JP6168265B1 - 光デバイス - Google Patents
光デバイス Download PDFInfo
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- JP6168265B1 JP6168265B1 JP2017519724A JP2017519724A JP6168265B1 JP 6168265 B1 JP6168265 B1 JP 6168265B1 JP 2017519724 A JP2017519724 A JP 2017519724A JP 2017519724 A JP2017519724 A JP 2017519724A JP 6168265 B1 JP6168265 B1 JP 6168265B1
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- 230000003287 optical effect Effects 0.000 title claims abstract description 84
- 230000008033 biological extinction Effects 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 230000031700 light absorption Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 238000004891 communication Methods 0.000 description 9
- 238000005253 cladding Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2227—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties special thin layer sequence
- H01S5/2228—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties special thin layer sequence quantum wells
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
- H04B10/505—Laser transmitters using external modulation
- H04B10/5051—Laser transmitters using external modulation using a series, i.e. cascade, combination of modulators
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
図1は、本発明の実施の形態1に係る光デバイスを示す斜視図である。この光デバイスは、半導体レーザ1と電界吸収型光変調器2が単一のn型InP基板3に形成された電界吸収型光変調器集積レーザである。裏面のn電極4と表面の電極5に電圧が印加されることにより半導体レーザ1はレーザ光を出射する。n電極4とp電極6に変調電圧が印加されることにより電界吸収型光変調器2はレーザ光を変調する。
図8は、本発明の実施の形態2に係る光デバイスを示すブロック図である。1つの半導体レーザ1に対して3つの電界吸収領域2a,2b,2cが並列に接続されている。電界吸収領域2a,2b,2cはそれぞれレーザ光を変調し、電界吸収領域2a,2b,2cの出力が合成される。1つの共通端子11を介して3つの電界吸収領域2a,2b,2cに変調電圧が印加される。
図10は、本発明の実施の形態3に係る光デバイスを示すブロック図である。本実施の形態では、直列に接続された3つの電界吸収領域2a,2b,2cにそれぞれ給電端子11a,11b,11cを設け、別々に給電する。この場合、1つの電界吸収領域に対して1つのドライバが必要になる。各電界吸収領域が個々にドライバにより駆動されることで個別に駆動条件を調整することができる。また、個々の変調方式として、現行のイーサネット(登録商標)技術であるNRZ方式を用いることができる。
図13は、本発明の実施の形態4に係る3つの電界吸収領域を示す断面図である。本実施の形態では、通常の電界吸収型光変調器集積レーザの製造方法により光吸収層8を成長した後に、p型InPクラッド層9の代わりにi−InPクラッド層17を成長する。そして、フォトマスクとフォトレジストを使用したエッチングを2回行うことで、i−InPクラッド層17の厚みを変化させる。i−InPクラッド層17の厚みの異なる部分が3つの電界吸収領域2a,2b,2cに対応する。
Claims (8)
- レーザ光を出射する半導体レーザと、
前記レーザ光を変調する電界吸収型光変調器とを備え、
前記電界吸収型光変調器は、消光特性の異なる複数の電界吸収領域を有し、
前記電界吸収型光変調器の消光比曲線は複数の段差を有することを特徴とする光デバイス。 - 前記複数の電界吸収領域は直列に接続されて前記レーザ光を順に変調することを特徴とする請求項1に記載の光デバイス。
- 前記複数の電界吸収領域は並列に接続されてそれぞれ前記レーザ光を変調し、前記複数の電界吸収領域の出力が合成されることを特徴とする請求項1に記載の光デバイス。
- 前記複数の電界吸収領域は個々に駆動されることを特徴とする請求項1〜3の何れか1項に記載の光デバイス。
- 前記複数の電界吸収領域の光吸収層は多重量子井戸のパラメータが異なることを特徴とする請求項1〜4の何れか1項に記載の光デバイス。
- 前記複数の電界吸収領域の各々は、光吸収層と、前記光吸収層の上に形成されたアンドープ層を有し、
前記複数の電界吸収領域の前記アンドープ層は厚みが異なることを特徴とする請求項1〜4の何れか1項に記載の光デバイス。 - 前記複数の電界吸収領域の数は3であり、
前記電界吸収型光変調器は4値パルス振幅変調方式により駆動されることを特徴とする請求項1〜6の何れか1項に記載の光デバイス。 - 前記半導体レーザと前記電界吸収型光変調器が単一の半導体基板に形成された電界吸収型光変調器集積レーザであることを特徴とする請求項1〜7の何れか1項に記載の光デバイス。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/085399 WO2018100634A1 (ja) | 2016-11-29 | 2016-11-29 | 光デバイス |
Publications (2)
Publication Number | Publication Date |
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JP6168265B1 true JP6168265B1 (ja) | 2017-07-26 |
