JP6284738B2 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

Info

Publication number
JP6284738B2
JP6284738B2 JP2013217872A JP2013217872A JP6284738B2 JP 6284738 B2 JP6284738 B2 JP 6284738B2 JP 2013217872 A JP2013217872 A JP 2013217872A JP 2013217872 A JP2013217872 A JP 2013217872A JP 6284738 B2 JP6284738 B2 JP 6284738B2
Authority
JP
Japan
Prior art keywords
light
blue
semiconductor light
light emitting
emitted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013217872A
Other languages
Japanese (ja)
Other versions
JP2015079924A (en
Inventor
亨 関口
亨 関口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Electronics Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Electronics Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Electronics Co Ltd
Priority to JP2013217872A priority Critical patent/JP6284738B2/en
Publication of JP2015079924A publication Critical patent/JP2015079924A/en
Application granted granted Critical
Publication of JP6284738B2 publication Critical patent/JP6284738B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Circuit Arrangement For Electric Light Sources In General (AREA)
  • Led Device Packages (AREA)

Description

本発明は半導体発光素子と、この半導体発光素子からの出射光によって励起する蛍光体とを組み合わせた半導体発光装置に関する。   The present invention relates to a semiconductor light emitting device that combines a semiconductor light emitting element and a phosphor excited by light emitted from the semiconductor light emitting element.

従来、化合物半導体である発光ダイオード（以下、ＬＥＤと略す）は、長寿命や小型化の特徴を生かして発光装置として幅広く利用されている。また、窒化ガリウム系化合物半導体等による青色を発光するＬＥＤが開発されたことにより、白色光や疑似白色光の発光装置も製品化が進み、ＬＥＤの放熱を工夫した高輝度高出力の発光装置も製品化されている。また、発光の演色性を高めるために、ＬＥＤの出射光によって励起する蛍光体を組み合わせた半導体発光装置が開示されている（たとえば、特許文献１参照）。   Conventionally, light-emitting diodes (hereinafter abbreviated as LEDs), which are compound semiconductors, have been widely used as light-emitting devices by taking advantage of long life and miniaturization. In addition, with the development of LEDs that emit blue light from gallium nitride compound semiconductors, white light and pseudo white light light emitting devices have also been commercialized, and high-luminance and high-power light-emitting devices that devise LED heat dissipation have also been developed. It has been commercialized. Also, a semiconductor light emitting device is disclosed that combines phosphors that are excited by light emitted from an LED in order to enhance color rendering properties of light emission (see, for example, Patent Document 1).

この特許文献１の半導体発光装置は、赤（Ｒ）、緑（Ｇ）、青（Ｂ）の各ＬＥＤ素子を搭載し、それらのＬＥＤ素子からの出射光の波長の谷間を蛍光体による波長変換光で補完する構成である。これによって、黄色領域の発光が抜けている状態を蛍光体によって補完し、白熱電球に類似した波長分布が得られることが提示されている。   The semiconductor light emitting device disclosed in Patent Document 1 includes LED elements of red (R), green (G), and blue (B), and wavelength conversion by phosphors in the valleys of wavelengths of light emitted from the LED elements. It is a configuration supplemented with light. This suggests that the state where light emission in the yellow region is lost is complemented by a phosphor, and a wavelength distribution similar to that of an incandescent bulb can be obtained.

また、青色ＬＥＤ素子と近紫外ＬＥＤ素子の二つのＬＥＤを設け、さらに蛍光体を組み合わせて演色性を高めた半導体発光装置が開示されている（たとえば、特許文献２参照）。この特許文献２の半導体発光装置の蛍光体は、青色ＬＥＤ素子と近紫外ＬＥＤ素子の両方の出射光を赤色系出射光に変調する第１の赤色系蛍光体と、青色ＬＥＤ素子と近紫外ＬＥＤ素子の両方の出射光を緑色系出射光に変調する緑色系蛍光体と、近紫外ＬＥＤ素子のみの出射光を赤色系出射光に変調する第２の赤色系蛍光体を有する構成である。   In addition, a semiconductor light emitting device is disclosed in which two LEDs, a blue LED element and a near ultraviolet LED element, are provided and a phosphor is combined to improve color rendering (see, for example, Patent Document 2). The phosphor of the semiconductor light emitting device of Patent Document 2 includes a first red phosphor that modulates the emitted light of both the blue LED element and the near ultraviolet LED element into red emitted light, the blue LED element, and the near ultraviolet LED. It is a configuration having a green phosphor that modulates both emitted light of the element into green-based emitted light and a second red-based phosphor that modulates emitted light of only the near ultraviolet LED element into red-based emitted light.

この構成により、青色ＬＥＤ素子と近紫外ＬＥＤ素子の両方の出射光によって蛍光体が励起されるので、効率よく強い出射光が得られると共に、第２の赤色系蛍光体によって、明るい暖色系の発光を得られることが提示されている。   With this configuration, since the phosphor is excited by the emitted light from both the blue LED element and the near-ultraviolet LED element, strong emitted light is efficiently obtained, and bright warm-colored light emission is obtained by the second red phosphor. It has been proposed that

特開２００９−１６１５３号公報（第４頁、第１図）JP 2009-16153 A (page 4, FIG. 1) 特開２０１２−９６８４号公報（第６頁、第５図）JP 2012-9684 A (page 6, FIG. 5)

しかしながら、特許文献１の従来技術は、特性図（文献１：図６参照）を見る限り、黄色領域の補完はわずかであり、効果は限定的と想定できる。また、白熱電球色に近い波長分布の発光を目的としているので、演色性に優れた自然光に近い発光を得ることはできない。   However, according to the prior art of Patent Document 1, as long as the characteristic diagram (Reference 1: refer to FIG. 6) is seen, the yellow region is slightly complemented, and it can be assumed that the effect is limited. Moreover, since it aims at light emission having a wavelength distribution close to that of an incandescent light bulb, light emission close to natural light with excellent color rendering properties cannot be obtained.

また、特許文献２の従来技術は、色度調整を行うことを目的としており、特に明るい暖色系発光を得ること主眼としているため、演色性に優れた自然光に近い発光を得ることは難しいという課題がある。   In addition, the prior art of Patent Document 2 is intended to adjust chromaticity, and since it mainly focuses on obtaining bright warm-colored light emission, it is difficult to obtain light emission close to natural light with excellent color rendering. There is.

ここで近年、ＬＥＤによる発光装置は、低電力で高輝度の特性と共に、自然光に近い発光、すなわち、演色性に優れた発光も求められている。特にレストランや衣料品店等での照明は、高演色の照明が求めてられているが、従来の半導体発光装置では、このような要求を満たすことは困難であった。   Here, in recent years, light emitting devices using LEDs have been required to emit light close to natural light, that is, light emission excellent in color rendering, in addition to low power and high luminance characteristics. Especially for lighting in restaurants, clothing stores, etc., high color rendering lighting is required, but it has been difficult for conventional semiconductor light emitting devices to meet such requirements.

本発明の目的は上記課題を解決し、優れた演色性を有し、自然光に近い発光を得ることが可能な半導体発光装置を提供することである。   An object of the present invention is to provide a semiconductor light emitting device that solves the above problems and has excellent color rendering properties and can emit light close to natural light.

上記課題を解決するために、本発明の半導体発光装置は、下記記載の構成を採用する。   In order to solve the above problems, the semiconductor light emitting device of the present invention employs the following configuration.

本発明の半導体発光装置は、基板上に青色系半導体発光素子と近紫外系半導体発光素子とを実装し、前記両半導体発光素子のそれぞれを覆う封止部材を有する半導体発光装置において、前記青色系半導体発光素子を覆う前記封止部材は前記青色系半導体発光素子からの青色光によって励起するＹＡＧ蛍光体を含有し、前記近紫外系半導体発光素子を覆う前記封止部材は、前記近紫外系半導体発光素子からの近紫外光によって励起する青色蛍光体と赤色蛍光体とを含有し、前記青色蛍光体からの出射光は、前記青色系半導体発光素子からの出射光と前記ＹＡＧ蛍光体からの出射光とを合わせた波長分布の谷間を補完し、前記赤色蛍光体からの出射光は、前記ＹＡＧ蛍光体からの出射光よりも長波長側の波長分布領域を補完することを特徴とする。 The semiconductor light-emitting device of the present invention includes a blue-based semiconductor light-emitting element and a near-ultraviolet-based semiconductor light-emitting element mounted on a substrate and a sealing member that covers each of the semiconductor light-emitting elements. The sealing member covering the semiconductor light emitting element contains a YAG phosphor excited by blue light from the blue semiconductor light emitting element, and the sealing member covering the near ultraviolet semiconductor light emitting element is the near ultraviolet semiconductor containing a blue phosphor and a red phosphor excited by near ultraviolet light from the light emitting element, the light emitted from the light blue phosphor or colleagues, from the YAG phosphor and the light emitted from the blue semiconductor light emitting element complement valley wavelength distribution obtained by combining the emitted light, light emitted from the red phosphor is characterized by complementing the wavelength distribution region on the longer wavelength side than the light emitted from the YAG phosphor

また、前記青色系半導体発光素子と前記近紫外系半導体発光素子とを個別に点灯させる駆動回路を有することを特徴とする。
Further, characterized by having a drive circuit for lighting said blue semiconductor light emitting element and the near-ultraviolet-based semiconductor light-emitting element individually.

本発明の半導体発光装置によれば、青色系半導体発光素子とＹＡＧ蛍光体で構成するパッケージに対して、近紫外系半導体発光素子からの近紫外光で励起する青色蛍光体と赤色蛍光体で構成するパッケージを加えることで、出射光の波長分布の谷間や波長成分が不足している領域を適切に補完することができる。これにより、優れた演色性を有し、様々なものの色の見え方が、太陽光のもとで見える見え方と同等な、自然光に近い発光を実現する半導体発光装置を提供できる。   According to the semiconductor light emitting device of the present invention, a package composed of a blue semiconductor light emitting element and a YAG phosphor is composed of a blue phosphor and a red phosphor excited by near ultraviolet light from the near ultraviolet semiconductor light emitting element. By adding the package, the valley of the wavelength distribution of the emitted light and the region where the wavelength component is insufficient can be appropriately supplemented. Accordingly, it is possible to provide a semiconductor light-emitting device that has excellent color rendering properties and that realizes light emission close to natural light in which the appearance of various colors is the same as that seen under sunlight.

本発明の第１の実施形態に係わる半導体発光装置の構成と動作を説明する断面図である。It is sectional drawing explaining the structure and operation | movement of the semiconductor light-emitting device concerning the 1st Embodiment of this invention. 本発明の第１の実施形態に係わる半導体発光装置の外形を説明する斜視図である。It is a perspective view explaining the external shape of the semiconductor light-emitting device concerning the 1st Embodiment of this invention. 本発明の第１の実施形態に係わる半導体発光装置の青色系半導体発光素子のパッケージの波長分布の一例と、近紫外系半導体発光素子のパッケージの波長分布の一例とを示すグラフである。4 is a graph showing an example of a wavelength distribution of a package of a blue semiconductor light emitting element of a semiconductor light emitting device according to the first embodiment of the present invention and an example of a wavelength distribution of a package of a near ultraviolet semiconductor light emitting element. 本発明の第１の実施形態に係わる半導体発光装置の合成された出射光の波長分布の一例を示すグラフである。It is a graph which shows an example of the wavelength distribution of the emitted light synthesize | combined of the semiconductor light-emitting device concerning the 1st Embodiment of this invention. 本発明の第１の実施形態に係わる半導体発光装置の駆動回路を含めた回路構成を説明するブロック図である。1 is a block diagram illustrating a circuit configuration including a drive circuit of a semiconductor light emitting device according to a first embodiment of the present invention. 本発明の第２の実施形態に係わる半導体発光装置の構成と動作を説明する断面図である。It is sectional drawing explaining the structure and operation | movement of the semiconductor light-emitting device concerning the 2nd Embodiment of this invention. 本発明の第２の実施形態に係わる半導体発光装置の外形を説明する斜視図である。It is a perspective view explaining the external shape of the semiconductor light-emitting device concerning the 2nd Embodiment of this invention. 本発明の第３の実施形態に係わる半導体発光装置の構成と動作を説明する断面図である。It is sectional drawing explaining the structure and operation | movement of a semiconductor light-emitting device concerning the 3rd Embodiment of this invention. 本発明の第３の実施形態に係わる半導体発光装置の外形を説明する斜視図である。It is a perspective view explaining the external shape of the semiconductor light-emitting device concerning the 3rd Embodiment of this invention. 本発明の第３の実施形態に係わる半導体発光装置の駆動回路を含めた回路構成を説明するブロック図である。It is a block diagram explaining the circuit structure including the drive circuit of the semiconductor light-emitting device concerning the 3rd Embodiment of this invention. 本発明の第４の実施形態に係わる半導体発光装置の構成と動作を説明する断面図である。It is sectional drawing explaining the structure and operation | movement of a semiconductor light-emitting device concerning the 4th Embodiment of this invention. 本発明の第４の実施形態に係わる半導体発光装置の外形を説明する斜視図である。It is a perspective view explaining the external shape of the semiconductor light-emitting device concerning the 4th Embodiment of this invention.

