JP6197325B2 - Manufacturing method of electronic device - Google Patents

Manufacturing method of electronic device Download PDF

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JP6197325B2
JP6197325B2 JP2013067323A JP2013067323A JP6197325B2 JP 6197325 B2 JP6197325 B2 JP 6197325B2 JP 2013067323 A JP2013067323 A JP 2013067323A JP 2013067323 A JP2013067323 A JP 2013067323A JP 6197325 B2 JP6197325 B2 JP 6197325B2
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terminal
solder
electrode
electronic component
layer
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JP2014192380A (en
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浩三 清水
浩三 清水
作山　誠樹
誠樹 作山
赤松　俊也
俊也 赤松
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Fujitsu Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

本発明は、電子装置の製造方法に関する。   The present invention relates to an electronic device manufacturing method.

電子部品の端子間を、接合材を用いて接合し、電気的に接続する技術が知られている。接合材として、１種又は２種以上の成分を含む半田のほか、樹脂組成物に半田等の導電性粒子を含有したもの等が知られている。   A technique is known in which terminals of electronic components are joined and electrically connected using a joining material. As a bonding material, in addition to solder containing one or more components, a resin composition containing conductive particles such as solder is known.

特開２００７−２４２７８３号公報JP 2007-242783 A 特開２０１１−００５５２１号公報JP 2011-005521 A 特開２０１０−０４０８９３号公報JP 2010-040893 A

電子部品の端子間の接合部には、振動、衝撃といった外力や、電子部品間の熱膨張係数差に起因して生じる熱応力によって、クラック、剥離、断線等の接続不良が発生する場合がある。   In joints between terminals of electronic components, connection failure such as cracks, peeling, disconnection, etc. may occur due to external forces such as vibration and impact and thermal stress caused by differences in thermal expansion coefficient between electronic components. .

本発明の一観点によれば、第１端子を備える第１電子部品と、第２端子を備える第２電子部品の、前記第１端子と前記第２端子のうちいずれか一方に第１元素を含む第１元素層が内層に設けられた前記第１端子と前記第２端子とを接合材を用いて接合する工程と、接合された前記第１端子と前記第２端子との間に通電して前記第１元素を前記接合材に移動させる工程とを含む電子装置の製造方法が提供される。 According to one aspect of the present invention, a first electronic component having a first terminal, a second electronic component having a second terminal, the first terminal and the first element in either one of the second terminal A step of joining the first terminal and the second terminal provided with an inner layer of the first element layer using a joining material; and energizing between the joined first terminal and the second terminal. And a step of moving the first element to the bonding material.

開示の技術によれば、接合材を用いて接合した端子間に通電し、一方の端子に含まれる所定の元素を接合材に移動させることで、接合材の組成を変化させることが可能になる。これにより、端子間の接合部の強度を向上させ、断線等の接続不良の発生を抑制し、電子部品間の接続信頼性に優れる電子装置を実現することが可能になる。   According to the disclosed technology, it is possible to change the composition of the bonding material by energizing between the terminals bonded using the bonding material and moving a predetermined element contained in one terminal to the bonding material. . As a result, it is possible to improve the strength of the joint portion between the terminals, suppress the occurrence of connection failure such as disconnection, and realize an electronic device excellent in connection reliability between electronic components.

第１の実施の形態に係る電子装置の製造方法の一例を示す図である。It is a figure which shows an example of the manufacturing method of the electronic device which concerns on 1st Embodiment. 第１の実施の形態に係る電子装置の一例を示す図である。It is a figure which shows an example of the electronic device which concerns on 1st Embodiment. 第１の実施の形態に係る電子装置の別例を示す図である。It is a figure which shows another example of the electronic device which concerns on 1st Embodiment. 第１の実施の形態に係る電子装置の変形例を示す図である。It is a figure which shows the modification of the electronic device which concerns on 1st Embodiment. 第１の実施の形態に係る電子装置の製造方法の変形例を示す図である。It is a figure which shows the modification of the manufacturing method of the electronic device which concerns on 1st Embodiment. 第２の実施の形態に係る電子装置の製造方法の一例を示す図である。It is a figure which shows an example of the manufacturing method of the electronic device which concerns on 2nd Embodiment. 第３の実施の形態に係る電子装置の製造方法の一例を示す図である。It is a figure which shows an example of the manufacturing method of the electronic device which concerns on 3rd Embodiment. 第４の実施の形態に係る電子装置の製造方法の一例を示す図である。It is a figure which shows an example of the manufacturing method of the electronic device which concerns on 4th Embodiment. 第５の実施の形態に係る電子装置の製造方法の一例を示す図である。It is a figure which shows an example of the manufacturing method of the electronic device which concerns on 5th Embodiment. 第６の実施の形態に係る電子装置の製造方法の一例を示す図である。It is a figure which shows an example of the manufacturing method of the electronic device which concerns on 6th Embodiment.

まず、第１の実施の形態について説明する。
図１は第１の実施の形態に係る電子装置の製造方法の一例を示す図である。図１（Ａ）〜図１（Ｃ）には、第１の実施の形態に係る電子装置の各製造工程の要部断面を模式的に図示している。 First, the first embodiment will be described.
FIG. 1 is a diagram illustrating an example of a method of manufacturing an electronic device according to the first embodiment. FIG. 1A to FIG. 1C schematically show a cross-section of the main part of each manufacturing process of the electronic device according to the first embodiment.

まず、図１（Ａ）に示すように、接合する電子部品２０及び電子部品３０を準備する。電子部品２０は、例えば、半導体素子（半導体チップ）、半導体チップを回路基板（パッケージ基板）に実装した半導体装置（半導体パッケージ）、又は回路基板（プリント基板、インターポーザ等）とすることができる。電子部品３０も同様に、半導体チップ、半導体パッケージ、又は回路基板とすることができる。   First, as shown in FIG. 1A, an electronic component 20 and an electronic component 30 to be joined are prepared. The electronic component 20 can be, for example, a semiconductor element (semiconductor chip), a semiconductor device (semiconductor package) in which the semiconductor chip is mounted on a circuit board (package board), or a circuit board (printed board, interposer, etc.). Similarly, the electronic component 30 can be a semiconductor chip, a semiconductor package, or a circuit board.

電子部品２０は、その一方の面（電子部品３０と対向する面）に設けられた端子（電極）２１を有している。端子２１は、例えば、銅（Ｃｕ）又はＣｕを含む材料を用いて形成される。端子２１は、例えば、めっき法を用いて形成することができる。尚、図１（Ａ）には１つの端子２１を例示するが、電子部品２０には、複数の端子２１が設けられてもよい。端子２１は、電子部品２０の外部接続端子２１Ａとなる。   The electronic component 20 has a terminal (electrode) 21 provided on one surface thereof (a surface facing the electronic component 30). The terminal 21 is formed using, for example, copper (Cu) or a material containing Cu. The terminal 21 can be formed using, for example, a plating method. Although FIG. 1A illustrates one terminal 21, the electronic component 20 may be provided with a plurality of terminals 21. The terminal 21 becomes the external connection terminal 21 </ b> A of the electronic component 20.

電子部品２０の端子２１上には、電子部品３０との接合に用いる接合材として、半田５０が設けられている。半田５０には、例えば、錫（Ｓｎ）又はＳｎを含む半田が用いられる。半田５０は、例えば、端子２１上に半田ボールを搭載し、所定温度でリフローを行うことで、設けることができる。   Solder 50 is provided on the terminal 21 of the electronic component 20 as a bonding material used for bonding to the electronic component 30. For the solder 50, for example, a solder containing tin (Sn) or Sn is used. The solder 50 can be provided, for example, by mounting solder balls on the terminals 21 and performing reflow at a predetermined temperature.

電子部品３０は、その一方の面（電子部品２０と対向する面）に設けられた端子（電極）３１を有している。電子部品３０の端子３１は、電子部品２０の端子２１と対応する位置に設けられている。端子３１は、例えば、Ｃｕ又はＣｕを含む材料を用いて形成される。端子３１は、例えば、めっき法を用いて形成することができる。尚、図１（Ａ）には１つの端子３１を例示するが、電子部品３０には、複数の端子３１が設けられてもよい。   The electronic component 30 has a terminal (electrode) 31 provided on one surface thereof (a surface facing the electronic component 20). The terminal 31 of the electronic component 30 is provided at a position corresponding to the terminal 21 of the electronic component 20. The terminal 31 is formed using, for example, Cu or a material containing Cu. The terminal 31 can be formed using, for example, a plating method. Although FIG. 1A illustrates one terminal 31, the electronic component 30 may be provided with a plurality of terminals 31.

電子部品３０の端子３１上には、所定の元素を含む元素層４０が設けられている。元素層４０には、半田５０内に含まれることでその半田５０の特性、例えば弾性率等の機械的特性を変化させることのできる元素を含む材料が用いられる。例えば、元素層４０には、半田５０内に含まれてその半田５０の組織を変化させる元素を含む材料、半田５０内に含まれてその半田５０と反応し金属間化合物（InterMetallic Compound；ＩＭＣ）を形成する元素を含む材料が用いられる。そのような元素としては、ニッケル（Ｎｉ）、コバルト（Ｃｏ）、タングステン（Ｗ）、金（Ａｕ）、銀（Ａｇ）、Ｃｕ等が挙げられる。元素層４０は、例えば、電子部品３０の端子３１上に、めっき法を用いて形成することができる。   An element layer 40 containing a predetermined element is provided on the terminal 31 of the electronic component 30. The element layer 40 is made of a material containing an element that can be included in the solder 50 to change characteristics of the solder 50, for example, mechanical characteristics such as elastic modulus. For example, the element layer 40 includes a material containing an element that is contained in the solder 50 and changes the structure of the solder 50, and is contained in the solder 50 and reacts with the solder 50 to form an intermetallic compound (IMC). A material containing an element that forms the film is used. Examples of such elements include nickel (Ni), cobalt (Co), tungsten (W), gold (Au), silver (Ag), and Cu. The element layer 40 can be formed on the terminal 31 of the electronic component 30 by using a plating method, for example.

端子３１とその上に設けられた元素層４０は、電子部品３０の外部接続端子３１Ａとなる。
上記のような電子部品２０及び電子部品３０を準備し、図１（Ａ）に示すように、半田５０が設けられた端子２１と、元素層４０が設けられた端子３１とを対向させ、位置合わせを行う。そして、半田５０が溶融する温度で熱処理を行い、電子部品２０を電子部品３０側に、又は電子部品３０を電子部品２０側に押圧し、その後、冷却して半田５０を固化する。これにより、図１（Ｂ）に示すように、電子部品２０の端子２１と、元素層４０を設けた電子部品３０の端子３１とを、半田５０を介して接合し（接合部５１）、電気的に接続する。 The terminal 31 and the element layer 40 provided thereon serve as an external connection terminal 31A of the electronic component 30.
The electronic component 20 and the electronic component 30 as described above are prepared, and the terminal 21 provided with the solder 50 and the terminal 31 provided with the element layer 40 are opposed to each other as shown in FIG. Align. Then, heat treatment is performed at a temperature at which the solder 50 melts, the electronic component 20 is pressed toward the electronic component 30 or the electronic component 30 is pressed toward the electronic component 20, and then cooled to solidify the solder 50. As a result, as shown in FIG. 1B, the terminal 21 of the electronic component 20 and the terminal 31 of the electronic component 30 provided with the element layer 40 are bonded via the solder 50 (bonding portion 51). Connect.

