JP6391171B2 - 半導体製造システムおよびその運転方法 - Google Patents
半導体製造システムおよびその運転方法 Download PDFInfo
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- JP6391171B2 JP6391171B2 JP2015175654A JP2015175654A JP6391171B2 JP 6391171 B2 JP6391171 B2 JP 6391171B2 JP 2015175654 A JP2015175654 A JP 2015175654A JP 2015175654 A JP2015175654 A JP 2015175654A JP 6391171 B2 JP6391171 B2 JP 6391171B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- Chemical & Material Sciences (AREA)
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- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
図1は、第1実施形態の半導体製造システムの構成を示す概略図である。
図6は、第2実施形態の半導体製造システムの構成を示す概略図である。
11:ALD反応炉、12:第1原料ガス供給部、13:第2原料ガス供給部、
14:圧力調整バルブ、15:排気ポンプ、
15a:ケーシング、15b:ロータ、15c:羽根、15d:コーティング膜、
16:トラップ部、17:切り換えバルブ、21:測定部、22:シーケンサ、
23:アルゴンガス供給部、24:窒素ガス供給部、
25、26、27:MFC、28:水分供給部、29:MFC、
31:副生成物、32:欠片
Claims (9)
- ウェハを処理する処理装置と、
前記処理装置から排気ガスを排出する排気ポンプと、
前記排気ポンプの動作を示す値を測定する測定部と、
前記測定部により測定された前記値に基づいて、前記排気ガスにより生成され前記排気ポンプに付着または混入した生成物の欠片を押し出す第1ガス、前記排気ポンプを冷却する第2ガス、前記排気ポンプに付着した前記生成物の特性を変化させる第3ガス、または前記排気ポンプに付着した前記生成物と反応する第4ガスを、前記排気ポンプ内に供給する制御部と、
を備え、
前記排気ポンプは、第1部分と、前記第1部分内で回転し、前記第1部分の内面に対向する外面を有する第2部分とを備え、
前記第2ガスは、前記第1部分の前記内面に付着した前記生成物と、前記第2部分の前記外面に付着した前記生成物とが接触するように、前記排気ポンプを冷却する、
半導体製造システム。 - 前記第1ガスは、前記第1部分の前記内面または前記第2部分の前記外面に付着した前記生成物を前記欠片により削り落とす、請求項1に記載の半導体製造システム。
- 前記第3ガスは、前記第1部分の前記内面または前記第2部分の前記外面に付着した前記生成物の特性を変化させる、請求項1または2に記載の半導体製造システム。
- 前記第4ガスは、前記第1部分の前記内面または前記第2部分の前記外面に付着した前記生成物と反応する、請求項1から3のいずれか1項に記載の半導体製造システム。
- 前記制御部は、前記排気ポンプの動作中に前記第1、第2、または第3ガスを前記排気ポンプ内に供給する、請求項1から4のいずれか1項に記載の半導体製造システム。
- 前記測定部は、前記排気ポンプの回転、電流、音、振動、または温度を示す前記値を測定する、請求項1から5のいずれか1項に記載の半導体製造システム。
- 前記第1、第2、第3、または第4ガスは、前記処理装置と前記排気ポンプとの間の流路に設けられた供給口、または前記排気ポンプの入口と出口との間に設けられた供給口に供給される、請求項1から6のいずれか1項に記載の半導体製造システム。
- さらに、
前記第1、第2、第3、または第4ガスを供給する1台以上のガス供給部と、
前記第1、第2、第3、または第4ガスの流量を調整する1台以上の流量調整部と、
を備える請求項1から7のいずれか1項に記載の半導体製造システム。 - ウェハを処理装置により処理し、
前記処理装置から排気ガスを排気ポンプにより排出し、
前記排気ポンプの動作を示す値を測定部により測定し、
前記測定部により測定された前記値に基づいて、前記排気ガスにより生成され前記排気ポンプに付着または混入した生成物の欠片を押し出す第1ガス、前記排気ポンプを冷却する第2ガス、前記排気ポンプに付着した前記生成物の特性を変化させる第3ガス、または前記排気ポンプに付着した前記生成物と反応する第4ガスを、前記排気ポンプ内に供給する、
ことを含み、
前記排気ポンプは、第1部分と、前記第1部分内で回転し、前記第1部分の内面に対向する外面を有する第2部分とを備え、
前記第2ガスは、前記第1部分の前記内面に付着した前記生成物と、前記第2部分の前記外面に付着した前記生成物とが接触するように、前記排気ポンプを冷却する、
半導体製造システムの運転方法。
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JP2015175654A JP6391171B2 (ja) | 2015-09-07 | 2015-09-07 | 半導体製造システムおよびその運転方法 |
US15/016,730 US20170067153A1 (en) | 2015-09-07 | 2016-02-05 | Semiconductor manufacturing system and method of operating the same |
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JP2015175654A JP6391171B2 (ja) | 2015-09-07 | 2015-09-07 | 半導体製造システムおよびその運転方法 |
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JP2017054850A JP2017054850A (ja) | 2017-03-16 |
JP6391171B2 true JP6391171B2 (ja) | 2018-09-19 |
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US11155916B2 (en) * | 2018-09-21 | 2021-10-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and methods for pumping gases from a chamber |
JP6718566B1 (ja) * | 2019-06-27 | 2020-07-08 | カンケンテクノ株式会社 | 排ガス除害ユニット |
KR102422257B1 (ko) * | 2022-01-25 | 2022-07-18 | 주식회사 윤성이엔지 | 반도체 제조 설비용 가스 배관 |
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