JP6175313B2 - Package and electronic equipment - Google Patents
Package and electronic equipment Download PDFInfo
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- JP6175313B2 JP6175313B2 JP2013176889A JP2013176889A JP6175313B2 JP 6175313 B2 JP6175313 B2 JP 6175313B2 JP 2013176889 A JP2013176889 A JP 2013176889A JP 2013176889 A JP2013176889 A JP 2013176889A JP 6175313 B2 JP6175313 B2 JP 6175313B2
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- getter
- lid
- package
- metal layer
- recess
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- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 238000007789 sealing Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 37
- 238000005219 brazing Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004020 conductor Substances 0.000 description 21
- 239000000919 ceramic Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 10
- 239000000843 powder Substances 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/163—Connection portion, e.g. seal
Landscapes
- Gyroscopes (AREA)
- Light Receiving Elements (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
本発明は、加速度センサ、赤外線センサ、ジャイロセンサおよび水晶振動子のようなデバイスを真空封止するパッケージおよび電子装置に関するものである。 The present invention relates to a package and an electronic apparatus for vacuum-sealing devices such as an acceleration sensor, an infrared sensor, a gyro sensor, and a crystal resonator.
加速度センサ、赤外線センサ、ジャイロセンサ及び水晶振動子のようなデバイスが内部に封止されたパッケージにおいては、上述のデバイスの特性を高めるため、パッケージ内部の内圧を小さくすることが求められている。パッケージ内の内圧を高めるため、特許文献１に開示されているように、パッケージ内にゲッター材を配設することが知られている。ゲッター材を配設することにより、パッケージ内に存在する気体分子がゲッター材に吸着されるので、パッケージ内の内圧を小さくすることができる。また、特許文献１においては、パッケージと蓋体とをろう材により封止している。 In a package in which devices such as an acceleration sensor, an infrared sensor, a gyro sensor, and a crystal resonator are sealed, it is required to reduce the internal pressure inside the package in order to improve the characteristics of the device. In order to increase the internal pressure in the package, it is known that a getter material is disposed in the package as disclosed in Patent Document 1. By disposing the getter material, gas molecules existing in the package are adsorbed by the getter material, so that the internal pressure in the package can be reduced. In Patent Document 1, the package and the lid are sealed with a brazing material.
しかしながら、特許文献１に開示されているパッケージでは、気体分子を吸着するためのゲッターが、電子装置の低背化（小型化）のために蓋体の内面に配置されているが、蓋体の内面はゲッターを配置できる面積が限られており、充分な量のゲッターを配置することができなかった。また、充分な量のゲッターを配置しようとする場合には、従来から、赤外線センサ素子が封止された空間内にゲッターを取り付ける金具を配置し、バルク型ゲッターを溶接によって取りつける方法が採用されていたが、この方法では封止空間を広く形成しなくてはならないので、装置の小型化が困難であった。また、パッケージと蓋体とをろう材により封止する際に、蓋体が傾いてろう材に空隙が形成されて封止が不十分となり、パッケージ内の内圧を小さくすることが困難であった。 However, in the package disclosed in Patent Document 1, the getter for adsorbing gas molecules is arranged on the inner surface of the lid for reducing the height (miniaturization) of the electronic device. The inner surface has a limited area where getters can be placed, and a sufficient amount of getters cannot be placed. In addition, when a sufficient amount of getters are to be arranged, conventionally, a method of arranging a metal fitting for attaching a getter in a space where an infrared sensor element is sealed and attaching a bulk type getter by welding has been adopted. However, in this method, since the sealing space has to be formed widely, it is difficult to reduce the size of the apparatus. Further, when the package and the lid are sealed with the brazing material, the lid is inclined and a gap is formed in the brazing material, resulting in insufficient sealing, making it difficult to reduce the internal pressure in the package. .