このように電子部品２０と電子部品３０を、半田５０を用いて接合した後、図１（Ｃ）に示すように、電源７０を用いて互いの端子２１と端子３１の間に通電する。この例では、電子部品２０の端子２１側をアノードとし、電子部品３０の端子３１側をカソードとして、端子２１と端子３１の間に通電する。この通電時の電子（電流）の流れにより、元素層４０に含まれる所定の元素４０ａを、半田５０内に移動させる（エレクトロマイグレーション）。   After the electronic component 20 and the electronic component 30 are joined using the solder 50 as described above, current is passed between the terminals 21 and 31 using the power source 70 as shown in FIG. In this example, the terminal 21 side of the electronic component 20 is used as an anode, and the terminal 31 side of the electronic component 30 is used as a cathode. The predetermined element 40a included in the element layer 40 is moved into the solder 50 (electromigration) by the flow of electrons (current) during energization.

この時の通電条件、例えば電流密度及び通電時間は、元素層４０に含まれる元素４０ａがエレクトロマイグレーションによって半田５０内に移動するような値に設定する。通電は、端子２１に電気的に接続された電子部品２０内の導電部（端子２１を含む回路）、及び端子３１に電気的に接続された電子部品３０内の導電部（端子３１を含む回路）を利用して、行うことができる。   The energization conditions at this time, for example, the current density and the energization time, are set to values such that the element 40a included in the element layer 40 moves into the solder 50 by electromigration. The energization is performed by a conductive portion (a circuit including the terminal 21) in the electronic component 20 electrically connected to the terminal 21 and a conductive portion (a circuit including the terminal 31) in the electronic component 30 electrically connected to the terminal 31. ) Can be used.

このように、半田５０を用いて接合した後の端子２１と端子３１の間に通電することで、元素層４０からそれに含まれる元素４０ａを半田５０内に移動させる。これにより、互いの端子２１と端子３１が、元素４０ａを含む半田５０の接合部５１によって接合され、電気的に接続された、電子部品２０及び電子部品３０を備える電子装置を得る。   In this way, the element 40 a included in the element layer 40 is moved from the element layer 40 into the solder 50 by energizing between the terminal 21 and the terminal 31 after being joined using the solder 50. Thereby, the mutual terminal 21 and the terminal 31 are joined by the joint portion 51 of the solder 50 containing the element 40a, and an electronic device including the electronic component 20 and the electronic component 30 is obtained.

図２は第１の実施の形態に係る電子装置の一例を示す図である。図２には、第１の実施の形態に係る電子装置の一例の要部断面を模式的に図示している。
図２に示す電子装置１０は、上記図１に例示した方法を用いて接合された電子部品２０及び電子部品３０を有している。電子部品２０の端子２１と電子部品３０の端子３１との接合部５１は、上記のように半田５０を用いて接合した後の通電によって所定量の元素４０ａが添加された構造を有する接合部５１ａになっている。例えば、このように半田５０に所定量の元素４０ａを添加することで、半田５０の組織を微細化し、伸び特性の向上、弾性率の低減が図られた接合部５１ａを得ることができる。上記図１に例示した方法を用いることで、電子部品２０と電子部品３０の接合部５１ａの機械的強度に優れ、接合信頼性の高い電子装置１０を得ることができる。 FIG. 2 is a diagram illustrating an example of an electronic device according to the first embodiment. FIG. 2 schematically illustrates a cross-section of a main part of an example of the electronic device according to the first embodiment.
An electronic device 10 illustrated in FIG. 2 includes an electronic component 20 and an electronic component 30 that are bonded using the method illustrated in FIG. The joint 51 between the terminal 21 of the electronic component 20 and the terminal 31 of the electronic component 30 has a structure in which a predetermined amount of the element 40a is added by energization after joining using the solder 50 as described above. It has become. For example, by adding a predetermined amount of the element 40a to the solder 50 in this way, it is possible to obtain a joint 51a in which the structure of the solder 50 is refined, the elongation characteristics are improved, and the elastic modulus is reduced. By using the method illustrated in FIG. 1, it is possible to obtain the electronic device 10 that is excellent in mechanical strength of the joint portion 51a between the electronic component 20 and the electronic component 30 and has high joining reliability.

上記のような通電による元素４０ａの移動によらず、元素４０ａに相当する元素を予め半田内に添加しようとした場合、その元素の融点が半田に比べて十分に高いと、半田作製時には、その元素の融点を上回るような高温の熱処理が必要になる。元素の融点が高いことで、一定量（例えば０．００５ｗｔ％以上）の元素を半田内に添加することが難しい場合もある。また、一定量の元素を半田内に添加することができたとしても、それによって半田の融点が上昇するため、半田付け性が低下する場合がある。   Regardless of the movement of the element 40a caused by energization as described above, if an element corresponding to the element 40a is to be added to the solder in advance, if the melting point of the element is sufficiently higher than that of the solder, Heat treatment at a high temperature exceeding the melting point of the element is required. Due to the high melting point of the element, it may be difficult to add a certain amount (for example, 0.005 wt% or more) of the element into the solder. Further, even if a certain amount of element can be added into the solder, the melting point of the solder increases thereby, so that the solderability may deteriorate.

一方、上記図１に例示する方法では、半田５０を用いて端子２１と端子３１を接合する際（図１（Ａ）及び図１（Ｂ））、用いる半田５０の融点に応じた温度の熱処理を行う。そして、半田５０を用いて接合した後、端子２１と端子３１の間に通電し、元素層４０から半田５０内に元素４０ａを移動させる（図１（Ｃ））。そのため、図２に示すような端子２１と端子３１を接合部５１ａで接合した電子装置１０を得るために、上記のように予め半田作製時に所定の元素を添加する時のような高温の熱処理を行うことを要しない。また、端子２１と端子３１を半田５０で接合した後、通電により元素４０ａを半田５０内に移動させて接合部５１ａを形成するため、上記のように予め所定の元素を添加することによって融点が上昇した半田を使用することを要しない。そのような半田を使用することによる半田付け性の低下といった問題も回避することができる。   On the other hand, in the method illustrated in FIG. 1, when the terminal 21 and the terminal 31 are joined using the solder 50 (FIGS. 1A and 1B), heat treatment at a temperature corresponding to the melting point of the solder 50 used. I do. And after joining using the solder 50, it supplies with electricity between the terminal 21 and the terminal 31, and the element 40a is moved in the solder 50 from the element layer 40 (FIG.1 (C)). Therefore, in order to obtain the electronic device 10 in which the terminal 21 and the terminal 31 are joined at the joint portion 51a as shown in FIG. There is no need to do it. Further, after joining the terminal 21 and the terminal 31 with the solder 50, the element 40a is moved into the solder 50 by energization to form the joint portion 51a. Therefore, the melting point is reduced by adding a predetermined element in advance as described above. There is no need to use elevated solder. Problems such as a decrease in solderability due to the use of such solder can also be avoided.

尚、半田５０による接合後、端子２１と端子３１の間の通電によって元素層４０から元素４０ａを移動させる際（図１（Ｃ））には、半田５０が溶融しない温度で熱処理を行いながら、通電してもよい。例えば、半田５０による接合後、１００℃〜１５０℃といった温度で熱処理を行いながら、端子２１と端子３１の間に通電する。このように熱処理を行いながら通電することで、元素層４０からの元素４０ａの移動を促進させ、半田５０内に元素４０ａを効率的に添加することが可能になる。   When the element 40a is moved from the element layer 40 by energization between the terminal 21 and the terminal 31 after joining with the solder 50 (FIG. 1C), while performing heat treatment at a temperature at which the solder 50 does not melt, It may be energized. For example, after joining with the solder 50, the terminal 21 and the terminal 31 are energized while performing heat treatment at a temperature of 100 ° C. to 150 ° C. By energizing while performing heat treatment in this way, the movement of the element 40a from the element layer 40 is promoted, and the element 40a can be efficiently added into the solder 50.

また、半田５０を用いて接合した端子２１と端子３１の間に通電して元素層４０から元素４０ａを移動させた後（図１（Ｃ）或いは図２）に、半田５０が溶融しない温度、或いは半田５０が溶融する温度で、熱処理を行うようにしてもよい。このように元素４０ａを移動させた後に熱処理を行うことで、元素４０ａを含む半田５０の結晶構造を安定化或いは再構成させたり、半田５０とそれに含まれる元素４０ａとを反応させてＩＭＣを形成したりすることが可能になる。   Further, after the element 40a is moved from the element layer 40 by energizing between the terminal 21 and the terminal 31 joined using the solder 50 (FIG. 1C or FIG. 2), the temperature at which the solder 50 does not melt, Alternatively, the heat treatment may be performed at a temperature at which the solder 50 is melted. By performing heat treatment after moving the element 40a in this way, the crystal structure of the solder 50 containing the element 40a is stabilized or reconfigured, or the solder 50 and the element 40a contained therein are reacted to form an IMC. It becomes possible to do.

図３は第１の実施の形態に係る電子装置の別例を示す図である。図３には、第１の実施の形態に係る電子装置の別例の要部断面を模式的に図示している。
図３に示す電子装置１０は、上記図１に例示した方法を用いて接合された電子部品２０及び電子部品３０を有している。この図３に示す電子装置１０の端子２１と端子３１の接合部５１は、上記図１（Ｃ）のように半田５０で接合した後の通電によって元素層４０から移動した元素４０ａと、半田５０との反応により形成されたＩＭＣの接合部５１ｂになっている。 FIG. 3 is a diagram illustrating another example of the electronic device according to the first embodiment. FIG. 3 schematically illustrates a cross-section of a main part of another example of the electronic device according to the first embodiment.
The electronic device 10 illustrated in FIG. 3 includes an electronic component 20 and an electronic component 30 that are bonded using the method illustrated in FIG. The joint portion 51 between the terminal 21 and the terminal 31 of the electronic device 10 shown in FIG. 3 includes an element 40a that has moved from the element layer 40 due to energization after joining with the solder 50 as shown in FIG. The IMC junction 51b is formed by the reaction of

このようなＩＭＣの接合部５１ｂは、半田５０を用いて端子２１と端子３１を接合した後の通電時に、例えば半田５０が溶融しない温度で、熱処理を行うことで、形成することができる。或いは、ＩＭＣの接合部５１ｂは、半田５０を用いて接合した端子２１と端子３１の間に通電した後に、例えば半田５０が溶融しない温度又は溶融する温度で、熱処理を行うことで、形成することができる。また、ＩＭＣの接合部５１ｂを形成する際には、熱処理温度のほか、熱処理時間も調整する。   Such an IMC joint 51b can be formed by performing a heat treatment at a temperature at which the solder 50 does not melt, for example, when energizing after joining the terminal 21 and the terminal 31 using the solder 50. Alternatively, the IMC joint 51b is formed by conducting a heat treatment at a temperature at which the solder 50 does not melt or at a temperature at which the solder 50 melts after energization between the terminal 21 and the terminal 31 joined using the solder 50, for example. Can do. When forming the IMC joint 51b, the heat treatment time is adjusted in addition to the heat treatment temperature.

