JP6322669B2 - 応力調整方法 - Google Patents
応力調整方法 Download PDFInfo
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- JP6322669B2 JP6322669B2 JP2016124478A JP2016124478A JP6322669B2 JP 6322669 B2 JP6322669 B2 JP 6322669B2 JP 2016124478 A JP2016124478 A JP 2016124478A JP 2016124478 A JP2016124478 A JP 2016124478A JP 6322669 B2 JP6322669 B2 JP 6322669B2
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- aluminum oxide
- stress
- water vapor
- oxide film
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- 238000000034 method Methods 0.000 title claims description 14
- 239000007789 gas Substances 0.000 claims description 41
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 35
- 230000015572 biosynthetic process Effects 0.000 claims description 28
- 238000004544 sputter deposition Methods 0.000 claims description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000010408 film Substances 0.000 description 78
- 239000000758 substrate Substances 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
Claims (2)
- 真空チャンバ内に被成膜物と、アルミニウム製または酸化アルミニウム製のターゲットとを配置し、真空雰囲気中の真空チャンバ内に希ガス及び酸素含有の反応ガスまたは希ガスのみを導入し、ターゲットに所定電力を投入してターゲットをスパッタリングすることで被成膜物の表面に酸化アルミニウム膜を成膜するとき、この酸化アルミニウム膜の応力を±500MPa以内に調節するための応力調整方法であって、
真空チャンバ内に水素ガスまたは水蒸気を導入し、スパッタリングによる成膜時、2×10 −3 Pa〜0.1Paの範囲内の分圧で水蒸気を存在させることを特徴とする応力調整方法。 - 真空チャンバ内に、前記ターゲットの少なくとも2枚を設け、対をなすターゲット間に所定周波数の交流電力を投入して各ターゲットをスパッタリングすることを特徴とする請求項1記載の応力調整方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016124478A JP6322669B2 (ja) | 2016-06-23 | 2016-06-23 | 応力調整方法 |
PCT/JP2017/020216 WO2017221650A1 (ja) | 2016-06-23 | 2017-05-31 | 成膜方法 |
KR1020187026465A KR20180115731A (ko) | 2016-06-23 | 2017-05-31 | 응력 조정 방법 |
CN201780038184.2A CN109328243A (zh) | 2016-06-23 | 2017-05-31 | 成膜方法 |
TW106119666A TWI686489B (zh) | 2016-06-23 | 2017-06-13 | 應力調整方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016124478A JP6322669B2 (ja) | 2016-06-23 | 2016-06-23 | 応力調整方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017226887A JP2017226887A (ja) | 2017-12-28 |
JP6322669B2 true JP6322669B2 (ja) | 2018-05-09 |
Family
ID=60784678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016124478A Active JP6322669B2 (ja) | 2016-06-23 | 2016-06-23 | 応力調整方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6322669B2 (ja) |
KR (1) | KR20180115731A (ja) |
CN (1) | CN109328243A (ja) |
TW (1) | TWI686489B (ja) |
WO (1) | WO2017221650A1 (ja) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0364451A (ja) * | 1989-07-31 | 1991-03-19 | Sharp Corp | 絶縁膜の製造方法 |
JPH06248420A (ja) * | 1993-02-25 | 1994-09-06 | Kyocera Corp | 硬質膜被覆部材 |
JPH0770749A (ja) * | 1993-09-03 | 1995-03-14 | Canon Inc | 薄膜形成方法および装置 |
US5911856A (en) * | 1993-09-03 | 1999-06-15 | Canon Kabushiki Kaisha | Method for forming thin film |
JP3391944B2 (ja) * | 1995-07-06 | 2003-03-31 | キヤノン株式会社 | 酸化物薄膜の成膜方法 |
JPH0995773A (ja) * | 1995-10-03 | 1997-04-08 | Kobe Steel Ltd | 真空装置用窓材の製造方法 |
JP2002030432A (ja) * | 2000-07-19 | 2002-01-31 | Hitachi Ltd | スパッタリング装置およびスパッタリング方法 |
WO2004077519A2 (en) * | 2003-02-27 | 2004-09-10 | Mukundan Narasimhan | Dielectric barrier layer films |
JP2005138208A (ja) * | 2003-11-05 | 2005-06-02 | Sumitomo Electric Hardmetal Corp | 表面被覆切削工具とその作製方法 |
CN101048531A (zh) * | 2004-07-07 | 2007-10-03 | 通用电气公司 | 基材上的保护涂层及其制备方法 |
JP2014141698A (ja) * | 2013-01-23 | 2014-08-07 | Dainippon Screen Mfg Co Ltd | 酸化アルミニウムの成膜方法 |
CN104480442A (zh) * | 2014-12-05 | 2015-04-01 | 中国科学院电工研究所 | 一种制备含氢氧化锌铝透明导电薄膜的方法 |
-
2016
- 2016-06-23 JP JP2016124478A patent/JP6322669B2/ja active Active
-
2017
- 2017-05-31 KR KR1020187026465A patent/KR20180115731A/ko not_active Application Discontinuation
- 2017-05-31 WO PCT/JP2017/020216 patent/WO2017221650A1/ja active Application Filing
- 2017-05-31 CN CN201780038184.2A patent/CN109328243A/zh active Pending
- 2017-06-13 TW TW106119666A patent/TWI686489B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20180115731A (ko) | 2018-10-23 |
TW201816150A (zh) | 2018-05-01 |
WO2017221650A1 (ja) | 2017-12-28 |
JP2017226887A (ja) | 2017-12-28 |
CN109328243A (zh) | 2019-02-12 |
TWI686489B (zh) | 2020-03-01 |
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