JP6227141B2 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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- JP6227141B2 JP6227141B2 JP2016530791A JP2016530791A JP6227141B2 JP 6227141 B2 JP6227141 B2 JP 6227141B2 JP 2016530791 A JP2016530791 A JP 2016530791A JP 2016530791 A JP2016530791 A JP 2016530791A JP 6227141 B2 JP6227141 B2 JP 6227141B2
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- 239000004065 semiconductor Substances 0.000 title claims description 88
- 239000007787 solid Substances 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Description
図1は、本発明の実施の形態1に係る電力用半導体装置の構成を示す斜視図であり、図2及び図3は、図1のA−A線及びB−B線に沿った断面斜視図である。なお、図2及び図3では、理解を容易にするために、図1の電力用半導体装置の構成要素の一部の図示を省略したり、図1のゲート信号電極3d及びエミッタ信号電極3eの配置を変更したりしている。
図5及び図6に示す結果から分かるように、関連半導体装置では、ゲート信号の波形に振動が生じているが、本実施の形態1に係る電力用半導体装置では、ゲート信号の波形において振動を抑制することができる。したがって、本実施の形態1によれば、信頼性の高い電力用半導体装置を実現することができる。
実施の形態1では、コレクタ主端子4及びエミッタ主端子5の突出部分の全周を囲う信号線8は、ゲート信号線8a及びエミッタ信号線8bの両方を含んでいた。しかしこれに限ったものではなく、当該信号線8は、ゲート信号線8a及びエミッタ信号線8bのいずれか一方を含むものであってもよい。図7に、信号線8が、エミッタ信号線8bを含まずに、ゲート信号線8aを含む構成を示す。
図8は、本発明の実施の形態2に係る電力用半導体装置の部分構成を模式的に示す断面斜視図である。なお、本実施の形態2に係る電力用半導体装置において、以上で説明した構成要素と同一または類似するものについては同じ参照符号を付し、異なる部分について主に説明する。
実施の形態2では、ゲート信号線8a及びエミッタ信号線8bの両方がベタパターンで形成されていた。しかしこれに限ったものではなく、ゲート信号線8a及びエミッタ信号線8bの一方がベタパターンで形成され、他方がベタパターンで形成されない構成であってもよい。
Claims (6)
- 半導体スイッチ素子と、
前記半導体スイッチ素子と電気的に接続され、前記半導体スイッチ素子の配設面から突出する突出部分を有する複数のコレクタ主端子及び複数のエミッタ主端子と、
前記複数のコレクタ主端子の前記突出部分、及び、前記複数のエミッタ主端子の前記突出部分に対して、全ての前記突出部分の全周を囲い、かつ平面視において離間する信号線と
を備え、
前記信号線は、
前記半導体スイッチ素子と電気的に接続されたゲート信号線及びエミッタ信号線の双方を含む、電力用半導体装置。 - 請求項1に記載の電力用半導体装置であって、
前記信号線は、前記ゲート信号線及び前記エミッタ信号線を含み、
前記ゲート信号線及び前記エミッタ信号線が互いに平行な平板からなる、電力用半導体装置。 - 請求項1または請求項2に記載の電力用半導体装置であって、
前記配設面上方に配設されたプリント基板
をさらに備え、
前記信号線は、前記プリント基板に配線されている、電力用半導体装置。 - 請求項1または請求項2に記載の電力用半導体装置であって、
前記コレクタ主端子には、絶縁性を有する樹脂がコーティングされている、電力用半導体装置。 - 請求項1に記載の電力用半導体装置であって、
前記配設面上方に配設されたプリント基板
をさらに備え、
前記ゲート信号線及びエミッタ信号線の少なくともいずれか1つが、前記プリント基板にベタパターンで形成されている、電力用半導体装置。 - 請求項1または請求項2に記載の電力用半導体装置であって、
前記半導体スイッチ素子は、
半導体モジュールに搭載された、ワイドバンドギャップ半導体からなる半導体チップに含まれる、電力用半導体装置。
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