JP6339032B2 - Manufacturing method of optical device including light shielding body, and storage medium - Google Patents

Manufacturing method of optical device including light shielding body, and storage medium Download PDF

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JP6339032B2
JP6339032B2 JP2015030918A JP2015030918A JP6339032B2 JP 6339032 B2 JP6339032 B2 JP 6339032B2 JP 2015030918 A JP2015030918 A JP 2015030918A JP 2015030918 A JP2015030918 A JP 2015030918A JP 6339032 B2 JP6339032 B2 JP 6339032B2
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shielding body
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JP2016152403A (en
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中 崇 田
中 崇 田
藤 祐 介 齋
藤 祐 介 齋
井 和 俊 岩
井 和 俊 岩
下 光 秋 岩
下 光 秋 岩
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding

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Description

本発明は、遮光体を含む光学装置の製造方法、その製造システムおよび記憶媒体に係り、とりわけ精度良く、かつ低コストで作製することができる遮光体を含む光学装置の製造方法、および記憶媒体に関する。   The present invention relates to a method for manufacturing an optical device including a light shield, a manufacturing system thereof, and a storage medium, and more particularly, to a method for manufacturing an optical device including a light shield that can be manufactured with high accuracy and low cost, and a storage medium. .

ＣＭＯＳイメージセンサやＣＣＤイメージセンサ等の固体撮像素子には、表面照射型と裏面照射型がある。このうち裏面照射型固体撮像素子は、半導体基板の表面側に多数のフォトダイオードが設けられ、裏面側に、カラーフィルタやマイクロレンズが形成され、裏面側から半導体基板内に入射した光によって発生した光電荷を表面側のフォトダイオードで読み取り、信号読出回路がこの光電荷を出力する。   Solid-state imaging devices such as a CMOS image sensor and a CCD image sensor include a front side illumination type and a back side illumination type. Among these, the back-illuminated solid-state imaging device has a large number of photodiodes provided on the front side of the semiconductor substrate, color filters and micro lenses are formed on the back side, and is generated by light incident on the semiconductor substrate from the back side. The photoelectric charge is read by a photodiode on the surface side, and the signal readout circuit outputs this photoelectric charge.

この裏面照射型は、信号読出回路を裏面側に設ける必要がないため開口率を大きくとることができ、また、半導体基板の厚さを厚くできるため入射光エネルギの殆ど全てを光電変換できる。   In this backside illumination type, it is not necessary to provide a signal readout circuit on the backside, so that the aperture ratio can be increased, and because the thickness of the semiconductor substrate can be increased, almost all incident light energy can be photoelectrically converted.

ところで裏面照射型固体撮像素子は、光電変換効率を高めるために半導体基板が厚く光路長が長くなっているため、斜めに入射した入射光が隣接するフォトダイオードに入ってしまうという問題がある。   By the way, the back-illuminated solid-state imaging device has a problem that incident light incident obliquely enters an adjacent photodiode because the semiconductor substrate is thick and the optical path length is long in order to increase the photoelectric conversion efficiency.

このような斜めに入射した入射光が隣接するフォトダイオードに入ってしまうことを防ぐため、半導体基板に各フォトダイオードに対応させて遮光体をＰＶＤまたはＣＶＤにより形成している。（たとえば、特許文献１、２参照）   In order to prevent such incident light incident obliquely from entering adjacent photodiodes, a light shielding body is formed on the semiconductor substrate by PVD or CVD so as to correspond to each photodiode. (For example, see Patent Documents 1 and 2)

特開２００９−６５０９８号公報JP 2009-65098 A 特開２０１０−１９３０７３号公報JP 2010-193073 A

しかしながら半導体基板にＰＶＤまたはＣＶＤにより遮光体を形成する場合、製造コストが高額となり、かつ微細な構造で良好な遮光特性を有する遮光体を作製することはむずかしい。   However, when a light shielding body is formed on a semiconductor substrate by PVD or CVD, it is difficult to produce a light shielding body having a high manufacturing cost and having a good light shielding characteristic with a fine structure.

本発明は、このような点を考慮してなされたものであり、精度良くかつ良好な遮光特性を有し低コストで作製することができる遮光体を含む光学装置の製造方法、および記憶媒体を提供することを目的とする。   The present invention has been made in consideration of the above points, and has a method for manufacturing an optical device including a light-blocking body that can be manufactured with high accuracy and good light-blocking characteristics at low cost, and a storage medium. The purpose is to provide.

本発明は、遮光体を含む光学装置の製造方法において、基板を準備する工程と、前記基板上にＣｏまたはＣｏ合金を含むめっき液を供給して無電解めっき処理を施すことによりＣｏまたはＣｏ合金のめっき層を形成する工程と、を備えたことを特徴とする遮光体を含む光学装置の製造方法である。     The present invention relates to a method of manufacturing an optical device including a light-shielding body, a step of preparing a substrate, and supplying a plating solution containing Co or a Co alloy onto the substrate to perform an electroless plating process. And a step of forming the plating layer. A method of manufacturing an optical device including a light shielding body.

本発明は、遮光体を含む光学装置の製造システムに光学装置の製造方法を実行させるためのコンピュータプログラムを格納した記憶媒体において、光学装置の製造方法は、基板を準備する工程と、前記基板上にＣｏまたはＣｏ合金を含むめっき液を供給して無電解めっき処理を施すことによりＣｏまたはＣｏ合金のめっき層を形成する工程と、を備えたことを特徴とする記憶媒体である。   The present invention relates to a storage medium storing a computer program for causing an optical device manufacturing system including a light shield to execute an optical device manufacturing method. The optical device manufacturing method includes: a step of preparing a substrate; And a step of forming a Co or Co alloy plating layer by supplying a plating solution containing Co or a Co alloy and performing an electroless plating process on the storage medium.

本発明によれば、精度良くかつ低コストで遮光体を作製することができる。   According to the present invention, it is possible to manufacture a light shielding body with high accuracy and low cost.

図１は、本発明の実施の形態における光学装置の製造システムを示すブロック図。FIG. 1 is a block diagram showing an optical device manufacturing system according to an embodiment of the present invention. 図２（ａ）〜（ｅ）は、本発明の実施の形態における光学装置の製造方法が施される基板を示す図。2A to 2E are views showing a substrate on which a method for manufacturing an optical device according to an embodiment of the present invention is applied. 図３は、遮光体を含む光学装置の一例を示す固体撮像素子を示す図。FIG. 3 is a diagram illustrating a solid-state imaging device showing an example of an optical device including a light shielding body. 図４は、遮光体の遮光特性を示す図。FIG. 4 is a diagram showing the light shielding characteristics of the light shielding body. 図５は、遮光体の遮光特性を示す図。FIG. 5 is a diagram illustrating the light blocking characteristics of the light blocking body. 図６は、遮光体の遮光特性を示す図。FIG. 6 is a diagram illustrating the light blocking characteristics of the light blocking body. 図７は、フォトダイオードと遮光体の配置関係を示す図。FIG. 7 is a diagram showing the arrangement relationship between the photodiode and the light shielding member. 図８は、めっき層形成部を示す側断面図。FIG. 8 is a side sectional view showing a plating layer forming portion. 図９は、めっき層形成部を示す平面図。FIG. 9 is a plan view showing a plating layer forming portion. 図１０（ａ）〜（ｅ）は、本発明の変形例における光学装置の製造方法が施される基板を示す図。FIGS. 10A to 10E are views showing a substrate on which a method for manufacturing an optical device according to a modification of the present invention is applied. 図１１（ａ）〜（ｃ）は、本発明の変形例における光学装置の製造方法が施される基板を示す図。11A to 11C are diagrams showing a substrate on which a method for manufacturing an optical device according to a modification of the present invention is applied.

以下、本発明の実施の形態について、図面を参照して説明する。   Embodiments of the present invention will be described below with reference to the drawings.

