JP6169182B2 - ゲルマニウム層を熱処理する半導体基板の製造方法および半導体装置の製造方法 - Google Patents
ゲルマニウム層を熱処理する半導体基板の製造方法および半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6169182B2 JP6169182B2 JP2015544904A JP2015544904A JP6169182B2 JP 6169182 B2 JP6169182 B2 JP 6169182B2 JP 2015544904 A JP2015544904 A JP 2015544904A JP 2015544904 A JP2015544904 A JP 2015544904A JP 6169182 B2 JP6169182 B2 JP 6169182B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heat treatment
- germanium
- oxygen concentration
- mobility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 217
- 229910052732 germanium Inorganic materials 0.000 title claims description 117
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 117
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 133
- 239000001301 oxygen Substances 0.000 claims description 99
- 229910052760 oxygen Inorganic materials 0.000 claims description 99
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 90
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 56
- 239000007789 gas Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 17
- 230000007423 decrease Effects 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 description 46
- 229910052739 hydrogen Inorganic materials 0.000 description 46
- 238000010586 diagram Methods 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 13
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 13
- 239000000523 sample Substances 0.000 description 13
- 230000007547 defect Effects 0.000 description 12
- -1 oxygen ions Chemical class 0.000 description 10
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 10
- 239000013074 reference sample Substances 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000000089 atomic force micrograph Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28255—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor belonging to Group IV and not being elemental silicon, e.g. Ge, SiGe, SiGeC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
12 酸化ゲルマニウム膜
30 ゲルマニウム層
32 ゲート絶縁膜
34 ゲート電極
38 ソースまたはドレイン領域
Claims (14)
- 表面から1μmにおける酸素濃度が1×1016cm−3以上のシリコン組成比が10%以下の単結晶ゲルマニウム層を還元性ガス雰囲気中において、700℃以上において熱処理する工程を含み、
前記熱処理により、表面から1μmにおける前記ゲルマニウム層の酸素濃度は1×10 16 cm −3 より低くなることを特徴とする半導体基板の製造方法。 - 表面から1μmにおける酸素濃度が1×1016cm−3以上のシリコン組成比が10%以下の単結晶ゲルマニウム層を還元性ガス雰囲気中において、前記酸素濃度が減少するように熱処理する工程を含み、
前記熱処理により、表面から1μmにおける前記ゲルマニウム層の酸素濃度は1×10 16 cm −3 より低くなることを特徴とする半導体基板の製造方法。 - 前記熱処理する工程は、800℃以上において熱処理する工程であることを特徴とする請求項1記載の半導体基板の製造方法。
- 前記ゲルマニウム層は(111)面が主面であることを特徴とする請求項1から3のいずれか一項記載の半導体基板の製造方法。
- 前記還元性ガス雰囲気は水素ガス雰囲気であることを特徴とする請求項1から4のいずれか一項記載の半導体基板の製造方法。
- 前記ゲルマニウム層は単結晶ゲルマニウム基板であることを特徴とする請求項1から5のいずれか一項記載の半導体基板の製造方法。
- 請求項1から6のいずれか一項記載の半導体基板の製造方法により製造された半導体基板に半導体装置を形成する工程を含むことを特徴とする半導体装置の製造方法。
- 前記半導体装置を形成する工程は、
前記熱処理された前記ゲルマニウム層の表面に、ゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、を含むことを特徴とする請求項7記載の半導体装置の製造方法。 - 表面から1μmにおける酸素濃度は1×1016cm−3より低く、かつ前記表面から5μmにおける酸素濃度は1×10 16 cm −3 以上でありシリコン組成比が10%以下の単結晶ゲルマニウム層を具備することを特徴とする半導体基板。
- 前記表面から1μmにおける酸素濃度は4×1015cm−3以下であることを特徴とする請求項9記載の半導体基板。
- 前記ゲルマニウム層は(111)面が主面であることを特徴とする請求項9または10記載の半導体基板。
- 前記ゲルマニウム層は単結晶ゲルマニウム基板であることを特徴とする請求項9から11のいずれか一項記載の半導体基板。
- 請求項9から12のいずれか一項記載の半導体基板を備えることを特徴とする半導体装置。
- 前記ゲルマニウム層の表面に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極と、
を具備することを特徴とする請求項13記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013227559 | 2013-10-31 | ||
JP2013227559 | 2013-10-31 | ||
PCT/JP2014/077135 WO2015064338A1 (ja) | 2013-10-31 | 2014-10-10 | ゲルマニウム層を熱処理する半導体基板の製造方法および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015064338A1 JPWO2015064338A1 (ja) | 2017-03-09 |
JP6169182B2 true JP6169182B2 (ja) | 2017-07-26 |
Family
ID=53003948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015544904A Active JP6169182B2 (ja) | 2013-10-31 | 2014-10-10 | ゲルマニウム層を熱処理する半導体基板の製造方法および半導体装置の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9647074B2 (ja) |
EP (1) | EP3065163A4 (ja) |
JP (1) | JP6169182B2 (ja) |
KR (1) | KR101792066B1 (ja) |
CN (1) | CN105706218B (ja) |
TW (1) | TWI591731B (ja) |
