JP6290283B2 - 高電子移動度トランジスタ半導体デバイスおよびその製造方法 - Google Patents
高電子移動度トランジスタ半導体デバイスおよびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 76
- 238000004519 manufacturing process Methods 0.000 title description 57
- 229910052751 metal Inorganic materials 0.000 claims description 79
- 239000002184 metal Substances 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 37
- 238000005259 measurement Methods 0.000 claims description 11
- 239000003989 dielectric material Substances 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 109
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 39
- 239000004926 polymethyl methacrylate Substances 0.000 description 39
- 229920002120 photoresistant polymer Polymers 0.000 description 36
- 238000000034 method Methods 0.000 description 28
- 229920001577 copolymer Polymers 0.000 description 25
- 238000000609 electron-beam lithography Methods 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 238000009616 inductively coupled plasma Methods 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003466 anti-cipated effect Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000005389 semiconductor device fabrication Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- RFPUFYQYWVPXOJ-UHFFFAOYSA-N C1=CC=NN=C1.C1=CC=C2C(=O)C=CC(=O)C2=C1 Chemical compound C1=CC=NN=C1.C1=CC=C2C(=O)C=CC(=O)C2=C1 RFPUFYQYWVPXOJ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002789 length control Methods 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Description
PMMA層および共重合体層を分離する前に、等方性の反応性イオン・エッチングによりPMMA層の一部において誘電体層を部分的に除去することができる。誘電体層はSiNを含んでもよい。
Claims (5)
- 300GHzから3THzの周波数で動作するサブ・ミリメータ波増幅器のための高電子移動度トランジスタ(HEMT)半導体デバイスであって、
III−V族基板と、
前記基板上に配置された第1ソース電極および第2ソース電極と、
前記基板上に配置されたドレイン電極と、
前記第1ソース電極と前記ドレイン電極の間に配置される第1金属ゲート・フィンガおよび前記ドレイン電極と前記第2ソース電極の間に配置される第2金属ゲート・フィンガであって、該第1および第2金属ゲート・フィンガの各々が約50nm未満で0nmより大きい幅を有する金属T型ゲートを備える、前記第1金属ゲート・フィンガおよび前記第2金属ゲート・フィンガとを備え、
前記金属T型ゲートは、楔様の基部と、該楔様の基部とは反対側にて細状部となるようにテーパ状をなす上端部とを有し、
前記金属T型ゲートは、300GHz〜3THzの周波数で動作するのに十分に低いゲート容量を有し、
前記HEMT半導体デバイスは、カット・オフ周波数が400GHzを超えることを示すRF測定値を有し、
前記金属T型ゲートを含む前記第1および第2金属ゲート・フィンガの各々が、誘電体材料からなる側壁部分を有し、
前記側壁部分は、前記金属T型ゲートと前記III−V族基板との間に連続的に形成された単一層からなる、デバイス。 - 前記基板がIn0.75Ga0.25Asチャネルを有するインジウム・リン基板を含む、請求項1に記載の半導体デバイス。
- 前記金属T型ゲートを含む前記第1および第2金属ゲート・フィンガの各々が、チタン、白金、および金の1つで作製されている、請求項1または2に記載の半導体デバイス。
- 前記金属T型ゲートを含む前記第1および第2金属ゲート・フィンガの各々が、約35nmの幅を有する、請求項1乃至3のいずれか1項に記載の半導体デバイス。
- 約35nmの幅を有する前記金属T型ゲートを含む前記第1および第2金属ゲート・フィンガの各々が、0.083pFのゲート容量を有する、請求項4に記載の半導体デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/598,817 | 2006-11-14 | ||
US11/598,817 US7582518B2 (en) | 2006-11-14 | 2006-11-14 | High electron mobility transistor semiconductor device and fabrication method thereof |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014027802A Division JP6152352B2 (ja) | 2006-11-14 | 2014-02-17 | 高電子移動度トランジスタ半導体デバイスおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2016157960A JP2016157960A (ja) | 2016-09-01 |
JP6290283B2 true JP6290283B2 (ja) | 2018-03-07 |
Family
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Family Applications (3)
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JP2007251161A Active JP5525124B2 (ja) | 2006-11-14 | 2007-09-27 | 高電子移動度トランジスタ半導体デバイスおよびその製造方法 |
