JP6335685B2 - ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 - Google Patents
ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 Download PDFInfo
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- JP6335685B2 JP6335685B2 JP2014134976A JP2014134976A JP6335685B2 JP 6335685 B2 JP6335685 B2 JP 6335685B2 JP 2014134976 A JP2014134976 A JP 2014134976A JP 2014134976 A JP2014134976 A JP 2014134976A JP 6335685 B2 JP6335685 B2 JP 6335685B2
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- 239000012530 fluid Substances 0.000 title claims description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000003825 pressing Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 101100212791 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) YBL068W-A gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
- F16K7/12—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm
- F16K7/14—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat
- F16K7/16—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat the diaphragm being mechanically actuated, e.g. by screw-spindle or cam
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16J—PISTONS; CYLINDERS; SEALINGS
- F16J3/00—Diaphragms; Bellows; Bellows pistons
- F16J3/02—Diaphragms
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
- F16K7/12—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm
- F16K7/14—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat
- F16K7/17—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat the diaphragm being actuated by fluid pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Fluid Mechanics (AREA)
- Plasma & Fusion (AREA)
- Fluid-Driven Valves (AREA)
- Lift Valve (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (7)
- 流体流入通路、流体流出通路および上向きに開口した凹所が設けられたボディと、ボディに形成された流体流入通路の周縁に配置されたシートと、シートに押圧・離間されることで流体流入通路の開閉を行う弾性変形可能な自然状態で球殻状のダイヤフラムと、ダイヤフラムの外周縁部をボディの凹所底面との間で保持する押さえアダプタと、ダイヤフラムの中央部を押圧するダイヤフラム押さえと、ダイヤフラム押さえを上下移動させる上下移動手段とを備えており、押さえアダプタは、その下面全体が所定の傾斜角度とされたテーパ状とされており、ボディの凹所底面は、円形の平坦部と、平坦部の外周に連なり平坦部に対して凹まされている凹部とを有しているダイヤフラム弁において、
ダイヤフラム押さえのダイヤフラムに当接している面の曲率半径は、30mm以上とされており、押さえアダプタの下面のテーパ角度は、ボディの凹所底面の平坦部に対して10°以下とされていることを特徴とするダイヤフラム弁。 - ボディ凹所底面の平坦部に、流体流出通路の凹所の底面に開口している部分を含むように、溝が設けられており、ダイヤフラム押さえのダイヤフラムに当接している面の曲率半径は、50mm以下とされ、押さえアダプタの下面のテーパ角度は、ボディの凹所底面の平坦部に対して5°以上とされていることを特徴とする請求項1のダイヤフラム弁。
- 流体制御機器として、開閉弁を備えている流体制御装置であって、該開閉弁が請求項1または2のいずれかに記載のダイヤフラム弁とされていることを特徴とする流体制御装置。
- 半導体製造装置で使用されることを特徴とする請求項3の流体制御装置。
- ガス供給部として請求項3の流体制御装置を備えたことを特徴とする半導体製造装置。
- 半導体製造装置は、CVD装置、スパッタリング装置またはエッチング装置であることを特徴とする請求項5の半導体製造装置。
- 請求項6の半導体製造装置を使用して半導体を製造することを特徴とする半導体製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014134976A JP6335685B2 (ja) | 2014-06-30 | 2014-06-30 | ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 |
CN201580033235.3A CN106461097B (zh) | 2014-06-30 | 2015-06-17 | 隔膜阀、流体控制装置、半导体制造装置以及半导体制造方法 |
PCT/JP2015/067432 WO2016002514A1 (ja) | 2014-06-30 | 2015-06-17 | ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 |
KR1020167031847A KR101926952B1 (ko) | 2014-06-30 | 2015-06-17 | 다이어프램 밸브, 유체 제어 장치, 반도체 제조 장치 및 반도체 제조 방법 |
US15/322,566 US10125876B2 (en) | 2014-06-30 | 2015-06-17 | Diaphragm valve, fluid control device, semiconductor manufacturing apparatus, and semiconductor manufacturing method |
TW104120878A TWI666402B (zh) | 2014-06-30 | 2015-06-29 | Diaphragm valve, fluid control device, semiconductor manufacturing device, and semiconductor manufacturing method |
Applications Claiming Priority (1)
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---|---|---|---|
JP2014134976A JP6335685B2 (ja) | 2014-06-30 | 2014-06-30 | ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2016011743A JP2016011743A (ja) | 2016-01-21 |
JP6335685B2 true JP6335685B2 (ja) | 2018-05-30 |
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JP2014134976A Active JP6335685B2 (ja) | 2014-06-30 | 2014-06-30 | ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10125876B2 (ja) |
JP (1) | JP6335685B2 (ja) |
KR (1) | KR101926952B1 (ja) |
CN (1) | CN106461097B (ja) |
TW (1) | TWI666402B (ja) |
WO (1) | WO2016002514A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7185385B2 (ja) | 2020-03-25 | 2022-12-07 | 本田技研工業株式会社 | 鞍乗型車両のフレーム構造 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6929098B2 (ja) * | 2017-03-30 | 2021-09-01 | 株式会社キッツエスシーティー | メタルダイヤフラムバルブ |
KR102361101B1 (ko) * | 2018-02-28 | 2022-02-09 | 가부시키가이샤 후지킨 | 밸브 장치 및 유체 제어 장치 |
KR102592722B1 (ko) * | 2018-03-19 | 2023-10-24 | 가부시키가이샤 프로테리아루 | 다이어프램 밸브 및 그것을 사용한 질량 유량 제어 장치 |
US11402029B2 (en) * | 2018-04-06 | 2022-08-02 | Fujikin Incorporated | Valve device, fluid control system, fluid control method, semiconductor manufacturing system, and semiconductor manufacturing method |
CN113710939A (zh) * | 2019-04-26 | 2021-11-26 | 株式会社富士金 | 隔膜、阀、以及隔膜的制造方法 |
TWI770615B (zh) * | 2020-09-22 | 2022-07-11 | 和正豐科技股份有限公司 | 氟樹脂膜片閥 |
KR20230094191A (ko) | 2020-11-04 | 2023-06-27 | 스웨이지락 캄파니 | 통합된 오리피스 제한부를 구비한 밸브 |
WO2022098688A1 (en) | 2020-11-06 | 2022-05-12 | Swagelok Company | Valve cavity cap arrangements |
KR102582673B1 (ko) * | 2023-05-24 | 2023-09-25 | 주식회사 진검물산 | 과열 방지가 개선된 휴대용 가스버너용 압력조절기 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US5449142A (en) * | 1994-12-12 | 1995-09-12 | Automatic Switch Company | Two-way cartridge valve for aggresive media |
JP3701367B2 (ja) * | 1996-02-22 | 2005-09-28 | Smc株式会社 | ポペット弁 |
US6758239B2 (en) * | 2001-11-09 | 2004-07-06 | Roger J. Gregoire | Metal diaphragm structure for pressure regulators |
WO2005038320A2 (en) * | 2003-10-17 | 2005-04-28 | Sundew Technologies, Llc | Fail safe pneumatically actuated valve |
JP2006083959A (ja) | 2004-09-16 | 2006-03-30 | Fujikin Inc | センサ付き継手部材 |
JP5138863B2 (ja) * | 2004-12-10 | 2013-02-06 | Ckd株式会社 | ダイアフラム弁 |
JP5054904B2 (ja) * | 2005-08-30 | 2012-10-24 | 株式会社フジキン | ダイレクトタッチ型メタルダイヤフラム弁 |
JP5565856B2 (ja) * | 2010-03-24 | 2014-08-06 | セイコーインスツル株式会社 | ダイアフラム、ダイアフラムバルブ、及びダイアフラムの製造方法 |
JP5331180B2 (ja) * | 2011-09-22 | 2013-10-30 | 株式会社フジキン | ダイレクトタッチ型メタルダイヤフラム弁のバルブストローク調整方法 |
JP5933370B2 (ja) * | 2012-06-29 | 2016-06-08 | 株式会社フジキン | ダイヤフラム弁 |
CN203176426U (zh) * | 2013-03-28 | 2013-09-04 | 鞍钢股份有限公司 | 一种用于镀铝锌线炉区下溜槽火炬电磁阀橡胶阀芯 |
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2014
- 2014-06-30 JP JP2014134976A patent/JP6335685B2/ja active Active
-
2015
- 2015-06-17 US US15/322,566 patent/US10125876B2/en active Active
- 2015-06-17 CN CN201580033235.3A patent/CN106461097B/zh not_active Expired - Fee Related
- 2015-06-17 KR KR1020167031847A patent/KR101926952B1/ko active IP Right Grant
- 2015-06-17 WO PCT/JP2015/067432 patent/WO2016002514A1/ja active Application Filing
- 2015-06-29 TW TW104120878A patent/TWI666402B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7185385B2 (ja) | 2020-03-25 | 2022-12-07 | 本田技研工業株式会社 | 鞍乗型車両のフレーム構造 |
Also Published As
Publication number | Publication date |
---|---|
US20170152954A1 (en) | 2017-06-01 |
TW201606219A (zh) | 2016-02-16 |
US10125876B2 (en) | 2018-11-13 |
KR101926952B1 (ko) | 2018-12-07 |
CN106461097B (zh) | 2018-10-09 |
CN106461097A (zh) | 2017-02-22 |
JP2016011743A (ja) | 2016-01-21 |
TWI666402B (zh) | 2019-07-21 |
KR20160141852A (ko) | 2016-12-09 |
WO2016002514A1 (ja) | 2016-01-07 |
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