以下図面に基づいて本発明の半導体発光装置の具体的な実施の形態を詳述する。   Specific embodiments of the semiconductor light emitting device of the present invention will be described below in detail with reference to the drawings.

［各実施形態の特徴］
第１の実施形態の特徴は、青色系半導体発光素子と近紫外系半導体発光素子が別基板に実装された半導体発光装置である。第２の実施形態の特徴は、青色系半導体発光素子と近紫外系半導体発光素子が別基板に実装されると共に、一方の近紫外系半導体発光素子が光吸収体で囲まれていることである。第３の実施形態の特徴は、青色系半導体発光素子と近紫外系半導体発光素子が１枚の基板に実装されると共に、一方の近紫外系半導体発光素子が光吸収体で囲まれていることである。第４の実施形態の特徴は、青色系半導体発光素子と近紫外系半導体発光素子が１枚の基板に実装されると共に、両方の半導体発光素子が光吸収体で囲まれていることである。 [Features of each embodiment]
A feature of the first embodiment is a semiconductor light emitting device in which a blue semiconductor light emitting element and a near ultraviolet semiconductor light emitting element are mounted on different substrates. The feature of the second embodiment is that the blue semiconductor light emitting element and the near ultraviolet semiconductor light emitting element are mounted on different substrates, and one near ultraviolet semiconductor light emitting element is surrounded by a light absorber. . The feature of the third embodiment is that the blue semiconductor light emitting element and the near ultraviolet semiconductor light emitting element are mounted on one substrate, and one of the near ultraviolet semiconductor light emitting elements is surrounded by a light absorber. It is. A feature of the fourth embodiment is that the blue semiconductor light emitting element and the near ultraviolet semiconductor light emitting element are mounted on one substrate, and both the semiconductor light emitting elements are surrounded by a light absorber.

［第１の実施形態の構成説明：図１］
本発明の第１の実施形態の半導体発光装置の構成を図１を用いて説明する。ここで、図１は、図２で示す斜視図の半導体発光装置を切断線Ａ−Ａ′で切断した断面図である。図１において、符号１は本発明の第１の実施形態の半導体発光装置である。半導体発光装置１は、２つの第１パッケージ１０と第２パッケージ２０で構成される。第１と第２パッケージ１０、２０は、個別に絶縁性の基板１１、２１を備えており、第１パッケージ１０は、基板１１上に青色系半導体発光素子１２（以下、青色ＬＥＤ１２と略す）がバンプ方式によって実装されている。また、第２パッケージ２０は、基板２１上に近紫外系半導体発光素子２２（以下、近紫外ＬＥＤ２２と略す）がバンプ方式によって実装されている。なお、ＬＥＤの実装方式は限定されない。 [Description of Configuration of First Embodiment: FIG. 1]
The configuration of the semiconductor light emitting device according to the first embodiment of the present invention will be described with reference to FIG. Here, FIG. 1 is a cross-sectional view of the semiconductor light emitting device of the perspective view shown in FIG. 2 cut along a cutting line AA ′. In FIG. 1, reference numeral 1 denotes a semiconductor light emitting device according to the first embodiment of the present invention. The semiconductor light emitting device 1 includes two first packages 10 and a second package 20. The first and second packages 10 and 20 individually include insulating substrates 11 and 21, and the first package 10 has a blue semiconductor light emitting element 12 (hereinafter abbreviated as a blue LED 12) on the substrate 11. It is mounted by bump method. In the second package 20, a near ultraviolet semiconductor light emitting element 22 (hereinafter abbreviated as a near ultraviolet LED 22) is mounted on a substrate 21 by a bump method. The LED mounting method is not limited.

また、各基板１１、１２上には、白色樹脂で成り、所定の高さを有する封止枠１３、２３がそれぞれ形成されている。この封止枠１３、２３は、それぞれの略中央部に貫通孔１３ａ、２３ａが設けられている。この貫通孔１３ａ、２３ａの内部に青色ＬＥＤ１２と近紫外ＬＥＤ２２がそれぞれ配置され、さらに、青色ＬＥＤ１２と近紫外ＬＥＤ２２をそれぞれ覆い封止する透明樹脂で成る封止部材１４、２４が充填されている。   In addition, sealing frames 13 and 23 made of white resin and having a predetermined height are formed on the substrates 11 and 12, respectively. The sealing frames 13 and 23 are provided with through holes 13a and 23a at substantially central portions thereof. Blue LEDs 12 and near-ultraviolet LEDs 22 are respectively disposed in the through holes 13a and 23a, and sealing members 14 and 24 made of a transparent resin are provided so as to cover and seal the blue LEDs 12 and the near-ultraviolet LEDs 22, respectively.

そして、第１パッケージ１０の封止部材１４は、青色ＬＥＤ１２からの出射光で励起するＹＡＧ蛍光体１５（白丸で示す）を含有し、第２パッケージ２０の封止部材２４は、近紫外ＬＥＤ２２からの出射光で励起する青色蛍光体２５（黒丸で示す）と赤色蛍光体２６（白丸で示す）とを含有している。   The sealing member 14 of the first package 10 contains a YAG phosphor 15 (indicated by white circles) that is excited by light emitted from the blue LED 12, and the sealing member 24 of the second package 20 is from the near-ultraviolet LED 22. The blue phosphor 25 (shown by a black circle) and the red phosphor 26 (shown by a white circle) that are excited by the emitted light.

すなわち、第１パッケージ１０の基板１１に実装された青色ＬＥＤ１２は、封止枠１３によって囲まれており、この青色ＬＥＤ１２はＹＡＧ蛍光体１５を含有する封止部材１４によって覆われている。同様に、第２パッケージ２０の基板２１に実装された近紫外ＬＥＤ２２は、封止枠２３によって囲まれており、この近紫外ＬＥＤ２２は青色蛍光体２５と赤色蛍光体２６とを含有する封止部材２４によって覆われている。   That is, the blue LED 12 mounted on the substrate 11 of the first package 10 is surrounded by the sealing frame 13, and the blue LED 12 is covered by the sealing member 14 containing the YAG phosphor 15. Similarly, the near ultraviolet LED 22 mounted on the substrate 21 of the second package 20 is surrounded by a sealing frame 23, and the near ultraviolet LED 22 includes a blue phosphor 25 and a red phosphor 26. 24.

［第１の実施形態の出射光の説明：図１］
次に、第１の実施形態の半導体発光装置１の動作によって出射される出射光を図１を用いて説明する。なお、図１で示す各蛍光体と各出射光は、説明をわかりやすくするために模式的に示している。図１において、半導体発光装置１の第１パッケージ１０は、前述したように、青色ＬＥＤ１２が実装されており、この青色ＬＥＤ１２に図示しない手段によって駆動電流を供給すると、青色ＬＥＤ１２が動作して青色光Ｂ１が出射される。この青色光Ｂ１の一部は、封止部材１４を通過して外部に出射され、他の一部は封止部材１４に含有されるＹＡＧ蛍光体１５に吸収され、ＹＡＧ蛍光体１５が励起して波長変換された黄色光Ｙが外部に出射される。すなわち、半導体発光装置１の第１パッケージ１０からは、青色光Ｂ１と黄色光Ｙが出射される。 [Description of Emitted Light of First Embodiment: FIG. 1]
Next, the emitted light emitted by the operation of the semiconductor light emitting device 1 of the first embodiment will be described with reference to FIG. Note that each phosphor and each emitted light shown in FIG. 1 are schematically shown for easy understanding. In FIG. 1, the blue LED 12 is mounted on the first package 10 of the semiconductor light emitting device 1 as described above. When a driving current is supplied to the blue LED 12 by means not shown, the blue LED 12 operates and blue light B1 is emitted. Part of this blue light B1 passes through the sealing member 14 and is emitted to the outside, and the other part is absorbed by the YAG phosphor 15 contained in the sealing member 14 and the YAG phosphor 15 is excited. Then, the yellow light Y whose wavelength has been converted is emitted to the outside. That is, blue light B1 and yellow light Y are emitted from the first package 10 of the semiconductor light emitting device 1.

また、半導体発光装置１の第２パッケージ２０は、前述したように、近紫外ＬＥＤ２２が実装されており、この近紫外ＬＥＤ２２に図示しない手段によって駆動電流を供給すると、近紫外ＬＥＤ２２が動作して近紫外光ｎＵＶが出射される。この近紫外光ｎＵＶの一部は、封止部材２４に含有される青色蛍光体２５に吸収され、青色蛍光体２５が励起して波長変換された青色光Ｂ２が外部に出射される。また、近紫外光ｎＵＶの他の一部は、封止部材２４に含有される赤色蛍光体２６に吸収され、赤色蛍光体２６が励起して波長変換された赤色光Ｒが外部に出射される。   Further, as described above, the near ultraviolet LED 22 is mounted on the second package 20 of the semiconductor light emitting device 1, and when a driving current is supplied to the near ultraviolet LED 22 by means not shown, the near ultraviolet LED 22 operates and becomes near. Ultraviolet light nUV is emitted. A part of the near-ultraviolet light nUV is absorbed by the blue phosphor 25 contained in the sealing member 24, and the blue phosphor 25 excited by the blue phosphor 25 is emitted to the outside. Further, the other part of the near-ultraviolet light nUV is absorbed by the red phosphor 26 contained in the sealing member 24, and the red phosphor R excited and excited by the red phosphor 26 is emitted to the outside. .

すなわち、半導体発光装置１の第２パッケージ２０からは、青色光Ｂ２と赤色光Ｒが出射される。これにより、半導体発光装置１からは、青色光Ｂ１、黄色光Ｙ、青色光Ｂ２、赤色光Ｒが合成された出射光２が外部に出射される。   That is, blue light B2 and red light R are emitted from the second package 20 of the semiconductor light emitting device 1. As a result, the semiconductor light emitting device 1 emits outgoing light 2 in which the blue light B1, yellow light Y, blue light B2, and red light R are combined.

