JP6374723B2 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
JP6374723B2
JP6374723B2 JP2014151663A JP2014151663A JP6374723B2 JP 6374723 B2 JP6374723 B2 JP 6374723B2 JP 2014151663 A JP2014151663 A JP 2014151663A JP 2014151663 A JP2014151663 A JP 2014151663A JP 6374723 B2 JP6374723 B2 JP 6374723B2
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lead frame
semiconductor light
light emitting
molded body
resin molded
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JP2016029687A (en
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和之 吉水
和之 吉水
真之 長谷川
真之 長谷川
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Priority to JP2014151663A priority Critical patent/JP6374723B2/en
Priority to US14/753,659 priority patent/US9620685B2/en
Priority to EP15177317.3A priority patent/EP2978031B1/en
Priority to CN201510427078.6A priority patent/CN105304791A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Description

本発明は、半導体発光装置に関するものであり、詳しくは、発光源に半導体発光素子を用いた表面実装型で且つサイドビュー型の半導体発光装置に関する。   The present invention relates to a semiconductor light-emitting device, and more particularly to a surface-mount type and side-view type semiconductor light-emitting device using a semiconductor light-emitting element as a light-emitting source.

従来、この種の半導体発光装置としては、例えば、特許文献１に図１２に示す構成の発光素子パッケージが開示されている。   Conventionally, as this type of semiconductor light emitting device, for example, Patent Document 1 discloses a light emitting element package having a configuration shown in FIG.

開示された発光素子パッケージ１００は、側面１０３及び底面１０４を有する凹部１０２を設けたパッケージ本体１０１と、互いに電気的に分離された第１のリードフレーム１１０及び第２のリードフレーム１２０を備えており、第１のリードフレーム１１０及び第２のリードフレーム１２０はパッケージ本体１０１を貫通すると共に、夫々のリードフレーム１１０、１２０の一端部１１０ａ、１２０ａは凹部１０２の底面１０４に露出し、他端部１１０ｂ、１２０ｂは本体部１０１から突出して突出面１０５に沿って折り曲げられている。   The disclosed light emitting device package 100 includes a package main body 101 provided with a recess 102 having a side surface 103 and a bottom surface 104, and a first lead frame 110 and a second lead frame 120 that are electrically separated from each other. The first lead frame 110 and the second lead frame 120 penetrate the package body 101, and one end portions 110a and 120a of the respective lead frames 110 and 120 are exposed to the bottom surface 104 of the recess 102, and the other end portion 110b. , 120 b protrudes from the main body 101 and is bent along the protruding surface 105.

そして、第１のリードフレーム１１０の一端部１１０ａには発光素子１３０、１３１が載設されて夫々の発光素子１３０、１３１の下部電極（図示せず）と第１のリードフレーム１１０とが電気的に接続されると共に、夫々の発光素子１３０、１３１の上部電極（図示せず）と第２のリードフレーム１２０の一端部１２０ａにボンディングワイヤ１４０、１４１が接続されて、発光素子１３０、１３１の上部電極と第２のリードフレーム１２０とがボンディングワイヤ１４０、１４１を介して電気的に接続されている。   Light emitting elements 130 and 131 are mounted on one end 110a of the first lead frame 110, and the lower electrodes (not shown) of the respective light emitting elements 130 and 131 and the first lead frame 110 are electrically connected. In addition, bonding wires 140 and 141 are connected to upper electrodes (not shown) of the respective light emitting elements 130 and 131 and one end 120a of the second lead frame 120, so that upper portions of the light emitting elements 130 and 131 are connected. The electrode and the second lead frame 120 are electrically connected via bonding wires 140 and 141.

また、第２のリードフレーム１２０の一端部１２０ａにはツェナーダイオード素子１３２が載設されてツェナーダイオード素子１３２の下部電極（図示せず）と第２のリードフレーム１２０とが電気的に接続されると共に、ツェナーダイオード素子１３２の上部電極（図示せず）と第１のリードフレーム１１０の一端部１１０ａにボンディングワイヤ１４２が接続されて、ツェナーダイオード素子１３２の上部電極と第１のリードフレーム１１０とがボンディングワイヤ１４２を介して電気的に接続されている。   In addition, a Zener diode element 132 is mounted on one end 120a of the second lead frame 120, and a lower electrode (not shown) of the Zener diode element 132 and the second lead frame 120 are electrically connected. In addition, a bonding wire 142 is connected to an upper electrode (not shown) of the Zener diode element 132 and one end 110a of the first lead frame 110, and the upper electrode of the Zener diode element 132 and the first lead frame 110 are connected. They are electrically connected via bonding wires 142.

特開２０１３−２１９３５７号公報JP 2013-219357 A

ところで、上記特許文献１の発光素子パッケージ１００においてはその製造方法は、第１のリードフレーム１１０と第２のリードフレーム１２０を一対とする複数対をタイバー（接続部）によって一体化してなる多連のリードフレームを形成し、その多連のリードフレームのインサート成形によって複数個のパッケージを一括形成して夫々のパッケージに発光素子１３０、１３１及びツェナーダイオード素子１３２を実装した後にタイバーを切断して個々の発光素子パッケージ１００に個片化するのが一般的である。   By the way, in the light emitting element package 100 of the said patent document 1, the manufacturing method is the multiple | single_piece which integrates the multiple pairs which make the 1st lead frame 110 and the 2nd lead frame 120 a pair by a tie bar (connection part). The lead frame is formed, a plurality of packages are collectively formed by insert molding of the multiple lead frames, the light emitting elements 130 and 131 and the Zener diode element 132 are mounted on each package, and then the tie bar is cut to individually The light emitting device package 100 is generally separated into individual pieces.

また、上記方法によって製造された発光素子パッケージ１００を実装基板２００に実装するにあたっては、パッケージ本体１０１から突出した、第１のリードフレーム１１０及び第２のリードフレーム１２０の夫々の他端部１１０ｂ、１２０ｂが、実装基板２００に設けられた電極パッド２０１、２０２にはんだ接合される（図１３（基板実装図）参照）。   When the light emitting device package 100 manufactured by the above method is mounted on the mounting substrate 200, the other end portions 110b of the first lead frame 110 and the second lead frame 120 protruding from the package body 101, 120b is soldered to the electrode pads 201 and 202 provided on the mounting board 200 (see FIG. 13 (board mounting diagram)).

その場合、第１のリードフレーム１１０及び第２のリードフレーム１２０の夫々の他端部１１０ｂ、１２０ｂの先端面１１０ｃ、１２０ｃは製造工程における個片化の際のタイバー切断面となっており、はんだの濡れ性を確保するためのメッキ処理が施されていない。   In that case, the front end surfaces 110c and 120c of the other end portions 110b and 120b of the first lead frame 110 and the second lead frame 120 are tie bar cut surfaces at the time of individualization in the manufacturing process. No plating treatment is performed to ensure the wettability.

