JP6232124B2 - 相補型金属酸化膜半導体(cmos)超音波振動子およびその形成方法 - Google Patents
相補型金属酸化膜半導体(cmos)超音波振動子およびその形成方法Info
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- JP6232124B2 JP6232124B2 JP2016501996A JP2016501996A JP6232124B2 JP 6232124 B2 JP6232124 B2 JP 6232124B2 JP 2016501996 A JP2016501996 A JP 2016501996A JP 2016501996 A JP2016501996 A JP 2016501996A JP 6232124 B2 JP6232124 B2 JP 6232124B2
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2406—Electrostatic or capacitive probes, e.g. electret or cMUT-probes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
- B81C2201/0195—Transfer of a layer from a carrier wafer to a device wafer the layer being unstructured
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
- B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
- B81C2203/0757—Topology for facilitating the monolithic integration
- B81C2203/0771—Stacking the electronic processing unit and the micromechanical structure
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Pressure Sensors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Electrodes Of Semiconductors (AREA)
- Apparatuses For Generation Of Mechanical Vibrations (AREA)
Description
[0001] 本出願は、整理番号B1348.70007US00のもとに2013年3月15日に出願された、「COMPLEMENTARY METAL OXIDE SEMICONDUCTOR(CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME」という名称の米国仮特許出願第61/794,744号の米国特許法第119条(e)のもとでの利益を主張し、その全体が参照により本明細書に組み込まれる。
Claims (8)
- 相補型金属酸化膜半導体(CMOS)集積回路を有する半導体ウェハと、
電極と、
少なくとも部分的にキャビティが形成された絶縁材料と、
前記絶縁材料に接触し、前記キャビティを封止し、前記キャビティに近い第1の側と前記キャビティから遠い第2の側とを有する導電層であって、前記電極と前記導電層との間に前記キャビティを挟んだ状態で、前記電極と、前記キャビティと、前記導電層とが合わせて超音波振動子を少なくとも部分的に画定する、導電層と、
前記電極を前記CMOS集積回路に結合する導電性接点と、
前記絶縁材料に埋め込まれた導電性プラグであって、前記導電層を貫通することなく前記キャビティに近い前記導電層の前記第1の側を終端とすることで前記導電性プラグの表面が前記導電層の前記第1の側と接合される、導電性プラグと、を備え、
前記導電性プラグは前記導電層を前記CMOS集積回路に電気的に接続し、
前記電極と前記導電性プラグとは互いに電気的に絶縁される、装置。 - 前記導電層が前記超音波振動子のメンブレンの第1の層を表す、請求項1に記載の装置。
- 前記導電性プラグと前記導電層とが同じ材料から形成される、請求項1に記載の装置。
- 前記キャビティが第1の幅を有し、前記電極が前記第1の幅より小さい第2の幅を有する、請求項1に記載の装置。
- 前記キャビティが第1の幅を有し、前記電極が前記第1の幅より大きい第2の幅を有する、請求項1に記載の装置。
- 前記導電層がシリコンウェハ上のコーティング層を表す、請求項1に記載の装置。
- 前記電極に結合されたメンブレンストッパをさらに備える、請求項1に記載の装置。
- 前記導電層の厚さが5ミクロン未満である、請求項1に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361794744P | 2013-03-15 | 2013-03-15 | |
US61/794,744 | 2013-03-15 | ||
PCT/US2014/025924 WO2014151525A2 (en) | 2013-03-15 | 2014-03-13 | Complementary metal oxide semiconductor (cmos) ultrasonic transducers and methods for forming the same |
Related Child Applications (1)
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JP2017203056A Division JP6553695B2 (ja) | 2013-03-15 | 2017-10-20 | 相補型金属酸化膜半導体(cmos)超音波振動子およびその形成方法 |
Publications (3)
Publication Number | Publication Date |
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JP2016518739A JP2016518739A (ja) | 2016-06-23 |
JP2016518739A5 JP2016518739A5 (ja) | 2017-04-20 |
JP6232124B2 true JP6232124B2 (ja) | 2017-11-15 |
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JP2016501996A Active JP6232124B2 (ja) | 2013-03-15 | 2014-03-13 | 相補型金属酸化膜半導体(cmos)超音波振動子およびその形成方法 |
JP2017203056A Active JP6553695B2 (ja) | 2013-03-15 | 2017-10-20 | 相補型金属酸化膜半導体(cmos)超音波振動子およびその形成方法 |
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JP2017203056A Active JP6553695B2 (ja) | 2013-03-15 | 2017-10-20 | 相補型金属酸化膜半導体(cmos)超音波振動子およびその形成方法 |
Country Status (9)
Country | Link |
---|---|
US (8) | US9242275B2 (ja) |
EP (3) | EP4122609A1 (ja) |
JP (2) | JP6232124B2 (ja) |
KR (1) | KR102170559B1 (ja) |
CN (1) | CN105307975B (ja) |
AU (2) | AU2014234071B2 (ja) |
CA (1) | CA2905040C (ja) |
TW (2) | TWI623081B (ja) |
WO (1) | WO2014151525A2 (ja) |
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