JP6271844B2 - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 45
- 239000012535 impurity Substances 0.000 claims description 172
- 238000002161 passivation Methods 0.000 claims description 147
- 239000004065 semiconductor Substances 0.000 claims description 120
- 239000000758 substrate Substances 0.000 claims description 119
- 238000000034 method Methods 0.000 claims description 88
- 230000005684 electric field Effects 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 13
- 229910052797 bismuth Inorganic materials 0.000 claims description 12
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 5
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 201
- 239000010408 film Substances 0.000 description 175
- 230000008569 process Effects 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910021478 group 5 element Inorganic materials 0.000 description 7
- 238000005215 recombination Methods 0.000 description 7
- 230000006798 recombination Effects 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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Description
n型半導体基板を準備し、熱拡散法によって、p型不純物であるホウ素をドーピングして半導体基板の前面にエミッタ層を形成し、n型不純物である燐(P)をドーピングして半導体基板の後面に後面電界層を形成した。半導体基板の前面に、アルミニウム酸化物を含む前面パッシベーション膜及びシリコン窒化物を含む反射防止膜を形成し、半導体基板の後面に、シリコン酸化物及びシリコン窒化物を含む後面パッシベーション膜を形成した。そして、半導体基板の前面にレーザーを照射して前面パッシベーション膜を選択的に加熱して、アルミニウムを拡散させてエミッタ層の第1部分を形成した。そして、半導体基板の後面に第2電極用ペーストをスクリーン印刷法により形成し、半導体基板の前面に第1電極用ペーストをスクリーン印刷法により形成した後、焼成して第1電極及び第2電極を形成した。そして、アイソレーション工程を行った。
エミッタ層の第1部分を形成する方法を除いては、実施例(実験例)と同様の方法で太陽電池を製造した。すなわち、比較例では、前面パッシベーション膜がシリコン酸化物を含む。反射防止膜を形成した後に、反射防止膜上に、エミッタ層の第1部分に対応するようにアルミニウムを含む別途のドーピング用の層を形成し、別途のドーピング用の層にレーザーを照射してアルミニウムを拡散させてエミッタ層の第1部分を形成した後、別途のドーピング用の層を除去した。他の工程は実施例(実験例)と同一であった。
10 半導体基板
20 エミッタ層
21 第1パッシベーション膜
22 反射防止膜
30 後面電界層
32 第2パッシベーション膜
Claims (18)
- 半導体基板と、
前記半導体基板に形成され、同一の導電型を有する第1不純物及び第2不純物を含んで第1抵抗を有する第1部分と、前記第2不純物を含んで前記第1抵抗より大きい第2抵抗を有する第2部分とを有するエミッタ層と、
前記エミッタ層上に形成され、前記第1不純物を含むパッシベーション膜と、
前記パッシベーション膜を貫通して前記第1部分に電気的に接続される電極と、を含み、
前記第1部分の厚さは前記第2部分の厚さより厚く、
前記第1不純物と前記第2不純物は互いに異なる、太陽電池。 - 前記第1不純物がアルミニウムを含み、
前記パッシベーション膜がアルミニウム酸化物を含む、請求項1に記載の太陽電池。 - 前記第1不純物がビスマスを含み、
前記パッシベーション膜がビスマス酸化物を含む、請求項1に記載の太陽電池。 - 前記第1部分において前記第1不純物の表面濃度が5×1020〜5×1021個/cm3である、請求項1に記載の太陽電池。
- 第1導電型の半導体基板を準備するステップと、
前記半導体基板の前面に前記第1導電型と異なる第2導電型の第2不純物をドープすることにより、不純物形成層を形成するステップと、
前記不純物形成層の上に前記第2導電型の第1不純物を含むパッシベーション膜を形成するステップと、
前記半導体基板の内部に前記第1不純物が拡散するように前記パッシベーション膜を局部的にレーザー加熱して、エミッタ層を形成するステップと、
前記エミッタ層に電気的に接続する電極を形成するステップと、を含み、
前記エミッタ層は、前記第1不純物と前記第2不純物を含む第1部分と、前記第2不純物を含む第2部分とを含む選択的エミッタ層であり、
前記電極は、前記エミッタ層の前記第1部分に電気的に接続し、
前記第1部分は前記第2部分より深く、
前記第1不純物と前記第2不純物は異なる、太陽電池の製造方法。 - 前記エミッタ層を形成するステップでは、前記電極が形成される第1部分に対応する前記パッシベーション膜の部分が加熱される、請求項5に記載の太陽電池の製造方法。
- 前記エミッタ層を形成するステップでは、前記第1部分に対応する前記パッシベーション膜にレーザーを照射する、請求項6に記載の太陽電池の製造方法。
- 前記エミッタ層を形成するステップでは、前記第1部分に対応する前記パッシベーション膜の部分が1200〜1600℃の温度に加熱される、請求項6に記載の太陽電池の製造方法。
- 前記エミッタ層を形成するステップでは、前記レーザーによって、前記第1部分に対応する前記パッシベーション膜の部分に開口部が形成される、請求項7に記載の太陽電池の製造方法。
- 前記エミッタ層を形成するステップでは、前記第1部分が前記第2部分より低い抵抗を有するように、前記エミッタ層の前記第1部分に対応する前記パッシベーション膜の部分は加熱され、前記エミッタ層の前記第1部分に対応する前記パッシベーション膜の部分の前記第1不純物を前記半導体基板の内部に拡散させる、請求項5に記載の太陽電池の製造方法。
- 前記第1不純物がアルミニウムを含み、
前記第2不純物がホウ素を含み、
前記パッシベーション膜がアルミニウム酸化物を含む、請求項5に記載の太陽電池の製造方法。 - 前記第1不純物がビスマスを含み、
前記第2不純物が燐を含み、
前記パッシベーション膜がビスマス酸化物を含む、請求項5に記載の太陽電池の製造方法。 - 前記第1部分において前記第1不純物の濃度が前記第2不純物の濃度より高い、請求項5に記載の太陽電池の製造方法。
- 前記不純物形成層を形成するステップにおいて、前記不純物形成層は熱拡散法またはイオン注入法により形成される、請求項5に記載の太陽電池の製造方法。
- 前記第1不純物がp導電型であり、
前記第1不純物がアルミニウムを含み、
前記パッシベーション膜がアルミニウム酸化物を含む、請求項5に記載の太陽電池の製造方法。 - 前記第1不純物がn導電型であり、
前記第1不純物がビスマスを含み、
前記パッシベーション膜がビスマス酸化物を含む、請求項5に記載の太陽電池の製造方法。 - 前記パッシベーション膜の厚さが5〜20nmである、請求項5に記載の太陽電池の製造方法。
- 前記半導体基板の他の一面に第3不純物を含む後面パッシベーション膜を形成するステップと、
前記半導体基板の内部に前記第3不純物が拡散するように前記後面パッシベーション膜を加熱して、後面電界層を形成するステップと、をさらに含む、請求項5に記載の太陽電池の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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KR1020120039830A KR101929445B1 (ko) | 2012-04-17 | 2012-04-17 | 태양 전지 및 이의 제조 방법 |
KR1020120039832A KR101929444B1 (ko) | 2012-04-17 | 2012-04-17 | 태양 전지 및 이의 제조 방법 |
KR10-2012-0039832 | 2012-04-17 | ||
KR10-2012-0039830 | 2012-04-17 |
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JP2013222961A JP2013222961A (ja) | 2013-10-28 |
JP6271844B2 true JP6271844B2 (ja) | 2018-01-31 |
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US (2) | US9312420B2 (ja) |
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