＜発明の実施の形態＞
まず図１乃至図９により本発明の実施の形態について説明する。 <Embodiment of the Invention>
First, an embodiment of the present invention will be described with reference to FIGS.

はじめに図３により遮光体を含む光学装置、例えば裏面照射型固体撮像素子３０について説明する。   First, an optical device including a light shield, for example, a back-illuminated solid-state image sensor 30 will be described with reference to FIG.

図３に示すように、固体撮像素子３０はインターライン型ＣＣＤであり、ｐ型半導体基板２の表面側に複数の垂直電荷転送路（ＶＣＣＤ）３５と画素を構成する複数のフォトダイオード（光電変換素子）３６とが形成され、裏面側に、複数のカラーフィルタ（赤（Ｒ），緑（Ｇ），青（Ｂ））層３３及び複数のマイクロレンズ３４が設けられている。   As shown in FIG. 3, the solid-state imaging device 30 is an interline CCD, and a plurality of vertical charge transfer paths (VCCD) 35 and a plurality of photodiodes (photoelectric conversion) constituting pixels on the surface side of the p-type semiconductor substrate 2. Element) 36 is formed, and a plurality of color filter (red (R), green (G), blue (B)) layers 33 and a plurality of microlenses 34 are provided on the back surface side.

各色のカラーフィルタ層３３は対応するフォトダイオード３６に整列する位置に積層され、また、各マイクロレンズ３４は、対応するフォトダイオード３６の中心に焦点が合うように整列して形成される。また半導体基板２の表面側には、垂直電荷転送路３５上に、絶縁層３７と金属電極３８が積層されている。   The color filter layers 33 of the respective colors are stacked at positions aligned with the corresponding photodiodes 36, and the respective microlenses 34 are formed so as to be focused on the centers of the corresponding photodiodes 36. On the surface side of the semiconductor substrate 2, an insulating layer 37 and a metal electrode 38 are stacked on the vertical charge transfer path 35.

図３に示す裏面照射型固体撮像素子３０はＣＣＤタイプであるが、たとえば、特許文献２のようなＣＭＯＳタイプその他の形式の固体撮像素子にも本実施形態を同様に適用できる。   The back-illuminated solid-state image sensor 30 shown in FIG. 3 is a CCD type, but this embodiment can be applied to a solid-state image sensor of another type such as a CMOS type as disclosed in Patent Document 2, for example.

半導体基板（以下基板ともいう）２の裏面側表面には凹部２ａが形成され、この基板２の裏面側表面にはカラーフィルタ層３３およびマイクロレンズ３４が順に積層されている。   A recess 2 a is formed on the back surface of the semiconductor substrate (hereinafter also referred to as a substrate) 2, and a color filter layer 33 and a microlens 34 are sequentially stacked on the back surface of the substrate 2.

カラーフィルタ層３３は画素（フォトダイオード）３６単位に区画され、カラーフィルタ層３３の基板２側の隣接区画間には、遮光体２３Ａが設けられる。この遮光体２３Ａは、斜め入射光が隣接画素に進入するのを防止するために設けられている。   The color filter layer 33 is divided into units of pixels (photodiodes) 36, and a light shield 23A is provided between adjacent divisions of the color filter layer 33 on the substrate 2 side. The light shield 23A is provided to prevent obliquely incident light from entering adjacent pixels.

図７は、遮光体２３Ａを裏面側から見た状態を示す図であり、全体として網目状に形成され、各網目が１画素１画素を区画する。この遮光体２３Ａを設けることにより、画像撮像用固体撮像素子では、異なる色を検出する隣接画素間の混色が抑制され、多板式カラー画像撮像用固体撮像素子では、同色の信号を検出する隣接画素間のクロストークが抑制される。   FIG. 7 is a diagram showing a state in which the light shielding body 23A is viewed from the back side, and is formed in a mesh shape as a whole, and each mesh defines one pixel and one pixel. By providing this light shielding body 23A, in the solid-state image pickup device for image pickup, color mixture between adjacent pixels that detect different colors is suppressed, and in the solid-state image pickup device for color image pickup of multiple images, adjacent pixels that detect signals of the same color. Crosstalk between them is suppressed.

次に上述した例えば裏面照射型固体撮像素子３０等の遮光体を含む光学装置を作製するための光学装置の製造システムについて図１および図２により説明する。   Next, an optical device manufacturing system for manufacturing an optical device including a light shielding body such as the back-illuminated solid-state imaging element 30 described above will be described with reference to FIGS.

＜光学装置の製造システム＞
まず図１により本発明による遮光体を含む光学装置の製造システムについて述べる。 <Optical device manufacturing system>
First, an optical device manufacturing system including a light shield according to the present invention will be described with reference to FIG.

図１に示すように、遮光体を含む光学装置の製造システム１０は半導体ウエハ等の凹部２ａを有する基板（シリコン基板）２に対してめっき処理を施して遮光体を作製するものである。   As shown in FIG. 1, a manufacturing system 10 for an optical device including a light shielding body performs a plating process on a substrate (silicon substrate) 2 having a recess 2a such as a semiconductor wafer to produce a light shielding body.

このような遮光体を含む光学装置の製造システム１０は、基板２を収納したカセット（図示せず）が載置されるカセットステーション１８と、カセットステーション１８上のカセットから基板２を取り出して搬送する基板搬送アーム１１と、基板搬送アーム１１が走行する走行路１１ａとを備えている。   The optical apparatus manufacturing system 10 including such a light shielding body takes out the substrate 2 from the cassette station 18 on which a cassette (not shown) containing the substrate 2 is placed and transports the substrate 2 from the cassette on the cassette station 18. A substrate transport arm 11 and a travel path 11a along which the substrate transport arm 11 travels are provided.

また走行路１１ａの一側に、基板２上に触媒を吸着させて後述する触媒吸着層２２を形成する触媒吸着層形成部１３と、基板２の触媒吸着層２２上にＣｏまたはＣｏ合金を含むめっき液を供給して無電解めっき処理を施すことにより、ＣｏまたはＣｏ合金のめっき層２３を形成するめっき層形成部１４とが配置されている。   Further, on one side of the traveling path 11a, a catalyst adsorption layer forming portion 13 for adsorbing a catalyst on the substrate 2 to form a catalyst adsorption layer 22 described later, and Co or a Co alloy on the catalyst adsorption layer 22 of the substrate 2 are included. A plating layer forming unit 14 for forming a Co or Co alloy plating layer 23 is provided by supplying a plating solution and performing an electroless plating process.

また走行路１１ａの他側に、基板２に形成された触媒吸着層２２およびめっき層２３を焼きしめる焼きしめ部１５と、めっき層２３上にレジストパターン２７を形成するためのレジストパターン形成部１６とが配置されている。このうちレジストパターン形成部１６はいずれも図示しないが、レジスト塗布部と、露光部と、現像部とを有している。   Further, on the other side of the traveling path 11 a, a baking portion 15 for baking the catalyst adsorption layer 22 and the plating layer 23 formed on the substrate 2, and a resist pattern forming portion 16 for forming a resist pattern 27 on the plating layer 23. And are arranged. Of these, the resist pattern forming portion 16 has a resist coating portion, an exposure portion, and a developing portion, although none of them is shown.

また焼きしめ部１５に隣接して、レジストパターン２７をマスクとしてめっき層２３をエッチングすることにより基板２の凹部２ａ内に基板２から外方へ突出する遮光体２３Ａを形成するエッチング処理部１７と、レジストパターン２７を除去するレジストパターン除去部１７Ａとが配置されている。   In addition, an etching processing unit 17 that forms a light shielding body 23A that protrudes outward from the substrate 2 in the recess 2a of the substrate 2 by etching the plating layer 23 using the resist pattern 27 as a mask adjacent to the baking portion 15; A resist pattern removing portion 17A for removing the resist pattern 27 is disposed.

また上述しためっき処理システムの各構成部材、例えばカセットステーション１８、基板搬送アーム１１、触媒吸着層形成部１３、めっき層形成部１４、焼きしめ部１５、レジストパターン形成部１６、エッチング処理部１７およびレジストパターン除去部１７Ａは、いずれも制御部１９に設けた記憶媒体１９Ａに記録された各種のプログラムに従って制御部１９で駆動制御され、これによって基板２に対する様々な処理が行われる。ここで、記憶媒体１９Ａは、各種の設定データや後述するめっき処理プログラム等の各種のプログラムを格納している。記憶媒体１９Ａとしては、コンピューターで読み取り可能なＲＯＭやＲＡＭなどのメモリーや、ハードディスク、ＣＤ−ＲＯＭ、ＤＶＤ−ＲＯＭやフレキシブルディスクなどのディスク状記憶媒体などの公知のものが使用され得る。   Further, each component of the plating processing system described above, for example, the cassette station 18, the substrate transfer arm 11, the catalyst adsorption layer forming unit 13, the plating layer forming unit 14, the baking unit 15, the resist pattern forming unit 16, the etching processing unit 17, and the like. The resist pattern removing unit 17A is driven and controlled by the control unit 19 in accordance with various programs recorded in the storage medium 19A provided in the control unit 19, whereby various processes for the substrate 2 are performed. Here, the storage medium 19A stores various programs such as various setting data and a plating program described later. As the storage medium 19A, known media such as a computer-readable memory such as ROM and RAM, and a disk-shaped storage medium such as a hard disk, CD-ROM, DVD-ROM, and flexible disk may be used.

次にめっき層２３を形成するためのめっき層形成部１４について更に述べる。   Next, the plating layer forming portion 14 for forming the plating layer 23 will be further described.

めっき層形成部１４は、図８および図９に示すめっき処理装置から構成することができる。   The plating layer forming unit 14 can be configured from a plating apparatus shown in FIGS. 8 and 9.

このようなめっき層形成部１４は、図８および図９に示すとおりのものである。   Such a plating layer forming portion 14 is as shown in FIGS. 8 and 9.

すなわち、めっき層形成部１４は、図８および図９に示すように、ケーシング１０１の内部で基板２を回転保持するための基板回転保持機構（基板収容部）１１０と、基板２の表面にめっき液や洗浄液などを供給する液供給機構５０，９０と、基板２から飛散しためっき液や洗浄液などを受けるカップ１０５と、カップ１０５で受けためっき液や洗浄液を排出する排出口１２４，１２９，１３４と、排出口に集められた液を排出する液排出機構１２０，１２５，１３０と、基板回転保持機構１１０、液供給機構５０，９０，カップ１０５、および液排出機構１２０，１２５，１３０を制御する制御機構１６０と、を備えている。   That is, as shown in FIGS. 8 and 9, the plating layer forming unit 14 is configured to plate the substrate rotation holding mechanism (substrate housing unit) 110 for rotating and holding the substrate 2 inside the casing 101 and the surface of the substrate 2. Liquid supply mechanisms 50 and 90 for supplying a liquid and a cleaning liquid, a cup 105 for receiving a plating liquid and a cleaning liquid scattered from the substrate 2, and outlets 124, 129 and 134 for discharging the plating liquid and the cleaning liquid received by the cup 105. And the liquid discharge mechanism 120, 125, 130 for discharging the liquid collected at the discharge port, the substrate rotation holding mechanism 110, the liquid supply mechanism 50, 90, the cup 105, and the liquid discharge mechanism 120, 125, 130 are controlled. And a control mechanism 160.

（基板回転保持機構）
このうち基板回転保持機構１１０は、図８および図９に示すように、ケーシング１０１内で上下に伸延する中空円筒状の回転軸１１１と、回転軸１１１の上端部に取り付けられたターンテーブル１１２と、ターンテーブル１１２の上面外周部に設けられ、基板２を支持するウエハチャック１１３と、回転軸１１１を回転駆動する回転機構１６２と、を有している。このうち回転機構１６２は、制御機構１６０により制御され、回転機構１６２によって回転軸１１１が回転駆動され、これによって、ウエハチャック１１３により支持されている基板２が回転される。 (Substrate rotation holding mechanism)
8 and 9, the substrate rotation holding mechanism 110 includes a hollow cylindrical rotation shaft 111 extending vertically in the casing 101, and a turntable 112 attached to the upper end portion of the rotation shaft 111. And a wafer chuck 113 that is provided on the outer peripheral portion of the upper surface of the turntable 112 and supports the substrate 2, and a rotation mechanism 162 that rotates the rotation shaft 111. Among these, the rotation mechanism 162 is controlled by the control mechanism 160, and the rotation shaft 111 is rotationally driven by the rotation mechanism 162, whereby the substrate 2 supported by the wafer chuck 113 is rotated.

（液供給機構）
次に、基板２の表面にめっき液や洗浄液などを供給する液供給機構５０，９０について、図８および図９を参照して説明する。液供給機構５０，９０は、基板２の表面に対してめっき処理を施すめっき液を供給するめっき液供給機構５０と、基板２の表面に洗浄処理液を供給する洗浄処理液供給機構９０と、を含んでいる。 (Liquid supply mechanism)
Next, the liquid supply mechanisms 50 and 90 for supplying a plating solution and a cleaning solution to the surface of the substrate 2 will be described with reference to FIGS. The liquid supply mechanisms 50 and 90 include a plating liquid supply mechanism 50 that supplies a plating liquid that performs plating on the surface of the substrate 2, a cleaning processing liquid supply mechanism 90 that supplies a cleaning processing liquid to the surface of the substrate 2, and Is included.

図８および図９に示すように、吐出ノズル５２は、ノズルヘッド１０４に取り付けられている。またノズルヘッド１０４は、アーム１０３の先端部に取り付けられており、このアーム１０３は、上下方向に延伸可能となっており、かつ、回転機構１６５により回転駆動される支持軸１０２に固定されている。このような構成により、めっき液を、吐出ノズル５２を介して基板２の表面の任意の箇所に所望の高さから吐出することが可能となっている。   As shown in FIGS. 8 and 9, the discharge nozzle 52 is attached to the nozzle head 104. The nozzle head 104 is attached to the tip of an arm 103. The arm 103 can be extended in the vertical direction and is fixed to a support shaft 102 that is rotationally driven by a rotation mechanism 165. . With such a configuration, the plating solution can be discharged from a desired height to any location on the surface of the substrate 2 via the discharge nozzle 52.

（洗浄処理液供給機構９０）
洗浄処理液供給機構９０は、後述するように基板２の洗浄工程において用いられるものであり、図８に示すように、ノズルヘッド１０４に取り付けられたノズル９２を含んでいる。この場合、ノズル９２から、洗浄処理液またはリンス処理液のいずれかが選択的に基板２の表面に吐出される。 (Cleaning liquid supply mechanism 90)
The cleaning process liquid supply mechanism 90 is used in the cleaning process of the substrate 2 as will be described later, and includes a nozzle 92 attached to the nozzle head 104 as shown in FIG. In this case, either the cleaning processing liquid or the rinsing processing liquid is selectively discharged from the nozzle 92 onto the surface of the substrate 2.

（液排出機構）
次に、基板２から飛散しためっき液や洗浄液などを排出する液排出機構１２０，１２５，１３０について、図８を参照して説明する。図８に示すように、ケーシング１０１内には、昇降機構１６４により上下方向に駆動され、排出口１２４，１２９，１３４を有するカップ１０５が配置されている。液排出機構１２０，１２５，１３０は、それぞれ排出口１２４，１２９，１３４に集められる液を排出するものとなっている。 (Liquid discharge mechanism)
Next, the liquid discharge mechanisms 120, 125, and 130 for discharging the plating solution and the cleaning solution scattered from the substrate 2 will be described with reference to FIG. As shown in FIG. 8, a cup 105 that is driven up and down by an elevating mechanism 164 and has outlets 124, 129, and 134 is disposed in the casing 101. The liquid discharge mechanisms 120, 125, and 130 discharge the liquid collected at the discharge ports 124, 129, and 134, respectively.