接合部５１ｂをＩＭＣにすることで、電子部品２０と電子部品３０の接合強度を高め、また、電子装置１０の動作時に流れる電流に対して半田成分の拡散が抑えられる安定な接合部５１ｂが形成可能になる。その結果、接合信頼性の高い電子装置１０を得ることができる。   By using the IMC as the bonding portion 51b, the bonding strength between the electronic component 20 and the electronic component 30 is increased, and a stable bonding portion 51b that suppresses the diffusion of the solder component with respect to the current that flows during the operation of the electronic device 10 is formed. It becomes possible. As a result, the electronic device 10 having high bonding reliability can be obtained.

以上述べた電子装置１０の製造方法においては、形成する接合部５１（５１ａ，５１ｂ）の組成に基づき、元素層４０の膜厚、或いは元素層４０内の元素４０ａの含有量を設定することができる。   In the method for manufacturing the electronic device 10 described above, the film thickness of the element layer 40 or the content of the element 40a in the element layer 40 can be set based on the composition of the junction 51 (51a, 51b) to be formed. it can.

また、形成する接合部５１（５１ａ，５１ｂ）の組成に基づき、元素層４０から半田５０内への元素４０ａの移動量を、通電時の電流密度、通電時間、通電時若しくは通電後に熱処理を行う場合にはその熱処理の温度や時間によって、調整することができる。   Further, based on the composition of the joint 51 (51a, 51b) to be formed, the amount of movement of the element 40a from the element layer 40 into the solder 50 is subjected to heat treatment during current flow, current flow time, current flow time, or after current flow. In some cases, the temperature can be adjusted according to the temperature and time of the heat treatment.

また、接合部５１（５１ａ，５１ｂ）には、元素層４０に含まれる元素４０ａのほか、端子３１に含まれる元素（例えばＣｕ）がエレクトロマイグレーションにより移動して含まれていてもよい。   In addition to the element 40a included in the element layer 40, the junction 51 (51a, 51b) may include an element (for example, Cu) included in the terminal 31 that is moved by electromigration.

続いて、変形例について述べる。
図４は第１の実施の形態に係る電子装置の変形例を示す図である。図４には、第１の実施の形態に係る電子装置の変形例の要部断面を模式的に図示している。 Next, modified examples will be described.
FIG. 4 is a diagram illustrating a modification of the electronic device according to the first embodiment. FIG. 4 schematically shows a cross-section of the main part of a modification of the electronic device according to the first embodiment.

上記図２及び図３には、半田５０を用いた接合後の通電によって接合部５１（５１ａ，５１ｂ）を形成した後に、端子３１上から元素層４０が消失した状態になっている場合を例示した。端子３１上に設けた元素層４０の元素４０ａが全て半田５０内に移動した場合、上記図２及び図３に例示するような状態になる。   2 and 3 exemplify a case where the element layer 40 has disappeared from the terminal 31 after the joint portion 51 (51a, 51b) is formed by energization after joining using the solder 50. did. When all the elements 40a of the element layer 40 provided on the terminal 31 have moved into the solder 50, the state illustrated in FIGS.

このほか、半田５０を用いた接合後の通電によって接合部５１（５１ａ，５１ｂ）を形成した後には、図４に例示するように、端子３１上に元素層４０の一部が残存した状態になっていてもよい。端子３１上に設けた元素層４０の元素４０ａのうち、一部が半田５０内に移動した場合には、この図４に例示するような状態になる。端子３１上に元素層４０の一部が残存していても、元素層４０に導電性を示す材料を用いることで、接合部５１を介した端子２１と端子３１の間の導通を確保することができる。   In addition, after the joining portion 51 (51a, 51b) is formed by energization after joining using the solder 50, a part of the element layer 40 remains on the terminal 31 as illustrated in FIG. It may be. When a part of the element 40a of the element layer 40 provided on the terminal 31 moves into the solder 50, the state illustrated in FIG. Even when a part of the element layer 40 remains on the terminal 31, by using a material exhibiting conductivity for the element layer 40, electrical conduction between the terminal 21 and the terminal 31 through the junction 51 is ensured. Can do.

図５は第１の実施の形態に係る電子装置の製造方法の変形例を示す図である。図５（Ａ）及び図５（Ｂ）には、第１の実施の形態に係る電子装置の各製造工程の要部断面を模式的に図示している。   FIG. 5 is a diagram showing a modification of the method for manufacturing the electronic device according to the first embodiment. FIGS. 5A and 5B schematically show a cross section of the main part of each manufacturing process of the electronic device according to the first embodiment.

この図５に示す方法では、上記図１（Ｂ）のように、端子２１と、元素層４０を設けた端子３１とを、半田５０を介して接合した後に、図５（Ａ）に示すように、電子部品２０と電子部品３０の間に、それらを接着する接着材６０を設ける。例えば、接着材６０には、エポキシ樹脂等の樹脂材料を用いることができる。尚、接合された半導体チップとパッケージ基板の間に設ける接着材６０、接合された半導体パッケージと回路基板の間に設ける接着材６０として、所謂アンダーフィル材が知られている。   In the method shown in FIG. 5, as shown in FIG. 1B, after the terminal 21 and the terminal 31 provided with the element layer 40 are joined via the solder 50, as shown in FIG. In addition, an adhesive 60 is provided between the electronic component 20 and the electronic component 30 to bond them. For example, the adhesive 60 can be a resin material such as an epoxy resin. A so-called underfill material is known as the adhesive 60 provided between the bonded semiconductor chip and the package substrate and the adhesive 60 provided between the bonded semiconductor package and the circuit substrate.

図５（Ａ）に示すように、端子２１と端子３１を接合し、電子部品２０と電子部品３０の間に接着材６０を設けた後に、図５（Ｂ）に示すように、電源７０を用いて端子２１と端子３１の間に通電する。その際は、電子部品２０の端子２１側をアノードとし、電子部品３０の端子３１側をカソードとして、端子２１と端子３１の間に通電する。この通電により、元素層４０に含まれる元素４０ａを半田５０内に移動させ、端子２１と端子３１を、元素４０ａを所定量添加した接合部５１（５１ａ）、又は半田５０をＩＭＣに変化させた接合部５１（５１ｂ）によって接合する。   As shown in FIG. 5A, after the terminal 21 and the terminal 31 are joined and the adhesive 60 is provided between the electronic component 20 and the electronic component 30, the power source 70 is turned on as shown in FIG. Use to energize between the terminal 21 and the terminal 31. In that case, the terminal 21 side of the electronic component 20 is used as an anode, and the terminal 31 side of the electronic component 30 is used as a cathode, and electricity is supplied between the terminal 21 and the terminal 31. By this energization, the element 40a included in the element layer 40 is moved into the solder 50, and the terminal 21 and the terminal 31 are changed to the joint 51 (51a) to which a predetermined amount of the element 40a is added, or the solder 50 is changed to IMC. It joins by the junction part 51 (51b).

このように、半田５０を用いた接合後に端子２１と端子３１の間に通電して元素４０ａを移動させる方法は、電子部品２０と電子部品３０が接着材６０で接着されている状態でも、行うことが可能である。   As described above, the method of moving the element 40 a by energizing between the terminal 21 and the terminal 31 after joining using the solder 50 is performed even in a state where the electronic component 20 and the electronic component 30 are bonded by the adhesive 60. It is possible.

次に、第２の実施の形態について説明する。
図６は第２の実施の形態に係る電子装置の製造方法の一例を示す図である。図６（Ａ）〜図６（Ｃ）には、第２の実施の形態に係る電子装置の各製造工程の要部断面を模式的に図示している。 Next, a second embodiment will be described.
FIG. 6 is a diagram illustrating an example of a method of manufacturing an electronic device according to the second embodiment. FIGS. 6A to 6C schematically show a cross section of the main part of each manufacturing process of the electronic device according to the second embodiment.

この第２の実施の形態に係る電子装置の製造方法では、図６（Ａ）に示すような、端子３１の内層（表層よりも下層）に元素層４０が設けられた電子部品３０を用いる。内層に元素層４０を含む端子３１は、例えば、めっき法を用い、端子３１の材料、元素層４０の材料、端子３１の材料を順に堆積することで形成することができる。端子３１とその内層に設けられた元素層４０が、電子部品３０の外部接続端子３１Ａとなる。   In the method for manufacturing an electronic device according to the second embodiment, an electronic component 30 in which an element layer 40 is provided in the inner layer (lower layer than the surface layer) of the terminal 31 as shown in FIG. The terminal 31 including the element layer 40 in the inner layer can be formed by, for example, using a plating method and sequentially depositing the material of the terminal 31, the material of the element layer 40, and the material of the terminal 31. The terminal 31 and the element layer 40 provided in the inner layer serve as the external connection terminal 31 </ b> A of the electronic component 30.

このような電子部品３０の端子３１と、電子部品２０の端子２１とを対向させ、位置合わせを行う。そして、半田５０が溶融する温度での熱処理、並びに、電子部品２０及び電子部品３０の押圧を行い、冷却して半田５０を固化する。これにより、図６（Ｂ）に示すように、端子２１と端子３１を、半田５０を介して接合する（接合部５１）。   The terminal 31 of the electronic component 30 and the terminal 21 of the electronic component 20 are opposed to each other to perform alignment. Then, heat treatment at a temperature at which the solder 50 is melted and pressing of the electronic component 20 and the electronic component 30 are performed, and the solder 50 is solidified by cooling. Thereby, as shown in FIG. 6B, the terminal 21 and the terminal 31 are joined via the solder 50 (joining portion 51).

このように電子部品２０と電子部品３０を、半田５０を用いて接合した後、図６（Ｃ）に示すように、電源７０を用いて互いの端子２１と端子３１の間に通電する。その際は、電子部品２０の端子２１側をアノードとし、電子部品３０の端子３１側をカソードとして、端子２１と端子３１の間に通電する。通電時には、所定温度で熱処理を行ってもよい。通電時の電子（電流）の流れにより、元素層４０に含まれる元素４０ａを、半田５０内に移動させ、端子２１と端子３１を、元素４０ａを含む半田５０の接合部５１によって接合する。接合後には、所定温度で熱処理を行ってもよい。   Thus, after joining the electronic component 20 and the electronic component 30 using the solder 50, as shown in FIG.6 (C), it supplies with electricity between the mutual terminals 21 and 31 using the power supply 70. FIG. In that case, the terminal 21 side of the electronic component 20 is used as an anode, and the terminal 31 side of the electronic component 30 is used as a cathode, and electricity is supplied between the terminal 21 and the terminal 31. When energized, heat treatment may be performed at a predetermined temperature. The element 40a contained in the element layer 40 is moved into the solder 50 by the flow of electrons (current) during energization, and the terminal 21 and the terminal 31 are joined by the joint portion 51 of the solder 50 containing the element 40a. After joining, heat treatment may be performed at a predetermined temperature.

