JP6374434B2 - 熱硬化性樹脂組成物及び電子部品搭載基板 - Google Patents
熱硬化性樹脂組成物及び電子部品搭載基板 Download PDFInfo
- Publication number
- JP6374434B2 JP6374434B2 JP2016085548A JP2016085548A JP6374434B2 JP 6374434 B2 JP6374434 B2 JP 6374434B2 JP 2016085548 A JP2016085548 A JP 2016085548A JP 2016085548 A JP2016085548 A JP 2016085548A JP 6374434 B2 JP6374434 B2 JP 6374434B2
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- resin composition
- thermosetting resin
- epoxy resin
- electronic component
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229920001187 thermosetting polymer Polymers 0.000 title claims description 64
- 239000011342 resin composition Substances 0.000 title claims description 53
- 239000000758 substrate Substances 0.000 title description 10
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- 229920000647 polyepoxide Polymers 0.000 claims description 46
- 125000003700 epoxy group Chemical group 0.000 claims description 37
- 239000000945 filler Substances 0.000 claims description 28
- -1 hemiacetal ester Chemical class 0.000 claims description 23
- 239000003795 chemical substances by application Substances 0.000 claims description 16
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 claims description 16
- 229920001289 polyvinyl ether Polymers 0.000 claims description 13
- 229920000877 Melamine resin Polymers 0.000 claims description 11
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 11
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 claims description 11
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 11
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 230000001186 cumulative effect Effects 0.000 claims description 5
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- 230000002194 synthesizing effect Effects 0.000 claims description 3
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- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 10
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- 239000012190 activator Substances 0.000 description 4
- 230000001588 bifunctional effect Effects 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
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- 239000002184 metal Substances 0.000 description 4
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- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 4
- ZEYHEAKUIGZSGI-UHFFFAOYSA-N 4-methoxybenzoic acid Chemical compound COC1=CC=C(C(O)=O)C=C1 ZEYHEAKUIGZSGI-UHFFFAOYSA-N 0.000 description 3
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- XDZMPRGFOOFSBL-UHFFFAOYSA-N 2-ethoxybenzoic acid Chemical compound CCOC1=CC=CC=C1C(O)=O XDZMPRGFOOFSBL-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
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- 125000002723 alicyclic group Chemical group 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
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- 150000002763 monocarboxylic acids Chemical class 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