JPWO2018100634A1 JPWO2018100634A1 (ja) | 2018-12-06 |
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JP2017519724A Active JP6168265B1 (ja) | 2016-11-29 | 2016-11-29 | 光デバイス |
Country Status (4)
Country | Link |
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US (1) | US10855052B2 (ja) |
JP (1) | JP6168265B1 (ja) |
CN (1) | CN109983639B (ja) |
WO (1) | WO2018100634A1 (ja) |
Families Citing this family (1)
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US11838055B2 (en) * | 2021-01-22 | 2023-12-05 | Nokia Solutions And Networks Oy | Apparatus comprising serially connected electro-absorption modulators |
Citations (5)
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JPH06120616A (ja) * | 1991-06-07 | 1994-04-28 | Fujitsu Ltd | 半導体発光装置 |
JPH1056229A (ja) * | 1996-08-08 | 1998-02-24 | Fujitsu Ltd | 半導体光集積素子の製造方法 |
JP2001221985A (ja) * | 2000-02-09 | 2001-08-17 | Opnext Japan Inc | 半導体電界吸収光変調器集積型発光素子、発光素子モジュール、及び光伝送システム |
JP2005142230A (ja) * | 2003-11-04 | 2005-06-02 | Sumitomo Electric Ind Ltd | 変調器集積半導体レーザ、光変調システムおよび光変調方法 |
JP2015068918A (ja) * | 2013-09-27 | 2015-04-13 | 三菱電機株式会社 | 半導体光素子、光モジュールおよび半導体光素子の製造方法 |
Family Cites Families (16)
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JP2746065B2 (ja) * | 1993-07-29 | 1998-04-28 | 日本電気株式会社 | 光半導体素子の製造方法 |
EP0641049B1 (en) * | 1993-08-31 | 1998-10-28 | Fujitsu Limited | An optical semiconductor device and a method of manufacturing the same |
JP3755090B2 (ja) * | 1995-06-14 | 2006-03-15 | 三菱電機株式会社 | 半導体装置の製造方法,及び半導体装置 |
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JP5113456B2 (ja) | 2007-08-28 | 2013-01-09 | 株式会社アドバンテスト | 光変調装置および試験装置 |
JP5790481B2 (ja) * | 2011-12-22 | 2015-10-07 | 三菱電機株式会社 | 接続装置 |
JP2014085501A (ja) * | 2012-10-23 | 2014-05-12 | Mitsubishi Electric Corp | 半導体光変調器 |
JP2016092124A (ja) | 2014-10-31 | 2016-05-23 | 三菱電機株式会社 | 光変調器集積半導体レーザ |
JP6523060B2 (ja) * | 2015-06-09 | 2019-05-29 | 日本オクラロ株式会社 | 光信号生成装置 |
-
2016
- 2016-11-29 JP JP2017519724A patent/JP6168265B1/ja active Active
- 2016-11-29 CN CN201680091128.0A patent/CN109983639B/zh active Active
- 2016-11-29 WO PCT/JP2016/085399 patent/WO2018100634A1/ja active Application Filing
- 2016-11-29 US US16/346,911 patent/US10855052B2/en active Active
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JPH06120616A (ja) * | 1991-06-07 | 1994-04-28 | Fujitsu Ltd | 半導体発光装置 |
JPH1056229A (ja) * | 1996-08-08 | 1998-02-24 | Fujitsu Ltd | 半導体光集積素子の製造方法 |
JP2001221985A (ja) * | 2000-02-09 | 2001-08-17 | Opnext Japan Inc | 半導体電界吸収光変調器集積型発光素子、発光素子モジュール、及び光伝送システム |
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Also Published As
Publication number | Publication date |
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WO2018100634A1 (ja) | 2018-06-07 |
CN109983639A (zh) | 2019-07-05 |
CN109983639B (zh) | 2022-03-22 |
US10855052B2 (en) | 2020-12-01 |
JPWO2018100634A1 (ja) | 2018-12-06 |
US20200059065A1 (en) | 2020-02-20 |
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