JP6189771B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6189771B2 JP6189771B2 JP2014040989A JP2014040989A JP6189771B2 JP 6189771 B2 JP6189771 B2 JP 6189771B2 JP 2014040989 A JP2014040989 A JP 2014040989A JP 2014040989 A JP2014040989 A JP 2014040989A JP 6189771 B2 JP6189771 B2 JP 6189771B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 37
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
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- 238000001312 dry etching Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
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- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000012447 hatching Effects 0.000 description 3
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
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- 238000001039 wet etching Methods 0.000 description 3
- 229910001260 Pt alloy Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
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- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/1029—Channel region of field-effect devices of field-effect transistors
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- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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Description
<半導体装置の構造について>
本実施の形態の半導体装置を、図面を参照して説明する。図1および図2は、本実施の形態の半導体装置の要部断面図であり、図3および図4は、本実施の形態の半導体装置の要部平面図である。図3および図4のA−A線の断面図が、図1にほぼ対応し、図3および図4のB−B線の断面図が、図2にほぼ対応している。
次に、本実施の形態の半導体装置の製造工程を、図面を参照して説明する。図5〜図28は、本実施の形態の半導体装置の製造工程中の要部断面図である。なお、図5〜図28は、上記図3および図4のC−C線の位置での断面図にほぼ対応している。但し、図27および図28では、配線M2〜M4および開口部OP1,OP2は模式的に示したものであり、実際の配線M2〜M4および開口部OP1,OP2のレイアウト(平面位置および平面形状)については、図27および図28とは相違し得る。
次に、本発明者が検討した検討例について、図29〜図32を参照して説明する。
本実施の形態の半導体装置は、半導体基板SUBと、半導体基板SUBの表層部に互いに離間して形成されたソース用のn+型半導体領域SRおよびドレイン用のn+型半導体領域DRと、ソース用のn+型半導体領域SRとドレイン用のn+型半導体領域DRとの間の半導体基板SUBの主面上にゲート絶縁膜(絶縁膜GI)を介して形成されたゲート電極GEと、を有している。本実施の形態の半導体装置は、更に、ゲート電極GEの下のチャネル形成領域とドレイン用のn+型半導体領域DRとの間の半導体基板SUBの主面に形成されたLOCOS酸化膜2およびSTI絶縁膜3を有している。LOCOS酸化膜2およびSTI絶縁膜3のうち、LOCOS酸化膜2はチャネル形成領域側に位置し、STI絶縁膜3はドレイン用のn+型半導体領域DR側に位置している。
図36および図37は、本実施の形態の変形例の半導体装置の要部断面図であり、図36は、上記図1に相当する断面図であり、図37は、上記図2に相当する断面図である。
3,3a,103 STI絶縁膜
4 素子分離領域
5 DTI構造
6 単位セル
6a 単位LDMOSFET
CT コンタクトホール
CTS ソース用コンタクトホール
CTD ドレイン用コンタクトホール
DR n+型半導体領域