図８に示すように、めっき液排出機構１２０，１２５は、流路切換器１２１，１２６により切り替えられる回収流路１２２，１２７および廃棄流路１２３，１２８をそれぞれ有している。このうち回収流路１２２，１２７は、めっき液を回収して再利用するための流路であり、一方、廃棄流路１２３，１２８は、めっき液を廃棄するための流路である。なお図８に示すように、処理液排出機構１３０には廃棄流路１３３のみが設けられている。   As shown in FIG. 8, the plating solution discharge mechanisms 120 and 125 have recovery channels 122 and 127 and discard channels 123 and 128 that are switched by channel switches 121 and 126, respectively. Of these, the recovery channels 122 and 127 are channels for recovering and reusing the plating solution, and the discard channels 123 and 128 are channels for discarding the plating solution. As shown in FIG. 8, only the disposal flow path 133 is provided in the processing liquid discharge mechanism 130.

また図８および図９に示すように、基板収容部１１０の出口側には、めっき液を排出するめっき液排出機構１２０の回収流路１２２が接続され、この回収流路１２２のうち基板収容部１１０の出口側近傍に、めっき液を冷却する冷却バッファ１２０Ａが設けられている。   Further, as shown in FIGS. 8 and 9, a recovery channel 122 of a plating solution discharge mechanism 120 that discharges the plating solution is connected to the outlet side of the substrate storage unit 110. A cooling buffer 120A for cooling the plating solution is provided in the vicinity of the 110 outlet side.

＜光学装置の製造方法＞
次にこのような構成からなる本実施の形態の作用、すなわち遮光体を含む光学装置の製造方法について図２（ａ）〜（ｅ）により説明する。 <Method for Manufacturing Optical Device>
Next, the operation of the present embodiment having such a configuration, that is, a method for manufacturing an optical device including a light shielding body will be described with reference to FIGS.

まず前工程において、半導体ウエハ等からなる基板（シリコン基板）２に対して凹部２ａが形成され、凹部２ａが形成された基板２が本発明による遮光体を含む光学装置の製造システム１０内に搬送される。この場合、基板２上には、Ｐｄイオンが吸着できる金属層２１が形成されている（図２（ａ）参照）。
First, in the previous step, a recess 2a is formed on a substrate (silicon substrate) 2 made of a semiconductor wafer or the like, and the substrate 2 on which the recess 2a is formed is transported into the optical device manufacturing system 10 including the light shielding body according to the present invention. Is done. In this case, a metal layer 21 capable of adsorbing Pd ions is formed on the substrate 2 (see FIG. 2A).

遮光体を含む光学装置の製造システム１０内において、基板２は基板搬送アーム１１によって触媒吸着層形成部１３へ送られる。そしてこの触媒吸着層形成部１３において、基板２の金属層２１上に、例えば触媒となるＰｄイオンが吸着されて触媒吸着層２２が形成される（図２（ｂ）参照）。この場合、基板２上に形成された触媒吸着層２２は、基板２表面および凹部２ａ内面に形成されている。   In the optical device manufacturing system 10 including the light shield, the substrate 2 is sent to the catalyst adsorption layer forming unit 13 by the substrate transfer arm 11. In the catalyst adsorption layer forming unit 13, for example, Pd ions serving as a catalyst are adsorbed on the metal layer 21 of the substrate 2 to form the catalyst adsorption layer 22 (see FIG. 2B). In this case, the catalyst adsorption layer 22 formed on the substrate 2 is formed on the surface of the substrate 2 and the inner surface of the recess 2a.

触媒吸着処理としては、例えば、基板２に対して塩化パラジウム水溶液をノズルにより吹付け、触媒となるＰｄイオンを基板２の表面に吸着させる処理を採用することができる。具体的には、基板２に対して塩化スズ溶液を吹付け、スズイオンを基板２表面に吸着し、次に、基板２に塩化パラジウム水溶液を吹付けてスズイオンをＰｄイオンと置換してＰｄイオンを吸着させ、さらに、基板２に水酸化ナトリウムを吹付けて余分なスズイオンを取り除く。   As the catalyst adsorption process, for example, a process in which an aqueous palladium chloride solution is sprayed onto the substrate 2 with a nozzle and Pd ions serving as a catalyst are adsorbed on the surface of the substrate 2 can be employed. Specifically, a tin chloride solution is sprayed on the substrate 2 to adsorb tin ions on the surface of the substrate 2, and then an aqueous palladium chloride solution is sprayed on the substrate 2 to replace the tin ions with Pd ions, thereby replacing the Pd ions. Further, sodium hydroxide is sprayed onto the substrate 2 to remove excess tin ions.

なお、触媒吸着層形成部１３の前段に密着層形成部を設け、この密着層形成部内において、凹部２ａを有する基板２上にシランカップリング剤等のカップリング剤を吸着させて基板２上に密着層を形成してもよい（ＳＡＭ処理）。シランカップリング剤を吸着させて形成された密着層は、触媒吸着層２２と基板２との密着性を向上させるものである。   In addition, an adhesion layer forming portion is provided in front of the catalyst adsorption layer forming portion 13, and in this adhesion layer forming portion, a coupling agent such as a silane coupling agent is adsorbed on the substrate 2 on the substrate 2 having the recess 2 a. An adhesion layer may be formed (SAM treatment). The adhesion layer formed by adsorbing the silane coupling agent improves the adhesion between the catalyst adsorption layer 22 and the substrate 2.

次に金属層２１上に触媒吸着層２２が形成された基板２は、基板搬送アーム１１により、触媒吸着層形成部１３から焼きしめ部１５内へ送られる。そして、この焼きしめ部１５の密閉ケーシング内において、基板２は、酸化を抑制するためにＮ２ガスが充てんされた不活性雰囲気中でホットプレート上で加熱される。このようにして基板２の触媒吸着層２２が焼きしめられる（Ｂａｋｅ処理）。このように触媒吸着層２２を焼きしめることにより、触媒吸着層２２内の水分を外方へ放出する。 Next, the substrate 2 on which the catalyst adsorption layer 22 is formed on the metal layer 21 is sent from the catalyst adsorption layer forming unit 13 into the baking unit 15 by the substrate transport arm 11. Then, the sealed casing of the baking unit 15, the substrate 2 is, N 2 gas is heated on a hot plate in an inert atmosphere which is filled in order to suppress oxidation. In this way, the catalyst adsorption layer 22 of the substrate 2 is baked (Bake process). By baking the catalyst adsorption layer 22 in this way, moisture in the catalyst adsorption layer 22 is released outward.

このように、焼きしめ部１５において基板２上に触媒吸着層２２を焼きしめた後、基板２は基板搬送アーム１１によってめっき層形成部１４へ送られる。   As described above, after the catalyst adsorption layer 22 is baked on the substrate 2 in the baked portion 15, the substrate 2 is sent to the plating layer forming portion 14 by the substrate transfer arm 11.

次にめっき層形成部１４において、基板２の触媒吸着層２２上に、ＣｏまたはＣｏ合金を含むめっき層２３が形成される（図２（ｃ）参照）。   Next, in the plating layer forming unit 14, a plating layer 23 containing Co or a Co alloy is formed on the catalyst adsorption layer 22 of the substrate 2 (see FIG. 2C).

この場合、めっき層形成部１４は、図８および図９に示すようなめっき処理装置からなり、基板２の触媒吸着層２２上に無電解めっき処理を施すことによりＣｏまたはＣｏ合金を含むめっき層２３を形成することができる。   In this case, the plating layer forming unit 14 includes a plating apparatus as shown in FIGS. 8 and 9, and a plating layer containing Co or a Co alloy by performing an electroless plating process on the catalyst adsorption layer 22 of the substrate 2. 23 can be formed.

