JP6331040B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000010410 layer Substances 0.000 claims description 255
- 239000004065 semiconductor Substances 0.000 claims description 214
- 238000005530 etching Methods 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 32
- 239000012044 organic layer Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- ZWCFRCVNWBKULL-UHFFFAOYSA-N azidomethanol Chemical compound OCN=[N+]=[N-] ZWCFRCVNWBKULL-UHFFFAOYSA-N 0.000 claims description 2
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 claims description 2
- 239000012188 paraffin wax Substances 0.000 claims description 2
- 229920001807 Urea-formaldehyde Polymers 0.000 claims 1
- 229920002050 silicone resin Polymers 0.000 claims 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000011368 organic material Substances 0.000 description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000010248 power generation Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/547—Monocrystalline silicon PV cells
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
図1は、第1及び第2の実施形態の太陽電池を示す模式的平面図である。図2は、図1に示すII−II線に沿う断面の一部を拡大して示す模式的断面図である。
以下、図3〜図9を参照して、太陽電池1を製造する第1の実施形態の製造方法について説明する。
図10は、第2の実施形態の太陽電池の製造工程を説明するための模式的断面図である。本実施形態では、第1の実施形態の図4に示すように絶縁層23を形成した後、絶縁層23の上に有機物層40を形成する。有機物層40は、撥水性の有機物層であることが好ましい。有機物層40を形成するは有機物としては、シリコーン系フッ素樹脂、パラフィン系樹脂、エチレン尿素系樹脂、メチロールアジド系樹脂、シリコーン系樹脂、フッ素系樹脂等が挙げられる。有機物層40は、絶縁層23を形成した半導体基板10を有機物に浸漬する方法(浸漬法)や、蒸発させた有機物を絶縁層23の表面に供給する方法、あるいは、スプレーガンで有機物を吹き付ける方法(スプレーコート法)を用いて形成される。
10…半導体基板
10a…受光面
10b…裏面
11…光
12…半導体積層構造
12i…i型非晶質半導体層
12n…n型非晶質半導体層
13…半導体積層構造
13i…i型非晶質半導体層
13p…p型非晶質半導体層
14…n側電極
14A,15A…バスバー
14B,15B…フィンガー
15…p側電極
16…絶縁層
17i…i型非晶質半導体層
17n…n型非晶質半導体層
18…絶縁層
19a…第1の導電層
19b…第2の導電層
19c…第3の導電層
19d…第4の導電層
21…i型非晶質半導体層
22…n型非晶質半導体層
23…絶縁層
24…i型非晶質半導体層
25…p型非晶質半導体層
30…エッチングペースト
40…有機物層
R1…領域
R2…領域
R3…絶縁領域
R5…ターン領域
Claims (8)
- 半導体基板の主面上に、一導電型の第1の非晶質半導体層を形成する第1工程と、
前記第1の非晶質半導体層の上に絶縁層を形成する第2工程と、
第1の所定領域の前記絶縁層及び前記第1の非晶質半導体層をエッチングして除去する第3工程と、
前記第3工程の後に、前記絶縁層の上に一導電型と異なる他導電型の第2の非晶質半導体層を形成する第4工程と、
第2の所定領域の前記第2の非晶質半導体層をエッチングして除去する第5工程と、を備え、
前記第3工程は、
前記絶縁層の上に有機物層を形成し、当該有機物層の前記第1の所定領域の上にエッチングペーストを塗布する工程と、
前記エッチングペーストにより、前記第1の所定領域の前記絶縁層及び前記非晶質半導体層をエッチングして除去する工程と、
アルカリ水溶液を用いて前記有機物層と前記エッチングペーストとを除去する工程と、を備える、太陽電池の製造方法。 - 前記第5工程の後に、前記第1の非晶質半導体層および前記第2の非晶質半導体層の上に、導電層を形成する第6工程と、
第3の所定領域の前記導電層をエッチングして除去する第7工程と、を更に備える、請求項1に記載の太陽電池の製造方法。 - 前記第7工程は、
前記第3の所定領域を除く領域にレジストマスクを形成する工程と、
前記第3の所定領域の前記導電層をエッチング剤を用いてエッチングして除去する工程と、を備える、請求項2に記載の太陽電池の製造方法。 - 前記有機物層は、シリコーン系フッ素樹脂、パラフィン系樹脂、エチレン尿素系樹脂、メチロールアジド系樹脂、シリコーン系樹脂、フッ素系樹脂のうち少なくとも1つを含む、請求項1〜3のいずれか一項に記載の太陽電池の製造方法。
- 前記半導体基板が、結晶性半導体基板である、請求項1〜3のいずれか一項に記載の太陽電池の製造方法。
- 前記結晶性半導体基板が、結晶性シリコン基板である、請求項5に記載の太陽電池の製造方法。
- 前記非晶質半導体層が、非晶質シリコン層である、請求項5または6に記載の太陽電池の製造方法。
- 前記絶縁層が、窒化ケイ素、酸化ケイ素または酸窒化ケイ素である、請求項5〜7のいずれか一項に記載の太陽電池の製造方法。
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JP2013248010 | 2013-11-29 | ||
JP2013248010 | 2013-11-29 | ||
PCT/JP2014/074395 WO2015079779A1 (ja) | 2013-11-29 | 2014-09-16 | 太陽電池の製造方法 |
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JPWO2015079779A1 JPWO2015079779A1 (ja) | 2017-03-16 |
JP6331040B2 true JP6331040B2 (ja) | 2018-05-30 |
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US (1) | US9705027B2 (ja) |
JP (1) | JP6331040B2 (ja) |
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US10475947B2 (en) * | 2015-09-16 | 2019-11-12 | Sharp Kabushiki Kaisha | Photovoltaic device and method of manufacturing same |
KR102469945B1 (ko) * | 2017-07-14 | 2022-11-23 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조방법 |
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FR2880989B1 (fr) | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | Dispositif semi-conducteur a heterojonctions et a structure inter-digitee |
DE102005033724A1 (de) * | 2005-07-15 | 2007-01-18 | Merck Patent Gmbh | Druckfähige Ätzmedien für Siliziumdioxid-und Siliziumnitridschichten |
JP2010267787A (ja) * | 2009-05-14 | 2010-11-25 | Sharp Corp | 半導体装置の製造方法 |
WO2011093329A1 (ja) * | 2010-01-26 | 2011-08-04 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
JP5485060B2 (ja) * | 2010-07-28 | 2014-05-07 | 三洋電機株式会社 | 太陽電池の製造方法 |
WO2012132613A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換素子の製造方法 |
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JPWO2015079779A1 (ja) | 2017-03-16 |
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WO2015079779A1 (ja) | 2015-06-04 |
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