これにより、互いの端子２１と端子３１が電気的に接続された電子部品２０及び電子部品３０を備える電子装置を得る。
尚、端子２１と端子３１の間の接合部５１には、元素層４０に含まれる元素４０ａのほか、端子３１に含まれる元素（例えばＣｕ）がエレクトロマイグレーションにより移動して含まれてもよい。 As a result, an electronic device including the electronic component 20 and the electronic component 30 in which the terminals 21 and 31 are electrically connected to each other is obtained.
In addition to the element 40a included in the element layer 40, an element (for example, Cu) included in the terminal 31 may be included in the junction 51 between the terminal 21 and the terminal 31 by being moved by electromigration.

このように、元素層４０を端子３１の内層に設けた場合にも、半田５０を用いた接合後に端子２１と端子３１の間に通電して元素４０ａを移動させる方法を採用することが可能である。   As described above, even when the element layer 40 is provided in the inner layer of the terminal 31, it is possible to employ a method in which the element 40 a is moved by energization between the terminal 21 and the terminal 31 after joining using the solder 50. is there.

次に、第３の実施の形態について説明する。
図７は第３の実施の形態に係る電子装置の製造方法の一例を示す図である。図７（Ａ）〜図７（Ｃ）には、第３の実施の形態に係る電子装置の各製造工程の要部断面を模式的に図示している。 Next, a third embodiment will be described.
FIG. 7 is a diagram illustrating an example of a method of manufacturing an electronic device according to the third embodiment. FIG. 7A to FIG. 7C schematically show a cross section of the main part of each manufacturing process of the electronic device according to the third embodiment.

この第３の実施の形態に係る電子装置の製造方法では、図７（Ａ）に示すような、端子３１上に設けられた元素層４０の上に表面層４１が設けられた電子部品３０を用いる。表面層４１には、例えば、元素層４０よりも半田５０の濡れ性が高い材料を用いる。例えば、元素層４０にＮｉ、Ｃｏといった層を用いる場合、表面層４１として、少なくとも表面にＡｕ、Ａｇ、Ｃｕ、パラジウム（Ｐｄ）、白金（Ｐｔ）といった層を含むものを用いることができる。表面層４１は、例えば、めっき法を用いて元素層４０上に形成することができる。端子３１、元素層４０及び表面層４１が、電子部品３０の外部接続端子３１Ａとなる。   In the method for manufacturing an electronic device according to the third embodiment, an electronic component 30 having a surface layer 41 provided on an element layer 40 provided on a terminal 31 as shown in FIG. Use. For the surface layer 41, for example, a material having higher wettability of the solder 50 than the element layer 40 is used. For example, when a layer such as Ni or Co is used for the element layer 40, the surface layer 41 can be one that includes at least a layer such as Au, Ag, Cu, palladium (Pd), or platinum (Pt) on the surface. The surface layer 41 can be formed on the element layer 40 by using, for example, a plating method. The terminal 31, the element layer 40, and the surface layer 41 serve as the external connection terminal 31A of the electronic component 30.

このように元素層４０及び表面層４１を設けた電子部品３０の端子３１と、電子部品２０の端子２１とを対向させ、位置合わせを行う。そして、半田５０が溶融する温度での熱処理、並びに、電子部品２０及び電子部品３０の押圧を行い、冷却して半田５０を固化する。これにより、図７（Ｂ）に示すように、端子２１と端子３１を、半田５０を介して接合する（接合部５１）。端子３１の上方に表面層４１が設けられているため、溶融した半田５０が表面層４１上に濡れ易く、端子２１と端子３１を、未接合の発生を抑え、良好に接合することが可能になる。尚、図７（Ｂ）に示す接合時には、表面層４１に含まれる元素の一部又は全部が半田５０との反応に消費されてもよい。   Thus, the terminal 31 of the electronic component 30 provided with the element layer 40 and the surface layer 41 and the terminal 21 of the electronic component 20 are opposed to perform alignment. Then, heat treatment at a temperature at which the solder 50 is melted and pressing of the electronic component 20 and the electronic component 30 are performed, and the solder 50 is solidified by cooling. Thereby, as shown in FIG. 7B, the terminal 21 and the terminal 31 are joined via the solder 50 (joining portion 51). Since the surface layer 41 is provided above the terminal 31, the molten solder 50 is easily wetted on the surface layer 41, and it is possible to bond the terminal 21 and the terminal 31 satisfactorily while suppressing the occurrence of non-bonding. Become. 7B, part or all of the elements included in the surface layer 41 may be consumed for the reaction with the solder 50.

このように電子部品２０と電子部品３０を、半田５０を用いて接合した後、図７（Ｃ）に示すように、電源７０を用いて互いの端子２１と端子３１の間に通電する。その際は、電子部品２０の端子２１側をアノードとし、電子部品３０の端子３１側をカソードとして、端子２１と端子３１の間に通電する。通電時には、所定温度で熱処理を行ってもよい。通電時の電子（電流）の流れにより、元素層４０に含まれる元素４０ａを、半田５０内に移動させ、端子２１と端子３１を、元素４０ａを含む半田５０の接合部５１によって接合する。接合後には、所定温度で熱処理を行ってもよい。   Thus, after joining the electronic component 20 and the electronic component 30 using the solder 50, as shown in FIG.7 (C), it supplies with electricity between the mutual terminals 21 and 31 using the power supply 70. FIG. In that case, the terminal 21 side of the electronic component 20 is used as an anode, and the terminal 31 side of the electronic component 30 is used as a cathode, and electricity is supplied between the terminal 21 and the terminal 31. When energized, heat treatment may be performed at a predetermined temperature. The element 40a contained in the element layer 40 is moved into the solder 50 by the flow of electrons (current) during energization, and the terminal 21 and the terminal 31 are joined by the joint portion 51 of the solder 50 containing the element 40a. After joining, heat treatment may be performed at a predetermined temperature.

これにより、互いの端子２１と端子３１が電気的に接続された電子部品２０及び電子部品３０を備える電子装置を得る。
尚、端子２１と端子３１の間の接合部５１には、元素層４０に含まれる元素４０ａのほか、表面層４１に含まれる元素（例えばＡｕ）や、端子３１に含まれる元素（例えばＣｕ）が、エレクトロマイグレーションにより移動して含まれてもよい。 As a result, an electronic device including the electronic component 20 and the electronic component 30 in which the terminals 21 and 31 are electrically connected to each other is obtained.
In addition to the element 40a included in the element layer 40, the element (for example, Au) included in the surface layer 41 and the element (for example, Cu) included in the terminal 31 are included in the joint portion 51 between the terminal 21 and the terminal 31. However, it may be moved and included by electromigration.

このように、表面層４１の下層に元素層４０を設けた場合にも、半田５０を用いた接合後に端子２１と端子３１の間に通電して元素４０ａを移動させる方法を採用することが可能である。   Thus, even when the element layer 40 is provided below the surface layer 41, it is possible to adopt a method of moving the element 40a by energizing between the terminal 21 and the terminal 31 after joining using the solder 50. It is.

次に、第４の実施の形態について説明する。
図８は第４の実施の形態に係る電子装置の製造方法の一例を示す図である。図８（Ａ）〜図８（Ｃ）には、第４の実施の形態に係る電子装置の各製造工程の要部断面を模式的に図示している。 Next, a fourth embodiment will be described.
FIG. 8 is a diagram illustrating an example of a method of manufacturing an electronic device according to the fourth embodiment. FIGS. 8A to 8C schematically show a cross section of a main part of each manufacturing process of the electronic device according to the fourth embodiment.

上記のように、接合後の通電により移動させる元素４０ａを含む元素層４０は、電子部品２０側に設けることもできる。この場合は、電子部品２０の端子２１上に、所定の元素４０ａを含む元素層４０が設けられ、元素層４０上に、半田５０が設けられる。元素層４０は、例えば、めっき法を用いて端子２１上に形成することができる。半田５０は、例えば、元素層４０上に半田ボールを搭載し、リフローを行うことで、設けることができる。端子２１とその上に設けられた元素層４０が、電子部品２０の外部接続端子２１Ａとなり、端子３１が、電子部品３０の外部接続端子３１Ａとなる。   As described above, the element layer 40 including the element 40a to be moved by energization after bonding can be provided on the electronic component 20 side. In this case, the element layer 40 containing the predetermined element 40 a is provided on the terminal 21 of the electronic component 20, and the solder 50 is provided on the element layer 40. The element layer 40 can be formed on the terminal 21 using, for example, a plating method. The solder 50 can be provided, for example, by mounting solder balls on the element layer 40 and performing reflow. The terminal 21 and the element layer 40 provided thereon become the external connection terminal 21A of the electronic component 20, and the terminal 31 becomes the external connection terminal 31A of the electronic component 30.

このように元素層４０を設けた電子部品２０の端子２１と、電子部品３０の端子３１とを対向させ、位置合わせを行う。そして、半田５０が溶融する温度での熱処理、並びに、電子部品２０及び電子部品３０の押圧を行い、冷却して半田５０を固化する。これにより、図８（Ｂ）に示すように、端子２１と端子３１を、半田５０を介して接合する（接合部５１）。   Thus, the terminal 21 of the electronic component 20 provided with the element layer 40 and the terminal 31 of the electronic component 30 are opposed to perform alignment. Then, heat treatment at a temperature at which the solder 50 is melted and pressing of the electronic component 20 and the electronic component 30 are performed, and the solder 50 is solidified by cooling. As a result, as shown in FIG. 8B, the terminal 21 and the terminal 31 are joined via the solder 50 (joining portion 51).

このように電子部品２０と電子部品３０を、半田５０を用いて接合した後、図８（Ｃ）に示すように、電源７０を用いて互いの端子２１と端子３１の間に通電する。その際は、電子部品２０の端子２１側をカソードとし、電子部品３０の端子３１側をアノードとして、端子２１と端子３１の間に通電する。通電時には、所定温度で熱処理を行ってもよい。通電時の電子（電流）の流れにより、元素層４０に含まれる元素４０ａを、半田５０内に移動させ、端子２１と端子３１を、元素４０ａを含む半田５０の接合部５１によって接合する。接合後には、所定温度で熱処理を行ってもよい。   Thus, after joining the electronic component 20 and the electronic component 30 using the solder 50, as shown in FIG.8 (C), it supplies with electricity between the mutual terminals 21 and 31 using the power supply 70. FIG. At that time, the terminal 21 side of the electronic component 20 is used as a cathode and the terminal 31 side of the electronic component 30 is used as an anode, and electricity is supplied between the terminal 21 and the terminal 31. When energized, heat treatment may be performed at a predetermined temperature. The element 40a contained in the element layer 40 is moved into the solder 50 by the flow of electrons (current) during energization, and the terminal 21 and the terminal 31 are joined by the joint portion 51 of the solder 50 containing the element 40a. After joining, heat treatment may be performed at a predetermined temperature.

これにより、互いの端子２１と端子３１が電気的に接続された電子部品２０及び電子部品３０を備える電子装置を得る。
尚、端子２１と端子３１の間の接合部５１には、元素層４０に含まれる元素４０ａのほか、端子２１に含まれる元素（例えばＣｕ）がエレクトロマイグレーションにより移動して含まれてもよい。 As a result, an electronic device including the electronic component 20 and the electronic component 30 in which the terminals 21 and 31 are electrically connected to each other is obtained.
In addition to the element 40 a included in the element layer 40, the element (for example, Cu) included in the terminal 21 may be included in the junction 51 between the terminal 21 and the terminal 31 by being moved by electromigration.

このように、元素層４０を電子部品２０側に設けた場合にも、半田５０を用いた接合後に端子２１と端子３１の間に通電して元素４０ａを移動させる方法を採用することが可能である。   As described above, even when the element layer 40 is provided on the electronic component 20 side, it is possible to employ a method in which the element 40a is moved by energizing between the terminal 21 and the terminal 31 after joining using the solder 50. is there.

尚、第４の実施の形態において、通電により元素４０ａを移動させた後には、上記図２〜図４に例示したのと同様に、端子２１上から元素層４０が消失していても、端子２１上に元素層４０の一部が残存していてもよい。   In the fourth embodiment, after the element 40a is moved by energization, even if the element layer 40 disappears from the terminal 21 as in the case illustrated in FIGS. A part of the element layer 40 may remain on 21.

また、第４の実施の形態において、通電の前には、上記図５の例に従い、電子部品２０と電子部品３０の間に接着材６０が設けられてもよい。
また、第４の実施の形態において、元素層４０は、上記図６の例に従い、端子２１の内層に設けられてもよい。 In the fourth embodiment, an adhesive 60 may be provided between the electronic component 20 and the electronic component 30 according to the example of FIG.
In the fourth embodiment, the element layer 40 may be provided in the inner layer of the terminal 21 according to the example of FIG.

更にまた、第４の実施の形態において、端子２１上の元素層４０の上には、上記図７の例に従い、表面層４１が設けられてもよい。
次に、第５の実施の形態について説明する。 Furthermore, in the fourth embodiment, a surface layer 41 may be provided on the element layer 40 on the terminal 21 in accordance with the example of FIG.
Next, a fifth embodiment will be described.

図９は第５の実施の形態に係る電子装置の製造方法の一例を示す図である。図９（Ａ）〜図９（Ｃ）には、第５の実施の形態に係る電子装置の各製造工程の要部断面を模式的に図示している。   FIG. 9 is a diagram illustrating an example of an electronic device manufacturing method according to the fifth embodiment. 9A to 9C schematically show a cross-section of the main part of each manufacturing process of the electronic device according to the fifth embodiment.

上記のように、接合後の通電により移動させる元素４０ａを含む元素層４０を設ける端子の形態は、特に限定されるものではない。例えば、上記のような元素層４０を、ピラー電極上に設けることもできる。   As described above, the form of the terminal provided with the element layer 40 including the element 40a moved by energization after bonding is not particularly limited. For example, the element layer 40 as described above can be provided on the pillar electrode.

図９（Ａ）には、端子２１としてＣｕ等のピラー電極２１ａを設け、その上に半田５０を設けた電子部品２０と、端子３１としてＣｕ等のピラー電極３１ａを設け、その上に元素層４０を設けた電子部品３０とを、対向させ、位置合わせした状態を図示している。電子部品２０側のピラー電極２１ａ及び半田５０は、めっき法を用いて形成することができ、めっき後の半田をリフローすることで、図９（Ａ）のような丸みを帯びた形状の半田５０が形成される。電子部品３０側のピラー電極３１ａ及び元素層４０も同様に、めっき法を用いて形成することができる。ピラー電極２１ａが、電子部品２０の外部接続端子２１Ａとなり、ピラー電極３１ａ及び元素層４０が、電子部品３０の外部接続端子３１Ａとなる。   In FIG. 9A, a pillar electrode 21a made of Cu or the like is provided as a terminal 21, and an electronic component 20 provided with a solder 50 thereon, and a pillar electrode 31a made of Cu or the like is provided as a terminal 31, and an element layer is formed thereon. The state where the electronic component 30 provided with 40 is opposed to each other is illustrated. The pillar electrode 21a and the solder 50 on the electronic component 20 side can be formed by using a plating method. By reflowing the solder after plating, the solder 50 having a round shape as shown in FIG. Is formed. Similarly, the pillar electrode 31a and the element layer 40 on the electronic component 30 side can also be formed using a plating method. The pillar electrode 21 a becomes the external connection terminal 21 A of the electronic component 20, and the pillar electrode 31 a and the element layer 40 become the external connection terminal 31 A of the electronic component 30.

図９（Ａ）のような状態から、半田５０が溶融する温度での熱処理、並びに、電子部品２０及び電子部品３０の押圧を行い、冷却して半田５０を固化する。これにより、図９（Ｂ）に示すように、ピラー電極２１ａと、元素層４０を設けたピラー電極３１ａとを、半田５０を介して接合する（接合部５１）。   9A, heat treatment at a temperature at which the solder 50 melts and pressing of the electronic component 20 and the electronic component 30 are performed, and the solder 50 is solidified by cooling. Thus, as shown in FIG. 9B, the pillar electrode 21a and the pillar electrode 31a provided with the element layer 40 are joined via the solder 50 (joining portion 51).

このように電子部品２０と電子部品３０を、半田５０を用いて接合した後、図９（Ｃ）に示すように、電源７０を用いて互いのピラー電極２１ａとピラー電極３１ａの間に通電する。その際は、電子部品２０の端子２１側をアノードとし、電子部品３０の端子３１側をカソードとして、ピラー電極２１ａとピラー電極３１ａの間に通電する。通電時には、所定温度で熱処理を行ってもよい。通電時の電子（電流）の流れにより、元素層４０に含まれる元素４０ａを、半田５０内に移動させ、ピラー電極２１ａとピラー電極３１ａを、元素４０ａを含む半田５０の接合部５１によって接合する。接合後には、所定温度で熱処理を行ってもよい。   After the electronic component 20 and the electronic component 30 are joined using the solder 50 in this way, as shown in FIG. 9C, a current is applied between the pillar electrode 21a and the pillar electrode 31a using the power source 70. . In that case, the terminal 21 side of the electronic component 20 is used as an anode, and the terminal 31 side of the electronic component 30 is used as a cathode, and electricity is passed between the pillar electrode 21a and the pillar electrode 31a. When energized, heat treatment may be performed at a predetermined temperature. The element 40a contained in the element layer 40 is moved into the solder 50 by the flow of electrons (current) during energization, and the pillar electrode 21a and the pillar electrode 31a are joined by the joint portion 51 of the solder 50 containing the element 40a. . After joining, heat treatment may be performed at a predetermined temperature.

これにより、互いのピラー電極２１ａとピラー電極３１ａが電気的に接続された電子部品２０及び電子部品３０を備える電子装置を得る。
尚、ピラー電極２１ａとピラー電極３１ａの間の接合部５１には、元素層４０に含まれる元素４０ａのほか、ピラー電極３１ａに含まれる元素（例えばＣｕ）がエレクトロマイグレーションにより移動して含まれてもよい。 Thereby, an electronic device including the electronic component 20 and the electronic component 30 in which the pillar electrode 21a and the pillar electrode 31a are electrically connected to each other is obtained.
The junction 51 between the pillar electrode 21a and the pillar electrode 31a includes an element 40a included in the element layer 40 and an element (for example, Cu) included in the pillar electrode 31a that is moved by electromigration. Also good.

このように、ピラー電極２１ａ及びピラー電極３１ａをそれぞれ端子２１及び端子３１として設けた場合にも、半田５０を用いた接合後に端子２１と端子３１の間に通電して元素４０ａを移動させる方法を採用することが可能である。   Thus, even when the pillar electrode 21a and the pillar electrode 31a are provided as the terminal 21 and the terminal 31, respectively, a method of moving the element 40a by energizing between the terminal 21 and the terminal 31 after joining using the solder 50 is provided. It is possible to adopt.

尚、第５の実施の形態において、通電により元素４０ａを移動させた後には、上記図２〜図４に例示したのと同様に、ピラー電極３１ａ上から元素層４０が消失していても、ピラー電極３１ａ上に元素層４０の一部が残存していてもよい。   In the fifth embodiment, after the element 40a is moved by energization, even if the element layer 40 has disappeared from the pillar electrode 31a, as illustrated in FIGS. A part of the element layer 40 may remain on the pillar electrode 31a.

また、第５の実施の形態において、通電の前には、上記図５の例に従い、電子部品２０と電子部品３０の間に接着材６０が設けられてもよい。
また、第５の実施の形態において、元素層４０は、上記図６の例に従い、ピラー電極３１ａの内層に設けられてもよい。 In the fifth embodiment, an adhesive 60 may be provided between the electronic component 20 and the electronic component 30 according to the example of FIG.
In the fifth embodiment, the element layer 40 may be provided in the inner layer of the pillar electrode 31a according to the example of FIG.

また、第５の実施の形態において、ピラー電極３１ａ上の元素層４０の上には、上記図７の例に従い、表面層４１が設けられてもよい。
更にまた、第５の実施の形態において、元素層４０は、上記図８の例に従い、電子部品２０側のピラー電極２１ａ上に設けられてもよい。 In the fifth embodiment, the surface layer 41 may be provided on the element layer 40 on the pillar electrode 31a according to the example of FIG.
Furthermore, in the fifth embodiment, the element layer 40 may be provided on the pillar electrode 21a on the electronic component 20 side in accordance with the example of FIG.

次に、第６の実施の形態について説明する。
図１０は第６の実施の形態に係る電子装置の製造方法の一例を示す図である。図１０（Ａ）〜図１０（Ｃ）には、第６の実施の形態に係る電子装置の各製造工程の要部断面を模式的に図示している。 Next, a sixth embodiment will be described.
FIG. 10 is a diagram illustrating an example of a method of manufacturing an electronic device according to the sixth embodiment. FIGS. 10A to 10C schematically show a cross section of a main part of each manufacturing process of the electronic device according to the sixth embodiment.