めっき層形成部１４においてめっき層２３を形成する場合、めっき液としては、例えばＣｏ−Ｗ−Ｂを含むめっき液を用いることができ、めっき液の温度は４０〜７５℃（好ましくは６５℃）に保たれている。   When forming the plating layer 23 in the plating layer forming unit 14, for example, a plating solution containing Co—WB can be used as the plating solution, and the temperature of the plating solution is 40 to 75 ° C. (preferably 65 ° C.). It is kept in.

Ｃｏ−Ｗ−Ｂを含むめっき液を基板２上に供給することにより、基板２の触媒吸着層２２上に無電解めっき処理により、Ｃｏ−Ｗ−Ｂを含むめっき層２３が形成される。   By supplying a plating solution containing Co—WB on the substrate 2, a plating layer 23 containing Co—WB is formed on the catalyst adsorption layer 22 of the substrate 2 by electroless plating.

次に触媒吸着層２２上にめっき層２３が形成された基板２は、基板搬送アーム１１によりめっき層形成部１４から再び焼きしめ部１５に送られ、この焼きしめ部１５によりめっき層２３が焼きしめられる。   Next, the substrate 2 on which the plating layer 23 is formed on the catalyst adsorption layer 22 is sent again from the plating layer forming unit 14 to the baking unit 15 by the substrate transfer arm 11, and the plating layer 23 is baked by this baking unit 15. Squeezed.

このように基板２上のめっき層２３を焼きしめることにより、めっき層２３内の水分を外方へ放出することができ、同時にめっき層２３内の金属間結合を高めることができる。次に焼きしめ部１５において加熱された基板２は、基板搬送アーム１１によりレジストパターン形成部１６へ送られる。その後レジストパターン形成部１６において、基板２のめっき層２３上にレジストパターン２７が形成される。この場合、レジストパターン２７は基板２の凹部２ａに対応する位置に形成される（図２（ｄ）参照）。   By baking the plating layer 23 on the substrate 2 in this manner, moisture in the plating layer 23 can be released outward, and at the same time, the intermetallic bond in the plating layer 23 can be enhanced. Next, the substrate 2 heated in the baking unit 15 is sent to the resist pattern forming unit 16 by the substrate transfer arm 11. Thereafter, a resist pattern 27 is formed on the plating layer 23 of the substrate 2 in the resist pattern forming unit 16. In this case, the resist pattern 27 is formed at a position corresponding to the recess 2a of the substrate 2 (see FIG. 2D).

次にレジストパターン形成部１６においてレジストパターン２７が形成された基板２は、基板搬送アーム１１によりエッチング処理部１７へ送られる。そしてこのエッチング処理部１７において、レジストパターン２７をマスクとしてめっき層２３に対するエッチング処理が施される。このようにしてレジストパターン２７により覆われていないめっき層２３が除去され、基板２の凹部２ａから上方へ延びる遮光体２３Ａが形成される（図２（ｅ）参照）。次に基板２はレジストパターン除去部１７Ａまで送られ、このレジストパターン除去部１７Ａにおいて不要なレジストパターン２７が除去される。   Next, the substrate 2 on which the resist pattern 27 is formed in the resist pattern forming unit 16 is sent to the etching processing unit 17 by the substrate transport arm 11. In the etching processing unit 17, the plating layer 23 is etched using the resist pattern 27 as a mask. In this way, the plating layer 23 not covered with the resist pattern 27 is removed, and a light shield 23A extending upward from the recess 2a of the substrate 2 is formed (see FIG. 2E). Next, the substrate 2 is sent to the resist pattern removing unit 17A, and unnecessary resist pattern 27 is removed in the resist pattern removing unit 17A.

次にＣｏ−Ｗ−Ｂを含むめっき層２３からなる遮光体２３Ａの透過率を図４乃至図６により示す。   Next, the transmittance of the light shielding body 23A made of the plating layer 23 containing Co—WB is shown in FIGS.

図４に示すように、Ｃｏ−Ｗ−Ｂを含む遮光体２３Ａの赤色光の透過率は、厚さ５０〜１００ｎｍに渡って、ＮｉＢからなる遮光体、ＰＶＤにより形成されたＴａからなる遮光体、ＰＶＤにより形成されたＷからなる遮光体に比べて低く、良好な遮光特性を示している。   As shown in FIG. 4, the red light transmittance of the light shielding body 23A containing Co—W—B is 50 nm to 100 nm in thickness, the light shielding body made of NiB, and the light shielding body made of Ta formed of PVD. Compared with a light shielding body made of PVD and made of W, it is low and exhibits good light shielding characteristics.

また図５に示すように、Ｃｏ−Ｗ−Ｂを含む遮光体２３Ａの緑色光の透過率は、厚さ５０〜１００ｎｍに渡って、ＮｉＢからなる遮光体、ＰＶＤにより形成されたＴａからなる遮光体、ＰＶＤにより形成されたＷからなる遮光体に比べて低く、良好な遮光特性を示している。   Further, as shown in FIG. 5, the green light transmittance of the light shielding body 23A containing Co-WB is 50 nm to 100 nm thick, and the light shielding body made of NiB and the light shielding made of Ta formed of PVD. This is lower than a light shielding body made of PV and made of PVD, and exhibits good light shielding characteristics.

さらに図６に示すように、Ｃｏ−Ｗ−Ｂを含む遮光体２３Ａの青色光の透過率は、厚さ５０〜１００ｎｍに渡って、ＮｉＢからなる遮光体、ＰＶＤにより形成されたＴａからなる遮光体、ＰＶＤにより形成されたＷからなる遮光体に比べて低く、良好な遮光特性を示している。   Further, as shown in FIG. 6, the transmittance of the blue light of the light shielding body 23A containing Co—W—B is 50 nm to 100 nm in thickness, the light shielding body made of NiB and the light shielding made of Ta formed by PVD. This is lower than a light shielding body made of PV and made of PVD, and exhibits good light shielding characteristics.

＜本発明の変形例＞
次に本発明の変形例について図１０（ａ）〜（ｅ）および図１１（ａ）〜（ｄ）により説明する。 <Modification of the present invention>
Next, modifications of the present invention will be described with reference to FIGS. 10 (a) to 10 (e) and FIGS. 11 (a) to 11 (d).

図１０（ａ）〜（ｅ）および図１１（ａ）〜（ｄ）に示す本発明の変形例は、遮光体を含む光学装置の製造方法が異なるのみであり、他の構成は図１乃至図９に示す実施の形態と略同一である。   The modification of the present invention shown in FIGS. 10A to 10E and FIGS. 11A to 11D is only different in the manufacturing method of the optical device including the light blocking member, and other configurations are the same as those in FIGS. This is substantially the same as the embodiment shown in FIG.

図１０（ａ）〜（ｅ）および図１１（ａ）〜（ｄ）に示す変形例において、図１乃至図９に示す実施の形態と同一部分については同一符号を付して詳細な説明を省略する。   In the modification shown in FIGS. 10A to 10E and FIGS. 11A to 11D, the same parts as those in the embodiment shown in FIGS. Omitted.

＜光学装置の製造方法の第１の変形例＞
まず、光学装置の製造方法の第１の変形例について図１０（ａ）〜（ｅ）により説明する。 <First Modification of Manufacturing Method of Optical Device>
First, a first modification of the method for manufacturing an optical device will be described with reference to FIGS.

まず前工程において、半導体ウエハ等からなる基板（シリコン基板）２に対して凹部２ａが形成され、凹部２ａが形成された基板２が本発明による遮光体を含む光学装置の製造システム１０内に搬送される。この場合、基板２上には、Ｐｄイオンが吸着できる金属層２１が形成されている（図１０（ａ）参照）。   First, in the previous step, a recess 2a is formed on a substrate (silicon substrate) 2 made of a semiconductor wafer or the like, and the substrate 2 on which the recess 2a is formed is transported into the optical device manufacturing system 10 including the light shielding body according to the present invention. Is done. In this case, a metal layer 21 capable of adsorbing Pd ions is formed on the substrate 2 (see FIG. 10A).