本発明のパッケージは、デバイスを搭載する凹部を有する絶縁基体と、平面視で前記凹部の周囲の前記絶縁基体の上面に枠状に形成された封止用金属層と、平面視で該封止用金属層の内側の前記絶縁基体の上面に搭載された枠状のゲッターとを含み、該ゲッターは、該ゲッターの外側面と前記封止用金属層とに接するろう材で前記絶縁基体に固定されており、前記凹部を封止する蓋体が設けられ、前記ゲッターの上面に前記蓋体が接し、下面に前記絶縁基体が接している。
The package of the present invention includes an insulating substrate having a recess for mounting a device, a sealing metal layer formed in a frame shape on the upper surface of the insulating substrate around the recess in plan view, and the sealing in plan view. A frame-like getter mounted on the upper surface of the insulating base inside the metal layer, and the getter is fixed to the insulating base with a brazing material in contact with the outer surface of the getter and the metal layer for sealing. A lid for sealing the recess is provided, the lid is in contact with the upper surface of the getter, and the insulating base is in contact with the lower surface .
本発明の電子装置は、上記構成のパッケージと、前記凹部に搭載された前記デバイスとを有している。
Electronic device of the present invention includes a package having the above structure, and the device mounted in the recess.
本発明のパッケージは、デバイスを搭載する凹部を有する絶縁基体と、平面視で凹部の周囲の絶縁基体の上面に枠状に形成された封止用金属層と、平面視で封止用金属層の内側の絶縁基体の上面に搭載された枠状のゲッターとを含み、ゲッターは、ゲッターの外側面と封止用金属層とに接するろう材で絶縁基体に固定されており、凹部を封止する蓋体が設けられ、ゲッターの上面に蓋体が接し、下面に絶縁基体が接している。これらによって、電子装置の小型化を可能にしつつ、充分な量のゲッターを配置することが可能となるとともに、ろう材によるパッケージと蓋体との封止が十分なものとなり、パッケージ内の内圧を効果的に小さくすることが可能となるものである。
The package of the present invention includes an insulating substrate having a recess for mounting a device, a sealing metal layer formed in a frame shape on the upper surface of the insulating substrate around the recess in plan view, and a sealing metal layer in plan view The getter is fixed to the insulating substrate with a brazing material in contact with the outer surface of the getter and the sealing metal layer, and seals the recess. The lid body is provided, the lid body is in contact with the upper surface of the getter, and the insulating base is in contact with the lower surface . As a result, it is possible to arrange a sufficient amount of getters while miniaturizing the electronic device, and to sufficiently seal the package and the lid with the brazing material, thereby reducing the internal pressure in the package. It can be effectively reduced.
本発明の電子装置は、上記構成のパッケージと、凹部に搭載されたデバイスとを有していることによって、電子装置の小型化および充分な量のゲッターの配置を可能にしつつ、パッケージ内の内圧を効果的に小さくすることが可能となるものである。 Electronic device of the present invention, a package having the above structure, by having a device mounted in the recess, while allowing the placement of getter miniaturization and sufficient amount of an electronic device, the internal pressure in the package Can be effectively reduced.
以下、本発明の例示的な実施形態について図面を参照して説明する。 Hereinafter, exemplary embodiments of the present invention will be described with reference to the drawings.
図１〜３を参照して本発明の実施形態における電子装置について説明する。なお、便宜上図１（ａ）においては蓋体を除いた電子装置の平面図を示しており、図１（ｂ）においては、蓋体で封止した電子装置の縦断面図を示している。本実施形態における電子装置は、パッケージ１と、デバイス２と、蓋体３とを有している。 An electronic device according to an embodiment of the present invention will be described with reference to FIGS. For convenience, FIG. 1A shows a plan view of the electronic device excluding the lid, and FIG. 1B shows a longitudinal sectional view of the electronic device sealed with the lid. The electronic apparatus according to the present embodiment includes a package 1, a device 2, and a lid 3.
パッケージ１は、デバイス２を搭載する凹部４ａを有する絶縁基体４と、封止用金属層４ｂと、ゲッター５とを有している。 The package 1 includes an insulating base 4 having a recess 4 a for mounting the device 2, a sealing metal layer 4 b, and a getter 5.
絶縁基体４は、例えば、セラミックスからなる絶縁基体４の表面や内部に封止用金属層４ｂ、配線導体、外部端子が形成されたものである。また、絶縁基体４は、酸化アルミニウム質焼結体（アルミナセラミックス），窒化アルミニウム質焼結体，ムライト質焼結体もしくはガラスセラミックス質焼結体等のセラミックスから成るものである。 The insulating substrate 4 is formed by forming a sealing metal layer 4b, a wiring conductor, and an external terminal on the surface or inside of an insulating substrate 4 made of ceramics, for example. The insulating substrate 4 is made of a ceramic such as an aluminum oxide sintered body (alumina ceramic), an aluminum nitride sintered body, a mullite sintered body, or a glass ceramic sintered body.
