JP4324182B2 - 薄膜バルク音響共振器および表面音響波共振器が集積された集積フィルタおよびその製造方法 - Google Patents
薄膜バルク音響共振器および表面音響波共振器が集積された集積フィルタおよびその製造方法 Download PDFInfo
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- JP4324182B2 JP4324182B2 JP2006164001A JP2006164001A JP4324182B2 JP 4324182 B2 JP4324182 B2 JP 4324182B2 JP 2006164001 A JP2006164001 A JP 2006164001A JP 2006164001 A JP2006164001 A JP 2006164001A JP 4324182 B2 JP4324182 B2 JP 4324182B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000010897 surface acoustic wave method Methods 0.000 title description 4
- 239000010409 thin film Substances 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/588—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H2003/0071—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of bulk acoustic wave and surface acoustic wave elements in the same process
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
図1は本発明の一実施の形態にかかる集積フィルタの構成を示す垂直断面図である。同
図によると、本集積フィルタは、基板110、第1電極120、第1圧電層130、第2
圧電層140、第2IDT電極170、第1空洞部180、第2空洞部185、第1ない
し第4パッド191ないし194を含んでなる。
基板110の上部表面上の所定第1領域には第1電極120が位置する。
第1電極120はメタルのような導電性物質からなる。
第1電極120および周辺基板110の領域上には第1圧電層130が位置する。この場合、第1圧電層130は第1電極120の上部にのみ位置することができるが、図1に示すように、第1電極120周辺の基板110領域まで延長製造して、基板110によって支持され得るようにすることが好ましい。
第1電極120、第1圧電層130、第2電極150はFBARを具現する。この場合、第1領域の下部基板110をエッチングして第1空洞部180を製造し、エアギャップ型FBARの形態で具現できる。これによって、第1電極120および第2電極150に電源が接続されると、第1圧電層130が圧電現象を引き起こして基板の表面に垂直方向に向って共振される。共振時に発生する音響波は第1空洞部180によって反射されて共振特性を向上させることができる。
即ち、同図において、第2電極150の下部には第1圧電層130および第1電極120が位置し、FBARを具現する。第1電極120には第1パッド191が接続され、第2電極150には第2パッド192が接続される。
図3Aにおいて、基板110上の所定の第1領域上には第1電極120を製造する。詳細には、メタルのような導電性物質を積層してからパターニングを行なう方式に基づいて第1電極120が製造される。
120…第1電極
130…第1圧電層
140…第2圧電層
150…第2電極
160…第1IDT電極
170…第2IDT電極
180…第1空洞部
185…第2空洞部
191…第1パッド
192…第2パッド
193…第3パッド
194…第4パッド
Claims (2)
- 基板上の所定第1領域に第1電極を製造するステップと、
前記基板上に圧電物質を積層した後パターニングを行ない、前記第1電極上に位置する
第1圧電層および第2基板上の所定第2領域に位置する第2圧電層を製造するステッ
プと、
前記基板上に導電性物質を積層した後パターニングを行ない、前記第1圧電層上に位置
した第2電極および前記第2圧電層上に位置したIDT電極を製造するステップと、
前記第1領域および第2領域の下部基板をエッチングし空洞部を製造するステップと
を含むことを特徴とする集積フィルタの製造方法。 - 前記IDT電極が、コーム構造でパターニングされた第1IDT電極および前記第1I
DT電極と噛み合ったコーム構造でパターニングされた第2IDT電極を含むことを特徴とする請求項1に記載の集積フィルタの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050068486A KR100631217B1 (ko) | 2005-07-27 | 2005-07-27 | 박막 벌크 음향 공진기 및 표면 음향파 공진기가 집적된인티그레이티드 필터 및 그 제작 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007037102A JP2007037102A (ja) | 2007-02-08 |
JP4324182B2 true JP4324182B2 (ja) | 2009-09-02 |
Family
ID=37307428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006164001A Active JP4324182B2 (ja) | 2005-07-27 | 2006-06-13 | 薄膜バルク音響共振器および表面音響波共振器が集積された集積フィルタおよびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7439825B2 (ja) |
EP (1) | EP1748557A3 (ja) |
JP (1) | JP4324182B2 (ja) |
KR (1) | KR100631217B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109257027A (zh) * | 2018-10-30 | 2019-01-22 | 开元通信技术(厦门)有限公司 | 一种混合声波谐振器及其制备方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100719123B1 (ko) * | 2006-07-27 | 2007-05-18 | 삼성전자주식회사 | 멀피 밴드 필터모듈 및 그 제조방법 |
US7982363B2 (en) * | 2007-05-14 | 2011-07-19 | Cree, Inc. | Bulk acoustic device and method for fabricating |
US7768367B2 (en) * | 2008-02-26 | 2010-08-03 | Dosun Solar Technology Co., Ltd. | Circular magnetic switch |
JP4586897B2 (ja) * | 2008-06-24 | 2010-11-24 | 株式会社村田製作所 | 分波器 |
WO2010007805A1 (ja) * | 2008-07-17 | 2010-01-21 | 株式会社 村田製作所 | 分波器 |
FR2951336B1 (fr) * | 2009-10-09 | 2017-02-10 | Commissariat A L'energie Atomique | Dispositif a ondes acoustiques comprenant un filtre a ondes de surface et un filtre a ondes de volume et procede de fabrication |
JP2013223025A (ja) * | 2012-04-13 | 2013-10-28 | Taiyo Yuden Co Ltd | フィルタ装置、フィルタ装置の製造方法及びデュプレクサ |
WO2014099291A1 (en) * | 2012-12-18 | 2014-06-26 | Borgwarner Inc. | Tensioner with spring force control in a second bore |
CN107078713B (zh) | 2014-09-30 | 2021-10-26 | 株式会社村田制作所 | 梯型滤波器 |
KR101867285B1 (ko) * | 2016-09-21 | 2018-07-19 | 삼성전기주식회사 | 음향 공진기 및 필터 |
KR20180064168A (ko) * | 2016-12-05 | 2018-06-14 | 삼성전기주식회사 | 탄성파 필터 장치 및 이의 제조방법 |
SG10201902753RA (en) * | 2018-04-12 | 2019-11-28 | Skyworks Solutions Inc | Filter Including Two Types Of Acoustic Wave Resonators |
CN111371429B (zh) * | 2018-12-26 | 2022-07-12 | 中芯集成电路(宁波)有限公司上海分公司 | 控制电路与声波滤波器的集成方法和集成结构 |
DE112020001765T5 (de) * | 2019-04-05 | 2021-12-23 | Resonant Inc. | Packung eines transversal angeregten akustischen Filmvolumenresonators und Verfahren |
US20220407494A1 (en) * | 2019-11-25 | 2022-12-22 | Epicmems(Xiamen) Co., Ltd. | Acoustic wave device and method of manufacturing the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6424238B1 (en) * | 2001-01-08 | 2002-07-23 | Motorola, Inc. | Acoustic wave filter and method of forming the same |
US6710681B2 (en) * | 2001-07-13 | 2004-03-23 | Agilent Technologies, Inc. | Thin film bulk acoustic resonator (FBAR) and inductor on a monolithic substrate and method of fabricating the same |
TW540173B (en) * | 2002-05-03 | 2003-07-01 | Asia Pacific Microsystems Inc | Bulk acoustic device having integrated fine-tuning and trimming devices |
EP1469599B1 (en) * | 2003-04-18 | 2010-11-03 | Samsung Electronics Co., Ltd. | Air gap type FBAR, duplexer using the FBAR, and fabricating methods thereof |
JP4010504B2 (ja) * | 2003-06-04 | 2007-11-21 | 日立金属株式会社 | マルチバンド用送受信機およびそれを用いた無線通信機 |
JP3993579B2 (ja) * | 2004-04-28 | 2007-10-17 | 富士通メディアデバイス株式会社 | バランス出力型フィルタ |
-
2005
- 2005-07-27 KR KR1020050068486A patent/KR100631217B1/ko active IP Right Grant
-
2006
- 2006-06-08 US US11/448,707 patent/US7439825B2/en active Active
- 2006-06-13 JP JP2006164001A patent/JP4324182B2/ja active Active
- 2006-06-21 EP EP06012762A patent/EP1748557A3/en not_active Withdrawn
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109257027A (zh) * | 2018-10-30 | 2019-01-22 | 开元通信技术(厦门)有限公司 | 一种混合声波谐振器及其制备方法 |
CN109257027B (zh) * | 2018-10-30 | 2020-06-30 | 开元通信技术(厦门)有限公司 | 一种混合声波谐振器及其制备方法 |
US10958236B2 (en) | 2018-10-30 | 2021-03-23 | Epic Mems (Xiamen) Co., Ltd | Hybrid acoustic wave resonator and preparation method therefor |
Also Published As
Publication number | Publication date |
---|---|
US7439825B2 (en) | 2008-10-21 |
KR100631217B1 (ko) | 2006-10-04 |
EP1748557A2 (en) | 2007-01-31 |
EP1748557A3 (en) | 2012-05-23 |
US20070024396A1 (en) | 2007-02-01 |
JP2007037102A (ja) | 2007-02-08 |
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