次に遮光体を含む光学装置の製造システム１０内において、基板２は基板搬送アーム１１によって触媒吸着層形成部１３へ送られる。そしてこの触媒吸着層形成部１３において、基板２の金属層２１上に、例えば触媒となるＰｄイオンが吸着されて触媒吸着層２２が形成される（図１０（ｂ）参照）。この場合、基板２上に形成された触媒吸着層２２は、基板２表面および凹部２ａ内面に形成されている。   Next, in the optical device manufacturing system 10 including the light shield, the substrate 2 is sent to the catalyst adsorption layer forming unit 13 by the substrate transfer arm 11. In the catalyst adsorption layer forming unit 13, for example, Pd ions serving as a catalyst are adsorbed on the metal layer 21 of the substrate 2 to form the catalyst adsorption layer 22 (see FIG. 10B). In this case, the catalyst adsorption layer 22 formed on the substrate 2 is formed on the surface of the substrate 2 and the inner surface of the recess 2a.

触媒吸着処理としては、例えば、基板２に対して塩化パラジウム水溶液をノズルにより吹付け、触媒となるＰｄイオンを基板２の表面に吸着させる処理を採用することができる。具体的には、基板２に対して塩化スズ溶液を吹付け、スズイオンを基板２表面に吸着し、次に、基板２に塩化パラジウム水溶液を吹付けてスズイオンをＰｄイオンと置換してＰｄイオンを吸着させ、さらに、基板２に水酸化ナトリウムを吹付けて余分なスズイオンを取り除く。   As the catalyst adsorption process, for example, a process in which an aqueous palladium chloride solution is sprayed onto the substrate 2 with a nozzle and Pd ions serving as a catalyst are adsorbed on the surface of the substrate 2 can be employed. Specifically, a tin chloride solution is sprayed on the substrate 2 to adsorb tin ions on the surface of the substrate 2, and then an aqueous palladium chloride solution is sprayed on the substrate 2 to replace the tin ions with Pd ions, thereby replacing the Pd ions. Further, sodium hydroxide is sprayed onto the substrate 2 to remove excess tin ions.

なお、触媒吸着層形成部１３の前段に密着層形成部を設け、この密着層形成部内において、凹部２ａを有する基板２上にシランカップリング剤等のカップリング剤を吸着させて基板２上に密着層を形成してもよい（ＳＡＭ処理）。シランカップリング剤を吸着させて形成された密着層は、触媒吸着層２２と基板２との密着性を向上させるものである。   In addition, an adhesion layer forming portion is provided in front of the catalyst adsorption layer forming portion 13, and in this adhesion layer forming portion, a coupling agent such as a silane coupling agent is adsorbed on the substrate 2 on the substrate 2 having the recess 2 a. An adhesion layer may be formed (SAM treatment). The adhesion layer formed by adsorbing the silane coupling agent improves the adhesion between the catalyst adsorption layer 22 and the substrate 2.

次に金属層２１上に触媒吸着層２２が形成された基板２は、基板搬送アーム１１により、触媒吸着層形成部１３から焼きしめ部１５内へ送られる。そして、この焼きしめ部１５の密閉ケーシング内において、基板２は、酸化を抑制するためにＮ２ガスが充てんされた不活性雰囲気中でホットプレート上で加熱される。このようにして基板２の触媒吸着層２２が焼きしめられる（Ｂａｋｅ処理）。このように触媒吸着層２２を焼きしめることにより、触媒吸着層２２内の水分を外方へ放出する。 Next, the substrate 2 on which the catalyst adsorption layer 22 is formed on the metal layer 21 is sent from the catalyst adsorption layer forming unit 13 into the baking unit 15 by the substrate transport arm 11. Then, the sealed casing of the baking unit 15, the substrate 2 is, N 2 gas is heated on a hot plate in an inert atmosphere which is filled in order to suppress oxidation. In this way, the catalyst adsorption layer 22 of the substrate 2 is baked (Bake process). By baking the catalyst adsorption layer 22 in this way, moisture in the catalyst adsorption layer 22 is released outward.

このように、焼きしめ部１５において基板２上の触媒吸着層２２を焼きしめた後、基板２は基板搬送アーム１１によってレジストパターン形成部１６へ送られる。そしてこのレジストパターン形成部１６において、触媒吸着層２２上に開口２７ａを有するレジストパターン２７が形成される（図１０（ｃ）参照）。ここでレジストパターン２７の開口２７ａは基板２の凹部２ａを囲んで形成されている。   As described above, after the catalyst adsorption layer 22 on the substrate 2 is baked in the baked portion 15, the substrate 2 is sent to the resist pattern forming portion 16 by the substrate transfer arm 11. In the resist pattern forming portion 16, a resist pattern 27 having an opening 27a is formed on the catalyst adsorption layer 22 (see FIG. 10C). Here, the opening 27 a of the resist pattern 27 is formed surrounding the recess 2 a of the substrate 2.

次に基板２は基板搬送アーム１１によってめっき層形成部１４へ送られ、このめっき層形成部１４において、レジストパターン２７の開口２７ａ内にＣｏまたはＣｏ合金を含むめっき層２３が形成される（図１０（ｄ）参照）。   Next, the substrate 2 is sent to the plating layer forming unit 14 by the substrate transport arm 11, and the plating layer 23 containing Co or Co alloy is formed in the opening 27 a of the resist pattern 27 in the plating layer forming unit 14 (FIG. 10 (d)).

この場合、めっき層形成部１４は、図８および図９に示すようなめっき処理装置からなり、基板２の触媒吸着層２２上に無電解めっき処理を施すことによりＣｏまたはＣｏ合金を含むめっき層２３を形成することができる。   In this case, the plating layer forming unit 14 includes a plating apparatus as shown in FIGS. 8 and 9, and a plating layer containing Co or a Co alloy by performing an electroless plating process on the catalyst adsorption layer 22 of the substrate 2. 23 can be formed.

めっき層形成部１４においてめっき層２３を形成する場合、めっき液としては、例えばＣｏ−Ｗ−Ｂを含むめっき液を用いることができ、めっき液の温度は４０〜７５℃（好ましくは６５℃）に保たれている。   When forming the plating layer 23 in the plating layer forming unit 14, for example, a plating solution containing Co—WB can be used as the plating solution, and the temperature of the plating solution is 40 to 75 ° C. (preferably 65 ° C.). It is kept in.

Ｃｏ−Ｗ−Ｂを含むめっき液を基板２上に供給することにより、レジストパターン２７の開口２７ａ内に形成された触媒吸着層２２上に無電解めっき処理により、Ｃｏ−Ｗ−Ｂを含むめっき層２３が形成される。   By supplying a plating solution containing Co—W—B onto the substrate 2, plating containing Co—W—B is performed on the catalyst adsorption layer 22 formed in the opening 27 a of the resist pattern 27 by electroless plating. Layer 23 is formed.

次に触媒吸着層２２上にめっき層２３が形成された基板２は、基板搬送アーム１１によりめっき層形成部１４から再び焼きしめ部１５に送られ、この焼きしめ部１５によりめっき層２３が焼きしめられる。   Next, the substrate 2 on which the plating layer 23 is formed on the catalyst adsorption layer 22 is sent again from the plating layer forming unit 14 to the baking unit 15 by the substrate transfer arm 11, and the plating layer 23 is baked by this baking unit 15. Squeezed.

このように基板２上のめっき層２３を焼きしめることにより、めっき層２３内の水分を外方へ放出することができ、同時にめっき層２３内の金属間結合を高めることができる。   By baking the plating layer 23 on the substrate 2 in this manner, moisture in the plating layer 23 can be released outward, and at the same time, the intermetallic bond in the plating layer 23 can be enhanced.