図１０（Ａ）には、端子２１としてＣｕ等のピラー電極２１ａを設け、その上に半田５０を設けた電子部品２０と、端子３１上に元素層４０を設けた電子部品３０とを、対向させ、位置合わせした状態を図示している。このような状態から、半田５０が溶融する温度での熱処理を経て、図１０（Ｂ）に示すように、ピラー電極２１ａと、元素層４０を設けた端子３１とを、半田５０を介して接合する（接合部５１）。接合後、図１０（Ｃ）に示すように、電源７０を用いて互いのピラー電極２１ａと端子３１の間に通電する。その際は、電子部品２０のピラー電極２１ａ側をアノードとし、電子部品３０の端子３１側をカソードとして、ピラー電極２１ａと端子３１の間に通電する。この通電により、元素層４０に含まれる元素４０ａを、半田５０内に移動させ、ピラー電極２１ａと端子３１を接合し（接合部５１）、電子装置を得る。   In FIG. 10A, an electronic component 20 in which a pillar electrode 21a such as Cu is provided as a terminal 21 and a solder 50 is provided thereon, and an electronic component 30 in which an element layer 40 is provided on a terminal 31 are opposed to each other. And the aligned state is shown. From such a state, through a heat treatment at a temperature at which the solder 50 is melted, the pillar electrode 21a and the terminal 31 provided with the element layer 40 are joined via the solder 50 as shown in FIG. (Junction 51). After joining, as shown in FIG. 10C, electricity is applied between the pillar electrodes 21 a and the terminals 31 using the power source 70. In that case, electricity is passed between the pillar electrode 21a and the terminal 31 with the pillar electrode 21a side of the electronic component 20 as an anode and the terminal 31 side of the electronic component 30 as a cathode. By this energization, the element 40a contained in the element layer 40 is moved into the solder 50, and the pillar electrode 21a and the terminal 31 are joined (joined part 51), and an electronic device is obtained.

このように、ピラー電極２１ａの端子２１と、元素層４０を設けた端子３１との組み合わせであっても、半田５０を用いた接合後に端子２１と端子３１の間に通電して元素４０ａを移動させる方法を採用することが可能である。   In this way, even in the combination of the terminal 21 of the pillar electrode 21a and the terminal 31 provided with the element layer 40, the element 40a is moved by energization between the terminal 21 and the terminal 31 after joining using the solder 50. Can be adopted.

尚、第６の実施の形態において、通電により元素４０ａを移動させた後には、上記図２〜図４に例示したのと同様に、端子３１上から元素層４０が消失していても、端子３１上に元素層４０の一部が残存していてもよい。   In the sixth embodiment, after the element 40a is moved by energization, even if the element layer 40 disappears from the terminal 31 as in the case illustrated in FIGS. A part of the element layer 40 may remain on 31.

また、第６の実施の形態において、通電の前には、上記図５の例に従い、電子部品２０と電子部品３０の間に接着材６０が設けられてもよい。
また、第６の実施の形態において、元素層４０は、上記図６の例に従い、端子３１の内層に設けられてもよい。 In the sixth embodiment, before energization, an adhesive 60 may be provided between the electronic component 20 and the electronic component 30 according to the example of FIG.
In the sixth embodiment, the element layer 40 may be provided in the inner layer of the terminal 31 according to the example of FIG.

また、第６の実施の形態において、端子３１上の元素層４０の上には、上記図７の例に従い、表面層４１が設けられてもよい。
更にまた、第６の実施の形態において、元素層４０は、上記図８の例に従い、電子部品２０側のピラー電極２１ａ上に設けられてもよい。 In the sixth embodiment, the surface layer 41 may be provided on the element layer 40 on the terminal 31 according to the example of FIG.
Furthermore, in the sixth embodiment, the element layer 40 may be provided on the pillar electrode 21a on the electronic component 20 side in accordance with the example of FIG.

以上、第１〜第６の実施の形態について説明した。
尚、以上説明した元素層４０には、２種以上の元素が含まれていてもよい。この場合、半田５０を用いた端子２１と端子３１の接合後に行われる通電時には、半田５０内に、元素層４０から複数種の元素が移動し得る。このように半田５０内に元素層４０から複数種の元素を移動させることで、端子２１と端子３１の間に、所望の成分、組成を有する接合部を形成することが可能である。 The first to sixth embodiments have been described above.
The element layer 40 described above may contain two or more elements. In this case, when energization is performed after joining the terminal 21 and the terminal 31 using the solder 50, a plurality of types of elements can move from the element layer 40 into the solder 50. Thus, by moving a plurality of types of elements from the element layer 40 into the solder 50, it is possible to form a junction having a desired component and composition between the terminal 21 and the terminal 31.

また、以上の説明では、端子２１や端子３１の表層又は内層に、所定の元素４０ａを含む元素層４０を設けるようにしたが、元素４０ａは、必ずしも層状に設けられていることを要しない。元素４０ａは、端子２１や端子３１の構造内に含まれていれば、上記のような半田５０を用いた端子２１と端子３１の接合後に行われる通電によって、半田５０内に移動させることが可能である。   In the above description, the element layer 40 including the predetermined element 40a is provided on the surface layer or the inner layer of the terminal 21 or the terminal 31, but the element 40a is not necessarily provided in a layered manner. If the element 40a is included in the structure of the terminal 21 or the terminal 31, it can be moved into the solder 50 by energization performed after the terminal 21 and the terminal 31 are joined using the solder 50 as described above. It is.

また、以上の説明では、端子２１と端子３１を接合する接合材として、Ｓｎを含む半田を例示したが、接合材には、様々な種類の半田を用いることが可能である。また、接合材には、端子２１と端子３１を接合することができ、所定の元素４０ａがエレクトロマイグレーションにより移動して含まれることで所望の特性を発現することができるものであれば、半田以外の材料を用いることも可能である。   In the above description, the solder containing Sn is exemplified as the bonding material for bonding the terminal 21 and the terminal 31, but various types of solder can be used as the bonding material. In addition, the bonding material can be bonded to the terminal 21 and the terminal 31, and can include the predetermined element 40a by being moved by electromigration so that desired characteristics can be expressed. It is also possible to use these materials.

以下に実施例を示す。
［実施例１］
Ｃｕ電極を設けた半導体素子、及び半導体素子のＣｕ電極に対応する位置にＣｕ電極を設けた回路基板を準備する。半導体素子のＣｕ電極上には、ボール径５０μｍ〜１５０μｍのＳｎ半田を搭載する。回路基板のＣｕ電極上には、膜厚２μｍ〜７μｍのＮｉ層を電解めっきにより形成する。 Examples are shown below.
[Example 1]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn solder having a ball diameter of 50 μm to 150 μm is mounted. An Ni layer having a thickness of 2 μm to 7 μm is formed on the Cu electrode of the circuit board by electrolytic plating.

次いで、Ｃｕ電極上にＳｎ半田を搭載した半導体素子と、Ｃｕ電極上にＮｉ層を形成した回路基板とを対向させて位置合わせする。そして、窒素（Ｎ2）雰囲気中、Ｓｎ半田が溶融する温度で熱処理を行い、半導体素子のＣｕ電極と、Ｎｉ層を設けた回路基板のＣｕ電極とを、Ｓｎ半田を用いて接合する。 Next, the semiconductor element in which the Sn solder is mounted on the Cu electrode and the circuit board in which the Ni layer is formed on the Cu electrode are opposed to each other and aligned. Then, heat treatment is performed at a temperature at which Sn solder melts in a nitrogen (N 2 ) atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the Ni layer are joined using Sn solder.

次いで、半導体素子のＣｕ電極側をアノードとし、回路基板のＣｕ電極側をカソードとして、電流密度１．０×１０8Ａ／ｍ2〜２．０×１０8Ａ／ｍ2の範囲で、５時間程度、Ｃｕ電極間に電流を流し、半導体装置（電子装置）を形成する。 Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, a current density in the range of 1.0 × 10 8 A / m 2 to 2.0 × 10 8 A / m 2 is 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

［実施例２］
Ｃｕ電極を設けた半導体素子、及び半導体素子のＣｕ電極に対応する位置にＣｕ電極を設けた回路基板を準備する。半導体素子のＣｕ電極上には、ボール径５０μｍ〜１５０μｍのＳｎ半田を搭載する。回路基板のＣｕ電極上には、膜厚２μｍ〜７μｍのＣｏ層を電解めっきにより形成する。 [Example 2]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn solder having a ball diameter of 50 μm to 150 μm is mounted. On the Cu electrode of the circuit board, a Co layer having a thickness of 2 μm to 7 μm is formed by electrolytic plating.

次いで、Ｃｕ電極上にＳｎ半田を搭載した半導体素子と、Ｃｕ電極上にＣｏ層を形成した回路基板とを対向させて位置合わせする。そして、Ｎ2雰囲気中、Ｓｎ半田が溶融する温度で熱処理を行い、半導体素子のＣｕ電極と、Ｃｏ層を設けた回路基板のＣｕ電極とを、Ｓｎ半田を用いて接合する。 Next, the semiconductor element in which the Sn solder is mounted on the Cu electrode and the circuit board in which the Co layer is formed on the Cu electrode are faced and aligned. Then, heat treatment is performed at a temperature at which Sn solder melts in an N 2 atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the Co layer are joined using Sn solder.

次いで、半導体素子のＣｕ電極側をアノードとし、回路基板のＣｕ電極側をカソードとして、電流密度１．０×１０8Ａ／ｍ2〜２．０×１０8Ａ／ｍ2の範囲で、５時間程度、Ｃｕ電極間に電流を流し、半導体装置（電子装置）を形成する。 Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, a current density in the range of 1.0 × 10 8 A / m 2 to 2.0 × 10 8 A / m 2 is 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

［実施例３］
Ｃｕ電極を設けた半導体素子、及び半導体素子のＣｕ電極に対応する位置にＣｕ電極を設けた回路基板を準備する。半導体素子のＣｕ電極上には、ボール径５０μｍ〜１５０μｍのＳｎ半田を搭載する。回路基板のＣｕ電極上には、膜厚１μｍ〜２μｍのＷ層を電解めっきにより形成する。 [Example 3]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn solder having a ball diameter of 50 μm to 150 μm is mounted. A W layer having a thickness of 1 μm to 2 μm is formed on the Cu electrode of the circuit board by electrolytic plating.

次いで、Ｃｕ電極上にＳｎ半田を搭載した半導体素子と、Ｃｕ電極上にＷ層を形成した回路基板とを対向させて位置合わせする。そして、Ｎ2雰囲気中、Ｓｎ半田が溶融する温度で熱処理を行い、半導体素子のＣｕ電極と、Ｗ層を設けた回路基板のＣｕ電極とを、Ｓｎ半田を用いて接合する。 Next, the semiconductor element in which the Sn solder is mounted on the Cu electrode and the circuit board in which the W layer is formed on the Cu electrode are opposed to each other and aligned. Then, heat treatment is performed at a temperature at which Sn solder melts in an N 2 atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the W layer are joined using Sn solder.

次いで、半導体素子のＣｕ電極側をアノードとし、回路基板のＣｕ電極側をカソードとして、電流密度１．０×１０8Ａ／ｍ2〜５．０×１０8Ａ／ｍ2の範囲で、５時間程度、Ｃｕ電極間に電流を流し、半導体装置（電子装置）を形成する。 Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, the current density ranges from 1.0 × 10 8 A / m 2 to 5.0 × 10 8 A / m 2 and 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

［実施例４］
Ｃｕ電極を設けた半導体素子、及び半導体素子のＣｕ電極に対応する位置にＣｕ電極を設けた回路基板を準備する。半導体素子のＣｕ電極上には、ボール径５０μｍ〜１５０μｍのＳｎ−Ａｇ半田（Ａｇ：３．０％）を搭載する。回路基板のＣｕ電極上には、膜厚２μｍ〜７μｍのＮｉ層を電解めっきにより形成する。 [Example 4]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn—Ag solder (Ag: 3.0%) having a ball diameter of 50 μm to 150 μm is mounted. An Ni layer having a thickness of 2 μm to 7 μm is formed on the Cu electrode of the circuit board by electrolytic plating.

次いで、Ｃｕ電極上にＳｎ−Ａｇ半田を搭載した半導体素子と、Ｃｕ電極上にＮｉ層を形成した回路基板とを対向させて位置合わせする。そして、Ｎ2雰囲気中、Ｓｎ−Ａｇ半田が溶融する温度で熱処理を行い、半導体素子のＣｕ電極と、Ｎｉ層を設けた回路基板のＣｕ電極とを、Ｓｎ−Ａｇ半田を用いて接合する。 Next, the semiconductor element in which Sn—Ag solder is mounted on the Cu electrode and the circuit board on which the Ni layer is formed on the Cu electrode are opposed to each other and aligned. Then, heat treatment is performed at a temperature at which the Sn—Ag solder melts in an N 2 atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the Ni layer are joined using Sn—Ag solder.

次いで、半導体素子のＣｕ電極側をアノードとし、回路基板のＣｕ電極側をカソードとして、電流密度１．０×１０8Ａ／ｍ2〜２．０×１０8Ａ／ｍ2の範囲で、５時間程度、Ｃｕ電極間に電流を流し、半導体装置（電子装置）を形成する。 Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, a current density in the range of 1.0 × 10 8 A / m 2 to 2.0 × 10 8 A / m 2 is 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

［実施例５］
Ｃｕ電極を設けた半導体素子、及び半導体素子のＣｕ電極に対応する位置にＣｕ電極を設けた回路基板を準備する。半導体素子のＣｕ電極上には、ボール径５０μｍ〜１５０μｍのＳｎ−Ａｇ半田（Ａｇ：３．０％）を搭載する。回路基板のＣｕ電極上には、膜厚２μｍ〜７μｍのＣｏ層を電解めっきにより形成する。 [Example 5]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn—Ag solder (Ag: 3.0%) having a ball diameter of 50 μm to 150 μm is mounted. On the Cu electrode of the circuit board, a Co layer having a thickness of 2 μm to 7 μm is formed by electrolytic plating.

次いで、Ｃｕ電極上にＳｎ−Ａｇ半田を搭載した半導体素子と、Ｃｕ電極上にＣｏ層を形成した回路基板とを対向させて位置合わせする。そして、Ｎ2雰囲気中、Ｓｎ−Ａｇ半田が溶融する温度で熱処理を行い、半導体素子のＣｕ電極と、Ｃｏ層を設けた回路基板のＣｕ電極とを、Ｓｎ−Ａｇ半田を用いて接合する。 Next, the semiconductor element in which the Sn—Ag solder is mounted on the Cu electrode and the circuit board in which the Co layer is formed on the Cu electrode are opposed to each other and aligned. Then, heat treatment is performed at a temperature at which the Sn—Ag solder melts in an N 2 atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the Co layer are joined using Sn—Ag solder.

次いで、半導体素子のＣｕ電極側をアノードとし、回路基板のＣｕ電極側をカソードとして、電流密度１．０×１０8Ａ／ｍ2〜２．０×１０8Ａ／ｍ2の範囲で、５時間程度、Ｃｕ電極間に電流を流し、半導体装置（電子装置）を形成する。 Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, a current density in the range of 1.0 × 10 8 A / m 2 to 2.0 × 10 8 A / m 2 is 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

［実施例６］
Ｃｕ電極を設けた半導体素子、及び半導体素子のＣｕ電極に対応する位置にＣｕ電極を設けた回路基板を準備する。半導体素子のＣｕ電極上には、ボール径５０μｍ〜１５０μｍのＳｎ−Ａｇ半田（Ａｇ：３．０％）を搭載する。回路基板のＣｕ電極上には、膜厚１μｍ〜２μｍのＷ層を電解めっきにより形成する。 [Example 6]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn—Ag solder (Ag: 3.0%) having a ball diameter of 50 μm to 150 μm is mounted. A W layer having a thickness of 1 μm to 2 μm is formed on the Cu electrode of the circuit board by electrolytic plating.

次いで、Ｃｕ電極上にＳｎ−Ａｇ半田を搭載した半導体素子と、Ｃｕ電極上にＷ層を形成した回路基板とを対向させて位置合わせする。そして、Ｎ2雰囲気中、Ｓｎ−Ａｇ半田が溶融する温度で熱処理を行い、半導体素子のＣｕ電極と、Ｗ層を設けた回路基板のＣｕ電極とを、Ｓｎ−Ａｇ半田を用いて接合する。 Next, the semiconductor element in which Sn—Ag solder is mounted on the Cu electrode and the circuit board in which the W layer is formed on the Cu electrode are opposed to each other and aligned. Then, heat treatment is performed at a temperature at which the Sn—Ag solder melts in an N 2 atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the W layer are joined using Sn—Ag solder.

次いで、半導体素子のＣｕ電極側をアノードとし、回路基板のＣｕ電極側をカソードとして、電流密度１．０×１０8Ａ／ｍ2〜２．０×１０8Ａ／ｍ2の範囲で、５時間程度、Ｃｕ電極間に電流を流し、半導体装置（電子装置）を形成する。 Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, a current density in the range of 1.0 × 10 8 A / m 2 to 2.0 × 10 8 A / m 2 is 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

［実施例７］
Ｃｕ電極を設けた半導体素子、及び半導体素子のＣｕ電極に対応する位置にＣｕ電極を設けた回路基板を準備する。半導体素子のＣｕ電極上には、ボール径５０μｍ〜１５０μｍのＳｎ−Ａｇ−Ｃｕ半田（Ａｇ：３．０％，Ｃｕ：０．５％）を搭載する。回路基板のＣｕ電極上には、膜厚２μｍ〜７μｍのＮｉ層を電解めっきにより形成する。 [Example 7]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn—Ag—Cu solder (Ag: 3.0%, Cu: 0.5%) having a ball diameter of 50 μm to 150 μm is mounted. An Ni layer having a thickness of 2 μm to 7 μm is formed on the Cu electrode of the circuit board by electrolytic plating.

次いで、Ｃｕ電極上にＳｎ−Ａｇ−Ｃｕ半田を搭載した半導体素子と、Ｃｕ電極上にＮｉ層を形成した回路基板とを対向させて位置合わせする。そして、Ｎ2雰囲気中、Ｓｎ−Ａｇ−Ｃｕ半田が溶融する温度で熱処理を行い、半導体素子のＣｕ電極と、Ｎｉ層を設けた回路基板のＣｕ電極とを、Ｓｎ−Ａｇ−Ｃｕ半田を用いて接合する。 Next, the semiconductor element in which the Sn—Ag—Cu solder is mounted on the Cu electrode and the circuit board in which the Ni layer is formed on the Cu electrode are faced and aligned. Then, heat treatment is performed at a temperature at which the Sn—Ag—Cu solder melts in an N 2 atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the Ni layer are made of Sn—Ag—Cu solder. And join.

次いで、半導体素子のＣｕ電極側をアノードとし、回路基板のＣｕ電極側をカソードとして、電流密度１．０×１０8Ａ／ｍ2〜２．０×１０8Ａ／ｍ2の範囲で、５時間程度、Ｃｕ電極間に電流を流し、半導体装置（電子装置）を形成する。 Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, a current density in the range of 1.0 × 10 8 A / m 2 to 2.0 × 10 8 A / m 2 is 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

［実施例８］
Ｃｕ電極を設けた半導体素子、及び半導体素子のＣｕ電極に対応する位置にＣｕ電極を設けた回路基板を準備する。半導体素子のＣｕ電極上には、ボール径５０μｍ〜１５０μｍのＳｎ−Ａｇ−Ｃｕ半田（Ａｇ：３．０％，Ｃｕ：０．５％）を搭載する。回路基板のＣｕ電極上には、膜厚２μｍ〜７μｍのＣｏ層を電解めっきにより形成する。 [Example 8]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn—Ag—Cu solder (Ag: 3.0%, Cu: 0.5%) having a ball diameter of 50 μm to 150 μm is mounted. On the Cu electrode of the circuit board, a Co layer having a thickness of 2 μm to 7 μm is formed by electrolytic plating.

次いで、Ｃｕ電極上にＳｎ−Ａｇ−Ｃｕ半田を搭載した半導体素子と、Ｃｕ電極上にＣｏ層を形成した回路基板とを対向させて位置合わせする。そして、Ｎ2雰囲気中、Ｓｎ−Ａｇ−Ｃｕ半田が溶融する温度で熱処理を行い、半導体素子のＣｕ電極と、Ｃｏ層を設けた回路基板のＣｕ電極とを、Ｓｎ−Ａｇ−Ｃｕ半田を用いて接合する。 Next, the semiconductor element in which the Sn—Ag—Cu solder is mounted on the Cu electrode and the circuit board in which the Co layer is formed on the Cu electrode are opposed to each other and aligned. Then, heat treatment is performed at a temperature at which the Sn—Ag—Cu solder melts in an N 2 atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the Co layer are used with Sn—Ag—Cu solder. And join.

次いで、半導体素子のＣｕ電極側をアノードとし、回路基板のＣｕ電極側をカソードとして、電流密度１．０×１０8Ａ／ｍ2〜２．０×１０8Ａ／ｍ2の範囲で、５時間程度、Ｃｕ電極間に電流を流し、半導体装置（電子装置）を形成する。 Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, a current density in the range of 1.0 × 10 8 A / m 2 to 2.0 × 10 8 A / m 2 is 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

［実施例９］
Ｃｕ電極を設けた半導体素子、及び半導体素子のＣｕ電極に対応する位置にＣｕ電極を設けた回路基板を準備する。半導体素子のＣｕ電極上には、ボール径５０μｍ〜１５０μｍのＳｎ−Ａｇ−Ｃｕ半田（Ａｇ：３．０％，Ｃｕ：０．５％）を搭載する。回路基板のＣｕ電極上には、膜厚１μｍ〜２μｍのＷ層を電解めっきにより形成する。 [Example 9]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn—Ag—Cu solder (Ag: 3.0%, Cu: 0.5%) having a ball diameter of 50 μm to 150 μm is mounted. A W layer having a thickness of 1 μm to 2 μm is formed on the Cu electrode of the circuit board by electrolytic plating.

次いで、Ｃｕ電極上にＳｎ−Ａｇ−Ｃｕ半田を搭載した半導体素子と、Ｃｕ電極上にＷ層を形成した回路基板とを対向させて位置合わせする。そして、Ｎ2雰囲気中、Ｓｎ−Ａｇ−Ｃｕ半田が溶融する温度で熱処理を行い、半導体素子のＣｕ電極と、Ｗ層を設けた回路基板のＣｕ電極とを、Ｓｎ−Ａｇ−Ｃｕ半田を用いて接合する。 Next, the semiconductor element in which the Sn—Ag—Cu solder is mounted on the Cu electrode and the circuit board in which the W layer is formed on the Cu electrode are faced and aligned. Then, heat treatment is performed at a temperature at which Sn—Ag—Cu solder melts in an N 2 atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the W layer are made of Sn—Ag—Cu solder. And join.