絶縁基体４が、例えば、酸化アルミニウム質焼結体からなる場合には、アルミナ（Ａｌ２Ｏ３），シリカ（ＳｉＯ２），カルシア（ＣａＯ），マグネシア（ＭｇＯ）等の原料粉末に適当な有機溶剤および溶媒等を添加混合して泥漿状となすとともに、これをドクターブレード法やカレンダーロール法等を採用してシート状に成形してセラミックグリーンシートを得た後、このセラミックグリーンシートに適当な打ち抜き加工を施すとともに必要に応じて複数枚積層して積層体とし、これを高温（約1500〜1800℃）で焼成することによって製作される。 When the insulating substrate 4 is made of, for example, an aluminum oxide sintered body, an organic material suitable for a raw material powder such as alumina (Al 2 O 3 ), silica (SiO 2 ), calcia (CaO), magnesia (MgO), etc. A solvent and a solvent are added and mixed to form a slurry, and this is formed into a sheet by using a doctor blade method, a calender roll method, etc. to obtain a ceramic green sheet, and then suitable for this ceramic green sheet. It is manufactured by punching and laminating a plurality of sheets as necessary to form a laminated body and firing it at a high temperature (about 1500 to 1800 ° C.).
封止用金属層４ｂ、配線導体、外部端子は、タングステン（Ｗ），モリブデン（Ｍｏ），マンガン（Ｍｎ），銀（Ａｇ）または銅（Ｃｕ）等の金属粉末メタライズから成り、絶縁基体４用のセラミックグリーンシートに封止用金属層４ｂ、配線導体、外部端子用の導体ペーストをスクリーン印刷法等によって所定形状に印刷して、絶縁基体４用のセラミックグリーンシートと同時に焼成することによって、絶縁基体４の所定位置に形成される。配線導体のうち、セラミックグリーンシートを厚み方向に貫通する貫通導体は、導体ペーストを印刷することによってセラミックグリーンシートに形成した貫通孔を充填しておけばよい。なお、封止用金属層４ｂは、平面視で凹部４ａ周囲の絶縁基体４の上面に枠状に形成されている。 The sealing metal layer 4b, the wiring conductor, and the external terminal are made of metal powder metallization such as tungsten (W), molybdenum (Mo), manganese (Mn), silver (Ag), or copper (Cu), and are used for the insulating substrate 4. Insulating the ceramic green sheet by printing a sealing metal layer 4b, a wiring conductor, and a conductor paste for external terminals in a predetermined shape by screen printing or the like, and firing the ceramic green sheet for the insulating substrate 4 at the same time. It is formed at a predetermined position of the substrate 4. Of the wiring conductors, the through conductors that penetrate the ceramic green sheet in the thickness direction may be filled with the through holes formed in the ceramic green sheet by printing the conductor paste. The sealing metal layer 4b is formed in a frame shape on the upper surface of the insulating substrate 4 around the recess 4a in plan view.
このような導体ペーストは、上記金属粉末に適当な有機溶剤および有機バインダーを加え、必要に応じて分散剤等を加えてボールミル，三本ロールミル，プラネタリーミキサー
等の混練手段によって混合および混練することで適度な粘度に調整して作製する。また、セラミックグリーンシートの焼結挙動に合わせたり、焼成後の絶縁基体４との接合強度を高めたりするためにガラスやセラミックスの粉末を添加してもよい。貫通導体用の導体ペーストは、有機バインダーや有機溶剤の種類や添加量によって、配線導体層用の導体ペーストよりも充填に適した高い粘度に調整される。
Such a conductor paste is mixed and kneaded by a kneading means such as a ball mill, a three-roll mill, a planetary mixer, etc., with an appropriate organic solvent and organic binder added to the above metal powder, and a dispersant added as necessary. And adjusted to an appropriate viscosity. Further, glass or ceramic powder may be added to match the sintering behavior of the ceramic green sheet or to increase the bonding strength with the insulating substrate 4 after firing. The conductor paste for the through conductor is adjusted to have a higher viscosity suitable for filling than the conductor paste for the wiring conductor layer, depending on the type and addition amount of the organic binder and organic solvent.
封止用金属層４ｂ、配線導体、外部端子の露出する表面には、電解めっき法や無電解めっき法等のめっき法によって、めっき層が被着される。めっき層は、ニッケルおよび金等の耐蝕性や接続部材等との接続性に優れる金属からなるものであり、例えば、厚さ１〜10μｍ程度のニッケルめっき層と厚さ0.1〜３μｍ程度の金めっき層とが順次被着される。
これによって、封止用金属層４ｂ、配線導体、外部端子が腐食することを効果的に抑制することができるとともに、ろう材６を介して凹部４ａを封止する蓋体３との接合、接続部材７との接合および外部端子と外部電気回路基板の配線との接続を強固にすることができる。
A plating layer is deposited on the exposed surfaces of the sealing metal layer 4b, the wiring conductor, and the external terminal by a plating method such as an electrolytic plating method or an electroless plating method. The plating layer is made of a metal having excellent corrosion resistance such as nickel and gold and connectivity with a connecting member, for example, a nickel plating layer having a thickness of about 1 to 10 μm and a gold plating having a thickness of about 0.1 to 3 μm. The layers are deposited sequentially.
As a result, corrosion of the sealing metal layer 4b, the wiring conductor, and the external terminal can be effectively suppressed, and the bonding and connection with the lid 3 that seals the recess 4a via the brazing material 6 can be achieved. The connection with the member 7 and the connection between the external terminal and the wiring of the external electric circuit board can be strengthened.
ゲッター５は、平面視で封止用金属層４ｂの内側の絶縁基体４の上面に枠状に搭載されており、ゲッター５の外側面と封止用金属層４ｂとに接するろう材６で絶縁基体４に固定されている。これらによって、電子装置の小型化を可能にしつつ、充分な量のゲッター５を配置することが可能となるとともに、ろう材６によるパッケージ１と蓋体３との封止が十分なものとなり、パッケージ内の内圧を効果的に小さくすることが可能となる。 The getter 5 is mounted in a frame shape on the upper surface of the insulating base 4 inside the sealing metal layer 4b in a plan view, and is insulated by the brazing material 6 in contact with the outer surface of the getter 5 and the sealing metal layer 4b. It is fixed to the base 4. As a result, it is possible to arrange a sufficient amount of getters 5 while enabling downsizing of the electronic device and sufficient sealing of the package 1 and the lid 3 with the brazing material 6. The internal pressure can be effectively reduced.
ゲッター５の材料としては、化学的に活性な部材を用いる。具体的には、チタン（Ｔｉ），ジルコニウム（Ｚｒ），鉄（Ｆｅ）およびバナジウム（Ｖ）を主成分とする金属を用いることができる。そして、上記の金属の粉末をニトロセルロース樹脂およびエチルセルロース樹脂等の有機溶剤と混合して導体ペーストを作製し、この導体ペーストをスクリーン印刷法等の印刷法によって、貫通孔が形成された鉄（Ｆｅ），タングステン（Ｗ），ニクロムまたはステンレス等からなる金属板の表面に所望の位置および厚さに印刷した後、不活性ガス雰囲気中（例えばアルゴン（Ａｒ）雰囲気中）や真空雰囲気中で250〜500℃で加熱して、有機溶剤を蒸発させて除去することによって、ゲッター材料を金属板の両面に配置したゲッター５を得ることができる。ゲッター材料を金属板の表面に配置する方法としては、一般的な蒸着法またはスパッタリング法で行ってもよい。 As a material for the getter 5, a chemically active member is used. Specifically, a metal having titanium (Ti), zirconium (Zr), iron (Fe), and vanadium (V) as main components can be used. Then, a conductive paste is prepared by mixing the above metal powder with an organic solvent such as a nitrocellulose resin and an ethylcellulose resin, and this conductive paste is made of iron (Fe) with through holes formed by a printing method such as a screen printing method. ), Tungsten (W), nichrome or stainless steel, etc., after printing at a desired position and thickness, in an inert gas atmosphere (for example, in an argon (Ar) atmosphere) or in a vacuum atmosphere. By heating at 500 ° C. and evaporating and removing the organic solvent, the getter 5 in which the getter material is arranged on both surfaces of the metal plate can be obtained. As a method for arranging the getter material on the surface of the metal plate, a general vapor deposition method or a sputtering method may be used.
なお、ゲッター５は、上面に蓋体３、下面に絶縁基体４が接するようにして固定されているが、枠状のゲッター５の上面および下面が凹凸を有しているため、ゲッター５の内側面および上面および下面においても封止空間内に存在する気体分子を吸着することが可能となっている。電子装置内に存在する気体分子としては、電子装置の製造時及び使用時において、パッケージ１、蓋体３、接合部材１３およびろう材６のような電子装置を構成する部材から発生するガス等である。 The getter 5 is fixed so that the lid 3 is in contact with the upper surface and the insulating base 4 is in contact with the lower surface. However, since the upper and lower surfaces of the frame-like getter 5 have irregularities, Gas molecules existing in the sealed space can be adsorbed also on the side surface, the upper surface, and the lower surface. Gas molecules present in the electronic device include gas generated from members constituting the electronic device such as the package 1, the lid 3, the joining member 13, and the brazing material 6 during the manufacture and use of the electronic device. is there.
また、ゲッター５はろう材６のすぐ内側に位置しているので、ろう材６から発生するガス等の気体分子を効率よく吸着することができる。 In addition, since the getter 5 is located immediately inside the brazing material 6, gas molecules such as gas generated from the brazing material 6 can be adsorbed efficiently.
また、パッケージ１と蓋体３とをろう材６により封止する際に、絶縁基体４に固定された枠状のゲッター５により蓋体が傾くことはなくなり、ろう材６によるパッケージ１と蓋体３との封止が十分なものとなり、パッケージ１内の内圧を小さくすることが可能となっている。 Further, when the package 1 and the lid 3 are sealed with the brazing material 6, the lid body is not inclined by the frame-shaped getter 5 fixed to the insulating base 4, and the package 1 and the lid body by the brazing material 6 are prevented. 3 is sufficient, and the internal pressure in the package 1 can be reduced.
また、図２および図３に示される例のように、ゲッター５搭載面からゲッター５上面までの高さＨ１がゲッター５搭載面から封止用金属層４ｂ上面までの高さＨ２より高い（Ｈ１＞Ｈ２）、すなわちゲッター５の上面が封止用金属層４ｂの上面より上に位置している
と、封止用金属層４ｂに対してゲッター５が突出したものとなるため、パッケージ１と蓋体３とをろう材６により封止する際に、絶縁基体４に固定された枠状のゲッター５により蓋体が傾くことを効果的に防止することが可能となり、ろう材６によるパッケージ１と蓋体３との封止が確実に行われるものとなって、パッケージ１内の内圧を効果的に小さくすることが可能となり、好ましい。
2 and 3, the height H1 from the getter 5 mounting surface to the top surface of the getter 5 is higher than the height H2 from the getter 5 mounting surface to the top surface of the sealing metal layer 4b (H1). > H2), that is, when the upper surface of the getter 5 is located above the upper surface of the sealing metal layer 4b, the getter 5 protrudes from the sealing metal layer 4b. When the body 3 is sealed with the brazing material 6, it is possible to effectively prevent the lid from being inclined by the frame-like getter 5 fixed to the insulating base 4. Sealing with the lid 3 is surely performed, and the internal pressure in the package 1 can be effectively reduced, which is preferable.
なお、図３に示される例のように、凹部４ａの周囲の絶縁基体４の上面に、外側より内側の高さが低い段差を有していてもよい。この場合、段差の高さはゲッター５の上面が封止用金属層４ｂの上面より上に位置するように設けられている。また、このような段差が設けられていると、ゲッター５を搭載する際に位置決めを容易に行うことができ、好ましい。 Note that, as in the example shown in FIG. 3, the upper surface of the insulating base 4 around the recess 4a may have a step whose inner height is lower than that of the outer side. In this case, the height of the step is provided such that the upper surface of the getter 5 is located above the upper surface of the sealing metal layer 4b. Further, it is preferable that such a step is provided because positioning can be easily performed when the getter 5 is mounted.
デバイス２は、加速度センサ、赤外線センサ、ジャイロセンサおよび水晶振動子等からなり、例えば、赤外線センサ用電子装置を作製する場合には、デバイス２として赤外線センサを凹部４ａ内に搭載すればよい。なお、加速度センサ用電子装置を作製する場合には、デバイス２として加速度センサを凹部４ａ内に搭載すればよい。デバイス２として赤外線センサを凹部４ａ内に搭載する場合には、赤外線センサは、上面に赤外線を受光するための受光部を有しており、絶縁基体４の凹部４ａの底面に、ろう材またははんだ等の接合材を介して接合されて配置されている。また、赤外線センサは例えばボンディングワイヤからなる接続部材７によって配線導体に電気的に接続されている。 The device 2 includes an acceleration sensor, an infrared sensor, a gyro sensor, a crystal resonator, and the like. For example, when an electronic device for an infrared sensor is manufactured, the infrared sensor may be mounted as the device 2 in the recess 4a. In addition, when producing the electronic device for acceleration sensors, what is necessary is just to mount an acceleration sensor in the recessed part 4a as the device 2. FIG. When the infrared sensor is mounted in the recess 4a as the device 2, the infrared sensor has a light receiving portion for receiving infrared rays on the upper surface, and a brazing material or solder is provided on the bottom surface of the recess 4a of the insulating base 4. It is joined and disposed via a joining material such as. The infrared sensor is electrically connected to the wiring conductor by a connecting member 7 made of, for example, a bonding wire.
蓋体３は、凹部４ａを封止するようにパッケージ１上に配置されている。蓋体３としては、例えば、セラミックス及びガラスのような絶縁部材、シリコンのような光学部材並びに金属部材を用いることができる。また、上記の部材を組み合わせて接合したものであってもよい。 The lid 3 is disposed on the package 1 so as to seal the recess 4a. As the lid 3, for example, an insulating member such as ceramics and glass, an optical member such as silicon, and a metal member can be used. Moreover, what joined and combined said member may be used.
蓋体３として、セラミックス及びガラスのような絶縁部材およびシリコンのような光学部材を用いる場合には、パッケージ１との接合箇所にメタライズ層が形成されたものを用いることが好ましい。これにより、パッケージ１と蓋体３の接合性を高めることができるからである。蓋体３として光学部材を用いる場合には、この光学部材の表面に特定の波長帯の光を透過するような金属がコーティングされていてもよい。また、蓋体３として光学部材を用いる場合には、蓋体３がレンズ形状であってもよい。 In the case where an insulating member such as ceramics and glass and an optical member such as silicon are used as the lid 3, it is preferable to use a member in which a metallized layer is formed at a joint portion with the package 1. This is because the bondability between the package 1 and the lid 3 can be improved. When an optical member is used as the lid 3, the surface of the optical member may be coated with a metal that transmits light in a specific wavelength band. Further, when an optical member is used as the lid 3, the lid 3 may have a lens shape.
次に、本発明の電子装置の製造方法について詳細に説明する。 Next, the method for manufacturing an electronic device according to the present invention will be described in detail.
凹部４ａおよび封止用金属層４ｂ、配線導体、外部端子を形成した絶縁基体４を準備する。具体的には、アルミナセラミックスまたはムライトセラミックス等のセラミックス材料を主成分とするセラミックグリーンシートを準備し、凹部４ａの側壁となる部位の打ち抜き金型を用いた打ち抜き加工を施すとともに、セラミックグリーンシートにＷ，Ｍｏ，Ｍｎ，ＡｇまたはＣｕ等の金属粉末メタライズから成る封止用金属層４ｂ用の導体ペーストを凹部４ａとなる箇所の周囲に枠状に、同様に、配線導体、外部端子用の導体ペーストを所定形状に、スクリーン印刷法等によって印刷する。その後、導体ペーストを印刷したセラミックグリーンシートを積層して、凹部４ａを有するように積層体を作製する。そして、この積層体を焼成することによって、絶縁基体４を作製することができる。 An insulating substrate 4 on which a recess 4a, a sealing metal layer 4b, a wiring conductor, and external terminals are formed is prepared. Specifically, a ceramic green sheet mainly composed of a ceramic material such as alumina ceramics or mullite ceramics is prepared, and punching is performed using a punching die at a portion serving as a side wall of the recess 4a. A conductor paste for the sealing metal layer 4b made of metal powder metallization such as W, Mo, Mn, Ag, or Cu is formed in a frame shape around the portion to be the recess 4a, and similarly, a conductor for a wiring conductor and an external terminal. The paste is printed in a predetermined shape by a screen printing method or the like. Then, the ceramic green sheet which printed the conductor paste is laminated | stacked, and a laminated body is produced so that it may have the recessed part 4a. Then, the insulating substrate 4 can be produced by firing this laminate.
次に、凹部４ａの底面に、Ａｕ，Ａｇ，Ｚｎ，Ｓｎ，Ｃｕおよびこれらの合金を主成分とする金属からなる、ろう材またははんだ等の接合材を介して、赤外線センサ等のデバイス２を搭載する。また、デバイス２は、絶縁基体４上に形成された配線導体にワイヤボンディング、フリップチップ実装によって電気的に接続される。 Next, the device 2 such as an infrared sensor is attached to the bottom surface of the concave portion 4a via a bonding material such as a brazing material or solder made of a metal mainly composed of Au, Ag, Zn, Sn, Cu and alloys thereof. Mount. The device 2 is electrically connected to a wiring conductor formed on the insulating substrate 4 by wire bonding or flip chip mounting.
次に、封止用金属層４ｂの内側の絶縁基体４の上面に枠状のゲッターを配置するとともに、凹部４ａを封止するように絶縁基体４上に蓋体３を配置する。蓋体３は、デバイス２として赤外線センサを用いる場合には、赤外線を透過するとともに凹部４ａを封止することができるものであればよい。例えば、Ｇｅ，Ｓｉ，ＺｎＳまたはこれらの金属を含む合金を主成分とする板状の部材を用いることができる。 Next, a frame-like getter is disposed on the upper surface of the insulating substrate 4 inside the sealing metal layer 4b, and the lid 3 is disposed on the insulating substrate 4 so as to seal the recess 4a. In the case where an infrared sensor is used as the device 2, the lid 3 only needs to transmit infrared rays and seal the recess 4 a. For example, a plate-like member whose main component is Ge, Si, ZnS or an alloy containing these metals can be used.
このとき、ろう材６を用いて絶縁基体４と蓋体８とを接合する。ろう材６としては、例えば、プリフォームされたもの、蓋体３にクラッドされたものまたはペースト状のものを用いることができる。また、このようなろう材６は、絶縁基体４の封止用金属層４ｂと蓋体３のメタライズ層との接合面に配置してもよいし、ペースト状としたろう材６を用いて印刷法によって絶縁基体４と蓋体３との接合面に配置してもよい。そして、絶縁基体４と蓋体３との接合面に配置されたろう材６を、赤外線のランプヒータ，ヒータブロックまたはヒータープレート等を用いて加熱して溶融させることによって、絶縁基体４と蓋体３とをろう材６を介して接合することができる。このとき、枠状のゲッター５は、ゲッター５の外側面と封止用金属層４ｂとに接するろう材６で絶縁基体４に固定されている。 At this time, the insulating base 4 and the lid 8 are joined using the brazing material 6. As the brazing material 6, for example, a preformed material, a material clad on the lid 3, or a paste material can be used. Further, such a brazing material 6 may be disposed on the joint surface between the sealing metal layer 4b of the insulating base 4 and the metallized layer of the lid 3 or may be printed using the paste-like brazing material 6. You may arrange | position to the joint surface of the insulation base | substrate 4 and the cover body 3 by the method. Then, the brazing material 6 disposed on the joint surface between the insulating base 4 and the lid 3 is heated and melted using an infrared lamp heater, a heater block, a heater plate or the like, so that the insulating base 4 and the lid 3 are melted. Can be joined via the brazing material 6. At this time, the frame-like getter 5 is fixed to the insulating base 4 with a brazing material 6 in contact with the outer surface of the getter 5 and the sealing metal layer 4b.