次に基板２のレジストパターン２７の開口２７ａ内にめっき層２３が形成された基板２は、基板搬送アーム１１によりレジストパターン除去部１７Ａまで送られ、このレジストパターン除去部１７Ａにおいてレジストパターン２７が除去される。このようにして基板２上に凹部２ａから上方へ延びるとともにめっき層２３により形成された遮光体２３Ａを得ることができる（図１０（ｅ）参照）。   Next, the substrate 2 on which the plating layer 23 is formed in the opening 27a of the resist pattern 27 of the substrate 2 is sent to the resist pattern removing unit 17A by the substrate transport arm 11, and the resist pattern 27 is removed in the resist pattern removing unit 17A. Is done. In this manner, a light shield 23A that extends upward from the recess 2a and is formed by the plating layer 23 on the substrate 2 can be obtained (see FIG. 10E).

＜光学装置の製造方法の第２の変形例＞
次に光学装置の製造方法の第２の変形例について図１１（ａ）〜（ｃ）により説明する。 <Second Modification of Manufacturing Method of Optical Device>
Next, a second modification of the optical device manufacturing method will be described with reference to FIGS.

まず前工程において、半導体ウエハ等からなる基板（シリコン基板）２に対して凹部２ａが形成され、凹部２ａが形成された基板２が本発明による遮光体を含む光学装置の製造システム１０内に搬送される。この場合、基板２の凹部２ａの底面にはＰｄイオンが吸着できる金属層２１が形成されている。   First, in the previous step, a recess 2a is formed on a substrate (silicon substrate) 2 made of a semiconductor wafer or the like, and the substrate 2 on which the recess 2a is formed is transported into the optical device manufacturing system 10 including the light shielding body according to the present invention. Is done. In this case, a metal layer 21 capable of adsorbing Pd ions is formed on the bottom surface of the recess 2 a of the substrate 2.

次に遮光体を含む光学装置の製造システム１０内において、基板２は基板搬送アーム１１によって触媒吸着層形成部１３へ送られる。そしてこの触媒吸着層形成部１３において、基板２の凹部２ａ底面に設けられた金属層２１上に、例えば触媒となるＰｄイオンが吸着されて触媒吸着層２２が形成される（図１１（ｂ）参照）。   Next, in the optical device manufacturing system 10 including the light shield, the substrate 2 is sent to the catalyst adsorption layer forming unit 13 by the substrate transfer arm 11. In the catalyst adsorption layer forming unit 13, for example, Pd ions serving as a catalyst are adsorbed on the metal layer 21 provided on the bottom surface of the recess 2a of the substrate 2 to form the catalyst adsorption layer 22 (FIG. 11B). reference).

触媒吸着処理としては、例えば、基板２に対して塩化パラジウム水溶液をノズルにより吹付け、触媒となるＰｄイオンを基板２の凹部２ａ底面に吸着させる処理を採用することができる。具体的には、基板２に対して塩化スズ溶液を吹付け、スズイオンを基板２の凹部２ａ底面に吸着し、次に、基板２に塩化パラジウム水溶液を吹付けてスズイオンをＰｄイオンと置換してＰｄイオンを吸着させ、さらに、基板２に水酸化ナトリウムを吹付けて余分なスズイオンを取り除く。   As the catalyst adsorption process, for example, a process in which an aqueous palladium chloride solution is sprayed onto the substrate 2 with a nozzle and Pd ions serving as a catalyst are adsorbed on the bottom surface of the recess 2a of the substrate 2 can be employed. Specifically, a tin chloride solution is sprayed onto the substrate 2 to adsorb tin ions to the bottom surface of the recess 2a of the substrate 2, and then a palladium chloride aqueous solution is sprayed onto the substrate 2 to replace the tin ions with Pd ions. Pd ions are adsorbed, and sodium hydroxide is sprayed onto the substrate 2 to remove excess tin ions.

なお、触媒吸着層形成部１３の前段に密着層形成部を設け、この密着層形成部内において、凹部２ａの底面にシランカップリング剤等のカップリング剤を吸着させて基板２の凹部２ａ底面に密着層を形成してもよい（ＳＡＭ処理）。シランカップリング剤を吸着させて形成された密着層は、触媒吸着層２２と基板２の凹部２ａ底面との密着性を向上させるものである。   In addition, an adhesion layer forming portion is provided in front of the catalyst adsorption layer forming portion 13, and in this adhesion layer forming portion, a coupling agent such as a silane coupling agent is adsorbed on the bottom surface of the recess 2 a so as to be formed on the bottom surface of the recess 2 a of the substrate 2. An adhesion layer may be formed (SAM treatment). The adhesion layer formed by adsorbing the silane coupling agent improves the adhesion between the catalyst adsorption layer 22 and the bottom surface of the recess 2 a of the substrate 2.

次に凹部２ａ底面の金属層２１上に触媒吸着層２２が形成された基板２は、基板搬送アーム１１により、触媒吸着層形成部１３から焼きしめ部１５内へ送られる。そして、この焼きしめ部１５の密閉ケーシング内において、基板２は、酸化を抑制するためにＮ２ガスが充てんされた不活性雰囲気中でホットプレート上で加熱される。このようにして基板２の触媒吸着層２２が焼きしめられる（Ｂａｋｅ処理）。このように触媒吸着層２２を焼きしめることにより、触媒吸着層２２内の水分を外方へ放出する。 Next, the substrate 2 on which the catalyst adsorption layer 22 is formed on the metal layer 21 on the bottom surface of the recess 2 a is sent from the catalyst adsorption layer forming unit 13 into the baking unit 15 by the substrate transport arm 11. Then, the sealed casing of the baking unit 15, the substrate 2 is, N 2 gas is heated on a hot plate in an inert atmosphere which is filled in order to suppress oxidation. In this way, the catalyst adsorption layer 22 of the substrate 2 is baked (Bake process). By baking the catalyst adsorption layer 22 in this way, moisture in the catalyst adsorption layer 22 is released outward.

このように、焼きしめ部１５において基板２の凹部２ａ底面上の触媒吸着層２２を焼きしめた後、基板２は基板搬送アーム１１によってめっき層形成部１４へ送られる。   Thus, after baking the catalyst adsorption layer 22 on the bottom surface of the concave portion 2 a of the substrate 2 in the baking unit 15, the substrate 2 is sent to the plating layer forming unit 14 by the substrate transfer arm 11.

次にめっき層形成部１４において、基板２の触媒吸着層２２上に、ＣｏまたはＣｏ合金を含むめっき層２３が形成される（図１１（ｃ）参照）。   Next, in the plating layer forming unit 14, a plating layer 23 containing Co or a Co alloy is formed on the catalyst adsorption layer 22 of the substrate 2 (see FIG. 11C).

この場合、めっき層形成部１４は、図５および図６に示すようなめっき処理装置からなり、基板２の凹部２ａ底面に形成された触媒吸着層２２上に無電解めっき処理を施すことによりＣｏまたはＣｏ合金を含むめっき層２３を形成することができる。めっき層２３は基板２の凹部２ａ底面に形成された触媒吸着層２２から上方へ成長し、凹部２ａ全域がめっき層２３により埋め込まれる。   In this case, the plating layer forming unit 14 is composed of a plating processing apparatus as shown in FIGS. 5 and 6, and by performing electroless plating processing on the catalyst adsorption layer 22 formed on the bottom surface of the recess 2 a of the substrate 2, Co Alternatively, a plating layer 23 containing a Co alloy can be formed. The plating layer 23 grows upward from the catalyst adsorption layer 22 formed on the bottom surface of the recess 2 a of the substrate 2, and the entire recess 2 a is filled with the plating layer 23.

めっき層形成部１４においてめっき層２３を形成する場合、めっき液としては、例えばＣｏ−Ｗ−Ｂを含むめっき液を用いることができ、めっき液の温度は４０〜７５℃（好ましくは６５℃）に保たれている。   When forming the plating layer 23 in the plating layer forming unit 14, for example, a plating solution containing Co—WB can be used as the plating solution, and the temperature of the plating solution is 40 to 75 ° C. (preferably 65 ° C.). It is kept in.

