JP6239312B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP6239312B2 JP6239312B2 JP2013170153A JP2013170153A JP6239312B2 JP 6239312 B2 JP6239312 B2 JP 6239312B2 JP 2013170153 A JP2013170153 A JP 2013170153A JP 2013170153 A JP2013170153 A JP 2013170153A JP 6239312 B2 JP6239312 B2 JP 6239312B2
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- 239000004065 semiconductor Substances 0.000 claims description 181
- 229910052751 metal Inorganic materials 0.000 claims description 114
- 239000002184 metal Substances 0.000 claims description 114
- 238000009792 diffusion process Methods 0.000 claims description 11
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 9
- 241001122767 Theaceae Species 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 611
- 238000000034 method Methods 0.000 description 32
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 26
- 239000000463 material Substances 0.000 description 26
- 239000000758 substrate Substances 0.000 description 23
- 229910052719 titanium Inorganic materials 0.000 description 22
- 229910052759 nickel Inorganic materials 0.000 description 21
- 229910052802 copper Inorganic materials 0.000 description 18
- 229910052804 chromium Inorganic materials 0.000 description 16
- 229910052697 platinum Inorganic materials 0.000 description 16
- 229910052721 tungsten Inorganic materials 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 239000011787 zinc oxide Substances 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- 229910052720 vanadium Inorganic materials 0.000 description 12
- 229910052725 zinc Inorganic materials 0.000 description 12
- 239000011701 zinc Substances 0.000 description 12
- 238000002955 isolation Methods 0.000 description 11
- 229910052750 molybdenum Inorganic materials 0.000 description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 10
- 229910017083 AlN Inorganic materials 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 229910010413 TiO 2 Inorganic materials 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 9
- 229960001296 zinc oxide Drugs 0.000 description 9
- -1 Indium-Aluminum-Zinc- Chemical compound 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 239000004417 polycarbonate Substances 0.000 description 6
- 229920000515 polycarbonate Polymers 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910002668 Pd-Cu Inorganic materials 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000071 blow moulding Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
11 第1導電型半導体層
12 活性層
13 第2導電型半導体層
15 オーミック接触層
17 反射層
30 チャンネル層
35 第1金属層
40 第1絶縁層
43 第2絶縁層
45 保護膜
50 第2金属層
53 第3金属層
60 第1ボンディング層
63 第2ボンディング層
70 第1伝導性支持部材
73 第2伝導性支持部材
80 第1電極
85 ラフネス
87 第2電極
90 第1連結部
Claims (19)
- 第1導電型半導体層、前記第1導電型半導体層の下にある活性層、前記活性層の下にある第2導電型半導体層を含む発光構造物と、
前記第1導電型半導体層の上に配置され、前記第1導電型半導体層に電気的に連結された第1電極と、
前記第2導電型半導体層に電気的に連結され、前記第2導電型半導体層の底面に連結された第2電極と、
前記発光構造物の下部の周りを囲むチャンネル層と、
前記第2電極の下に配置され、前記第2電極と電気的に連結された第1伝導性支持部材と、
前記第2電極の下に配置され、前記第1伝導性支持部材と電気的に絶縁された第2伝導性支持部材と、
前記第1電極と前記第2伝導性支持部材に電気的に連結された第1連結部と、
前記第2電極と前記第2伝導性支持部材との間に配置された第1絶縁層と、を含み、
前記第2伝導性支持部材は、前記第1伝導性支持部材を囲むように配置され、
前記第1絶縁層は、前記チャンネル層を囲むように配置され、
前記第1連結部は、前記第1導電型半導体層の側面に接触し、
前記第1連結部は、前記第1絶縁層を貫通して前記第2伝導性支持部材に電気的に連結されたことを特徴とする、発光素子。 - 前記チャンネル層の上部面は前記活性層の上部面に比べてより高く配置されたことを特徴とする、請求項1に記載の発光素子。
- 前記第1伝導性支持部材の下部面と前記第2伝導性支持部材の下部面が同一平面に配置されたことを特徴とする、請求項1または2に記載の発光素子。
- 前記チャンネル層が前記活性層の周りを囲むように配置されたことを特徴とする、請求項1乃至3のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層が前記第2導電型半導体層の周りを囲むように配置されたことを特徴とする、請求項1乃至4のうち、いずれか1項に記載の発光素子。
- 前記第2電極は前記第2導電型半導体層の下に配置された第1金属層を含み、前記第1金属層は前記第1伝導性支持部材と電気的に連結されたことを特徴とする、請求項1乃至5のうち、いずれか1項に記載の発光素子。
- 前記第2電極は、前記第2導電型半導体層の下に配置されたオーミック接触層と、前記オーミック接触層と前記第1金属層との間に配置された反射層をさらに含むことを特徴とする、請求項6に記載の発光素子。
- 前記チャンネル層の一端が、前記第2導電型半導体層と前記反射層との間に配置されたことを特徴とする、請求項7に記載の発光素子。
- 前記第1絶縁層は、前記第1金属層と前記第2伝導性支持部材との間に配置されたことを特徴とする、請求項6に記載の発光素子。
- 前記第1絶縁層の上部面は前記発光構造物の下部の周りに露出したことを特徴とする、請求項1乃至9のうち、いずれか1項に記載の発光素子。
- 前記発光構造物の上部面に配置されたラフネスを含むことを特徴とする、請求項1乃至10のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層の一端が前記第2導電型半導体層の下に配置されたことを特徴とする、請求項1乃至11のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層の一端が前記第2導電型半導体層の下部面に接触したことを特徴とする、請求項1乃至12のうち、いずれか1項に記載の発光素子。
- 前記第2電極の下に配置された拡散障壁層、ボンディング層を含むことを特徴とする、請求項1乃至13のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層は酸化物または窒化物を含むことを特徴とする、請求項1乃至14のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層の一端が前記第2導電型半導体層と前記第2電極との間に配置されたことを特徴とする、請求項1乃至15のうち、いずれか1項に記載の発光素子。
- 前記第1伝導性支持部材と前記第2伝導性支持部材は互いに離隔して配置されたことを特徴とする、請求項1乃至16のうち、いずれか1項に記載の発光素子。
- 前記第1伝導性支持部材と前記第2伝導性支持部材との間に配置された第2絶縁層を含むことを特徴とする、請求項1乃至17のうち、いずれか1項に記載の発光素子。
- 前記第2絶縁層は、前記第1伝導性支持部材を囲み、
前記第2伝導性支持部材は、前記第2絶縁層を囲むことを特徴とする、請求項18に記載の発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0091021 | 2012-08-21 | ||
KR1020120091021A KR101886156B1 (ko) | 2012-08-21 | 2012-08-21 | 발광소자 |
Publications (3)
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JP2014042026A JP2014042026A (ja) | 2014-03-06 |
JP2014042026A5 JP2014042026A5 (ja) | 2016-08-12 |
JP6239312B2 true JP6239312B2 (ja) | 2017-11-29 |
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JP2013170153A Active JP6239312B2 (ja) | 2012-08-21 | 2013-08-20 | 発光素子 |
Country Status (5)
Country | Link |
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US (1) | US8952416B2 (ja) |
EP (1) | EP2701216B1 (ja) |
JP (1) | JP6239312B2 (ja) |
KR (1) | KR101886156B1 (ja) |
CN (1) | CN103633221B (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101886156B1 (ko) * | 2012-08-21 | 2018-09-11 | 엘지이노텍 주식회사 | 발광소자 |
DE102013103079A1 (de) * | 2013-03-26 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
DE102013107531A1 (de) * | 2013-07-16 | 2015-01-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
JP2015056647A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 窒化物半導体発光装置 |
KR102163987B1 (ko) * | 2014-05-30 | 2020-10-12 | 엘지이노텍 주식회사 | 발광소자 |
KR102164087B1 (ko) * | 2014-06-10 | 2020-10-12 | 엘지이노텍 주식회사 | 발광소자 및 이를 구비한 발광소자 패키지 |
KR102237148B1 (ko) * | 2014-11-07 | 2021-04-07 | 엘지이노텍 주식회사 | 발광소자 제조방법 |
KR102441311B1 (ko) * | 2015-04-20 | 2022-09-08 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
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