そのため、実装基板２００の電極パッド２０１、２０２に対する第１のリードフレーム１１０及び第２のリードフレーム１２０の夫々の他端部１１０ｂ、１２０ｂのはんだ接合時の延長方向のアライメントは、第１のリードフレーム１１０及び第２のリードフレーム１２０の夫々の他端部１１０ｂ、１２０ｂの折曲部１１０ｄ、１２０ｄにおけるはんだフィレット１５０、１５１のみで行われ、先端面１１０ｃ、１２０ｃでは、はんだフィレットは形成されない。そのため、該他端部１１０ｂ、１２０ｂの夫々のはんだ接合部におけるはんだ２０３、２０４の量あるいは濡れ状態の違いによって他端部１１０ｂ、１２０ｂのアライメントにズレが生じ、実装基板２００に対する発光素子パッケージ１００の位置精度の低下の不具合要因となる。   Therefore, the first lead frame 110 and the second lead frame 120 with respect to the electrode pads 201 and 202 of the mounting substrate 200 are aligned in the extension direction when soldering the other end portions 110b and 120b of the second lead frame 120. 110 and the second lead frame 120 are performed only by the solder fillets 150 and 151 in the bent portions 110d and 120d of the other end portions 110b and 120b, and no solder fillet is formed on the tip surfaces 110c and 120c. Therefore, misalignment occurs in the alignment of the other end portions 110b and 120b due to the difference in the amount of solder 203 and 204 or the wet state in each solder joint portion of the other end portions 110b and 120b. It becomes a cause of malfunction of the decrease in position accuracy.

そこで、本発明は上記問題に鑑みて創案なされたもので、その目的とするところは、実装基板に対して自動はんだ付けによって実装する際に実装基板の面方向に対して高い位置精度で実装することができ、且つ半導体発光素子の発光時の発熱に対して高い放熱性を有する半導体発光装置を提供することにある。   Therefore, the present invention was devised in view of the above problems, and the object of the present invention is to mount with high positional accuracy with respect to the surface direction of the mounting board when mounting the mounting board by automatic soldering. Another object of the present invention is to provide a semiconductor light emitting device that can perform heat radiation with respect to heat generated during light emission of a semiconductor light emitting element.

上記課題を解決するために、本発明の請求項１に記載された発明は、開口を有する凹部が設けられた樹脂成形体と、一端部側が前記樹脂成形体の内部に埋設され他端部側が前記樹脂成形体の外部に延出された、互いに同一面上に並設された第１リードフレーム及び第２リードフレームを備え、前記凹部の底面に前記第１及び第２のリードフレームの夫々の一端部側の一部が露出して該露出部の前記第１リードフレームに半導体発光素子が実装されると共に、前記樹脂成形体から延出された、前記第１リードフレーム及び第２リードフレームの夫々の他端部側が折り曲げられて前記半導体発光素子の光軸方向で且つ光照射方向と反対方向に向けて延設された折曲延長部を有するサイドビュー型の半導体発光装置であって、前記樹脂成形体は、前記半導体発光素子の光軸方向に垂直な面に沿って延設された前面部、当該前面部の上縁から略垂直に立ち上がって後方に向かって延びる上壁部及び当該前面部の両側縁の夫々から略垂直に立ち上がって後方に向かって延びる一対の側壁部を有しており、前記凹部は、前記半導体発光素子を収容するテーパ状の開口とされ、前記前面部に設けられており、前記第１リードフレームは、前記前面部、上壁部及び一対の側壁部で囲まれた空間部内に位置するとともに、前記凹部の底面に一部が露出する素子実装部と、当該素子実装部の両側から下方に延びる延長脚部を有しており、当該延長脚部に前記第１リードフレームの前記折曲延長部が設けられており、前記第２リードフレームは、前記前面部、上壁部及び一対の側壁部で囲まれた空間部内に位置するとともに、前記凹部の底面に一部が露出し前記半導体発光素子とボンディングワイヤを介して接続する一方の端部と、当該一方の端部から下方に延びた位置に設けられた第２リードフレームの前記折曲延長部を有しており、前記第１リードフレーム及び第２リードフレームは、前記前面部、上壁部及び一対の側壁部で囲まれた空間部内において前記第１リードフレームが前記第２リードフレームの前記一方の端部を前記素子実装部及び前記延長脚部にて略コの字状に覆うと共に前記第２リードフレームを前記延長脚部にて挟んでおり、前記第２リードフレームの一方の端部が前記第１リードフレームの前記素子実装部の下側に位置し、前記第１リードフレームの前記素子実装部及び前記延長脚部と、前記第２リードフレームの一方の端部は、前記凹部内で露出する部分を除いて前記樹脂成形体内に埋設されており、前記前面部の下側から底面に向かって夫々の他端部側が前記樹脂成形体の外側に延出し、当該延出部分が、前記第１リードフレーム及び前記第２リードフレームの夫々の折曲延長部とされ、 前記第２リードフレームの折曲延長部と、該折曲延長部を挟んだ両側に位置する前記第１リードフレームの折曲延長部が互いに平行に並設されており、前記第１リードフレームの幅は、前記第２リードフレームの幅よりも広く形成されており、前記第１リードフレームの前記延長脚部の幅は前記第２リードフレームの幅の２倍以上とされ、前記第１リードフレームの両折曲延長部の夫々には、幅方向において前記樹脂成形体の側壁部側から前記第２リードフレーム側に向かう切欠部が設けられていることを特徴とするものである。 In order to solve the above problems, the invention described in claim 1 of the present invention includes a resin molded body provided with a recess having an opening, and one end side embedded in the resin molded body and the other end side is said extended outside the resin molded article, comprising a first lead frame and the second lead frame which is arranged on the same plane with each other, said bottom surface to said first and second lead frames recess respective A part of the one end side is exposed and a semiconductor light emitting element is mounted on the first lead frame of the exposed portion, and the first lead frame and the second lead frame are extended from the resin molded body. the semiconductor light-emitting device of the side-view type having a bent extension portion extending toward each other end is bent in the opposite direction and the light irradiation direction in a direction of an optical axis of the semiconductor light emitting element, wherein The resin molded body is A front surface portion extending along a surface perpendicular to the optical axis direction of the semiconductor light emitting element, an upper wall portion that rises substantially perpendicularly from an upper edge of the front surface portion and extends rearward, and both side edges of the front surface portion, respectively. A pair of side wall portions that rise substantially perpendicularly and extend rearward, wherein the concave portion is a tapered opening that accommodates the semiconductor light emitting element, and is provided in the front surface portion. One lead frame is located in a space portion surrounded by the front surface portion, the upper wall portion, and the pair of side wall portions, and an element mounting portion that is partially exposed on the bottom surface of the concave portion, and from both sides of the element mounting portion. An extension leg portion extending downward is provided. The extension leg portion is provided with the bent extension portion of the first lead frame. The second lead frame includes the front surface portion, an upper wall portion, and a pair. In the space surrounded by the side wall And a second lead provided at a position where a part of the bottom surface of the recess is exposed and connected to the semiconductor light emitting element via a bonding wire and a position extending downward from the one end. The first lead frame and the second lead frame are arranged in a space surrounded by the front surface portion, the upper wall portion, and the pair of side wall portions. The one end portion of the second lead frame is covered with the element mounting portion and the extension leg portion in a substantially U-shape, and the second lead frame is sandwiched between the extension leg portions. One end of the lead frame is positioned below the element mounting portion of the first lead frame, and the element mounting portion and the extension leg portion of the first lead frame and one of the second lead frames end The portion is embedded in the resin molded body except for the portion exposed in the recess, and the other end side extends from the lower side of the front surface portion toward the bottom surface to the outside of the resin molded body, The extended portion is a bent extension portion of each of the first lead frame and the second lead frame, and is positioned on both sides of the bent extension portion of the second lead frame and the bent extension portion. The bent extension portions of the first lead frame are arranged in parallel to each other, and the width of the first lead frame is wider than the width of the second lead frame. The width of the extension leg portion is not less than twice the width of the second lead frame, and each of the bent extension portions of the first lead frame has a width direction from the side wall portion side of the resin molded body. Toward the second lead frame A notch portion is provided.

