JP6282273B2 - 多結晶半導体材料の結晶構造を解析するための方法 - Google Patents
多結晶半導体材料の結晶構造を解析するための方法 Download PDFInfo
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
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- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
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- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
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Description
Claims (16)
- 多結晶半導体材料の結晶構造を解析するための方法であって、
前記材料にルミネッセンス信号を放出させるために前記材料を励起することと、
前記材料の事前設定の空間領域におけるメッシュの各点で、前記材料のバンドギャップの幅以上の幅の周波数バンドにおいて、可変偏光角で前記ルミネッセンス信号を検出することと、
前記材料の前記事前設定の空間領域における前記メッシュの各点で、前記メッシュの前記点について検出された前記信号から、前記偏光角に応じて、正弦波の和によりモデル化される前記ルミネッセンス信号の変調の特性のデータを推定することと、
前記事前設定の空間領域における前記メッシュの前記点のすべてにわたる前記特性データの表現を生成することと、
前記特性データの表現から、結晶の少なくとも1つの構造特性を分離することと、
を含むことを特徴とする方法。 - 請求項1に記載の方法であって、前記変調されたルミネッセンス信号のモデルは、式:
- 請求項1および2のいずれか1項に記載の方法であって、前記ルミネッセンス信号はカメラを用いて検出され、前記材料上の前記事前設定の空間領域のメッシュは、選択により、前記カメラのセンサにおける点に対応することを特徴とする方法。
- 請求項1から3のいずれか1項に記載の方法であって、前記材料を励起することは、前記材料に光ルミネッセンス信号を放出させるために光源を用いて前記材料を光励起することを含むことを特徴とする方法。
- 請求項1から3のいずれか1項に記載の方法であって、前記材料を励起することは、前記材料にエレクトロルミネッセンス信号を放出させるために、前記材料上に配置された複数の電極にわたって電源を用いて前記材料を電気的に励起することを含むことを特徴とする方法。
- 請求項1から3のいずれか1項に記載の方法であって、前記材料を励起することは、前記材料に熱ルミネッセンス信号を放出させるために熱源を用いて前記材料を加熱することを含むことを特徴とする方法。
- 多結晶半導体材料の結晶構造を解析するためのシステムであって、
前記材料にルミネッセンス信号を放出させるために前記材料を励起するように構成された、前記材料を励起するための手段と、
前記材料の事前設定の空間領域におけるメッシュの各点で、前記材料のバンドギャップの幅以上の幅の周波数バンドにおいて、可変偏光角で前記ルミネッセンス信号を検出するための手段と、
データ処理ユニットと、
を備えるシステムであって、前記データ処理ユニットは、
メモリ手段および入力/出力インターフェースモジュールに作動的に結合されたコンピュータプロセッサであって、前記メモリ手段が、前記メッシュの各点について検出された前記信号に対応するデータを記憶するように構成される、コンピュータプロセッサと、
解析器であって、前記コンピュータプロセッサによって実行され、
前記材料の前記事前設定の空間領域における前記メッシュの各点で、前記メッシュの前記点について検出された前記信号から、前記偏光角に応じて、正弦波の和によりモデル化される前記ルミネッセンス信号の変調の特性のデータを推定し、
前記事前設定の空間領域における前記メッシュの前記点のすべてにわたる前記特性データの表現を生成し、
前記特性データの表現から、少なくとも1つの構造特性を分離するように構成された解析器と
を備えることを特徴とするシステム。 - 請求項7に記載の解析システムであって、前記解析器は、式
- 請求項7および8のいずれか1項に記載の解析システムであって、前記検出手段はカメラを備え、前記材料上の前記事前設定の空間領域のメッシュは、選択により、前記カメラのセンサにおける点に対応することを特徴とする解析システム。
- 請求項7から9のいずれか1項に記載の解析システムであって、前記材料を励起するための手段は、前記材料に光ルミネッセンス信号を放出させるために光励起信号を放出するように構成された光源を備えることを特徴とする解析システム。
- 請求項7から9のいずれか1項に記載の解析システムであって、前記材料を励起するための手段は、前記材料にエレクトロルミネッセンス信号を放出させるために、前記材料上に配置された複数の電極にわたって電気信号を放出するように構成された電源を備えることを特徴とする解析システム。
- 請求項7から9のいずれか1項に記載の解析システムであって、前記材料を励起するための手段は、前記材料に熱ルミネッセンス信号を放出させるために前記材料を加熱するように構成された熱源を備えることを特徴とする解析システム。
- プロセッサに関連付けられたメモリにロード可能なコンピュータプログラムであって、前記プロセッサによる前記プログラムの実行の際、請求項1から6のいずれか1項に記載の方法のステップを実装するためのコード部分を含むことを特徴とするコンピュータプログラム。