［第１の実施形態の外形説明：図２］
次に図２の斜視図を用いて、第１の実施形態の半導体発光装置１の外形の一例を説明する。半導体発光装置１は、前述したように、第１パッケージ１０と第２パッケージ２０で構成され、各基板１１、２１は略正方形であり、この基板１１、２１上に封止部材１３、２３がそれぞれ形成されている。封止部材１３、２３の略中央部には、円形の貫通孔１３ａ、２３ａが形成されており、この貫通孔１３ａ、２３ａの底部の略中央に基板１１、２１に実装された青色ＬＥＤ１２と近紫外ＬＥＤ２２が配置される。 [External form description of first embodiment: FIG. 2]
Next, an example of the outer shape of the semiconductor light emitting device 1 of the first embodiment will be described using the perspective view of FIG. As described above, the semiconductor light emitting device 1 includes the first package 10 and the second package 20, and the substrates 11 and 21 are substantially square, and the sealing members 13 and 23 are respectively formed on the substrates 11 and 21. Is formed. Circular through-holes 13a and 23a are formed at substantially central portions of the sealing members 13 and 23. The blue LEDs 12 mounted on the substrates 11 and 21 are located near the center of the bottom of the through-holes 13a and 23a. An ultraviolet LED 22 is arranged.

貫通孔１３ａ、２３ａの内部は、前述したように、それぞれ所定の蛍光体を含有した封止部材１４、２４が充填され、青色ＬＥＤ１２と近紫外ＬＥＤ２２が封止されている。また、基板１１、２１の下面には、図示しないが、青色ＬＥＤ１２と近紫外ＬＥＤ２２に接続されている一対の電極端子がそれぞれ形成されており、この電極端子を外部の駆動回路に接続することで半導体発光装置１は動作する。半導体発光装置１が動作すると、図示するように、第１パッケージ１０から青色光Ｂ１、黄色光Ｙが出射され、第２パッケージ２０から青色光Ｂ２と赤色光Ｒが出射される。   As described above, the inside of the through holes 13a and 23a is filled with the sealing members 14 and 24 each containing a predetermined phosphor, and the blue LED 12 and the near ultraviolet LED 22 are sealed. In addition, although not shown, a pair of electrode terminals connected to the blue LED 12 and the near ultraviolet LED 22 are formed on the lower surfaces of the substrates 11 and 21, respectively. By connecting these electrode terminals to an external drive circuit, The semiconductor light emitting device 1 operates. When the semiconductor light emitting device 1 operates, blue light B1 and yellow light Y are emitted from the first package 10 and blue light B2 and red light R are emitted from the second package 20 as shown in the figure.

［第１の実施形態の出射光の波長分布の説明：図３、図４］
次に、第１の実施形態の半導体発光装置１の出射光の波長分布の一例を図３と図４のグラフを用いて説明する。なお、図３、図４の横軸は出射光の波長であり単位はｎｍである。また、縦軸は輝度であり相対値として示している。ここで、図３（ａ）は、半導体発光装置１の第１パッケージ１０から出射される波長分布の一例を示している。図３（ａ）において、第１パッケージ１０からの出射光は、前述したように、青色ＬＥＤ１２からの青色光Ｂ１と、ＹＡＧ蛍光体１５によって波長変換された黄色光Ｙとが合成された光となる。 [Description of wavelength distribution of emitted light of first embodiment: FIGS. 3 and 4]
Next, an example of the wavelength distribution of the emitted light of the semiconductor light emitting device 1 of the first embodiment will be described using the graphs of FIGS. 3 and 4, the horizontal axis represents the wavelength of the emitted light, and the unit is nm. Further, the vertical axis represents luminance and is shown as a relative value. Here, FIG. 3A shows an example of a wavelength distribution emitted from the first package 10 of the semiconductor light emitting device 1. In FIG. 3A, the light emitted from the first package 10 is a combination of the blue light B1 from the blue LED 12 and the yellow light Y wavelength-converted by the YAG phosphor 15 as described above. Become.

ここで、青色光Ｂ１の波長は４５０ｎｍ付近であって、青色ＬＥＤ１２からの出射光であるので波長分布が狭い。また、黄色光Ｙの波長は、ＹＡＧ蛍光体１５による変換光であるので比較的広い分布特性を有している。このような青色ＬＥＤ１２の青色光Ｂ１とＹＡＧ蛍光体１５による黄色光Ｙとの合成光は、一般に疑似白色光を容易に得られる手段として多くの用途に用いられているが、図３（ａ）で明らかなように、青色光Ｂ１と黄色光Ｙの間には、大きな谷間、すなわち、波長成分の少ない領域が存在し、また、黄色光Ｙより長波長の領域では、急激に波長成分が減少していることが理解できる。 Here, the wavelength of the blue light B1 is around 450 nm, and is a light emitted from the blue LED 12, so the wavelength distribution is narrow. Further, since the wavelength of the yellow light Y is converted light by the YAG phosphor 15, it has a relatively wide distribution characteristic. The combined light of the blue light B1 of the blue LED 12 and the yellow light Y by the YAG phosphor 15 is generally used in many applications as means for easily obtaining pseudo white light. As can be seen from the above, there is a large valley between the blue light B1 and the yellow light Y, that is, a region with less wavelength component, and the wavelength component decreases sharply in the region of longer wavelength than the yellow light Y. I can understand that

次に、図３（ｂ）は、半導体発光装置１の第２パッケージ２０から出射される波長分布の一例を示している。図３（ｂ）において、第２パッケージ２０からの出射光は、前述したように、近紫外ＬＥＤ２２からの近紫外光ｎＵＶと、青色蛍光体２５によって波長変換された青色光Ｂ２と、赤色蛍光体２６によって波長変換された赤色光Ｒとが、合成された光となる。   Next, FIG. 3B shows an example of a wavelength distribution emitted from the second package 20 of the semiconductor light emitting device 1. In FIG. 3B, the light emitted from the second package 20 includes the near-ultraviolet light nUV from the near-ultraviolet LED 22, the blue light B2 wavelength-converted by the blue phosphor 25, and the red phosphor as described above. The red light R that has been wavelength-converted by the light 26 is combined light.

ここで、青色蛍光体２５による青色光Ｂ２の波長は、青色ＬＥＤ１２の青色光Ｂ１（図３（ａ）参照）より長波長側にピークがあり、且つ、青色光Ｂ１より波長分布が広い特性を有している。また、赤色光Ｒも赤色蛍光体２６による変換光であるので波長分布が広い特性を有している。なお、４００ｎｍ付近の波長のピークは、近紫外ＬＥＤ２２からの近紫外光ｎＵＶであり、この近紫外光ｎＵＶが励起光となって、それぞれの蛍光体を励起するのである。   Here, the wavelength of the blue light B2 by the blue phosphor 25 has a characteristic that the peak is longer than the blue light B1 (see FIG. 3A) of the blue LED 12, and the wavelength distribution is wider than that of the blue light B1. Have. Further, since the red light R is also converted light by the red phosphor 26, it has a wide wavelength distribution characteristic. The peak of the wavelength near 400 nm is near-ultraviolet light nUV from the near-ultraviolet LED 22, and this near-ultraviolet light nUV becomes excitation light to excite each phosphor.

次に、図４は、半導体発光装置１の第１パッケージ１０と第２パッケージ２０との合成された出射光２の波長分布の一例を示している。図４において、合成された出射光２は、前述したように、第１パッケージ１０からの青色光Ｂ１と黄色光Ｙ、第２パッケージ２０からの青色光Ｂ２と赤色光Ｒが合成された光となる。   Next, FIG. 4 shows an example of the wavelength distribution of the emitted light 2 synthesized by the first package 10 and the second package 20 of the semiconductor light emitting device 1. In FIG. 4, as described above, the synthesized outgoing light 2 includes the blue light B1 and yellow light Y from the first package 10, and the light obtained by synthesizing the blue light B2 and red light R from the second package 20. Become.

ここで、波長４５０ｎｍ付近は、青色光Ｂ１とＢ２が合成されて、波長分布の広い青色光Ｂが出射される。また、波長５６０ｎｍ付近では、波長分布の広い黄色光Ｙが出射される。また、波長６５０ｎｍ付近では、波長分布の広い赤色光Ｒが出射される。このように、半導体発光装置１は、青色ＬＥＤ１２からの青色光Ｂ１とＹＡＧ蛍光体１５による黄色光Ｙの波長の谷間を、近紫外ＬＥＤ２２からの近紫外光ｎＵＶで励起される青色蛍光体２５による青色光Ｂ２によって埋めることができる。また、黄色光Ｙより長波長側の領域は、近紫外ＬＥＤ２２からの近紫外光ｎＵＶで励起される赤色蛍光体２６による赤色光Ｒによって補うことができる。   Here, in the vicinity of the wavelength of 450 nm, the blue light B1 and B2 are combined, and the blue light B having a wide wavelength distribution is emitted. Further, near the wavelength of 560 nm, yellow light Y having a wide wavelength distribution is emitted. Further, near the wavelength of 650 nm, red light R having a wide wavelength distribution is emitted. As described above, the semiconductor light emitting device 1 uses the blue phosphor 25 excited by the near ultraviolet light nUV from the near ultraviolet LED 22 in the valley of the wavelength of the yellow light Y by the blue light B1 from the blue LED 12 and the YAG phosphor 15. It can be filled with blue light B2. Further, the region on the longer wavelength side from the yellow light Y can be supplemented by the red light R by the red phosphor 26 excited by the near ultraviolet light nUV from the near ultraviolet LED 22.

この結果、第１の実施形態の半導体発光装置１から出射される合成された出射光２は、第１パッケージ１０からの疑似白色光（すなわち、Ｂ１＋Ｙ）の波長分布を補完して、図示するように幅広い波長分布を有し、演色性に優れた自然光に近い高輝度な発光を得ることが出来る。このように本発明の半導体発光装置は、青色ＬＥＤ１２とＹＡＧ蛍光体１５による疑似白色光を、近紫外ＬＥＤ２２からの近紫外光ｎＵＶで励起される青色蛍光体２５と赤色蛍光体２６で補完することが大きな特徴である。   As a result, the synthesized outgoing light 2 emitted from the semiconductor light emitting device 1 of the first embodiment complements the wavelength distribution of the pseudo white light (ie, B1 + Y) from the first package 10 and is illustrated in the figure. In addition, it has a wide wavelength distribution and can emit light with high brightness close to natural light with excellent color rendering. As described above, in the semiconductor light emitting device of the present invention, the pseudo white light generated by the blue LED 12 and the YAG phosphor 15 is complemented by the blue phosphor 25 and the red phosphor 26 excited by the near ultraviolet light nUV from the near ultraviolet LED 22. Is a big feature.

［第１の実施形態の駆動回路を含めた回路構成の説明：図５］
次に、第１の実施形態の半導体発光装置の駆動回路を含めた回路構成の一例を図５を用いて説明する。図５において、半導体発光装置１は、前述したように、第１パッケージ１０と第２パッケージ２０で構成され、第１パッケージ１０の基板１１には青色ＬＥＤ１２が実装されており、第２パッケージ２０の基板２１には近紫外ＬＥＤ２２が実装されている。 [Description of Circuit Configuration Including the Driving Circuit of the First Embodiment: FIG. 5]
Next, an example of a circuit configuration including the drive circuit of the semiconductor light emitting device of the first embodiment will be described with reference to FIG. In FIG. 5, as described above, the semiconductor light emitting device 1 includes the first package 10 and the second package 20, and the blue LED 12 is mounted on the substrate 11 of the first package 10. A near ultraviolet LED 22 is mounted on the substrate 21.

青色ＬＥＤ１２のアノード端子は電極端子１７ａに接続し、カソード端子は電極端子１７ｂに接続している。なお、電極端子１７ａ、１７ｂは、基板１１に形成されている。また、近紫外ＬＥＤ２２のアノード端子は電極端子２７ａに接続し、カソード端子は電極端子２７ｂに接続している。なお、電極端子２７ａ、２７ｂは、基板２１に形成されている。   The blue LED 12 has an anode terminal connected to the electrode terminal 17a and a cathode terminal connected to the electrode terminal 17b. The electrode terminals 17a and 17b are formed on the substrate 11. Further, the anode terminal of the near-ultraviolet LED 22 is connected to the electrode terminal 27a, and the cathode terminal is connected to the electrode terminal 27b. The electrode terminals 27a and 27b are formed on the substrate 21.

