JP6224918B2 - 表示装置及びその製造方法 - Google Patents
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Description
第1支持基板の上に延在した第1樹脂層を形成した後に、前記第1樹脂層上において第1領域に第1表示素子部及び第1実装部を形成するとともに前記第1領域に隣接する第2領域に第2表示素子部及び第2実装部を形成した第1基板を用意し、第2支持基板の上に延在した第2樹脂層を形成した後に、前記第2樹脂層上において前記第1表示素子部と対向する第1カラーフィルタ層を形成するとともに前記第2表示素子部と対向する第2カラーフィルタ層を形成した第2基板を用意し、前記第1基板と前記第2基板とを貼り合わせ、前記第1表示素子部と前記第1カラーフィルタ層とを接着するとともに前記第2表示素子部と前記第2カラーフィルタ層とを接着し、前記第2基板に向けて第1レーザー光を照射して、前記第2樹脂層から前記第2支持基板を剥離し、前記第1樹脂層及び前記第2樹脂層に向けて前記第1レーザー光とは異なる波長の第2レーザー光を照射して、前記第1樹脂層及び前記第2樹脂層をカットし、前記第1実装部に対向する前記第2樹脂層が前記第1実装部から離間する方向に反り返った状態で前記第1実装部に信号供給源を実装し、前記第1樹脂層と前記第2樹脂層とをその間に前記信号供給源を挟持した状態で接着する、表示装置の製造方法が提供される。
第1樹脂基板と、前記第1樹脂基板上に形成された表示素子部及び実装部と、を備えたアレイ基板と、前記第1樹脂基板と同一形状に形成され前記表示素子部及び前記実装部と対向する第2樹脂基板と、前記第2樹脂基板の内面側に形成され前記表示素子部と対向するカラーフィルタ層と、前記第2樹脂基板の内面側に形成され少なくとも前記実装部と対向するバリア層と、を備えた対向基板と、前記表示素子部と前記カラーフィルタ層とを接着する第1接着剤と、前記実装部に実装された信号供給源と、前記第1樹脂基板と前記第2樹脂基板とをその間に前記信号供給源を挟持した状態で接着する第2接着剤と、を備えた表示装置が提供される。
OLED1乃至OLED3…有機EL素子
10…第1樹脂基板 30…第2樹脂基板 31…バリア層
41…接着剤 42…接着剤
Claims (7)
- 第1支持基板の上に延在した第1樹脂層を形成した後に、前記第1樹脂層上において第1領域に第1表示素子部及び第1実装部を形成するとともに前記第1領域に隣接する第2領域に第2表示素子部及び第2実装部を形成した第1基板を用意し、
第2支持基板の上に第2樹脂層を形成した第2基板を用意し、
前記第2樹脂層の前記第1基板と対向する側に圧縮応力を有するように成膜されたバリア層を形成し、
前記第1基板と前記第2基板とを貼り合わせ、
前記第2基板に向けて第1レーザー光を照射して、前記第2樹脂層から前記第2支持基板を剥離し、
前記第1樹脂層及び前記第2樹脂層に向けて前記第1レーザー光とは異なる波長の第2レーザー光を照射して、前記第1樹脂層及び前記第2樹脂層をカットし、
前記第1実装部に対向する前記第2樹脂層が前記第1実装部から離間する方向に反り返った状態で前記第1実装部に信号供給源を実装し、
前記第1樹脂層と前記第2樹脂層とをその間に前記信号供給源を挟持した状態で接着する、表示装置の製造方法。 - さらに、前記第1基板と前記第2基板とを貼り合わせる前に、前記第1表示素子部と対向する第1カラーフィルタ層と、前記第2表示素子部と対向する第2カラーフィルタ層と、を形成する、請求項1に記載の表示装置の製造方法。
- 前記信号供給源を実装する工程では、前記第1実装部に対向する前記第2樹脂層を静電吸着することで反り返らせる、請求項1または2に記載の表示装置の製造方法。
- さらに、前記信号供給源を実装した後に、前記第1基板に向けて前記第1レーザー光を照射して、前記第1樹脂層から前記第1支持基板を剥離する、請求項1乃至3のいずれか1項に記載の表示装置の製造方法。
- 第1樹脂基板と、前記第1樹脂基板上に形成された表示素子部及び実装部と、を備えたアレイ基板と、
前記第1樹脂基板と同一形状に形成され前記表示素子部及び前記実装部と対向する第2樹脂基板と、前記第2樹脂基板の内面側に形成され圧縮応力を有するバリア層と、を備えた対向基板と、
前記アレイ基板の前記表示素子部と前記対向基板とを接着する第1接着剤と、
前記実装部に実装された信号供給源と、
前記アレイ基板の前記実装部と前記対向基板とをその間に前記信号供給源を挟持した状態で接着する第2接着剤と、
を備え、
前記バリア層は、前記実装部と対向し、前記第2接着剤と接触している、表示装置。 - 前記第2接着剤は、平面視で前記信号供給源とは重ならない位置に延在している、請求項5に記載の表示装置。
- 前記対向基板は、さらに、カラーフィルタ層を備え、
前記カラーフィルタ層は、前記表示素子部と対向し、前記バリア層によって覆われている、請求項5または6に記載の表示装置。
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JP2013116178A JP6224918B2 (ja) | 2013-05-31 | 2013-05-31 | 表示装置及びその製造方法 |
US14/285,729 US9536929B2 (en) | 2013-05-31 | 2014-05-23 | Display device and method of manufacturing the same |
KR1020140063553A KR101609050B1 (ko) | 2013-05-31 | 2014-05-27 | 표시 장치 및 그 제조 방법 |
