JP6200001B2 - マイクロアコースティック部品および製造方法 - Google Patents
マイクロアコースティック部品および製造方法 Download PDFInfo
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- JP6200001B2 JP6200001B2 JP2015560609A JP2015560609A JP6200001B2 JP 6200001 B2 JP6200001 B2 JP 6200001B2 JP 2015560609 A JP2015560609 A JP 2015560609A JP 2015560609 A JP2015560609 A JP 2015560609A JP 6200001 B2 JP6200001 B2 JP 6200001B2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02858—Means for compensation or elimination of undesirable effects of wave front distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02984—Protection measures against damaging
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/105—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/081—Shaping or machining of piezoelectric or electrostrictive bodies by coating or depositing using masks, e.g. lift-off
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Transducers For Ultrasonic Waves (AREA)
Description
− 支持基板を準備するステップ、
− 基板の内部、上面、または上方の機能性音響領域内で、マイクロ音波が伝播可能な構造物を成形するステップ、
− 機能性音響領域を覆って犠牲層を配置するステップ、
− 犠牲層を覆って薄膜を堆積させるステップ、
− 薄膜と機能性音響領域の間の犠牲層を除去し、これによりフレーム構造が残るステップ
を含んでいる。
BE 下の電極
CAP カバー
CAV 空洞
ES 電極パターン
FAS 機能性音響領域
IDS インターデジタル構造物
IRS 内側の周縁領域
MAC マイクロアコースティック部品
ML 質量層
ORS 外側の周縁領域
PM 圧電材料
RS 載置面
SU 基板
TE 上の電極
Claims (8)
- 機能性音響領域(FAS)と、
前記機能性音響領域(FAS)を囲んでいる内側の周縁領域(IRS)と、
前記内側の周縁領域(IRS)を囲んでいる外側の周縁領域(ORS)と、
前記機能性音響領域(FAS)を覆い、かつ薄膜および載置面(RS)を備えるカバー(CAP)と
を含んでいるマイクロアコースティック部品(MAC)であって、
前記内側の周縁領域(IRS)が、前記機能性音響領域(FAS)と音響的に結合されており、かつ
前記載置面(RS)が、少なくとも前記内側の周縁領域(IRS)の一部に直接的に載っており、
望ましくない波動モードを抑制するため、または導波を改善するために、前記内側の周縁領域(IRS)内でフレーム構造の付加質量体(ML)により質量分布が局所的に高められており、かつ前記載置面(RS)が前記付加質量体(ML)の上に載っている、マイクロアコースティック部品(MAC)。 - 前記部品(MAC)が、
支持基板(SU)上の前記機能性音響領域(FAS)内で互いに噛み合っている電極フィンガ(EFI)を含んでおり、かつ表面弾性波もしくはガイドされたバルク弾性波によって動作するか、または
下の電極面(BE)と上の電極面(TE)の間の前記機能性音響領域(FAS)内に圧電材料(PM)を含んでおり、かつバルク弾性波によって動作する、
請求項1に記載のマイクロアコースティック部品(MAC)。 - 前記載置面(RS)および前記フレーム構造がそれぞれ内側のエッジを有しており、かつ両方のエッジが同一平面上で終端している、請求項1または2に記載のマイクロアコースティック部品(MAC)。
- さらに、音波を反射する構造物を含む、請求項1から3のいずれか一項に記載のマイクロアコースティック部品(MAC)。
- 前記カバー(CAP)が前記機能性音響領域(FAS)の上方の空洞(CAV)を取り囲んでいる、請求項1から4のいずれか一項に記載のマイクロアコースティック部品(MAC)。
- さらなる機能性音響領域およびさらなるカバー(CAP2)を含んでいるマイクロアコースティック部品(MAC)であって、
前記カバー(CAP)および前記さらなるカバー(CAP2)から選択された一方のカバー(CAP)が、それが属する前記機能性音響領域(FAS)の上方の空洞(CAV)を取り囲んでおり、かつ
それぞれもう一方の前記カバー(CAP2)が、それが属する前記機能性音響領域の上方で直接的に、空洞を取り囲むことなく配置されている、
請求項1から5のいずれか一項に記載のマイクロアコースティック部品(MAC)。 - 前記カバー(CAP)に開口部(O)が構造化されており、これにより前記機能性音響領域(FAS)が前記マイクロアコースティック部品(MAC)の周囲と接触している、請求項1から6のいずれか一項に記載のマイクロアコースティック部品(MAC)。
- 請求項1から7のいずれか一項に記載のマイクロアコースティック部品(MAC)の製造方法であって、
支持基板(SU)を準備するステップ、
前記基板(SU)の内部、上面、または上方の前記機能性音響領域(FAS)内で、マイクロ音波が伝播可能な構造物(ES)を成形するステップ、
前記機能性音響領域(FAS)を覆って犠牲層を配置するステップ、
前記犠牲層を覆って薄膜を堆積させるステップ、
前記薄膜と前記機能性音響領域(FAS)の間の前記犠牲層を除去し、これにより前記フレーム構造が残るステップ
を含んでいる、マイクロアコースティック部品(MAC)の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013102217.0 | 2013-03-06 | ||
DE102013102217.0A DE102013102217B4 (de) | 2013-03-06 | 2013-03-06 | Mikroakustisches Bauelement und Verfahren zur Herstellung |
PCT/EP2014/053350 WO2014135379A1 (de) | 2013-03-06 | 2014-02-20 | Mikroakustisches bauelement und verfahren zur herstellung |
Publications (2)
Publication Number | Publication Date |
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JP2016516326A JP2016516326A (ja) | 2016-06-02 |
JP6200001B2 true JP6200001B2 (ja) | 2017-09-20 |
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JP2015560609A Active JP6200001B2 (ja) | 2013-03-06 | 2014-02-20 | マイクロアコースティック部品および製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9991873B2 (ja) |