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- 150000003839 salts Chemical class 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
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- HIYIGPVBMDKPCR-UHFFFAOYSA-N 1,1-bis(ethenoxymethyl)cyclohexane Chemical compound C=COCC1(COC=C)CCCCC1 HIYIGPVBMDKPCR-UHFFFAOYSA-N 0.000 description 1
- CYIGRWUIQAVBFG-UHFFFAOYSA-N 1,2-bis(2-ethenoxyethoxy)ethane Chemical compound C=COCCOCCOCCOC=C CYIGRWUIQAVBFG-UHFFFAOYSA-N 0.000 description 1
- GNUGVECARVKIPH-UHFFFAOYSA-N 2-ethenoxypropane Chemical compound CC(C)OC=C GNUGVECARVKIPH-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
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- 238000001879 gelation Methods 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical group [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
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- 239000011135 tin Substances 0.000 description 1
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- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
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- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/4007—Curing agents not provided for by the groups C08G59/42 - C08G59/66
- C08G59/4014—Nitrogen containing compounds
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- C—CHEMISTRY; METALLURGY
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G59/14—Polycondensates modified by chemical after-treatment
- C08G59/1433—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K3/36—Silica
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/386—Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/24—Di-epoxy compounds carbocyclic
- C08G59/245—Di-epoxy compounds carbocyclic aromatic
-
- C—CHEMISTRY; METALLURGY
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10954—Other details of electrical connections
- H05K2201/10977—Encapsulated connections
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/085—Using vacuum or low pressure
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
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- H05K2203/1178—Means for venting or for letting gases escape
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1189—Pressing leads, bumps or a die through an insulating layer
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Description
[1]
液状のエポキシ樹脂と、
モノカルボン酸及びポリビニルエーテルが合成されてなるヘミアセタールエステルと、
硬化剤と、
フィラーと、
を含む、熱硬化性樹脂組成物。
[2]
前記ヘミアセタールエステルは、前記エポキシ樹脂のエポキシ基に対し0.2〜0.4当量のモノカルボン酸と、前記モノカルボン酸のカルボキシル基に対し1.0〜1.5当量のポリビニルエーテルとが合成されてなる、[1]に記載の熱硬化性樹脂組成物。
[3]
前記硬化剤は、シアノグアニジンとメラミンとを含む、[1]又は[2]に記載の熱硬化性樹脂組成物。
[4]
前記硬化剤は、前記エポキシ樹脂のエポキシ基に対し0.4〜0.5当量のシアノグアニジンと、前記エポキシ基に対し0.08〜0.18当量のメラミンとを含む、[1]〜[3]のいずれかに記載の熱硬化性樹脂組成物。
[5]
前記フィラーは、平均粒子径が0.5〜5μmの球状フィラーを10〜40質量%含む、[1]〜[4]のいずれかに記載の熱硬化性樹脂組成物。
[6]
前記フィラーに含まれる0.3μm以下の微粒子の累積含有率が前記フィラーの全量の10質量%以下である、[1]〜[5]のいずれかに記載の熱硬化性樹脂組成物。
[7]
220〜260℃、10〜20秒のリフロー後における前記エポキシ樹脂中のエポキシ基の反応率が40%以下である、[1]〜[6]のいずれかに記載の熱硬化性樹脂組成物。
[8]
回路基板と、
前記回路基板上に実装された電子部品と、
前記回路基板と前記電子部品との間に設けられた、[1]〜[7]のいずれかに記載の熱硬化性樹脂組成物を熱硬化して得られる硬化物と、
を備える電子部品搭載基板。
1)ヘミアセタールエステルの解離反応によるカルボン酸の生成
