JP6329083B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP6329083B2 JP6329083B2 JP2014554281A JP2014554281A JP6329083B2 JP 6329083 B2 JP6329083 B2 JP 6329083B2 JP 2014554281 A JP2014554281 A JP 2014554281A JP 2014554281 A JP2014554281 A JP 2014554281A JP 6329083 B2 JP6329083 B2 JP 6329083B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- phosphor
- red
- phosphor layer
- far
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 479
- 230000005284 excitation Effects 0.000 claims description 68
- 229920005989 resin Polymers 0.000 claims description 61
- 239000011347 resin Substances 0.000 claims description 61
- 238000007789 sealing Methods 0.000 claims description 28
- 239000000126 substance Substances 0.000 claims description 25
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 16
- 229910052791 calcium Inorganic materials 0.000 claims description 12
- 229910052712 strontium Inorganic materials 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 230000031700 light absorption Effects 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- 102100032047 Alsin Human genes 0.000 claims description 6
- 101710187109 Alsin Proteins 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 35
- 229920002050 silicone resin Polymers 0.000 description 26
- 238000000034 method Methods 0.000 description 16
- 230000000694 effects Effects 0.000 description 13
- 230000005484 gravity Effects 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000011575 calcium Substances 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 10
- 230000008635 plant growth Effects 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 8
- 239000011362 coarse particle Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 8
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 8
- 239000002223 garnet Substances 0.000 description 8
- 230000029553 photosynthesis Effects 0.000 description 8
- 238000010672 photosynthesis Methods 0.000 description 8
- 229910052727 yttrium Inorganic materials 0.000 description 8
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 7
- 230000012010 growth Effects 0.000 description 7
- 230000017260 vegetative to reproductive phase transition of meristem Effects 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000004062 sedimentation Methods 0.000 description 5
- 238000000862 absorption spectrum Methods 0.000 description 4
- 230000019552 anatomical structure morphogenesis Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 229910052693 Europium Inorganic materials 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910005793 GeO 2 Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229930002875 chlorophyll Natural products 0.000 description 3
- 235000019804 chlorophyll Nutrition 0.000 description 3
