JP6296166B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6296166B2 JP6296166B2 JP2016555144A JP2016555144A JP6296166B2 JP 6296166 B2 JP6296166 B2 JP 6296166B2 JP 2016555144 A JP2016555144 A JP 2016555144A JP 2016555144 A JP2016555144 A JP 2016555144A JP 6296166 B2 JP6296166 B2 JP 6296166B2
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- 239000004065 semiconductor Substances 0.000 title claims description 77
- 239000000758 substrate Substances 0.000 claims description 13
- 238000010586 diagram Methods 0.000 description 24
- 238000000034 method Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Description
特許文献1 特開2014−130909号公報(米国特許出願公開第2014/184303号明細書)
Claims (6)
- IGBT素子と、
前記IGBT素子と並列に接続された超接合型トランジスタ素子と、
前記IGBT素子のゲート端子に印加するゲート電圧を、前記超接合型トランジスタ素子のゲート端子に印加するゲート電圧よりも制限する制限部と
を備え、
前記制限部は、前記IGBT素子に印加する前記ゲート電圧の範囲を、前記超接合型トランジスタ素子に印加する前記ゲート電圧の範囲よりも狭い範囲にクランプする半導体装置。 - 外部から外部電圧を受け取る外部端子をさらに備え、
前記IGBT素子および前記超接合型トランジスタ素子は、共通の前記外部電圧にそれぞれ基づいた前記ゲート電圧が印加される
請求項1に記載の半導体装置。 - 前記制限部は、前記IGBT素子のゲートエミッタ間に接続されたクランプダイオードを有する
請求項1または2に記載の半導体装置。 - 前記IGBT素子のゲート抵抗が、前記超接合型トランジスタ素子のゲート抵抗より大きく、前記IGBT素子の閾値電圧が、前記超接合型トランジスタ素子の閾値電圧より高い
請求項1から3のいずれか一項に記載の半導体装置。 - 前記超接合型トランジスタ素子のゲート抵抗が、前記IGBT素子のゲート抵抗より大きく、前記超接合型トランジスタ素子の閾値電圧が、前記IGBT素子の閾値電圧より高い
請求項1から3のいずれか一項に記載の半導体装置。 - 前記IGBT素子および前記超接合型トランジスタ素子を、同一の半導体基板に形成した
請求項1から5のいずれか一項に記載の半導体装置。
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JP6480795B2 (ja) * | 2015-04-16 | 2019-03-13 | ルネサスエレクトロニクス株式会社 | 半導体装置およびそれを用いた回路装置 |
US10079599B2 (en) * | 2016-10-14 | 2018-09-18 | Infineon Technologies Ag | Controlling at least two transistors |
US10122294B2 (en) * | 2016-12-01 | 2018-11-06 | Ford Global Technologies, Llc | Active gate clamping for inverter switching devices with enhanced common source inductance |
DE102017105712A1 (de) * | 2017-03-16 | 2018-10-04 | Infineon Technologies Austria Ag | Transistorbauelement |
JP6777244B2 (ja) * | 2017-10-18 | 2020-10-28 | 富士電機株式会社 | 半導体装置 |
EP3710867B1 (en) | 2017-11-19 | 2024-02-14 | Schlumberger Technology B.V. | Noise attenuation of multiple source seismic data |
JP7205091B2 (ja) * | 2018-07-18 | 2023-01-17 | 富士電機株式会社 | 半導体装置 |
CN109830524B (zh) * | 2019-01-21 | 2020-12-11 | 东南大学 | 一种极低反向恢复电荷超结功率vdmos |
US11342410B2 (en) | 2019-09-27 | 2022-05-24 | Alpha And Omega Semiconductor (Cayman) Ltd. | Improving IGBT light load efficiency |
US10931276B1 (en) | 2019-09-27 | 2021-02-23 | Alpha And Omega Semiconductor (Cayman) Ltd. | Combined IGBT and superjunction MOSFET device with tuned switching speed |
CN114097094A (zh) * | 2020-06-12 | 2022-02-25 | 华为数字能源技术有限公司 | 一种超结逆导型绝缘栅双极晶体管及电动汽车电极控制器 |
CN114256330B (zh) * | 2021-12-22 | 2023-05-26 | 电子科技大学 | 一种超结igbt终端结构 |
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JP2002016253A (ja) * | 2000-06-30 | 2002-01-18 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP4166627B2 (ja) * | 2003-05-30 | 2008-10-15 | 株式会社デンソー | 半導体装置 |
JP4815885B2 (ja) * | 2005-06-09 | 2011-11-16 | トヨタ自動車株式会社 | 半導体装置の制御方法 |
US20120235710A1 (en) * | 2011-03-15 | 2012-09-20 | Infineon Technologies Ag | Circuit Arrangement with a MOSFET and an IGBT |
JP5452549B2 (ja) * | 2011-06-03 | 2014-03-26 | 三菱電機株式会社 | パワーモジュール |
JP5805513B2 (ja) * | 2011-12-14 | 2015-11-04 | 三菱電機株式会社 | 電力用半導体装置 |
JP5783997B2 (ja) | 2012-12-28 | 2015-09-24 | 三菱電機株式会社 | 電力用半導体装置 |
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