JP6349036B2 - 発光素子の製造方法 - Google Patents
発光素子の製造方法 Download PDFInfo
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- JP6349036B2 JP6349036B2 JP2017530935A JP2017530935A JP6349036B2 JP 6349036 B2 JP6349036 B2 JP 6349036B2 JP 2017530935 A JP2017530935 A JP 2017530935A JP 2017530935 A JP2017530935 A JP 2017530935A JP 6349036 B2 JP6349036 B2 JP 6349036B2
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- 238000000034 method Methods 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000002245 particle Substances 0.000 claims description 52
- 238000005530 etching Methods 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 37
- 238000000605 extraction Methods 0.000 claims description 28
- 229920005989 resin Polymers 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 17
- 229910052594 sapphire Inorganic materials 0.000 claims description 15
- 239000010980 sapphire Substances 0.000 claims description 15
- 229910010272 inorganic material Inorganic materials 0.000 claims description 9
- 239000011147 inorganic material Substances 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 104
- 239000000463 material Substances 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 24
- 238000005253 cladding Methods 0.000 description 20
- 239000007789 gas Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Description
図2に示すように、基板12の第1主面12aの上に半導体積層構造14を形成する。まず、基板12の第1主面12aの上に、テンプレート層16、n型クラッド層18、活性層20、p型クラッド層22、p型コンタクト層24を順に積層させる。これらの層は、有機金属化学気相成長(MOVPE)法や、分子線エピタキシ(MBE)法などの周知のエピタキシャル成長法を用いて形成できる。
以下に、実施例に基づいて本実施の形態を詳細に説明するが、本発明はこれらの実施例により何ら限定されるものではない。
Claims (6)
- 発光素子の光取り出し面となる主面をエッチングして凹凸構造を形成する工程を備え、前記凹凸構造を形成する工程は、
前記主面上に粒子状の無機材料を含む第1樹脂層を形成し、前記第1樹脂層の上からドライエッチングにより前記第1樹脂層および前記発光素子を第1エッチングする工程と、
前記第1エッチングされた前記主面上に、前記第1樹脂層と異なる粒子状の無機材料を含む第2樹脂層を形成し、前記第2樹脂層の上からドライエッチングにより前記第2樹脂層および前記発光素子を第2エッチングする工程と、を含むことを特徴とする発光素子の製造方法。 - 前記第2樹脂層に含まれる粒子状の無機材料は、前記第1樹脂層に含まれる粒子状の無機材料よりも粒子径が小さいことを特徴とする請求項1に記載の発光素子の製造方法。
- 前記第2樹脂層に含まれる粒子状の無機材料の含有率は、前記第1樹脂層に含まれる粒子状の無機材料の含有率と異なることを特徴とする請求項1または2に記載の発光素子の製造方法。
- 前記凹凸構造の上に残留する前記第1樹脂層および前記第2樹脂層の少なくとも一方を除去する工程をさらに備えることを特徴とする請求項1から3のいずれか一項に記載の発光素子の製造方法。
- 前記発光素子は、前記凹凸構造を通じて紫外光を外部に出力するよう構成される請求項1から4のいずれか一項に記載の発光素子の製造方法。
- 前記発光素子は、サファイア基板を備え、
前記凹凸構造は、前記サファイア基板の一主面に形成されることを特徴とする請求項1から5のいずれか一項に記載の発光素子の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2015149795 | 2015-07-29 | ||
JP2015149795 | 2015-07-29 | ||
PCT/JP2016/072326 WO2017018507A1 (ja) | 2015-07-29 | 2016-07-29 | 発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2017018507A1 JPWO2017018507A1 (ja) | 2017-11-16 |
JP6349036B2 true JP6349036B2 (ja) | 2018-06-27 |
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JP2017530935A Active JP6349036B2 (ja) | 2015-07-29 | 2016-07-29 | 発光素子の製造方法 |
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JP (1) | JP6349036B2 (ja) |
KR (1) | KR20180018700A (ja) |
CN (1) | CN108886075B (ja) |
TW (1) | TW201712890A (ja) |
WO (1) | WO2017018507A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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EP3989281A4 (en) * | 2019-06-21 | 2023-01-25 | LG Electronics Inc. | DISPLAY DEVICE USING A MICRO-LED AND METHOD FOR MAKING IT |
CN114023856B (zh) * | 2021-09-30 | 2024-07-19 | 厦门士兰明镓化合物半导体有限公司 | 发光二极管及其制造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US6228538B1 (en) * | 1998-08-28 | 2001-05-08 | Micron Technology, Inc. | Mask forming methods and field emission display emitter mask forming methods |
JP2007019318A (ja) * | 2005-07-08 | 2007-01-25 | Sumitomo Chemical Co Ltd | 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法 |
US20100310828A1 (en) * | 2007-11-16 | 2010-12-09 | Ulvac, Inc. | Substrate processing method and substrate processed by this method |
KR101062282B1 (ko) * | 2009-03-05 | 2011-09-05 | 우리엘에스티 주식회사 | 질화물계 발광소자 및 그 제조방법 |
JP5446387B2 (ja) * | 2009-03-31 | 2014-03-19 | ソニー株式会社 | 反射防止構造体の製造方法および固体撮像装置の製造方法 |
JP5767796B2 (ja) * | 2010-09-28 | 2015-08-19 | 林純薬工業株式会社 | エッチング液組成物およびエッチング方法 |
KR20120100193A (ko) * | 2011-03-03 | 2012-09-12 | 서울옵토디바이스주식회사 | 발광 다이오드 칩 |
KR101969334B1 (ko) * | 2011-11-16 | 2019-04-17 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 발광 장치 |
US9515223B2 (en) * | 2012-08-21 | 2016-12-06 | Oji Holdings Corporation | Semiconductor light emitting device substrate including an uneven structure having convex portions, and a flat surface therebetween |
JP6153734B2 (ja) * | 2013-01-23 | 2017-06-28 | スタンレー電気株式会社 | 光源装置 |
TWI543395B (zh) * | 2013-04-01 | 2016-07-21 | 中國砂輪企業股份有限公司 | 圖案化光電基板及其製作方法 |
-
2016
- 2016-07-29 JP JP2017530935A patent/JP6349036B2/ja active Active
- 2016-07-29 TW TW105124093A patent/TW201712890A/zh unknown
- 2016-07-29 WO PCT/JP2016/072326 patent/WO2017018507A1/ja active Application Filing
- 2016-07-29 KR KR1020187000999A patent/KR20180018700A/ko not_active Application Discontinuation
- 2016-07-29 CN CN201680023860.4A patent/CN108886075B/zh active Active
Also Published As
Publication number | Publication date |
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TW201712890A (zh) | 2017-04-01 |
JPWO2017018507A1 (ja) | 2017-11-16 |
CN108886075B (zh) | 2021-07-13 |
CN108886075A (zh) | 2018-11-23 |
WO2017018507A1 (ja) | 2017-02-02 |
KR20180018700A (ko) | 2018-02-21 |
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