JP6347940B2 - 半導体装置及び表示装置 - Google Patents
半導体装置及び表示装置Info
- Publication number
- JP6347940B2 JP6347940B2 JP2013244466A JP2013244466A JP6347940B2 JP 6347940 B2 JP6347940 B2 JP 6347940B2 JP 2013244466 A JP2013244466 A JP 2013244466A JP 2013244466 A JP2013244466 A JP 2013244466A JP 6347940 B2 JP6347940 B2 JP 6347940B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductive layer
- insulating layer
- transistor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
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Images
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/044—Physical layout, materials not provided for elsewhere
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/06—Handling electromagnetic interferences [EMI], covering emitted as well as received electromagnetic radiation
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- Semiconductor Integrated Circuits (AREA)
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Description
1.実施の形態1(本発明の一態様に関する基本構成について)
2.実施の形態2(表示装置の各構成について)
3.実施の形態3(表示装置の各構成の変形例について)
4.実施の形態4(タッチパネルの構成)
5.実施の形態5(タッチパネルの変形例について)
6.実施の形態6(画素回路構成バリエーション)
7.実施の形態7(電子機器)
8.実施の形態8(成膜方法)
本実施の形態では、本発明の一態様の表示装置について、図1、図2、図3、図49、図51及び図52を用いて説明を行う。
本実施の形態では、上記実施の形態で説明した保護回路を有する、横電界方式の液晶素子を用いる表示装置(液晶表示装置ともいう)の構成について説明する。横電界方式の液晶表示装置は、縦電界方式よりも広い視野角を得ることができるため、近年、モバイル機器等の表示装置として、様々な画面サイズの液晶表示装置に採用されている。
図4は、液晶表示装置500の構成の一例を示す平面模式図である。
次いで画素518の構成例について説明する。図5(A)は画素の構成例を示す平面図であり、図5(B)は平面図の一部に対応する回路図である。
次いで保護回路511の構成例について説明する。図7(A)は画素の構成例を示す平面図であり、図7(B)は平面図に対応する回路図である。
次いで異なる層に設けられる導電層同士を接続する接続部の構成例について説明する。図9(A)は導電層571と導電層572との接続部についての構成例を示す断面図である。また、図9(B)は導電層572と導電層573との接続部についての構成例を示す断面図である。
次いで端子部505の構成例について説明する。図10は端子部505とFPC506との接続部についての構成例を示す断面図である。
以下、上述したトランジスタ522を含む、表示装置のトランジスタの作製方法を示す。
次に、図14(A)乃至図17(B)を参照して、基板521上に、画素部581、保護回路582及び接続部583を作製する工程を説明する。
本実施の形態では、上記実施の形態2で説明した、横電界方式の液晶表示装置の各構成についての変形例について説明する。
図18に示すように導電層526がトランジスタ522に重畳するよう設ける構成としてもよい。
次いで保護回路511の変形例について説明する。図19(A)は保護回路の構成例を示す平面図であり、図19(B)は図19(A)の切断線B3−B4による断面図である。
次いでトランジスタ522の変形例について説明する。
次いで、横電界方式の液晶表示装置の断面図の変形例について説明する。
本実施の形態では、上記実施の形態1で説明した、横電界方式の表示装置にタッチセンサ(接触検出装置)を設けることで、タッチパネルとして機能させる構成について説明する。
本実施の形態では、上記実施の形態4で説明した、表示装置をタッチパネルとして機能させる構成についての変形例及びその応用例について説明する。
タッチパネルの構造は、静電容量を形成するタッチパネル基板を液晶表示装置500の基板541側に取り付ける構成、または液晶表示装置500の基板541の外側に取り付ける帯電防止用の導電膜を用いて、表面容量(surface capacitive)型のタッチセンサとする構成、といった外付け方式のタッチパネルとすることもできる。以下、図42(A)乃至図43を用いて、外付け方式のタッチパネルに適用されるタッチセンサの構成例を説明する。
次に、本発明の一態様の表示装置を用いることのできる表示モジュールについて、図46を用いて説明を行う。
本実施の形態においては、図1(A)に示す表示装置の画素回路108に用いることのできる構成について、図45を用いて説明を行う。本発明の表示装置は、画素回路108が有する表示素子を変えることで様々な表示装置として適用可能である。
本実施の形態においては、電子機器の例について説明する。
なお、上記実施の形態で開示された、導電膜や半導体膜はスパッタ法やプラズマCVD法により形成することができるが、他の方法、例えば、熱CVD(Chemical Vapor Deposition)法により形成してもよい。熱CVD法の例としてMOCVD(Metal Organic Chemical Vapor Deposition)法やALD(Atomic Layer Deposition)法を使っても良い。
DL データ線
LC 液晶素子
CAP 容量素子
DL_Y データ線
DL_n データ線
DL_1 データ線
GL_X 走査線
GL_m 走査線
GL_1 走査線
102 画素部
104 駆動回路部
104a ゲートドライバ
104b ソースドライバ
106 保護回路
106_1 保護回路
106_2 保護回路
106_3 保護回路
106_4 保護回路
107 端子部
108 画素回路
110 配線
112 配線
114 抵抗素子
130 液晶素子
131_1 トランジスタ
131_2 トランジスタ
133_1 容量素子
133_2 容量素子
134 トランジスタ
135 発光素子
140 基板
142 導電層
144 絶縁層
146 絶縁層
148 導電層
151 トランジスタ
152 トランジスタ
153 トランジスタ
154 トランジスタ
155 トランジスタ
156 トランジスタ
157 トランジスタ
158 トランジスタ
159 トランジスタ
160 トランジスタ
161 トランジスタ
162 トランジスタ
163 トランジスタ
164 トランジスタ
165 トランジスタ
166 トランジスタ
171 抵抗素子
172 抵抗素子
173 抵抗素子
174 抵抗素子
175 抵抗素子
176 抵抗素子
177 抵抗素子
178 抵抗素子
179 抵抗素子
180 抵抗素子
181 配線
182 配線
183 配線
184 配線
185 配線
186 配線
187 配線
188 配線
189 配線
190 配線
191 配線
199 抵抗素子
301 導電膜
302 トランジスタ
304 トランジスタ
306 トランジスタ
308 トランジスタ
310 トランジスタ
312 トランジスタ
314 トランジスタ
316 トランジスタ
351 配線
352 配線
353 配線
354 配線
355 配線
356 配線
381 配線
382 配線
383 配線
384 配線
385 配線
386 配線
400 基板
401 導電膜
402 ゲート電極
403 絶縁膜
404 第2の絶縁層
405 酸化物半導体膜
406 島状の酸化物半導体層
406s 酸化物積層
407 導電膜
408 ソース電極
409 ドレイン電極
410 絶縁層
411 絶縁層
412 絶縁層
413 酸化物半導体層
414 酸化物半導体層
414s 酸化物層
415 酸化物半導体層
416 絶縁層
420 タッチパネル
421 偏光板
422 偏光板
423 導電層
430 領域
431 配線
432 配線
450 タッチセンサ
451 電極
451a 導電膜
451b 導電膜
451c 導電膜
452 電極
454 容量素子
461 FPC
462 FPC
471 電極
481 絶縁膜
482 絶縁膜
486 配線
491 基板
492 基板
500 液晶表示装置
501 画素部
502 ゲートドライバ
503 ゲートドライバ
504 ソースドライバ
505 端子部
506 FPC
511 保護回路
512 シール部材
515 スペーサ
518 画素
519 導電層
520 導電層
521 基板
522 トランジスタ
523 半導体層
524 導電層
525 導電層
526 導電層
528 開口部
532 絶縁層
533 絶縁層
534 絶縁層
535 絶縁層
536 絶縁層
537 絶縁層
538 絶縁層
539 配向膜
540 液晶層
541 基板
542 ブラックマトリクス
543 カラーフィルタ
544 オーバーコート
545 配向膜
551 導電層
551L 配線
552 導電層
552L 配線
553 開口部
554 導電層
555 半導体層
556 導電層
557 導電層
558 導電層
559 導電層
561 導電層
571 導電層
572 導電層
573 導電層
574 導電層
575 導電層
576 導電層
581 画素部
582 保護回路
583 接続部
584 開口部
585 開口部
586 開口部
600 配線
601 配線
602 配線
603 保護回路
604A トランジスタ
604B トランジスタ
605A トランジスタ
605B トランジスタ
5000 筐体
5001 表示部
5002 表示部
5003 スピーカ
5004 LEDランプ
5005 操作キー
5006 接続端子
5007 センサ
5008 マイクロフォン
5009 スイッチ
5010 赤外線ポート
5011 記録媒体読込部
5012 支持部
5013 イヤホン
5014 アンテナ
5015 シャッターボタン
5016 受像部
5017 充電器
5018 支持台
5019 外部接続ポート
5020 ポインティングデバイス
5021 リーダ/ライタ
5022 筐体
5023 表示部
5024 リモコン装置
5025 スピーカ
5026 表示モジュール
5027 ユニットバス
5028 表示モジュール
5029 車体
5030 天井
5031 表示モジュール
5032 ヒンジ部
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネルセル
8007 バックライトユニット
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリー
Claims (3)
- 第1の導電層と、第2の導電層と、第3の導電層と、酸化物半導体層と、前記酸化物半導体層と接する絶縁層と、を有する保護回路を有し、
前記絶縁層は、前記酸化物半導体層上及び前記第3の導電層上に設けられており、
前記第1の導電層と前記第2の導電層とは、前記絶縁層上に離間して設けられており、
前記第1の導電層は、前記絶縁層の第1の開口部において、前記酸化物半導体層と電気的に接続され、
前記第2の導電層は、前記絶縁層の第2の開口部において、前記酸化物半導体層と電気的に接続され、
前記第2の導電層は、前記絶縁層の第3の開口部において、前記第3の導電層と電気的に接続され、
前記第3の導電層は、前記酸化物半導体層と重ならないことを特徴とする半導体装置。 - 第1の導電層と、第2の導電層と、第3の導電層と、酸化物半導体層と、前記酸化物半導体層と接する絶縁層と、を有する保護回路を有し、
前記絶縁層は、前記酸化物半導体層上及び前記第3の導電層上に設けられており、
前記第1の導電層と前記第2の導電層とは、前記絶縁層上に離間して設けられており、
前記第1の導電層は、前記絶縁層の第1の開口部において、前記酸化物半導体層と電気的に接続され、
前記第2の導電層は、前記絶縁層の第2の開口部において、前記酸化物半導体層と電気的に接続され、
前記第2の導電層は、前記絶縁層の第3の開口部において、前記第3の導電層と電気的に接続され、
前記第3の導電層は、前記酸化物半導体層と重ならず、
前記保護回路には、トランジスタが設けられていないことを特徴とする半導体装置。 - 第1のトランジスタを有する画素部と、
第1の導電層と、第2の導電層と、第3の導電層と、酸化物半導体層と、前記酸化物半導体層と接する絶縁層と、を有する保護回路を有し、
前記絶縁層は、前記酸化物半導体層上及び前記第3の導電層上に設けられており、
前記第1の導電層と前記第2の導電層とは、前記絶縁層上に離間して設けられており、
前記第1の導電層は、前記絶縁層の第1の開口部において、前記酸化物半導体層と電気的に接続され、
前記第2の導電層は、前記絶縁層の第2の開口部において、前記酸化物半導体層と電気的に接続され、
前記第2の導電層は、前記絶縁層の第3の開口部において、前記第3の導電層と電気的に接続され、
前記第3の導電層は、前記酸化物半導体層と重ならず、
前記保護回路には、トランジスタが設けられておらず、
前記第1のトランジスタの酸化物半導体層は、前記保護回路が有する前記酸化物半導体層と同層に設けられていることを特徴とする表示装置。
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KR102282651B1 (ko) | 2021-07-27 |
TW201941421A (zh) | 2019-10-16 |
KR20210094506A (ko) | 2021-07-29 |
TWI613759B (zh) | 2018-02-01 |
TWI757837B (zh) | 2022-03-11 |
JP2018174331A (ja) | 2018-11-08 |
TW201820612A (zh) | 2018-06-01 |
CN109449170A (zh) | 2019-03-08 |
JP7375142B2 (ja) | 2023-11-07 |
KR102489234B1 (ko) | 2023-01-18 |
KR20140068762A (ko) | 2014-06-09 |
TWI662698B (zh) | 2019-06-11 |
CN109449170B (zh) | 2023-10-31 |
TWI703723B (zh) | 2020-09-01 |
TW201423910A (zh) | 2014-06-16 |
JP6553771B2 (ja) | 2019-07-31 |
JP2019185054A (ja) | 2019-10-24 |
KR20230012092A (ko) | 2023-01-25 |
TW202114208A (zh) | 2021-04-01 |
CN103855169B (zh) | 2019-01-08 |
US9130367B2 (en) | 2015-09-08 |
JP2024008954A (ja) | 2024-01-19 |
JP2015046561A (ja) | 2015-03-12 |
JP2021076860A (ja) | 2021-05-20 |
JP2022183150A (ja) | 2022-12-08 |
TWI820614B (zh) | 2023-11-01 |
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US20140145181A1 (en) | 2014-05-29 |
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