JP2014027802A Active JP6152352B2 (ja) | 2006-11-14 | 2014-02-17 | 高電子移動度トランジスタ半導体デバイスおよびその製造方法 |
JP2016067988A Active JP6290283B2 (ja) | 2006-11-14 | 2016-03-30 | 高電子移動度トランジスタ半導体デバイスおよびその製造方法 |
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JP2007251161A Active JP5525124B2 (ja) | 2006-11-14 | 2007-09-27 | 高電子移動度トランジスタ半導体デバイスおよびその製造方法 |
JP2014027802A Active JP6152352B2 (ja) | 2006-11-14 | 2014-02-17 | 高電子移動度トランジスタ半導体デバイスおよびその製造方法 |
Country Status (3)
Country | Link |
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US (2) | US7582518B2 (ja) |
EP (1) | EP1923907A3 (ja) |
JP (3) | JP5525124B2 (ja) |
Families Citing this family (12)
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JP2010539887A (ja) * | 2007-09-19 | 2010-12-16 | クゥアルコム・インコーポレイテッド | 無線電力磁気共振器から生じた電力を最大化すること |
US8044294B2 (en) * | 2007-10-18 | 2011-10-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Thermoelectric materials and devices |
FR2955097B1 (fr) | 2010-01-13 | 2012-04-13 | Centre Nat Rech Scient | Utilisation de nanotubes de silicium comprenant au moins un atome de remplissage libre a titre de nano-oscillateur electromecanique |
US9366697B2 (en) | 2010-05-21 | 2016-06-14 | University Of Virginia Patent Foundation | Micromachined on-wafer probes and related method |
CN101964500B (zh) * | 2010-07-15 | 2012-01-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种单频太赫兹光源 |
TWI455212B (zh) * | 2012-01-11 | 2014-10-01 | Univ Nat Chiao Tung | 形成一t型閘極結構的方法 |
US8809153B2 (en) * | 2012-05-10 | 2014-08-19 | International Business Machines Corporation | Graphene transistors with self-aligned gates |
US9252180B2 (en) * | 2013-02-08 | 2016-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding pad on a back side illuminated image sensor |
US9614026B2 (en) | 2013-03-13 | 2017-04-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High mobility transport layer structures for rhombohedral Si/Ge/SiGe devices |
US9048184B2 (en) * | 2013-03-15 | 2015-06-02 | Northrop Grumman Systems Corporation | Method of forming a gate contact |
US9379327B1 (en) | 2014-12-16 | 2016-06-28 | Carbonics Inc. | Photolithography based fabrication of 3D structures |
CN106711210A (zh) * | 2016-12-01 | 2017-05-24 | 西安电子科技大学 | 介质辅助支撑型纳米栅器件及其制作方法 |
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2006
- 2006-11-14 US US11/598,817 patent/US7582518B2/en active Active
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2007
- 2007-09-18 EP EP07018243A patent/EP1923907A3/en not_active Withdrawn
- 2007-09-27 JP JP2007251161A patent/JP5525124B2/ja active Active
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2009
- 2009-04-29 US US12/432,113 patent/US7709860B2/en active Active
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2014
- 2014-02-17 JP JP2014027802A patent/JP6152352B2/ja active Active
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EP1923907A2 (en) | 2008-05-21 |
US20080111157A1 (en) | 2008-05-15 |
US7709860B2 (en) | 2010-05-04 |
EP1923907A3 (en) | 2009-04-15 |
JP2008124443A (ja) | 2008-05-29 |
JP6152352B2 (ja) | 2017-06-21 |
US7582518B2 (en) | 2009-09-01 |
JP2016157960A (ja) | 2016-09-01 |
JP2014116638A (ja) | 2014-06-26 |
US20090206369A1 (en) | 2009-08-20 |
JP5525124B2 (ja) | 2014-06-18 |
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