2)はんだや銅の酸化膜(金属酸化物)とカルボン酸の反応
3)カルボン酸とエポキシ樹脂の反応
4)カルボン酸と熱硬化剤との造塩反応
5)カルボン酸金属塩とエポキシ樹脂の反応
6)エポキシ樹脂と熱硬化剤の反応
リフロー後のエポキシ樹脂の反応率を40%以下にするため、本実施形態に係る熱硬化性樹脂組成物は、液状のエポキシ樹脂と、モノカルボン酸及びポリビニルエーテルが配合されてなるヘミアセタールエステルと、硬化剤と、フィラーと、を含む。以下、本実施形態に係る熱硬化性樹脂組成物に含まれる各成分の詳細について説明する。
次に、本実施形態に係る熱硬化性樹脂組成物が適用される表面実装方法について説明する。
以下、本発明を実施例及び比較例を用いてより具体的に説明する。本発明は、以下の実施例によって何ら限定されるものではない。
表1、2に示すヘミアセタールエステルは下記のように合成した。
エトキシ安息香酸(当量166、沸点315℃)25.34質量部(エポキシ樹脂のエポキシ基に対して0.29当量に相当)とシクロヘキサンジメタノールジビニルエーテル(当量88、沸点310℃)18.13重量部(エトキシ安息香酸のカルボキシル基に対して1.35当量に相当)を混合し、80℃で10時間撹拌反応させた。反応終了後、反応物のFT−IR測定を行い、カルボキシル基の吸収が消失したことを確認した。
メトキシ安息香酸(当量152、沸点200℃)24.00質量部(エポキシ樹脂のエポキシ基に対して0.30当量に相当)とトリエチレングリコールジビニルエーテル(当量101、沸点220℃)21.53質量部(メトキシ安息香酸のカルボキシル基に対して1.35当量に相当)を用いた以外は合成例1と同様に反応させ、反応物のFT−IR測定を行い、カルボキシル基の吸収が消失したことを確認した。
2官能カルボン酸であるセバシン酸(当量101、沸点386℃)15.95質量部(エポキシ樹脂のエポキシ基に対して0.30当量に相当)とモノビニルエーテルであるイソプロピルモノビニルエーテル(当量86、沸点55℃)18.33質量部(メトキシ安息香酸のカルボキシル基に対して1.35当量に相当)を用いた以外は合成例1と同様に反応させ、反応物のFT−IR測定を行い、カルボキシル基の吸収が消失したことを確認した。
熱硬化性樹脂組成物の評価のため、回路基板1として接続ランドを設けた回路基板(30mm角、厚さ0.4mm、接続ランド数196、接続ランドピッチ300μm、接続ランド表面処理はニッケル−金メッキ)を用い、電子部品として試験用TEGチップ(4.2mm角、厚さ0.4mm、バンプ数196、バンプピッチ300μm、はんだ種は錫96.5質量%と銀3.0質量%と銅0.5質量%の合金)を用いた。また、導通試験のため、回路基板と評価用TEGチップはディジーチェーン回路を構成した。
回路基板のランド部に、ディスペンサーを用いて実施例及び比較例の熱硬化性樹脂組成物を3mg塗布した。その上に評価用TEGチップを載せ、リフロー装置(プリヒート120〜140℃、60秒、昇温140〜220℃、8秒、リフロー220〜260℃、12秒)を用いてはんだ付けを行った。はんだ付け終了後、ホットプレート付きの真空チャンバーを用いて、120℃に加熱して、真空操作(到達真空度100kPa、15分)を行った。真空操作後、真空チャンバーから取り出し、乾燥機を用いて、160℃で2時間加熱して硬化し、TEG実装基板を得た。
上記のようにして得られたTEG実装基板について、表1、2に示すように、ボイド(後脱泡性)、硬化性、はんだ接続性、低硬化収縮性の観点から評価した。下記に各評価の評価方法と判定基準を示す。
ボイドの確認は、実装基板のTEGチップを熱硬化性樹脂の硬化物が現れるまで琢磨機で削り、20倍の顕微鏡を用いて目視で観察した。ボイドが全く無いものを◎とし、ボイドの大きさがバンプ間距離の半分である75μm以下の物が3個以下のものを○とし、ボイドの大きさが75μmを超えたもの、及び4個以上のボイドのあるものを×とした。
硬化性は、上記と同じ回路基板に2mm角の開口を持つ150Meshのスクリーン板を用いて約50μの厚さで印刷し、上記と同じ条件で硬化した熱硬化性樹脂組成物について、JIS K 5600−5−4引っかき硬度(鉛筆法)に準じて測定し、鉛筆硬度が2H以上で、更にその測定塗膜を再度160℃で1時間加熱し、加熱後に鉛筆の傷に変化(だれや消失)がないものを○とし、鉛筆硬度がH以下、または再加熱によって鉛筆の傷が変化したものを×とした。
はんだ接続性は、実装基板に施されたディジーチェーン回路を用いて導通試験を行い、導通しているものを○とし、導通していないものを×とした。
低硬化収縮性は、評価用TEGチップを実装した回路基板について、断面を削りだし、50倍の顕微鏡で断面を観察し、断面が完全に充填されているものを○とし、回路基板側またはTEGチップ側に隙間があるものを×とした。
試験前の熱硬化性樹脂組成物のFT−IRチャートにおいて、1508cm−1にあるベンゼン環の吸収ピークの強度に対する910cm−1のあるエポキシ基の吸収ピークの比と、リフロー後の熱硬化性樹脂組成物のFT−IRチャートのベンゼン環とエポキシ基の吸収ピークの強度比からエポキシ基の反応率を算出した。
実施例は、総じて、ボイドが少なく、後脱泡性に優れることが確認された。特に、1)液状のエポキシ樹脂と、2)エポキシ樹脂のエポキシ基に対し0.2〜0.4当量のモノカルボン酸(安息香酸)と、前記モノカルボン酸のカルボキシル基に対し1.0〜1.5当量のポリビニルエーテルとが合成されてなるヘミアセタールエステルと、3)エポキシ樹脂のエポキシ基に対し0.4〜0.5当量のシアノグアニジンと、エポキシ基に対し0.08〜0.18当量のメラミンとを含む硬化剤と、4)平均粒子径が0.5〜5μmの球状フィラーを10〜40質量%含み、5)フィラーに含まれる0.3μm以下の微粒子の累積含有率が前記フィラーの全量の10質量%以下であって、6)220〜260℃、10〜20秒のリフロー後におけるエポキシ樹脂中のエポキシ基の反応率が40%以下である、実施例1〜16は、表1に列挙した全ての評価試験において高い評価が得られた。
実施例17では、カルボン酸がエポキシ基に消費され、酸化膜除去性が不十分となった。
実施例18では、カルボン酸とエポキシ基が反応し、硬化に必要なエポキシ基が不十分となった。
実施例19では、硬化剤が不足した。
実施例20では、リフロー時の反応が進みゲル化した。
実施例21では、硬化剤が不足し硬化不十分となった。
実施例22では、リフロー時の反応が進みゲル化した。また、樹脂がはんだ溶融前に固化し接続不可となった。
実施例23では、硬化後の断面観察でTEG側に隙間が発生した。
実施例24では、組成物の粘度が上昇し、後脱泡不可、粒子がはんだの濡れ性を阻害し、接続不良となった。
実施例25では、組成物の粘度が上昇し、後脱泡不可となった。
実施例26では、大粒子がはんだの濡れ性を阻害し接続不良となった。
実施例27では、組成物の粘度が上昇し、後脱泡不可となった。