また、本発明の請求項２に記載された発明は、請求項１において、前記第１リードフレームの両折曲延長部の夫々の下面及び前記第２リードフレームの折曲延長部の下面はいずれも同一平面上に位置すると共に前記樹脂成形体の最下面に対して同一平面上、あるいはそれよりも上方に位置することを特徴とするものである。 According to a second aspect of the present invention, in the first aspect, any one of the lower surface of each of the bent extension portions of the first lead frame and the lower surface of the bent extension portion of the second lead frame. Is located on the same plane and is located on the same plane or above the lowermost surface of the resin molded body.

また、本発明の請求項３に記載された発明は、請求項１又は請求項２において、前記樹脂成形体には、レンズに設けられた突起部を嵌合する係合凹部が設けられ、レンズの突起部を前記樹脂成形体の係合凹部に嵌合することにより、前記レンズが前記半導体発光素子が実装された凹部を覆うように前記樹脂成形体に装着されていることを特徴とするものである。   According to a third aspect of the present invention, in the first or second aspect of the present invention, the resin molded body is provided with an engagement recess for fitting a protrusion provided on the lens. The lens is mounted on the resin molded body so as to cover the concave portion on which the semiconductor light emitting element is mounted by fitting the projection portion of the lens into the engagement concave portion of the resin molded body. It is.

本発明の半導体発光装置は、一方のリードフレームが他方のリードフレームを挟んで左右対称の形状を有すると共に互いに同一面上に並設されてなる一対のリードフレームを有し、一対のリードフレームの夫々の一端部側が凹部を有する樹脂成形体の内部に埋設されて凹部底面に露出した露出部の一方に半導体発光素子が実装され、他端部側が樹脂成形体から延出して折り曲げられて半導体発光素子の光軸方向で且つ光照射方向と反対方向に向けて延設された折曲延長部を有している。そして、他方のリードフレームの折曲延長部、及び／又は、一方のリードフレームの両折曲延長部の夫々に、幅方向の一端部から幅方向に向かう切欠部が設けられている。   The semiconductor light-emitting device of the present invention has a pair of lead frames in which one lead frame has a symmetrical shape with the other lead frame sandwiched therebetween and is arranged in parallel on the same plane. A semiconductor light-emitting element is mounted on one of the exposed portions exposed at the bottom of the recess embedded in a resin molded body having a recess on one end side, and the other end is extended and bent from the resin molded body to emit semiconductor light. A bending extension portion is provided extending in the optical axis direction of the element and in the direction opposite to the light irradiation direction. And the notch part which goes to the width direction from the one end part of the width direction is provided in each bending extension part of the other lead frame and / or both bending extension parts of one lead frame.

そのため、上記半導体発光装置を自動はんだ付けによって実装基板に実装する際に、実装基板に設けられた電極パッドと切欠部が設けられた折曲延長部とを接合する溶融はんだの表面張力によるセルフアライメントによって自動的に所定の位置に移動して実装基板の面方向に対して高い位置精度で半導体発光装置を実装することができる。   Therefore, when mounting the semiconductor light emitting device on the mounting board by automatic soldering, self-alignment by the surface tension of the molten solder that joins the electrode pad provided on the mounting board and the bent extension part provided with the notch is provided. Thus, the semiconductor light emitting device can be mounted with high positional accuracy with respect to the surface direction of the mounting substrate by automatically moving to a predetermined position.

また、半導体発光素子は発光と同時に発熱を生じる。その場合、半導体発光素子は、一方のリードフレームが他方のリードフレームを挟んで左右対称の形状を有する一対のリードフレームのいずれかに実装されている。そのため、半導体発光素子が実装されたリードフレームにおいては、半導体発光素子から発せられた熱による温度分布は均一化され、温度分布の偏りが抑制される。   Further, the semiconductor light emitting element generates heat simultaneously with light emission. In that case, the semiconductor light emitting element is mounted on one of a pair of lead frames in which one lead frame has a symmetrical shape with the other lead frame in between. Therefore, in the lead frame on which the semiconductor light emitting element is mounted, the temperature distribution due to the heat generated from the semiconductor light emitting element is made uniform, and the uneven temperature distribution is suppressed.

その結果、半導体発光素子から発せられた熱は、温度分布が均一化されて熱抵抗が低減されたリードフレームを介して効率的に外部に逃がされる。これにより、半導体発光素子の発光時の自己発熱を効率良く放熱して半導体発光素子自体の温度上昇を抑制することができる。   As a result, the heat generated from the semiconductor light emitting element is efficiently released to the outside through the lead frame in which the temperature distribution is made uniform and the thermal resistance is reduced. Thereby, the self-heating at the time of light emission of the semiconductor light emitting element can be efficiently radiated to suppress the temperature rise of the semiconductor light emitting element itself.

実施形態の半導体発光装置に係る分解斜視図である。It is a disassembled perspective view which concerns on the semiconductor light-emitting device of embodiment. 実施形態の半導体発光装置に係る正面図である。It is a front view which concerns on the semiconductor light-emitting device of embodiment. レンズを取り外した状態の正面図である。It is a front view of the state which removed the lens. 図２のＡ−Ａ断面図である。It is AA sectional drawing of FIG. 図２のＢ−Ｂ断面図である。It is BB sectional drawing of FIG. リードフレームの配置説明図である。FIG. 7 is an explanatory diagram of lead frame arrangement. 半導体発光装置の基板実装状態を示す正面図である。It is a front view which shows the board | substrate mounting state of a semiconductor light-emitting device. 図７のＣ部拡大図である。It is the C section enlarged view of FIG. 半導体発光装置の基板実装状態を示す断面図である。It is sectional drawing which shows the board | substrate mounting state of a semiconductor light-emitting device. 図９のＤ部拡大図である。It is the D section enlarged view of FIG. 他のリードフレームの配置説明図である。It is arrangement | positioning explanatory drawing of another lead frame. 従来例の説明図である。It is explanatory drawing of a prior art example. 同じく、従来例の説明図である。Similarly, it is explanatory drawing of a prior art example.

以下、この発明の好適な実施形態を図１〜図１１を参照しながら、詳細に説明する（同一部分については同じ符号を付す）。尚、以下に述べる実施形態は、本発明の好適な具体例であるから、技術的に好ましい種々の限定が付されているが、本発明の範囲は、以下の説明において特に本発明を限定する旨の記載がない限り、これらの実施形態に限られるものではない。   Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 11 (the same parts are given the same reference numerals). The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. Unless stated to the effect, the present invention is not limited to these embodiments.

図１は、実施形態の半導体発光装置に係わる分解斜視図、図２は正面図、図３はレンズを取り外した状態の正面図、図４は図２のＡ−Ａ断面図、図５は図２のＢ−Ｂ断面図である。   1 is an exploded perspective view of the semiconductor light emitting device according to the embodiment, FIG. 2 is a front view, FIG. 3 is a front view with a lens removed, FIG. 4 is a cross-sectional view taken along the line AA in FIG. FIG.

実施形態の半導体発光装置１は、本体２と本体２に装着するレンズ３によって構成されている。   The semiconductor light emitting device 1 according to the embodiment includes a main body 2 and a lens 3 attached to the main body 2.