- 請求項13に記載のコンピュータプログラムであって、
前記プログラムは、圧縮または符号化によって、表現するデータのセットを含むことを特徴とするコンピュータプログラム。 - 1つ以上のプログラムを表現するデータのセットを含む、コンピュータによって実行可能なプログラムを記憶するための非一時的媒体であって、前記1つ以上のプログラムは、メモリ手段および入力/出力インターフェースモジュールに作動的に結合された処理ユニットを備えるコンピュータによる前記1つ以上のプログラムの実行の際、請求項1から6のいずれか1項に記載の方法に従って前記コンピュータに推定を実行させ表現を生成させる、多結晶半導体材料の結晶構造を解析するための命令を含むことを特徴とする非一時的媒体。
- 多結晶半導体材料の結晶構造を解析するためのデータ処理ユニットであって、
メモリ手段および入力/出力インターフェースモジュールに作動的に結合されたコンピュータプロセッサであって、前記メモリ手段が、励起された前記材料から放出されたルミネッセンス信号に対応するデータを記憶するように構成され、前記ルミネッセンス信号が、前記材料の事前設定の空間領域におけるメッシュの各点ごとに、前記材料のバンドギャップの幅以上の幅の周波数バンドにおいて可変偏光角で検出される、コンピュータプロセッサと、
解析器であって、前記コンピュータプロセッサによって実行され、
前記材料の前記事前設定の空間領域における前記メッシュの各点で、前記メッシュの前記点について検出された前記信号から、前記偏光角に応じて、正弦波の和によりモデル化される前記ルミネッセンス信号の変調の特性のデータを推定し、
前記事前設定の空間領域における前記メッシュの前記点のすべてにわたる前記特性データの表現を生成し、前記表現が前記材料の構造特性を分離し、
前記特性データの表現から、少なくとも1つの構造特性を分離するように構成された解析器と、
を備える、ことを特徴とするデータ処理ユニット。
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PCT/EP2013/066043 WO2014020046A1 (fr) | 2012-08-02 | 2013-07-30 | Procédé d'analyse de la structure cristalline d'un matériau semi-conducteur poly-cristallin |
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US9685906B2 (en) | 2013-07-03 | 2017-06-20 | Semilab SDI LLC | Photoluminescence mapping of passivation defects for silicon photovoltaics |
US10883941B2 (en) | 2015-05-04 | 2021-01-05 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Micro photoluminescence imaging |
US10018565B2 (en) * | 2015-05-04 | 2018-07-10 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Micro photoluminescence imaging with optical filtering |
US10012593B2 (en) * | 2015-05-04 | 2018-07-03 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Micro photoluminescence imaging |
JP6524794B2 (ja) * | 2015-05-21 | 2019-06-05 | 日本電気株式会社 | 物体同定装置、物体同定システム、物体同定方法および物体同定プログラム |
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CN107091822B (zh) * | 2017-03-14 | 2019-09-10 | 华东师范大学 | 双光源激发光致发光检测半导体缺陷的装置及其检测方法 |
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US20070000434A1 (en) * | 2005-06-30 | 2007-01-04 | Accent Optical Technologies, Inc. | Apparatuses and methods for detecting defects in semiconductor workpieces |
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KR20150043346A (ko) | 2015-04-22 |
EP2880426B1 (fr) | 2020-05-27 |
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US10302574B2 (en) | 2019-05-28 |
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