JP6202798B2 - 酸化アンチモン膜の原子層堆積 - Google Patents
酸化アンチモン膜の原子層堆積 Download PDFInfo
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- JP6202798B2 JP6202798B2 JP2012225541A JP2012225541A JP6202798B2 JP 6202798 B2 JP6202798 B2 JP 6202798B2 JP 2012225541 A JP2012225541 A JP 2012225541A JP 2012225541 A JP2012225541 A JP 2012225541A JP 6202798 B2 JP6202798 B2 JP 6202798B2
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- antimony
- layer
- antimony oxide
- substrate
- oxygen
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- 229910000410 antimony oxide Inorganic materials 0.000 title claims description 101
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical group [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 title claims description 101
- 238000000231 atomic layer deposition Methods 0.000 title claims description 83
- 229910052787 antimony Inorganic materials 0.000 claims description 113
- 229910052760 oxygen Inorganic materials 0.000 claims description 88
- 239000001301 oxygen Substances 0.000 claims description 88
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 87
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 66
- 239000000376 reactant Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 53
- 230000008569 process Effects 0.000 claims description 52
- 238000000151 deposition Methods 0.000 claims description 44
- -1 antimony halide Chemical class 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 38
- 238000006243 chemical reaction Methods 0.000 claims description 35
- 230000008021 deposition Effects 0.000 claims description 34
- 239000002243 precursor Substances 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 25
- 229910001868 water Inorganic materials 0.000 claims description 25
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 24
- 125000003342 alkenyl group Chemical group 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 150000001412 amines Chemical class 0.000 claims description 12
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 claims description 12
- 229920006395 saturated elastomer Polymers 0.000 claims description 10
- 150000004820 halides Chemical class 0.000 claims description 9
- 125000004400 (C1-C12) alkyl group Chemical group 0.000 claims description 8
- 150000003973 alkyl amines Chemical class 0.000 claims description 8
- 125000004122 cyclic group Chemical group 0.000 claims description 8
- 239000003446 ligand Substances 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 150000004965 peroxy acids Chemical class 0.000 claims description 2
- 239000010408 film Substances 0.000 description 115
- 239000010410 layer Substances 0.000 description 73
- 239000012071 phase Substances 0.000 description 33
- 238000010926 purge Methods 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 19
- 239000007789 gas Substances 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- 238000000059 patterning Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 10
- 125000006850 spacer group Chemical group 0.000 description 9
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 235000002906 tartaric acid Nutrition 0.000 description 8
- 239000011975 tartaric acid Substances 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 150000001463 antimony compounds Chemical class 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical group 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 241000894007 species Species 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000002052 molecular layer Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229940058905 antimony compound for treatment of leishmaniasis and trypanosomiasis Drugs 0.000 description 2
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical compound Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 description 2
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000008346 aqueous phase Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 241000233805 Phoenix Species 0.000 description 1
