JP6223296B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6223296B2 JP6223296B2 JP2014153806A JP2014153806A JP6223296B2 JP 6223296 B2 JP6223296 B2 JP 6223296B2 JP 2014153806 A JP2014153806 A JP 2014153806A JP 2014153806 A JP2014153806 A JP 2014153806A JP 6223296 B2 JP6223296 B2 JP 6223296B2
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
- H05K7/14329—Housings specially adapted for power drive units or power converters specially adapted for the configuration of power bus bars
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
- H02M5/40—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc
- H02M5/42—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters
- H02M5/44—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac
- H02M5/453—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal
- H02M5/458—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M5/4585—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only having a rectifier with controlled elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inverter Devices (AREA)
Description
図1はこの発明の実施の形態1である複合モジュール1の構成を示す説明図である。実施の形態1の複合モジュール1はコンバータ部10及びインバータ部20を封止樹脂内に一体化して有する、平面視矩形状の半導体装置である。
図4はこの発明の実施の形態2である複合モジュール2の構成を示す説明図である。同図に示すように、複合モジュール2はコンバータ部10及びインバータ部20に加え、さらに、ブレーキ部30を封止樹脂内に一体化して内蔵している。なお、ブレーキ部30を設けた以外の構成は、図1〜図3で示した実施の形態1の複合モジュール1と同様である。
図6はこの発明の実施の形態3である複合モジュール3の構成を示す説明図である。同図に示すように、複合モジュール3は実施の形態2の複合モジュール2と同様、コンバータ部10及びインバータ部20に加え、さらに、ブレーキ部30を封止樹脂内に内蔵して一体化している。
図7はこの発明の実施の形態4である複合モジュール4の構成を示す説明図である。同図に示すように、複合モジュール4は実施の形態2の複合モジュール2と同様、コンバータ部10及びインバータ部20に加え、さらに、封止樹脂内にブレーキ部30を内蔵している。
図8は複合モジュール4の内部レイアウト構成例(実装例)を模式的に示す説明図である。以下、同図を参照して、複合モジュール4内のレイアウト構成を説明する。
実施の形態1〜実施の形態4の変形例として、複合モジュール1〜4のインバータ部20におけるパワー素子であるIGBT11〜13及び21〜23の構成材料としてSiCを採用し、複合モジュール2〜4のブレーキ部30におけるパワー素子であるIGBT40の構成材料としてSiCを採用する変形例が考えられる。
Claims (5)
- コンバータ部及びインバータ部を封止樹脂内に一体化して有する、平面視矩形状の半導体装置であって、
前記コンバータ部に電気的に接続され、平面視して一方側面側に設けられる外部接続用の複数のコンバータ出力端子と、
前記コンバータ部に電気的に接続され、平面視して一方側面に対向する他方側面側に設けられる外部接続用の複数のコンバータ入力端子と、
前記一方側面側に前記複数のコンバータ出力端子に隣接して設けられる外部接続用の隣接外部端子とを備え、
前記複数のコンバータ出力端子及び前記隣接外部端子が第1の端子群に、前記複数のコンバータ入力端子が第2の端子群に分類され、前記第1及び第2の端子群は同数の端子を有し、
前記第1の端子群のうち互いに隣接する二つの端子間それぞれの第1の距離と、前記第2の端子群のうち互いに隣接する二つの端子間それぞれの第2の距離とは、同一長に設定されることを特徴とする、
半導体装置。 - 請求項1記載の半導体装置であって、
前記封止樹脂内に前記コンバータ部及び前記インバータ部と一体化され、前記インバータ部と電気的に接続して設けられるブレーキ部をさらに備える、
半導体装置。 - 請求項2記載の半導体装置であって、
前記ブレーキ部はIGBTを有し、
前記IGBTのエミッタ電極に電気的に接続され、前記一方側面側に設けられる外部接続用のIGBTエミッタ端子をさらに備え、
前記隣接外部端子は前記IGBTエミッタ端子である、
半導体装置。 - 請求項3記載の半導体装置であって、
前記IGBTのコレクタ電極に電気的に接続され、前記他方側面側に設けられる外部接続用のIGBTコレクタ端子と、
前記ブレーキ部及び前記インバータ部に電気的に接続され、前記他方側面側に設けられる外部接続用の電源端子とをさらに備え、
前記IGBTコレクタ端子,前記電源端子は互いに隣接配置される、
半導体装置。 - 請求項1から請求項4のうち、いずれか1項に記載の半導体装置であって、
前記インバータ部は内部に少なくとも一つのパワー素子を有し、
前記少なくとも一つのパワー素子はSiCを構成材料とする、
半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014153806A JP6223296B2 (ja) | 2014-07-29 | 2014-07-29 | 半導体装置 |
US14/690,751 US10186978B2 (en) | 2014-07-29 | 2015-04-20 | Modular power conversion semiconductor device |
DE102015213491.1A DE102015213491B4 (de) | 2014-07-29 | 2015-07-17 | Halbleitervorrichtung |
CN201510455805.XA CN105321935B (zh) | 2014-07-29 | 2015-07-29 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2014153806A JP6223296B2 (ja) | 2014-07-29 | 2014-07-29 | 半導体装置 |
Publications (2)
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JP2016032021A JP2016032021A (ja) | 2016-03-07 |
JP6223296B2 true JP6223296B2 (ja) | 2017-11-01 |
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JP2014153806A Active JP6223296B2 (ja) | 2014-07-29 | 2014-07-29 | 半導体装置 |
Country Status (4)
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US (1) | US10186978B2 (ja) |
JP (1) | JP6223296B2 (ja) |
CN (1) | CN105321935B (ja) |
DE (1) | DE102015213491B4 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6598739B2 (ja) * | 2016-07-14 | 2019-10-30 | 三菱電機株式会社 | 半導体モジュール |
JP2022103562A (ja) | 2020-12-28 | 2022-07-08 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1028520A4 (en) | 1996-09-06 | 2000-08-16 | Hitachi Ltd | SEMICONDUCTOR ARRANGEMENT |
JP4468614B2 (ja) * | 2001-07-03 | 2010-05-26 | 三菱電機株式会社 | 電力用半導体装置 |
JP2004022968A (ja) * | 2002-06-19 | 2004-01-22 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2005159111A (ja) | 2003-11-27 | 2005-06-16 | Matsushita Electric Ind Co Ltd | マルチチップ型半導体装置 |
JP2005333099A (ja) * | 2004-04-22 | 2005-12-02 | Matsushita Electric Ind Co Ltd | 半導体モジュール |
JP4567570B2 (ja) * | 2005-10-17 | 2010-10-20 | 三菱電機株式会社 | 電力変換装置 |
JP5390064B2 (ja) * | 2006-08-30 | 2014-01-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2008263210A (ja) | 2008-05-16 | 2008-10-30 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP4344776B2 (ja) * | 2008-08-11 | 2009-10-14 | 株式会社ルネサステクノロジ | 半導体装置 |
JP5278529B2 (ja) * | 2011-12-29 | 2013-09-04 | 三菱電機株式会社 | 半導体モジュール |
CN102868319B (zh) | 2012-09-12 | 2016-03-09 | 北京工业大学 | 基于人体运动能量的能量回收及利用装置 |
CN104044475B (zh) * | 2013-03-15 | 2017-07-11 | 通用电气公司 | 改进的驱动***以及使用该驱动***的装置 |
JP2015065339A (ja) * | 2013-09-25 | 2015-04-09 | 三菱電機株式会社 | 半導体装置 |
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2014
- 2014-07-29 JP JP2014153806A patent/JP6223296B2/ja active Active
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2015
- 2015-04-20 US US14/690,751 patent/US10186978B2/en active Active
- 2015-07-17 DE DE102015213491.1A patent/DE102015213491B4/de active Active
- 2015-07-29 CN CN201510455805.XA patent/CN105321935B/zh active Active
Also Published As
Publication number | Publication date |
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CN105321935B (zh) | 2019-01-01 |
CN105321935A (zh) | 2016-02-10 |
DE102015213491A1 (de) | 2016-02-04 |
US10186978B2 (en) | 2019-01-22 |
US20160036343A1 (en) | 2016-02-04 |
DE102015213491B4 (de) | 2022-12-29 |
JP2016032021A (ja) | 2016-03-07 |
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