CN201410239090.XA CN104218188B (zh) | 2013-05-31 | 2014-05-30 | 显示装置及其制造方法 |
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JP6182985B2 (ja) * | 2013-06-05 | 2017-08-23 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、電子機器 |
JP2015156298A (ja) * | 2014-02-20 | 2015-08-27 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネッセンス表示装置の製造方法 |
JP6445358B2 (ja) * | 2015-03-17 | 2018-12-26 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
JP6462440B2 (ja) * | 2015-03-18 | 2019-01-30 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置の製造方法 |
US9799625B2 (en) * | 2015-06-12 | 2017-10-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
JP6352957B2 (ja) * | 2015-12-21 | 2018-07-04 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
CN108966693B (zh) * | 2016-03-10 | 2020-08-04 | 鸿海精密工业股份有限公司 | 可挠性电子设备的制造方法 |
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KR102542429B1 (ko) * | 2016-05-25 | 2023-06-13 | 엘지디스플레이 주식회사 | 유기발광 표시장치 및 그 제조방법 |
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JP2018120823A (ja) * | 2017-01-27 | 2018-08-02 | 株式会社ジャパンディスプレイ | 表示パネルの製造方法 |
WO2018179168A1 (ja) * | 2017-03-29 | 2018-10-04 | シャープ株式会社 | 表示デバイス、表示デバイスの製造方法、表示デバイスの製造装置、成膜装置 |
JP6907032B2 (ja) * | 2017-06-06 | 2021-07-21 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
CN108365119A (zh) * | 2018-02-07 | 2018-08-03 | 上海瀚莅电子科技有限公司 | 硅基微显示器及其制备方法 |
JP7434037B2 (ja) * | 2020-04-03 | 2024-02-20 | 株式会社ジャパンディスプレイ | 発光素子の実装方法および表示装置 |
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JP5258436B2 (ja) * | 2008-07-30 | 2013-08-07 | 株式会社東芝 | 表示装置及びその製造方法 |
EP2374149B1 (en) * | 2008-12-05 | 2018-06-13 | Hydis Technologies Co., Ltd | Method of forming electronic devices having plastic substrates |
JP2010177034A (ja) * | 2009-01-29 | 2010-08-12 | Sony Corp | 表示装置の製造方法および製造装置 |
JP2011221404A (ja) | 2010-04-13 | 2011-11-04 | Bridgestone Corp | フレキシブルディスプレイモジュールの製造方法 |
JP2011227205A (ja) * | 2010-04-16 | 2011-11-10 | Hitachi Displays Ltd | 表示装置 |
WO2013001771A1 (ja) * | 2011-06-28 | 2013-01-03 | シャープ株式会社 | 表示装置の製造方法 |
TWI433625B (zh) * | 2011-07-04 | 2014-04-01 | Ind Tech Res Inst | 軟性電子元件的製法 |
JP5685567B2 (ja) * | 2012-09-28 | 2015-03-18 | 株式会社東芝 | 表示装置の製造方法 |
JP2014186169A (ja) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | 表示装置の製造方法及び表示装置 |
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US20140353638A1 (en) | 2014-12-04 |
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KR20140141480A (ko) | 2014-12-10 |
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