JP6335561B2 - 垂直方向に向きが揃ったカーボンナノチューブをダイアモンド基板上に成長させる方法 - Google Patents
垂直方向に向きが揃ったカーボンナノチューブをダイアモンド基板上に成長させる方法 Download PDFInfo
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- JP6335561B2 JP6335561B2 JP2014053854A JP2014053854A JP6335561B2 JP 6335561 B2 JP6335561 B2 JP 6335561B2 JP 2014053854 A JP2014053854 A JP 2014053854A JP 2014053854 A JP2014053854 A JP 2014053854A JP 6335561 B2 JP6335561 B2 JP 6335561B2
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- carbon
- diamond
- carbon nanotubes
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 72
- 229910003460 diamond Inorganic materials 0.000 title claims description 58
- 239000010432 diamond Substances 0.000 title claims description 58
- 239000000758 substrate Substances 0.000 title claims description 55
- 239000002041 carbon nanotube Substances 0.000 title claims description 40
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims description 23
- 238000000034 method Methods 0.000 title description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 26
- 239000003054 catalyst Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 11
- 229910021389 graphene Inorganic materials 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000012071 phase Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 14
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 8
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 8
- 239000008096 xylene Substances 0.000 description 8
- 238000001878 scanning electron micrograph Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000003491 array Methods 0.000 description 5
- 230000003197 catalytic effect Effects 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000001237 Raman spectrum Methods 0.000 description 4
- 239000003575 carbonaceous material Substances 0.000 description 4
- KZPXREABEBSAQM-UHFFFAOYSA-N cyclopenta-1,3-diene;nickel(2+) Chemical compound [Ni+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KZPXREABEBSAQM-UHFFFAOYSA-N 0.000 description 4
- 238000005087 graphitization Methods 0.000 description 4
- 229930192474 thiophene Natural products 0.000 description 4
- 239000012018 catalyst precursor Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910021387 carbon allotrope Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- -1 specifically Chemical compound 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000001530 Raman microscopy Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- WVBBLFIICUWMEM-UHFFFAOYSA-N chromocene Chemical compound [Cr+2].C1=CC=[C-][CH]1.C1=CC=[C-][CH]1 WVBBLFIICUWMEM-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000012685 metal catalyst precursor Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- IWAKCRNSZSPDTB-UHFFFAOYSA-N rhodocene Chemical compound [Rh+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 IWAKCRNSZSPDTB-UHFFFAOYSA-N 0.000 description 1
- FZHCFNGSGGGXEH-UHFFFAOYSA-N ruthenocene Chemical compound [Ru+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 FZHCFNGSGGGXEH-UHFFFAOYSA-N 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/08—Aligned nanotubes
Description
Claims (5)
- 最表面を有するダイアモンド素地基板を用意し、
前記ダイアモンド素地基板を、不活性ガス雰囲気および炭素含有雰囲気から選択する少なくとも一つのの雰囲気を含む雰囲気で、少なくとも前記最表面を炭素層で被覆するのに適した、670℃から1300℃の範囲の温度にまで加熱し、
カーボンナノチューブを生成させることができる触媒と炭素源とを含む気相物質を用意し、
前記気相物質を前記炭素層に接触させ、
前記触媒からなる粒子を前記炭素層の上に堆積させ、
前記ダイアモンド素地基板の前記最表面の上に垂直方向に向きが揃っているカーボンナノチューブのアレーを製造する、垂直方向に向きが揃っているカーボンナノチューブの製造方法。 - 前記ダイアモンド素地基板は、ダイアモンド膜またはダイアモンド粒子を含む、請求項1に記載したカーボンナノチューブの製造方法。
- 前記炭素層は、グラフェンおよびグラファイトからなるグループから選択する少なくとも一つの材料を含む、請求項1に記載したカーボンナノチューブの製造方法。
- 前記触媒は、鉄、コバルト、マンガン、ニッケル、銅、モリブデンからなるグループから選ばれる少なくとも一つの金属を含む、請求項1に記載したカーボンナノチューブの製造方法。
- 前記カーボンナノチューブは前記ダイアモンド基板の前記最表面に対して垂直方向に向きが揃っている、請求項1に記載したカーボンナノチューブの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361793286P | 2013-03-15 | 2013-03-15 | |
US61/793,286 | 2013-03-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014181179A JP2014181179A (ja) | 2014-09-29 |
JP6335561B2 true JP6335561B2 (ja) | 2018-05-30 |
Family
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JP2014053854A Expired - Fee Related JP6335561B2 (ja) | 2013-03-15 | 2014-03-17 | 垂直方向に向きが揃ったカーボンナノチューブをダイアモンド基板上に成長させる方法 |
Country Status (2)
Country | Link |
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US (1) | US9643847B2 (ja) |
JP (1) | JP6335561B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101795783B1 (ko) | 2016-06-10 | 2017-12-01 | 광주과학기술원 | 금속-그래핀 이종 접합 금속 배선, 이의 형성방법 및 이를 포함하는 반도체 소자 |
US11165112B2 (en) | 2017-07-25 | 2021-11-02 | Samsung Electronics Co., Ltd. | Positive electrode for metal-air battery, metal-air battery including the same, and method of manufacturing carbon nanotube thin film |
CN112981364B (zh) * | 2021-02-05 | 2022-08-02 | 北京科技大学 | 一种快热响应超黑材料及其制备方法 |
CN113912043A (zh) * | 2021-11-30 | 2022-01-11 | 南昌大学 | 一种石墨烯/碳纳米管复合阵列材料的制备方法 |
WO2024019090A1 (ja) * | 2022-07-21 | 2024-01-25 | 学校法人東京理科大学 | カーボンナノチューブ製造装置及び製造方法 |
CN116425146A (zh) * | 2023-05-22 | 2023-07-14 | 电子科技大学 | 一种铁镍钼合金催化丙烯生长碳纳米管阵列的方法 |
Family Cites Families (14)
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US5187021A (en) * | 1989-02-08 | 1993-02-16 | Diamond Fiber Composites, Inc. | Coated and whiskered fibers for use in composite materials |
JP3411239B2 (ja) * | 1998-08-28 | 2003-05-26 | 石塚 博 | ダイヤモンド研磨材粒子及びその製法 |
GB0226590D0 (en) * | 2002-11-14 | 2002-12-24 | Univ Cambridge Tech | Method for producing carbon nanotubes and/or nanofibres |
JP4423496B2 (ja) * | 2003-09-30 | 2010-03-03 | 高知県 | 電子放出電極 |
US20070189953A1 (en) * | 2004-01-30 | 2007-08-16 | Centre National De La Recherche Scientifique (Cnrs) | Method for obtaining carbon nanotubes on supports and composites comprising same |
JP2007099601A (ja) * | 2005-10-07 | 2007-04-19 | National Institute For Materials Science | ナノカーボン材料の積層基板及びその製造方法 |
EP2014616A3 (en) * | 2005-11-25 | 2009-04-08 | National Institute for Materials Science | Carbon nanotubes, substrate and electron emission device with such carbon nanotubes and carbon nanotube synthesizing substrate as well as methods of and apparatus for making them |
US20070298168A1 (en) * | 2006-06-09 | 2007-12-27 | Rensselaer Polytechnic Institute | Multifunctional carbon nanotube based brushes |
FR2927619B1 (fr) * | 2008-02-20 | 2011-01-14 | Commissariat Energie Atomique | Croissance de nanotubes de carbone sur substrats de carbone ou metalliques. |
US8591858B2 (en) * | 2008-05-01 | 2013-11-26 | Honda Motor Co., Ltd. | Effect of hydrocarbon and transport gas feedstock on efficiency and quality of grown single-walled nanotubes |
EP2376684A4 (en) * | 2008-12-11 | 2014-05-28 | Univ Rice William M | HIGHLY BONDED CARBON NANOTUBE NETWORKS DEVELOPED DIRECTLY ON SUBSTRATES AND METHODS OF MAKING SAME |
WO2011016616A2 (ko) * | 2009-08-03 | 2011-02-10 | 인제대학교 산학협력단 | 신규한 구조의 탄소계 나노복합체 및 이의 제조방법 |
US20120181501A1 (en) * | 2011-01-13 | 2012-07-19 | Chien-Min Sung | Graphene on Diamond Devices and Associated Methods |
US8652946B2 (en) * | 2012-04-16 | 2014-02-18 | Uchicago Argonne, Llc. | Graphene layer formation on a carbon based substrate |
-
2014
- 2014-03-17 US US14/216,088 patent/US9643847B2/en active Active
- 2014-03-17 JP JP2014053854A patent/JP6335561B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2014181179A (ja) | 2014-09-29 |
US20140272137A1 (en) | 2014-09-18 |
US9643847B2 (en) | 2017-05-09 |
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