JP6340119B2 - マイクロチャネルプレートの製造方法 - Google Patents
マイクロチャネルプレートの製造方法 Download PDFInfo
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- JP6340119B2 JP6340119B2 JP2017104705A JP2017104705A JP6340119B2 JP 6340119 B2 JP6340119 B2 JP 6340119B2 JP 2017104705 A JP2017104705 A JP 2017104705A JP 2017104705 A JP2017104705 A JP 2017104705A JP 6340119 B2 JP6340119 B2 JP 6340119B2
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- mcp
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- reduction treatment
- plate
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000005253 cladding Methods 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 46
- 239000002253 acid Substances 0.000 claims description 36
- 230000009467 reduction Effects 0.000 claims description 36
- 239000000835 fiber Substances 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 229910000464 lead oxide Inorganic materials 0.000 claims description 11
- 239000005355 lead glass Substances 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 description 67
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 21
- 230000007613 environmental effect Effects 0.000 description 18
- 150000002500 ions Chemical class 0.000 description 14
- 101710121996 Hexon protein p72 Proteins 0.000 description 8
- 101710125418 Major capsid protein Proteins 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000011946 reduction process Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 101100426741 Rattus norvegicus Tpsb2 gene Proteins 0.000 description 1
- 101100129591 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mcp6 gene Proteins 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/24—Dynodes having potential gradient along their surfaces
- H01J43/246—Microchannel plates [MCP]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2957—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using channel multiplier arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/2414—Structurally defined web or sheet [e.g., overall dimension, etc.] including fringe
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electron Tubes For Measurement (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Glass Compositions (AREA)
Description
Claims (2)
- 還元処理前に絶縁性を呈する一方、還元処理後に導電性を呈する鉛ガラスからなる本体を備えたマイクロチャネルプレートの製造方法であって、
それぞれが、所定方向に沿って延びるとともに特定の酸に対して可溶性を有するコア部、および、前記コア部の外周面を取り囲むとともに前記特定の酸に対して不溶性を有し、還元処理前において重量比48.0%以上65.0%未満の酸化鉛を含むクラッド部により構成された複数のチャネルファイバを用意する工程と、
それぞれの側面を当接させた状態で前記複数のチャネルファイバを加熱することにより一体化された、前記複数のチャネルファイバを含む母材を製造する工程と、
前記母材を、前記所定方向に沿って所定の厚さで、かつ、前記所定方向に対して所定角度でスライスすることにより、前記本体となるべき板材を作製する工程と、
作製された前記板材を前記特定の酸の溶液に浸漬することにより、前記板材に含まれる前記複数のチャネルファイバそれぞれの前記コア部を除去する工程と、
前記複数のチャネルファイバそれぞれにおける前記クラッド部の、前記コア部が除去されることにより形成された貫通孔の内壁上に、前記クラッド部の還元処理前の耐酸性よりも高い耐酸性を有するコーティング材を設ける工程と、
前記クラッド部の内壁上に前記コーティング材が設けられた前記板材に対して、前記板材を水素雰囲気中で加熱することにより還元処理を行う工程と、を備え、
前記コーティング材を設ける工程において、前記コーティング材はAl2O3膜であり、前記Al2O3膜は、原子層堆積法により前記貫通孔の内壁上に形成されることを特徴とするマイクロチャネルプレートの製造方法。 - 還元処理前の前記クラッド部は、重量比20.0%以上40.0%未満の二酸化珪素を含むことを特徴とする請求項1に記載のマイクロチャネルプレートの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261648752P | 2012-05-18 | 2012-05-18 | |
US61/648,752 | 2012-05-18 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014515602A Division JP6226865B2 (ja) | 2012-05-18 | 2013-05-10 | マイクロチャネルプレートの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017208345A JP2017208345A (ja) | 2017-11-24 |
JP6340119B2 true JP6340119B2 (ja) | 2018-06-06 |
Family
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Family Applications (2)
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---|---|---|---|
JP2014515602A Active JP6226865B2 (ja) | 2012-05-18 | 2013-05-10 | マイクロチャネルプレートの製造方法 |
JP2017104705A Active JP6340119B2 (ja) | 2012-05-18 | 2017-05-26 | マイクロチャネルプレートの製造方法 |
Family Applications Before (1)
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JP2014515602A Active JP6226865B2 (ja) | 2012-05-18 | 2013-05-10 | マイクロチャネルプレートの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8878128B2 (ja) |
EP (1) | EP2851930B1 (ja) |
JP (2) | JP6226865B2 (ja) |
WO (1) | WO2013172278A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9117640B2 (en) | 2012-05-18 | 2015-08-25 | Hamamatsu Photonics K.K. | Microchannel plate having a main body, image intensifier, ion detector, and inspection device |
