JP6267297B1 - 焼結体、スパッタリングターゲット及びその製造方法 - Google Patents

焼結体、スパッタリングターゲット及びその製造方法 Download PDF

Info

Publication number: JP6267297B1
Authority: JP; Japan
Prior art keywords: sputtering target; sintered body; bulk resistivity; thickness direction; depth position
Prior art date: 2016-08-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2016167135A

Other languages

English (en)

Japanese (ja)

Other versions

JP2018035013A (ja

Inventor

崇掛野

純梶山

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

JX Nippon Mining and Metals Corp

Original Assignee

JX Nippon Mining and Metals Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2016-08-29

Filing date

2016-08-29

Publication date

2018-01-24

2016-08-29 Application filed by JX Nippon Mining and Metals Corp filed Critical JX Nippon Mining and Metals Corp

2016-08-29 Priority to JP2016167135A priority Critical patent/JP6267297B1/ja

2017-08-24 Priority to CN201710734442.2A priority patent/CN107779821B/zh

2017-08-25 Priority to KR1020170107874A priority patent/KR101921827B1/ko

2017-08-28 Priority to TW106129196A priority patent/TWI649293B/zh

2018-01-24 Application granted granted Critical

2018-01-24 Publication of JP6267297B1 publication Critical patent/JP6267297B1/ja

2018-03-08 Publication of JP2018035013A publication Critical patent/JP2018035013A/ja

Status Active legal-status Critical Current

2036-08-29 Anticipated expiration legal-status Critical

Links

238000005477 sputtering target Methods 0.000 title claims abstract description 61
238000004519 manufacturing process Methods 0.000 title claims abstract description 21
229910052760 oxygen Inorganic materials 0.000 claims abstract description 20
238000000034 method Methods 0.000 claims abstract description 14
229910052725 zinc Inorganic materials 0.000 claims abstract description 14
229910052738 indium Inorganic materials 0.000 claims abstract description 12
239000011701 zinc Substances 0.000 claims description 35
238000005245 sintering Methods 0.000 claims description 19
239000012298 atmosphere Substances 0.000 claims description 18
239000000843 powder Substances 0.000 claims description 12
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
238000010438 heat treatment Methods 0.000 claims description 11
239000001301 oxygen Substances 0.000 claims description 11
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
239000012299 nitrogen atmosphere Substances 0.000 claims description 6
229910003437 indium oxide Inorganic materials 0.000 claims description 5
PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
239000002994 raw material Substances 0.000 claims description 5
239000012300 argon atmosphere Substances 0.000 claims description 4
238000002156 mixing Methods 0.000 claims description 2
238000000465 moulding Methods 0.000 claims description 2
239000010408 film Substances 0.000 description 24
238000000227 grinding Methods 0.000 description 21
239000013078 crystal Substances 0.000 description 11
230000007423 decrease Effects 0.000 description 10
238000005498 polishing Methods 0.000 description 8
238000004544 sputter deposition Methods 0.000 description 8
230000015572 biosynthetic process Effects 0.000 description 6
206010021143 Hypoxia Diseases 0.000 description 5
238000001816 cooling Methods 0.000 description 5
230000003247 decreasing effect Effects 0.000 description 5
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
230000000052 comparative effect Effects 0.000 description 3
239000000463 material Substances 0.000 description 3
238000005259 measurement Methods 0.000 description 3
239000000203 mixture Substances 0.000 description 3
229910052757 nitrogen Inorganic materials 0.000 description 3
238000007088 Archimedes method Methods 0.000 description 2
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
239000006185 dispersion Substances 0.000 description 2
238000005401 electroluminescence Methods 0.000 description 2
230000001771 impaired effect Effects 0.000 description 2
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
230000000630 rising effect Effects 0.000 description 2
238000001878 scanning electron micrograph Methods 0.000 description 2
239000010409 thin film Substances 0.000 description 2
229910052718 tin Inorganic materials 0.000 description 2
239000011787 zinc oxide Substances 0.000 description 2
240000004282 Grewia occidentalis Species 0.000 description 1
238000002441 X-ray diffraction Methods 0.000 description 1
229910007570 Zn-Al Inorganic materials 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
239000011230 binding agent Substances 0.000 description 1
-1 but IZO (InZO Substances 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
230000002596 correlated effect Effects 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
239000011521 glass Substances 0.000 description 1
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
229940110676 inzo Drugs 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
229910052745 lead Inorganic materials 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
239000002905 metal composite material Substances 0.000 description 1
239000011812 mixed powder Substances 0.000 description 1
QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
239000002245 particle Substances 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
239000000523 sample Substances 0.000 description 1
238000007790 scraping Methods 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000000126 substance Substances 0.000 description 1
239000000758 substrate Substances 0.000 description 1
YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
229910052726 zirconium Inorganic materials 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Organic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Ceramic Engineering (AREA)
Manufacturing & Machinery (AREA)
Structural Engineering (AREA)
Physical Vapour Deposition (AREA)
Compositions Of Oxide Ceramics (AREA)

JP2016167135A 2016-08-29 2016-08-29 焼結体、スパッタリングターゲット及びその製造方法 Active JP6267297B1 (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP2016167135A JP6267297B1 (ja)	2016-08-29	2016-08-29	焼結体、スパッタリングターゲット及びその製造方法
CN201710734442.2A CN107779821B (zh)	2016-08-29	2017-08-24	烧结体、溅射靶及其制造方法
KR1020170107874A KR101921827B1 (ko)	2016-08-29	2017-08-25	소결체, 스퍼터링 타깃 및 그 제조 방법
TW106129196A TWI649293B (zh)	2016-08-29	2017-08-28	Sintered body, sputtering target and manufacturing method thereof

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2016167135A JP6267297B1 (ja)	2016-08-29	2016-08-29	焼結体、スパッタリングターゲット及びその製造方法

Related Child Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2017245322A Division JP6453990B2 (ja)	2017-12-21	2017-12-21	焼結体、スパッタリングターゲット及びその製造方法

Publications (2)

Publication Number	Publication Date
JP6267297B1 true JP6267297B1 (ja)	2018-01-24
JP2018035013A JP2018035013A (ja)	2018-03-08

Family

ID=61020963

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2016167135A Active JP6267297B1 (ja)	2016-08-29	2016-08-29	焼結体、スパッタリングターゲット及びその製造方法

Country Status (4)

Country	Link
JP (1)	JP6267297B1 (zh)
KR (1)	KR101921827B1 (zh)
CN (1)	CN107779821B (zh)
TW (1)	TWI649293B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN109072417B (zh) *	2017-03-31	2020-06-16	Ｊｘ金属株式会社	溅镀靶及其制造方法
JP6724057B2 (ja) *	2018-03-30	2020-07-15	Ｊｘ金属株式会社	スパッタリングターゲット部材
JP2020143359A (ja) *	2019-03-08	2020-09-10	Ｊｘ金属株式会社	スパッタリングターゲット部材の製造方法及びスパッタリングターゲット部材

Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH10297962A (ja) *	1997-04-28	1998-11-10	Sumitomo Metal Mining Co Ltd	スパッタリングターゲット用ＺｎＯ−Ｇａ２Ｏ３系焼結体およびその製造方法
JPH11302835A (ja) *	1998-04-21	1999-11-02	Sumitomo Metal Mining Co Ltd	ＺｎＯ系焼結体の製造方法
WO2008078486A1 (ja) *	2006-12-25	2008-07-03	Idemitsu Kosan Co., Ltd.	透明導電膜の製造方法
WO2010125801A1 (ja) *	2009-05-01	2010-11-04	株式会社アルバック	ＺｎＯ-Ｇａ２Ｏ３系スパッタリングターゲット用焼結体及びその製造方法
JP2011068993A (ja) *	1999-11-25	2011-04-07	Idemitsu Kosan Co Ltd	スパッタリングターゲット、透明導電性酸化物、およびスパッタリングターゲットの製造方法
JP2015021165A (ja) *	2013-07-19	2015-02-02	三菱マテリアル株式会社	スパッタリングターゲット及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100603128B1 (ko) *	1999-05-10	2006-07-20	닛코킨조쿠 가부시키가이샤	스퍼터링 타겟트
JP5096250B2 (ja) *	2008-07-18	2012-12-12	出光興産株式会社	酸化物焼結体の製造方法、酸化物焼結体、スパッタリングタ−ゲット、酸化物薄膜、薄膜トランジスタの製造方法及び半導体装置
WO2014112368A1 (ja) *	2013-01-15	2014-07-24	出光興産株式会社	スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法

2016
- 2016-08-29 JP JP2016167135A patent/JP6267297B1/ja active Active
2017
- 2017-08-24 CN CN201710734442.2A patent/CN107779821B/zh active Active
- 2017-08-25 KR KR1020170107874A patent/KR101921827B1/ko active IP Right Grant
- 2017-08-28 TW TW106129196A patent/TWI649293B/zh active

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH10297962A (ja) *	1997-04-28	1998-11-10	Sumitomo Metal Mining Co Ltd	スパッタリングターゲット用ＺｎＯ−Ｇａ２Ｏ３系焼結体およびその製造方法
JPH11302835A (ja) *	1998-04-21	1999-11-02	Sumitomo Metal Mining Co Ltd	ＺｎＯ系焼結体の製造方法
JP2011068993A (ja) *	1999-11-25	2011-04-07	Idemitsu Kosan Co Ltd	スパッタリングターゲット、透明導電性酸化物、およびスパッタリングターゲットの製造方法
WO2008078486A1 (ja) *	2006-12-25	2008-07-03	Idemitsu Kosan Co., Ltd.	透明導電膜の製造方法
WO2010125801A1 (ja) *	2009-05-01	2010-11-04	株式会社アルバック	ＺｎＯ-Ｇａ２Ｏ３系スパッタリングターゲット用焼結体及びその製造方法
JP2015021165A (ja) *	2013-07-19	2015-02-02	三菱マテリアル株式会社	スパッタリングターゲット及びその製造方法

Also Published As

Publication number	Publication date
CN107779821B (zh)	2020-12-18
TWI649293B (zh)	2019-02-01
KR101921827B1 (ko)	2019-02-13
JP2018035013A (ja)	2018-03-08
TW201806909A (zh)	2018-03-01
CN107779821A (zh)	2018-03-09
KR20180025225A (ko)	2018-03-08

Legal Events

Date	Code	Title	Description
2017-11-10	TRDD	Decision of grant or rejection written
2017-11-21	A01	Written decision to grant a patent or to grant a registration (utility model)	Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171121
2018-01-05	R150	Certificate of patent or registration of utility model	Ref document number: 6267297 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150
2020-11-26	S531	Written request for registration of change of domicile	Free format text: JAPANESE INTERMEDIATE CODE: R313531
2020-12-07	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2020-12-10	R350	Written notification of registration of transfer	Free format text: JAPANESE INTERMEDIATE CODE: R350
2021-12-06	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2023-12-06	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250

Publication	Publication Date	Title
JP4850378B2 (ja)	2012-01-11	スパッタリングターゲット、透明導電性酸化物、およびスパッタリングターゲットの製造方法
JP5349587B2 (ja)	2013-11-20	酸化インジウム焼結体、酸化インジウム透明導電膜及び該透明導電膜の製造方法
TW201504188A (zh)	2015-02-01	複合氧化物燒結體、非晶質複合氧化膜之製造方法、非晶質複合氧化膜、結晶質複合氧化膜之製造方法及結晶質複合氧化膜
KR20140041950A (ko)	2014-04-04	아모르퍼스 복합 산화막, 결정질 복합 산화막, 아모르퍼스 복합 산화막의 제조 방법, 결정질 복합 산화막의 제조 방법 및 복합 산화물 소결체
JP6267297B1 (ja)	2018-01-24	焼結体、スパッタリングターゲット及びその製造方法
JP6453990B2 (ja)	2019-01-16	焼結体、スパッタリングターゲット及びその製造方法
JP6677058B2 (ja)	2020-04-08	Ｓｎ−Ｚｎ−Ｏ系酸化物焼結体とその製造方法
JP7086080B2 (ja)	2022-06-17	酸化物焼結体およびスパッタリングターゲット
JP5081960B2 (ja)	2012-11-28	酸化物焼結体及び酸化物半導体薄膜
JP6233233B2 (ja)	2017-11-22	スパッタリングターゲット及びその製造方法
JP6146773B2 (ja)	2017-06-14	酸化物焼結体及びその製造方法
JP7203088B2 (ja)	2023-01-12	酸化物焼結体、スパッタリングターゲットおよび透明導電膜
WO2014083909A1 (ja)	2014-06-05	酸化亜鉛系スパッタリングターゲットの製造方法
WO2013042747A1 (ja)	2013-03-28	酸化物焼結体およびその製造方法並びに酸化物透明導電膜
JP2010084177A (ja)	2010-04-15	酸化亜鉛系焼結ターゲットおよびその製造方法
JP5156181B2 (ja)	2013-03-06	酸化インジウム・酸化亜鉛焼結体の製造方法
JP6356290B2 (ja)	2018-07-11	酸化物焼結体及びその製造方法
TWI748971B (zh)	2021-12-11	Ｓｎ-Ｚｎ-Ｏ系氧化物燒結體及其製造方法
JP2017019668A (ja)	2017-01-26	酸化物焼結体およびスパッタリングターゲット、並びにそれらの製造方法
JP2017014534A (ja)	2017-01-19	スパッタリングターゲット及びその製造方法
JP2011093730A (ja)	2011-05-12	酸化物焼結体及びその製造方法
TW201213273A (en)	2012-04-01	Sintered oxide and oxide semiconductor thin film
JP2020164957A (ja)	2020-10-08	スパッタリングターゲットおよび、スパッタリングターゲットの製造方法