次いで、半導体素子のＣｕ電極側をアノードとし、回路基板のＣｕ電極側をカソードとして、電流密度１．０×１０8Ａ／ｍ2〜５．０×１０8Ａ／ｍ2の範囲で、５時間程度、Ｃｕ電極間に電流を流し、半導体装置（電子装置）を形成する。 Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, the current density ranges from 1.0 × 10 8 A / m 2 to 5.0 × 10 8 A / m 2 and 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

［実施例１０］
実施例１〜９の半導体装置について、電気的な不具合がないことを確認したうえで、−２５℃〜１２５℃の繰り返し温度サイクル試験を５００サイクル行った。実施例１〜９のいずれの半導体装置も、サイクル試験後の抵抗上昇は１０％以下と良好な値を示した。 [Example 10]
About the semiconductor device of Examples 1-9, after confirming that there was no electrical malfunction, the repeated temperature cycle test of -25 degreeC-125 degreeC was done 500 cycles. In any of the semiconductor devices of Examples 1 to 9, the resistance increase after the cycle test showed a good value of 10% or less.

また、実施例１〜９の半導体装置について、電気的な不具合がないことを確認したうえで、１２１℃で湿度８５％の環境下に１０００時間放置し、その後、抵抗上昇を評価した。放置後の実施例１〜９のいずれの半導体装置も、サイクル試験後同様、抵抗上昇は１０％以下と良好な値を示した。   In addition, after confirming that the semiconductor devices of Examples 1 to 9 had no electrical problems, they were left in an environment of 85% humidity at 121 ° C. for 1000 hours, and then the increase in resistance was evaluated. In any of the semiconductor devices of Examples 1 to 9 after being left, as in the case after the cycle test, the resistance increase showed a good value of 10% or less.

以上説明した実施の形態に関し、更に以下の付記を開示する。
（付記１） 第１元素を含む第１端子を備える第１電子部品を準備する工程と、
第２端子を備える第２電子部品を準備する工程と、
前記第１端子と前記第２端子とを接合材を用いて接合する工程と、
接合された前記第１端子と前記第２端子との間に通電して前記第１元素を前記接合材に移動させる工程と
を含むことを特徴とする電子装置の製造方法。 Regarding the embodiment described above, the following additional notes are further disclosed.
(Additional remark 1) The process of preparing a 1st electronic component provided with the 1st terminal containing a 1st element,
Preparing a second electronic component comprising a second terminal;
Bonding the first terminal and the second terminal using a bonding material;
And a step of moving the first element to the bonding material by energizing between the bonded first terminal and the second terminal.

（付記２） 前記第１端子をカソードとし、前記第２端子をアノードとして、接合された前記第１端子と前記第２端子との間に通電することを特徴とする付記１に記載の電子装置の製造方法。   (Supplementary note 2) The electronic device according to Supplementary note 1, wherein the first terminal is used as a cathode and the second terminal is used as an anode, and electricity is applied between the joined first terminal and the second terminal. Manufacturing method.

（付記３） 準備される前記第１電子部品の前記第１端子は、前記第１元素を含む第１元素層を有することを特徴とする付記１又は２に記載の電子装置の製造方法。
（付記４） 前記第１元素層は、前記第１端子の表層に設けられることを特徴とする付記３に記載の電子装置の製造方法。 (Additional remark 3) The said 1st terminal of the said 1st electronic component prepared has a 1st element layer containing the said 1st element, The manufacturing method of the electronic device of Additional remark 1 or 2 characterized by the above-mentioned.
(Additional remark 4) The said 1st element layer is provided in the surface layer of the said 1st terminal, The manufacturing method of the electronic device of Additional remark 3 characterized by the above-mentioned.

（付記５） 前記第１元素層は、前記第１端子の内層に設けられることを特徴とする付記３に記載の電子装置の製造方法。
（付記６） 前記第１端子は、前記第１元素層上に設けられ、前記第１端子と前記第２端子とを接合する際の前記接合材の濡れ性が前記第１元素層よりも高い表面層を更に有することを特徴とする付記３に記載の電子装置の製造方法。 (Additional remark 5) The said 1st element layer is provided in the inner layer of the said 1st terminal, The manufacturing method of the electronic device of Additional remark 3 characterized by the above-mentioned.
(Appendix 6) The first terminal is provided on the first element layer, and the wettability of the bonding material when the first terminal and the second terminal are bonded is higher than that of the first element layer. The method for manufacturing an electronic device according to appendix 3, further comprising a surface layer.

（付記７） 前記第１元素を前記接合材に移動させる工程は、前記第１元素を移動させて前記接合材の組織を変化させる工程を含むことを特徴とする付記１乃至６のいずれかに記載の電子装置の製造方法。   (Supplementary note 7) The method according to any one of supplementary notes 1 to 6, wherein the step of moving the first element to the bonding material includes a step of moving the first element to change a structure of the bonding material. The manufacturing method of the electronic device of description.

（付記８） 前記第１元素を前記接合材に移動させる工程は、移動させた前記第１元素と前記接合材との反応により金属間化合物を形成する工程を含むことを特徴とする付記１乃至６のいずれかに記載の電子装置の製造方法。   (Appendix 8) The step of moving the first element to the bonding material includes the step of forming an intermetallic compound by a reaction between the moved first element and the bonding material. 7. A method for manufacturing an electronic device according to claim 6.

（付記９） 前記第１端子は、第２元素を含み、
前記第１元素を前記接合材に移動させる工程は、前記第２元素を前記接合材に移動させる工程を含むことを特徴とする付記１乃至８のいずれかに記載の電子装置の製造方法。 (Supplementary Note 9) The first terminal includes a second element,
The method of manufacturing an electronic device according to any one of appendices 1 to 8, wherein the step of moving the first element to the bonding material includes a step of moving the second element to the bonding material.

（付記１０） 前記第１元素を前記接合材に移動させる工程は、前記接合材の融点未満の温度で熱処理を行う工程を含むことを特徴とする付記１乃至９のいずれかに記載の電子装置の製造方法。   (Supplementary note 10) The electronic device according to any one of supplementary notes 1 to 9, wherein the step of moving the first element to the bonding material includes a step of performing a heat treatment at a temperature lower than a melting point of the bonding material. Manufacturing method.

（付記１１） 前記第１元素を前記接合材に移動させる工程の後に、前記接合材の融点未満の温度で熱処理を行う工程を含むことを特徴とする付記１乃至１０のいずれかに記載の電子装置の製造方法。   (Supplementary note 11) The electron according to any one of supplementary notes 1 to 10, further comprising a step of performing a heat treatment at a temperature lower than a melting point of the bonding material after the step of moving the first element to the bonding material. Device manufacturing method.

（付記１２） 前記第１元素を前記接合材に移動させる工程の後に、前記接合材の融点以上の温度で熱処理を行う工程を含むことを特徴とする付記１乃至１０のいずれかに記載の電子装置の製造方法。   (Supplementary note 12) The electron according to any one of supplementary notes 1 to 10, further comprising a step of performing a heat treatment at a temperature equal to or higher than a melting point of the bonding material after the step of moving the first element to the bonding material. Device manufacturing method.

（付記１３） 前記第１端子と前記第２端子とを前記接合材を用いて接合する工程の後で、前記第１元素を前記接合材に移動させる工程の前に、前記第１電子部品と前記第２電子部品の間に接着材を設ける工程を含むことを特徴とする付記１乃至１２のいずれかに記載の電子装置の製造方法。   (Supplementary Note 13) After the step of bonding the first terminal and the second terminal using the bonding material, before the step of moving the first element to the bonding material, the first electronic component and The method for manufacturing an electronic device according to any one of appendices 1 to 12, further comprising a step of providing an adhesive between the second electronic components.

１０ 電子装置
２０，３０ 電子部品
２１，３１ 端子
２１ａ，３１ａ ピラー電極
２１Ａ，３１Ａ 外部接続端子
４０ 元素層
４０ａ 元素
４１ 表面層
５０ 半田
５１，５１ａ，５１ｂ 接合部
６０ 接着材
７０ 電源 DESCRIPTION OF SYMBOLS 10 Electronic device 20, 30 Electronic component 21, 31 Terminal 21a, 31a Pillar electrode 21A, 31A External connection terminal 40 Element layer 40a Element 41 Surface layer 50 Solder 51, 51a, 51b Joint 60 Adhesive 70 Power supply

Claims (5)

第１端子を備える第１電子部品と、第２端子を備える第２電子部品の、前記第１端子と前記第２端子のうちいずれか一方に第１元素を含む第１元素層が内層に設けられた前記第１端子と前記第２端子とを接合材を用いて接合する工程と、
接合された前記第１端子と前記第２端子との間に通電して前記第１元素を前記接合材に移動させる工程と
を含むことを特徴とする電子装置の製造方法。 The first electronic component including the first terminal and the second electronic component including the second terminal include a first element layer containing the first element in one of the first terminal and the second terminal. a step of bonding the first terminal which is the second terminal using a bonding material,
And a step of moving the first element to the bonding material by energizing between the bonded first terminal and the second terminal. 前記第１端子と前記第２端子のうち前記第１元素層が設けられた一方をカソードとし、他方をアノードとして、接合された前記第１端子と前記第２端子との間に通電することを特徴とする請求項１に記載の電子装置の製造方法。 One of the first terminal and the second terminal provided with the first element layer is a cathode and the other is an anode, and energization is performed between the joined first terminal and the second terminal. The method for manufacturing an electronic device according to claim 1, wherein: 前記第１元素層上に、前記第１端子と前記第２端子とを接合する際の前記接合材の濡れ性が前記第１元素層よりも高い表面層が設けられることを特徴とする請求項１又は２に記載の電子装置の製造方法。 The surface layer in which the wettability of the bonding material when bonding the first terminal and the second terminal is higher than that of the first element layer is provided on the first element layer. A method for manufacturing the electronic device according to 1 or 2 . 前記第１元素を前記接合材に移動させる工程は、前記接合材の融点未満の温度で熱処理を行う工程を含むことを特徴とする請求項１乃至３のいずれかに記載の電子装置の製造方法。 Wherein the step of moving the first element to the bonding material, manufacturing method of an electronic device according to any one of claims 1 to 3, characterized in that it comprises a step of performing heat treatment at a temperature lower than the melting point of the bonding material . 前記第１元素を前記接合材に移動させる工程の後に、前記接合材の融点以上の温度で熱処理を行う工程を含むことを特徴とする請求項１乃至４のいずれかに記載の電子装置の製造方法。
After the step of moving the first element to the bonding material, the manufacture of electronic apparatus according to any one of claims 1 to 4, characterized in that it comprises a step of performing heat treatment at a temperature above the melting point of the bonding material Method.
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