JP6220780B2 (ja) * | 2012-05-18 | 2017-10-25 | 浜松ホトニクス株式会社 | マイクロチャネルプレート、イメージインテンシファイヤ、荷電粒子検出器および検査装置 |
DE102013003167A1 (de) | 2013-02-26 | 2014-08-28 | Arburg Gmbh + Co. Kg | Verfahren zur Herstellung eines dreidimensionalen Gegenstandes durch generativen Aufbau |
CN109182998B (zh) * | 2018-07-18 | 2019-12-31 | 中国科学院西安光学精密机械研究所 | 一种铅硅酸盐玻璃微通道板及在微通道板内壁制备Ni掺杂Al2O3高阻薄膜的方法 |
JP7176927B2 (ja) * | 2018-10-30 | 2022-11-22 | 浜松ホトニクス株式会社 | Cemアセンブリおよび電子増倍デバイス |
JP7307849B2 (ja) * | 2018-10-30 | 2023-07-12 | 浜松ホトニクス株式会社 | Cemアセンブリおよび電子増倍デバイス |
CN111029230B (zh) * | 2019-12-13 | 2022-04-05 | 山西长城微光器材股份有限公司 | 微通道板通道内抛光方法 |
CN110967729A (zh) * | 2019-12-13 | 2020-04-07 | 山西长城微光器材股份有限公司 | 采用空芯丝热熔法制作微通道板空心阵列基底的方法 |
CN114180830B (zh) * | 2021-11-23 | 2024-01-16 | 中国建筑材料科学研究总院有限公司 | 包边玻璃及其制备方法、用其制备微通道板的方法及微通道板 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3979621A (en) | 1969-06-04 | 1976-09-07 | American Optical Corporation | Microchannel plates |
US3979637A (en) | 1971-11-08 | 1976-09-07 | American Optical Corporation | Microchannel plates and method of making same |
JPS53107267A (en) | 1977-03-02 | 1978-09-19 | Hamamatsu Tv Co Ltd | Method of producing channel plate |
DE3317778A1 (de) | 1982-05-17 | 1983-11-17 | Galileo Electro-Optics Corp., Sturbridge, Mass. | Glas |
JPS61140044A (ja) | 1984-12-11 | 1986-06-27 | Hamamatsu Photonics Kk | マイクロチヤンネルプレ−トの製造方法 |
US4737013A (en) * | 1986-11-03 | 1988-04-12 | Litton Systems, Inc. | Microchannel plate having an etch limiting barrier |
JPS63299032A (ja) * | 1987-05-29 | 1988-12-06 | Matsushita Electric Ind Co Ltd | 二次電子増倍器の製造方法 |
US4983551A (en) * | 1988-08-13 | 1991-01-08 | Galileo Electro-Optics Corp. | Channel electron multipliers |
DE3909526A1 (de) * | 1988-03-24 | 1989-10-05 | Galileo Electro Optics Corp | Kanal-elektronenvervielfacher |
DE69030145T2 (de) * | 1989-08-18 | 1997-07-10 | Galileo Electro Optics Corp | Kontinuierliche Dünnschicht-Dynoden |
US5034354A (en) | 1990-05-16 | 1991-07-23 | Corning Incorporated | Alkali-free multichannel plate and glass |
JPH0660800A (ja) * | 1992-08-03 | 1994-03-04 | Nippon Sheet Glass Co Ltd | マイクロチャネルプレート及びその製造方法 |
US5493169A (en) * | 1994-07-28 | 1996-02-20 | Litton Systems, Inc. | Microchannel plates having both improved gain and signal-to-noise ratio and methods of their manufacture |
US5997713A (en) * | 1997-05-08 | 1999-12-07 | Nanosciences Corporation | Silicon etching process for making microchannel plates |
JP2001351509A (ja) | 2000-06-08 | 2001-12-21 | Hamamatsu Photonics Kk | マイクロチャネルプレート |
WO2004112072A2 (en) * | 2003-05-29 | 2004-12-23 | Nova Scientific, Inc. | Electron multipliers and radiation detectors |
JP4567404B2 (ja) * | 2004-09-14 | 2010-10-20 | 浜松ホトニクス株式会社 | マイクロチャンネルプレート及びその製造方法 |
JP4945763B2 (ja) * | 2005-05-17 | 2012-06-06 | 国立大学法人京都大学 | 電子ビーム露光装置 |
US8052884B2 (en) * | 2008-02-27 | 2011-11-08 | Arradiance, Inc. | Method of fabricating microchannel plate devices with multiple emissive layers |
US7855493B2 (en) * | 2008-02-27 | 2010-12-21 | Arradiance, Inc. | Microchannel plate devices with multiple emissive layers |
US8237129B2 (en) * | 2008-06-20 | 2012-08-07 | Arradiance, Inc. | Microchannel plate devices with tunable resistive films |
JP5582493B2 (ja) * | 2009-12-17 | 2014-09-03 | 独立行政法人理化学研究所 | マイクロチャネルプレート組立体及びマイクロチャネルプレート検出器 |
FR2964785B1 (fr) * | 2010-09-13 | 2013-08-16 | Photonis France | Dispositif multiplicateur d'électrons a couche de nanodiamant. |
-
2013
- 2013-05-10 EP EP13790037.9A patent/EP2851930B1/en active Active
- 2013-05-10 JP JP2014515602A patent/JP6226865B2/ja active Active
- 2013-05-10 WO PCT/JP2013/063204 patent/WO2013172278A1/ja active Application Filing
- 2013-05-15 US US13/894,868 patent/US8878128B2/en active Active
-
2017
- 2017-05-26 JP JP2017104705A patent/JP6340119B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US8878128B2 (en) | 2014-11-04 |
EP2851930B1 (en) | 2017-12-13 |
WO2013172278A1 (ja) | 2013-11-21 |
JP2017208345A (ja) | 2017-11-24 |
EP2851930A4 (en) | 2016-03-16 |
JPWO2013172278A1 (ja) | 2016-01-12 |
JP6226865B2 (ja) | 2017-11-08 |
EP2851930A1 (en) | 2015-03-25 |
US20130313422A1 (en) | 2013-11-28 |
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