JP6316798B2 - 半導体試料での格子間酸素濃度の決定 - Google Patents
半導体試料での格子間酸素濃度の決定 Download PDFInfo
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- JP6316798B2 JP6316798B2 JP2015503910A JP2015503910A JP6316798B2 JP 6316798 B2 JP6316798 B2 JP 6316798B2 JP 2015503910 A JP2015503910 A JP 2015503910A JP 2015503910 A JP2015503910 A JP 2015503910A JP 6316798 B2 JP6316798 B2 JP 6316798B2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims description 58
- 229910052760 oxygen Inorganic materials 0.000 title claims description 56
- 239000001301 oxygen Substances 0.000 title claims description 56
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims description 39
- 239000002800 charge carrier Substances 0.000 claims description 29
- 238000000137 annealing Methods 0.000 claims description 27
- 239000012535 impurity Substances 0.000 claims description 23
- 239000002019 doping agent Substances 0.000 claims description 18
- 238000005259 measurement Methods 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 230000005355 Hall effect Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 description 44
- 239000010703 silicon Substances 0.000 description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 43
- 239000000523 sample Substances 0.000 description 32
- 239000000758 substrate Substances 0.000 description 29
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000011088 calibration curve Methods 0.000 description 8
- 238000012512 characterization method Methods 0.000 description 7
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 5
- 239000000370 acceptor Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 238000013178 mathematical model Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0095—Semiconductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Food Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Description
− 熱ドナーを形成するために試料を熱処理にさらすステップと、
− 試料を0Kと100Kとの間に含まれる温度の状態にするステップおよび試料の電荷キャリア濃度を測定するステップと、
− 試料の熱ドナー濃度を試料の電荷キャリア濃度および温度から決定するステップと、
− 格子間酸素濃度を熱ドナー濃度から決定するステップとによって満たされる傾向がある。
F0 650℃以上の温度でアニーリングを行うステップ
F0’ ドーパント不純物濃度NA、NDを決定するステップ
F1 熱ドナーを形成するために試料を熱処理にさらすステップ
F2 試料を0Kと100Kとの間に含まれる温度Tの状態にするステップ
F2’ 試料の電荷キャリア濃度pを温度Tで測定するステップ
F3 試料の熱ドナー濃度NTDDを試料の電荷キャリア濃度pおよび温度Tから決定するステップ
F4 試料の酸素濃度COを熱ドナー濃度NTDDおよび熱処理時間tから決定するステップ
F5 650℃以上の温度でアニーリングを行うステップ
NA アクセプタ型のドーパント不純物の濃度
ND ドナー型のドーパント不純物の濃度
NTDD 熱ドナーの濃度
T 温度
TDD 熱ドナー
p 電荷キャリア濃度
t アニーリング時間
Claims (9)
- p型半導体材料から作られる試料の格子間酸素濃度(CO)を熱ドナー濃度(NTDD)から決定するための方法であって、次のステップ、
a)熱ドナーを形成するために所定時間の間、前記試料を熱処理にさらすステップ(F1)を含み、
前記方法が、次のステップ、
b)前記試料を0Kと100Kとの間に含まれる温度(T)の状態にするステップ(F2)および前記試料の電荷キャリア濃度(p)を測定するステップ(F2’)と、
c)前記試料の前記熱ドナー濃度(NTDD)を前記試料の前記電荷キャリア濃度(p)および前記温度(T)から決定するステップ(F3)と、
d)前記熱ドナー濃度(N TDD )、前記所定時間および前記格子間酸素濃度(C O )間の関係から、前記格子間酸素濃度(C O )を決定するステップ(F4)と、を含むことを特徴とする、方法。 - 0Kと100Kとの間に含まれる異なる温度での前記電荷キャリア濃度(p)の複数の測定結果を含み、前記熱ドナー濃度(NTDD)は、前記電荷キャリア濃度対温度の変化を記述する関係式(p(T))との前記測定結果の相関関係によって決定される、請求項1に記載の方法。
- 前記熱処理ステップ(F1)の前に、前記ドーパント不純物の濃度(NA、ND)を前記試料の抵抗率測定結果から決定するステップ(F0’)を含む、請求項3に記載の方法。
- 650℃以上の温度でのアニーリング・ステップ(F0)を最初に含む、請求項1から4のいずれか一項に記載の方法。
- 前記電荷キャリア濃度(p)は、ホール効果によって測定される、請求項1から5のいずれか一項に記載の方法。
- 前記熱処理は、200℃と500℃との間に含まれる温度で行われる、請求項1から6のいずれか一項に記載の方法。
- 前記熱処理の前記温度は、400℃と500℃との間に含まれる、請求項7に記載の方法。
- 前記試料は、前記電荷キャリア濃度(p)を測定する(F2’)ために4Kと20Kとの間に含まれる温度の状態にされる(F2)、請求項1から8のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1201045A FR2989168B1 (fr) | 2012-04-06 | 2012-04-06 | Determination de la concentration en oxygene interstitiel dans un echantillon semi-conducteur |
FR1201045 | 2012-04-06 | ||
PCT/FR2013/000090 WO2013150194A1 (fr) | 2012-04-06 | 2013-04-05 | Determination de la concentration en oxygene interstitiel dans un echantillon semi-conducteur |
Publications (2)
Publication Number | Publication Date |
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JP2015514217A JP2015514217A (ja) | 2015-05-18 |
JP6316798B2 true JP6316798B2 (ja) | 2018-04-25 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015503910A Active JP6316798B2 (ja) | 2012-04-06 | 2013-04-05 | 半導体試料での格子間酸素濃度の決定 |
Country Status (5)
Country | Link |
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US (1) | US9297774B2 (ja) |
EP (1) | EP2834625B1 (ja) |
JP (1) | JP6316798B2 (ja) |
FR (1) | FR2989168B1 (ja) |
WO (1) | WO2013150194A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20150294868A1 (en) * | 2014-04-15 | 2015-10-15 | Infineon Technologies Ag | Method of Manufacturing Semiconductor Devices Containing Chalcogen Atoms |
FR3045074B1 (fr) * | 2015-12-14 | 2018-01-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede pour ajuster la resistivite d'un lingot semi-conducteur lors de sa fabrication |
DE102016120771B3 (de) * | 2016-10-31 | 2018-03-08 | Infineon Technologies Ag | Verfahren zum Herstellen von Halbleitervorrichtungen und Halbleitervorrichtung, die wasserstoff-korrelierte Donatoren enthält |
EP3623801B1 (en) * | 2018-09-14 | 2022-11-02 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Method for determining the thermal donor concentration of a semiconductor sample |
CN114235899B (zh) * | 2021-12-16 | 2023-11-03 | 安徽光智科技有限公司 | 一种超高纯锗单晶载流子浓度的检测方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2460479A1 (fr) * | 1979-06-29 | 1981-01-23 | Ibm France | Procede de caracterisation de la teneur en oxygene des barreaux de silicium tires selon la methode czochralski |
JPS5712356A (en) * | 1980-06-25 | 1982-01-22 | Fujitsu Ltd | Method for measuring content of oxygen in silicon |
JPH04298042A (ja) * | 1991-03-27 | 1992-10-21 | Komatsu Electron Metals Co Ltd | 半導体の熱処理方法 |
JP3446572B2 (ja) * | 1997-11-11 | 2003-09-16 | 信越半導体株式会社 | シリコン単結晶中の酸素析出挙動を割り出す方法、およびシリコン単結晶ウエーハ製造工程の決定方法、並びにプログラムを記録した記録媒体 |
JP3772755B2 (ja) * | 2002-02-13 | 2006-05-10 | 信越半導体株式会社 | 半導体結晶の検査用サンプルの自動処理方法及び自動処理システム並びに半導体結晶の検査方法 |
FR2964459B1 (fr) | 2010-09-02 | 2012-09-28 | Commissariat Energie Atomique | Procede de cartographie de la concentration en oxygene |
FR2974180B1 (fr) * | 2011-04-15 | 2013-04-26 | Commissariat Energie Atomique | Procede de determination de la concentration en oxygene interstitiel. |
-
2012
- 2012-04-06 FR FR1201045A patent/FR2989168B1/fr not_active Expired - Fee Related
-
2013
- 2013-04-05 EP EP13722478.8A patent/EP2834625B1/fr not_active Not-in-force
- 2013-04-05 JP JP2015503910A patent/JP6316798B2/ja active Active
- 2013-04-05 US US14/390,985 patent/US9297774B2/en not_active Expired - Fee Related
- 2013-04-05 WO PCT/FR2013/000090 patent/WO2013150194A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2013150194A1 (fr) | 2013-10-10 |
EP2834625A1 (fr) | 2015-02-11 |
US20150055677A1 (en) | 2015-02-26 |
JP2015514217A (ja) | 2015-05-18 |
US9297774B2 (en) | 2016-03-29 |
FR2989168B1 (fr) | 2014-03-28 |
FR2989168A1 (fr) | 2013-10-11 |
EP2834625B1 (fr) | 2018-10-24 |
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