- FRRHLYYZJARMDN-UHFFFAOYSA-N [Sb].CNC.CNC.CNC Chemical group [Sb].CNC.CNC.CNC FRRHLYYZJARMDN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 150000001462 antimony Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 231100001010 corrosive Toxicity 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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- C23F1/26—Acidic compositions for etching refractory metals
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- General Chemical & Material Sciences (AREA)
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- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
本願は、2011年10月12日出願の米国仮出願第61/546,500号、および2012年2月10日出願の米国仮出願第61/597,373号に基づく優先権を主張する。これらの開示は、参照によりその全体を本願明細書に援用したものとする。
アンチモン化合物が基板に吸着するように、基板を、気化したアンチモン化合物と接触させることと、
過剰のアンチモン化合物および反応副生成物(存在する場合)を除去することと、
この基板を酸素ソースと接触させ、これにより、吸着された アンチモン化合物を酸化アンチモンへと転化することと、
過剰の未反応の酸素ソースおよび反応副生成物を除去することと
を含む。
酸化アンチモン(Sb2O3)薄膜を、Sb(OC2H5)3をアンチモンソースとして、およびO3を酸素ソースとして使用して、F−450 ALCVD(商標)反応器の中で、原子層堆積(ALD)によって堆積した。
酸化アンチモン(Sb2O3)薄膜を、SbCl3をアンチモンソースとして、およびO3を酸素ソースとして使用して、F−450 ALCVD(商標)反応器の中で、原子層堆積(ALD)によって堆積した。H2Oを酸素ソースとして使用すると(SbCl3パルス2.0秒間、パージ5.0秒間;H2Oパルス1.5秒間、パージ5秒間)、膜は得られなかった。しかしながら、O3に加えてH2Oを使用することにより、成長を高めることができ、均一性を増大させることができる。堆積サイクルは、SbCl3パルス2.0秒間、パージ5秒間;O3パルス3.0秒間、パージ5秒間;H2Oパルス1.5秒間、パージ5.0秒間からなっていた。
酸化アンチモン(SbOx)薄膜を、Sb(N(CH3)2)3をアンチモンソースとして、およびO3を酸素ソースとして使用して、Pulsar(登録商標) 2000 R&D反応器の中で、原子層堆積(ALD)によって堆積した。
酸化アンチモン(SbOx)薄膜を、Sb(OC2H5)3をアンチモンソースとしておよびO3を酸素ソースとして使用して、市販の、生産型のASM A412(商標) バッチ反応器の中で、原子層堆積(ALD)によって堆積した。
酸化アンチモン(SbOx)薄膜を、Sb(OC2H5)3をアンチモンソースとしておよびO3を酸素ソースとして使用して、Pulsar(登録商標) 2000 R&D反応器の中で、原子層堆積(ALD)によって堆積した。
酸化アンチモン(SbOx)薄膜を、Sb(N(CH3)2)3をアンチモンソースとして、およびO3を酸素ソースとして使用して、市販の、生産型のASM A412(商標) バッチ反応器の中で、原子層堆積(ALD)によって堆積した。
Claims (22)
- 酸化アンチモン薄膜を堆積するための原子層堆積プロセスであって、反応チャンバーの中で、堆積温度で、基板をアンチモン前駆体および酸素ソースと、交互にかつ逐次的に接触させることを含み、前記アンチモン前駆体は、ハロゲン化アンチモンおよびアンチモンアルコキシドから選択され、前記堆積温度は約500℃以下であり、前記酸化アンチモン薄膜はHF中でのエッチングに耐えるものであって、1% HF中において1分後に明確なエッチングを示さない、プロセス。
- 前記アンチモン前駆体はSbCl3である、請求項1に記載のプロセス。
- 前記アンチモン前駆体はSb(OEt)3である、請求項1に記載のプロセス。
- 前記酸素ソースは、水、酸素、過酸化水素、過酸化水素の水溶液、オゾン、原子状酸素、窒素酸化物、過酸(−−O−−O−−H)、アルコール、酸素含有ラジカルおよびこれらの混合物からなる群から選択される、請求項1に記載のプロセス。
- 前記酸素ソースは酸素プラズマを含む、請求項1に記載のプロセス。
- 前記酸素ソースは水ではない、請求項1に記載のプロセス。
- 前記基板を第3の反応物質と接触させることをさらに含み、前記第3の反応物質は水である、請求項6に記載のプロセス。
- 前記酸化アンチモンは式SbOx(式中、xは約1〜約3である)を有する、請求項1に記載のプロセス。
- 前記反応チャンバーはバッチ反応器の一部である、請求項1に記載のプロセス。
- 前記反応チャンバーはシングルウェーハ反応器の一部である、請求項1に記載のプロセス。
- 前記酸化アンチモンに異なる金属または金属酸化物をドーピングすることをさらに含む、請求項1に記載のプロセス。
- 前記薄膜は、半導体加工における犠牲層としての役割を果たす、請求項1に記載のプロセス。
- 前記薄膜は、レジストの上に堆積される、請求項12に記載のプロセス。
- 酸化アンチモン薄膜を堆積するための原子層堆積プロセスであって、反応チャンバーの中で、堆積温度で、基板をアンチモン前駆体および酸素ソースと、交互にかつ逐次的に接触させることを含み、前記アンチモン前駆体は、式SbRxA3−x(式中、xは1〜3であり、Rは、独立して選択される、直鎖状、分枝状、もしくは環状の、飽和もしくは不飽和の、C1−C12のアルキルまたはアルケニル基であり、Aは、アルキルアミン、ハライド、アミン、シリルまたはアルキルを含むリガンドである)を有し、前記堆積温度は500℃以下であり、前記酸化アンチモン薄膜はHF中でのエッチングに耐えるものであって、1% HF中において1分後に明確なエッチングを示さない、プロセス。
- 原子層堆積によって酸化アンチモン層を堆積する方法であって、
バッチ反応器の中で、基板を、式SbRxA3−x(式中、xは1〜3であり、Rは、独立して選択される、直鎖状、分枝状、もしくは環状の、飽和もしくは不飽和の、C1−C12のアルキルまたはアルケニル基であり、Aは、アルキルアミン、ハライド、アミン、シリルまたはアルキルを含むリガンドである)を有するアンチモン前駆体と接触させることと、
過剰のアンチモン前駆体を除去することと、
前記基板をオゾンと接触させることと、
過剰のオゾンを除去することと
を含む、方法。 - 反応空間の中で半導体基板上に構造体を形成する方法であって、
第1の物質を含む第1の層を前記基板上に堆積することと、
酸化アンチモンの第2の層を、原子層堆積プロセスによって前記基板上に堆積することであって、前記原子層堆積プロセスは、前記基板をアンチモン前駆体および酸素ソースと交互にかつ逐次的に接触させることを含む、ことと、
前記第1の層および第2の層を同時にエッチャントにさらすことで、前記第1の層または第2の層のうち一方を、他方に対して選択的にエッチングすることと
を含み、
前記アンチモン前駆体は、式SbRxA3−x(式中、xは1〜3であり、Rは、独立して選択される、直鎖状、分枝状、もしくは環状の、飽和もしくは不飽和の、C1−C12のアルキルまたはアルケニル基であり、Aは、アルキルアミン、ハライド、アミン、シリルまたはアルキルを含むリガンドである)を有する、方法。 - 酸化アンチモンの前記第2の層は、第1の物質を含む前記第1の層よりも選択的にエッチングされる、請求項16に記載の方法。
- 第1の物質を含む前記第1の層は、酸化アンチモンの前記第2の層よりも選択的にエッチングされる、請求項16に記載の方法。
- 酸化アンチモンを含む前記第2の層は犠牲層である、請求項16に記載の方法。
- 酸化アンチモンを含む前記第2の層はエッチング停止層である、請求項16に記載の方法。
- 酸化アンチモンを含む前記第2の層は、パターン形成されたレジスト層の上にわたって堆積される、請求項16に記載の方法。
- 前記酸素ソースは、水および酸素プラズマからなる群から選択される、請求項16に記載の方法。
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