また、符号３は、半導体発光装置１の第１パッケージ１０と第２パッケージ２０をそれぞれ駆動する駆動回路である。駆動回路３は、２組の出力端子ＯＵＴ１、ＯＵＴ２を有しており、出力端子ＯＵＴ１は、第１パッケージ１０の電極端子１７ａ、１７ｂに接続されて、所定の駆動電流を青色ＬＥＤ１２に供給する。また、出力端子ＯＵＴ２は、第２パッケージ２０の電極端子２７ａ、２７ｂに接続されて、所定の駆動電流を近紫外ＬＥＤ２２に供給する。   Reference numeral 3 denotes a drive circuit that drives the first package 10 and the second package 20 of the semiconductor light emitting device 1. The drive circuit 3 has two sets of output terminals OUT1 and OUT2. The output terminal OUT1 is connected to the electrode terminals 17a and 17b of the first package 10 and supplies a predetermined drive current to the blue LED 12. The output terminal OUT2 is connected to the electrode terminals 27a and 27b of the second package 20, and supplies a predetermined drive current to the near-ultraviolet LED 22.

また、駆動回路３は、２つの操作スイッチＳＷ１、ＳＷ２を備えており、操作スイッチＳＷ１をＯＮすることで、出力端子ＯＵＴ１から所定の駆動電流が出力するように構成され、また、操作スイッチＳＷ２をＯＮすることで、出力端子ＯＵＴ２から所定の駆動電流が出力するように構成される。この構成によって、駆動回路３は操作スイッチＳＷ１、ＳＷ２により、半導体発光装置１の第１パッケージ１０と第２パッケージ２０の点灯と非点灯を独立して個別に制御することができる。   The drive circuit 3 includes two operation switches SW1 and SW2, and is configured to output a predetermined drive current from the output terminal OUT1 when the operation switch SW1 is turned on. By being turned on, a predetermined drive current is output from the output terminal OUT2. With this configuration, the drive circuit 3 can individually control lighting and non-lighting of the first package 10 and the second package 20 of the semiconductor light emitting device 1 by the operation switches SW1 and SW2.

これにより、用途に応じて第１パッケージ１０の青色ＬＥＤ１２と第２パッケージ２０の近紫外ＬＥＤ２２の点灯と非点灯を個別に制御して、出射光２の波長分布を変化させ、出射光２の色味や輝度を変えることができる。たとえば、駆動回路３の操作スイッチＳＷ１、ＳＷ２の両方をＯＮすることで、青色ＬＥＤ１２と近紫外ＬＥＤ２２の両方が点灯し、明るい自然光に近い発光（図４参照）を得ることができる。   Accordingly, the blue LED 12 of the first package 10 and the near-ultraviolet LED 22 of the second package 20 are individually controlled to be turned on and off according to the use, and the wavelength distribution of the emitted light 2 is changed, and the color of the emitted light 2 is changed. The taste and brightness can be changed. For example, when both the operation switches SW1 and SW2 of the drive circuit 3 are turned on, both the blue LED 12 and the near ultraviolet LED 22 are lit, and light emission close to bright natural light (see FIG. 4) can be obtained.

また、駆動回路３の操作スイッチＳＷ１のみをＯＮすることで、青色ＬＥＤ１２のみが点灯し、青みが強調された疑似白色光（図３（ａ）参照）を発光することができる。なお、人の操作が必要な操作スイッチＳＷ１、ＳＷ２の代わりに、外部から制御信号を入力し、駆動電流のＯＮ、ＯＦＦ制御を行ってもよい。   Further, by turning on only the operation switch SW1 of the drive circuit 3, only the blue LED 12 is turned on, and pseudo white light (see FIG. 3A) in which blueness is emphasized can be emitted. Instead of the operation switches SW1 and SW2 that require human operation, a control signal may be input from the outside to perform ON / OFF control of the drive current.

以上のように、本発明の第1の実施形態は、青色ＬＥＤ１２とＹＡＧ蛍光体１５とを組み合わせた第1パッケージ１０と、近紫外ＬＥＤ２２と青色蛍光体２５と赤色蛍光体２６とを組み合わせた第2パッケージ２０とを設けることによって、第1パッケージ１０からの出射光である疑似白色光を補完して、優れた演色性を有し、自然光に近い発光を実現する半導体発光装置を提供することができる。   As described above, in the first embodiment of the present invention, the first package 10 in which the blue LED 12 and the YAG phosphor 15 are combined, the near ultraviolet LED 22, the blue phosphor 25, and the red phosphor 26 are combined. By providing the two packages 20, a semiconductor light emitting device that complements the pseudo white light that is the light emitted from the first package 10, has excellent color rendering properties, and realizes light emission close to natural light is provided. it can.

また、第１の実施形態においては、第１パッケージ１０と第２パッケージ２０が別基板によって構成されて分離しているので、第１パッケージ１０と第２パッケージ２０の機械的な距離を任意に設定できる利点がある。たとえば、半導体発光装置１を搭載するスペースが比較的広ければ、第１パッケージ１０と第２パッケージ２０の距離をある程度離して配置し、各パッケージからの発熱を効率良く放熱することができる。また、半導体発光装置１を搭載するスペースが狭い場合は、第１パッケージ１０と第２パッケージ２０の距離を狭めて、スペース効率のよい搭載が可能となる。   In the first embodiment, since the first package 10 and the second package 20 are configured by separate substrates and separated, the mechanical distance between the first package 10 and the second package 20 is arbitrarily set. There are advantages you can do. For example, if the space for mounting the semiconductor light emitting device 1 is relatively large, the first package 10 and the second package 20 can be arranged at a certain distance to dissipate heat generated from each package efficiently. In addition, when the space for mounting the semiconductor light emitting device 1 is narrow, the distance between the first package 10 and the second package 20 can be reduced to enable space efficient mounting.

また、第１パッケージ１０と第２パッケージ２０が別基板によって構成されることで、駆動回路３からの配線に自由度があり、用途に応じて配線の引き回しを任意に設計できる柔軟性に優れた半導体発光装置を実現できる。また、第１パッケージ１０と第２パッケージ２０が別基板で分離しているので、第１パッケージ１０と第２パッケージ２０の組み合わせ数も自由に構成できる。たとえば、第１パッケージ１０を２個に対して第２パッケージ２０を１個とする組み合わせ、また逆に、第１パッケージ１０を１個に対して第２パッケージ２０を２個とする組み合わせでもよい。このように、第１パッケージ１０と第２パッケージ２０の組み合わせ数を変えることで、合成される出射光２の色味や輝度を任意に調整することが可能となる。   Further, since the first package 10 and the second package 20 are configured by different substrates, there is a degree of freedom in wiring from the drive circuit 3 and excellent flexibility in designing the wiring routing according to the application. A semiconductor light emitting device can be realized. In addition, since the first package 10 and the second package 20 are separated by different substrates, the number of combinations of the first package 10 and the second package 20 can be freely configured. For example, a combination of two first packages 10 and one second package 20 may be used. Conversely, a combination of one first package 10 and two second packages 20 may be used. In this way, by changing the number of combinations of the first package 10 and the second package 20, it is possible to arbitrarily adjust the color and brightness of the emitted light 2 to be synthesized.

［第２の実施形態の構成説明：図６、図７］
次に、本発明の第２の実施形態の半導体発光装置の構成を図６と図７を用いて説明する。ここで、図６は第１の実施形態と同様な断面図であり、図７はその斜視図である。図６と図７において、符号３０は本発明の第２の実施形態の半導体発光装置である。半導体発光装置３０の基本構造は、前述した第１の実施形態の半導体発光装置１と同様であるので、同一要素には同一番号を付し、重複する説明は一部省略する。 [Description of Configuration of Second Embodiment: FIGS. 6 and 7]
Next, the configuration of the semiconductor light emitting device according to the second embodiment of the present invention will be described with reference to FIGS. Here, FIG. 6 is a cross-sectional view similar to that of the first embodiment, and FIG. 7 is a perspective view thereof. 6 and 7, reference numeral 30 denotes a semiconductor light emitting device according to the second embodiment of the present invention. Since the basic structure of the semiconductor light-emitting device 30 is the same as that of the semiconductor light-emitting device 1 of the first embodiment described above, the same elements are denoted by the same reference numerals, and a duplicate description is partially omitted.

半導体発光装置３０は、第１の実施形態の半導体発光装置１と同様に、２つの第１パッケージ３１と第２パッケージ３２で構成される。第１と第２パッケージ３１、３２は、個別に絶縁性の基板１１、２１を備えており、第１パッケージ３１は、基板１１上に青色ＬＥＤ１２がバンプ方式によって実装され、第２パッケージ３２は、基板２１上に近紫外ＬＥＤ２２がバンプ方式によって実装されている。   Similar to the semiconductor light emitting device 1 of the first embodiment, the semiconductor light emitting device 30 includes two first packages 31 and a second package 32. The first and second packages 31 and 32 individually include insulating substrates 11 and 21, and the first package 31 has the blue LED 12 mounted on the substrate 11 by a bump method, and the second package 32 has A near-ultraviolet LED 22 is mounted on the substrate 21 by a bump method.

また、各基板１１、１２上には、白色樹脂で成る封止枠１３、２３が形成されている。この封止枠１３、２３は、略中央部に貫通孔１３ａ、２３ａを有し、この貫通孔１３ａ、２３ａの内部に青色ＬＥＤ１２と近紫外ＬＥＤ２２がそれぞれ配置され、この両ＬＥＤを封止する封止部材１４、２４が充填されている。そして、第１パッケージ３１の封止部材１４は、青色ＬＥＤ１２からの出射光で励起するＹＡＧ蛍光体１５を含有し、第２パッケージ３２の封止部材２４は、近紫外ＬＥＤ２２からの出射光で励起する青色蛍光体２５と赤色蛍光体２６を含有している。   Further, sealing frames 13 and 23 made of white resin are formed on the substrates 11 and 12. The sealing frames 13 and 23 have through-holes 13a and 23a at substantially central portions, and the blue LED 12 and the near-ultraviolet LED 22 are disposed inside the through-holes 13a and 23a, respectively. Stop members 14 and 24 are filled. The sealing member 14 of the first package 31 contains the YAG phosphor 15 that is excited by the emitted light from the blue LED 12, and the sealing member 24 of the second package 32 is excited by the emitted light from the near ultraviolet LED 22. The blue phosphor 25 and the red phosphor 26 are contained.

また、第２パッケージ３２側の封止枠２３の内部には、カーボン材等で成る光吸収体３３が円柱状に形成されている。この光吸収体３３は、図７の破線で示すように、近紫外ＬＥＤ２２の周囲全体を囲み、その高さは図６に示すように封止枠２３の高さより低くなるように形成されている。従って、光吸収体３３は、実際には半導体発光装置３０の外側から見ることはできない。この光吸収体３３が封止枠２３の内部に形成され、近紫外ＬＥＤ２２の周囲を囲うように配置されていることが第２の実施形態の特徴である。   A light absorber 33 made of a carbon material or the like is formed in a cylindrical shape inside the sealing frame 23 on the second package 32 side. The light absorber 33 surrounds the entire periphery of the near-ultraviolet LED 22 as shown by a broken line in FIG. 7, and the height thereof is formed to be lower than the height of the sealing frame 23 as shown in FIG. . Therefore, the light absorber 33 cannot actually be seen from the outside of the semiconductor light emitting device 30. A feature of the second embodiment is that the light absorber 33 is formed inside the sealing frame 23 and is disposed so as to surround the periphery of the near-ultraviolet LED 22.

［第２の実施形態の出射光の説明：図６］
次に、第２の実施形態の半導体発光装置３０の動作によって出射される出射光を図６を用いて説明する。図６において、半導体発光装置３０の第１パッケージ３１は、前述したように、青色ＬＥＤ１２が実装されており、この青色ＬＥＤ１２が動作することで青色光Ｂ１が出射される。そして、第１の実施形態と同様に、青色光Ｂ１の一部は封止部材１４を通過して外部に出射され、他の一部は封止部材１４に含有されるＹＡＧ蛍光体１５に吸収されて、黄色光Ｙが外部に出射される。 [Description of Emitted Light of Second Embodiment: FIG. 6]
Next, the emitted light emitted by the operation of the semiconductor light emitting device 30 of the second embodiment will be described with reference to FIG. In FIG. 6, the blue LED 12 is mounted on the first package 31 of the semiconductor light emitting device 30 as described above, and the blue light B1 is emitted when the blue LED 12 operates. As in the first embodiment, part of the blue light B1 passes through the sealing member 14 and is emitted to the outside, and the other part is absorbed by the YAG phosphor 15 contained in the sealing member 14. Thus, yellow light Y is emitted to the outside.

また、半導体発光装置３０の第２パッケージ３２は、前述したように、近紫外ＬＥＤ２２が実装されており、この近紫外ＬＥＤ２２が動作することで近紫外光ｎＵＶが出射される。そして、第１の実施形態と同様に、近紫外光ｎＵＶの一部は、封止部材２４に含有される青色蛍光体２５に吸収されて、青色光Ｂ２が外部に出射され、また、近紫外光ｎＵＶの他の一部は、赤色蛍光体２６に吸収されて、赤色光Ｒが外部に出射される。   Further, as described above, the near-ultraviolet LED 22 is mounted on the second package 32 of the semiconductor light emitting device 30, and near-ultraviolet light nUV is emitted when the near-ultraviolet LED 22 operates. As in the first embodiment, a part of the near-ultraviolet light nUV is absorbed by the blue phosphor 25 contained in the sealing member 24, and the blue light B2 is emitted to the outside. Another part of the light nUV is absorbed by the red phosphor 26 and the red light R is emitted to the outside.

これにより、半導体発光装置３０からは、青色光Ｂ１、黄色光Ｙ、青色光Ｂ２、赤色光Ｒが合成された出射光２が外部に出射される。ここで、第２パッケージ３２の近紫外ＬＥＤ２２からの近紫外光ｎＵＶは広範囲に出射され、図面上の上部だけでなく、図示するように側面方向（すなわち、封止枠２３の側面に当たる方向）にも出射される。この近紫外光ｎＵＶが側面方向に出射されると、近紫外光ｎＵＶは封止枠２３から漏れて（破線の矢印で示す）、第２パッケージ３２に隣接する第１パッケージ３１に到達し、第１パッケージ３１の封止部材１４に含有するＹＡＧ蛍光体１５に照射されることになる。   As a result, the semiconductor light emitting device 30 emits outgoing light 2 in which the blue light B1, the yellow light Y, the blue light B2, and the red light R are combined to the outside. Here, the near-ultraviolet light nUV from the near-ultraviolet LED 22 of the second package 32 is emitted in a wide range, and not only in the upper part of the drawing but also in the side surface direction (that is, the direction hitting the side surface of the sealing frame 23). Is also emitted. When the near-ultraviolet light nUV is emitted in the lateral direction, the near-ultraviolet light nUV leaks from the sealing frame 23 (indicated by a dashed arrow), reaches the first package 31 adjacent to the second package 32, and The YAG phosphor 15 contained in the sealing member 14 of one package 31 is irradiated.

ここで、ＹＡＧ蛍光体１５は、青色ＬＥＤ１２の青色光Ｂ１に対して強く励起する蛍光体であるが、近紫外光ｎＵＶに対しても弱くはあるが励起する。この結果、第１パッケージ３１が点灯せず、第２パッケージ３２のみが点灯する点灯モードの場合も、ＹＡＧ蛍光体１５は漏れてきた近紫外光ｎＵＶによって励起され、ＹＡＧ蛍光体１５から波長変換された黄色光Ｙ（破線の矢印で示す）が出射されるので、出射光２の波長分布が変化し、色味の異なる発光となって問題が生じる。   Here, the YAG phosphor 15 is a phosphor that strongly excites the blue light B1 of the blue LED 12, but excites the near-ultraviolet light nUV although it is weak. As a result, even in the lighting mode in which only the second package 32 is lit without the first package 31 being lit, the YAG phosphor 15 is excited by the leaked near ultraviolet light nUV and wavelength-converted from the YAG phosphor 15. Since the yellow light Y (indicated by the broken-line arrow) is emitted, the wavelength distribution of the emitted light 2 changes, causing light emission with a different color and causing a problem.

しかし、本実施形態の半導体発光装置３０は、前述したように、近紫外ＬＥＤ２２を囲んで封止枠２３の内部に光吸収体３３が形成されているので、側面方向に出射される近紫外光ｎＵＶは、光吸収体３３によって遮断され、封止枠２３から外に漏れず、隣接する第１パッケージ３１には近紫外光ｎＵＶが到達しない。これにより、第１パッケージ３１が点灯せず、第２パッケージ３２のみが点灯する点灯モードの場合でも、第２パッケージ３２から漏れてきた近紫外光ｎＵＶによって、第１パッケージ３１のＹＡＧ蛍光体１５が励起することはほとんど無く、出射光２の波長分布が変化することを防止できる。   However, in the semiconductor light emitting device 30 of this embodiment, as described above, since the light absorber 33 is formed inside the sealing frame 23 so as to surround the near ultraviolet LED 22, the near ultraviolet light emitted in the side surface direction. The nUV is blocked by the light absorber 33, does not leak out from the sealing frame 23, and the near ultraviolet light nUV does not reach the adjacent first package 31. Thereby, even in the lighting mode in which only the second package 32 is lit without the first package 31 being lit, the YAG phosphor 15 of the first package 31 is caused by the near-ultraviolet light nUV leaking from the second package 32. There is almost no excitation, and the wavelength distribution of the emitted light 2 can be prevented from changing.

また、第１パッケージ３１に含有されるＹＡＧ蛍光体１５に、第２パッケージ３２からの近紫外光ｎＵＶが常に照射されていると、ＹＡＧ蛍光体１５の劣化が早く生じる不具合もある。しかし、光吸収体３３が近紫外光ｎＵＶを遮断することで、ＹＡＧ蛍光体１５の近紫外光ｎＵＶによる劣化を防止して、輝度や色味の経時変化が少ない長寿命の半導体発光装置を実現できる。   Further, when the YAG phosphor 15 contained in the first package 31 is always irradiated with the near-ultraviolet light nUV from the second package 32, the YAG phosphor 15 is quickly deteriorated. However, the light absorber 33 blocks near-ultraviolet light nUV, thereby preventing deterioration of the YAG phosphor 15 by near-ultraviolet light nUV and realizing a long-life semiconductor light-emitting device with little change in luminance and color over time. it can.

また、第２パッケージ３２の光吸収体３３は、第１パッケージ３１の青色ＬＥＤ１２からの青色光Ｂ１の側面方向の光もある程度遮断できるので、第２パッケージ３２の非点灯時の出射光２の色味の変化の防止や、第２パッケージ３２の青色蛍光体２５と赤色蛍光体２６の劣化防止も、同様に効果を発揮することができる。   Further, since the light absorber 33 of the second package 32 can also block the side light of the blue light B1 from the blue LED 12 of the first package 31 to some extent, the color of the emitted light 2 when the second package 32 is not lit. The effect of preventing the change in taste and preventing the deterioration of the blue phosphor 25 and the red phosphor 26 of the second package 32 can be similarly exhibited.

［第２の実施形態の出射光の波長分布の説明］
第２の実施形態の半導体発光装置３０の波長分布は、第１パッケージ３１と第２パッケージ３２のそれぞれのＬＥＤと、このＬＥＤを覆う封止部材１４、２４に含有される蛍光体の構成が同じであるので、第1の実施形態の波長分布（図３、図４参照）と同様である。すなわち、半導体発光装置３０は、第１パッケージ３１からの疑似白色光の波長分布を第２パッケージ３２によって適切に補完して、優れた演色性を有し、自然光に近い高輝度な発光を得ることが出来る。 [Description of Wavelength Distribution of Emitted Light of Second Embodiment]
The wavelength distribution of the semiconductor light emitting device 30 according to the second embodiment is the same for the LEDs of the first package 31 and the second package 32 and for the phosphors contained in the sealing members 14 and 24 covering the LEDs. Therefore, the wavelength distribution is the same as that of the first embodiment (see FIGS. 3 and 4). That is, the semiconductor light emitting device 30 appropriately complements the wavelength distribution of the pseudo white light from the first package 31 with the second package 32 to obtain light emission having excellent color rendering properties and close to natural light. I can do it.

また、第２の実施形態の半導体発光装置３０は、第1の実施形態で示した駆動回路３（図５参照）と同一の駆動回路を設けることによって、用途に応じて第１パッケージ３１の青色ＬＥＤ１２と第２パッケージ３２の近紫外ＬＥＤ２２の点灯と非点灯を個別に制御して、出射光の波長分布を変化させ、出射光の輝度や色味を切り替えることができる。   In addition, the semiconductor light emitting device 30 of the second embodiment is provided with the same drive circuit as the drive circuit 3 (see FIG. 5) shown in the first embodiment, so that the blue color of the first package 31 depends on the application. The lighting and non-lighting of the LED 12 and the near-ultraviolet LED 22 of the second package 32 can be individually controlled to change the wavelength distribution of the emitted light and switch the luminance and color of the emitted light.

［第３の実施形態の構成説明：図８、図９］
次に、本発明の第３の実施形態の半導体発光装置の構成を図８と図９を用いて説明する。
ここで、図８は、図９で示す斜視図の半導体発光装置を切断線Ｂ−Ｂ′で切断した断面図である。図８と図９において、符号４０は本発明の第３の実施形態の半導体発光装置である。半導体発光装置４０の基本構造は、前述した第１の実施形態の半導体発光装置１と同様であるので、一部の構成要素を除いて同一要素には同一番号を付し、重複する説明は一部省略する。 [Description of Configuration of Third Embodiment: FIGS. 8 and 9]
Next, the structure of the semiconductor light-emitting device of the 3rd Embodiment of this invention is demonstrated using FIG. 8 and FIG.
Here, FIG. 8 is a cross-sectional view of the semiconductor light emitting device of the perspective view shown in FIG. 9 taken along the cutting line BB ′. 8 and 9, reference numeral 40 denotes a semiconductor light emitting device according to the third embodiment of the present invention. The basic structure of the semiconductor light emitting device 40 is the same as that of the semiconductor light emitting device 1 of the first embodiment described above. Omitted.

半導体発光装置４０は、第１および第２の実施形態と異なり、２つのパッケージを一体化したひとつのパッケージによって成り、１枚の基板４１によって構成される。すなわち、半導体発光装置４０は、略長方形の１枚の基板４１の長手方向に沿って青色ＬＥＤ１２と近紫外ＬＥＤ２２とが、バンプ方式によって実装されている。   Unlike the first and second embodiments, the semiconductor light emitting device 40 is composed of one package in which two packages are integrated, and is composed of a single substrate 41. That is, in the semiconductor light emitting device 40, the blue LED 12 and the near-ultraviolet LED 22 are mounted by a bump method along the longitudinal direction of a substantially rectangular substrate 41.

また、基板４１上には、白色樹脂で成る封止枠４２が形成されている。この封止枠４２は、青色ＬＥＤ１２と近紫外ＬＥＤ２２がそれぞれ中央となるように２つの円形の貫通孔４２ａ、４２ｂを有し、この貫通孔４２ａ、４２ｂの内部には、青色ＬＥＤ１２と近紫外ＬＥＤ２２をそれぞれ覆って封止する封止部材４３ａ、４３ｂが充填されている。そして、封止部材４３ａは、青色ＬＥＤ１２からの出射光で励起するＹＡＧ蛍光体１５を含有し、封止部材４３ｂは、近紫外ＬＥＤ２２からの出射光で励起する青色蛍光体２５と赤色蛍光体２６とを含有している。   On the substrate 41, a sealing frame 42 made of a white resin is formed. The sealing frame 42 has two circular through-holes 42a and 42b so that the blue LED 12 and the near-ultraviolet LED 22 are in the center, and the blue LED 12 and the near-ultraviolet LED 22 are inside the through-holes 42a and 42b. Are filled with sealing members 43a and 43b. The sealing member 43a contains the YAG phosphor 15 that is excited by the emitted light from the blue LED 12, and the sealing member 43b is the blue phosphor 25 and the red phosphor 26 that are excited by the emitted light from the near-ultraviolet LED 22. Containing.

また、近紫外ＬＥＤ２２を中央に配置した貫通孔４２ｂの周囲の封止枠４２の内部には、カーボン材等で成る光吸収体４４が円柱状に形成されている。この光吸収体４４は、図９の破線で示すように、近紫外ＬＥＤ２２の周囲全体を囲み、その高さは図８に示すように封止枠４２の高さより低くなるように形成されている。従って、光吸収体４４は、実際には半導体発光装置４０の外側から見ることはできない。   A light absorber 44 made of a carbon material or the like is formed in a cylindrical shape inside the sealing frame 42 around the through hole 42b in which the near ultraviolet LED 22 is arranged in the center. The light absorber 44 surrounds the entire periphery of the near-ultraviolet LED 22 as shown by a broken line in FIG. 9, and its height is lower than the height of the sealing frame 42 as shown in FIG. . Therefore, the light absorber 44 cannot actually be seen from the outside of the semiconductor light emitting device 40.

このように、第３の実施形態の半導体発光装置４０は、前述した第１および第２の実施形態の第１パッケージと第２パッケージを一体化してひとつのパッケージとしたことが特徴であるが、青色ＬＥＤ１２と近紫外ＬＥＤ２２の配置と、両ＬＥＤを覆う封止部材に含有される蛍光体は、第１および第２の実施形態と同一であり、また、近紫外ＬＥＤ２２の周囲を光吸収体で囲う構成は、第２の実施形態と同一である。   As described above, the semiconductor light emitting device 40 of the third embodiment is characterized in that the first package and the second package of the first and second embodiments described above are integrated into one package. The arrangement of the blue LED 12 and the near ultraviolet LED 22 and the phosphor contained in the sealing member covering both the LEDs are the same as those in the first and second embodiments, and the periphery of the near ultraviolet LED 22 is a light absorber. The enclosing configuration is the same as in the second embodiment.

［第３の実施形態の出射光の説明：図８］
次に、第３の実施形態の半導体発光装置４０の動作によって出射される出射光を図８を用いて説明する。図８において、半導体発光装置４０は、前述したように、１枚の基板４１に青色ＬＥＤ１２と近紫外ＬＥＤ２２が実装されており、前述した第１および第２の実施形態と同様に、半導体発光装置４０からは、青色光Ｂ１、黄色光Ｙ、青色光Ｂ２、赤色光Ｒが合成された出射光２が外部に出射される。この出射光２の波長分布特性は、第１の実施形態の波長分布（図４参照）と同様であるので、ここでの説明は省略する。 [Description of Emitted Light of Third Embodiment: FIG. 8]
Next, the emitted light emitted by the operation of the semiconductor light emitting device 40 of the third embodiment will be described with reference to FIG. In FIG. 8, as described above, in the semiconductor light emitting device 40, the blue LED 12 and the near-ultraviolet LED 22 are mounted on one substrate 41. As in the first and second embodiments described above, the semiconductor light emitting device From 40, outgoing light 2 in which blue light B1, yellow light Y, blue light B2, and red light R are combined is emitted to the outside. Since the wavelength distribution characteristic of the emitted light 2 is the same as the wavelength distribution of the first embodiment (see FIG. 4), description thereof is omitted here.

また、近紫外ＬＥＤ２２からの近紫外光ｎＵＶは広範囲に出射され、図面上の上部だけでなく側面方向にも出射される。そして、この近紫外光ｎＵＶが隣接する青色ＬＥＤ１２の方向に出射されると、近紫外光ｎＵＶは青色ＬＥＤ１２を覆うＹＡＧ蛍光体１５を含有する封止部材４３ａに到達し、ＹＡＧ蛍光体１５に照射されることになる。   Further, near-ultraviolet light nUV from the near-ultraviolet LED 22 is emitted in a wide range, and is emitted not only in the upper part of the drawing but also in the side surface direction. When the near-ultraviolet light nUV is emitted in the direction of the adjacent blue LED 12, the near-ultraviolet light nUV reaches the sealing member 43 a containing the YAG phosphor 15 that covers the blue LED 12 and irradiates the YAG phosphor 15. Will be.

この結果、第２の実施形態で前述したように、出射光２の波長分布の変化やＹＡＧ蛍光体１５の劣化等の問題が生じるが、第３の実施形態の半導体発光装置４０は、近紫外ＬＥＤ２２を囲むように光吸収体４４が形成されているので、側面方向に出射される近紫外光ｎＵＶは、光吸収体４４によって遮断され、隣接する青色ＬＥＤ１２側には近紫外光ｎＵＶが到達しない。これにより、近紫外光ｎＵＶが側面方向に漏れることによる不具合を防止することができる。   As a result, as described above in the second embodiment, problems such as a change in the wavelength distribution of the emitted light 2 and deterioration of the YAG phosphor 15 occur, but the semiconductor light emitting device 40 of the third embodiment has a near-ultraviolet light. Since the light absorber 44 is formed so as to surround the LED 22, the near ultraviolet light nUV emitted in the side surface direction is blocked by the light absorber 44, and the near ultraviolet light nUV does not reach the adjacent blue LED 12 side. . Thereby, the malfunction by near ultraviolet light nUV leaking to a side surface direction can be prevented.

特に本実施形態では、１枚の基板４１上に青色ＬＥＤ１２と近紫外ＬＥＤ２２が近接して実装されるために、漏れ光の影響が大きいので、光吸収体４４よって漏れ光を遮断する効果はたいへん有効である。また、光吸収体４４は、青色ＬＥＤ１２からの青色光Ｂ１が近紫外ＬＥＤ２２側に漏れる影響も低減することができる。   In particular, in the present embodiment, since the blue LED 12 and the near-ultraviolet LED 22 are mounted close to each other on a single substrate 41, the influence of leakage light is large, so the effect of blocking the leakage light by the light absorber 44 is very great. It is valid. Moreover, the light absorber 44 can also reduce the influence of the blue light B1 from the blue LED 12 leaking to the near ultraviolet LED 22 side.

［第３の実施形態の駆動回路を含めた回路構成の説明：図１０］
次に、第３の実施形態の半導体発光装置の駆動回路を含めた回路構成の一例を図１０を用いて説明する。図１０において、半導体発光装置４０は、前述したように、１枚の基板４１で構成され、青色ＬＥＤ１２と近紫外ＬＥＤ２２が実装されている。 [Description of Circuit Configuration Including Third Embodiment Drive Circuit: FIG. 10]
Next, an example of a circuit configuration including the drive circuit of the semiconductor light emitting device of the third embodiment will be described with reference to FIG. In FIG. 10, the semiconductor light emitting device 40 is composed of one substrate 41 as described above, and the blue LED 12 and the near ultraviolet LED 22 are mounted thereon.

青色ＬＥＤ１２のアノード端子は電極端子４５ａに接続し、カソード端子は共通電極である電極端子４５ｃに接続している。また、近紫外ＬＥＤ２２のアノード端子は電極端子４５ｂに接続し、カソード端子は共通電極である電極端子４５ｃに接続している。なお、当然であるが、共通電極はアノード端子側でもよい。   The anode terminal of the blue LED 12 is connected to the electrode terminal 45a, and the cathode terminal is connected to the electrode terminal 45c which is a common electrode. The anode terminal of the near-ultraviolet LED 22 is connected to the electrode terminal 45b, and the cathode terminal is connected to the electrode terminal 45c which is a common electrode. Of course, the common electrode may be on the anode terminal side.

また、符号４は半導体発光装置４０を駆動する駆動回路である。駆動回路４は、ふたつの出力端子ＯＵＴ１、ＯＵＴ２と、共通端子ＣＯＭを有しており、出力端子ＯＵＴ１は、青色ＬＥＤ１２に接続している電極端子４５ａに接続されて、所定の駆動電流を青色ＬＥＤ１２に供給する。また、出力端子ＯＵＴ２は、近紫外ＬＥＤ２２に接続している電極端子４５ｂに接続されて、所定の駆動電流を近紫外ＬＥＤ２２に供給する。また、共通端子ＣＯＭは、青色ＬＥＤ１２と近紫外ＬＥＤ２２との共通電極である電極端子４５ｃに接続されている。   Reference numeral 4 denotes a drive circuit for driving the semiconductor light emitting device 40. The drive circuit 4 has two output terminals OUT1 and OUT2 and a common terminal COM. The output terminal OUT1 is connected to an electrode terminal 45a connected to the blue LED 12, and a predetermined drive current is supplied to the blue LED 12. To supply. The output terminal OUT2 is connected to the electrode terminal 45b connected to the near-ultraviolet LED 22, and supplies a predetermined drive current to the near-ultraviolet LED 22. The common terminal COM is connected to an electrode terminal 45c that is a common electrode for the blue LED 12 and the near-ultraviolet LED 22.

また、駆動回路４は、２つの操作スイッチＳＷ１、ＳＷ２を備えており、操作スイッチＳＷ１をＯＮすることで、出力端子ＯＵＴ１から駆動電流が出力し、また、操作スイッチＳＷ２をＯＮすることで、出力端子ＯＵＴ２から駆動電流が出力する。この動作によって、駆動回路４は、操作スイッチＳＷ１、ＳＷ２により、半導体発光装置４０の青色ＬＥＤ１２と近紫外ＬＥＤ２２の点灯と非点灯を個別に制御することができる。   The drive circuit 4 includes two operation switches SW1 and SW2. When the operation switch SW1 is turned on, the drive current is output from the output terminal OUT1, and when the operation switch SW2 is turned on, the drive circuit 4 is output. A drive current is output from the terminal OUT2. By this operation, the drive circuit 4 can individually control lighting and non-lighting of the blue LED 12 and the near-ultraviolet LED 22 of the semiconductor light emitting device 40 by the operation switches SW1 and SW2.

以上のように、本発明の第３の実施形態は、第１および第２の実施形態と同様に、青色ＬＥＤ１２と近紫外ＬＥＤ２２を備え、青色ＬＥＤ１２によってＹＡＧ蛍光体１５を励起し、近紫外ＬＥＤ２２によって青色蛍光体２５と赤色蛍光体２６を励起することで、優れた演色性を有し、自然光に近い高輝度な発光を得ることが出来る。   As described above, the third embodiment of the present invention includes the blue LED 12 and the near-ultraviolet LED 22 as in the first and second embodiments, and the YAG phosphor 15 is excited by the blue LED 12, and the near-ultraviolet LED 22. By exciting the blue phosphor 25 and the red phosphor 26, it is possible to obtain light emission having excellent color rendering properties and high brightness close to natural light.

また、青色ＬＥＤ１２と近紫外ＬＥＤ２２を一体化した１枚の基板４１に実装することで、小型化が可能であり、小型の照明装置等への搭載が容易である。また、２つのＬＥＤを１枚の基板４１に実装したことによって、図１０で示したように、たとえば、カソード端子を共通にして外部への電極端子を３本にできるので、駆動回路４との配線本数を減らすことができる利点がある。また、青色ＬＥＤ１２と近紫外ＬＥＤ２２の特性が揃っているならば、基板４１の内部で並列接続して電極端子を２本にすることも可能である。   Further, by mounting the blue LED 12 and the near-ultraviolet LED 22 on a single substrate 41, it is possible to reduce the size, and it is easy to mount on a small lighting device or the like. Further, by mounting two LEDs on one substrate 41, as shown in FIG. 10, for example, the cathode terminal can be made common and the number of electrode terminals to the outside can be made three. There is an advantage that the number of wirings can be reduced. Further, if the characteristics of the blue LED 12 and the near-ultraviolet LED 22 are uniform, it is possible to connect two electrode terminals in parallel within the substrate 41.

また、第３の実施形態の半導体発光装置４０は、第１および第２の実施形態と同様に、駆動回路４を設けることによって、用途に応じて青色ＬＥＤ１２と近紫外ＬＥＤ２２の点灯と非点灯を個別に制御して、出射光の波長分布を変化させ、出射光の輝度や色味を切り替えることができる。   Further, in the semiconductor light emitting device 40 of the third embodiment, similarly to the first and second embodiments, the drive circuit 4 is provided so that the blue LED 12 and the near-ultraviolet LED 22 are turned on and off according to the application. By controlling individually, the wavelength distribution of the emitted light can be changed, and the luminance and color of the emitted light can be switched.

［第４の実施形態の構成説明：図１１、図１２］
次に、本発明の第４の実施形態の半導体発光装置の構成を図１１と図１２を用いて説明する。ここで、図１１は第３の実施形態と同様な断面図であり、図１２はその斜視図である。図１１と図１２において、符号５０は本発明の第４の実施形態の半導体発光装置である。半導体発光装置５０の基本構造は、前述した第３の実施形態の半導体発光装置４０と同様であるので、同一要素には同一番号を付し、重複する説明は一部省略する。 [Description of Configuration of Fourth Embodiment: FIGS. 11 and 12]
Next, the structure of the semiconductor light-emitting device of the 4th Embodiment of this invention is demonstrated using FIG. 11 and FIG. Here, FIG. 11 is a cross-sectional view similar to that of the third embodiment, and FIG. 12 is a perspective view thereof. 11 and 12, reference numeral 50 denotes a semiconductor light-emitting device according to the fourth embodiment of the present invention. Since the basic structure of the semiconductor light-emitting device 50 is the same as that of the semiconductor light-emitting device 40 of the third embodiment described above, the same elements are denoted by the same reference numerals, and a duplicate description is partially omitted.

半導体発光装置５０は、第３の実施形態と同様に２つのパッケージを一体化した１枚の基板４１によって構成される。すなわち、半導体発光装置５０は、略長方形の１枚の基板４１に青色ＬＥＤ１２と近紫外ＬＥＤ２２が、バンプ方式によって実装されている。   Similar to the third embodiment, the semiconductor light emitting device 50 is configured by a single substrate 41 in which two packages are integrated. That is, in the semiconductor light emitting device 50, the blue LED 12 and the near-ultraviolet LED 22 are mounted on a single substantially rectangular substrate 41 by a bump method.

また、基板４１上には白色樹脂で成る封止枠４２が形成され、この封止枠４２は、２つの円形の貫通孔４２ａ、４２ｂを有し、この貫通孔４２ａ、４２ｂの内部には、青色ＬＥＤ１２と近紫外ＬＥＤ２２をそれぞれ封止する封止部材４３ａ、４３ｂが充填されている。そして、封止部材４３ａは、青色ＬＥＤ１２からの出射光で励起するＹＡＧ蛍光体１５を含有し、封止部材４３ｂは、近紫外ＬＥＤ２２からの出射光で励起する青色蛍光体２５と赤色蛍光体２６とを含有している。   In addition, a sealing frame 42 made of a white resin is formed on the substrate 41. The sealing frame 42 has two circular through holes 42a and 42b, and inside the through holes 42a and 42b, Sealing members 43a and 43b for sealing the blue LED 12 and the near-ultraviolet LED 22 are filled. The sealing member 43a contains the YAG phosphor 15 that is excited by the emitted light from the blue LED 12, and the sealing member 43b is the blue phosphor 25 and the red phosphor 26 that are excited by the emitted light from the near-ultraviolet LED 22. Containing.

また、青色ＬＥＤ１２を中央に配置した貫通孔４２ａの周囲の封止枠４２の内部には、カーボン材等で成る光吸収体５１が円柱状に形成されている。また、同様に近紫外ＬＥＤ２２を中央に配置した貫通孔４２ｂの周囲の封止枠４２の内部には、カーボン材等で成る光吸収体５２が円柱状に形成されている。この光吸収体５１、５２は、図１２の実線で示すように、青色ＬＥＤ１２と近紫外ＬＥＤ２２の周囲全体をそれぞれ囲み、その高さは封止枠４２の高さに等しく形成されている。   A light absorber 51 made of a carbon material or the like is formed in a cylindrical shape inside the sealing frame 42 around the through hole 42a in which the blue LED 12 is arranged in the center. Similarly, a light absorber 52 made of a carbon material or the like is formed in a cylindrical shape inside the sealing frame 42 around the through hole 42b in which the near-ultraviolet LED 22 is arranged in the center. As shown by the solid lines in FIG. 12, the light absorbers 51 and 52 surround the entire periphery of the blue LED 12 and the near-ultraviolet LED 22, and the height thereof is formed to be equal to the height of the sealing frame 42.

ここで、第3の実施形態と第４の実施形態の違いは、この光吸収体の違いにある。すなわち、第3の実施形態の半導体発光装置４０では、光吸収体４４が近紫外ＬＥＤ２２の周囲にのみ形成され、且つ、その高さは封止枠４２よりも低く形成されている（図８参照）。一方、第４の実施形態の半導体発光装置５０では、青色ＬＥＤ１２と近紫外ＬＥＤ２２の両方の周囲の封止枠４２の内部にそれぞれ光吸収体５１、５２が形成され、且つ、その高さは封止枠４２と同じである（図１１参照）。   Here, the difference between the third embodiment and the fourth embodiment is the difference in the light absorber. That is, in the semiconductor light emitting device 40 of the third embodiment, the light absorber 44 is formed only around the near-ultraviolet LED 22 and the height thereof is lower than the sealing frame 42 (see FIG. 8). ). On the other hand, in the semiconductor light emitting device 50 of the fourth embodiment, the light absorbers 51 and 52 are respectively formed inside the sealing frames 42 around both the blue LED 12 and the near ultraviolet LED 22 and the height thereof is sealed. This is the same as the stop frame 42 (see FIG. 11).

［第４の実施形態の出射光の説明：図１１］
次に、第４の実施形態の半導体発光装置５０の動作によって出射される出射光を図１１を用いて説明する。図１１において、半導体発光装置５０は、前述したように、１枚の基板４１に青色ＬＥＤ１２と近紫外ＬＥＤ２２が実装されており、第１〜第３の実施形態と同様に、半導体発光装置５０からは、青色光Ｂ１、黄色光Ｙ、青色光Ｂ２、赤色光Ｒが合成された出射光２が外部に出射される。従って、この出射光２の波長分布は、第１の実施形態の波長分布（図４参照）と同様であるので、ここでの説明は省略する。 [Description of Emitted Light of Fourth Embodiment: FIG. 11]
Next, outgoing light emitted by the operation of the semiconductor light emitting device 50 of the fourth embodiment will be described with reference to FIG. In FIG. 11, as described above, in the semiconductor light emitting device 50, the blue LED 12 and the near-ultraviolet LED 22 are mounted on one substrate 41. From the semiconductor light emitting device 50, as in the first to third embodiments. The outgoing light 2 in which the blue light B1, the yellow light Y, the blue light B2, and the red light R are combined is emitted to the outside. Accordingly, the wavelength distribution of the emitted light 2 is the same as the wavelength distribution of the first embodiment (see FIG. 4), and thus description thereof is omitted here.

また、近紫外ＬＥＤ２２からの近紫外光ｎＵＶは、広範囲に出射され、図面上の上部だけでなく側面方向にも出射される。そして、この近紫外光ｎＵＶが青色ＬＥＤ１２の方向に出射されると、近紫外光ｎＵＶは青色ＬＥＤ１２を覆うＹＡＧ蛍光体１５を含有する封止部材４３ａに到達し、ＹＡＧ蛍光体１５に照射されることになる。   Further, the near-ultraviolet light nUV from the near-ultraviolet LED 22 is emitted in a wide range, and is emitted not only in the upper part of the drawing but also in the side surface direction. When the near-ultraviolet light nUV is emitted in the direction of the blue LED 12, the near-ultraviolet light nUV reaches the sealing member 43 a containing the YAG phosphor 15 that covers the blue LED 12 and is irradiated on the YAG phosphor 15. It will be.

この結果、前述したように、出射光２の波長分布の変化やＹＡＧ蛍光体１５の劣化等の問題が生じるが、第４の実施形態の半導体発光装置５０は、近紫外ＬＥＤ２２を囲むように光吸収体５２が形成されているので、側面方向に出射される近紫外光ｎＵＶは、光吸収体５２によって遮断され、隣接する青色ＬＥＤ１２側には近紫外光ｎＵＶが到達しない。これにより、近紫外光ｎＵＶが側面方向に漏れることによる不具合を防止することができる。また、光吸収体５２は、封止枠４２の高さと同じ高さまで形成されているので、側面方向に出射される近紫外光ｎＵＶを確実に遮断することができる。   As a result, problems such as a change in the wavelength distribution of the emitted light 2 and deterioration of the YAG phosphor 15 occur as described above. However, the semiconductor light emitting device 50 according to the fourth embodiment does not emit light so as to surround the near-ultraviolet LED 22. Since the absorber 52 is formed, the near ultraviolet light nUV emitted in the side surface direction is blocked by the light absorber 52, and the near ultraviolet light nUV does not reach the adjacent blue LED 12 side. Thereby, the malfunction by near ultraviolet light nUV leaking to a side surface direction can be prevented. Further, since the light absorber 52 is formed up to the same height as the sealing frame 42, the near-ultraviolet light nUV emitted in the side surface direction can be reliably blocked.

また同様に、青色ＬＥＤ１２からの青色光Ｂ１も、広範囲に出射され、図面上の上部だけでなく側面方向にも出射される。そして、この青色光Ｂ１が近紫外ＬＥＤ２２の方向に出射されると、青色光Ｂ１は近紫外ＬＥＤ２２を覆う青色蛍光体２５と赤色蛍光体２６を含有する封止部材４３ｂに到達し、青色蛍光体２５と赤色蛍光体２６に照射されることになる。   Similarly, the blue light B1 from the blue LED 12 is emitted in a wide range and is emitted not only in the upper part of the drawing but also in the side surface direction. When the blue light B1 is emitted in the direction of the near ultraviolet LED 22, the blue light B1 reaches the sealing member 43b containing the blue phosphor 25 and the red phosphor 26 covering the near ultraviolet LED 22, and the blue phosphor 25 and the red phosphor 26 are irradiated.

これにより、青色蛍光体２５と赤色蛍光体２６が励起されて、出射光２の波長分布の変化や蛍光体の劣化等の問題が生じるが、第４の実施形態の半導体発光装置５０は、青色ＬＥＤ１２を囲むように光吸収体５１が形成されているので、側面方向に出射される青色光Ｂ１は、光吸収体５１によって遮断され、隣接する近紫外ＬＥＤ２２側には青色光Ｂ１が到達しない。この結果、青色光Ｂ１が側面方向に漏れることによる不具合を防止することができる。また、光吸収体５１は、封止枠４２の高さと同じ高さまで形成されているので、側面方向に出射される青色光Ｂ１を確実に遮断することができる。   As a result, the blue phosphor 25 and the red phosphor 26 are excited to cause problems such as a change in the wavelength distribution of the emitted light 2 and deterioration of the phosphor, but the semiconductor light emitting device 50 of the fourth embodiment is blue. Since the light absorber 51 is formed so as to surround the LED 12, the blue light B1 emitted in the side surface direction is blocked by the light absorber 51, and the blue light B1 does not reach the adjacent near ultraviolet LED 22 side. As a result, it is possible to prevent problems caused by the blue light B1 leaking in the side surface direction. Further, since the light absorber 51 is formed to the same height as the sealing frame 42, the blue light B1 emitted in the side surface direction can be reliably blocked.