本体２は、樹脂材料からなる樹脂成形体５と、金属板部材からなる第１のリードフレーム３０及び第２のリードフレーム３１と、発光源となる半導体発光素子７を備えており、一対のリードフレーム３０、３１を樹脂材料でインサート成形することにより、半導体発光装置１のパッケージ６が形成されている。   The main body 2 includes a resin molded body 5 made of a resin material, a first lead frame 30 and a second lead frame 31 made of a metal plate member, and a semiconductor light emitting element 7 serving as a light source, and a pair of leads. The package 6 of the semiconductor light emitting device 1 is formed by insert-molding the frames 30 and 31 with a resin material.

パッケージ６を構成する樹脂成形体５は、後述する半導体発光素子７の光軸Ｘの方向に垂直な面に沿って延設された前面部１０、前面部１０の上縁から略垂直に立ち上がって後方（半導体発光素子７の光照射方向と反対方向）に向かって延びる上壁部２０及び前面部１０の両側縁の夫々から略垂直に立ち上がって後方に向かって延びる側壁部２１、２２を有している。   The resin molded body 5 constituting the package 6 rises substantially perpendicularly from the front edge 10 extending along a surface perpendicular to the direction of the optical axis X of the semiconductor light emitting element 7 to be described later, and the upper edge of the front face 10. It has an upper wall portion 20 extending rearward (in a direction opposite to the light irradiation direction of the semiconductor light emitting element 7) and side wall portions 21 and 22 rising substantially vertically from both side edges of the front surface portion 10 and extending rearward. ing.

前面部１０を挟んで互いに対向する側壁部２１、２２は、前面部１０の下面１３よりも下方まで延長されている。つまり、樹脂成形体５は、半導体発光素子７の光照射方向の前方から見ると前面部１０の下面１３と両側壁部２１、２２の夫々の内側面２１ａ、２２ａで囲まれた空間部２５を有している。   The side wall portions 21 and 22 that face each other across the front surface portion 10 extend below the lower surface 13 of the front surface portion 10. That is, the resin molded body 5 has a space portion 25 surrounded by the lower surface 13 of the front surface portion 10 and the inner side surfaces 21a and 22a of the side wall portions 21 and 22 when viewed from the front in the light irradiation direction of the semiconductor light emitting element 7. Have.

前面部１０は、前面側の中央部に半導体発光素子７及びボンディングワイヤ８を収容するテーパ状の収容凹部１１が設けられ、前面側の、前記収容凹部１１を挟んだ両側に、後述するレンズ３に設けられた突起部４２を嵌合する段差状の係合凹部１２が設けられている。   The front surface portion 10 is provided with a tapered housing recess 11 for housing the semiconductor light emitting element 7 and the bonding wire 8 in the center portion on the front surface side, and a lens 3 to be described later on both sides of the housing recess 11 on the front surface side. A step-like engagement recess 12 is provided to fit the protrusion 42 provided on the.

一対のリードフレーム３０、３１は、互いに同一面上に並設されると共に、樹脂成形体５の前面部１０内を上壁部２０側から下方に向かって埋設されて該前面部１０の下面１３から外部に延出され、延出部の下方において略直角に折り曲げられて前面部１０の下面１３に沿って後方に向かって延設されている。   The pair of lead frames 30 and 31 are arranged side by side on the same plane, and are embedded in the front surface portion 10 of the resin molded body 5 from the upper wall portion 20 side downward to the lower surface 13 of the front surface portion 10. Is extended to the outside, is bent substantially at a right angle below the extended portion, and extends rearward along the lower surface 13 of the front surface portion 10.

リードフレーム３０、３１の夫々の、樹脂成形体５の前面部１０内に埋設された部分（インナーリード）３０ａ、３１ａの夫々の一部は、該前面部１０に形成された収容凹部１１の底面に露出しており、前面部１０外に延出された部分（アウターリード）３０ｂ、３１ｂの夫々の一部は、折り曲げられて前面部１０の下面１３に沿って後方に向かって延設された折曲延長部３０ｃ、３１ｃを有している。   Part of each of the lead frames 30 and 31 (inner leads) 30a and 31a embedded in the front surface portion 10 of the resin molded body 5 is the bottom surface of the housing recess 11 formed in the front surface portion 10. Part of each of the portions (outer leads) 30b and 31b that are exposed to the outside of the front surface portion 10 is bent and extended rearward along the lower surface 13 of the front surface portion 10. Bending extensions 30c and 31c are provided.

リードフレーム３０、３１の折曲延長部３０ｃ、３１ｃの夫々の下面３０ｄ、３１ｄは、樹脂成形体５の両側壁部２１、２２の夫々の下端面２１ｂ、２２ｂに対して同一平面上、あるいはそれよりも上方に位置している。   The lower surfaces 30d and 31d of the bent extension portions 30c and 31c of the lead frames 30 and 31 are flush with the lower end surfaces 21b and 22b of the side wall portions 21 and 22 of the resin molded body 5, or the same It is located above.

なお、樹脂成形体５の両側壁部２１、２２の夫々の下端面２１ｂ、２２ｂ同士は同一平面上にあることが好ましい。また、リードフレーム３０、３１の折曲延長部３０ｃ、３１ｃの夫々の下面３０ｄ、３１ｄ同士も同一平面上にあることが好ましい。さらに、樹脂成形体５の両側壁部２１、２２の夫々の下端面２１ｂ、２２ｂ同士が位置する同一平面と、リードフレーム３０、３１の折曲延長部３０ｃ、３１ｃの夫々の下面３０ｄ、３１ｄ同士が位置する同一平面は、互いに平行な平面であることが好ましい。   In addition, it is preferable that each lower end surface 21b, 22b of the both-side wall parts 21 and 22 of the resin molding 5 exists on the same plane. Further, the lower surfaces 30d and 31d of the bent extensions 30c and 31c of the lead frames 30 and 31 are also preferably on the same plane. Furthermore, the same plane in which the lower end surfaces 21b and 22b of the both side walls 21 and 22 of the resin molded body 5 are located, and the lower surfaces 30d and 31d of the bent extensions 30c and 31c of the lead frames 30 and 31, respectively. It is preferable that the same plane in which is located is a plane parallel to each other.

これにより、半導体発光装置１を実装基板に実装する際に、半導体発光装置１の一対のリードフレーム３０、３１のアウターリード３０ｂ、３１ｂの夫々の折曲延長部３０ｃ、３１ｃと実装基板に設けられた電極パッドとの平行度が確実に確保されて互いのはんだ接合における高い接合（実装）信頼性を得ることができる。   Thus, when the semiconductor light emitting device 1 is mounted on the mounting substrate, the bending extensions 30c and 31c of the outer leads 30b and 31b of the pair of lead frames 30 and 31 of the semiconductor light emitting device 1 and the mounting substrate are provided. In addition, the parallelism with the electrode pads is ensured, and high bonding (mounting) reliability in mutual solder bonding can be obtained.

樹脂成形体５の前面部１０に設けられた収容凹部１１内には、該収容凹部１１の底面に露出したインナーリード３０ａ、３１ａの一方３０ａに、発光源となる半導体発光素子７が導電性接合部材(図示せず)を介して実装され、半導体発光素子７の下部電極とリードフレーム３０とが電気的に接続されている。   In the housing recess 11 provided in the front surface portion 10 of the resin molded body 5, the semiconductor light emitting element 7 serving as a light emitting source is conductively bonded to one of the inner leads 30 a and 31 a exposed on the bottom surface of the housing recess 11. It is mounted via a member (not shown), and the lower electrode of the semiconductor light emitting element 7 and the lead frame 30 are electrically connected.

