JP6204500B2 - 単結晶成長装置 - Google Patents
単結晶成長装置 Download PDFInfo
- Publication number
- JP6204500B2 JP6204500B2 JP2015555091A JP2015555091A JP6204500B2 JP 6204500 B2 JP6204500 B2 JP 6204500B2 JP 2015555091 A JP2015555091 A JP 2015555091A JP 2015555091 A JP2015555091 A JP 2015555091A JP 6204500 B2 JP6204500 B2 JP 6204500B2
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- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- crystal growth
- screen
- growth apparatus
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-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Claims (16)
- チャンバーと、
前記チャンバーの内部に設けられ、単結晶成長原料である溶融液を収容する坩堝と、
前記坩堝と前記チャンバーの側壁との間に配置され、前記坩堝を加熱する発熱体と、
前記坩堝の上端に配置される坩堝スクリーンと、
を備え、
前記坩堝スクリーンは、前記坩堝中に収容されている前記溶融液から発生する輻射熱を前記坩堝の内部側壁に反射する折り曲げ部を有し、
前記坩堝スクリーンは、中央に開口部を有する円板状であり、
外周面に隣接し、前記坩堝の上端によって支持される外側部分、及び内周面に隣接し、前記折り曲げ部を有する内側部分を含み、
前記外側部分の下面を基準に、前記内側部分の下面は前記坩堝に向かう方向に傾斜し、前記内側部分は、前記内周面から前記外周面に向かって厚さが減少している、
単結晶成長装置。 - 前記折り曲げ部は、前記坩堝スクリーンの一部が前記坩堝に向かう方向に折り曲がっている部分である、請求項1に記載の単結晶成長装置。
- 前記坩堝スクリーンは、前記坩堝の上端と接触し、前記坩堝の上端によって支持されている、請求項1または2に記載の単結晶成長装置。
- 前記内側部分は、前記外側部分を基準に、前記坩堝に向かう方向に折り曲がっている、請求項1に記載の単結晶成長装置。
- 前記内側部分の上面と前記外側部分の上面は互いに平行であり、同一平面をなす、請求項1に記載の単結晶成長装置。
- 前記坩堝スクリーン上に配置される少なくとも一つの上部断熱材をさらに備え、
前記少なくとも一つの上部断熱材は、複数の層が積層された構造である、請求項1に記載の単結晶成長装置。 - チャンバーと、
前記チャンバーの内部に設けられ、単結晶成長原料である溶融液を収容する坩堝と、
前記坩堝の上端に配置され、前記坩堝中に収容されている前記溶融液から発生する輻射熱を前記坩堝の内部側壁に反射する折り曲げ部を有する反射部と、
前記反射部上に配置され、前記溶融液の表面から放出される輻射熱を前記溶融液に反射させる坩堝スクリーンと、
を備える、単結晶成長装置。 - 前記反射部は、中央に開口部を有する円板状である、請求項7に記載の単結晶成長装置。
- 前記反射部は、
前記坩堝スクリーンを支持する支持部と、
前記支持部から折り曲がっており、前記溶融液から発生する輻射熱を前記坩堝の内部側壁に反射する折り曲げ部と、を有する、請求項8に記載の単結晶成長装置。 - 前記支持部は、一端が前記坩堝スクリーンの下部面の周縁と接触し、他端は、前記坩堝の上端と接触する、請求項9に記載の単結晶成長装置。
- 前記折り曲げ部の長さは、前記坩堝スクリーンの半径の長さよりも短い、請求項9に記載の単結晶成長装置。
- 前記反射部の長さは、前記支持部の高さをcosθ1で割った値より小さい又は等しく、θ1は、前記折り曲げ部と前記支持部とがなす角度であることを特徴とする、請求項9に記載の単結晶成長装置。
- 前記折り曲げ部の上面は、前記坩堝スクリーンの下部面と接触し、前記折り曲げ部の上面を基準に、前記折り曲げ部の下面は傾斜している、請求項9に記載の単結晶成長装置。
- 前記折り曲げ部は、前記支持部と接する境界面から先端に向かって厚さが増加する、請求項13に記載の単結晶成長装置。
- 前記反射部は、モリブデンからなる、請求項7に記載の単結晶成長装置。
- 前記坩堝スクリーン上に配置される少なくとも一つの上部断熱材をさらに備え、
前記少なくとも一つの上部断熱材は、複数の層が積層された構造である、請求項7に記載の単結晶成長装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2013-0007353 | 2013-01-23 | ||
KR1020130007353A KR101464562B1 (ko) | 2013-01-23 | 2013-01-23 | 단결정 잉곳 성장 장치 |
KR10-2013-0148984 | 2013-12-03 | ||
KR1020130148984A KR101532266B1 (ko) | 2013-12-03 | 2013-12-03 | 단결정 성장 장치 |
PCT/KR2013/011886 WO2014115969A1 (ko) | 2013-01-23 | 2013-12-19 | 단결정 성장 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016504266A JP2016504266A (ja) | 2016-02-12 |
JP6204500B2 true JP6204500B2 (ja) | 2017-09-27 |
Family
ID=51227736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015555091A Expired - Fee Related JP6204500B2 (ja) | 2013-01-23 | 2013-12-19 | 単結晶成長装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9657411B2 (ja) |
EP (1) | EP2949788A4 (ja) |
JP (1) | JP6204500B2 (ja) |
CN (1) | CN105051267B (ja) |
WO (1) | WO2014115969A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108239785A (zh) * | 2016-12-23 | 2018-07-03 | 有研半导体材料有限公司 | 一种直拉法生产单晶硅过程中对挂料的处理方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2713986B2 (ja) * | 1988-05-31 | 1998-02-16 | 株式会社東芝 | 酸化物単結晶の製造装置 |
US5363795A (en) | 1991-09-04 | 1994-11-15 | Kawasaki Steel Corporation | Czochralski crystal pulling process and an apparatus for carrying out the same |
JPH0585881A (ja) | 1991-09-27 | 1993-04-06 | Kawasaki Steel Corp | 単結晶引上装置 |
US5922127A (en) | 1997-09-30 | 1999-07-13 | Memc Electronic Materials, Inc. | Heat shield for crystal puller |
JPH11189487A (ja) * | 1997-12-25 | 1999-07-13 | Toshiba Corp | 酸化物単結晶製造装置 |
JP2000211990A (ja) | 1999-01-25 | 2000-08-02 | Toshiba Ceramics Co Ltd | 半導体単結晶引上装置および引上方法 |
US6482263B1 (en) | 2000-10-06 | 2002-11-19 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal pulling apparatus |
KR100445187B1 (ko) * | 2000-12-05 | 2004-08-18 | 주식회사 실트론 | 단결정 실리콘 잉곳 및 그 제조방법과 제조 장치 |
US6579362B2 (en) * | 2001-03-23 | 2003-06-17 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal puller |
JP2005053722A (ja) * | 2003-08-01 | 2005-03-03 | Shin Etsu Handotai Co Ltd | 単結晶製造装置及び単結晶の製造方法 |
KR100831044B1 (ko) | 2005-09-21 | 2008-05-21 | 주식회사 실트론 | 고품질 실리콘 단결정 잉곳의 성장장치, 그 장치를 이용한성장방법 |
US8152921B2 (en) * | 2006-09-01 | 2012-04-10 | Okmetic Oyj | Crystal manufacturing |
KR100906281B1 (ko) | 2007-07-19 | 2009-07-06 | 주식회사 실트론 | 실리콘 단결정 잉곳 성장장치의 열실드 구조물 및 이를 이용한 실리콘 단결정 잉곳 성장장치 |
KR100880895B1 (ko) * | 2007-11-23 | 2009-01-30 | 주식회사 실트론 | 열쉴드 및 이를 구비한 실리콘 단결정 잉곳 생산장치 |
KR101263082B1 (ko) * | 2010-11-15 | 2013-05-09 | 주식회사 엘지실트론 | 사파이어 잉곳 성장장치 |
CN102051674B (zh) | 2011-01-20 | 2013-11-06 | 王楚雯 | 单晶锭制造装置 |
CN102787351A (zh) | 2011-05-20 | 2012-11-21 | 昭和电工株式会社 | 单晶制造装置、单晶制造方法和单晶 |
CN202558965U (zh) * | 2012-04-10 | 2012-11-28 | 江苏双良新能源装备有限公司 | 泡生法生长炉炉体 |
-
2013
- 2013-12-19 CN CN201380074978.6A patent/CN105051267B/zh not_active Expired - Fee Related
- 2013-12-19 EP EP13872565.0A patent/EP2949788A4/en not_active Withdrawn
- 2013-12-19 US US14/763,047 patent/US9657411B2/en active Active
- 2013-12-19 WO PCT/KR2013/011886 patent/WO2014115969A1/ko active Application Filing
- 2013-12-19 JP JP2015555091A patent/JP6204500B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2014115969A1 (ko) | 2014-07-31 |
US20150354092A1 (en) | 2015-12-10 |
EP2949788A4 (en) | 2016-10-19 |
CN105051267A (zh) | 2015-11-11 |
US9657411B2 (en) | 2017-05-23 |
EP2949788A1 (en) | 2015-12-02 |
CN105051267B (zh) | 2018-07-06 |
JP2016504266A (ja) | 2016-02-12 |
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