JP (1) | JP6200001B2 (ja) |
KR (1) | KR101688361B1 (ja) |
CN (1) | CN105027435B (ja) |
DE (1) | DE102013102217B4 (ja) |
WO (1) | WO2014135379A1 (ja) |
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DE102013102223B4 (de) * | 2013-03-06 | 2014-09-18 | Epcos Ag | Miniaturisiertes Mehrkomponentenbauelement und Verfahren zur Herstellung |
TWI578700B (zh) * | 2015-09-10 | 2017-04-11 | 穩懋半導體股份有限公司 | 聲波元件保護結構及其製造方法 |
DE102016111911A1 (de) * | 2016-06-29 | 2018-01-04 | Snaptrack, Inc. | Bauelement mit Dünnschicht-Abdeckung und Verfahren zur Herstellung |
JP6545772B2 (ja) * | 2017-01-03 | 2019-07-17 | ウィン セミコンダクターズ コーポレーション | 質量調整構造付きバルク音響波共振装置の製造方法 |
WO2019130943A1 (ja) | 2017-12-26 | 2019-07-04 | 株式会社村田製作所 | 弾性波装置および弾性波モジュール |
DE102018112258B4 (de) | 2018-05-22 | 2023-01-05 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Akustofluidische bauelemente und verfahren zu ihrer herstellung |
CN113140883B (zh) * | 2020-01-20 | 2022-08-09 | 开元通信技术(厦门)有限公司 | 射频滤波器的制备方法 |
CN113555493A (zh) * | 2021-07-20 | 2021-10-26 | 甬矽电子(宁波)股份有限公司 | 半导体封装结构和半导体封装方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1512593A (en) * | 1975-03-13 | 1978-06-01 | Murata Manufacturing Co | Elastic surface wave filter |
JPS558191A (en) | 1978-07-05 | 1980-01-21 | Nec Corp | Elastic surface wave device |
JPH07114340B2 (ja) | 1987-01-19 | 1995-12-06 | 株式会社東芝 | 圧電薄膜共振子 |
WO2004105237A1 (ja) * | 2003-05-26 | 2004-12-02 | Murata Manufacturing Co., Ltd. | 圧電電子部品、およびその製造方法、通信機 |
JP4342370B2 (ja) * | 2004-04-19 | 2009-10-14 | 株式会社東芝 | 高周波集積回路装置 |
JP2007036829A (ja) * | 2005-07-28 | 2007-02-08 | Toshiba Corp | 薄膜圧電共振器、フィルタ及び薄膜圧電共振器の製造方法 |
KR100904621B1 (ko) * | 2005-11-04 | 2009-06-25 | 가부시키가이샤 무라타 세이사쿠쇼 | 압전 박막 공진자 |
JP2008035119A (ja) * | 2006-07-27 | 2008-02-14 | Toshiba Corp | 薄膜圧電共振子及びその製造方法 |
JP5258566B2 (ja) * | 2006-08-07 | 2013-08-07 | 京セラ株式会社 | 弾性表面波装置の製造方法 |
JP4889426B2 (ja) * | 2006-09-27 | 2012-03-07 | 京セラ株式会社 | 弾性表面波装置、フィルタ装置および通信装置 |
JP2008182543A (ja) * | 2007-01-25 | 2008-08-07 | Ube Ind Ltd | 薄膜圧電共振器とそれを用いた薄膜圧電フィルタ |
JP2009010122A (ja) | 2007-06-27 | 2009-01-15 | Nikon Corp | マイクロレンズ形成用マスクと、これにより形成された固体撮像素子 |
JP5207547B2 (ja) * | 2009-04-06 | 2013-06-12 | 太陽誘電株式会社 | 電子デバイスおよびその製造方法 |
DE102010005596B4 (de) * | 2010-01-25 | 2015-11-05 | Epcos Ag | Elektroakustischer Wandler mit verringerten Verlusten durch transversale Emission und verbesserter Performance durch Unterdrückung transversaler Moden |
CN103283147B (zh) | 2010-12-24 | 2016-09-21 | 株式会社村田制作所 | 弹性波装置及其制造方法 |
DE102010056562B4 (de) | 2010-12-30 | 2018-10-11 | Snaptrack, Inc. | Elektroakustisches Bauelement und Verfahren zur Herstellung des elektroakustischen Bauelements |
JP5936393B2 (ja) * | 2011-03-07 | 2016-06-22 | トライクイント・セミコンダクター・インコーポレイテッドTriQuint Semiconductor,Inc. | トリミング効果とピストンモードでの不安定性を最小化する音響波導波装置および方法 |
DE102013102206B4 (de) * | 2013-03-06 | 2016-04-07 | Epcos Ag | Bauelement mit gestapelten funktionalen Strukturen und Verfahren zur Herstellung |
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2013
- 2013-03-06 DE DE102013102217.0A patent/DE102013102217B4/de active Active
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KR101688361B1 (ko) | 2016-12-20 |
CN105027435A (zh) | 2015-11-04 |
WO2014135379A1 (de) | 2014-09-12 |
US20160020749A1 (en) | 2016-01-21 |
KR20150122785A (ko) | 2015-11-02 |
JP2016516326A (ja) | 2016-06-02 |
US9991873B2 (en) | 2018-06-05 |
DE102013102217B4 (de) | 2015-11-12 |
CN105027435B (zh) | 2018-11-13 |
DE102013102217A1 (de) | 2014-09-11 |
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