また、一端部が半導体発光素子７の上部電極に接合されたボンディングワイヤ８の他端部がインナーリード３０ａ、３１ａの他方３１ａに接合されて、半導体発光素子７の上部電極とリードフレーム３１がボンディングワイヤ８を介して電気的に接続されている。   Further, the other end of the bonding wire 8 having one end bonded to the upper electrode of the semiconductor light emitting element 7 is bonded to the other 31a of the inner leads 30a and 31a, and the upper electrode of the semiconductor light emitting element 7 and the lead frame 31 are bonded. It is electrically connected via a wire 8.

なお、場合によっては、収容凹部１１内に透光性樹脂が充填されて、半導体発光素子７及びボンディングワイヤ８が樹脂封止される。これにより、透光性樹脂は半導体発光素子７を水分、塵埃及びガス等の外部環境から保護し、且つボンディングワイヤ８を振動及び衝撃等の機械的応力から保護する。また、透光性樹脂は半導体発光素子７の光出射面とで界面を形成し、半導体発光素子７の発光光を半導体発光素子７の光出射面から透光性樹脂内に効率良く出射させる機能も有する。   In some cases, the housing recess 11 is filled with a translucent resin, and the semiconductor light emitting element 7 and the bonding wire 8 are sealed with resin. Thereby, the translucent resin protects the semiconductor light emitting element 7 from an external environment such as moisture, dust and gas, and protects the bonding wire 8 from mechanical stress such as vibration and impact. The translucent resin forms an interface with the light emitting surface of the semiconductor light emitting element 7, and the function of efficiently emitting the emitted light of the semiconductor light emitting element 7 from the light emitting surface of the semiconductor light emitting element 7 into the translucent resin. Also have.

ところで、互いに同一面上に並設された一対のリードフレーム３０、３１は図６（リードフレームの配置説明図）にあるように、ボンディングワイヤ８が接合される第２のリードフレーム３１を囲むように半導体発光素子７が実装される第１のリードフレーム３０が配置されている。第１のリードフレーム３０は、半導体発光素子７が実装される幅広で面積が大きい素子実装部３０ｇと素子実装部３０ｇの両側から延びる延長脚部３０ｅを有している。夫々の延長脚部３０ｅは、第２のリードフレーム３１の両側に第２のリードフレーム３１に沿って平行に延びており、第２のリードフレーム３１よりも幅広に形成されている。   By the way, a pair of lead frames 30 and 31 arranged side by side on the same plane surround the second lead frame 31 to which the bonding wire 8 is joined, as shown in FIG. 6 (lead frame arrangement explanatory diagram). A first lead frame 30 on which the semiconductor light emitting element 7 is mounted is disposed. The first lead frame 30 has a wide and large element mounting part 30g on which the semiconductor light emitting element 7 is mounted, and an extended leg part 30e extending from both sides of the element mounting part 30g. Each extension leg 30 e extends in parallel along the second lead frame 31 on both sides of the second lead frame 31, and is formed wider than the second lead frame 31.

また、第１のリードフレーム３０は第２のリードフレーム３１を挟んで左右対称の形状を呈している。換言すると、第１のリードフレーム３０は該第１のリードフレーム３０の両延長脚部３０ｅの延長方向に沿う中心軸Ｙに対して左右対称の形状を呈している。同時に、第１のリードフレーム３０の両延長脚部３０ｅは、第２のリードフレーム３１を挟んだ両側に該第２のリードフレーム３１に沿って平行に並設されている。   The first lead frame 30 has a symmetrical shape with the second lead frame 31 in between. In other words, the first lead frame 30 has a bilaterally symmetric shape with respect to the central axis Y along the extending direction of the two extended leg portions 30 e of the first lead frame 30. At the same time, both extended leg portions 30 e of the first lead frame 30 are arranged in parallel along the second lead frame 31 on both sides of the second lead frame 31.

第１のリードフレーム３０の素子実装部３０ｇは、樹脂成形体５の前面部１０内に埋設されて前面部１０の面方向の多くの部分を占め（図３参照）、延長脚部３０ｅの夫々は、一部が樹脂成形体５の前面部１０内に埋設されると共にそれ以外の部分が樹脂成形体５から延出されて延出部分に、直角に折り曲げられた折曲延長部３０ｃを有している。そして、両折曲延長部３０ｃの夫々には、幅方向の一端部から幅方向に向かって所定の幅及び所定の長さの切欠部３０ｆが設けられている。なお、第２のリードフレーム３１の、樹脂成形体５から延出された延出部分にも、直角に折り曲げられた折曲延長部３１ｃを有している。   The element mounting portion 30g of the first lead frame 30 is embedded in the front surface portion 10 of the resin molded body 5 and occupies many portions in the surface direction of the front surface portion 10 (see FIG. 3), and each of the extended leg portions 30e. Is partially embedded in the front surface portion 10 of the resin molded body 5, and other portions are extended from the resin molded body 5 and have bent portions 30 c that are bent at right angles at the extended portions. doing. Each bent extension 30c is provided with a notch 30f having a predetermined width and a predetermined length in the width direction from one end in the width direction. Note that the extended portion of the second lead frame 31 that extends from the resin molded body 5 also has a bent extension portion 31 c that is bent at a right angle.

なお、第２のリードフレーム３１は、例えば０．３ｍｍの幅を有し、第１のリードフレーム３０と第２のリードフレーム３１の間の隙間は、第２のリードフレーム３１の幅と同じ０．３ｍｍを有している。これは、金属板からリードフレームの金型抜きを行う場合、前記隙間は第２のリードフレーム３１の幅以上が必要なためである。一方、第１のリードフレーム３０の延長脚部３０ｅの幅は、空間部２５の幅から第２のリードフレーム３１の幅と前記隙間と側壁部２１、２２の夫々の内側面２１ａ、２２ａとの隙間を差し引いた幅分だけ広げることが可能であるが、少なくとも第２のリードフレーム３１の幅の２倍以上になるように設定することが好ましい。   The second lead frame 31 has a width of, for example, 0.3 mm, and the gap between the first lead frame 30 and the second lead frame 31 is 0, which is the same as the width of the second lead frame 31. .3 mm. This is because the gap needs to be larger than the width of the second lead frame 31 when the lead frame is removed from the metal plate. On the other hand, the width of the extended leg portion 30e of the first lead frame 30 is the width of the second lead frame 31 from the width of the space portion 25, the gap, and the inner side surfaces 21a and 22a of the side wall portions 21 and 22, respectively. Although it is possible to increase the width by subtracting the gap, it is preferable to set the width to be at least twice the width of the second lead frame 31.

また、第１のリードフレーム３０の両折曲延長部３０ｃの夫々に設けられた切欠部３０ｆは、幅が第２のリードフレーム３１の幅よりも大きい０．５ｍｍであることが好ましい。但し、切欠部３０ｆの両端部の夫々に第３のはんだフィレット６０ｃが形成される幅であればよい。   Further, it is preferable that the notch 30 f provided in each of the bent extension portions 30 c of the first lead frame 30 has a width of 0.5 mm larger than the width of the second lead frame 31. However, the width may be such that the third solder fillet 60c is formed at each of both end portions of the notch 30f.

一方、レンズ３は、平板状の基台部４０の一方の面の中央部に、長手方向に垂直な断面形状が円弧状のシリンドリカルレンズ部４１が形成され、他方の面の両端部に階段状の突起部４２が設けられている。   On the other hand, in the lens 3, a cylindrical lens portion 41 having a circular cross section perpendicular to the longitudinal direction is formed at the center of one surface of the flat base portion 40, and stepped at both ends of the other surface. The protrusion 42 is provided.