ここで本実施形態では、第３の実施形態と同様に、１枚の基板４１に青色ＬＥＤ１２と近紫外ＬＥＤ２２が近接して実装されるため、漏れ光の影響が大きいので、光吸収体５１、５２よって漏れ光を遮断する効果はたいへん有効である。特に、本実施形態の光吸収体５１、５２は、青色ＬＥＤ１２と近紫外ＬＥＤ２２の両方の周囲を囲み、且つ、その高さが封止枠４２と同じであるので、側面方向へ出射される出射光の漏れを確実に遮断でき、その効果はきわめて大きい。また、第４の実施形態の他の効果については、前述した第３の実施形態と同様であるので、ここでの説明は省略する。   Here, in this embodiment, since the blue LED 12 and the near-ultraviolet LED 22 are mounted close to each other on a single substrate 41 as in the third embodiment, the light absorber 51, Thus, the effect of blocking the leaked light is very effective. In particular, since the light absorbers 51 and 52 of the present embodiment surround both the blue LED 12 and the near-ultraviolet LED 22 and have the same height as the sealing frame 42, the light absorbers 51 and 52 are emitted in the lateral direction. The leakage of incident light can be reliably blocked, and the effect is extremely large. The other effects of the fourth embodiment are the same as those of the third embodiment described above, and a description thereof is omitted here.

尚、本発明の実施例で示した各図面等は、これに限定されるものではなく、本発明の要旨を満たすものであれば、任意に変更してよい。   It should be noted that the drawings shown in the embodiments of the present invention are not limited to this, and may be arbitrarily changed as long as they satisfy the gist of the present invention.

本発明の半導体発光装置は、自然光に近い演色性に優れた発光を得ることができるので、高演色の照明が重要視される様々な場所での照明用光源等に幅広く利用することが出来る。   Since the semiconductor light emitting device of the present invention can obtain light emission excellent in color rendering properties close to natural light, it can be widely used for illumination light sources in various places where high color rendering illumination is important.

１、３０、４０、５０ 半導体発光装置
２ 出射光
３、４ 駆動回路
１０、３１ 第１パッケージ
１１、２１、４１ 基板
１２ 青色系半導体発光素子（青色ＬＥＤ）
１３、２３、４２ 封止枠
１３ａ、２３ａ、４２ａ、４２ｂ 貫通孔
１４、２４、４３ａ、４３ｂ 封止部材
１５ ＹＡＧ蛍光体
１７ａ、１７ｂ、２７ａ、２７ｂ、４５ａ、４５ｂ、４５ｃ 電極端子
２０、３２ 第２パッケージ
２２ 近紫外系半導体発光素子（近紫外ＬＥＤ）
２５ 青色蛍光体
２６ 赤色蛍光体
３３、４４、５１、５２ 光吸収体
ＳＷ１、ＳＷ２ 操作スイッチ
Ｒ 赤色光
Ｂ１、Ｂ２ 青色光
Ｙ 黄色光
ｎＵＶ 近紫外光
DESCRIPTION OF SYMBOLS 1, 30, 40, 50 Semiconductor light-emitting device 2 Emission light 3, 4 Drive circuit 10, 31 1st package 11, 21, 41 Substrate 12 Blue type semiconductor light emitting element (blue LED)
13, 23, 42 Sealing frame 13a, 23a, 42a, 42b Through hole 14, 24, 43a, 43b Sealing member 15 YAG phosphor 17a, 17b, 27a, 27b, 45a, 45b, 45c Electrode terminal 20, 32 First 2 packages 22 Near-ultraviolet semiconductor light-emitting element (near-ultraviolet LED)
25 Blue phosphor 26 Red phosphor 33, 44, 51, 52 Light absorber SW1, SW2 Operation switch R Red light B1, B2 Blue light Y Yellow light nUV Near ultraviolet light

Claims (2)

基板上に青色系半導体発光素子と近紫外系半導体発光素子とを実装し、前記両半導体発光素子のそれぞれを覆う封止部材を有する半導体発光装置において、
前記青色系半導体発光素子を覆う前記封止部材は、前記青色系半導体発光素子からの青色光によって励起するＹＡＧ蛍光体を含有し、
前記近紫外系半導体発光素子を覆う前記封止部材は、前記近紫外系半導体発光素子からの近紫外光によって励起する青色蛍光体と赤色蛍光体とを含有し、
前記青色蛍光体からの出射光は、前記青色系半導体発光素子からの出射光と前記ＹＡＧ蛍光体からの出射光とを合わせた波長分布の谷間を補完し、前記赤色蛍光体からの出射光は、前記ＹＡＧ蛍光体からの出射光よりも長波長側の波長分布領域を補完することを特徴とする半導体発光装置。 In a semiconductor light emitting device having a sealing member covering each of the semiconductor light emitting elements, mounting a blue semiconductor light emitting element and a near ultraviolet semiconductor light emitting element on a substrate,
The sealing member covering the blue semiconductor light emitting element contains a YAG phosphor excited by blue light from the blue semiconductor light emitting element,
The sealing member covering the near-ultraviolet semiconductor light-emitting element contains a blue phosphor and a red phosphor that are excited by near-ultraviolet light from the near-ultraviolet semiconductor light-emitting element,
Emitted light of the blue phosphor or colleagues, to complement the valley wavelength distribution obtained by combining the light emitted from the YAG phosphor and the light emitted from the blue semiconductor light emitting element, light emitted from the red phosphor Supplements the wavelength distribution region on the longer wavelength side than the light emitted from the YAG phosphor . 前記青色系半導体発光素子と前記近紫外系半導体発光素子とを個別に点灯させる駆動回路を有することを特徴とする請求項１に記載の半導体発光装置。 The semiconductor light emitting device according to claim 1 , further comprising a drive circuit that individually lights the blue semiconductor light emitting element and the near ultraviolet semiconductor light emitting element.
JP2013217872A 2013-10-18 2013-10-18 Semiconductor light emitting device Active JP6284738B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013217872A JP6284738B2 (en) 2013-10-18 2013-10-18 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013217872A JP6284738B2 (en) 2013-10-18 2013-10-18 Semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JP2015079924A JP2015079924A (en) 2015-04-23
JP6284738B2 true JP6284738B2 (en) 2018-02-28

Family

ID=53011103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013217872A Active JP6284738B2 (en) 2013-10-18 2013-10-18 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JP6284738B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017079278A (en) * 2015-10-21 2017-04-27 スタンレー電気株式会社 Light receiving/emitting device and light emitting device
JP6526317B2 (en) 2016-03-24 2019-06-05 シャープ株式会社 Light source device and light emitting device
CN108183099B (en) * 2017-12-21 2021-06-15 厦门市三安光电科技有限公司 White light LED packaging structure and white light source system
JP6846072B1 (en) * 2019-09-17 2021-03-24 Ｚｉｇｅｎライティングソリューション株式会社 Light emitting device and lighting device
CN114649447A (en) * 2020-12-18 2022-06-21 日亚化学工业株式会社 Method for manufacturing light emitting device and light emitting device
CN114543004A (en) * 2022-03-14 2022-05-27 厦门普为光电科技有限公司 Light-emitting diode lamp with high color rendering property and method for improving color rendering property of lamp

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7432642B2 (en) * 2002-04-25 2008-10-07 Nichia Corporation Semiconductor light emitting device provided with a light conversion element using a haloborate phosphor composition
JP2005005482A (en) * 2003-06-12 2005-01-06 Citizen Electronics Co Ltd Led light emitting device and color display device using the same
JP2006005290A (en) * 2004-06-21 2006-01-05 Citizen Electronics Co Ltd Light emitting diode
KR20060000544A (en) * 2004-06-29 2006-01-06 삼성전자주식회사 Back light for display device, light source for display device, and light emitting diode using therefor
JP4679183B2 (en) * 2005-03-07 2011-04-27 シチズン電子株式会社 Light emitting device and lighting device
JP2007204730A (en) * 2005-09-06 2007-08-16 Sharp Corp Phosphor and light-emitting device
TWI331397B (en) * 2007-09-03 2010-10-01 Ledtech Electronics Corp Array type light-emitting device with high color rendering index
JP2009231525A (en) * 2008-03-24 2009-10-08 Mitsubishi Chemicals Corp Light-emitting module, and illuminator
JP5369486B2 (en) * 2008-04-28 2013-12-18 豊田合成株式会社 Light emitting device
CN101621054A (en) * 2008-07-01 2010-01-06 展晶科技(深圳)有限公司 LED light source device
JP2010103404A (en) * 2008-10-27 2010-05-06 Sanyo Electric Co Ltd Lighting device
JP2010129583A (en) * 2008-11-25 2010-06-10 Citizen Electronics Co Ltd Lighting fixture
KR101018153B1 (en) * 2008-11-27 2011-02-28 삼성엘이디 주식회사 Light emitting diode package
JP2011176300A (en) * 2010-01-29 2011-09-08 Mitsubishi Chemicals Corp Semiconductor light emitting device, light emitting module, and lighting system
JP2011159809A (en) * 2010-02-01 2011-08-18 Mitsubishi Chemicals Corp White light-emitting device
JP2012009684A (en) * 2010-06-25 2012-01-12 Citizen Electronics Co Ltd Semiconductor light-emitting device
JP2012199539A (en) * 2011-03-08 2012-10-18 Mitsubishi Chemicals Corp Light-emitting device and luminaire equipped with light-emitting device
JP2012216717A (en) * 2011-04-01 2012-11-08 Ccs Inc Light emitting device
JP5980516B2 (en) * 2012-02-10 2016-08-31 シチズン電子株式会社 LED light emitting device

Also Published As

Publication number Publication date
JP2015079924A (en) 2015-04-23

Similar Documents

Publication Publication Date Title
JP6284738B2 (en) Semiconductor light emitting device
JP5311676B2 (en) White light emitting device
JP4679183B2 (en) Light emitting device and lighting device
JP5410342B2 (en) Light emitting device
JP2010080935A (en) Semiconductor light emitting device, backlight source using the same, backlight source system, display, and electronic apparatus
US7834372B2 (en) High luminous flux warm white solid state lighting device
JP6230392B2 (en) Light emitting device
US9559083B2 (en) Semiconductor light-emitting device
JP2007005549A (en) White-light emitting diode lamp
TW201537539A (en) Display structure
US10424562B2 (en) Light emitting device with phosphors
KR101071020B1 (en) Led module for illumination and illumination apparatus including the same
KR20100098463A (en) Light emitting module
JP3969660B2 (en) White LED lamp
KR20100076655A (en) White light emitting device
KR101399997B1 (en) Led package with hexagonal structure
JP2013069881A (en) Lighting device
JP2017063085A (en) Light emitting module
TWI462263B (en) Light emitting diode lighting device
JP2014194858A (en) Led lighting device
KR20150051780A (en) Light emitting module
JP2012216717A (en) Light emitting device
JP7450462B2 (en) light emitting device
KR100646633B1 (en) Light emitting device
JP2006054224A (en) Light-emitting device

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20150202

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160923

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170628

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170711

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170908

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171003

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171204

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180109

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180131

R150 Certificate of patent or registration of utility model

Ref document number: 6284738

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250