実施例28〜31では、リフロー時の反応が進みゲル化した。はんだ溶融前に固化し接続不可となった。
比較例1は、カルボン酸として2官能のセバシン酸を使用したが、リフローの加熱によってエポキシ樹脂の3次元硬化が進行したためはんだ接続性が阻害され、更に脱泡性が低下してボイドが多量に残った。
比較例2は、フィラーを加えていないため、硬化収縮が大きくなりアンダーフィルとTEGチップの剥離が発生した。
Claims (6)
- 液状のエポキシ樹脂と、
モノカルボン酸及びポリビニルエーテルが合成されてなるヘミアセタールエステルと、
硬化剤と、
フィラーと、
を含み、
前記硬化剤は、シアノグアニジンとメラミンとを含む、
熱硬化性樹脂組成物。 - 前記ヘミアセタールエステルは、前記エポキシ樹脂のエポキシ基に対し0.2〜0.4当量のモノカルボン酸と、前記モノカルボン酸のカルボキシル基に対し1.0〜1.5当量のポリビニルエーテルとが合成されてなる、請求項1に記載の熱硬化性樹脂組成物。
- 前記硬化剤は、前記エポキシ樹脂のエポキシ基に対し0.4〜0.5当量のシアノグアニジンと、前記エポキシ基に対し0.08〜0.18当量のメラミンとを含む、請求項1又は2に記載の熱硬化性樹脂組成物。
- 前記フィラーは、平均粒子径が0.5〜5μmの球状フィラーを10〜40質量%含む、請求項1〜3のいずれか一項に記載の熱硬化性樹脂組成物。
- 前記フィラーに含まれる0.3μm以下の微粒子の累積含有率が前記フィラーの全量の10質量%以下である、請求項1〜4のいずれか一項に記載の熱硬化性樹脂組成物。
- 回路基板と、
前記回路基板上に実装された電子部品と、
前記回路基板と前記電子部品との間に設けられた、請求項1〜5のいずれか1項に記載の熱硬化性樹脂組成物を熱硬化して得られる硬化物と、
を備える電子部品搭載基板。
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US15/479,457 US10870725B2 (en) | 2016-04-21 | 2017-04-05 | Heat curable resin composition, and circuit board with electronic component mounted thereon |
TW106112414A TWI629308B (zh) | 2016-04-21 | 2017-04-13 | Thermosetting resin composition and electronic component mounting substrate |
CN201710259355.6A CN107304282B (zh) | 2016-04-21 | 2017-04-19 | 热固性树脂组合物及搭载有电子部件的基板 |
DE102017108256.5A DE102017108256B4 (de) | 2016-04-21 | 2017-04-19 | Wärmehärtbare harzzusammensetzung |
KR1020170050743A KR101900602B1 (ko) | 2016-04-21 | 2017-04-20 | 열경화성 수지 조성물 및 전자 부품 탑재 기판 |
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JPS60262430A (ja) | 1984-06-08 | 1985-12-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
WO2002006399A1 (fr) * | 2000-07-18 | 2002-01-24 | Kyocera Chemical Corporation | Composition de resine epoxyde ignifuge exempte d'halogenes, composition de resine epoxyde ignifuge exempte d'halogenes pour panneaux multicouches, preimpregnes, stratifies plaques cuivre, cartes a circuits imprimes, films de resine avec feuille ou supports de cuivre, et stratifies et panneaux multicouches |
JP2004152936A (ja) | 2002-10-30 | 2004-05-27 | Tamura Kaken Co Ltd | 回路基板はんだ付用フラックス、ソルダーペースト及び回路基板 |
JP2004155919A (ja) | 2002-11-07 | 2004-06-03 | Nof Corp | 分岐状ポリヘミアセタールエステル樹脂、その製造方法及び用途 |
JP4620967B2 (ja) * | 2004-04-26 | 2011-01-26 | 太陽ホールディングス株式会社 | 永久穴埋め用熱硬化性樹脂組成物 |
JP2012131903A (ja) | 2010-12-21 | 2012-07-12 | Nitto Denko Corp | 半導体封止用エポキシ樹脂組成物およびそれを用いてなる半導体装置 |
JP5467469B2 (ja) * | 2011-01-04 | 2014-04-09 | 山栄化学株式会社 | プリント配線基板に表面実装する方法 |
JP5682470B2 (ja) * | 2011-06-16 | 2015-03-11 | 日立化成株式会社 | 電子部品用樹脂組成物及び電子部品装置 |
EP3085751B1 (en) | 2013-12-16 | 2020-02-26 | Sumitomo Seika Chemicals CO. LTD. | Epoxy resin adhesive agent |
TW201625708A (zh) | 2014-10-10 | 2016-07-16 | Mitsubishi Chem Corp | 半導體元件之製造方法 |
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CN107304282B (zh) | 2019-08-27 |
CN107304282A (zh) | 2017-10-31 |
DE102017108256B4 (de) | 2024-01-18 |
KR101900602B1 (ko) | 2018-09-19 |
TW201738312A (zh) | 2017-11-01 |
DE102017108256A1 (de) | 2017-10-26 |
JP2017193664A (ja) | 2017-10-26 |
US10870725B2 (en) | 2020-12-22 |
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