そして、樹脂成形体５の前面部１０に設けられた係合凹部１２にレンズ３に設けられた突起部４２を嵌合して固定することにより、本体２にレンズ３が装着されてなる半導体発光装置１が形成されている。なお、レンズ３は、シリンドリカルレンズ部４１の中心軸Ｚが半導体発光素子７の光軸Ｘ上に位置するように装着されている（図４参照）。   Then, the semiconductor light emitting device in which the lens 3 is mounted on the main body 2 by fitting and fixing the protrusion 42 provided on the lens 3 to the engaging recess 12 provided on the front surface portion 10 of the resin molded body 5. A device 1 is formed. The lens 3 is mounted such that the central axis Z of the cylindrical lens portion 41 is positioned on the optical axis X of the semiconductor light emitting element 7 (see FIG. 4).

図７〜図１０は、上記構成の半導体発光装置１を実装基板５０上に実装したときの状態を示すものであり、そのうち図７は半導体発光装置１を光照射方向から見た図、図８は図７のＣ部詳細図である。また、図９は半導体発光装置１を実装基板５０上に実装したときの状態を示すもので図２のＢ−Ｂ断面の位置における断面図、図１０は図９のＤ部詳細図である。   7 to 10 show states when the semiconductor light-emitting device 1 having the above-described configuration is mounted on the mounting substrate 50. FIG. 7 is a view of the semiconductor light-emitting device 1 viewed from the light irradiation direction, FIG. FIG. 8 is a detailed view of part C in FIG. 7. 9 shows a state when the semiconductor light emitting device 1 is mounted on the mounting substrate 50. FIG. 9 is a cross-sectional view taken along the line BB of FIG. 2, and FIG.

実装基板５０は、予め導体による配線パターンが形成されていると共に、半導体発光装置１を実装する位置に、該半導体発光装置１の第１のリードフレーム３０及び第２のリードフレーム３１の夫々の、樹脂成形体５の下面１３から延出されて折り曲げられた両折曲延長部３０ｃ及び一つの折曲延長部３１ｃに対応する位置に両折曲延長部３０ｃ及び一つの折曲延長部３１ｃに対応する形状寸法の、一対の電極パッド５１ａと一つの電極パッド５１ｂが設けられている。   The mounting substrate 50 is formed with a conductor wiring pattern in advance, and each of the first lead frame 30 and the second lead frame 31 of the semiconductor light emitting device 1 is mounted at a position where the semiconductor light emitting device 1 is mounted. Corresponding to both the folded extensions 30c and one folded extension 31c at a position corresponding to both folded extensions 30c and one folded extension 31c extended from the lower surface 13 of the resin molded body 5 and bent. A pair of electrode pads 51a and one electrode pad 51b having a shape and size to be provided are provided.

この場合、一対の電極パッド５１ａの夫々には、両折曲延長部３０ｃの夫々に設けられた切欠部３０ｆに対応する切欠部５１ｃが設けられており、一対の電極パッド５１ａの夫々は両折曲延長部３０ｃの夫々の外周を所定の大きさだけ拡大したような形状寸法を有している。なお、電極パッド５１ｂも同様に、折曲延長部３１ｃの外周を所定の大きさだけ拡大したような形状寸法を有している。   In this case, each of the pair of electrode pads 51a is provided with a notch 51c corresponding to the notch 30f provided in each of the bent extension portions 30c, and each of the pair of electrode pads 51a is folded in both. Each of the curved extensions 30c has a shape and dimension that is enlarged by a predetermined size. Similarly, the electrode pad 51b has such a shape that the outer periphery of the bent extension portion 31c is enlarged by a predetermined size.

そして、実装基板５０の一対の電極パッド５１ａの夫々と半導体発光装置１の第１のリードフレーム３０の両折曲延長部３０ｃの夫々がはんだ接合されて、互いの機械的及び電気的な接続が図られ、同様に、実装基板５０の電極パッド５１ｂと半導体発光装置１の第２のリードフレーム３１の折曲延長部３１ｃがはんだ接合されて、互いの機械的及び電気的な接続が図られている。   Then, each of the pair of electrode pads 51a of the mounting substrate 50 and each of the bent extension portions 30c of the first lead frame 30 of the semiconductor light emitting device 1 are solder-bonded, and mechanical and electrical connection with each other is achieved. Similarly, the electrode pad 51b of the mounting substrate 50 and the bent extension portion 31c of the second lead frame 31 of the semiconductor light emitting device 1 are soldered to achieve mechanical and electrical connection with each other. Yes.

この場合、実装基板５０の一対の電極パッド５１ａの夫々と半導体発光装置１の第１のリードフレーム３０の両折曲延長部３０ｃの夫々のはんだ接合において、折曲延長部３０ｃの幅方向に対しては両端部に一対の第１のはんだフィレット６０ａが形成され（図８参照）、長手方向に対しては折曲部３０ｈに第２のはんだフィレット６０ｂが形成されると共に切欠部３０ｆの両端部の夫々に第３のはんだフィレット６０ｃが形成される（図１０参照）。   In this case, in each solder joint of each of the pair of electrode pads 51a of the mounting substrate 50 and the both bent extensions 30c of the first lead frame 30 of the semiconductor light emitting device 1, the width of the bent extensions 30c is determined. Thus, a pair of first solder fillets 60a is formed at both ends (see FIG. 8), and a second solder fillet 60b is formed at the bent portion 30h with respect to the longitudinal direction, and both ends of the notch 30f. A third solder fillet 60c is formed in each of these (see FIG. 10).

つまり、第１のリードフレーム３０の、互いに平行に並設された両折曲延長部３０ｃの夫々が一対の電極パッド５１ａの夫々に対して、延長方向及び延長方向に垂直な幅方向のいずれの方向、つまり実装基板５０の面方向の互いに垂直な方向の夫々に対して２箇所以上のはんだフィレットによって接合固定される。   That is, each of the bent extension portions 30c of the first lead frame 30 arranged in parallel to each other is in any of the extension direction and the width direction perpendicular to the extension direction with respect to each of the pair of electrode pads 51a. It is bonded and fixed by two or more solder fillets in each of the directions, that is, the directions perpendicular to the surface direction of the mounting substrate 50.

そのため、実装基板５０にリフローはんだ付けやディップはんだ付け等の自動はんだ付けによって半導体発光装置１を実装する際に、溶融はんだの表面張力によるセルフアライメントによって、一対の電極パッド５１ａに対して互いに平行に並設された両折曲延長部３０ｃの夫々が自動的に所定の位置に移動して固定される。その結果、実装基板５０に対する自動実装によるはんだ接合よって、実装基板５０の面方向に対して高い位置精度で半導体発光装置を実装することができる。   Therefore, when the semiconductor light emitting device 1 is mounted on the mounting substrate 50 by automatic soldering such as reflow soldering or dip soldering, it is parallel to the pair of electrode pads 51a by self-alignment due to the surface tension of the molten solder. Each of the bent extension portions 30c provided side by side is automatically moved to a predetermined position and fixed. As a result, the semiconductor light emitting device can be mounted with high positional accuracy with respect to the surface direction of the mounting substrate 50 by automatic soldering to the mounting substrate 50.

