part of the small waviness when viewed at the short distance in the lower part. The results are shown in Table 1-1.

（実施例２〜１４、比較例１〜４）
＜異方性導電フィルムの作製、及び接合体の製造＞
実施例１において、材料の種類、圧着条件、圧力を表１−１及び表１−２のように変更した以外は、実施例１と同様にして、異方性導電フィルムの作製、及び接合体の製造を行った。
また、実施例１と同様の評価を行った。結果を表１−１及び表１−２に示す。 (Examples 2-14, Comparative Examples 1-4)
<Production of Anisotropic Conductive Film, and Production of Bonded Body>
Production of an anisotropic conductive film, and a joined body in the same manner as in Example 1 except that the type of material, the pressure bonding condition, and the pressure in Example 1 were changed as in Table 1-1 and Table 1-2. Production of
Further, the same evaluation as in Example 1 was performed. The results are shown in Tables 1-1 and 1-2.

ＹＰ５０：ビスフェノールＡフェノキシ樹脂（新日鉄住金化学株式会社製）
ＥＰ８２８：エポキシ樹脂（三菱化学株式会社製）
ノバキュア３９４１ＨＰ：硬化剤（旭化成ケミカルズ株式会社製）
３００２Ａ：２官能エポキシアクリレート（共栄社化学株式会社製）
ＤＣＰ：２官能アクリレート（新中村化学工業株式会社製）
ＸＥＲ−９１：ブタジエン−アクリロニトリルゴム（ＪＳＲ株式会社製）
ＳＧ−８０Ｈ：水酸基含有アクリルゴム（ナガセケムテックス株式会社製）
ＹＡ０１０Ｃ−ＳＭ１：アクリロイル基表面処理シリカ（アドマテックス株式会社製）
ＹＡ０１０Ｃ−ＳＶ２：ビニル基表面処理シリカ（アドマテックス株式会社製）
ＹＡ０１０Ｃ−ＳＰ２：フェニル基表面処理シリカ（アドマテックス株式会社製）
Ｒ２０２：シリカ（日本アエロジル株式会社製）
パーロイルＬ：脂肪族系ジアシルパーオキサイド（日油株式会社製）
Ｎｉ／Ａｕメッキアクリル樹脂粒子：平均粒径１０μｍ（日本化学株式会社製）
Ｎｉ／Ａｕメッキアクリル樹脂粒子：平均粒径１５μｍ（日本化学株式会社製）
Ｎｉ／Ａｕメッキアクリル樹脂粒子：平均粒径２０μｍ（日本化学株式会社製） YP50: Bisphenol A phenoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
EP 828: Epoxy resin (made by Mitsubishi Chemical Corporation)
Novacuer 3941HP: Hardener (made by Asahi Kasei Chemicals Corporation)
3002A: bifunctional epoxy acrylate (made by Kyoeisha Chemical Co., Ltd.)
DCP: bifunctional acrylate (made by Shin-Nakamura Chemical Co., Ltd.)
XER-91: Butadiene-Acrylonitrile Rubber (manufactured by JSR Corporation)
SG-80H: Hydroxy group containing acrylic rubber (manufactured by Nagase ChemteX Co., Ltd.)
YA010C-SM1: Acryloyl group surface treated silica (Admatex Co., Ltd. made)
YA010C-SV2: Vinyl surface-treated silica (Admatex Co., Ltd.)
YA010C-SP2: phenyl surface-treated silica (ADMATEX CORPORATION)
R202: Silica (made by Nippon Aerosil Co., Ltd.)
Peroyl L: Aliphatic diacyl peroxide (manufactured by NOF Corporation)
Ni / Au plated acrylic resin particles: average particle size 10 μm (manufactured by Nippon Kagaku Co., Ltd.)
Ni / Au plated acrylic resin particles: average particle size 15 μm (manufactured by Nippon Kagaku Co., Ltd.)
Ni / Au plated acrylic resin particles: average particle size 20 μm (manufactured by Nippon Kagaku Co., Ltd.)

本発明の接続方法であれば、セラミック基板の端子高さバラツキがあっても、易リペア性及び接続信頼性に優れることから、携帯電話のカメラモジュールに特に好適に使用できる。   According to the connection method of the present invention, even if there are terminal height variations of the ceramic substrate, since it is excellent in easy repairability and connection reliability, it can be particularly suitably used for a camera module of a mobile phone.

１ 端子
２ セラミック基板 1 terminal 2 ceramic substrate

Claims (11)

セラミック基板の端子と、電子部品の端子とを異方性導電接続させる接続方法において、
前記セラミック基板の端子上に異方性導電フィルムを貼り付ける貼付工程と、
前記異方性導電フィルム上に前記電子部品を載置する載置工程と、
前記電子部品を加熱押圧部材により２ＭＰａ未満の押圧力で加熱及び押圧する加熱押圧工程と、を含み、
前記セラミック基板の高さバラツキが、２０μｍ以上であり、
前記異方性導電フィルムが、ラジカル重合性物質と、熱ラジカル開始剤と、平均粒径が１３μｍ以上の導電性粒子とを含有し、
前記導電性粒子の平均粒径（μｍ）が、前記セラミック基板の高さバラツキ（μｍ）の３５％〜１００％であることを特徴とする接続方法。
ここで、前記高さバラツキは、表面粗さ計によって測定され、端子を含む領域の前記セラミック基板の走査プロファイルの大きなうねりの上部と下部との差である。 In a connection method for anisotropically conductively connecting a terminal of a ceramic substrate and a terminal of an electronic component,
Applying an anisotropic conductive film on the terminal of the ceramic substrate;
Placing the electronic component on the anisotropic conductive film;
Heating and pressing the electronic component by a heating and pressing member with a pressing force of less than 2 MPa,
The height variation of the ceramic substrate is 20 μm or more,
The anisotropic conductive film contains a radical polymerizable substance, a thermal radical initiator, and conductive particles having an average particle diameter of 13 μm or more,
The connection method, wherein an average particle diameter (μm) of the conductive particles is 35% to 100% of a height variation (μm) of the ceramic substrate.
Here, the height variation is measured by a surface roughness meter, and is the difference between the upper and lower portions of the large undulation of the scanning profile of the ceramic substrate in the region including the terminal. セラミック基板の端子と、電子部品の端子とを異方性導電接続させる接続方法において、
前記セラミック基板の端子上に異方性導電フィルムを貼り付ける貼付工程と、
前記異方性導電フィルム上に前記電子部品を載置する載置工程と、
前記電子部品を加熱押圧部材により２ＭＰａ未満の押圧力で加熱及び押圧する加熱押圧工程と、を含み、
前記セラミック基板の高さバラツキが、２０μｍ以上であり、
前記異方性導電フィルムが、ラジカル重合性物質と、熱ラジカル開始剤と、平均粒径が１３μｍ以上の導電性粒子とを含有し、
前記導電性粒子の平均粒径（μｍ）に対する前記セラミック基板の高さバラツキ（μｍ）が、２３／２０〜４０／１５であることを特徴とする接続方法。
ここで、前記高さバラツキは、表面粗さ計によって測定され、端子を含む領域の前記セラミック基板の走査プロファイルの大きなうねりの上部と下部との差である。 In a connection method for anisotropically conductively connecting a terminal of a ceramic substrate and a terminal of an electronic component,
Applying an anisotropic conductive film on the terminal of the ceramic substrate;
Placing the electronic component on the anisotropic conductive film;
Heating and pressing the electronic component by a heating and pressing member with a pressing force of less than 2 MPa,
The height variation of the ceramic substrate is 20 μm or more,
The anisotropic conductive film contains a radical polymerizable substance, a thermal radical initiator, and conductive particles having an average particle diameter of 13 μm or more,
Variation in height (μm) of the ceramic substrate with respect to the average particle size (μm) of the conductive particles is 23/20 to 40/15.
Here, the height variation is measured by a surface roughness meter, and is the difference between the upper and lower portions of the large undulation of the scanning profile of the ceramic substrate in the region including the terminal. セラミック基板の端子と、電子部品の端子とを異方性導電接続させる接続方法において、
前記セラミック基板の端子上に異方性導電フィルムを貼り付ける貼付工程と、
前記異方性導電フィルム上に前記電子部品を載置する載置工程と、
前記電子部品を加熱押圧部材により２ＭＰａ未満の押圧力で加熱及び押圧する加熱押圧工程と、を含み、
前記セラミック基板の高さバラツキが、２０μｍ以上４０μｍ以下であり、
前記異方性導電フィルムが、ラジカル重合性物質と、熱ラジカル開始剤と、平均粒径が１３μｍ以上３０μｍ以下の導電性粒子とを含有することを特徴とする接続方法。
ここで、前記高さバラツキは、表面粗さ計によって測定され、端子を含む領域の前記セラミック基板の走査プロファイルの大きなうねりの上部と下部との差である。 In a connection method for anisotropically conductively connecting a terminal of a ceramic substrate and a terminal of an electronic component,
Applying an anisotropic conductive film on the terminal of the ceramic substrate;
Placing the electronic component on the anisotropic conductive film;
Heating and pressing the electronic component by a heating and pressing member with a pressing force of less than 2 MPa,
The height variation of the ceramic substrate is not less than 20 μm and not more than 40 μm,
The connection method, wherein the anisotropic conductive film contains a radically polymerizable substance, a thermal radical initiator, and conductive particles having an average particle diameter of 13 μm to 30 μm.
Here, the height variation is measured by a surface roughness meter, and is the difference between the upper and lower portions of the large undulation of the scanning profile of the ceramic substrate in the region including the terminal. 異方性導電フィルムが、表面に有機基を有するシリカ粒子を３質量％〜２０質量％含有する請求項１から３のいずれかに記載の接続方法。The connection method according to any one of claims 1 to 3, wherein the anisotropic conductive film contains 3% by mass to 20% by mass of silica particles having an organic group on the surface. 有機基が、ビニル基及びアクリロイル基のいずれかである請求項４に記載の接続方法。The connection method according to claim 4, wherein the organic group is any of a vinyl group and an acryloyl group. セラミック基板が、カメラモジュールである請求項１から５のいずれかに記載の接続方法。The connection method according to any one of claims 1 to 5, wherein the ceramic substrate is a camera module. セラミック基板の端子と、電子部品の端子とを、ラジカル重合性物質と、熱ラジカル開始剤と、平均粒径が１３μｍ以上の導電性粒子とを含有する異方性導電フィルムを熱硬化して異方性導電接続させた接合体であって、Thermosetting of an anisotropic conductive film containing a terminal of a ceramic substrate and a terminal of an electronic component, a radical polymerizable substance, a thermal radical initiator, and conductive particles having an average particle diameter of 13 μm or more A junction with conductive conduction,
前記セラミック基板の高さバラツキが、２０μｍ以上であり、The height variation of the ceramic substrate is 20 μm or more,
前記導電性粒子の平均粒径（μｍ）が、前記セラミック基板の高さバラツキ（μｍ）の３５％〜１００％であることを特徴とする接合体。A bonded body, wherein an average particle diameter (μm) of the conductive particles is 35% to 100% of a height variation (μm) of the ceramic substrate.
ここで、前記高さバラツキは、表面粗さ計によって測定され、端子を含む領域の前記セラミック基板の走査プロファイルの大きなうねりの上部と下部との差である。Here, the height variation is measured by a surface roughness meter, and is the difference between the upper and lower portions of the large undulation of the scanning profile of the ceramic substrate in the region including the terminal. セラミック基板の端子と、電子部品の端子とを、ラジカル重合性物質と、熱ラジカル開始剤と、平均粒径が１３μｍ以上の導電性粒子とを含有する異方性導電フィルムを熱硬化して異方性導電接続させた接合体であって、Thermosetting of an anisotropic conductive film containing a terminal of a ceramic substrate and a terminal of an electronic component, a radical polymerizable substance, a thermal radical initiator, and conductive particles having an average particle diameter of 13 μm or more A junction with conductive conduction,
前記セラミック基板の高さバラツキが、２０μｍ以上であり、The height variation of the ceramic substrate is 20 μm or more,
前記導電性粒子の平均粒径（μｍ）に対する前記セラミック基板の高さバラツキ（μｍ）が、２３／２０〜４０／１５であることを特徴とする接合体。A bonded body, wherein height variation (μm) of the ceramic substrate with respect to an average particle diameter (μm) of the conductive particles is 23/20 to 40/15.
ここで、前記高さバラツキは、表面粗さ計によって測定され、端子を含む領域の前記セラミック基板の走査プロファイルの大きなうねりの上部と下部との差である。Here, the height variation is measured by a surface roughness meter, and is the difference between the upper and lower portions of the large undulation of the scanning profile of the ceramic substrate in the region including the terminal. セラミック基板の端子と、電子部品の端子とを、ラジカル重合性物質と、熱ラジカル開始剤と、平均粒径が１３μｍ以上３０μｍ以下の導電性粒子とを含有する異方性導電フィルムを熱硬化して異方性導電接続させた接合体であって、Thermosetting an anisotropic conductive film containing a terminal of a ceramic substrate and a terminal of an electronic component, a radically polymerizable substance, a thermal radical initiator, and conductive particles having an average particle diameter of 13 μm to 30 μm A junction which is anisotropically conductively connected,
前記セラミック基板の高さバラツキが、２０μｍ以上４０μｍ以下であることを特徴とする接合体。The bonded body characterized in that the height variation of the ceramic substrate is 20 μm or more and 40 μm or less.
ここで、前記高さバラツキは、表面粗さ計によって測定され、端子を含む領域の前記セラミック基板の走査プロファイルの大きなうねりの上部と下部との差である。Here, the height variation is measured by a surface roughness meter, and is the difference between the upper and lower portions of the large undulation of the scanning profile of the ceramic substrate in the region including the terminal. セラミック基板が、カメラモジュールである請求項７から９のいずれかに記載の接合体。The joined body according to any one of claims 7 to 9, wherein the ceramic substrate is a camera module. リペア可能である請求項７から１０のいずれかに記載の接合体。The conjugate according to any one of claims 7 to 10, which is repairable.
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