JP6334718B2 - 保護機能を有するチップとその製造のための方法 - Google Patents
保護機能を有するチップとその製造のための方法 Download PDFInfo
- Publication number
- JP6334718B2 JP6334718B2 JP2016549132A JP2016549132A JP6334718B2 JP 6334718 B2 JP6334718 B2 JP 6334718B2 JP 2016549132 A JP2016549132 A JP 2016549132A JP 2016549132 A JP2016549132 A JP 2016549132A JP 6334718 B2 JP6334718 B2 JP 6334718B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- varistor
- layer
- glass layer
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 230000009993 protective function Effects 0.000 title description 5
- 239000011521 glass Substances 0.000 claims description 85
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 38
- 239000011787 zinc oxide Substances 0.000 claims description 18
- 239000007772 electrode material Substances 0.000 claims description 8
- 239000000945 filler Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 2
- 238000010304 firing Methods 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 130
- 230000006870 function Effects 0.000 description 20
- 238000009713 electroplating Methods 0.000 description 8
- 230000002411 adverse Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 7
- 238000006731 degradation reaction Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000002378 acidificating effect Effects 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 231100000989 no adverse effect Toxicity 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical class [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical class [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/12—Overvoltage protection resistors
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
- H01C17/283—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/285—Precursor compositions therefor, e.g. pastes, inks, glass frits applied to zinc or cadmium oxide resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/1006—Thick film varistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Thermistors And Varistors (AREA)
- Details Of Resistors (AREA)
Description
厚いバリスタデバイスではこの劣化の問題は比較的僅かな劣化のみを示す一方、バリスタデバイスが薄くなるほどこの劣化は大きくなる。
これはシルクスクリーン印刷または他の位置分解能のある方法によって行われてよい。次にこの構成体全体はさらなる焼結処理が行われ、ここでしっかりと接着したメタライジング部および、こうして密度が高くまたしっかりと接着したガラス層GSが得られる。
AK : 外部接続部
BE : 電子デバイス
CH : チップ
DK : 貫通接続部
ES : 電極層
GF : グリーンシート
GS : ガラス層
LK : はんだ接続部
M : メタライジング部
VS : バリスタ層
V : バリスタ
Claims (15)
- バリスタ機能を有するチップであって、
酸化亜鉛からなるバリスタ層(VS)を備え、
前記バリスタ層においてバリスタ機能を実現する多層の電極パターンを有し、
前記バリスタ層(VS)の第1の主表面上に、少なくとも2つのはんだ付け可能な、またはボンディング可能な外部接続部(AK)を有し、
前記第1の主表面上に取り付けられおり、かつ前記外部接続部のみを覆わないようにするガラス層(GS)を有し、
前記ガラス層は、主成分としてSiおよび/またはGe,B,およびKの酸化物を含み、当該酸化物は、合計して前記ガラス層の成分の少なくとも70重量%を占め、かつAl,Ga,Cr,およびTiを実質的に含んでいない、
ことを特徴とするチップ。 - 電子デバイス(BE)を接続するための、前記バリスタ層(VS)の第2の主表面上の、電気的接続面(AF)を有することを特徴とする、請求項1に記載のチップ。
- 前記電極パターンは、少なくとも4つの、重なって配設され、交互に前記2つの外部接続部(AK)と接続されている電極層(ES)を備えることを特徴とする、請求項1または2に記載のチップ。
- 前記ガラス層(GS)は、ZnOおよびBi2O3を含んでいないことを特徴とする、請求項1乃至3のいずれか1項に記載のチップ。
- 前記ガラス層(GS)は、石英より良好な熱伝導性である充填材を含むことを特徴とする、請求項1乃至4のいずれか1項に記載のチップ。
- 前記ガラス層(GS)は、ZrO2からなる充填材粒子を含むことを特徴とする、請求項5に記載のチップ。
- 前記ガラス層(GS)は、さらなる成分として、金属の酸化物を含み、当該金属はLi,Na,Mg,Ca,Sr,およびBaから選択されており
成分Li,Naはそれぞれ最大5重量%までの割合で含まれ、これら以外の成分はそれぞれ最大15重量%まで含まれている、
ことを特徴とする、請求項1乃至6のいずれか1項に記載のチップ。 - 前記外部接続部(AK)および、場合により前記接続面(AF)は電解めっきされており、かつNi,Ag,およびAuの少なくとも1つを含むことを特徴とする、請求項1乃至7のいずれか1項に記載のチップ。
- 前記バリスタ層(VS)の前記第2の主表面上に電子デバイス(BE)が取り付けられ、前記接続面(AF)と接続されており、
当該電子デバイス(BE)は、前記電極パターンと回路接続されており、かつ前記外部接続部(AK)と回路接続されている、
ことを特徴とする、請求項2乃至8のいずれか1項に記載のチップ。 - 前記チップの厚さは最大で1000μmとなっていることを特徴とする、請求項1乃至9のいずれか1項に記載のチップ。
- 前記チップの厚さは最大で500μmとなっていることを特徴とする、請求項1乃至9のいずれか1項に記載のチップ。
- 前記チップの厚さは最大で250μmとなっていることを特徴とする、請求項1乃至9のいずれか1項に記載のチップ。
- 前記デバイス(BE)はLEDであることを特徴とする、請求項9に記載のチップ。
- バリスタ機能を有するチップ(CH)の製造のための方法であって、
電極材料が印刷された、ZnOの組成からなるグリーンシート(GF)を重ねて積層することによって積層体を生成するステップと、
前記グリーンシート(GF)の積層体を、多層の電極パターンを有する1つのバリスタ層(VS)に焼結するステップと、
外部接続部(AK)および/または接続面(AF)の画定のために、メタライジングペーストを前記バリスタ層(VS)の第1および/または第2の主表面に印刷するステップと、
後で外部接続部および/または接続面となる面が覆われないままとなるように、ガラスペースト(GP)をパターニングして印刷するステップと、
メタライジング部(M)およびパターニングされたガラス層(GS)を生成するために、前記メタライジングペーストおよび前記ガラスペーストを焼成および焼結するステップと、
前記外部接続部(AK)および/または接続面(AF)用に設けられ、前記ガラス層(GS)によって覆われていない前記メタライジング部(M)の領域を電解めっきまたは無電解めっきするステップと、
を備えることを特徴とする方法。 - 請求項14に記載の方法において、
ガラス層(GS)が印刷されて焼成され、
当該ガラス層が、主成分としてSiおよび/またはGe,B,およびKの酸化物を含み、当該酸化物が、合計して前記ガラス層の成分の少なくとも70重量%を占め、かつAl,Ga,Cr,およびTiを実質的に含んでいないことを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014101092.2A DE102014101092A1 (de) | 2014-01-29 | 2014-01-29 | Chip mit Schutzfunktion und Verfahren zur Herstellung |
DE102014101092.2 | 2014-01-29 | ||
PCT/EP2015/050006 WO2015113778A1 (de) | 2014-01-29 | 2015-01-02 | Chip mit schutzfunktion und verfahren zur herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017504974A JP2017504974A (ja) | 2017-02-09 |
JP6334718B2 true JP6334718B2 (ja) | 2018-05-30 |
Family
ID=52302217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016549132A Active JP6334718B2 (ja) | 2014-01-29 | 2015-01-02 | 保護機能を有するチップとその製造のための方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9865381B2 (ja) |
JP (1) | JP6334718B2 (ja) |
DE (1) | DE102014101092A1 (ja) |
WO (1) | WO2015113778A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI582919B (zh) * | 2015-12-31 | 2017-05-11 | 力成科技股份有限公司 | 無基板扇出型多晶片封裝構造及其製造方法 |
DE102016107497B4 (de) * | 2016-03-24 | 2020-01-30 | Tdk Electronics Ag | Multi-LED System und Verfahren zu seiner Herstellung |
DE102016108427A1 (de) | 2016-05-06 | 2017-11-09 | Epcos Ag | Multi-LED System |
US11514300B2 (en) * | 2019-06-14 | 2022-11-29 | Macronix International Co., Ltd. | Resistor circuit, artificial intelligence chip and method for manufacturing the same |
CN114284115B (zh) * | 2021-12-08 | 2024-07-12 | 深圳顺络电子股份有限公司 | 复合保护器件及其制备方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03173402A (ja) * | 1989-12-02 | 1991-07-26 | Murata Mfg Co Ltd | チップバリスタ |
DE4005011C1 (ja) | 1990-02-19 | 1991-04-25 | Schott Glaswerke, 6500 Mainz, De | |
JP3173402B2 (ja) | 1996-12-26 | 2001-06-04 | スタンレー電気株式会社 | 半導体基板の液相成長装置 |
DE60021828D1 (de) * | 1999-10-28 | 2005-09-15 | Murata Manufacturing Co | Dickschicht-Widerstand und Keramiksubstrat |
JP4556004B2 (ja) * | 2000-06-29 | 2010-10-06 | 奥野製薬工業株式会社 | セラミックカラー組成物及び板ガラスの曲げ加工方法 |
US7075405B2 (en) | 2002-12-17 | 2006-07-11 | Tdk Corporation | Multilayer chip varistor and method of manufacturing the same |
DE102005028498B4 (de) * | 2005-06-20 | 2015-01-22 | Epcos Ag | Elektrisches Vielschichtbauelement |
JP2007088173A (ja) * | 2005-09-21 | 2007-04-05 | Tdk Corp | 積層型チップバリスタ及び電子機器の製造方法 |
JP4888225B2 (ja) * | 2007-03-30 | 2012-02-29 | Tdk株式会社 | バリスタ及び発光装置 |
US7932806B2 (en) * | 2007-03-30 | 2011-04-26 | Tdk Corporation | Varistor and light emitting device |
US7683753B2 (en) * | 2007-03-30 | 2010-03-23 | Tdk Corporation | Voltage non-linear resistance ceramic composition and voltage non-linear resistance element |
DE102008024479A1 (de) | 2008-05-21 | 2009-12-03 | Epcos Ag | Elektrische Bauelementanordnung |
DE102009014542B3 (de) * | 2009-02-12 | 2010-12-02 | Epcos Ag | Mehrschichtbauelement und Verfahren zur Herstellung |
JP5652465B2 (ja) * | 2012-12-17 | 2015-01-14 | Tdk株式会社 | チップバリスタ |
-
2014
- 2014-01-29 DE DE102014101092.2A patent/DE102014101092A1/de active Granted
-
2015
- 2015-01-02 JP JP2016549132A patent/JP6334718B2/ja active Active
- 2015-01-02 US US15/113,397 patent/US9865381B2/en active Active
- 2015-01-02 WO PCT/EP2015/050006 patent/WO2015113778A1/de active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US9865381B2 (en) | 2018-01-09 |
WO2015113778A1 (de) | 2015-08-06 |
DE102014101092A1 (de) | 2015-07-30 |
US20170011827A1 (en) | 2017-01-12 |
JP2017504974A (ja) | 2017-02-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6334718B2 (ja) | 保護機能を有するチップとその製造のための方法 | |
US8319240B2 (en) | Light-emitting device | |
US9590417B2 (en) | ESD protective device | |
US9301404B2 (en) | Ceramic substrate and method of manufacturing the same | |
US8711537B2 (en) | ESD protection device and method for producing the same | |
JP2007266479A (ja) | 保護素子とその製造方法 | |
JP5590042B2 (ja) | 電子部品デバイスおよびパッケージ基板 | |
KR100709914B1 (ko) | 적층형 칩 배리스터 | |
JP2004128488A (ja) | チップ型電子部品 | |
US9338897B2 (en) | Ceramic substrate, and method of manufacturing the same | |
JP2008227139A (ja) | 静電気対策部品およびこれを用いた発光ダイオードモジュール | |
US9087623B2 (en) | Voltage nonlinear resistor ceramic composition and electronic component | |
TW200913805A (en) | Ceramic electronic component | |
JP2014036135A (ja) | 静電気保護素子とその製造方法 | |
JP2008270327A (ja) | 静電気対策部品およびこれを用いた発光ダイオードモジュール | |
JP2008085109A (ja) | 発光ダイオード実装用基板 | |
US20080224816A1 (en) | Electrostatic discharge protection component, and electronic component module using the same | |
US20080225449A1 (en) | Electrostatic discharge protection component, and electronic component module using the same | |
JP2008270325A (ja) | 静電気対策部品およびこれを用いた発光ダイオードモジュール | |
JP2012186269A (ja) | セラミック多層基板 | |
KR20170063156A (ko) | 감전보호소자 및 이를 구비한 휴대용 전자장치 | |
JP2009117667A (ja) | セラミック電子部品 | |
JP2006332121A (ja) | バリスタ | |
JP2008227138A (ja) | 静電気対策部品およびこれを用いた発光ダイオードモジュール | |
JP2008270391A (ja) | 積層型チップバリスタおよびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160928 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170825 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170906 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171107 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180411 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180426 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6334718 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |