JP6293061B2 - 可撓性のナノワイヤをベースにした太陽電池 - Google Patents
可撓性のナノワイヤをベースにした太陽電池 Download PDFInfo
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- JP6293061B2 JP6293061B2 JP2014555379A JP2014555379A JP6293061B2 JP 6293061 B2 JP6293061 B2 JP 6293061B2 JP 2014555379 A JP2014555379 A JP 2014555379A JP 2014555379 A JP2014555379 A JP 2014555379A JP 6293061 B2 JP6293061 B2 JP 6293061B2
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- 239000002070 nanowire Substances 0.000 title claims description 55
- 239000004065 semiconductor Substances 0.000 claims description 51
- 229920000642 polymer Polymers 0.000 claims description 26
- 239000002131 composite material Substances 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 230000000737 periodic effect Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Description
12 半導体ナノワイヤの層
14 複合層
16 最上層
18 底部層
20 入射光
22 半導体ナノワイヤ
24 上部
26 方向
28 方向
30 ピッチ
32 第1面
34 第2面
36 第3面
38 方向
40 第1半径
42 第2半径
44 光沢のある面
neff 有効屈折率
Claims (7)
- p/nをドープした半導体ナノワイヤの層と、少なくとも1つのポリマ層とを有する太陽電池であって、前記p/nをドープした半導体ナノワイヤの層が、複合層を形成するよう、前記ポリマ層に部分的に埋め込まれ、前記ポリマ層が、第1面及び第2面を持ち、動作状態において、前記第1面が、前記第2面と比べて、入射位置にある入射光に対してより近く、前記pnをドープした半導体ナノワイヤの上部が、前記ポリマ層の前記第1面から突き出ており、
前記第1面の面積が、前記第2面の面積より大きくなり、前記複合層の有効屈折率が、前記第1面の近くにおいて、空気の屈折率と一致すると共に、前記p/nをドープした半導体ナノワイヤの平均体積密度が、前記第1面の近くと比べて、前記第2面の近くにおいて、より高くなるように、前記複合層が曲げられている太陽電池。 - 前記第1面の少なくとも一部が、少なくとも1つの方向に湾曲している請求項1に記載の太陽電池。
- 前記pnをドープした半導体ナノワイヤの大部分が、前記第1面に対して本質的に垂直である方向に配向される請求項1に記載の太陽電池。
- 前記pnをドープした半導体ナノワイヤの層が、少なくとも1つの方向において周期構造を持つ請求項1乃至3のいずれか一項に記載の太陽電池。
- 前記ポリマ層の前記第1面及び前記第2面が、本質的に平行に整列される請求項1乃至4のいずれか一項に記載の太陽電池。
- 透明導電酸化物から作成される最上層を更に有し、前記最上層が、動作状態において、前記第1面と比べて、前記入射位置にある前記入射光に対してより近い、より上の第3面を持つ請求項1乃至5のいずれか一項に記載の太陽電池。
- 金属によって形成される底部層を更に有し、前記底部層が、前記p/nをドープした半導体ナノワイヤの大部分及び前記ポリマ層の前記第2面と接触する請求項1乃至6のいずれか一項に記載の太陽電池。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261595728P | 2012-02-07 | 2012-02-07 | |
US61/595,728 | 2012-02-07 | ||
PCT/IB2013/050943 WO2013118048A1 (en) | 2012-02-07 | 2013-02-04 | Flexible nanowire based solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015509657A JP2015509657A (ja) | 2015-03-30 |
JP6293061B2 true JP6293061B2 (ja) | 2018-03-14 |
Family
ID=48040377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014555379A Expired - Fee Related JP6293061B2 (ja) | 2012-02-07 | 2013-02-04 | 可撓性のナノワイヤをベースにした太陽電池 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20150007882A1 (ja) |
EP (1) | EP2812924A1 (ja) |
JP (1) | JP6293061B2 (ja) |
CN (1) | CN104094416A (ja) |
BR (1) | BR112014019163A8 (ja) |
WO (1) | WO2013118048A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108400179B (zh) * | 2018-04-27 | 2023-08-25 | 安阳师范学院 | 一种层间组分递变的水平排布层堆叠纳米线薄膜柔性太阳能电池 |
CN108666425B (zh) * | 2018-05-24 | 2019-12-27 | 厦门大学 | 一种柔性可弯曲杂化太阳能电池的制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US6291761B1 (en) * | 1998-12-28 | 2001-09-18 | Canon Kabushiki Kaisha | Solar cell module, production method and installation method therefor and photovoltaic power generation system |
US7335908B2 (en) * | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
WO2004023527A2 (en) * | 2002-09-05 | 2004-03-18 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
US20060207647A1 (en) * | 2005-03-16 | 2006-09-21 | General Electric Company | High efficiency inorganic nanorod-enhanced photovoltaic devices |
CN101292365B (zh) * | 2005-06-17 | 2012-04-04 | 依路米尼克斯公司 | 纳米结构的光伏器件及其制造方法 |
EP2183789A1 (en) * | 2007-08-28 | 2010-05-12 | California Institute of Technology | Method for reuse of wafers for growth of vertically-aligned wire arrays |
JP2010028092A (ja) * | 2008-07-16 | 2010-02-04 | Honda Motor Co Ltd | ナノワイヤ太陽電池及びその製造方法 |
US8476523B2 (en) * | 2008-08-25 | 2013-07-02 | Enpulz, L.L.C. | Solar panel ready tiles |
US8932940B2 (en) * | 2008-10-28 | 2015-01-13 | The Regents Of The University Of California | Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication |
US20120192934A1 (en) * | 2009-06-21 | 2012-08-02 | The Regents Of The University Of California | Nanostructure, Photovoltaic Device, and Method of Fabrication Thereof |
WO2011066570A2 (en) * | 2009-11-30 | 2011-06-03 | California Institute Of Technology | Semiconductor wire array structures, and solar cells and photodetectors based on such structures |
JP2011138804A (ja) * | 2009-12-25 | 2011-07-14 | Honda Motor Co Ltd | ナノワイヤ太陽電池及びその製造方法 |
US20110240099A1 (en) | 2010-03-30 | 2011-10-06 | Ellinger Carolyn R | Photovoltaic nanowire device |
-
2013
- 2013-02-04 WO PCT/IB2013/050943 patent/WO2013118048A1/en active Application Filing
- 2013-02-04 BR BR112014019163A patent/BR112014019163A8/pt not_active Application Discontinuation
- 2013-02-04 EP EP13713233.8A patent/EP2812924A1/en not_active Withdrawn
- 2013-02-04 CN CN201380008396.8A patent/CN104094416A/zh active Pending
- 2013-02-04 JP JP2014555379A patent/JP6293061B2/ja not_active Expired - Fee Related
- 2013-02-04 US US14/376,869 patent/US20150007882A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP2812924A1 (en) | 2014-12-17 |
JP2015509657A (ja) | 2015-03-30 |
BR112014019163A2 (ja) | 2017-06-20 |
BR112014019163A8 (pt) | 2017-07-11 |
CN104094416A (zh) | 2014-10-08 |
WO2013118048A1 (en) | 2013-08-15 |
US20150007882A1 (en) | 2015-01-08 |
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