また、半導体発光素子７は発光と同時に発熱を生じる。この場合、半導体発光素子７は、第２のリードフレーム３１を挟んで左右対称の形状を有する第１のリードフレーム３０の素子実装部３０ｇの中央部に実装されている。そのため、第１のリードフレーム３０においては半導体発光素子７から発せられた熱による温度分布は均一化され、温度分布の偏りが抑制される。   The semiconductor light emitting element 7 generates heat simultaneously with light emission. In this case, the semiconductor light emitting element 7 is mounted at the center of the element mounting portion 30g of the first lead frame 30 having a symmetrical shape with the second lead frame 31 in between. Therefore, in the first lead frame 30, the temperature distribution due to the heat generated from the semiconductor light emitting element 7 is made uniform, and the deviation of the temperature distribution is suppressed.

その結果、半導体発光素子７から発せられた熱は、温度分布が均一化されて熱抵抗が低減された第１のリードフレーム３０を介して効率的に外部に逃がされる。   As a result, the heat generated from the semiconductor light emitting element 7 is efficiently released to the outside through the first lead frame 30 in which the temperature distribution is made uniform and the thermal resistance is reduced.

これにより、半導体発光素子７の発光時の自己発熱が効率良く放熱されて半導体発光素子７自体の温度上昇が抑制され、温度上昇に起因する半導体発光素子７の発光効率の低減による発光光量の減少が抑えられると共に、同様に半導体発光装置７の温度上昇に起因する半導体発光素子７の素子劣化による発光寿命の短縮を抑制することができ、その結果、高い信頼性及び適切な照射光量を確保することができる。   Thereby, the self-heating at the time of light emission of the semiconductor light emitting element 7 is efficiently radiated, the temperature rise of the semiconductor light emitting element 7 itself is suppressed, and the amount of emitted light is reduced by the reduction of the light emission efficiency of the semiconductor light emitting element 7 due to the temperature rise. In the same manner, the shortening of the light emission lifetime due to the deterioration of the semiconductor light emitting element 7 due to the temperature rise of the semiconductor light emitting device 7 can be suppressed, and as a result, high reliability and an appropriate irradiation light quantity can be ensured. be able to.

なお、一対のリードフレーム３０、３１は、上記構成に限られるものではなく、ボンディングワイヤ８が接合された第２のリードフレーム３１を囲むように半導体発光素子７が実装された第１のリードフレーム３０が配置されてなる上記構成に対し、例えば図１１（リードフレームの配置説明図）にあるように、第２のリードフレーム３１に半導体発光素子７を実装し、第１のリードフレーム３０にボンディングワイヤ８を接合すると共に、第２のリードクレーム３１を広幅化して第１のリードフレーム３０全体を狭幅化する。同時に、第２のリードフレームに切欠部３１ｆを設ける。   The pair of lead frames 30 and 31 is not limited to the above configuration, and the first lead frame in which the semiconductor light emitting element 7 is mounted so as to surround the second lead frame 31 to which the bonding wire 8 is bonded. For example, the semiconductor light emitting element 7 is mounted on the second lead frame 31 and bonded to the first lead frame 30 as shown in FIG. The wire 8 is joined, and the second lead claim 31 is widened to narrow the entire first lead frame 30. At the same time, the notch 31f is provided in the second lead frame.

これにより、半導体発光装置の基板実装時に、実装基板に設けられた電極パッドと第２のリードフレーム３１に対して対称位置に設けられた第１のリードフレーム３０の両折曲延長部３０ｃとのはんだ接合と、同じく、電極パッドと第２のリードフレーム３１の、切欠部３１ｆが設けられた折曲延長部３１ｃとのはんだ接合によって、実装基板の面に対して高い位置精度で半導体発光装置を実装することができる。   As a result, when the semiconductor light emitting device is mounted on the substrate, the electrode pads provided on the mounting substrate and the two bent extension portions 30c of the first lead frame 30 provided in a symmetrical position with respect to the second lead frame 31. Similarly to the solder bonding, the semiconductor light emitting device can be obtained with high positional accuracy with respect to the surface of the mounting substrate by solder bonding between the electrode pad and the bent extension portion 31c provided with the notch portion 31f of the second lead frame 31. Can be implemented.

また、半導体発光素子７の発光時の発熱は、幅広で熱抵抗が低い第２のリードフレーム３１から外部に逃がされる。そのため、半導体発光素子７の発光時の自己発熱による温度上昇が抑制されて温度上昇に起因する発光寿命の短縮及び発光効率の低下が抑制され、高い信頼性及び適切な照射光量を確保することができる。   Further, heat generated during light emission of the semiconductor light emitting element 7 is released to the outside from the second lead frame 31 which is wide and has low thermal resistance. Therefore, the temperature rise due to self-heating during the light emission of the semiconductor light emitting element 7 is suppressed, the shortening of the light emission lifetime and the decrease in the light emission efficiency due to the temperature rise are suppressed, and high reliability and an appropriate irradiation light amount can be ensured. it can.

なお、レンズ３のレンズ部は、上記シリンドリカルレンズに限られるものではなく、球面あるいは非球面等の、半導体発光装置１に求められる配光特性が得られるようなレンズ形状に設定される。   The lens portion of the lens 3 is not limited to the cylindrical lens, but is set to have a lens shape such as a spherical surface or an aspherical surface that can obtain a light distribution characteristic required for the semiconductor light emitting device 1.

１… 半導体発光装置
２… 本体
３… レンズ
５… 樹脂成形体
６… パッケージ
７… 半導体発光素子
８… ボンディングワイヤ
１０… 前面部
１１… 収容凹部
１２… 係合凹部
１３… 下面
２０… 上壁部
２１… 側壁部
２１ａ… 内側面
２１ｂ… 下端面
２２… 側壁部
２２ａ… 内側面
２２ｂ… 下端面
２５… 空間部
３０… 第１のリードフレーム
３０ａ… インナーリード
３０ｂ… アウターリード
３０ｃ… 折曲延長部
３０ｄ… 下面
３０ｅ… 延長脚部
３０ｆ… 切欠部
３０ｇ… 素子実装部
３０ｈ… 折曲部
３１… 第２のリードフレーム
３１ａ… インナーリード
３１ｂ… アウターリード
３１ｃ… 折曲延長部
３１ｄ… 下面
３１ｆ… 切欠部
４０… 基台部
４１… シリンドリカルレンズ部
４２… 突起部
５０… 実装基板
５１ａ… 電極パッド
５１ｂ… 電極パッド
５１ｃ… 切欠部
６０ａ… 第１のはんだフィレット
６０ｂ… 第２のはんだフィレット
６０ｃ… 第３のはんだフィレット DESCRIPTION OF SYMBOLS 1 ... Semiconductor light-emitting device 2 ... Main body 3 ... Lens 5 ... Resin molding 6 ... Package 7 ... Semiconductor light-emitting element 8 ... Bonding wire 10 ... Front part 11 ... Housing recessed part 12 ... Engaging recessed part 13 ... Lower surface 20 ... Upper wall part 21 Side wall portion 21a ... Inner side surface 21b ... Lower end surface 22 ... Side wall portion 22a ... Inner side surface 22b ... Lower end surface 25 ... Space 30 ... First lead frame 30a ... Inner lead 30b ... Outer lead 30c ... Bending extension 30d ... Lower surface 30e ... Extension leg part 30f ... Notch part 30g ... Element mounting part 30h ... Bending part 31 ... Second lead frame 31a ... Inner lead 31b ... Outer lead 31c ... Bending extension part 31d ... Lower surface 31f ... Notch part 40 ... Base 41 ... Cylindrical lens 42 ... Protrusion 50 ... Mounting substrate 51a ... Electrode pad 51b ... Electrode pad 51c ... Notch 60a ... First solder fillet 60b ... Second solder fillet 60c ... Third solder fillet