- ATNHDLDRLWWWCB-AENOIHSZSA-M chlorophyll a Chemical compound C1([C@@H](C(=O)OC)C(=O)C2=C3C)=C2N2C3=CC(C(CC)=C3C)=[N+]4C3=CC3=C(C=C)C(C)=C5N3[Mg-2]42[N+]2=C1[C@@H](CCC(=O)OC\C=C(/C)CCC[C@H](C)CCC[C@H](C)CCCC(C)C)[C@H](C)C2=C5 ATNHDLDRLWWWCB-AENOIHSZSA-M 0.000 description 3
- 230000035784 germination Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000013305 food Nutrition 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 206010021033 Hypomenorrhoea Diseases 0.000 description 1
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 241000607479 Yersinia pestis Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000001720 action spectrum Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004371 high visual acuity Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000000243 photosynthetic effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 235000013311 vegetables Nutrition 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7708—Vanadates; Chromates; Molybdates; Tungstates
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G7/00—Botany in general
- A01G7/04—Electric or magnetic or acoustic treatment of plants for promoting growth
- A01G7/045—Electric or magnetic or acoustic treatment of plants for promoting growth with electric lighting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
- Y02P60/14—Measures for saving energy, e.g. in green houses
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Botany (AREA)
- Ecology (AREA)
- Forests & Forestry (AREA)
- Environmental Sciences (AREA)
- Biodiversity & Conservation Biology (AREA)
- Led Device Packages (AREA)
Description
本発明の発光装置の第1実施形態について説明する前に、植物の育成について簡潔に説明を行う。光は発芽や開花、茎の伸長等の刺激源、情報源として作用する。植物の光合成作用はクロロフィル(葉緑素)が光を吸収することによって行われる。クロロフィルによる光の吸収がピークになる波長領域は2箇所あり、第1の領域は波長400nm〜500nmの範囲(より詳細には波長450nm付近)、第2の領域は波長600nm〜700nm(より詳細には波長660nm付近)の範囲である。
図5は第2実施形態の発光装置を示す上面図である。図6は図5に示す発光装置のA−AにおけるXY断面での側面図である。基板上に実装されるLEDは第1実施形態と同様であるため図示を省略する。また、第1実施形態と構成が同一である部分については説明を一部省略する。
図7は第3実施形態の発光装置を示す上面図である。図8は図7に示す発光装置のB−BにおけるXY断面での側面図である。図9は第3実施形態において基板上に実装されるLEDを示す上面図である。図10は蛍光体層とLEDの位置関係を示す模式図である。なお、図10は蛍光体層とLEDの位置関係が分かりやすくなるよう、第1の蛍光体10を示す△印及び第2の蛍光体11を示す○印を省略している。
上記第1実施形態では、蛍光体層が遠赤色蛍光体を含有して成り、第2実施形態及び第3実施形態では、第1の蛍光体層が封止樹脂であるシリコーン樹脂に第1の蛍光体(赤色蛍光体)を含有してなり、第2の蛍光体層が封止樹脂であるシリコーン樹脂に第2の蛍光体(遠赤色蛍光体)を含有してなることとしたがこれに限られるものではなく、他の物質を含むものであってもよい。本実施形態は第2実施形態の変形例として以下説明を行うが、第1実施形態又は第3実施形態に適用することとしてもよい。
上記第1実施形態では蛍光体層が封止樹脂であるシリコーン樹脂に遠赤色蛍光体を含有してなり、第2実施形態及び第3実施形態では、第1の蛍光体層が封止樹脂であるシリコーン樹脂に第1の蛍光体(赤色蛍光体)を含有してなり、第2の蛍光体層が封止樹脂であるシリコーン樹脂に第2の蛍光体(遠赤色蛍光体)を含有してなることとしたがこれに限られるものではなく、他の蛍光体(第3の蛍光体)を含むものであってもよい。本実施形態は第3実施形態の変形例として以下説明を行うが、第1実施形態又は第2実施形態に適用することとしてもよい。
上記第1実施形態〜第5実施形態ではチップ・オン・ボード型の発光装置を示したが、これに限られるものではない。そこで第6実施形態ではマウント・リード・カップ型の発光装置を示す。本実施形態は第2実施形態の変形例として以下説明を行うが、第1実施形態又は第3実施形態〜第5実施形態に適用することとしてもよい。
上記各実施形態の発光装置1から発せられる光のスペクトル分布として、第6実施形態に示す発光装置1のLED5を全て点灯させた場合のスペクトル分布を図17に示す。図17に示すように発光装置1から発せられる光のスペクトル分布は、波長400nm〜480nmの範囲に第1のピーク波長を有し、波長600nm〜700nmの範囲に第2のピーク波長を有し、波長700nm〜800nmの範囲に第3のピーク波長を有する。すなわち植物の正常な形態形成や光合成に必要な青色光、赤色光に加えて遠赤色光が含まれる。遠赤色光と赤色光を同時照射すると、エマーソン効果により植物の光合成が促進される。
上記各実施形態では遠赤色蛍光体として、化学式(Ln1−xCrx)3M5O12(Lnは3価の金属元素でありY、La、Gd、Luから選ばれる少なくとも1種の元素、Mは3価の金属元素でありAl、Ga、Inから選ばれる少なくとも1種の元素、xは次式0.005≦x≦0.2を満たす数)で示される蛍光体でよいとした。具体的には、Y3All3O12:Cr、Y3Ga5O12:Cr、Gd3Al15O12:Cr、Y3All3O12:Cr、Y3All5O12:Eu、Y3All5O12:Cr、Y3All2Ga3O12:Cr、Y3All1Ga4O12:Crが挙げられ、遠赤色蛍光体としてはこれらの中から少なくとも1つを含めばよい。
以上のことから本発明は以下のようにまとめることができる。
2 基板
3 配線パターン
4 電極ランド
5 LED(発光素子)
6 蛍光体層
7 樹脂枠
10 第1の蛍光体(赤色蛍光体)
11 第2の蛍光体(遠赤色蛍光体)
51 LEDチップ
52 導電性ワイヤ
61、63、65 第1の蛍光体層
62、64、66 第2の蛍光体層
Claims (3)
- 400nm〜480nmの範囲内にピーク波長を有する少なくとも1個以上の発光素子と、前記発光素子を覆う樹脂封止層と、を備え、
前記樹脂封止層は、
前記発光素子の励起光に励起されて700nm〜800nmの範囲内にピーク波長を有する光を発する遠赤色蛍光体と、
前記発光素子の励起光に励起されて600nm〜700nmの範囲内にピーク波長を有する光を発する少なくとも1種類以上の赤色蛍光体と、
を含み、
前記遠赤色蛍光体による前記赤色蛍光体から発せられる光の吸収が抑制されるように前記遠赤色蛍光体及び前記赤色蛍光体を含む蛍光体層を形成し、
前記蛍光体層は前記赤色蛍光体の濃度が前記遠赤色蛍光体の濃度よりも高い第1の蛍光体層と前記遠赤色蛍光体の濃度が前記赤色蛍光体の濃度よりも高い第2の蛍光体層と有し、
前記発光素子は第1の蛍光体層に対して励起光を発光する第1の発光素子群と第2の蛍光体層に対して励起光を発光する第2の発光素子群とを有し、第1の発光素子群と第2の発光素子群は個別に点灯/消灯制御可能であり、
前記遠赤色蛍光体のメディアン径が1μm以上7μm未満の範囲内である発光装置。 - 400nm〜480nmの範囲内にピーク波長を有する少なくとも1個以上の発光素子と、前記発光素子を覆う樹脂封止層と、を備え、
前記樹脂封止層は、
前記発光素子の励起光に励起されて700nm〜800nmの範囲内にピーク波長を有する光を発する遠赤色蛍光体(Ln1−xCrx)3M5O12で示される蛍光体(LnはY、La、Gd、Luから選ばれる少なくとも1種の元素、MはAl、Ga、Inから選ばれる少なくとも1種の元素、xは次式0.005≦x≦0.2を満たす数)と、
前記発光素子の励起光に励起されて600nm〜700nmの範囲内にピーク波長を有する光を発する第一赤色蛍光体CaAlSiN3:Eu系蛍光体と、
前記発光素子の励起光に励起されて600nm〜700nmの範囲内かつ前記第一赤色蛍光体よりも発光ピーク波長が短い光を発する第二赤色蛍光体(Sr,Ca)AlSiN3:Eu系蛍光体を含み、
前記遠赤色蛍光体のメディアン径が1μm以上7μm未満の範囲内である発光装置。 - 植物栽培用に用いられる請求項1または請求項2に記載の発光装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012287123 | 2012-12-28 | ||
JP2012287123 | 2012-12-28 | ||
PCT/JP2013/082911 WO2014103671A1 (ja) | 2012-12-28 | 2013-12-09 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2014103671A1 JPWO2014103671A1 (ja) | 2017-01-12 |
JP6329083B2 true JP6329083B2 (ja) | 2018-05-23 |
Family
ID=51020763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014554281A Expired - Fee Related JP6329083B2 (ja) | 2012-12-28 | 2013-12-09 | 発光装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9504207B2 (ja) |
JP (1) | JP6329083B2 (ja) |
CN (1) | CN104871323B (ja) |
WO (1) | WO2014103671A1 (ja) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9614130B2 (en) * | 2013-11-08 | 2017-04-04 | Sharp Kabushiki Kaisha | Light emitting device and illumination device |
US10431568B2 (en) * | 2014-12-18 | 2019-10-01 | Cree, Inc. | Light emitting diodes, components and related methods |
US10342091B2 (en) | 2015-03-13 | 2019-07-02 | Sharp Kabushiki Kaisha | Light-emitting device |
US10205065B2 (en) | 2015-04-02 | 2019-02-12 | Sharp Kabushiki Kaisha | Light-emitting device |
JP6869000B2 (ja) * | 2015-10-23 | 2021-05-12 | シチズン電子株式会社 | 発光モジュール |
CN105405954A (zh) * | 2015-10-23 | 2016-03-16 | 电子科技大学 | 一种用于植物照明的led灯 |
JP6644081B2 (ja) * | 2015-11-04 | 2020-02-12 | シャープ株式会社 | 発光装置、照明装置、および発光装置が備える発光体の製造方法 |
US10784416B2 (en) * | 2016-03-24 | 2020-09-22 | Sharp Kabushiki Kaisha | Light source device and light emitting device |
WO2017188191A1 (ja) * | 2016-04-25 | 2017-11-02 | 日本特殊陶業株式会社 | 波長変換部材、その製造方法および発光装置 |
KR20170131148A (ko) * | 2016-05-18 | 2017-11-29 | 서울바이오시스 주식회사 | 포충기 |
JP6507434B2 (ja) * | 2016-06-06 | 2019-05-08 | エムテックスマート株式会社 | Ledの製造方法及びled |
JP6481663B2 (ja) | 2016-06-29 | 2019-03-13 | 日亜化学工業株式会社 | 発光装置及び植物栽培方法 |
JP2018074015A (ja) * | 2016-10-31 | 2018-05-10 | 交和電気産業株式会社 | 照明装置モジュール |
CN106784264A (zh) * | 2017-01-24 | 2017-05-31 | 广东绿爱生物科技股份有限公司 | 一种促进果实饱满的led光源 |
CN106876559A (zh) * | 2017-01-24 | 2017-06-20 | 广东绿爱生物科技股份有限公司 | 一种促进育苗生长的led光源 |
WO2018143198A1 (ja) * | 2017-01-31 | 2018-08-09 | 三菱ケミカル株式会社 | 発光装置、および蛍光体 |
EP3648183B1 (en) * | 2017-06-28 | 2022-08-24 | KYOCERA Corporation | Light emitting device and illumination device |
JP7009879B2 (ja) * | 2017-09-26 | 2022-01-26 | 豊田合成株式会社 | 発光装置 |
KR20210126138A (ko) | 2017-09-28 | 2021-10-19 | 루미리즈 홀딩 비.브이. | 발광 디바이스용 파장 변환 재료 |
JP6974740B2 (ja) * | 2017-11-30 | 2021-12-01 | 日亜化学工業株式会社 | 発光装置、照明装置及び植物栽培方法 |
EP3492554B1 (en) | 2017-11-30 | 2020-08-19 | Nichia Corporation | Light emitting device, illumination device and plant cultivation method |
JPWO2019146327A1 (ja) * | 2018-01-29 | 2021-01-07 | 京セラ株式会社 | 発光装置および照明装置 |
JP7185126B2 (ja) * | 2018-03-14 | 2022-12-07 | 日亜化学工業株式会社 | 照明装置及び植物栽培方法 |
CN109192844A (zh) * | 2018-08-30 | 2019-01-11 | 合肥工业大学智能制造技术研究院 | 一种用于视网膜细胞修复与再生的led发光器件及应用 |
US11396628B2 (en) | 2018-09-10 | 2022-07-26 | Nichia Corporation | Near-infrared light emitting fluorescent material |
EP3904488B1 (en) | 2018-12-27 | 2024-07-24 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device, electronic device, and method for using light-emitting device |
WO2020177257A1 (zh) * | 2019-03-06 | 2020-09-10 | 有研稀土新材料股份有限公司 | 一种红光及近红外发光材料、制备方法及发光器件 |
US11477945B2 (en) | 2019-03-13 | 2022-10-25 | Current Lighting Solutions, Llc | Horticulture lighting device |
JP7296563B2 (ja) * | 2019-05-27 | 2023-06-23 | パナソニックIpマネジメント株式会社 | 発光装置並びにそれを用いた電子機器及び検査方法 |
CN110531554A (zh) * | 2019-08-29 | 2019-12-03 | 合肥工业大学智能制造技术研究院 | 促进视网膜细胞与视神经元生长与修复的显示器光源模组、显示屏及应用 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002199816A (ja) * | 2000-08-31 | 2002-07-16 | Toshiba Lighting & Technology Corp | 発光装置および照明装置 |
JP2006324589A (ja) | 2005-05-20 | 2006-11-30 | Sharp Corp | Led装置およびその製造方法 |
CN100517781C (zh) * | 2005-05-30 | 2009-07-22 | 夏普株式会社 | 发光器件及其制造方法 |
JP2008109048A (ja) * | 2006-10-27 | 2008-05-08 | Toshiba Corp | 光半導体装置及び光伝送装置 |
JP2009019163A (ja) * | 2007-07-13 | 2009-01-29 | Sharp Corp | 発光装置用蛍光体粒子集合体、発光装置、および液晶表示用バックライト装置 |
JP5286585B2 (ja) * | 2007-10-05 | 2013-09-11 | シャープ株式会社 | 発光装置 |
JP5104621B2 (ja) | 2008-07-28 | 2012-12-19 | 三菱化学株式会社 | 植物育成用の照明装置 |
CN101725843B (zh) * | 2008-10-20 | 2012-07-04 | 展晶科技(深圳)有限公司 | 配置高色彩饱和度的发光二极管背光模块的***与方法 |
LT5688B (lt) * | 2008-11-07 | 2010-09-27 | Uab "Hortiled" | Konversijos fosfore šviesos diodas, skirtas augalų fotomorfogeneziniams poreikiams tenkinti |
JP2011155948A (ja) * | 2010-02-03 | 2011-08-18 | Seiwa Electric Mfg Co Ltd | 植物育成用発光装置 |
EP2717338B1 (en) * | 2011-05-27 | 2018-08-01 | Sharp Kabushiki Kaisha | Light emitting device and lighting device |
CN102504811B (zh) * | 2011-11-02 | 2014-03-26 | 天津理工大学 | 蓝紫光激发的660纳米红光荧光材料及高温微波制备法 |
-
2013
- 2013-12-09 JP JP2014554281A patent/JP6329083B2/ja not_active Expired - Fee Related
- 2013-12-09 US US14/655,454 patent/US9504207B2/en active Active
- 2013-12-09 WO PCT/JP2013/082911 patent/WO2014103671A1/ja active Application Filing
- 2013-12-09 CN CN201380066629.XA patent/CN104871323B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US9504207B2 (en) | 2016-11-29 |
JPWO2014103671A1 (ja) | 2017-01-12 |
CN104871323B (zh) | 2018-07-13 |
WO2014103671A1 (ja) | 2014-07-03 |
US20150357532A1 (en) | 2015-12-10 |
CN104871323A (zh) | 2015-08-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6329083B2 (ja) | 発光装置 | |
EP2757600B1 (en) | Light emitting apparatus and method for manufacturing same | |
US10084119B2 (en) | Light-emitting device | |
JP5864851B2 (ja) | 発光装置 | |
EP2356702B1 (en) | Phosphor conversion light-emitting diode for meeting photomorphogenetic needs of plants | |
CN101855492B (zh) | 照明装置 | |
CN102959310B (zh) | Led灯泡 | |
JP5029203B2 (ja) | 照明装置 | |
US20060181192A1 (en) | White LEDs with tailorable color temperature | |
US20150327446A1 (en) | Led light source for plant cultivation | |
DE102015100294A1 (de) | Lichtemittierende Halbleitervorrichtung | |
US20130188333A1 (en) | Led light bulb | |
KR20060118584A (ko) | 형광체, 그 제조방법 및 그 형광체를 사용한 발광장치 | |
CN108305929A (zh) | 具有高显色性的白光发光装置 | |
WO2020200326A1 (zh) | 全光谱led植物照明光源 | |
JP6106307B2 (ja) | 発光装置、並びに、当該発光装置を用いた照明器具及び表示装置 | |
KR20130067205A (ko) | 식물 생장용 발광 다이오드 | |
JP2015046607A (ja) | 発光装置 | |
US7931517B2 (en) | LED-based white-light lighting module for preventing glare and providing adjustable color temperature | |
JP2006080443A (ja) | 発光ダイオード及び発光ダイオード製造方法 | |
CA3148260A1 (en) | Light source unit for plant cultivation, and plant cultivation device including same | |
JP5566822B2 (ja) | Led電球 | |
JP5921631B2 (ja) | 発光装置 | |
KR20140045807A (ko) | 형광체 및 발광 장치 | |
US11887973B2 (en) | Full spectrum white light emitting devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20161108 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170208 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20170215 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20170421 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180207 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180419 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6329083 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |