JP6321096B2 - 太陽電池パネル - Google Patents
太陽電池パネル Download PDFInfo
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- JP6321096B2 JP6321096B2 JP2016154500A JP2016154500A JP6321096B2 JP 6321096 B2 JP6321096 B2 JP 6321096B2 JP 2016154500 A JP2016154500 A JP 2016154500A JP 2016154500 A JP2016154500 A JP 2016154500A JP 6321096 B2 JP6321096 B2 JP 6321096B2
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- 239000000758 substrate Substances 0.000 claims description 77
- 239000004065 semiconductor Substances 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 55
- 229910000679 solder Inorganic materials 0.000 claims description 55
- 239000010410 layer Substances 0.000 claims description 53
- 239000012792 core layer Substances 0.000 claims description 37
- 238000013459 approach Methods 0.000 claims description 4
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- 239000002019 doping agent Substances 0.000 description 12
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- 230000001788 irregular Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008433 SnCU Inorganic materials 0.000 description 1
- 229910007116 SnPb Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
110 前面基板
120 後面基板
130 密封材
142 配線材
145 バスリボン
150 太陽電池
Claims (19)
- 半導体基板及び前記半導体基板に形成される電極をそれぞれ含む複数の太陽電池と、
前記複数の太陽電池を連結する配線材と、
を含み、
前記電極は、前記配線材が付着するパッド部を含むバスバーラインを含み、
前記配線材は、前記パッド部に連結される第1配線部と、前記パッド部以外の部分に位置する第2配線部と、を含み、
前記第1配線部の厚さが前記第2配線部の厚さより厚く、
前記配線材が、コア層と、前記コア層の外面に位置するソルダー層と、を含み、
前記第1配線部の前記ソルダー層の厚さが前記第2配線部の前記ソルダー層の厚さより厚い、太陽電池パネル。 - 前記第2配線部の厚さ:前記第1配線部の厚さの比が1:1.05〜1:1.5である、請求項1に記載の太陽電池パネル。
- 前記パッド部に隣接した前記第1配線部の幅よりも前記第1配線部の厚さが小さい、請求項1に記載の太陽電池パネル。
- 前記パッド部に隣接した前記第1配線部の幅:前記第1配線部の厚さの比が1:0.3〜1:0.6である、請求項3に記載の太陽電池パネル。
- 前記第1配線部において前記コア層と前記パッド部との間に前記ソルダー層が位置しないか、前記コア層と前記パッド部との間に位置する前記ソルダー層の下部部分の厚さが、前記太陽電池から遠く位置する前記ソルダー層の上部部分の厚さより薄い、請求項1に記載の太陽電池パネル。
- 前記第1配線部において前記太陽電池から遠く位置する前記ソルダー層の上部部分の厚さが、前記第2配線部において前記太陽電池から遠く位置する前記ソルダー層の上部部分の厚さより厚い、請求項1に記載の太陽電池パネル。
- 前記コア層の断面が円形又は楕円形の形状を有する、請求項1に記載の太陽電池パネル。
- 前記コア層の幅が250μm〜500μmであり、
前記第1配線部の厚さが265.5μm〜870μmであり、
前記第2配線部の厚さが250μm〜580μmである、請求項1に記載の太陽電池パネル。 - 前記第1配線部は、前記太陽電池に隣接した部分において前記太陽電池に近くなるほど幅が漸進的に大きくなり、
前記第2配線部は、前記太陽電池に隣接した部分において前記太陽電池に近くなるほど幅が漸進的に小さくなる、請求項1に記載の太陽電池パネル。 - 長さ方向と垂直な前記第1配線部の断面において前記太陽電池から遠く位置する部分と前記太陽電池に隣接した部分との間に変曲点が位置する、請求項1に記載の太陽電池パネル。
- 長さ方向と垂直な前記第1配線部の断面において前記太陽電池から遠く位置する部分の外面が外部に向かって凸状の曲面からなる、請求項1に記載の太陽電池パネル。
- 長さ方向と垂直な前記第1配線部の断面において前記太陽電池から遠く位置する部分が半円形又は半楕円形の形状を有する、請求項11に記載の太陽電池パネル。
- 前記太陽電池に隣接した前記第1配線部の幅が、前記太陽電池に隣接した前記第2配線部の幅より大きい、請求項1に記載の太陽電池パネル。
- 前記太陽電池に隣接した前記第1配線部の幅に対する前記太陽電池に隣接した前記第2配線部の幅が36%以下である、請求項13に記載の太陽電池パネル。
- 前記電極は、前記パッド部より小さい幅を有するライン部をさらに含み、
前記第2配線部が前記ライン部上に位置し、
前記配線材が、コア層と、前記コア層の外面に位置するソルダー層と、を含み、
前記コア層の直径が前記ライン部の幅より大きい、請求項1に記載の太陽電池パネル。 - 前記太陽電池に隣接した前記第1配線部の幅は、前記パッド部と同じかそれより小さく、前記ライン部の幅より大きい、請求項15に記載の太陽電池パネル。
- 前記太陽電池に隣接した前記第2配線部の幅が前記ライン部と同じかそれより小さい、請求項15に記載の太陽電池パネル。
- 前記ライン部の幅が490μm未満であり、
前記パッド部の幅が0.5mm〜2mmである、請求項15に記載の太陽電池パネル。 - 前記太陽電池の一面を基準にして前記配線材の個数が6個〜33個である、請求項1に記載の太陽電池パネル。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150111715A KR101739404B1 (ko) | 2015-08-07 | 2015-08-07 | 태양 전지 패널 |
KR10-2015-0111715 | 2015-08-07 |
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JP2018072359A Division JP6804485B2 (ja) | 2015-08-07 | 2018-04-04 | 太陽電池パネル |
Publications (2)
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JP2017038050A JP2017038050A (ja) | 2017-02-16 |
JP6321096B2 true JP6321096B2 (ja) | 2018-05-09 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2016154500A Active JP6321096B2 (ja) | 2015-08-07 | 2016-08-05 | 太陽電池パネル |
JP2018072359A Active JP6804485B2 (ja) | 2015-08-07 | 2018-04-04 | 太陽電池パネル |
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JP2018072359A Active JP6804485B2 (ja) | 2015-08-07 | 2018-04-04 | 太陽電池パネル |
Country Status (5)
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US (2) | US10002984B2 (ja) |
EP (2) | EP3128561B1 (ja) |
JP (2) | JP6321096B2 (ja) |
KR (1) | KR101739404B1 (ja) |
CN (1) | CN106449831B (ja) |
Cited By (1)
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JP7483596B2 (ja) | 2020-12-07 | 2024-05-15 | 文化シヤッター株式会社 | 開閉装置及びこの開閉装置の製造方法 |
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EP3157065B1 (en) * | 2015-10-12 | 2020-12-09 | LG Electronics Inc. | Apparatus and method for attaching interconnector of solar cell panel |
JP6526157B2 (ja) | 2016-11-17 | 2019-06-05 | エルジー エレクトロニクス インコーポレイティド | 太陽電池パネル |
CN107170844A (zh) * | 2017-07-10 | 2017-09-15 | 苏州腾晖光伏技术有限公司 | 一种无主栅的太阳能电池片及光伏组件 |
WO2019143218A1 (ko) * | 2018-01-22 | 2019-07-25 | 엘지전자 주식회사 | 태양 전지 모듈 |
KR102192443B1 (ko) * | 2018-03-22 | 2020-12-17 | 엘지전자 주식회사 | 태양 전지 패널용 배선재 및 이를 포함하는 태양 전지 패널 |
KR102496629B1 (ko) * | 2018-03-22 | 2023-02-06 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 패널 |
CN110311002B (zh) * | 2018-03-22 | 2022-12-23 | 上饶市晶科绿能科技发展有限公司 | 太阳能电池板的互连构件和包括该构件的太阳能电池板 |
TWI703738B (zh) * | 2019-05-14 | 2020-09-01 | 友達光電股份有限公司 | 太陽能電池 |
TW202112054A (zh) * | 2019-06-03 | 2021-03-16 | 美商索拉利亞股份有限公司 | 低指間距疊瓦太陽能電池 |
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