なお、蓋体３を用いて凹部４ａを封止する工程は、常圧よりも低い圧力の下で行なう。具体的には、真空チャンバー等の減圧装置を用いることにより、常圧よりも低い圧力の下で凹部４ａを封止する。このときの真空度は、減圧装置を用いることによって、要求される封止空間の内圧に応じて適宜設定すればよい。 In addition, the process of sealing the recessed part 4a using the cover body 3 is performed under pressure lower than normal pressure. Specifically, the recess 4a is sealed under a pressure lower than normal pressure by using a decompression device such as a vacuum chamber. What is necessary is just to set the vacuum degree at this time suitably according to the internal pressure of the sealing space requested | required by using a decompression device.
なお、このようにして電子装置を製造する過程において、ゲッター５を加熱する工程を備えていることが好ましい。ゲッター５を加熱することによって、ゲッター５の表面に新しい活性面を形成できるので、ゲッター５による気体分子を吸着する効果を向上させることができる。 In the process of manufacturing the electronic device in this way, it is preferable to include a step of heating the getter 5. By heating the getter 5, a new active surface can be formed on the surface of the getter 5, so that the effect of adsorbing gas molecules by the getter 5 can be improved.
特に、蓋体３と絶縁基体４とを接合する工程においてゲッター５を加熱することによって、ゲッター５を活性化することが好ましい。蓋体３と絶縁基体４とを接合する工程においては、絶縁基体４および蓋体３を加熱することによって絶縁基体４と蓋体３とを接合するので、絶縁基体４および蓋体３ならびにろう材６からガスが発生しやすい。そのため、蓋体３と絶縁基体４とを接合する工程においてゲッター５を活性化させることによって、ゲッター５による気体分子を吸着する効果を高めることができるので、電子装置の封止空間の内圧をより小さくすることができるからである。 In particular, it is preferable to activate the getter 5 by heating the getter 5 in the step of bonding the lid 3 and the insulating base 4. In the step of bonding the lid 3 and the insulating base 4, the insulating base 4 and the lid 3 are bonded by heating the insulating base 4 and the lid 3. 6 is easy to generate gas. Therefore, by activating the getter 5 in the step of joining the lid 3 and the insulating base 4, the effect of adsorbing gas molecules by the getter 5 can be enhanced, so that the internal pressure of the sealing space of the electronic device can be further increased. This is because it can be made smaller.
なお、本発明は、上記の実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内で種々の変更を行うことは何ら差し支えない。 Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention.
１・・・・パッケージ
２・・・・デバイス
３・・・・蓋体
４・・・・絶縁基体
４ａ・・・凹部
４ｂ・・・封止用金属層
５・・・・ゲッター
６・・・・ろう材
DESCRIPTION OF SYMBOLS 1 ... Package 2 ... Device 3 ... Cover body 4 ... Insulating substrate 4a ... Recess 4b ... Metal layer 5 for sealing ... Getter 6 ...・ Brazing material
Claims (3)
平面視で前記凹部の周囲の前記絶縁基体の上面に枠状に形成された封止用金属層と、
平面視で該封止用金属層の内側の前記絶縁基体の上面に搭載された枠状のゲッターとを含み、
該ゲッターは、該ゲッターの外側面と前記封止用金属層とに接するろう材で前記絶縁基体に固定されており、
前記凹部を封止する蓋体が設けられ、
前記ゲッターの上面に前記蓋体が接し、下面に前記絶縁基体が接していることを特徴とするパッケージ。 An insulating substrate having a recess for mounting the device;
A metal layer for sealing formed in a frame shape on the upper surface of the insulating base around the recess in plan view;
A frame-like getter mounted on the upper surface of the insulating base inside the sealing metal layer in plan view,
The getter is fixed to the insulating base with a brazing material in contact with the outer surface of the getter and the sealing metal layer ,
A lid for sealing the recess is provided;
A package , wherein the lid is in contact with an upper surface of the getter and the insulating base is in contact with a lower surface .
前記凹部に搭載された前記デバイスとを有することを特徴とする電子装置。 A package according to claim 1;
Electronic device characterized in that it comprises a said device is mounted in the recess.
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