DR1 p+型半導体領域
EP エピタキシャル層
EP1 p-型エピタキシャル層
EX1,EX2 n-型半導体領域
GE ゲート電極
GI 絶縁膜
HNW n型ウエル
IL1,IL2,IL3,IL4,IL5,IL6,IL7,IL8 絶縁膜
IL9 樹脂膜
KG 空隙
L1,L2 寸法
M1,M2,M3,M4 配線
M1D ドレイン用配線
M1G ゲート用配線
M1S ソース用配線
ME 金属膜
NB 埋込層
NF n-型半導体領域
NF1 p-型半導体領域
NW n型半導体領域
NW1 p型半導体領域
OP1,OP2 開口部
PG,PG2,PG3,PG4 プラグ
PGD ドレイン用プラグ
PGG ゲート用プラグ
PGK 給電用プラグ
PGS ソース用プラグ
PR p+型半導体領域
PR1 n+型半導体領域
PS1,PS2 シリコン膜
PW p型ウエル
PW1 n型ウエル
R1 比
RP1,RP2 フォトレジスト層
SB 基板本体
SL 金属シリサイド層
SN 窒化シリコン膜
SR n+型半導体領域
SR1 p+型半導体領域
SUB 半導体基板
SW サイドウォールスペーサ
TB1,TB1a,TB1b,TB2,TB4,TB5 下面端部
TB3,TB6 上面端部
TR1,TR2 溝
W1 幅
W2 距離
W3 間隔
Claims (11)
- 半導体基板と、
前記半導体基板の表層部に互いに離間して形成されたソース用の第1導電型の第1半導体領域およびドレイン用の前記第1導電型の第2半導体領域と、
前記第1半導体領域と前記第2半導体領域との間の前記半導体基板の主面上にゲート絶縁膜を介して形成されたゲート電極と、
前記ゲート電極の下のチャネル形成領域と前記第2半導体領域との間の前記半導体基板の主面に形成されたLOCOS酸化膜およびSTI絶縁膜と、
を有し、
前記LOCOS酸化膜および前記STI絶縁膜のうち、前記LOCOS酸化膜は前記チャネル形成領域側に位置し、前記STI絶縁膜は前記第2半導体領域側に位置している、半導体装置。 - 請求項1記載の半導体装置において、
前記ゲート電極の一部は、前記LOCOS酸化膜上に乗り上げている、半導体装置。 - 請求項1記載の半導体装置において、
前記チャネル形成領域と前記第2半導体領域との間の前記半導体基板に形成された、前記第1導電型の第3半導体領域を更に有し、
前記第3半導体領域の不純物濃度は、前記第2半導体領域の不純物濃度よりも低く、
前記第3半導体領域は、前記LOCOS酸化膜および前記STI絶縁膜の下に延在している、半導体装置。 - 請求項3記載の半導体装置において、
前記第3半導体領域は、前記第1導電型の第4半導体領域と、前記第1導電型の第5半導体領域とからなり、
前記第4半導体領域の不純物濃度は、前記第2半導体領域の不純物濃度よりも低く、
前記第5半導体領域の不純物濃度は、前記第4半導体領域の不純物濃度よりも低く、
前記チャネル形成領域側に前記第5半導体領域が存在し、
前記第2半導体領域と前記第5半導体領域との間に前記第4半導体領域が介在している、半導体装置。 - 請求項1記載の半導体装置において、
前記半導体基板に形成された前記第1導電型とは反対の第2導電型の第6半導体領域を更に有し、
前記第1半導体領域は前記第6半導体領域内に形成され、
前記ゲート電極の一部は、前記ゲート絶縁膜を介して前記第6半導体領域上に延在している、半導体装置。 - 請求項5記載の半導体装置において、
前記半導体基板の前記第6半導体領域内に形成された前記第2導電型の第7半導体領域を更に有し、
前記第7半導体領域の不純物濃度は、前記第6半導体領域の不純物濃度よりも高く、
前記第1半導体領域と前記第7半導体領域とには同電位が供給される、半導体装置。 - 請求項1記載の半導体装置において、
前記半導体基板上に、前記ゲート電極を覆うように形成された層間絶縁膜と、
前記第2半導体領域上の前記層間絶縁膜に形成された第1コンタクトホールと、
前記第1コンタクトホールに埋め込まれて前記第2半導体領域と電気的に接続された導電性の第1プラグと、
を更に有する、半導体装置。 - 請求項7記載の半導体装置において、
前記第1半導体領域上の前記層間絶縁膜に形成された第2コンタクトホールと、
前記第2コンタクトホールに埋め込まれて前記第1半導体領域と電気的に接続された導電性の第2プラグと、
を更に有する、半導体装置。 - 請求項1記載の半導体装置において、
前記LOCOS酸化膜の深さをD1とし、前記STI絶縁膜の深さをD2としたときに、D2/D1≦1.5が成り立つ、半導体装置。 - 請求項1記載の半導体装置において、
前記ゲート電極は、前記チャネル形成領域と前記第2半導体領域との間に配置された前記LOCOS酸化膜上に乗り上げているが、前記チャネル形成領域と前記第2半導体領域との間に配置された前記STI絶縁膜上には乗り上げていない、半導体装置。 - 請求項10記載の半導体装置において、
前記ゲート電極の端部は、前記チャネル形成領域と前記第2半導体領域との間に配置された前記STI絶縁膜から、0.3μm以上離間されている、半導体装置。
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