JP6336072B2 - 粒子センサ、及び、粒子センサの製造方法 - Google Patents
粒子センサ、及び、粒子センサの製造方法 Download PDFInfo
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- JP6336072B2 JP6336072B2 JP2016533826A JP2016533826A JP6336072B2 JP 6336072 B2 JP6336072 B2 JP 6336072B2 JP 2016533826 A JP2016533826 A JP 2016533826A JP 2016533826 A JP2016533826 A JP 2016533826A JP 6336072 B2 JP6336072 B2 JP 6336072B2
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- 238000000034 method Methods 0.000 title claims description 67
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- 239000000758 substrate Substances 0.000 claims description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 45
- 238000010438 heat treatment Methods 0.000 claims description 36
- 239000004020 conductor Substances 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 235000012239 silicon dioxide Nutrition 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 239000000463 material Substances 0.000 description 21
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- 239000010409 thin film Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000012777 electrically insulating material Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/06—Investigating concentration of particle suspensions
- G01N15/0656—Investigating concentration of particle suspensions using electric, e.g. electrostatic methods or magnetic methods
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/06—Investigating concentration of particle suspensions
- G01N15/0606—Investigating concentration of particle suspensions by collecting particles on a support
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
- G01N27/18—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by changes in the thermal conductivity of a surrounding material to be tested
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- Immunology (AREA)
- General Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
本発明の対象は、電気伝導性粒子を検出するための粒子センサであって、少なくとも1つの電極を備える第1の電極構造体と、少なくとも1つの電極を備える第2の電極構造体とを有し、前記第1の電極構造体及び前記第2の電極構造体は、電気絶縁性の基体の上に配置されており、前記第1の電極構造体の電極と前記第2の電極構造体の電極との間には、電位差を形成可能であり、前記基体は、前記第1の電極構造体及び前記第2の電極構造体を加熱するための発熱構造体を有し、前記発熱構造体は、前記基体によって少なくとも部分的に包囲されている、粒子センサである。
a)ベース層と、前記ベース層の上に配置された電気絶縁層と、前記電気絶縁層の上に配置された電気伝導層とを含むベース体を準備するステップと、
b)前記電気伝導層をパターニングするために、前記電気伝導層に少なくとも1つの切欠部を設けるステップと、
c)前記電気伝導層の上に電気絶縁性のカバー層を被着させるステップと、
d)前記カバー層の上に少なくとも2つの電極構造体を被着させるステップと
を含む、方法である。
本発明の各対象のさらなる利点及び有利な実施形態を図面によって示し、以下の記載において説明する。但し、これらの図面は、説明する目的でのみなされたものであり、いかなる形であっても本発明を限定することは意図されていないことに留意すべきである。
Claims (1)
- 粒子センサ(10)を製造する方法であって、
前記粒子センサ(10)は、
少なくとも1つの電極(12)を備える第1の電極構造体(14)と、少なくとも1つの電極(16)を備える第2の電極構造体(18)とを有し、
前記第1の電極構造体(14)及び前記第2の電極構造体(18)は、電気絶縁性の基体(22)の上に配置されており、
前記第1の電極構造体(14)の電極(12)と前記第2の電極構造体(18)の電極(16)との間には、電位差を形成可能であり、
前記基体(22)は、前記第1の電極構造体(14)及び前記第2の電極構造体(18)を加熱するための発熱構造体(28)を有し、
前記発熱構造体(28)は、前記基体(22)によって少なくとも部分的に包囲されており、
前記基体(22)は、二酸化ケイ素から形成されており、前記発熱構造体(28)は、ケイ素から形成されており、
前記発熱構造体(28)は、前記基体(22)内に配置されたメッシュ状の導体構造体を有し、
前記方法は、
a)ベース層(40)と、前記ベース層(40)の上に配置された電気絶縁層(42)と、前記電気絶縁層(42)の上に配置された電気伝導層(44)とを含むベース体(38)を準備するステップと、但し、前記ベース層(40)はケイ素から形成されており、
b)前記電気伝導層(44)をパターニングするために、前記電気伝導層(44)に少なくとも1つの切欠部(46)を設けるステップと、
c)前記電気伝導層(44)の上に電気絶縁性のカバー層(52)を被着させるステップと、
d)前記カバー層(52)の上に少なくとも2つの電極構造体(14,18)を被着させるステップと
を含み、
前記電気絶縁層(42)は二酸化ケイ素から形成されており、前記電気伝導層(44)はケイ素から形成されており、
前記ステップb)において、
六方格子状に配置される複数の切欠部(46)を、円形の開口部として形成し、前記円形の開口部は、円周状に閉じられており、
前記ステップc)において、
前記電気伝導層(44)として、化学変化可能な層を使用し、前記電気伝導層(44)の化学変化によって電気絶縁性の前記カバー層(52)を形成し、この際、前記切欠部(46)が再び閉鎖され、その結果、前記基体(22)内に埋め込まれた前記メッシュ状の導体構造体が形成され、
前記電気絶縁層(42)および前記カバー層(52)から形成される前記基体(22)の厚さは、20μm以上の厚さを有する、
方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2013/067036 WO2015022028A1 (de) | 2013-08-14 | 2013-08-14 | Partikelsensor und verfahren zum herstellen eines partikelsensors |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016530513A JP2016530513A (ja) | 2016-09-29 |
JP6336072B2 true JP6336072B2 (ja) | 2018-06-06 |
Family
ID=48986132
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Application Number | Title | Priority Date | Filing Date |
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JP2016533826A Expired - Fee Related JP6336072B2 (ja) | 2013-08-14 | 2013-08-14 | 粒子センサ、及び、粒子センサの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10126224B2 (ja) |
EP (1) | EP3033608A1 (ja) |
JP (1) | JP6336072B2 (ja) |
KR (1) | KR102091390B1 (ja) |
CN (1) | CN105452843B (ja) |
WO (1) | WO2015022028A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014222844B4 (de) * | 2014-11-10 | 2018-05-09 | Continental Automotive Gmbh | Rußsensor |
DE102016107888A1 (de) * | 2016-04-28 | 2017-11-02 | Heraeus Sensor Technology Gmbh | Sensor zur Detektion elektrisch leitfähiger und/oder polarisierbarer Partikel, Sensorsystem, Verfahren zum Betreiben eines Sensors und Verwendung eines derartigen Sensors |
DE102018209907A1 (de) * | 2018-06-19 | 2019-12-19 | Robert Bosch Gmbh | Resistiver Partikelsensor |
JP2022139287A (ja) | 2021-03-11 | 2022-09-26 | Mmiセミコンダクター株式会社 | 熱式センサチップ |
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2013
- 2013-08-14 CN CN201380078862.XA patent/CN105452843B/zh active Active
- 2013-08-14 JP JP2016533826A patent/JP6336072B2/ja not_active Expired - Fee Related
- 2013-08-14 EP EP13750051.8A patent/EP3033608A1/de not_active Withdrawn
- 2013-08-14 WO PCT/EP2013/067036 patent/WO2015022028A1/de active Application Filing
- 2013-08-14 US US14/911,314 patent/US10126224B2/en not_active Expired - Fee Related
- 2013-08-14 KR KR1020167003634A patent/KR102091390B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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EP3033608A1 (de) | 2016-06-22 |
CN105452843A (zh) | 2016-03-30 |
KR20160042893A (ko) | 2016-04-20 |
US20160195464A1 (en) | 2016-07-07 |
WO2015022028A1 (de) | 2015-02-19 |
US10126224B2 (en) | 2018-11-13 |
KR102091390B1 (ko) | 2020-03-20 |
JP2016530513A (ja) | 2016-09-29 |
CN105452843B (zh) | 2019-11-26 |
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