Ｃｏ−Ｗ−Ｂを含むめっき液を基板２上に供給することにより、基板２の凹部２ａ底面に形成された触媒吸着層２２上に無電解めっき処理により、Ｃｏ−Ｗ−Ｂを含むめっき層２３が形成される。   By supplying a plating solution containing Co—W—B onto the substrate 2, a plating layer containing Co—WB is formed on the catalyst adsorption layer 22 formed on the bottom surface of the recess 2 a of the substrate 2 by electroless plating. 23 is formed.

次に触媒吸着層２２上にめっき層２３が形成された基板２は、基板搬送アーム１１によりめっき層形成部１４から再び焼きしめ部１５に送られ、この焼きしめ部１５によりめっき層２３が焼きしめられる。   Next, the substrate 2 on which the plating layer 23 is formed on the catalyst adsorption layer 22 is sent again from the plating layer forming unit 14 to the baking unit 15 by the substrate transfer arm 11, and the plating layer 23 is baked by this baking unit 15. Squeezed.

このように基板２上のめっき層２３を焼きしめることにより、めっき層２３内の水分を外方へ放出することができ、同時にめっき層２３内の金属間結合を高めることができる。   By baking the plating layer 23 on the substrate 2 in this manner, moisture in the plating layer 23 can be released outward, and at the same time, the intermetallic bond in the plating layer 23 can be enhanced.

このようにして基板２の凹部２ａ内にめっき層２３を埋め込むことができ、このめっき層２３によって遮光体２３Ａを得ることができる。なお凹部２ａ内に埋め込まれためっき層２３を更に成長させることにより、基板２の凹部２ａから上方へ突出する遮光体２３Ａを得ることができる。   In this way, the plating layer 23 can be embedded in the recess 2 a of the substrate 2, and the light shielding body 23 </ b> A can be obtained by the plating layer 23. Further, by further growing the plating layer 23 embedded in the recess 2a, it is possible to obtain a light shielding body 23A that protrudes upward from the recess 2a of the substrate 2.

なお、上記各実施の形態および変形例において、遮光体を含む光学装置として固体撮像素子の例を示したが、これに限らず遮光体を含む光学装置として例えばＬＥＤと、カラーフィルタと、遮光体とを含むタッチパネル付の表示装置を用いてもよい。   In each of the above-described embodiments and modifications, an example of a solid-state imaging device is shown as an optical device including a light shielding body. However, the optical device including the light shielding body is not limited thereto, and for example, an LED, a color filter, and a light shielding body. You may use the display apparatus with a touchscreen containing these.

また、上記実施例においては、めっき層形成部１４と焼きしめ部１５とを別々の装置で構成した例を示したが、これに限ることはなく、図８で示すめっき層形成部１４において、基板２の上方にランプ照射部２００（ＵＶ光など）、または基板２を覆うホットプレート（図示せず）などの加熱源を設け、めっき層形成部１４内でめっき層の焼きしめを行ってもよい。   Moreover, in the said Example, although the example which comprised the plating layer formation part 14 and the baking part 15 by a separate apparatus was shown, it is not restricted to this, In the plating layer formation part 14 shown in FIG. A heating source such as a lamp irradiation unit 200 (UV light or the like) or a hot plate (not shown) covering the substrate 2 is provided above the substrate 2, and the plating layer is baked in the plating layer forming unit 14. Good.

２ 基板
２ａ 凹部
１０ 光学装置の製造システム
１１ 基板搬送アーム
１３ 触媒吸着層形成部
１４ めっき層形成部
１５ 焼きしめ部
１６ レジストパターン形成部
１７ エッチング処理部
１７Ａ レジストパターン除去部
１８ カセットステーション
１９ 制御部
１９Ａ 記憶媒体
２１ 金属層
２２ 触媒吸着層
２３ めっき層
２３Ａ 遮光体
２７ レジストパターン
３０ 固体撮像素子
３５ カラーフィルタ層
３６ フォトダイオード 2 Substrate 2a Concave 10 Optical Device Manufacturing System 11 Substrate Transfer Arm 13 Catalyst Adsorption Layer Forming Unit 14 Plating Layer Forming Unit 15 Baking Unit 16 Resist Pattern Forming Unit 17 Etching Processing Unit 17A Resist Pattern Removing Unit 18 Cassette Station 19 Control Unit 19A Storage medium 21 Metal layer 22 Catalyst adsorption layer 23 Plating layer 23A Light shield 27 Resist pattern 30 Solid-state imaging device 35 Color filter layer 36 Photodiode

Claims (2)

遮光体を含む光学装置の製造方法において、
凹部を有する基板を準備する工程と、
前記凹部を有する基板上にＣｏ−Ｗ−Ｂを含むめっき液を供給して無電解めっき処理を施すことにより、前記凹部内から前記基板の外方へ突出するとともに、Ｃｏ−Ｗ−Ｂを含むめっき層からなる遮光体を形成する工程と、
を備え、
光が透過する遮光体の厚みは、遮光体に対し斜めに入射した入射光の方向に５０ｎｍ〜１００ｎｍとなっており、前記遮光体の厚みにおいて赤色光、緑色光、青色光の透過率は、ＮｉＢからなる遮光体、ＰＶＤにより形成されたＴａからなる遮光体、ＰＶＤにより形成されたＷからなる遮光体に比べて低く、１％未満であることを特徴とする遮光体を含む光学装置の製造方法。 In a method for manufacturing an optical device including a light shielding body,
Preparing a substrate having a recess;
By supplying a plating solution containing Co—W—B onto the substrate having the recess and performing electroless plating treatment, the substrate protrudes from the inside of the recess to the outside of the substrate and contains Co—WB. Forming a light shielding body comprising a plating layer;
With
The thickness of the light shielding member through which light passes is a 50nm~100nm in the direction of the light incident obliquely with respect to the light-shielding member, the red light, green light, the transmittance of the blue light in the thickness of the light shielding body, Manufacturing of an optical device including a light-shielding body, which is lower than a light-shielding body made of NiB, a light-shielding body made of Ta formed of PVD, and a light-shielding body made of PVD and less than 1%. Method. 遮光体を含む光学装置の製造システムに光学装置の製造方法を実行させるためのコンピュータプログラムを格納した記憶媒体において、
光学装置の製造方法は、
凹部を有する基板を準備する工程と、
前記凹部を有する基板上にＣｏ−Ｗ−Ｂを含むめっき液を供給して無電解めっき処理を施すことにより、前記凹部内から前記基板の外方へ突出するとともに、Ｃｏ−Ｗ−Ｂを含むめっき層からなる遮光体を形成する工程と、
を備え、
光が透過する遮光体の厚みは、遮光体に対し斜めに入射した入射光の方向に５０ｎｍ〜１００ｎｍとなっており、前記遮光体の厚みにおいて赤色光、緑色光、青色光の透過率は、ＮｉＢからなる遮光体、ＰＶＤにより形成されたＴａからなる遮光体、ＰＶＤにより形成されたＷからなる遮光体に比べて低く、１％未満であることを特徴とする記憶媒体。 In a storage medium storing a computer program for causing an optical device manufacturing system including a light shield to execute an optical device manufacturing method,
The manufacturing method of the optical device is as follows:
Preparing a substrate having a recess;
By supplying a plating solution containing Co—W—B onto the substrate having the recess and performing electroless plating treatment, the substrate protrudes from the inside of the recess to the outside of the substrate and contains Co—WB. Forming a light shielding body comprising a plating layer;
With
The thickness of the light shielding member through which light passes is a 50nm~100nm in the direction of the light incident obliquely with respect to the light-shielding member, the red light, green light, the transmittance of the blue light in the thickness of the light shielding body, A storage medium characterized by being lower than a light shielding body made of NiB, a light shielding body made of PVD made of Ta, and a light shielding body made of PVD made of W and less than 1%.
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