JP6257000B2 - 基板処理装置、半導体装置の製造方法および反応管 - Google Patents
基板処理装置、半導体装置の製造方法および反応管 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 193
- 238000006243 chemical reaction Methods 0.000 title claims description 85
- 239000000758 substrate Substances 0.000 title claims description 76
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000007789 gas Substances 0.000 claims description 440
- 238000000034 method Methods 0.000 claims description 30
- 238000009529 body temperature measurement Methods 0.000 claims description 12
- 238000000638 solvent extraction Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 54
- 230000008569 process Effects 0.000 description 20
- 239000010408 film Substances 0.000 description 18
- 238000003860 storage Methods 0.000 description 14
- 239000011261 inert gas Substances 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000003779 heat-resistant material Substances 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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Description
複数枚の基板を保持する基板保持部材と、
前記基板保持部材を収容し、前記基板を処理する反応管と、
前記反応管内に処理ガスを供給する処理ガス供給系と、
前記反応管内の雰囲気を排気する排気系と、を有し、
前記反応管は、上端に閉塞部を有し、下端に開口部を有する円筒部と、
前記円筒部の一側壁の外側に形成され、前記処理ガス供給系が接続されたガス供給エリアと、
前記ガス供給エリアと対向する前記円筒部の他側壁の外側に形成され、前記排気系が接続されたガス排気エリアと、を備え、
前記ガス供給エリアおよび前記ガス排気エリアは、その内部の空間を複数の空間に区画する内壁を備えるよう構成された半導体製造装置が提供される。
ガス排気エリア224と円筒部209との間の境界を構成する壁体である境界壁254には後述するガス排気スリット236が形成されている。境界壁254は円筒部209の一部であって、その外側面は、ガス排気エリア224に面する側面部分を構成する。
内壁248、250は、反応管203と同一材料で形成され、例えば、石英(SiO2)または炭化シリコン(SiC)等の耐熱性材料から形成されている。
ここでは、それぞれ2つの内壁を備え、3つの空間に区画されている。
このような構成により、ガス供給エリア222内で処理ガスが混ざり合って薄膜が形成されたり、副生成物が生成されたりすることを抑制することができる。
好適には、内壁248は、ガス供給エリア222を下端から上端に至るまで区画し、それぞれ隔離した3つの空間を形成するように、設けると良い。
好適には、内壁250は、ガス排気エリア224を下端側から上端に至るまで区画し、それぞれ隔離した3つの空間を形成するように、設けると良い。
好適には、ガス供給エリア222およびガス排気エリア224の外壁の外径は、同一寸法とすると、ヒータ207との間のデッドスペースを少なくすることができる等のメリットがある。
また、好適には、ガス供給エリア222とガス排気エリア224それぞれのガスの流路断面積は同じ面積とする。また、好適には、ガス供給エリア222内の各空間のガスの流路断面積と、ガス供給エリア222内の各空間に対面するガス排気エリア224内の各空間のガスの流路断面積を同じ面積とする。
言い換えれば、バッファ領域258の分だけガス供給エリア222の容積はガス排気エリア224の容積よりも大きくなっているように構成されている。なお、本実施形態ではガス排気エリア224の上端の高さをガス供給エリア222の上端よりも低く構成しているが、ガス排気エリア224が容積のサイズによる排気バランスへの影響や副生成物の付着具合への影響等が問題ない場合には、同じ高さに構成しても良い。
ガス排気エリア224の内壁250で区画された各空間を流通したガスは、排気口230の手前の1つの空間にて合流し、排気口230から排気されるようになっている。このような構成とすることにより、
好適には、ガス排気スリット236の円筒部209周方向の長さはガス排気エリア224内の各空間の周方向の長さと同じにするとガス排気効率が向上するので良い。また、好適には、ガス排気スリット236は、内壁250と境界壁254との連結部分を除いて横長に、縦複数段に形成するとガス排気効率が向上するので良い。また、好適には、ガス排気スリット236の列数は区画された空間と同じ数に形成されると良い。本実施形態では、3つの空間が形成されているため、ガス排気スリット236は3列形成されている。
好適には、ボート217に載置可能な最下段のウエハ200とその上側に隣り合うウエハ200との間から、最上段のウエハ200とその上側に隣り合うボート217の天板との間に至るまで、各ウエハ200間、ウエハ200と天板間に対し1段ずつ対向するように形成されると良い。
好適には、各ガス供給スリット235と各ガス排気スリット236とは同じ高さ、同じ数に形成されると良い。例えば、ウエハ200が25枚載置されるときは、ガス供給スリット235とガス排気スリット234は25段形成されると良い。
好適には、L1は1mm〜9mm程度の範囲内とすると良く、さらに好適には3〜7mm程度の範囲内とすると良い。また、L2は6〜14mm程度の範囲内とすると良く、さらに好適には8〜12mm程度の範囲内とすると良い。
ウエハ200の温度:100〜600℃
処理室内圧力:1〜3000Pa
HCDSガス供給流量:1〜2000sccm
NH3ガス供給流量:100〜10000sccm
N2ガス供給流量:10〜10000sccm
SiN膜の膜厚:0.2〜10nm
本実施形態によれば、以下に示す1つ又は複数の効果が得られる。
基板間に十分な量の処理ガスを供給でき、処理ガスの置換効率を向上させることが可能となる。
以下、本発明の好ましい態様について付記する。
複数枚の基板を保持する基板保持部材と、
前記基板保持部材を収容し、前記基板を処理する反応管と、
前記反応管内に処理ガスを供給する処理ガス供給系と、
前記反応管内の雰囲気を排気する排気系と、を有し、
前記反応管は、上端に閉塞部を有し、下端に開口部を有する円筒部と、
前記円筒部の一側壁の外側に形成され、前記処理ガス供給系が接続されたガス供給エリアと、
前記ガス供給エリアと対向する前記円筒部の他側壁の外側に形成され、前記排気系が接続されたガス排気エリアと、を備え、
前記ガス供給エリアおよび前記ガス排気エリアは、その内部の空間を複数の空間に区画する内壁を備えるよう構成された基板処理装置が提供される。
付記1に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアと前記円筒部との境界壁に前記処理ガスを前記円筒部内に供給するガス供給スリットが形成される。
付記1または2に記載の基板処理装置であって、好ましくは、
前記ガス排気エリアと前記円筒部との境界壁に前記円筒部内の雰囲気を排気するガス排気スリットが形成される。
付記3に記載の基板処理装置であって、好ましくは、
前記ガス供給スリットおよび前記ガス排気スリットは、前記複数の空間それぞれに対向した位置に、上下方向に複数に形成されている。
付記3または4に記載の基板処理装置であって、好ましくは、前記ガス供給スリットおよび前記ガス排気スリットは前記円筒部の周方向に長くに形成され、その両端部が曲面状に形成されている。
付記1乃至5に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアの横断面積と前記ガス排気エリアの横断面積とは同じである。
付記1乃至6に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアと前記ガス排気エリアとは同じ数だけ内壁を有し、同じ空間数に区画される。
付記6または付記7に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアの各空間の横断面積と前記ガス供給エリアの各空間に対面する前記ガス排気エリアの各空間の横断面積とは同じ面積である。
付記1乃至8に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアの容積の方が前記ガス排気エリアの容積より大きい。
付記9に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアの内壁の長さの方が前記ガス排気エリアの内壁の長さよりも長い。
付記1乃至10に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアと前記円筒部との境界壁の下端に開口部が形成されている。
付記11に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアの内壁の長さは、前記円筒部の長さよりも短く、かつ、前記ガス供給エリアと前記円筒部との前記境界壁の長さよりも長い。
付記1乃至12に記載の基板処理装置であって、好ましくは、
前記ガス供給スリットの縦の長さは、前記基板間の間隔よりも短い。
付記4乃至13に記載の基板処理装置であって、好ましくは、
前記ガス供給スリットおよび前記ガス排気スリットの段数は前記基板の枚数と同数である。
付記4乃至付記14に記載の基板処理装置であって、好ましくは、
前記ガス供給スリットおよび前記ガス排気スリットの列数は、前記ガス供給エリアの前記空間数および前記ガス排気エリアの前記空間数と同数である。
付記15に記載の基板処理装置であって、好ましくは、
前記ガス供給スリットおよび前記ガス排気スリットの横の長さは、前記ガス供給エリアの前記空間および前記ガス排気エリアの前記空間の横の長さと同じである。
付記1に記載の基板処理装置であって、好ましくは、
前記ガス排気エリアに隣接して前記反応管内の温度を測定する温度センサが内部に設置された温度測定エリアが形成されている。
本発明の別の一態様によれば、
上端に閉塞部を有し、下端に開口部を有する円筒部と、前記円筒部の一側壁の外側に形成されたガス供給エリアと、前記ガス供給エリアと対向する前記円筒部の他側壁の外側に形成されたガス排気エリアとで構成された反応管の円筒部内に基板を搬送する工程と、
その内部の空間を複数の空間に区画する内壁を備えたガス供給エリアから前記円筒部内に処理ガスを供給する工程と、
その内部の空間を複数の空間に区画する内壁を備えたガス排気エリアから前記円筒部内の雰囲気を排気する工程と、を有する半導体装置の製造方法および基板処理方法が提供される。
本発明のさらに他の一態様によれば、
上端に閉塞部を有し、下端に開口部を有する円筒部と、前記円筒部の一側壁の外側に形成されたガス供給エリアと、前記ガス供給エリアと対向する前記円筒部の他側壁の外側に形成されたガス排気エリアとで構成された反応管の円筒部内に基板を搬送する手順と、
その内部の空間を複数の空間に区画する内壁を備えたガス供給エリアから前記円筒部内に処理ガスを供給する手順と、
その内部の空間を複数の空間に区画する内壁を備えたガス排気エリアから前記円筒部内の雰囲気を排気する手順と、
をコンピュータに実行させるプログラム、または、該プログラムを記録したコンピュータ読み取り可能な記録媒体が提供される。
本発明のさらに他の一態様によれば、
上端に閉塞部を有し、下端に開口部を有する円筒部と、
前記円筒部の一側壁の外側に形成されたガス供給エリアと、
前記ガス供給エリアの対向する前記円筒部の他側壁の外側に形成されたガス排気エリアと、を有し
前記ガス供給エリアおよび前記ガス排気エリアは、その内部の空間を複数の空間に区画する内壁を備えるよう構成される反応管が提供される。
200 ウエハ
201 処理室
202 処理炉
203 反応管
207 ヒータ
222 ガス供給エリア
224 ガス排気エリア
231 排気管
310a〜310f ガス供給管
Claims (14)
- 複数枚の基板を保持する基板保持部材と、
前記基板保持部材を収容し、前記基板を処理する反応管と、
前記反応管内に少なくとも2種類の処理ガスを供給する処理ガス供給系と、
前記反応管内の雰囲気を排気する排気系と、を有し、
前記反応管は、上端に閉塞部を有し、下端に開口部を有する円筒部と、前記円筒部の一側壁の外側に形成され、前記処理ガス供給系が接続されたガス供給エリアと、前記ガス供給エリアと対向する前記円筒部の他側壁の外側に形成され、前記排気系が接続されたガス排気エリアと、を備え、
前記ガス供給エリアと前記円筒部内との境界壁は、前記円筒部の側壁の一部であって、前記処理ガスを前記円筒部内に供給する、周方向に長いガス供給スリットが、前記複数枚の基板に対応して上下方向に1列に形成され、
前記ガス供給エリアおよび前記ガス排気エリアは、その内部の空間を複数の空間に区画する内壁を備え、
前記内壁は、前記ガス供給エリアおよび前記ガス供給エリアのそれぞれの上端付近から下端付近まで伸びた板であり、それぞれの前記内部の空間を横方向に分割し、
前記ガス供給エリアの区画された前記空間の少なくとも2つには、前記2種類の処理ガスがそれぞれ供給さるよう構成された基板処理装置。 - 処理ガス供給系と接続され、前記ガス供給エリアの区画された前記空間の少なくとも1つに着脱可能に設けられた少なくとも1つのノズルを更に備え、
前記ガス供給エリアは下端部が開放されており、
前記ノズルは、前記ガス供給エリア内の下部から上部へ長さ方向に沿って設けられ、前記ノズルの側面には、前記反応管の中心を向くように開口しガスを供給するガス供給孔が設けられた請求項1記載の基板処理装置。 - 前記ガス排気エリアと前記円筒部との境界壁に前記円筒部内の雰囲気を排気する横長のガス排気スリットが形成され、前記ガス供給スリット及びガス排気スリットの横の長さは、前記ガス供給エリアおよび前記ガス排気エリアの前記空間の横の長さそれぞれと同じである請求項1又は2に記載の基板処理装置。
- 前記ノズルは、前記ガス供給エリアの区画された前記空間の少なくとも2つにそれぞれ設けられ、
前記ノズルの少なくとも1つは、前記ガス供給孔が、前記基板に対応して設けられた前記ガス供給スリットのそれぞれの開口の縦中央位置に形成されている請求項2記載の基板処理装置。 - 前記反応管の下端の開口部に接続されて前記反応管を支持するとともに、前記ノズルの支持部を有するマニホールドを更に備え、
ノズル支持部は、前記マニホールドを貫通するように設けられ、前記マニホールド外側の端は前記処理ガス供給と接続し、前記マニホールド内側の端は前記ノズルと接続して支持し、
前記ガス供給エリアの内壁の下端は、前記ノズル支持部の上端よりも下側になる請求項2又は4に記載の基板処理装置。 - 前記ガス供給エリアのガスの流路の、前記円筒部の軸に垂直な面での断面積と、前記ガス排気エリアのガスの流路の、前記軸に垂直な面での断面積とは、同じ面積で形成されている請求項1乃至5のいずれかに記載の基板処理装置。
- 複数枚の基板を保持する基板保持部材と、
前記基板保持部材を収容し、前記基板を処理する反応管と、
前記反応管内に処理ガスを供給する処理ガス供給系と、
前記反応管内の雰囲気を排気する排気系と、を有し、
前記反応管は、上端に閉塞部を有し、下端に開口部を有する円筒部と、
前記円筒部の一側壁の外側に形成され、前記処理ガス供給系が接続されたガス供給エリアと、
前記ガス供給エリアと対向する前記円筒部の他側壁の外側に形成され、前記排気系が接続されたガス排気エリアと、を備え、
前記ガス供給エリアおよび前記ガス排気エリアは、その内部の空間を複数の空間に区画する内壁を有し、
前記ガス供給エリアのガスの流路の、前記円筒部の軸に垂直な面での断面積と、前記ガス排気エリアのガスの流路の、前記軸に垂直な面での断面積とは、同じ面積で形成され、
前記ガス供給エリアと前記円筒部との境界壁の下端に、ノズルが挿入される下端開口部が形成されている基板処理装置。 - 前記ガス供給エリアの内壁の縦の長さは、前記円筒部の縦の長さよりも短く、かつ、前記ガス供給エリアと前記円筒部との前記境界壁の縦の長さよりも長い請求項7記載の基板処理装置。
- 前記ガス供給エリアの内壁の縦の長さの方が前記ガス排気エリアの内壁の縦の長さよりも長い請求項8記載の基板処理装置。
- 上端に閉塞部を有し、下端に開口部を有する円筒部と、前記円筒部の一側壁の外側に、下端を開放させ上端を閉塞させて形成されたガス供給エリアと、前記ガス供給エリアと対向する前記円筒部の他側壁の外側に、下端と上端を閉塞させて形成されたガス排気エリアとで構成された反応管の円筒部内に基板を搬送する工程と、
前記ガス供給エリアの上端付近から下端付近まで伸びてその内部の空間を横方向に分割して複数の空間に区画する内壁を備えたガス供給エリアから、前記円筒部の側壁の一部である前記ガス供給エリアと前記円筒部内との境界壁に前記複数枚の基板それぞれに対して設けられた周方向に長いガス供給スリットを通じて、前記円筒部内に処理ガスを供給する工程と、
その内部の空間を横方向に分割して複数の空間に区画する内壁を備えたガス排気エリアから前記円筒部内の雰囲気を排気する工程と、を有し、
前記供給する工程では、前記ガス供給エリアの区画された前記空間の少なくとも2つから、異なる2種類の処理ガスが交互に供給される半導体装置の製造方法。 - 上端に閉塞部を有し、下端に開口部を有する円筒部と、
前記円筒部の一側壁の外側に、下端を開放させ上端を閉塞させて形成されたガス供給エリアと、
前記ガス供給エリアの対向する前記円筒部の他側壁の外側に、下端と上端を閉塞させて形成されたガス排気エリアと、を有し、
前記ガス供給エリアと前記円筒部内との境界壁は、前記円筒部の側壁の一部であって、前記処理ガスを前記円筒部内に供給する、周方向に長いガス供給スリットが、前記複数枚の基板に対応して上下方向に少なくとも1例形成され、
前記ガス供給エリアおよび前記ガス排気エリアは、その内部の空間を横方向に分割し複数の空間に区画する内壁を備え、
前記内壁は、前記ガス供給エリアおよび前記ガス供給エリアのそれぞれの上端付近から下端付近まで伸びた平板であり、その縦の長さは、前記円筒部の縦の長さよりも短く、かつ、前記ガス供給エリアと前記円筒部との前記境界壁の縦の長さよりも長く形成され、前記ガス供給エリアの区画された前記空間の少なくとも2つから、2種類の処理ガスが前記ガス供給エリア内で混ざることを抑制しつつ前記円筒部内へそれぞれ供給されるよう構成される反応管。 - 前記ガス供給エリアと前記円筒部との境界壁の下端に、下端開口部が形成され、
前記下端開口部から前記ガス供給エリアの区画された前記空間へノズルを挿入し、ノズル支持部によって固定できるように構成された請求項11記載の反応管。 - 前記ガス供給エリアおよび前記ガス排気エリアの外壁は、前記円筒部の外径よりも大きな外形で、前記円筒部と同心円状に形成された請求項11又は12に記載の反応管。
- 前記反応管は、前記ガス排気エリアの両端に形成され、温度センサを収納する温度測定エリアを更に備え、
前記温度測定エリアは、下端部と上端部とが平坦に閉塞された有天井の形状で構成され、前記円筒部と同心円状に形成された外壁を有し、前記ガス排気エリアと内壁を介して連続して形成された請求項12又は13に記載の反応管。
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- 2014-09-30 SG SG11201702331YA patent/SG11201702331YA/en unknown
- 2014-09-30 US US15/513,027 patent/US10811271B2/en active Active
- 2014-09-30 KR KR1020187036811A patent/KR102123942B1/ko active IP Right Grant
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-
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Also Published As
Publication number | Publication date |
---|---|
TW201630070A (zh) | 2016-08-16 |
KR102268374B1 (ko) | 2021-06-23 |
SG11201702331YA (en) | 2017-04-27 |
KR102123942B1 (ko) | 2020-06-17 |
KR20200070430A (ko) | 2020-06-17 |
US10811271B2 (en) | 2020-10-20 |
TWI585853B (zh) | 2017-06-01 |
WO2015041376A1 (ja) | 2015-03-26 |
US10950457B2 (en) | 2021-03-16 |
US20210159083A1 (en) | 2021-05-27 |
KR20170042789A (ko) | 2017-04-19 |
US20190393045A1 (en) | 2019-12-26 |
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