WO (1) | WO2015064338A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016072398A1 (ja) * | 2014-11-05 | 2016-05-12 | 国立研究開発法人科学技術振興機構 | ゲルマニウム層をチャネル領域とする半導体装置およびその製造方法 |
JP6839939B2 (ja) * | 2016-07-26 | 2021-03-10 | 株式会社Screenホールディングス | 熱処理方法 |
JP6839940B2 (ja) * | 2016-07-26 | 2021-03-10 | 株式会社Screenホールディングス | 熱処理方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6562672B2 (en) * | 1991-03-18 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
JPH0582443A (ja) * | 1991-09-25 | 1993-04-02 | Nec Corp | シリコンゲルマニウム膜の製造方法 |
JP3614333B2 (ja) | 1999-12-08 | 2005-01-26 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型電界効果トランジスタ作製方法 |
US7071041B2 (en) * | 2000-01-20 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
JP2004103805A (ja) | 2002-09-09 | 2004-04-02 | Sharp Corp | 半導体基板の製造方法、半導体基板及び半導体装置 |
JP4227616B2 (ja) | 2003-03-26 | 2009-02-18 | 株式会社日立国際電気 | 基板処理装置及び半導体デバイスの製造方法 |
CN101165224A (zh) * | 2007-07-30 | 2008-04-23 | 浙江大学 | 一种具有内吸杂功能的掺锗硅片及其制备方法 |
CN103367115A (zh) | 2007-12-28 | 2013-10-23 | 住友化学株式会社 | 半导体基板、半导体基板的制造方法及电子器件 |
JP5436017B2 (ja) | 2008-04-25 | 2014-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN102171793A (zh) | 2008-10-02 | 2011-08-31 | 住友化学株式会社 | 半导体基板、电子器件、以及半导体基板的制造方法 |
JP2010103296A (ja) * | 2008-10-23 | 2010-05-06 | Hiroshima Univ | 酸化ゲルマニウムの製造方法およびそれを用いた半導体デバイスの製造方法 |
CN101423978A (zh) * | 2008-11-11 | 2009-05-06 | 浙江大学 | 一种具有高机械强度的掺锗直拉硅片及其制备方法 |
US8367517B2 (en) * | 2010-01-26 | 2013-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
EP2423951B1 (en) | 2010-08-05 | 2016-07-20 | Imec | Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof |
-
2014
- 2014-10-10 JP JP2015544904A patent/JP6169182B2/ja active Active
- 2014-10-10 WO PCT/JP2014/077135 patent/WO2015064338A1/ja active Application Filing
- 2014-10-10 CN CN201480059398.4A patent/CN105706218B/zh active Active
- 2014-10-10 KR KR1020167010034A patent/KR101792066B1/ko active IP Right Grant
- 2014-10-10 EP EP14857817.2A patent/EP3065163A4/en not_active Withdrawn
- 2014-10-10 US US15/031,437 patent/US9647074B2/en active Active
- 2014-10-17 TW TW103136023A patent/TWI591731B/zh active
Also Published As
Publication number | Publication date |
---|---|
JPWO2015064338A1 (ja) | 2017-03-09 |
US9647074B2 (en) | 2017-05-09 |
WO2015064338A1 (ja) | 2015-05-07 |
KR101792066B1 (ko) | 2017-11-01 |
CN105706218A (zh) | 2016-06-22 |
KR20160055918A (ko) | 2016-05-18 |
US20160276445A1 (en) | 2016-09-22 |
TWI591731B (zh) | 2017-07-11 |
EP3065163A4 (en) | 2017-07-12 |
TW201528384A (zh) | 2015-07-16 |
CN105706218B (zh) | 2018-09-25 |
EP3065163A1 (en) | 2016-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9704758B2 (en) | Forming a semiconductor structure for reduced negative bias temperature instability | |
US9219122B2 (en) | Silicon carbide semiconductor devices | |
TW200830551A (en) | Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator | |
US9825151B2 (en) | Method for preparing substrate using germanium condensation process and method for manufacturing semiconductor device using same | |
US9966453B2 (en) | Method for doping source and drain regions of a transistor by means of selective amorphisation | |
JP6169182B2 (ja) | ゲルマニウム層を熱処理する半導体基板の製造方法および半導体装置の製造方法 | |
WO2009066135A1 (en) | Precise oxide dissolution | |
JP2008159960A (ja) | 半導体装置の製造方法 | |
WO2014050187A1 (ja) | ゲルマニウム層の表面の平坦化方法並びに半導体構造およびその製造方法 | |
TWI650820B (zh) | 以鍺層作爲通道區域的半導體裝置及其製造方法 | |
JP2002343800A (ja) | シリコン半導体装置及びその製造方法 | |
US10103232B2 (en) | Semiconductor device and method for manufacturing semiconductor device | |
US7560318B2 (en) | Process for forming an electronic device including semiconductor layers having different stresses | |
Chang et al. | The Higher Mobility Fabrication and Study for SiGe Nanowire | |
JP2008159672A (ja) | 歪み半導体基板の製造方法および歪みmosfetの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161115 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170111 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170620 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170627 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6169182 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |