JP6328420B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP6328420B2 JP6328420B2 JP2013265600A JP2013265600A JP6328420B2 JP 6328420 B2 JP6328420 B2 JP 6328420B2 JP 2013265600 A JP2013265600 A JP 2013265600A JP 2013265600 A JP2013265600 A JP 2013265600A JP 6328420 B2 JP6328420 B2 JP 6328420B2
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- 239000004065 semiconductor Substances 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 48
- 238000000926 separation method Methods 0.000 claims description 19
- 239000010410 layer Substances 0.000 description 115
- 239000005022 packaging material Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- -1 InGaN / InGaN Chemical compound 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- FJMNNXLGOUYVHO-UHFFFAOYSA-N aluminum zinc Chemical compound [Al].[Zn] FJMNNXLGOUYVHO-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Description
Claims (16)
- 基板と、
前記基板上に互いに離隔して配置された複数の発光セルと、
前記複数の発光セルのうち隣接する発光セルを電気的に接続する連結配線とを含み、
前記複数の発光セルは、前記隣接する発光セルのセットを複数含み、
前記隣接する発光セルのうちの第1発光セルは第1セグメントを含み、前記隣接する発光セルのうちの第2発光セルは、前記第1セグメントと対向する第2セグメントを含み、
前記第1セグメントは、前記第1発光セルの側面のうちの一部に該当し、
前記第2セグメントは、前記第2発光セルの側面のうちの一部に該当し、
それぞれが前記連結配線と接する端面を有して互いに対向する前記第1及び第2セグメントの間の第1離隔距離よりも、それぞれが前記連結配線と接しない端面を有して互いに対向する前記第1及び第2セグメントの間の第2離隔距離がさらに小さく、
前記第1セグメントは、
前記連結配線と接する端面を有する第1−1セグメントと、
前記第1−1セグメントの両側からそれぞれ延び、前記連結配線と接しない端面をそれぞれ有する2つの第1−2セグメントとを含み、
前記第2セグメントは、
前記連結配線と接する端面を有し、前記第1−1セグメントと対向する第2−1セグメントと、
前記第2−1セグメントの両側からそれぞれ延び、前記連結配線と接しない端面をそれぞれ有し、前記2つの第1−2セグメントと対向する2つの第2−2セグメントとを含み、
前記第1−2セグメントの前記第2−2セグメントと対向する前記端面は、前記第1−1セグメントの前記第2−1セグメントと対向する前記端面よりも第1突出長さだけさらに突出し、
前記第2−2セグメントの前記第1−2セグメントと対向する前記端面は、前記第2−1セグメントの前記第1−1セグメントと対向する前記端面よりも第2突出長さだけさらに突出した、発光素子。 - 前記第1突出長さと前記第2突出長さは互いに異なる、請求項1に記載の発光素子。
- 前記第1−1セグメントの端面の幅と前記第2−1セグメントの端面の幅は互いに異なる、請求項1又は2に記載の発光素子。
- 前記第1−2セグメントの端面の幅と前記第2−2セグメントの端面の幅は互いに異なる、請求項1ないし3のいずれかに記載の発光素子。
- 前記隣接する発光セルのそれぞれは、
前記基板上に配置された第1導電型半導体層と、
前記第1導電型半導体層上に配置された活性層と、
前記活性層上に配置された第2導電型半導体層とを含む、請求項1ないし4のいずれかに記載の発光素子。 - 前記第1−1セグメントにおいて前記第1導電型半導体層の端面は前記連結配線と接し、前記第2−1セグメントにおいて前記第2導電型半導体層の端面は前記連結配線と接し、
前記第1−1セグメントの前記端面は、前記第1導電型半導体層の前記端面に該当し、
前記第2−1セグメントの前記端面は、前記第2導電型半導体層の前記端面に該当する、請求項5に記載の発光素子。 - 前記第1突出長さと前記第2突出長さは互いに同一である、請求項1に記載の発光素子。
- 前記第1−1セグメントの端面の幅と前記第2−1セグメントの端面の幅は互いに同一である、請求項1又は2に記載の発光素子。
- 前記第1−2セグメントの端面の幅と前記第2−2セグメントの端面の幅は互いに同一である、請求項1、7及び8のいずれかに記載の発光素子。
- 前記第1−1セグメントの端面と前記第2−1セグメントの端面との間の前記第1離隔距離は10μm〜55μmである、請求項1ないし9のいずれかに記載の発光素子。
- 前記第1−2セグメントの端面と前記第2−2セグメントの端面との間の前記第2離隔距離は5μm〜50μmである、請求項1ないし10のいずれかに記載の発光素子。
- 前記第1−1セグメントの端面の幅は5μm〜8μmである、請求項1ないし11のいずれかに記載の発光素子。
- 前記第2−1セグメントの端面の幅は5μm〜8μmである、請求項1ないし12のいずれかに記載の発光素子。
- 下記式に示した分だけ増加した発光領域を有する、請求項1ないし13のいずれかに記載の発光素子。
(ここで、TPAは、前記発光領域の増加面積を示し、W12は、前記第1−2セグメントの端面の幅を示し、△L1は、前記第1−2セグメントの前記第2−2セグメントと対向する端面が、前記第1−1セグメントの前記第2−1セグメントと対向する端面よりさらに突出した第1突出長さを示し、W22は、前記第2−2セグメントの端面の幅を示し、△L2は、前記第2−2セグメントの前記第1−2セグメントと対向する端面が、前記第2−1セグメントの前記第1−1セグメントと対向する端面よりさらに突出した第2突出長さを示し、Mは、前記複数の発光セルの個数を示す。) - 基板と、
前記基板上に互いに離隔して配置された複数の発光セルと、
前記複数の発光セルのうち第1方向において隣接する発光セルを電気的に接続する連結配線とを含み、
前記複数の発光セルは、前記第1方向において前記隣接する発光セルのセットを複数含み、
前記隣接する発光セルのうちの第1発光セルは第1セグメントを含み、前記隣接する発光セルのうちの第2発光セルは、前記第1セグメントと対向する第2セグメントを含み、
前記第1セグメントは、前記第1発光セルの側面のうちの一部に該当し、
前記第2セグメントは、前記第2発光セルの側面のうちの一部に該当し、
前記第1セグメントは、
前記連結配線と接する端面を有する第1−1セグメントと、
前記第1−1セグメントの両側からそれぞれ延び、前記連結配線と接しない端面をそれぞれ有する2つの第1−2セグメントとを含み、
前記第2セグメントは、
前記連結配線と接する端面を有し、前記第1−1セグメントと対向する第2−1セグメントと、
前記第2−1セグメントの両側からそれぞれ延び、前記連結配線と接しない端面をそれぞれ有し、前記2つの第1−2セグメントと対向する2つの第2−2セグメントとを含み、
互いに対向する前記第1−1セグメントと前記第2−1セグメントとの間の第1離隔距離は、前記第1−2セグメントと前記第2−2セグメントとの間の第2離隔距離よりも大きく、
前記第1発光セルは、前記第1方向と異なる第2方向において隣接する第3発光セルと前記連結配線によって電気的に直接接続されず、
前記第1離隔距離は、前記第1発光セルと前記第3発光セルとの間の第3離隔距離よりも大きく、
前記第1−2セグメントの前記第2−2セグメントと対向する前記端面は、前記第1−1セグメントの前記第2−1セグメントと対向する前記端面よりも第1突出長さだけさらに突出し、
前記第2−2セグメントの前記第1−2セグメントと対向する前記端面は、前記第2−1セグメントの前記第1−1セグメントと対向する前記端面よりも第2突出長さだけさらに突出した、発光素子。 - 基板と、
前記基板上に互いに離隔して配置された複数の発光セルと、
前記複数の発光セルのうち第1方向において隣接する発光セルを電気的に接続する連結配線とを含み、
前記複数の発光セルは、前記第1方向において前記隣接する発光セルのセットを複数含み、
前記隣接する発光セルのうちの第1発光セルは第1セグメントを含み、前記隣接する発光セルのうちの第2発光セルは、前記第1セグメントと対向する第2セグメントを含み、
前記第1セグメントは、前記第1発光セルの側面のうちの一部に該当し、
前記第2セグメントは、前記第2発光セルの側面のうちの一部に該当し、
前記第1セグメントは、
前記連結配線と接する端面を有する第1−1セグメントと、
前記第1−1セグメントの両側からそれぞれ延び、前記連結配線と接しない端面をそれぞれ有する2つの第1−2セグメントとを含み、
前記第2セグメントは、
前記連結配線と接する端面を有し、前記第1−1セグメントと対向する第2−1セグメントと、
前記第2−1セグメントの両側からそれぞれ延び、前記連結配線と接しない端面をそれぞれ有し、前記2つの第1−2セグメントと対向する2つの第2−2セグメントとを含み、
互いに対向する前記第1−1セグメントと前記第2−1セグメントとの間の第1離隔距離は、前記第1−2セグメントと前記第2−2セグメントとの間の第2離隔距離よりも大きく、
前記第1発光セルは、前記第1方向と異なる第2方向において隣接する第3発光セルと前記連結配線によって電気的に直接接続されず、
前記第2離隔距離は、前記第1発光セルと前記第3発光セルとの間の第3離隔距離と互いに同一であり、
前記第1−2セグメントの前記第2−2セグメントと対向する前記端面は、前記第1−1セグメントの前記第2−1セグメントと対向する前記端面よりも第1突出長さだけさらに突出し、
前記第2−2セグメントの前記第1−2セグメントと対向する前記端面は、前記第2−1セグメントの前記第1−1セグメントと対向する前記端面よりも第2突出長さだけさらに突出した、発光素子。
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