JP6347600B2 - 高効率発光ダイオード - Google Patents
高効率発光ダイオード Download PDFInfo
- Publication number
- JP6347600B2 JP6347600B2 JP2013255499A JP2013255499A JP6347600B2 JP 6347600 B2 JP6347600 B2 JP 6347600B2 JP 2013255499 A JP2013255499 A JP 2013255499A JP 2013255499 A JP2013255499 A JP 2013255499A JP 6347600 B2 JP6347600 B2 JP 6347600B2
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- Prior art keywords
- electrode
- graphene
- emitting diode
- light emitting
- metamaterial
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- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 28
- 150000001875 compounds Chemical class 0.000 claims description 27
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 54
- 239000000758 substrate Substances 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910021389 graphene Inorganic materials 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/007—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of negative effective refractive index materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Description
Claims (10)
- p型化合物半導体層、活性層及びn型化合物半導体層を含む半導体積層構造体と、
前記半導体積層構造体の上に位置する第1の電極と、
前記第1の電極と前記半導体積層構造体との間に少なくとも部分的に位置するグラフェン―メタ物質積層構造とを含み、
前記メタ物質は、負の屈折率を有し、前記活性層から放出される光の波長より小さなサイズのパターンに形成されることを特徴とする発光ダイオード。 - 前記グラフェン―メタ物質積層構造は、その上に位置する第1の電極の幅より大きな幅を有することを特徴とする請求項1に記載の発光ダイオード。
- 前記グラフェン―メタ物質は、前記第1の電極の側面に延長して前記第1の電極の側面を覆うことを特徴とする請求項1に記載の発光ダイオード。
- 前記グラフェン―メタ物質は前記第1の電極を取り囲むことを特徴とする請求項1に記載の発光ダイオード。
- 前記第1の電極は、電極パッドと、前記電極パッドから延長した延長部と、を含むことを特徴とする請求項1に記載の発光ダイオード。
- 前記グラフェン―メタ物質は、前記延長部と前記半導体積層構造体との間に部分的に位置することを特徴とする請求項5に記載の発光ダイオード。
- 前記グラフェン―メタ物質はn型化合物半導体層の上に位置することを特徴とする請求項1に記載の発光ダイオード。
- 前記n型化合物半導体層はn型窒化ガリウム層であることを特徴とする請求項7に記載の発光ダイオード。
- 前記メタ物質はAu又は誘電物質で形成されることを特徴とする請求項1に記載の発光ダイオード。
- 前記グラフェン―メタ物質積層構造の厚さは1nm以下であることを特徴とする請求項1に記載の発光ダイオード。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120148361A KR20140078977A (ko) | 2012-12-18 | 2012-12-18 | 고효율 발광 다이오드 |
KR10-2012-0148361 | 2012-12-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014120774A JP2014120774A (ja) | 2014-06-30 |
JP6347600B2 true JP6347600B2 (ja) | 2018-06-27 |
Family
ID=49880436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013255499A Expired - Fee Related JP6347600B2 (ja) | 2012-12-18 | 2013-12-10 | 高効率発光ダイオード |
Country Status (4)
Country | Link |
---|---|
US (1) | US9231169B2 (ja) |
EP (1) | EP2747156A3 (ja) |
JP (1) | JP6347600B2 (ja) |
KR (1) | KR20140078977A (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101569415B1 (ko) * | 2014-06-09 | 2015-11-16 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
KR20160037060A (ko) * | 2014-09-26 | 2016-04-05 | 서울바이오시스 주식회사 | 발광소자 및 그 제조 방법 |
GB2531809A (en) * | 2014-11-03 | 2016-05-04 | Graphene Lighting Plc | Light emitting structures and devices |
KR102554231B1 (ko) * | 2016-06-16 | 2023-07-12 | 서울바이오시스 주식회사 | 전극 구조를 갖는 수직형 발광 다이오드 및 그것을 갖는 발광 다이오드 패키지 |
US20190164945A1 (en) * | 2017-11-27 | 2019-05-30 | Seoul Viosys Co., Ltd. | Light emitting diode for display and display apparatus having the same |
KR102664401B1 (ko) | 2019-01-28 | 2024-05-08 | 삼성전자주식회사 | 발광 소자 및 이를 포함하는 디스플레이 장치 |
KR20200144913A (ko) | 2019-06-19 | 2020-12-30 | 삼성전자주식회사 | 발광 소자 및 이를 포함하는 디스플레이 장치 |
KR102276194B1 (ko) | 2021-06-10 | 2021-07-12 | 이수행 | 저장공간들에 대한 저장물의 재고량검출시스템 |
KR102276197B1 (ko) | 2021-06-10 | 2021-07-12 | 이수행 | 저장물의 재고량 검출장치 |
KR102370131B1 (ko) | 2021-12-14 | 2022-03-03 | 이수행 | 재고량 검출 시스템을 이용한 인공지능(ai) 통합 생산관리시스템 및 그를 이용한 통합 생산관리방법 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008135441A (ja) * | 2006-11-27 | 2008-06-12 | Sumitomo Electric Ind Ltd | 2次元フォトニック結晶面発光レーザおよびその製造方法 |
US20080197369A1 (en) * | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
JP5104070B2 (ja) * | 2007-06-29 | 2012-12-19 | コニカミノルタホールディングス株式会社 | 2次元フォトニック結晶面発光レーザ |
JP4347369B2 (ja) * | 2007-07-31 | 2009-10-21 | キヤノン株式会社 | 面発光レーザの製造方法 |
JP2010187062A (ja) * | 2009-02-10 | 2010-08-26 | Hitachi Maxell Ltd | メタマテリアル |
WO2011053037A2 (ko) | 2009-10-30 | 2011-05-05 | 부산대학교 산학협력단 | 금나노입자의 제조방법 |
US9368580B2 (en) * | 2009-12-04 | 2016-06-14 | Sensor Electronic Technology, Inc. | Semiconductor material doping |
AU2011289620C1 (en) * | 2010-08-07 | 2014-08-21 | Tpk Holding Co., Ltd. | Device components with surface-embedded additives and related manufacturing methods |
US20120141799A1 (en) * | 2010-12-03 | 2012-06-07 | Francis Kub | Film on Graphene on a Substrate and Method and Devices Therefor |
US9182519B2 (en) * | 2011-08-26 | 2015-11-10 | University Of Central Florida Research Foundation, Inc. | Metamaterial composition comprising frequency-selective-surface resonant element disposed on/in a dielectric flake, methods, and applications |
EP2610929B1 (en) * | 2011-12-26 | 2019-09-18 | LG Innotek Co., Ltd. | Light emitting device |
KR101342664B1 (ko) * | 2012-02-01 | 2013-12-17 | 삼성전자주식회사 | 자외선 발광소자 |
WO2013184556A1 (en) * | 2012-06-05 | 2013-12-12 | President And Fellows Of Harvard College | Ultra-thin optical coatings and devices and methods of using ultra-thin optical coatings |
-
2012
- 2012-12-18 KR KR1020120148361A patent/KR20140078977A/ko not_active Application Discontinuation
-
2013
- 2013-12-10 JP JP2013255499A patent/JP6347600B2/ja not_active Expired - Fee Related
- 2013-12-18 EP EP13197996.5A patent/EP2747156A3/en not_active Withdrawn
- 2013-12-18 US US14/132,123 patent/US9231169B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US9231169B2 (en) | 2016-01-05 |
KR20140078977A (ko) | 2014-06-26 |
EP2747156A3 (en) | 2016-11-23 |
US20140166976A1 (en) | 2014-06-19 |
JP2014120774A (ja) | 2014-06-30 |
EP2747156A2 (en) | 2014-06-25 |
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