JP6414334B1 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP6414334B1 JP6414334B1 JP2017529104A JP2017529104A JP6414334B1 JP 6414334 B1 JP6414334 B1 JP 6414334B1 JP 2017529104 A JP2017529104 A JP 2017529104A JP 2017529104 A JP2017529104 A JP 2017529104A JP 6414334 B1 JP6414334 B1 JP 6414334B1
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- light emitting
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- 239000000758 substrate Substances 0.000 claims abstract description 126
- 229910052751 metal Inorganic materials 0.000 claims abstract description 115
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- 230000005012 migration Effects 0.000 claims abstract description 11
- 238000013508 migration Methods 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims description 64
- 239000000919 ceramic Substances 0.000 claims description 57
- 239000000463 material Substances 0.000 description 18
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- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001361 White metal Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000010969 white metal Substances 0.000 description 1
- 239000012463 white pigment Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
既に述べたように、発光素子20に加わる応力が、発光装置の特性に大きく影響する。特に、CSP構造の発光装置は、発光素子20がパッケージ材料と密着する構造であるため、パッケージ材料との線膨張係数との違いや加工時の変形によって、発光素子20に応力が加わりやすい。
支持基板10の上面に電極配線が配置されると、支持基板10による光反射機能が阻害される。このため、平面視で、発光素子20の外側で支持基板10の上面が露出していることが好ましい。
図1では、発光素子20の第2の半導体層23の上面に配置した表面電極80を介して、第2の半導体層23と第2の電極62とを電気的に接続する例を示した。これに対し、図9に示した発光装置では、第2の半導体層23と第2の電極62とを接続する第2の電極配線72が、第2の半導体層23の下面と電気的に接続されている。
上記のように、本発明は実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
Claims (6)
- 支持基板と、
前記支持基板の上に配置された第1金属膜と、
前記第1金属膜の上部の一部に埋め込まれ、側面及び底面を前記第1金属膜に覆われた第2金属膜と、
前記第2金属膜の上面を覆って前記第1金属膜の上に配置された発光素子と
を備え、
前記支持基板はセラミック基板であって、
前記セラミック基板が、
第1のセラミック層と、
前記第1のセラミック層よりも線膨張係数の大きい第2のセラミック層と
を積層した構造を有し、
前記発光素子に近い側に前記第1のセラミック層が配置され、
前記第2金属膜が、前記第1金属膜よりも前記発光素子の出射光に対する反射率が高く、
前記第1金属膜が、前記第2金属膜よりもマイグレーションが発生しにくい
ことを特徴とするCSP構造の発光装置。 - 前記支持基板と前記第1金属膜との間に配置された張り合わせ金属膜を更に備えることを特徴とする請求項1に記載の発光装置。
- 前記発光素子が、第1の半導体層の上方に第2の半導体層を配置した積層構造を有し、
前記第1の半導体層と電気的に接続する第1の電極と、
前記第2の半導体層と電気的に接続する第2の電極と
を更に備え、
平面視で、前記発光素子の下面の全体が前記支持基板に覆われ、前記発光素子の外側に前記第1の電極と前記第2の電極がそれぞれ配置されていることを特徴とする請求項1に記載の発光装置。 - 前記第1の半導体層と前記第1の電極とを電気的に接続する第1の電極配線と、
前記第2の半導体層と前記第2の電極とを電気的に接続する第2の電極配線と
を更に備え、
前記第1の電極配線と前記第2の電極配線が、平面視で前記発光素子の外側に前記支持基板の内部を通過する部分を有し、
前記発光素子の外側で前記支持基板の上面が露出していることを特徴とする請求項3に記載の発光装置。 - 前記第1の電極の上方及び前記第2の電極の上方に前記支持基板の上部の一部が延在していることを特徴とする請求項4に記載の発光装置。
- 前記第2の半導体層と前記第2の電極とが、前記第2の半導体層の上面に配置された表面電極を介して電気的に接続されていることを特徴とする請求項3に記載の発光装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/087787 WO2018116350A1 (ja) | 2016-12-19 | 2016-12-19 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6414334B1 true JP6414334B1 (ja) | 2018-10-31 |
JPWO2018116350A1 JPWO2018116350A1 (ja) | 2018-12-20 |
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ID=62627401
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JP2017529104A Active JP6414334B1 (ja) | 2016-12-19 | 2016-12-19 | 発光装置 |
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JP (1) | JP6414334B1 (ja) |
WO (1) | WO2018116350A1 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007042952A (ja) * | 2005-08-04 | 2007-02-15 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
JP2011166150A (ja) * | 2010-02-11 | 2011-08-25 | Lg Innotek Co Ltd | 発光素子 |
JP2014158001A (ja) * | 2013-02-18 | 2014-08-28 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子およびその製造方法 |
JP2015159203A (ja) * | 2014-02-25 | 2015-09-03 | スタンレー電気株式会社 | 半導体発光装置 |
US20150303352A1 (en) * | 2012-06-08 | 2015-10-22 | Lg Innotek Co., Ltd. | Light-emitting device, light-emitting device package, and light unit |
JP2016207924A (ja) * | 2015-04-27 | 2016-12-08 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
-
2016
- 2016-12-19 JP JP2017529104A patent/JP6414334B1/ja active Active
- 2016-12-19 WO PCT/JP2016/087787 patent/WO2018116350A1/ja active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007042952A (ja) * | 2005-08-04 | 2007-02-15 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
JP2011166150A (ja) * | 2010-02-11 | 2011-08-25 | Lg Innotek Co Ltd | 発光素子 |
US20150303352A1 (en) * | 2012-06-08 | 2015-10-22 | Lg Innotek Co., Ltd. | Light-emitting device, light-emitting device package, and light unit |
JP2014158001A (ja) * | 2013-02-18 | 2014-08-28 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子およびその製造方法 |
JP2015159203A (ja) * | 2014-02-25 | 2015-09-03 | スタンレー電気株式会社 | 半導体発光装置 |
JP2016207924A (ja) * | 2015-04-27 | 2016-12-08 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
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Publication number | Publication date |
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JPWO2018116350A1 (ja) | 2018-12-20 |
WO2018116350A1 (ja) | 2018-06-28 |
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