Claims (3)

開口を有する凹部が設けられた樹脂成形体と、
一端部側が前記樹脂成形体の内部に埋設され他端部側が前記樹脂成形体の外部に延出された、互いに同一面上に並設された第１リードフレーム及び第２リードフレームを備え、
前記凹部の底面に前記第１及び第２のリードフレームの夫々の一端部側の一部が露出して該露出部の前記第１リードフレームに半導体発光素子が実装されると共に、前記樹脂成形体から延出された、前記第１リードフレーム及び第２リードフレームの夫々の他端部側が折り曲げられて前記半導体発光素子の光軸方向で且つ光照射方向と反対方向に向けて延設された折曲延長部を有するサイドビュー型の半導体発光装置であって、
前記樹脂成形体は、前記半導体発光素子の光軸方向に垂直な面に沿って延設された前面部、当該前面部の上縁から略垂直に立ち上がって後方に向かって延びる上壁部及び当該前面部の両側縁の夫々から略垂直に立ち上がって後方に向かって延びる一対の側壁部を有しており、
前記凹部は、前記半導体発光素子を収容するテーパ状の開口とされ、前記前面部に設けられており、
前記第１リードフレームは、前記前面部、上壁部及び一対の側壁部で囲まれた空間部内に位置するとともに、前記凹部の底面に一部が露出する素子実装部と、当該素子実装部の両側から下方に延びる延長脚部を有しており、当該延長脚部に前記第１リードフレームの前記折曲延長部が設けられており、
前記第２リードフレームは、前記前面部、上壁部及び一対の側壁部で囲まれた空間部内に位置するとともに、前記凹部の底面に一部が露出し前記半導体発光素子とボンディングワイヤを介して接続する一方の端部と、当該一方の端部から下方に延びた位置に設けられた第２リードフレームの前記折曲延長部を有しており、
前記第１リードフレーム及び第２リードフレームは、前記前面部、上壁部及び一対の側壁部で囲まれた空間部内において前記第１リードフレームが前記第２リードフレームの前記一方の端部を前記素子実装部及び前記延長脚部にて略コの字状に覆うと共に前記第２リードフレームを前記延長脚部にて挟んでおり、前記第２リードフレームの一方の端部が前記第１リードフレームの前記素子実装部の下側に位置し、
前記第１リードフレームの前記素子実装部及び前記延長脚部と、前記第２リードフレームの一方の端部は、前記凹部内で露出する部分を除いて前記樹脂成形体内に埋設されており、前記前面部の下側から底面に向かって夫々の他端部側が前記樹脂成形体の外側に延出し、当該延出部分が、前記第１リードフレーム及び前記第２リードフレームの夫々の折曲延長部とされ、
前記第２リードフレームの折曲延長部と、該折曲延長部を挟んだ両側に位置する前記第１リードフレームの折曲延長部が互いに平行に並設されており、
前記第１リードフレームの幅は、前記第２リードフレームの幅よりも広く形成されており、前記第１リードフレームの前記延長脚部の幅は前記第２リードフレームの幅の２倍以上とされ、
前記第１リードフレームの両折曲延長部の夫々には、幅方向において前記樹脂成形体の側壁部側から前記第２リードフレーム側に向かう切欠部が設けられていることを特徴とする半導体発光装置。 A resin molded body provided with a recess having an opening;
A first lead frame and a second lead frame which are arranged on the same plane, one end side of which is embedded in the resin molded body and the other end side is extended to the outside of the resin molded body ;
A part of each of the first and second lead frames is exposed on the bottom surface of the recess, and a semiconductor light emitting element is mounted on the first lead frame of the exposed portion, and the resin molded body The other end side of each of the first lead frame and the second lead frame that is extended from the bent portion is bent so as to extend in the optical axis direction of the semiconductor light emitting element and in the direction opposite to the light irradiation direction. A side-view type semiconductor light emitting device having a curved extension,
The resin molded body includes a front surface portion extending along a surface perpendicular to the optical axis direction of the semiconductor light emitting element, an upper wall portion that rises substantially vertically from the upper edge of the front surface portion and extends rearward, and It has a pair of side wall portions that rise substantially vertically from each of both side edges of the front portion and extend rearward,
The concave portion is a tapered opening that accommodates the semiconductor light emitting element, and is provided in the front surface portion.
The first lead frame is located in a space surrounded by the front surface portion, the upper wall portion, and the pair of side wall portions, and an element mounting portion that is partially exposed on the bottom surface of the recess, and the element mounting portion An extension leg extending downward from both sides, the extension leg being provided with the bent extension of the first lead frame;
The second lead frame is located in a space surrounded by the front surface portion, the upper wall portion, and the pair of side wall portions, and a part of the second lead frame is exposed at the bottom surface of the concave portion via the semiconductor light emitting element and a bonding wire. One end to be connected, and the bent extension portion of the second lead frame provided at a position extending downward from the one end,
In the first lead frame and the second lead frame, the first lead frame connects the one end portion of the second lead frame in the space surrounded by the front surface portion, the upper wall portion, and the pair of side wall portions. The element mounting portion and the extension leg portion are covered in a substantially U-shape, and the second lead frame is sandwiched between the extension leg portions, and one end portion of the second lead frame is the first lead frame. Located on the lower side of the element mounting portion of
The element mounting portion and the extension leg portion of the first lead frame and one end portion of the second lead frame are embedded in the resin molded body except for a portion exposed in the recess, Each of the other end portions extends from the lower side of the front surface toward the bottom surface, and extends to the outside of the resin molded body. The extended portions correspond to the bent extension portions of the first lead frame and the second lead frame, respectively. And
The bent extension portion of the second lead frame and the bent extension portions of the first lead frame located on both sides of the bent extension portion are arranged in parallel with each other;
The width of the first lead frame is formed wider than the width of the second lead frame, and the width of the extension leg portion of the first lead frame is at least twice the width of the second lead frame. ,
Each of the bent extension portions of the first lead frame is provided with a notch portion extending from the side wall portion side of the resin molded body toward the second lead frame side in the width direction. apparatus. 前記第１リードフレームの両折曲延長部の夫々の下面及び前記第２リードフレームの折曲延長部の下面はいずれも同一平面上に位置すると共に前記樹脂成形体の最下面に対して同一平面上、あるいはそれよりも上方に位置することを特徴とする請求項１に記載の半導体発光装置。 The lower surfaces of the two bent extensions of the first lead frame and the lower surface of the bent extension of the second lead frame are both on the same plane and are flush with the lowermost surface of the resin molded body. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is located above or above. 前記樹脂成形体には、レンズに設けられた突起部を嵌合する係合凹部が設けられ、レンズの突起部を前記樹脂成形体の係合凹部に嵌合することにより、前記レンズが前記半導体発光素子が実装された凹部を覆うように前記樹脂成形体に装着されていることを特徴とする請求項１又は請求項２に記載の半導体発光装置。   The resin molding is provided with an engagement recess for fitting a projection provided on the lens, and the lens is fitted to the semiconductor recess by fitting the projection of the lens into the engagement recess of the resin molding. The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting device is attached to the resin molded body so as to cover a concave portion in which the light-emitting element is mounted.
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